JP5481828B2 - Adhesive composition, film adhesive, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to an adhesive composition, a film adhesive, an adhesive sheet, a semiconductor wafer with an adhesive layer, a semiconductor device, and a method for manufacturing the semiconductor device.

  Conventionally, a silver paste has been mainly used for joining a semiconductor element and a semiconductor element mounting support member. However, with the recent increase in the size of semiconductor elements and the reduction in size and performance of semiconductor packages, the support members used are also required to be reduced in size and density.

  In response to these demands, silver paste has wet spreading properties, problems during wire bonding caused by protrusion and inclination of semiconductor elements, difficulty in controlling the thickness of the silver paste layer, and voids in the silver paste layer. It is becoming impossible to meet the above requirements.

  Therefore, in order to cope with the above requirements, in recent years, a film-like adhesive (hereinafter sometimes referred to as a die bonding film) has been used (for example, see Patent Documents 1 and 2). This die bonding film is used in an individual piece sticking method or a wafer back face sticking method.

  When manufacturing a semiconductor device by a piece bonding method using a die bonding film, first, a reel-like die bonding film is cut into pieces by cutting or punching, and then bonded to a support member. The support member with the die bonding film thus obtained is joined to the semiconductor element separated by the dicing process to produce the support member with the semiconductor element. Thereafter, a semiconductor device is obtained through a wire bonding process, a sealing process, and the like (see, for example, Patent Document 3).

  However, in order to use the die bonding film in the piece bonding method, a dedicated assembly device for cutting out the die bonding film and adhering it to the support member is necessary, so it is manufactured compared to the method using silver paste There was a problem of high costs.

  On the other hand, when manufacturing a semiconductor device using a wafer bonding method using a die bonding film, first, one surface of the die bonding film is bonded to the back surface of the semiconductor wafer, and a dicing sheet is bonded to the other surface of the die bonding film. . Thereafter, the wafer and the die bonding film are separated into pieces by dicing. The semiconductor device with a die bonding film obtained in this way is picked up, joined to a support member, and then subjected to subsequent steps such as wire bonding and sealing to obtain a semiconductor device.

  In this wafer back surface pasting method using a die bonding film, a semiconductor element with a die bonding film is bonded to a support member, so that an apparatus for separating the die bonding film is not required, and a conventional assembly apparatus for silver paste is used. It can be used as it is or by modifying a part of the apparatus such as adding a hot platen. Therefore, it has been attracting attention as a method in which the manufacturing cost can be kept relatively low among assembly methods using a die bonding film (see, for example, Patent Document 4).

Japanese Patent Laid-Open No. 03-192178 Japanese Patent Laid-Open No. 04-234472 JP 09-017810 A Japanese Patent Laid-Open No. 04-196246

  Recently, in addition to downsizing, thinning, and high performance of semiconductor elements, multi-functionalization has progressed, and accordingly, semiconductor devices in which a plurality of semiconductor elements are stacked are rapidly increasing. Also in such a semiconductor device, since it is required to reduce the thickness of the device, the semiconductor wafer is further reduced in thickness.

  With the ultra-thinning of semiconductor wafers, wafer warpage when a die bonding film is attached to the back surface of the wafer has become apparent. In order to prevent this, there is an increasing demand for a die bonding film that can be attached to the back surface of the wafer at a temperature lower than 150 ° C.

  On the other hand, from the viewpoint of ensuring the reliability of the semiconductor device, the die bonding film is also required to have heat resistance, moisture resistance, reflow resistance, etc. With regard to reflow resistance, a reflow heating temperature of around 260 ° C. Therefore, it is required to have high adhesive strength capable of suppressing peeling or breaking of the die bond layer (adhesive layer).

  The present invention has been made in view of the above circumstances, and is used for bonding semiconductor elements, and has excellent film-forming properties that enable the realization of a film-like adhesive having both low temperature sticking property and reflow resistance. It is an object of the present invention to provide an agent composition, and a film adhesive, an adhesive sheet, a semiconductor wafer with an adhesive layer, a semiconductor device, and a method for manufacturing the semiconductor device using the same.

In order to achieve the above object, the present invention provides an adhesive composition used for forming a film adhesive for adhering a semiconductor element to an adherend, comprising (A) one or more maleimide compounds and A thermoplastic polymer obtained by copolymerizing one or more monofunctional vinyl compounds and (B) a thermosetting resin , wherein the maleimide compound contains maleimide having a phenolic hydroxyl group, and cresol is used as the thermosetting resin. An adhesive composition comprising a glycidyl ether of a novolak resin is provided.

  According to the adhesive composition of the present invention, by having the above-described configuration, it is possible to have a good film-forming property, and it is possible to form a film adhesive having both low temperature sticking property and reflow resistance. Become. And the reliability of the semiconductor device manufactured can be improved by adhere | attaching a semiconductor element using this film adhesive. In addition, said effect based on this invention combines the said (A) component and said (B) component, and is the film form which balances the favorable thermal fluidity in B stage, and the thermal fluid suppression in C stage. The present inventors consider that the adhesive was formed.

  In the adhesive composition of the present invention, the thermoplastic polymer is carboxylated in the molecule in terms of ensuring adhesion (wetability) to the adherend and ensuring a crosslinking point capable of reacting with the thermosetting resin to be blended. It preferably has a group and / or a phenolic hydroxyl group.

  Moreover, it is preferable that the said maleimide compound contains the maleimide compound which has a carboxyl group and / or a phenolic hydroxyl group in a molecule | numerator. In this case, a carboxyl group and / or a phenolic hydroxyl group are introduced into the molecule of the thermoplastic polymer, and an effect of high adhesion and heat resistance derived from the imide group can be obtained.

  The adhesive composition of the present invention preferably contains an epoxy resin as a thermosetting resin having good reactivity with the above carboxyl group or phenolic hydroxyl group.

  In the adhesive composition of the present invention, the glass transition temperature of the thermoplastic polymer is preferably 150 ° C. or lower from the viewpoint of further improving the low temperature sticking property.

  The present invention also provides a film adhesive obtained by forming the adhesive composition of the present invention into a film. According to the film-like adhesive of the present invention, by being composed of the adhesive composition of the present invention, it can have both low temperature sticking property and reflow resistance, and is manufactured by bonding semiconductor elements. The reliability of the semiconductor device can be improved.

  The present invention also provides an adhesive sheet comprising a base material and an adhesive layer made of the adhesive composition of the present invention provided on one surface of the base material.

  In the adhesive sheet of the present invention, since the adhesive layer can have both low temperature sticking property and reflow resistance, the reliability of a semiconductor device manufactured by bonding of semiconductor elements can be improved.

  The present invention also provides an adhesive sheet having a laminated structure obtained by laminating the film adhesive of the present invention and a dicing sheet. Such an adhesive sheet can improve the reliability of a semiconductor device manufactured by bonding semiconductor elements, since the film adhesive can have both low temperature sticking property and reflow resistance, The efficiency of the device assembly process can be improved. The above adhesive sheet is particularly suitable for the manufacture of a semiconductor device by a wafer back surface pasting method.

  Moreover, it is preferable that the said dicing sheet has a base film and an adhesive layer provided on the base film.

  The present invention also provides a semiconductor wafer with an adhesive layer comprising a semiconductor wafer and an adhesive layer made of the adhesive composition of the present invention provided on one surface of the semiconductor wafer.

  The present invention also provides a semiconductor device in which a semiconductor element and an adherend are bonded by the adhesive composition of the present invention.

  The present invention also provides a method for manufacturing a semiconductor device, which includes a step of bonding a semiconductor element and an adherend using the film adhesive of the present invention. According to the method for manufacturing a semiconductor device of the present invention, the excellent low-temperature adhesiveness of the film-like adhesive of the present invention can sufficiently reduce the influence of thermal damage to the semiconductor element and warpage due to thermal stress, and the present invention. Due to the excellent reflow resistance of the film adhesive of the invention, the peeling or breaking of the die bond layer (adhesive layer) can be sufficiently suppressed, and a semiconductor device having excellent reliability can be obtained.

  The present invention also provides a process for preparing an adhesive sheet having a laminated structure formed by laminating the film adhesive of the present invention and a dicing sheet, and attaching the film adhesive of the adhesive sheet to a semiconductor wafer; A step of obtaining a plurality of individual semiconductor elements with a film adhesive by cutting the semiconductor wafer to which the adhesive has been applied, and bonding the semiconductor element with a film adhesive to a semiconductor element mounting support member A method for manufacturing a semiconductor device comprising the steps is provided. According to such a method for manufacturing a semiconductor device, due to the excellent low-temperature adhesiveness of the film adhesive of the present invention, the temperature for application to the dicing sheet is higher than the softening point of the dicing sheet when integrated with the dicing sheet. The temperature can be lowered, the effect of warpage due to thermal damage and thermal stress on the semiconductor wafer can be sufficiently reduced at the time of application to the semiconductor wafer, and the excellent adhesive of the film adhesive of the present invention Due to the reflow resistance, peeling or destruction of the die bond layer (adhesive layer) can be sufficiently suppressed, and a highly reliable semiconductor device can be obtained.

  The dicing sheet preferably has a base film and a pressure-sensitive adhesive layer provided on the base film.

  ADVANTAGE OF THE INVENTION According to this invention, it is used for adhesion | attachment of a semiconductor element, The adhesive composition excellent in the film forming property which enables realization of the film adhesive which has low-temperature sticking property and reflow resistance, and uses this The present invention can provide a film-like adhesive, an adhesive sheet, a semiconductor wafer with an adhesive layer, a semiconductor device, and a method for manufacturing the semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. In addition, “(meth) acrylate” in the present specification means “acrylate” and “methacrylate” corresponding thereto. Similarly, “(meth) acryl” means “acryl” and “methacryl” corresponding thereto, and “(meth) acryloyl” means “acryloyl” and corresponding “methacryloyl”.

  The adhesive composition of the present invention is an adhesive composition used for adhering a semiconductor element to an adherend, and comprises (A) one or more maleimide compounds and one or more monofunctional vinyl compounds. A thermoplastic polymer obtained by polymerization and (B) a thermosetting resin are contained.

  (A) As a maleimide compound for obtaining a thermoplastic polymer, for example, N-containing a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group represented by N-methylmaleimide and N-ethylmaleimide. Contains a linear or branched alkoxy group having 1 to 7 carbon atoms represented by alkylmaleimide, N-carboxyamidomaleimide, N- (2-cyanoethyl) maleimide, N-methoxycarbonylmaleimide and N-ethoxycarbonylmaleimide N-alkoxycarbonylmaleimide, N- (2-carboxyethyl) maleimide, N- (3-carboxypropyl) maleimide, N- (4-carboxybutyl) maleimide, N- (5-carboxypentyl) maleimide, N- ( 6-carboxyhexyl) maleimide, N-fu Furylmaleimide, N-cyclohexylmaleimide, N-cyclopentylmaleimide, 2-methyl-N-phenylmaleimide, N-benzylmaleimide, N- (1-phenylethyl) maleimide, N- (1-naphthyl) -maleimide, N-methoxy Polyethylene glycol maleimide, 2-fluorenylmaleimide, N- (9-acridinyl) maleimide, 4- (N-maleimido) benzophenone, 4- (N-maleimido) azobenzene, N- [4- (2-benzimidazolyl) phenyl ] Maleimide, N- (1-pyrenylmaleimide), 3-maleimidobenzoic acid, N-hydroxysuccinimide ester, 6-maleimidohexanoic acid, N-hydroxysuccinimide ester, compound represented by the following general formula (I) Is mentioned.

ここで、Ｒ_１及びＲ_２は、ベンゼン環上の置換基を示し、それぞれ独立に、水素、炭素数１〜７の直鎖状アルキル基、炭素数１〜７の分岐したアルキル基、炭素数１〜７のアルコキシ基、フェニル基、水酸基、カルボキシル基、フッ素、シアノ基、イソシアネート基、ニトロ基、メルカプト基、炭素数１〜５のアルキルチオ基、トリフルオロメチル基、炭素数１〜７のエステル基、フェノキシ基、炭素数１〜７のアルキルカルボニル基を示す。被着体との接着性（ぬれ性）確保、及び配合する熱硬化性樹脂と反応し得る架橋点確保の点で、上記一般式（Ｉ）におけるＲ_１又はＲ_２が、カルボキシル基又は水酸基であるマレイミド化合物を用いることが好ましい。

Here, R < ₁ > and R < ₂ > show the substituent on a benzene ring, respectively, hydrogen, a C1-C7 linear alkyl group, a C1-C7 branched alkyl group, carbon number 1-7 alkoxy group, phenyl group, hydroxyl group, carboxyl group, fluorine, cyano group, isocyanate group, nitro group, mercapto group, alkylthio group having 1 to 5 carbon atoms, trifluoromethyl group, ester having 1 to 7 carbon atoms Group, a phenoxy group, and an alkylcarbonyl group having 1 to 7 carbon atoms. R ₁ or R ₂ in the above general formula (I) is a carboxyl group or a hydroxyl group in terms of ensuring adhesion (wetability) with the adherend and ensuring a crosslinking point capable of reacting with the thermosetting resin to be blended. It is preferable to use a certain maleimide compound.

  Said maleimide compound can be used individually by 1 type or in combination of 2 or more types.

  As the monofunctional vinyl compound to be copolymerized with the maleimide compound, a known compound can be used without particular limitation as long as it has one carbon-carbon double bond in the molecule and can be copolymerized with maleimide. , Styrene and its derivatives, allyl derivatives, (meth) acrylic acid having a acryloyl group or methacryloyl group in its molecule and its derivatives, and the like are preferably used as a compound copolymerizable with maleimide by thermal radical polymerization or thermal anion polymerization.

  Examples of the monofunctional vinyl compound include straight-chain compounds having 1 to 18 carbon atoms represented by methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate. (Meth) acrylic acid ester having a chain alkyl group, (meth) acrylic acid ester having a cyclic alkyl group having 1 to 18 carbon atoms, EO-modified or PO-modified (meth) acrylic acid ester, (meth) acrylic acid , Unsaturated carboxylic acid derivatives such as itaconic acid, maleic acid and fumaric acid and unsaturated carboxylic acid ester derivatives thereof, unsaturated nitrile derivatives such as acrylonitrile and methacrylonitrile, acrylamide, methacrylamide, N-methylolacrylamide, N- Unsaturated amide derivatives such as methylol methacrylamide, vinyl acetate, Vinyl ester derivatives such as vinyl lopionate, vinyl ether derivatives such as methyl vinyl ether and ethyl vinyl ether, styrene, p-hydroxystyrene, α-methylstyrene, 4-acetoxystyrene, 4-t-butylstyrene, 4-methoxystyrene, 4- Styrene derivatives such as t-butoxystyrene and 4-vinylbenzoic acid, nitrogen-containing vinyl derivatives such as N-vinylformamide, N-vinylpyrrolidone, 1-vinylimidazole, and vinylcarbazole can be used.

  The said monofunctional vinyl compound can be used individually by 1 type or in combination of 2 or more types.

  Moreover, the monofunctional vinyl compound which has a carboxyl group and / or a phenolic hydroxyl group in a molecule | numerator from the point of ensuring the adhesiveness (wetting property) with a to-be-adhered body, and the crosslinking point which can react with the thermosetting resin to mix | blend. Is preferably used.

  (A) The thermoplastic polymer can be synthesized by copolymerizing the maleimide compound and the monofunctional vinyl compound by a known method such as thermal radical polymerization or thermal anion polymerization. In the present invention, radical polymerization is preferred because the polymerization method is simple, the molecular weight control is easy, and the functional group is less restricted.

  As a method for synthesizing the thermoplastic polymer (A) by radical polymerization, for example, a maleimide compound and a monofunctional vinyl compound are dissolved in an organic solvent, and the peroxide is typified by benzoyl peroxide in an inert atmosphere such as nitrogen. Or an azo compound typified by azobisisobutyronitrile (AIBN) and stirring with heating.

  (A) It is preferable that the weight average molecular weight of a thermoplastic polymer is controlled within the range of 5000-800000, and 10000-100000 are more preferable. When the weight average molecular weight is in this range, the strength, flexibility, and tackiness of a sheet or film are appropriate, the handling property is good, and appropriate thermal fluidity can be secured. In addition, when the said weight average molecular weight is less than 5000, there exists a tendency for film forming property to worsen, and when it exceeds 800000, there exists a tendency for fluidity | liquidity to fall and for adhesive force to fall.

  Said weight average molecular weight is a weight average molecular weight when measured by polystyrene conversion using Shimadzu Corporation high performance liquid chromatography “C-R4A” (trade name).

  The application temperature to the film adhesive formed from the adhesive composition of the present invention is preferably 20 to 200 ° C., and preferably 20 to 150 ° C. from the viewpoint of suppressing warpage of the semiconductor wafer. More preferably, it is 25-100 degreeC. In order to enable attachment at the above temperature, the Tg of the film adhesive is preferably set to 150 ° C. or lower. Therefore, the glass transition temperature (Tg) of the thermoplastic polymer (A) used in the adhesive composition of the present invention is preferably 150 ° C. or lower, and more preferably −20 to 100 ° C. (A) If the Tg of the thermoplastic polymer exceeds 150 ° C, there is a high possibility that the bonding temperature to the wafer back surface will exceed 200 ° C, and warpage after bonding to the wafer back surface tends to occur. When Tg is less than −20 ° C., the tackiness of the surface of the film-like adhesive becomes too strong, and the handleability tends to deteriorate.

  The above Tg is (A) the main dispersion peak temperature when a thermoplastic polymer is formed into a film. The temperature rise rate is 5 ° C. using a viscoelasticity analyzer “RSA-2” (trade name) manufactured by Rheometrics. / Min, frequency 1 Hz, measurement temperature −150 to 300 ° C., tan δ peak temperature in the vicinity of Tg is measured, and this is defined as the main dispersion temperature.

  (A) By setting the Tg and weight average molecular weight of the thermoplastic polymer within the above ranges, the temperature for attaching to the backside of the wafer can be kept low, and the semiconductor element is adhered and fixed to the semiconductor element mounting support member. The heating temperature (die bonding temperature) at the time can also be lowered, and an increase in warpage of the semiconductor element can be suppressed. Moreover, the fluidity | liquidity at the time of die bonding which is the characteristics of this invention can be provided effectively.

  (A) The compounding ratio of the maleimide compound and the monofunctional vinyl compound when synthesizing the thermoplastic polymer may be 10 to 900 parts by mass with respect to 100 parts by mass of the maleimide compound. preferable.

  The ratio of the maleimide compound having a carboxyl group and / or a phenolic hydroxyl group in the molecule in the maleimide compound used for copolymerization is preferably 5 to 100% by mass, and more preferably 10 to 80% by mass. The proportion of the monofunctional vinyl compound having a carboxyl group and / or a phenolic hydroxyl group in the molecule in the monofunctional vinyl compound used for copolymerization is preferably 5 to 100% by mass, and more preferably 10 to 80% by mass.

  The adhesive composition of the present invention contains (B) a thermosetting resin. In the present invention, the thermosetting resin refers to a reactive compound capable of causing a crosslinking reaction by heat. Examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acrylic resins, unsaturated polyester resins, diallyl phthalate resins, silicone resins, resorcinol formaldehyde resins, Xylene resin, furan resin, polyurethane resin, ketone resin, triallyl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, thermosetting resin synthesized from cyclopentadiene, aromatic In addition to thermosetting resins by trimerization of dicyanamide, polyfunctional acrylates and / or methacrylate compounds may be used.

  Among these, an epoxy resin, a cyanate resin, and a bismaleimide resin are preferable in that an excellent adhesive force can be given at a high temperature, and an epoxy resin is particularly preferable in terms of workability and productivity. These thermosetting resins can be used singly or in combination of two or more.

  (B) When an epoxy resin is used as the thermosetting resin, those containing at least two epoxy groups in the molecule are preferable, and phenol glycidyl ether type epoxy resins are more preferable from the viewpoint of curability and cured product characteristics. .

  As such an epoxy resin, for example, glycidyl ether of bisphenol A type (or AD type, S type, F type), glycidyl ether of water-added bisphenol A type, ethylene oxide adduct bisphenol A type glycidyl ether, propylene oxide addition Bisphenol A type glycidyl ether, phenol novolac resin glycidyl ether, cresol novolac resin glycidyl ether, bisphenol A novolak resin glycidyl ether, naphthalene resin glycidyl ether, trifunctional (or tetrafunctional) glycidyl ether, di Glycidyl ether of cyclopentadiene phenol resin, glycidyl ester of dimer acid, trifunctional (or tetrafunctional) glycidyl amine, glycidyl amino of naphthalene resin Etc. The. These can be used alone or in combination of two or more.

  In addition, it is preferable to use a high-purity product in which the above-mentioned epoxy resin is reduced to 300 ppm or less of impurity ions such as alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine. This is preferable for prevention of corrosion and corrosion of metal conductor circuits.

  It is preferable to mix | blend the said epoxy resin in the ratio of 0.1-200 mass parts with respect to 100 mass parts of (A) thermoplastic polymers, and it is more preferable to mix | blend in the ratio of 2-50 mass parts. When the compounding amount of the epoxy resin exceeds 200 parts by mass, outgassing during heating increases and film formability (toughness) tends to be impaired. On the other hand, if it is less than 2 parts by mass, the high-temperature adhesiveness tends to be low.

  When using an epoxy resin, a curing agent may be used as necessary. Examples of such curing agents include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, Examples include organic acid dihydrazide, boron trifluoride amine complex, imidazoles, and tertiary amines. Among them, phenolic compounds are preferable, and phenolic compounds having at least two phenolic hydroxyl groups in the molecule are more preferable.

  Specific examples of the above compounds include phenol novolak, cresol novolak, t-butylphenol novolak, dicyclopentagencresol novolak, dicyclopentagen phenol novolak, xylylene-modified phenol novolak, naphthol compound, trisphenol compound, tetrakisphenol Examples thereof include novolak, bisphenol A type novolak, poly-p-vinylphenol, and phenol aralkyl resin.

  Among these, those having a number average molecular weight in the range of 400 to 30,000 are preferable. Thereby, at the time of assembling the semiconductor device, it is possible to suppress outgassing during heating that causes contamination of the semiconductor element or the device.

  The amount of the curing agent used is determined by the ratio between the total amount of epoxy groups (epoxy equivalent) in the epoxy resin and the total amount of functional groups reactive with this (for example, the hydroxyl group equivalent of phenolic compounds). It is more preferable that the ratio is 0.2 / 1.0 to 1.8 / 1.0 in terms of the total amount of groups / total amount of epoxy groups (equivalent ratio). When this ratio is less than 0.2 / 1.0 and more than 1.8 / 1.0, a large amount of unreacted epoxy groups and functional groups remain in the cured product. There is a tendency to reduce mechanical properties.

  Moreover, a hardening accelerator can also be used as needed. The curing accelerator is not particularly limited as long as it cures a thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4 -Methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate and the like. When an acrylate and / or methacrylate compound is used as the thermosetting resin, a peroxide can be used as necessary.

  Furthermore, a filler can also be mix | blended with the adhesive composition of this invention. The filler can be used without any limitation regardless of the type and shape, for example, metal filler such as silver powder, gold powder, copper powder, nickel powder, alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, carbonic acid Magnesium, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, crystalline silica, amorphous silica, boron nitride, titania, glass, iron oxide, ceramic and other inorganic fillers, carbon, rubber And organic fillers such as system fillers.

  The filler can be used properly according to the desired function. For example, the metal filler is added for the purpose of imparting conductivity, thermal conductivity, thixotropy, etc. to the adhesive composition, and the nonmetallic inorganic filler is thermally conductive, low thermal expansion, low hygroscopicity to the adhesive layer. The organic filler is added for the purpose of imparting toughness to the adhesive layer.

  Said metal filler, inorganic filler, or organic filler can be used individually or in combination of 2 or more types.

  Among the above fillers, a metal filler, an inorganic filler, or an insulating filler is preferable in terms of being able to impart conductivity, thermal conductivity, low moisture absorption characteristics, insulation, and the like required for an adhesive material for a semiconductor device, and an inorganic filler. Or in an insulating filler, a silica filler is more preferable at the point which the dispersibility with respect to a resin varnish is favorable and can provide the high adhesive force at the time of a heat | fever.

  The average particle size of the filler is preferably 10 μm or less, the maximum particle size is 25 μm or less, the average particle size is 5 μm or less, and the maximum particle size is more preferably 10 μm or less. If the average particle diameter exceeds 10 μm and the maximum particle diameter exceeds 25 μm, the film-forming property is impaired, and the surface smoothness at the time of thinning tends to be impaired. Although there is no restriction | limiting in particular in a lower limit, Usually, both are 0.001 micrometer. In addition, as a measuring method of the average particle diameter and maximum particle diameter of the said filler, the method etc. which measure the particle size of about 200 fillers using a scanning electron microscope (SEM), etc. are mentioned, for example.

  Although the usage-amount of the said filler is decided according to the characteristic or function to provide, it is 1-50 mass% with respect to the sum total of a resin component and a filler, Preferably it is 2-40 mass%, More preferably, it is 5-30 mass%. It is. By increasing the amount of filler, a high elastic modulus can be achieved, and dicing performance (cutability by a dicer blade), wire bonding performance (ultrasonic efficiency), and adhesive strength during heating can be effectively improved.

  If the amount of the filler is increased more than necessary, the thermocompression bonding property tends to be impaired. Therefore, the amount of the filler used is preferably within the above range. The optimal filler content is determined to balance the required properties. Mixing and kneading of the adhesive composition in the case of using a filler can be carried out by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.

  Various coupling agents can be added to the adhesive composition of the present invention in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane, titanium, and aluminum. Among these, a silane coupling agent is preferable because it is highly effective.

  It is preferable that the usage-amount of the said coupling agent shall be 0.01-20 mass parts with respect to 100 mass parts of thermoplastic polymers in an adhesive composition from the surface of the effect, heat resistance, and cost.

  In the adhesive composition of the present invention, an ion scavenger can be further added in order to adsorb ionic impurities and improve insulation reliability at the time of moisture absorption. Such an ion scavenger is not particularly limited, for example, triazine thiol compound, a compound known as a copper damage inhibitor to prevent copper from being ionized and dissolved, such as a bisphenol-based reducing agent, zirconium-based, Examples include inorganic ion adsorbents such as antimony bismuth-based magnesium aluminum compounds.

  The amount of the ion scavenger used is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic polymer in the adhesive composition from the viewpoint of the effect of addition, heat resistance, cost, and the like.

  The adhesive composition of the present invention appropriately includes a softening agent, an anti-aging agent, a colorant, a flame retardant, a tackifier such as a terpene resin, and a thermoplastic polymer component other than the (A) thermoplastic polymer. It may be added. Thermoplastic polymer components used to improve adhesion and provide stress relaxation during curing include polyester resin, polyamide resin, polyimide resin, xylene resin, phenoxy resin, polyurethane resin, urea resin, acrylic rubber, etc. Can be mentioned. These polymer components preferably have a molecular weight of 5,000 to 500,000.

  FIG. 1 is a schematic cross-sectional view showing an embodiment of a film adhesive according to the present invention. A film adhesive (adhesive film) 1 shown in FIG. 1 is obtained by forming the adhesive composition into a film. FIG. 2 is a schematic cross-sectional view showing an embodiment of an adhesive sheet according to the present invention. The adhesive sheet 100 shown in FIG. 2 is comprised from the base material 2 and the adhesive bond layer which consists of the film adhesive 1 provided on both surfaces of this. FIG. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet according to the present invention. The adhesive sheet 110 shown in FIG. 3 is comprised from the base material 2, the adhesive bond layer which consists of the film adhesive 1 provided on the one surface, and the cover film 3. As shown in FIG.

  The film adhesive 1 is prepared by mixing the above-mentioned (A) thermoplastic polymer and (B) thermosetting resin and other components added as necessary in an organic solvent, kneading the mixed solution, and varnishing The varnish layer is formed on the substrate 2, and the varnish layer is dried by heating, and then the substrate 2 is removed. At this time, without removing the base material 2, the base material 2 and an adhesive layer made of the adhesive film 1 provided on one surface of the base material 2 can be stored and used in the state of an adhesive sheet. .

  The above mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, and a ball mill. The above-mentioned heat drying is not particularly limited as long as the solvent used is sufficiently volatilized, but is performed by heating at 50 to 200 ° C. for 0.1 to 90 minutes, for example.

  The organic solvent used for preparing the varnish, that is, the varnish solvent is not particularly limited as long as the material can be uniformly dissolved or dispersed. Examples include dimethylformamide, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, dioxane, cyclohexanone, ethyl acetate, and N-methyl-pyrrolidinone.

  The thickness of the film adhesive and the adhesive layer is preferably 1 to 100 μm.

  The substrate 2 is not particularly limited as long as it can withstand the above drying conditions. For example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, or a methylpentene film can be used as the substrate 2. The film as the substrate 2 may be a multilayer film in which two or more kinds are combined, or the surface may be treated with a release agent such as silicone or silica.

  The cover film 3 is used to prevent damage / contamination of the adhesive layer. For example, a polyethylene film, a polypropylene film, a surface release agent-treated film, or the like can be used.

  The film-like adhesive 1 and the adhesive sheets 100 and 110 are preferably transported in the form of a tape having a width of about 1 to 20 mm or a sheet having a width of about 10 to 50 cm and wound around a winding core.

  Moreover, the film adhesive 1 of this invention and a dicing sheet can be laminated | stacked, and it can also be set as an adhesive sheet. Examples of the dicing sheet include a dicing sheet having a structure in which an adhesive layer is laminated on a base film, or a dicing sheet consisting only of a base film. In this embodiment, it is preferable that the film adhesive 1 is formed in advance in a shape close to a wafer (pre-cut).

  Specifically, as shown in FIG. 4, the adhesive sheet 120 in which the base film 7, the pressure-sensitive adhesive layer 6, and the film adhesive 1 of the present invention are formed in this order, as shown in FIG. As shown, an adhesive sheet 130 formed from the base film 7 and the film adhesive 1 of the present invention is exemplified.

  For the purpose of simplifying the semiconductor device manufacturing process, these adhesive sheets include at least a film-like adhesive 1 and a base film 7 that can ensure elongation (commonly referred to as expanded) when a dicing sheet or tensile tension is applied. It is an integrated adhesive sheet, and is an adhesive sheet that has the characteristics required for both a dicing sheet and a die bonding film. That is, the adhesive sheet functions as a dicing sheet during dicing and as a die bonding film during die bonding.

  The adhesive sheet 120 can be obtained, for example, by providing the pressure-sensitive adhesive layer 6 on the base film 7 and further laminating the film adhesive 1 of the present invention on the pressure-sensitive adhesive layer 6. The adhesive sheet 130 can be obtained, for example, by laminating the expandable base film 7 and the film adhesive 1 of the present invention.

  The base film 7 is not particularly limited as long as it is a film that can ensure elongation (common name, expanded) when a tensile tension is applied, but a film made of polyolefin is preferably used.

  The pressure-sensitive adhesive layer 6 may be either a pressure-sensitive type or a radiation-curing type, has a sufficient adhesive strength that prevents the semiconductor element from scattering during dicing, and has a low adhesion level that does not damage the semiconductor element in the subsequent pick-up process of the semiconductor element. As long as it has power, a conventionally known one can be used without particular limitation.

  According to the above-described dicing / die bonding integrated adhesive sheet, the film-like adhesive of the adhesive sheet is laminated on the back surface of the semiconductor wafer while heating, and after dicing, the semiconductor element (divided semiconductor wafer) is picked up. Thereby, a semiconductor element with a film adhesive can be manufactured efficiently. In addition, the dicing / die bonding integrated adhesive sheet has good process characteristics when assembling a semiconductor device, such as pick-up after dicing, that is, easy peeling between the die bonding film and the dicing sheet once bonded. Can be combined.

  Further, when the above-mentioned dicing / die bonding integrated adhesive sheet is produced by laminating the film adhesive of the present invention and the dicing tape, dicing is performed due to the excellent low temperature adhesiveness of the film adhesive of the present invention. The tape can be attached at a temperature lower than the softening temperature (for example, 150 ° C. or lower), thereby suppressing thermal fusion between the dicing sheet and the die bond film, ensuring stable pick-up properties, and warping of the semiconductor wafer. The effect that it can reduce can be acquired.

  As temperature conditions at the time of bonding the film adhesive of this invention and a dicing tape, 10-150 degreeC is preferable and 20-100 degreeC is more preferable.

  In addition, a semiconductor device can be efficiently manufactured by using the dicing / die bonding integrated adhesive sheet. A manufacturing method of such a semiconductor device includes a step of applying a film-like adhesive of the above-mentioned dicing / die-bonding integrated adhesive sheet to a semiconductor wafer, and cutting the semiconductor wafer attached with the film-like adhesive. A step of obtaining a plurality of individual semiconductor elements with a film adhesive and a step of bonding the semiconductor element with a film adhesive to a support member for mounting a semiconductor element.

  The present invention also provides a semiconductor wafer with an adhesive layer comprising a semiconductor wafer and an adhesive layer comprising the adhesive composition of the present invention provided on one surface of the semiconductor wafer. The layered semiconductor wafer can be produced, for example, by laminating the semiconductor wafer while heating the film adhesive of the adhesive sheet of the present invention. In this case, since the film adhesive 1 is a film made of the adhesive composition of the present invention, for example, it can be attached to a semiconductor wafer at a low temperature of about 20 ° C. to 100 ° C., and the wafer warp is sufficiently small. It becomes possible to obtain a semiconductor wafer with an adhesive layer. In this embodiment, it is preferable that the film adhesive 1 is formed in advance in a shape close to a wafer (pre-cut).

  The adhesive composition and the film-like adhesive of the present invention include semiconductor elements such as IC and LSI, lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resins and epoxy resins; A material in which a base material is impregnated and cured with a plastic such as a polyimide resin or an epoxy resin; can be used as an adhesive material for die bonding for bonding an adherend such as a support member for mounting a ceramic such as alumina on a semiconductor. .

  Among them, it is suitably used as an adhesive material for die bonding for bonding an organic substrate having an uneven surface on a surface such as an organic substrate having an organic resist layer on the surface and an organic substrate having wiring on the surface, and a semiconductor element.

  Further, in the Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked, it is also suitably used as an adhesive material for bonding the semiconductor elements to the semiconductor elements.

  As a use of the film adhesive of the present invention, a semiconductor device provided with the film adhesive of the present invention will be specifically described with reference to the drawings. In recent years, semiconductor devices having various structures have been proposed, and the use of the film adhesive of the present invention is not limited to the semiconductor devices having the structure described below.

  FIG. 6 is a schematic cross-sectional view showing an embodiment of the semiconductor device of the present invention. In the semiconductor device 200 shown in FIG. 6, the semiconductor element 9 is bonded to the semiconductor element mounting support member 10 via the film adhesive 1 of the present invention, and the connection terminal (not shown) of the semiconductor element 9 is connected to the wire 11. And is electrically connected to an external connection terminal (not shown) and sealed with a sealing material 12.

  FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention. In the semiconductor device 210 shown in FIG. 7, the first-stage semiconductor element 9a is bonded to the semiconductor element mounting support member 10 on which the terminals 13 are formed via the film adhesive 1 of the present invention. A second-stage semiconductor element 9b is bonded onto 9a via a film adhesive 1 of the present invention. The connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to the external connection terminals via the wires 11, and are sealed with a sealing material. Thus, the film adhesive of the present invention can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.

  The semiconductor device (semiconductor package) shown in FIGS. 6 and 7 includes, for example, the film adhesive of the present invention interposed between the semiconductor element and the semiconductor mounting support member or between the semiconductor element and the semiconductor element. Are bonded by thermocompression bonding, and then subjected to steps such as a wire bonding step and, if necessary, a sealing step with a sealing material. The heating temperature in the thermocompression bonding step is usually 20 to 250 ° C., the load is usually 0.01 to 20 kgf, and the heating time is usually 0.1 to 300 seconds.

  Moreover, as a method of interposing the film adhesive of the present invention between a semiconductor element and a semiconductor mounting support member or between a semiconductor element and a semiconductor element, as described above, a semiconductor element with a film adhesive in advance is used. After manufacturing this, the method of affixing this to the supporting member for semiconductor element mounting or a semiconductor element is preferable.

  EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example.

(Synthesis of polymer A)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube and a nitrogen displacement device, 18.9 g of N- (4-hydroxyphenyl) maleimide (molecular weight 189) and 25.6 g of n-butyl acrylate (molecular weight 128) Was dissolved in 178 g of dimethylformamide (hereinafter “DMF”) uniformly, and 0.74 g of 2,2′-azobisisobutyronitrile (molecular weight 164, hereinafter referred to as “AIBN”) was added at room temperature (25 ° C.). Was added in small portions. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature for 30 minutes while blowing nitrogen gas.

  Next, the flask was heated to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature and then poured into distilled water for reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer A”). When GPC of the obtained polymer was measured, it was Mw = 27000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 74 degreeC.

(Synthesis of polymer B)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube and a nitrogen substitution device, 13.0 g of 4-maleimidobenzoic acid (molecular weight 217), 6.9 g of N-phenylmaleimide (molecular weight 173) and n-butyl To a solution in which 32.0 g of acrylate was uniformly dissolved in 204 g of DMF, 0.86 g of AIBN was added little by little at room temperature. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature for 30 minutes while blowing nitrogen gas.

  Next, the flask was heated to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature and then poured into distilled water for reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer B”). When GPC of the obtained polymer was measured, it was Mw = 33000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 60 degreeC.

(Synthesis of polymer C)
2. In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube and a nitrogen displacement device, 17.9 g of N-cyclohexylmaleimide (molecular weight 179), 25.6 g of n-butyl acrylate and acrylic acid (molecular weight 72) To a solution in which 6 g was uniformly dissolved in 188 g of DMF, 0.86 g of AIBN was added little by little at room temperature. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature for 30 minutes while blowing nitrogen gas.

  Next, the flask was heated to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature and then poured into distilled water for reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer C”). When GPC of the obtained polymer was measured, it was Mw = 35000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 44 degreeC.

(Synthesis of polymer D)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube and a nitrogen displacement device, 18.8 g of N-cyclohexylmaleimide, 19.2 g of n-butyl acrylate and 5.4 g of acrylic acid are uniformly dissolved in 174 g of DMF. To this solution, 0.81 g of AIBN was added in small portions at room temperature. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature for 30 minutes while blowing nitrogen gas.

  Next, the flask was heated to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature and then poured into distilled water for reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer D”). When GPC of the obtained polymer was measured, it was Mw = 29000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 68 degreeC.

(Synthesis of polymer E)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser and a nitrogen displacement device, 19.2 g of n-butyl acrylate, 5.4 g of acrylic acid and 23.4 g of styrene (molecular weight 104) are uniformly dissolved in 192 g of DMF. To the solution was added 1.11 g of AIBN in small portions at room temperature. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature for 30 minutes while blowing nitrogen gas.

  Next, the flask was heated to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature and then poured into distilled water for reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer E”). When GPC of the obtained polymer was measured, it was Mw = 42000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 52 degreeC.

(Synthesis of polymer PI-1)
In a 300 ml flask equipped with a thermometer, stirrer, condenser and nitrogen inlet tube, 13.67 g (0.1 mol) of 2,2-bis (4-aminophenoxyphenyl) propane and N-methyl-2-pyrrolidone ( 124 g (manufactured by Kanto Chemical Co., Inc.) was charged and stirred to prepare a uniform reaction solution. Next, 17.40 g (0.1 mol) of decamethylene bistrimellitate dianhydride previously purified by recrystallization from acetic anhydride was added to the reaction solution while the flask was placed in an ice bath and the reaction solution was cooled and stirred. Was added in small portions. After reacting at room temperature for 8 hours, 83 g of xylene was added to the reaction solution. Next, the reaction solution was heated to 180 ° C. and reacted for a while while blowing nitrogen gas, and then xylene was removed azeotropically with water to obtain a polyimide resin (polymer PI-1). When GPC of the obtained polyimide resin (polymer PI-1) was measured, it was Mw = 93100 in terms of polystyrene. Moreover, Tg of the obtained polyimide resin was 120 degreeC.

  The weight average molecular weight Mw and glass transition temperature Tg of said polymer were calculated | required with the following method.

<Measurement of weight average molecular weight Mw of polymer>
The weight average molecular weight by polystyrene conversion was calculated | required using the high performance liquid chromatography (C-R4A by Shimadzu Corporation).

<Measurement of glass transition temperature Tg of polymer>
Using a viscoelasticity analyzer “RSA-2” (trade name, manufactured by Rheometrics Co., Ltd.), a sample obtained by forming a film of the obtained polymer was subjected to a frequency of 1 Hz, a heating rate of 5 ° C./min, and a measurement temperature of −150 ° C. to 300 ° C. The tan δ peak temperature (temperature position of the main dispersion peak) when measured under the condition of ° C. was measured, and this was defined as Tg.

(Example 1 , Reference Examples 2 to 4, Comparative Examples 1 to 4)
Using each of the polymers (A to E) obtained above, each component was blended at a composition ratio (unit: part by mass) shown in Tables 1 and 2 below, and an adhesive composition (varnish for forming an adhesive layer) was obtained. Obtained.

In addition, the symbol of each component in Table 1 and Table 2 means the following.
ESCN-195: manufactured by Sumitomo Chemical Co., Ltd., cresol novolac type epoxy resin (epoxy equivalent 200).
HP-850N: manufactured by Hitachi Chemical Co., Ltd., phenol novolak (OH equivalent: 106).
TPPK: manufactured by Tokyo Chemical Industry Co., Ltd., tetraphenylphosphonium tetraphenylborate.
R972: manufactured by Nippon Aerosil Co., Ltd., hydrophobic fumed silica (average particle size: about 16 nm).
NMP: N-methyl-2-pyrrolidinone manufactured by Kanto Chemical Co., Inc.

The obtained adhesive layer forming varnish was applied on a base material (peeling agent-treated PET film) so that the film thickness after drying was 40 μm ± 5 μm, and in an oven at 80 ° C. for 30 minutes. Then, it heated at 120 degreeC for 30 minute (s), and obtained the adhesive sheet of Example 1 , Reference Examples 2-4 and Comparative Examples 1-4 by which a film adhesive was formed on a base material.

<Evaluation of low temperature adhesiveness>
The adhesive sheet obtained above was cut into a width of 10 mm and a length of 40 mm to obtain a film adhesive with a substrate. This film-like adhesive with a substrate is placed on the back surface (surface opposite to the support table) of the silicon wafer (6 inch diameter, thickness 400 μm) placed on the support table. In this way, lamination was performed by pressurizing with a roll (temperature 100 ° C., linear pressure 4 kgf / cm, feed rate 0.5 m / min).

  The sample thus prepared was subjected to a 90 ° peel test at room temperature using a rheometer (manufactured by Toyo Seiki Seisakusho Co., Ltd., “Strograph ES” (trade name)), and a film-like adhesive with a substrate was obtained. -The peel strength between silicon wafers was measured. Based on the measurement results, samples having a peel strength of 2 N / cm or more were evaluated as A, and samples having a peel strength of less than 2 N / cm were evaluated as C. The results are shown in Tables 1 and 2.

<Measurement of 260 ° C. Peel Strength (Evaluation of Adhesiveness at High Temperature)>
On a silicon chip (10 mm × 10 mm × 0.4 mm thickness), the film-like adhesive (5 mm × 5 mm × 40 μm thickness) obtained above and a silicon chip (5 mm × 5 mm × 0.4 mm thickness) are separated. The laminated silicon chip with adhesive was laminated, and this laminate was thermocompression bonded under the conditions of temperature: 200 ° C. (only Comparative Example 4 was 250 ° C.), pressure: 1 kgf / chip, and time: 10 seconds. The film adhesive was heat-cured at 180 ° C. for 5 hours.

  Then, after heating for 20 seconds on a 260 ° C. hot platen, the peel strength of the silicon chip was measured at a measurement speed of 0.5 mm / second using the adhesive strength evaluation apparatus shown in FIG. Was the peel strength. The peel strength after moisture absorption was measured by leaving the heat-cured laminate sample for 48 hours in a constant temperature and humidity chamber of 85 ° C./60% RH, and then measuring the peel strength at 260 ° C. in the same manner as described above. The results are shown in Tables 1 and 2.

  In the adhesive force evaluation apparatus 300 shown in FIG. 8, a handle 32 is provided around the fulcrum 33 at a variable angle at the tip of a rod attached to the push-pull gauge 31. The 260 ° C. peel strength is measured by placing a laminated body in which a silicon wafer 9 having protrusions and a silicon chip 35 are bonded via a film adhesive 1 on a heating plate 36 at 260 ° C. The peel stress when the handle 32 was moved at 0.5 mm / second in a state where the handle 32 was hooked on the protrusion of the wafer 9 was measured by the push-pull gauge 31.

  As shown in Tables 1 and 2, it is clear that the adhesive sheets of the examples are excellent in low-temperature sticking properties and have a sufficiently high 260 ° C. peel strength.

It is a schematic cross section which shows one Embodiment of the film adhesive which concerns on this invention. It is a schematic cross section which shows one Embodiment of the adhesive sheet which concerns on this invention. It is a schematic cross section which shows other one Embodiment of the adhesive sheet which concerns on this invention. It is a schematic cross section which shows other one Embodiment of the adhesive sheet which concerns on this invention. It is a schematic cross section which shows other one Embodiment of the adhesive sheet which concerns on this invention. It is a schematic cross section showing one embodiment of a semiconductor device of the present invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device of this invention. It is the schematic which shows a peel strength measuring apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Film adhesive, 2 ... Base material, 3 ... Cover film, 6 ... Adhesive layer, 7 ... Base film, 9, 9a, 9b ... Semiconductor element, 10 ... Semiconductor element mounting support member, 11 ... Wire , 12 ... sealing material, 13 ... terminal, 31 ... push-pull gauge, 35 ... silicon chip, 36 ... hot platen, 100, 110, 120, 130 ... adhesive sheet, 200, 210 ... semiconductor device.

Claims (10)

An adhesive composition used for forming a film adhesive for adhering a semiconductor element to an adherend,
(A) a thermoplastic polymer obtained by copolymerizing one or more maleimide compounds and one or more monofunctional vinyl compounds, and (B) a thermosetting resin ,
The maleimide compound includes a maleimide having a phenolic hydroxyl group,
An adhesive composition containing glycidyl ether of cresol novolac resin as the thermosetting resin . The heat glass transition temperature of the thermoplastic polymer is 0.99 ° C. or less, the adhesive composition according to claim 1. The film adhesive formed by shape | molding the adhesive composition of Claim 1 or 2 in a film form. An adhesive sheet comprising: a base material; and an adhesive layer made of the adhesive composition according to claim 1 or 2 provided on one surface of the base material. The adhesive sheet which has a laminated structure formed by laminating | stacking the film adhesive of Claim 3 , and a dicing sheet. The adhesive sheet according to claim 5 , wherein the dicing sheet has a base film and a pressure-sensitive adhesive layer provided on the base film. The semiconductor wafer with an adhesive layer provided with a semiconductor wafer and the adhesive bond layer which consists of a film adhesive of Claim 3 affixed on one surface of this semiconductor wafer. A semiconductor device in which a semiconductor element and an adherend are bonded by the film adhesive according to claim 3 . The manufacturing method of a semiconductor device which has the process of adhere | attaching a semiconductor element and a to-be-adhered body using the film adhesive of Claim 3 . A step of attaching the film adhesive of the adhesive sheet according to claim 5 or 6 to a semiconductor wafer;
A step of obtaining a plurality of individual semiconductor elements with film adhesive by cutting the semiconductor wafer with the film adhesive attached thereto;
Bonding the semiconductor element with a film adhesive to a semiconductor element mounting support member.

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