JP5499454B2 - Photosensitive adhesive composition, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device, and manufacturing method thereof - Google Patents
Photosensitive adhesive composition, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device, and manufacturing method thereof Download PDFInfo
- Publication number
- JP5499454B2 JP5499454B2 JP2008251220A JP2008251220A JP5499454B2 JP 5499454 B2 JP5499454 B2 JP 5499454B2 JP 2008251220 A JP2008251220 A JP 2008251220A JP 2008251220 A JP2008251220 A JP 2008251220A JP 5499454 B2 JP5499454 B2 JP 5499454B2
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- Prior art keywords
- adhesive
- adhesive layer
- photosensitive
- adhesive composition
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000853 adhesive Substances 0.000 title claims description 121
- 230000001070 adhesive effect Effects 0.000 title claims description 119
- 239000004065 semiconductor Substances 0.000 title claims description 92
- 239000012790 adhesive layer Substances 0.000 title claims description 58
- 239000000203 mixture Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229920000642 polymer Polymers 0.000 claims description 59
- 239000000178 monomer Substances 0.000 claims description 48
- 150000001875 compounds Chemical class 0.000 claims description 44
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 35
- 239000011347 resin Substances 0.000 claims description 35
- 239000002585 base Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 19
- 229920002554 vinyl polymer Polymers 0.000 claims description 19
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 18
- 239000003822 epoxy resin Substances 0.000 claims description 16
- 229920000647 polyepoxide Polymers 0.000 claims description 16
- 229920001187 thermosetting polymer Polymers 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 14
- 229920001577 copolymer Polymers 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 claims description 7
- 230000009477 glass transition Effects 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- -1 polypropylene Polymers 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 31
- 239000010408 film Substances 0.000 description 30
- 239000000945 filler Substances 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 20
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 20
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 11
- 229920003986 novolac Polymers 0.000 description 11
- 239000002966 varnish Substances 0.000 description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000004793 Polystyrene Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001723 curing Methods 0.000 description 8
- 229920002223 polystyrene Polymers 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000007664 blowing Methods 0.000 description 7
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000012153 distilled water Substances 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- 238000010992 reflux Methods 0.000 description 7
- 238000001226 reprecipitation Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000011256 inorganic filler Substances 0.000 description 5
- 229910003475 inorganic filler Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000007514 bases Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- MHCLJIVVJQQNKQ-UHFFFAOYSA-N ethyl carbamate;2-methylprop-2-enoic acid Chemical class CCOC(N)=O.CC(=C)C(O)=O MHCLJIVVJQQNKQ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012766 organic filler Substances 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Natural products C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 2
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 2
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006969 Curtius rearrangement reaction Methods 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006981 Stevens rearrangement reaction Methods 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 125000005270 trialkylamine group Chemical group 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- VLARLSIGSPVYHX-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 6-(2,5-dioxopyrrol-1-yl)hexanoate Chemical compound O=C1CCC(=O)N1OC(=O)CCCCCN1C(=O)C=CC1=O VLARLSIGSPVYHX-UHFFFAOYSA-N 0.000 description 1
- JAMNSIXSLVPNLC-UHFFFAOYSA-N (4-ethenylphenyl) acetate Chemical compound CC(=O)OC1=CC=C(C=C)C=C1 JAMNSIXSLVPNLC-UHFFFAOYSA-N 0.000 description 1
- NJPAJFFEXRMGDR-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine;benzo[a]anthracen-7-yloxyboronic acid Chemical compound C1CCC=CN2CCCNC21.C1=CC2=CC=CC=C2C2=C1C(OB(O)O)=C(C=CC=C1)C1=C2 NJPAJFFEXRMGDR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PWZXUQWQRVKGAH-UHFFFAOYSA-N 1-(1-phenylethyl)pyrrole-2,5-dione Chemical compound C=1C=CC=CC=1C(C)N1C(=O)C=CC1=O PWZXUQWQRVKGAH-UHFFFAOYSA-N 0.000 description 1
- LMGYOBQJBQAZKC-UHFFFAOYSA-N 1-(2-ethylphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 LMGYOBQJBQAZKC-UHFFFAOYSA-N 0.000 description 1
- OZIZEXQRIOURIJ-UHFFFAOYSA-N 1-(4-benzoylphenyl)pyrrole-2,5-dione Chemical compound C=1C=C(N2C(C=CC2=O)=O)C=CC=1C(=O)C1=CC=CC=C1 OZIZEXQRIOURIJ-UHFFFAOYSA-N 0.000 description 1
- BLLFPKZTBLMEFG-UHFFFAOYSA-N 1-(4-hydroxyphenyl)pyrrole-2,5-dione Chemical compound C1=CC(O)=CC=C1N1C(=O)C=CC1=O BLLFPKZTBLMEFG-UHFFFAOYSA-N 0.000 description 1
- LGSUUIGEQAOVIU-UHFFFAOYSA-N 1-(furan-2-ylmethyl)pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1CC1=CC=CO1 LGSUUIGEQAOVIU-UHFFFAOYSA-N 0.000 description 1
- NZDOXVCRXDAVII-UHFFFAOYSA-N 1-[4-(1h-benzimidazol-2-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=C(C=2NC3=CC=CC=C3N=2)C=C1 NZDOXVCRXDAVII-UHFFFAOYSA-N 0.000 description 1
- NCFIKBMPEOEIED-UHFFFAOYSA-N 1-acridin-9-ylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 NCFIKBMPEOEIED-UHFFFAOYSA-N 0.000 description 1
- MKRBAPNEJMFMHU-UHFFFAOYSA-N 1-benzylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1CC1=CC=CC=C1 MKRBAPNEJMFMHU-UHFFFAOYSA-N 0.000 description 1
- GRFNSWBVXHLTCI-UHFFFAOYSA-N 1-ethenyl-4-[(2-methylpropan-2-yl)oxy]benzene Chemical compound CC(C)(C)OC1=CC=C(C=C)C=C1 GRFNSWBVXHLTCI-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- BAWHYOHVWHQWFQ-UHFFFAOYSA-N 1-naphthalen-1-ylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC2=CC=CC=C12 BAWHYOHVWHQWFQ-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- QEDJMOONZLUIMC-UHFFFAOYSA-N 1-tert-butyl-4-ethenylbenzene Chemical compound CC(C)(C)C1=CC=C(C=C)C=C1 QEDJMOONZLUIMC-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BJELTSYBAHKXRW-UHFFFAOYSA-N 2,4,6-triallyloxy-1,3,5-triazine Chemical compound C=CCOC1=NC(OCC=C)=NC(OCC=C)=N1 BJELTSYBAHKXRW-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- MDKSQNHUHMMKPP-UHFFFAOYSA-N 2,5-bis(4-methoxyphenyl)-4-phenyl-1h-imidazole Chemical class C1=CC(OC)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC(OC)=CC=2)N1 MDKSQNHUHMMKPP-UHFFFAOYSA-N 0.000 description 1
- NSMWYRLQHIXVAP-UHFFFAOYSA-N 2,5-dimethylpiperazine Chemical compound CC1CNC(C)CN1 NSMWYRLQHIXVAP-UHFFFAOYSA-N 0.000 description 1
- RXAYEPUDXSKVHS-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-bis(3-methoxyphenyl)-1h-imidazole Chemical class COC1=CC=CC(C2=C(NC(=N2)C=2C(=CC=CC=2)Cl)C=2C=C(OC)C=CC=2)=C1 RXAYEPUDXSKVHS-UHFFFAOYSA-N 0.000 description 1
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- ACKPSZGIQNQZLW-UHFFFAOYSA-N 2-[2-[2-(oxiran-2-ylmethoxy)ethoxy]ethoxy]ethanol Chemical compound OCCOCCOCCOCC1CO1 ACKPSZGIQNQZLW-UHFFFAOYSA-N 0.000 description 1
- NQXNYVAALXGLQT-UHFFFAOYSA-N 2-[4-[9-[4-(2-hydroxyethoxy)phenyl]fluoren-9-yl]phenoxy]ethanol Chemical compound C1=CC(OCCO)=CC=C1C1(C=2C=CC(OCCO)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 NQXNYVAALXGLQT-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- 125000004198 2-fluorophenyl group Chemical group [H]C1=C([H])C(F)=C(*)C([H])=C1[H] 0.000 description 1
- VZMLJEYQUZKERO-UHFFFAOYSA-N 2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 VZMLJEYQUZKERO-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 1
- MWDGNKGKLOBESZ-UHFFFAOYSA-N 2-oxooctanal Chemical compound CCCCCCC(=O)C=O MWDGNKGKLOBESZ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- ZJGBFJBMTKEFNQ-UHFFFAOYSA-N 3-(2,5-dioxopyrrol-1-yl)benzoic acid Chemical compound OC(=O)C1=CC=CC(N2C(C=CC2=O)=O)=C1 ZJGBFJBMTKEFNQ-UHFFFAOYSA-N 0.000 description 1
- LBCCCVMXORNUMR-UHFFFAOYSA-N 3-(2,5-dioxopyrrol-1-yl)propanenitrile Chemical compound O=C1C=CC(=O)N1CCC#N LBCCCVMXORNUMR-UHFFFAOYSA-N 0.000 description 1
- GHUSKKAYJZBGCF-UHFFFAOYSA-N 3-(9H-fluoren-1-yl)pyrrole-2,5-dione Chemical compound O=C1NC(=O)C(C=2C3=C(C4=CC=CC=C4C3)C=CC=2)=C1 GHUSKKAYJZBGCF-UHFFFAOYSA-N 0.000 description 1
- QAVUFFJVZGZJMO-UHFFFAOYSA-N 3-methyl-1-phenylpyrrole-2,5-dione Chemical compound O=C1C(C)=CC(=O)N1C1=CC=CC=C1 QAVUFFJVZGZJMO-UHFFFAOYSA-N 0.000 description 1
- LKUOJDGRNKVVFF-UHFFFAOYSA-N 4-(2,5-dioxopyrrol-1-yl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1N1C(=O)C=CC1=O LKUOJDGRNKVVFF-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- IRQWEODKXLDORP-UHFFFAOYSA-N 4-ethenylbenzoic acid Chemical compound OC(=O)C1=CC=C(C=C)C=C1 IRQWEODKXLDORP-UHFFFAOYSA-N 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- ACVAAFHNDGTZLL-UHFFFAOYSA-N 5-(2,5-dioxopyrrol-1-yl)pentanoic acid Chemical compound OC(=O)CCCCN1C(=O)C=CC1=O ACVAAFHNDGTZLL-UHFFFAOYSA-N 0.000 description 1
- XHLKOHSAWQPOFO-UHFFFAOYSA-N 5-phenyl-1h-imidazole Chemical class N1C=NC=C1C1=CC=CC=C1 XHLKOHSAWQPOFO-UHFFFAOYSA-N 0.000 description 1
- WOJKKJKETHYEAC-UHFFFAOYSA-N 6-Maleimidocaproic acid Chemical compound OC(=O)CCCCCN1C(=O)C=CC1=O WOJKKJKETHYEAC-UHFFFAOYSA-N 0.000 description 1
- DHELHOUTNAEDJP-UHFFFAOYSA-N 7-(2,5-dioxopyrrol-1-yl)heptanoic acid Chemical compound OC(=O)CCCCCCN1C(=O)C=CC1=O DHELHOUTNAEDJP-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ADWCKQOZGLBUEA-UHFFFAOYSA-N C(=O)(O)CCCN1C(C=CC1=O)=O.C(=O)(O)CCN1C(C=CC1=O)=O Chemical compound C(=O)(O)CCCN1C(C=CC1=O)=O.C(=O)(O)CCN1C(C=CC1=O)=O ADWCKQOZGLBUEA-UHFFFAOYSA-N 0.000 description 1
- 0 C*c1ccc(C(C)(C)c2ccc([C@](C)(*)OCC*OC(C(*)=C)=O)cc2)cc1 Chemical compound C*c1ccc(C(C)(C)c2ccc([C@](C)(*)OCC*OC(C(*)=C)=O)cc2)cc1 0.000 description 1
- NBESUYWLQBSMLH-UHFFFAOYSA-N C1(=CC=CC=C1)C(=O)C(O)C1=CC=CC=C1.C1(=CC=CC=C1)OC(C(C1=CC=CC=C1)=O)C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)C(=O)C(O)C1=CC=CC=C1.C1(=CC=CC=C1)OC(C(C1=CC=CC=C1)=O)C1=CC=CC=C1 NBESUYWLQBSMLH-UHFFFAOYSA-N 0.000 description 1
- 101100255205 Caenorhabditis elegans rsa-2 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000005821 Claisen rearrangement reaction Methods 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000005618 Fries rearrangement reaction Methods 0.000 description 1
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical class OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- GHAZCVNUKKZTLG-UHFFFAOYSA-N N-ethyl-succinimide Natural products CCN1C(=O)CCC1=O GHAZCVNUKKZTLG-UHFFFAOYSA-N 0.000 description 1
- HDFGOPSGAURCEO-UHFFFAOYSA-N N-ethylmaleimide Chemical compound CCN1C(=O)C=CC1=O HDFGOPSGAURCEO-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- QEFJAXSAFBNZET-UHFFFAOYSA-N O1C(NC=C1)=O.C1(=CC=CC=C1)C(=O)C(O)C1=CC=CC=C1 Chemical class O1C(NC=C1)=O.C1(=CC=CC=C1)C(=O)C(O)C1=CC=CC=C1 QEFJAXSAFBNZET-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LFOXEOLGJPJZAA-UHFFFAOYSA-N [(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphoryl]-(2,6-dimethoxyphenyl)methanone Chemical compound COC1=CC=CC(OC)=C1C(=O)P(=O)(CC(C)CC(C)(C)C)C(=O)C1=C(OC)C=CC=C1OC LFOXEOLGJPJZAA-UHFFFAOYSA-N 0.000 description 1
- SEEVRZDUPHZSOX-WPWMEQJKSA-N [(e)-1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethylideneamino] acetate Chemical compound C=1C=C2N(CC)C3=CC=C(C(\C)=N\OC(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C SEEVRZDUPHZSOX-WPWMEQJKSA-N 0.000 description 1
- ARNIZPSLPHFDED-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(4-methoxyphenyl)methanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 ARNIZPSLPHFDED-UHFFFAOYSA-N 0.000 description 1
- GANNOFFDYMSBSZ-UHFFFAOYSA-N [AlH3].[Mg] Chemical class [AlH3].[Mg] GANNOFFDYMSBSZ-UHFFFAOYSA-N 0.000 description 1
- VYGUBTIWNBFFMQ-UHFFFAOYSA-N [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O Chemical compound [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O VYGUBTIWNBFFMQ-UHFFFAOYSA-N 0.000 description 1
- 150000001251 acridines Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229940027998 antiseptic and disinfectant acridine derivative Drugs 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical compound C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 1
- KVBYPTUGEKVEIJ-UHFFFAOYSA-N benzene-1,3-diol;formaldehyde Chemical compound O=C.OC1=CC=CC(O)=C1 KVBYPTUGEKVEIJ-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 150000003939 benzylamines Chemical class 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical class C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Substances FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 150000004657 carbamic acid derivatives Chemical class 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- UIWXSTHGICQLQT-UHFFFAOYSA-N ethenyl propanoate Chemical compound CCC(=O)OC=C UIWXSTHGICQLQT-UHFFFAOYSA-N 0.000 description 1
- XUXSQROIUORWRI-UHFFFAOYSA-N ethyl 2,5-dioxopyrrole-1-carboxylate Chemical compound CCOC(=O)N1C(=O)C=CC1=O XUXSQROIUORWRI-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- LLAZQXZGAVBLRX-UHFFFAOYSA-N methyl 2,5-dioxopyrrole-1-carboxylate Chemical compound COC(=O)N1C(=O)C=CC1=O LLAZQXZGAVBLRX-UHFFFAOYSA-N 0.000 description 1
- 229940086559 methyl benzoin Drugs 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- ZWRDBWDXRLPESY-UHFFFAOYSA-N n-benzyl-n-ethylethanamine Chemical compound CCN(CC)CC1=CC=CC=C1 ZWRDBWDXRLPESY-UHFFFAOYSA-N 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- SEEYREPSKCQBBF-UHFFFAOYSA-N n-methylmaleimide Chemical compound CN1C(=O)C=CC1=O SEEYREPSKCQBBF-UHFFFAOYSA-N 0.000 description 1
- LSCYTCMNCWMCQE-UHFFFAOYSA-N n-methylpyridin-4-amine Chemical compound CNC1=CC=NC=C1 LSCYTCMNCWMCQE-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 150000004885 piperazines Chemical class 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003147 proline derivatives Chemical class 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229940066771 systemic antihistamines piperazine derivative Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Description
本発明は、感光性接着剤組成物、接着シート、接着剤パターン、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法に関する。 The present invention relates to a photosensitive adhesive composition, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, a semiconductor device, and a manufacturing method thereof.
近年の電子部品の高性能化、高機能化に伴い、種々の形態を有する半導体パッケージが提案されている。半導体パッケージにおいて、半導体素子と半導体素子搭載用支持基材とを接着するための接着剤には、低応力性、低温接着性、耐湿信頼性、及び耐はんだリフロー性を有することが求められる。半導体パッケージの機能、形態及び組立プロセスの簡略化の手法によっては、パターン形成可能な感光性の機能を兼ね備えることが求められる場合もある。感光性とは光を照射した部分が化学的に変化し、水溶液や有機溶剤に不溶化又は可溶化する機能である。この感光性を有する感光性接着剤を用いると、フォトマスクを介して露光、現像処理を行うことで、高精細な接着剤パターンを形成することが可能となる。 2. Description of the Related Art Semiconductor packages having various forms have been proposed with the recent enhancement of performance and functionality of electronic components. In a semiconductor package, an adhesive for bonding a semiconductor element and a support base for mounting a semiconductor element is required to have low stress properties, low-temperature adhesiveness, moisture resistance reliability, and solder reflow resistance. Depending on the function and form of the semiconductor package and the method of simplifying the assembly process, it may be required to have a photosensitive function capable of forming a pattern. Photosensitivity is a function in which a portion irradiated with light is chemically changed and insolubilized or solubilized in an aqueous solution or an organic solvent. When this photosensitive photosensitive adhesive is used, a high-definition adhesive pattern can be formed by performing exposure and development processing through a photomask.
感光性材料としては、これまで、フォトレジストの他、ポリイミド樹脂前駆体(ポリアミド酸)又はポリイミド樹脂をベースとした材料が使用されていた(特許文献1〜3参照)。
従来の感光性材料の多くは、現像後の接着剤としての機能を想定して設計されてはいなかった。一般的なフォトレジストは接着剤として必要とされる耐熱性の確保が困難である。ポリイミド樹脂前駆体及びポリイミド樹脂は、耐熱性の点で優れているものの、前者の場合は熱閉環イミド化時に、後者の場合は加工時に、それぞれ300℃以上の高温を要するため、周辺材料への熱的ダメージが大きく、また、熱応力が発生しやすいなどの問題を有していた。そのため、ポリイミド樹脂などを用いた接着剤に熱硬化性樹脂を配合して架橋することにより、低温加工性及びはんだ耐熱性を改良することも試みられている。 Many of the conventional photosensitive materials have not been designed assuming a function as an adhesive after development. It is difficult for a general photoresist to secure the heat resistance required as an adhesive. Although the polyimide resin precursor and the polyimide resin are excellent in heat resistance, the former requires a high temperature of 300 ° C. or more at the time of thermal ring-closing imidization in the former case and the processing in the latter case. There were problems such as large thermal damage and easy occurrence of thermal stress. For this reason, attempts have also been made to improve low-temperature workability and solder heat resistance by blending and crosslinking a thermosetting resin in an adhesive using a polyimide resin or the like.
しかし、ポリイミド樹脂等を含む従来の感光性樹脂によれば、アルカリ現像液によるパターン形成性及び被着体への低温での貼り付け性の両方について同時に高いレベルを達成することは困難であった。また、露光後に熱圧着したときに高温でも十分に高い接着力を維持することが可能な、再接着性を付与することも困難であった。 However, according to conventional photosensitive resins including polyimide resins, it has been difficult to simultaneously achieve a high level of both pattern formability with an alkali developer and adhesion to an adherend at a low temperature. . Moreover, it has been difficult to impart re-adhesiveness that can maintain a sufficiently high adhesive force even at high temperatures when thermocompression bonding is performed after exposure.
本発明は、上記従来技術の有する課題に鑑みてなされたものであり、半導体素子を支持部材に接着するため用いられる半導体素子用感光性接着剤組成物において、アルカリ現像液によるパターン形成性及び再接着後の耐熱性と、フィルム状に形成されたときの低温貼付性の改善を図ることを主な目的とする。 The present invention has been made in view of the above-described problems of the prior art. In a photosensitive adhesive composition for a semiconductor element used for adhering a semiconductor element to a support member, pattern formation by an alkaline developer and re-use are possible. The main purpose is to improve the heat resistance after bonding and the low temperature sticking property when formed into a film.
本発明は、(A)マレイミド基を有するマレイミドモノマー及び単官能ビニルモノマーをモノマー単位として含む共重合体であるアルカリ可溶性ポリマーと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤とを含有する半導体素子用感光性接着剤組成物に関する。 The present invention includes (A) an alkali-soluble polymer that is a copolymer containing a maleimide monomer having a maleimide group and a monofunctional vinyl monomer as monomer units, (B) a thermosetting resin, and (C) a radiation polymerizable compound. (D) It is related with the photosensitive adhesive composition for semiconductor elements containing a photoinitiator.
上記本発明に係る感光性接着剤組成物によれば、アルカリ現像液によるパターン形成性及び再接着後の耐熱性と、フィルム状に形成されたときの低温貼付性の改善が可能である。 According to the photosensitive adhesive composition of the present invention, it is possible to improve the pattern formability with an alkali developer, the heat resistance after re-adhesion, and the low-temperature sticking property when formed into a film.
アルカリ可溶性ポリマーは、カルボキシル基及び/又はフェノール性水酸基を有する共重合体であることが好ましい。特に、マレイミドモノマーがカルボキシル基及び/又はフェノール性水酸基を有する化合物を含むことが好ましい。アルカリ可溶性ポリマーにカルボキシル基及び/又はフェノール性水酸基が導入されることにより、未硬化の感光性接着剤組成物のアルカリ現像液への溶解性が更に高まり、更に良好なパターン形成性が得られる。 The alkali-soluble polymer is preferably a copolymer having a carboxyl group and / or a phenolic hydroxyl group. In particular, the maleimide monomer preferably contains a compound having a carboxyl group and / or a phenolic hydroxyl group. By introducing a carboxyl group and / or a phenolic hydroxyl group into the alkali-soluble polymer, the solubility of the uncured photosensitive adhesive composition in the alkali developer is further increased, and a better pattern forming property is obtained.
上記熱硬化性樹脂はエポキシ樹脂であることが好ましい。エポキシ樹脂を用いることによって、作業性、生産性が更に向上する。 The thermosetting resin is preferably an epoxy resin. By using an epoxy resin, workability and productivity are further improved.
上記放射線重合性化合物はアクリレート基及び/又はメタクリレート基を有することが好ましい。アクリレート基等を有する放射線重合性化合物は、アルカリ可溶性ポリマーと組み合わせて使用することによって、より優れたパターン形成性の発揮に寄与する。 The radiation polymerizable compound preferably has an acrylate group and / or a methacrylate group. A radiation-polymerizable compound having an acrylate group or the like contributes to more excellent pattern formability when used in combination with an alkali-soluble polymer.
アルカリ可溶性ポリマーのガラス転移温度(Tg)は150℃以下であることが好ましい。アルカリ可溶性ポリマーのTgが低いことにより、より低い温度で被着体に貼り付けることが可能になり、周辺部材への熱的ダメージを抑制することができる。 The glass transition temperature (Tg) of the alkali-soluble polymer is preferably 150 ° C. or lower. When the Tg of the alkali-soluble polymer is low, it can be attached to the adherend at a lower temperature, and thermal damage to the peripheral member can be suppressed.
本発明に係る接着シートは、上記本発明に係る感光性接着剤組成物からなるフィルム状の接着剤層を備える。本発明に係る接着シートは基材を更に備え、該基材の一方面上に接着剤層が設けられていてもよい。 The adhesive sheet according to the present invention includes a film-like adhesive layer made of the photosensitive adhesive composition according to the present invention. The adhesive sheet according to the present invention may further include a base material, and an adhesive layer may be provided on one surface of the base material.
これら接着シートによれば、アルカリ現像液によるパターン形成性及び再接着後の耐熱性と、フィルム状に形成されたときの低温貼付性の改善が可能である。また、フィルム状の接着剤層を備えていることにより、接着シートは半導体装置組立プロセスの効率化に寄与できる。 According to these adhesive sheets, it is possible to improve the pattern formability with an alkali developer, the heat resistance after re-adhesion, and the low-temperature stickability when formed into a film. Moreover, by providing the film-like adhesive layer, the adhesive sheet can contribute to the efficiency of the semiconductor device assembly process.
本発明に係る接着剤パターンは、上記本発明に係る感光性接着剤組成物からなるフィルム状の接着剤層を露光し、露光後の前記接着剤層をアルカリ現像液を用いて現像することにより形成されるものである。 The adhesive pattern which concerns on this invention exposes the film-form adhesive layer which consists of the photosensitive adhesive composition which concerns on the said invention, and develops the said adhesive layer after exposure using an alkali developing solution. Is formed.
この接着剤パターンは高精細なパターンを有することが可能であり、再接着性にも優れる。 This adhesive pattern can have a high-definition pattern and is excellent in re-adhesion.
本発明に係る接着剤層付半導体ウェハは、半導体ウェハと、該半導体ウェハの一方面上に設けられた上記本発明に係る感光性接着剤組成物からなる接着剤層とを備える。 The semiconductor wafer with an adhesive layer according to the present invention includes a semiconductor wafer and an adhesive layer made of the photosensitive adhesive composition according to the present invention provided on one surface of the semiconductor wafer.
本発明はまた、支持部材と、該支持部材に搭載された半導体素子と、支持部材と半導体素子との間に介在する接着剤層とを備える半導体装置に関する。接着剤層は上記本発明に係る感光性接着剤組成物によって形成されている。 The present invention also relates to a semiconductor device including a support member, a semiconductor element mounted on the support member, and an adhesive layer interposed between the support member and the semiconductor element. The adhesive layer is formed by the photosensitive adhesive composition according to the present invention.
本発明に係る半導体装置は、上記本発明に係る感光性接着剤組成物を用いて半導体素子が支持部材に接着されていることから、優れた耐熱性及び耐湿信頼性を有する。 The semiconductor device according to the present invention has excellent heat resistance and moisture resistance reliability since the semiconductor element is bonded to the support member using the photosensitive adhesive composition according to the present invention.
本発明はまた、上記本発明に係る感光性接着剤組成物からなる接着剤層を露光し、露光後の前記接着剤層をアルカリ現像液を用いて現像することにより接着剤パターンを形成する工程と、接着剤パターンを介して半導体素子とこれが搭載される支持部材とを接着する工程とを備える半導体装置の製造方法に関する。 The present invention also includes a step of forming an adhesive pattern by exposing an adhesive layer comprising the photosensitive adhesive composition according to the present invention and developing the exposed adhesive layer using an alkaline developer. And a method of manufacturing a semiconductor device comprising a step of bonding a semiconductor element and a support member on which the semiconductor element is mounted via an adhesive pattern.
本発明に係る半導体装置、及び本発明に係る製造方法により得られる半導体装置は、上記本発明に係る感光性接着剤組成物を用いて半導体素子が支持部材に接着されていることから、優れた耐熱性及び耐湿信頼性を有する。 The semiconductor device according to the present invention and the semiconductor device obtained by the manufacturing method according to the present invention are excellent because the semiconductor element is bonded to the support member using the photosensitive adhesive composition according to the present invention. It has heat resistance and moisture resistance reliability.
本発明によれば、半導体素子を支持部材に接着するために用いられる半導体素子用感光性接着剤組成物において、アルカリ現像液によるパターン形成性及び再接着後の耐熱性と、フィルム状に形成されたときの低温貼付性の改善が可能である。 According to the present invention, in a photosensitive adhesive composition for a semiconductor element used for adhering a semiconductor element to a support member, the film is formed into a film with pattern forming properties by an alkali developer and heat resistance after re-adhesion. It is possible to improve the low-temperature sticking property.
また、本発明に係る感光性接着剤組成物は、被着体に圧着された後の加熱処理の際に未反応成分が揮発して被着体の剥離及び素子汚染を引き起こすことも抑制される。この点でも、未反応成分の揮発を生じやすかったポリイミド樹脂に対して有利である。 In addition, the photosensitive adhesive composition according to the present invention is also prevented from causing unreacted components to volatilize and cause peeling of the adherend and element contamination during the heat treatment after being pressure-bonded to the adherend. . This is also advantageous with respect to the polyimide resin that easily causes volatilization of unreacted components.
以下、場合により図面を参照しつつ本発明の好適な実施形態について詳細に説明する。なお、図面中、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。さらに、図面の寸法比率は図示の比率に限られるものではない。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.
図1、2及び3は、それぞれ接着シートの一実施形態を示す模式断面図である。図1に示す接着シート100は、フィルム状に成形された感光性接着剤組成物である接着剤層1から構成される。図2に示す接着シート110は、基材3と、これの一方面上に設けられた接着剤層1とから構成される。図3に示す接着シート120は、基材3と、基材3の一方面上に設けられた接着剤層1とカバーフィルム2とから構成される。接着剤層1を形成する感光性接着剤組成物は、(A)マレイミド基を有するマレイミドモノマーに由来するモノマー単位及び単官能ビニルモノマーに由来するモノマー単位を含む共重合体であるアルカリ可溶性ポリマーと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤とを含有する。感光性接着剤組成物の詳細については後述する。
1, 2 and 3 are schematic cross-sectional views each showing an embodiment of an adhesive sheet. The
図1の接着シート100は、後述の実施形態に係る感光性接着剤組成物を有機溶媒中で混合し、混合液を混練してワニスを調製し、基材3上にこのワニスの層を形成させ、加熱によりワニス層を乾燥した後に基材3を除去する方法で得ることができる。基材3を除去せずに、接着シート110又は120の状態で接着剤層1を保存及び使用することもできる。
The
上記の混合及び混練は、通常の攪拌機、らいかい機、三本ロール、ボールミル等の分散機を適宜組み合わせて行うことができる。なお、乾燥中に(B)熱硬化性樹脂が十分には反応しない温度で、かつ、溶媒が充分に揮散する条件で乾燥する。具体的には、通常60〜180℃で、0.1〜90分間加熱することによりワニス層を乾燥する。乾燥前の上記ワニス層の好ましい厚みは1〜100μmである。この厚みが1μm未満であると、接着固定機能が損なわれる傾向にあり、100μmを超えると、後述する残存揮発分が多くなる傾向にある。 The above mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, and a ball mill. In addition, it dries on the conditions which (B) thermosetting resin does not fully react during drying, and the solvent fully volatilizes. Specifically, the varnish layer is dried by heating at 60 to 180 ° C. for 0.1 to 90 minutes. The preferred thickness of the varnish layer before drying is 1 to 100 μm. If this thickness is less than 1 μm, the adhesive fixing function tends to be impaired, and if it exceeds 100 μm, the residual volatile matter described later tends to increase.
接着剤層1の好ましい残存揮発分は10質量%以下である。この残存揮発分が10質量%を超えると、組立加熱時の溶媒揮発による発泡が原因で、接着剤層内部にボイドが残存し易くなり、耐湿信頼性が損なわれる傾向にあり、また、加熱時に発生する揮発成分による周辺材料、あるいは部材を汚染する可能性も高くなる傾向がある。なお、上記の残存揮発成分の測定条件は次の通りである。すなわち、50mm×50mmサイズに切断した接着剤層の初期の質量をM1、160℃のオーブン中で3時間加熱された後の質量をM2とし、{(M1−M2)/M1}×100=残存揮発分(%)によって算出される値である。
The preferred residual volatile content of the
上記の熱硬化性樹脂が十分には反応しない温度とは、具体的には、DSC(例えば、パーキンエルマー社製「DSC−7型」(商品名))を用いて、サンプル量:10mg、昇温速度:5℃/分、測定雰囲気:空気、の条件で測定したときの反応熱のピーク温度以下の温度である。 Specifically, the temperature at which the thermosetting resin does not sufficiently react is determined by using DSC (for example, “DSC-7 type” (trade name) manufactured by PerkinElmer Co., Ltd.) The temperature is equal to or lower than the peak temperature of the heat of reaction when measured under the conditions of temperature rate: 5 ° C./min and measurement atmosphere: air.
ワニスの調製に用いる有機溶媒、すなわちワニス溶剤は、材料を均一に溶解又は分散できるものであれば、特に制限はない。例えば、ジメチルホルムアミド、トルエン、ベンゼン、キシレン、メチルエチルケトン、テトラヒドロフラン、エチルセロソルブ、エチルセロソルブアセテート、ジオキサン、シクロヘキサノン、酢酸エチル、及びN−メチル−ピロリジノンが挙げられる。 The organic solvent used for preparing the varnish, that is, the varnish solvent is not particularly limited as long as the material can be uniformly dissolved or dispersed. Examples include dimethylformamide, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, dioxane, cyclohexanone, ethyl acetate, and N-methyl-pyrrolidinone.
基材3は、上記の乾燥条件に耐えるものであれば特に限定されるものではない。例えば、ポリエステルフィルム、ポリプロピレンフィルム、ポリエチレンテレフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリエーテルナフタレートフィルム、メチルペンテンフィルムを基材3として用いることができる。基材3としてのフィルムは2種以上組み合わせた多層フィルムであってもよく、表面がシリコーン系、シリカ系等の離型剤などで処理されたものであってもよい。
The
接着剤層とダイシングシートとを積層することもできる。ダイシングシートは、基材上に粘着剤層を設けたシートであり、粘着剤層は、感圧型又は放射線硬化型のどちらでもよい。また、上記の基材はエキスパンド可能な基材が好ましい。このような接着シートとすることにより、ダイボンドフィルムとしての機能とダイシングシートとしての機能を併せ持つダイシング・ダイボンド一体型接着シートが得られる。 An adhesive layer and a dicing sheet can also be laminated. The dicing sheet is a sheet in which a pressure-sensitive adhesive layer is provided on a substrate, and the pressure-sensitive adhesive layer may be either a pressure-sensitive type or a radiation curable type. The base material is preferably a base material that can be expanded. By using such an adhesive sheet, a dicing / die bonding integrated adhesive sheet having both a function as a die bond film and a function as a dicing sheet can be obtained.
上記のダイシング・ダイボンド一体型接着シートとして具体的には、図4に示すように、基材7、粘着剤層6及び接着剤層1がこの順に形成されてなる接着シート130が挙げられる。
Specific examples of the dicing / die bonding integrated adhesive sheet include an
図5は、接着剤層付半導体ウェハの一実施形態を示す上面図であり、図6は図5のVI−VI線に沿った端面図である。図5、6に示す接着剤層付半導体ウェハ20は、半導体ウェハ8と、これの一方面上に設けられた、上記接着シートと同様の接着剤層1とを備える。
FIG. 5 is a top view showing an embodiment of a semiconductor wafer with an adhesive layer, and FIG. 6 is an end view taken along line VI-VI in FIG. A
接着剤層付半導体ウェハ20は、半導体ウェハ8上に、接着剤層1を加熱しながらラミネートすることにより得られる。接着剤層1は、後述の感光性接着剤組成物からなるシートであるため、例えば、室温(25℃)〜150℃程度の低温で半導体ウェハ8に貼付けることが可能である。
The
図7、図9は、接着剤層パターンの一実施形態を示す上面図である。図8は図7のVIII−VIII線に沿った端面図であり、図10は図9のX−X線に沿った端面図である。図7、8、9、10に示す接着剤パターン1a及び1bは、被着体としての半導体ウェハ8上において、略正方形の辺に沿ったパターン又は正方形のパターンを有するように形成されている。
7 and 9 are top views showing an embodiment of the adhesive layer pattern. 8 is an end view taken along line VIII-VIII in FIG. 7, and FIG. 10 is an end view taken along line XX in FIG. The
接着剤パターン1a及び1bは、感光性接着剤組成物からなる接着剤層1を被着体としての半導体ウェハ8上に形成して接着剤層付半導体ウェハ20を得、接着剤層1をフォトマスクを介して露光し、露光後の接着剤層1をアルカリ現像液により現像処理することにより形成される。また、これにより、接着剤パターン1a,1bが形成された接着剤層付半導体ウェハ20a,20bが得られる。
The
半導体装置の実施形態について図面を用いて具体的に説明する。なお、近年は様々な構造の半導体装置が提案されており、本発明の感光性接着剤組成物の用途は、以下に説明する構造の半導体装置に限定されるものではない。 Embodiments of a semiconductor device will be specifically described with reference to the drawings. In recent years, semiconductor devices having various structures have been proposed, and the use of the photosensitive adhesive composition of the present invention is not limited to the semiconductor devices having the structures described below.
図11は、半導体装置の一実施形態を示す模式断面図である。図11に示す半導体装置200において、半導体素子12は接着剤層1を介して半導体素子搭載用支持部材13に接着され、半導体素子12の接続端子はワイヤ14を介して外部接続端子と電気的に接続されている。半導体素子12は封止材15によって封止されている。
FIG. 11 is a schematic cross-sectional view showing an embodiment of a semiconductor device. In the
図12は、半導体装置の他の実施形態を示す模式断面図である。図12に示す半導体装置210において、一段目の半導体素子12aは、端子16が形成された半導体素子搭載用支持部材13に接着剤層1を介して接着され、一段目の半導体素子12aの上に更に接着剤層1を介して二段目の半導体素子12bが接着されている。一段目の半導体素子12a及び二段目の半導体素子12bの接続端子は、ワイヤ14を介して外部接続端子と電気的に接続されている。半導体素子12a,12bは封止材15によって封止されている。このように、本実施形態の感光性接着剤組成物は、半導体素子を複数重ねる構造の半導体装置にも好適に使用できる。
FIG. 12 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the
図11及び図12に示す半導体装置(半導体パッケージ)は、例えば、図9に示す接着剤層付半導体ウェハ20bを破線Dに沿ってダイシングし、ダイシング後の接着剤層付半導体素子を半導体素子搭載用支持部材13に加熱圧着して両者を接着させ、その後、ワイヤボンディング工程、必要に応じて封止材による封止工程等の工程を経ることにより得ることができる。上記加熱圧着における加熱温度は、通常20〜250℃であり、荷重は、通常0.01〜20kgfであり、加熱時間は、通常0.1〜300秒間である。
In the semiconductor device (semiconductor package) shown in FIGS. 11 and 12, for example, the
本発明の半導体素子用感光性接着剤組成物は、(A)マレイミド基を有するマレイミドモノマー及び単官能ビニルモノマーをモノマー単位として含む共重合体であるアルカリ可溶性ポリマーと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤とを含有する。 The photosensitive adhesive composition for a semiconductor device of the present invention includes (A) an alkali-soluble polymer that is a copolymer containing a maleimide monomer having a maleimide group and a monofunctional vinyl monomer as monomer units, and (B) a thermosetting resin. And (C) a radiation polymerizable compound and (D) a photoinitiator.
アルカリ可溶性ポリマーは、マレイミド基を有するマレイミドモノマー及び分子内に炭素−炭素二重結合を1つ有する単官能ビニルモノマーをモノマー単位として含む共重合体であれば、特に制限されるものではない。 The alkali-soluble polymer is not particularly limited as long as it is a copolymer containing a maleimide monomer having a maleimide group and a monofunctional vinyl monomer having one carbon-carbon double bond in the molecule as monomer units.
マレイミドモノマーとしては、例えば、N−メチルマレイミド及びN−エチルマレイミドに代表される、炭素数1〜10の直鎖若しくは分岐アルキル基を有するN−アルキルマレイミド、N−カルボキシアミドマレイミド、N−(2−シアノエチル)マレイミド、N−メトキシカルボニルマレイミド及びN−エトキシカルボニルマレイミドに代表される、炭素数1〜7の直鎖若しくは分岐アルコキシ基を有するN−アルコキシカルボニルマレイミド、N−(2−カルボキシエチル)マレイミド、N−(3−カルボキシプロピル)マレイミド、N−(4−カルボキシブチル)マレイミド、N−(5−カルボキシペンチル)マレイミド、N−(6−カルボキシヘキシル)マレイミド、N−フルフリルマレイミド、N−シクロヘキシルマレイミド、N−シクロペンチルマレイミド、N−ベンジルマレイミド、N−(1−フェニルエチル)マレイミド、N−(1−ナフチル)−マレイミド、N−メトキシポリエチレングリコールマレイミド、2−フルオレニルマレイミド、N−(9−アクリジニル)マレイミド、4−(N−マレイミド)ベンゾフェノン、4−(N−マレイミド)アゾベンゼン、N−[4−(2−ベンズイミダゾリル)フェニル]マレイミド、N−(1−ピレニルマレイミド)、3−マレイミド安息香酸N−ヒドロキシサクシンイミドエステル、6−マレイミドヘキサノイン酸N−ヒドロキシサクシンイミドエステル、及び、下記一般式(1)で示される化合物からなる群より選ばれる。これらのマレイミドモノマーは、単独で用いる他に、2種以上の化合物を混合して用いてもよい。 Examples of the maleimide monomer include N-alkylmaleimides having a linear or branched alkyl group having 1 to 10 carbon atoms, such as N-methylmaleimide and N-ethylmaleimide, N- (2 -Cyanoethyl) maleimide, N-methoxycarbonylmaleimide and N-ethoxycarbonylmaleimide represented by N-alkoxycarbonylmaleimide having a linear or branched alkoxy group having 1 to 7 carbon atoms, N- (2-carboxyethyl) maleimide N- (3-carboxypropyl) maleimide, N- (4-carboxybutyl) maleimide, N- (5-carboxypentyl) maleimide, N- (6-carboxyhexyl) maleimide, N-furfurylmaleimide, N-cyclohexyl Maleimide, -Cyclopentylmaleimide, N-benzylmaleimide, N- (1-phenylethyl) maleimide, N- (1-naphthyl) -maleimide, N-methoxypolyethyleneglycolmaleimide, 2-fluorenylmaleimide, N- (9-acridinyl) Maleimide, 4- (N-maleimido) benzophenone, 4- (N-maleimido) azobenzene, N- [4- (2-benzimidazolyl) phenyl] maleimide, N- (1-pyrenylmaleimide), 3-maleimidobenzoic acid It is selected from the group consisting of N-hydroxysuccinimide ester, 6-maleimidohexanoic acid N-hydroxysuccinimide ester, and a compound represented by the following general formula (1). These maleimide monomers may be used alone or as a mixture of two or more compounds.
R1及びR2はベンゼン環に結合する置換基を示し、それぞれ独立に、水素、炭素数1〜7の直鎖状アルキル基、炭素数1〜7の分岐したアルキル基、炭素数1〜7のアルコキシ基、フェニル基、水酸基、カルボキシル基、フッ素、シアノ基、イソシアネート基、ニトロ基、メルカプト基、炭素数1〜5のアルキルチオ基、トリフルオロメチル基、炭素数1〜7のエステル基、フェノキシ基、又は炭素数1〜7のアルキルカルボニル基を示す。式(1)の化合物のR1及びR2のうち一方は水酸基又はカルボキシル基であることが好ましい。式(1)の化合物の例としては、2−メチル−N−フェニルマレイミドがある。
R 1 and R 2 each represent a substituent bonded to the benzene ring, and each independently represents hydrogen, a linear alkyl group having 1 to 7 carbon atoms, a branched alkyl group having 1 to 7 carbon atoms, or 1 to 7 carbon atoms. Alkoxy group, phenyl group, hydroxyl group, carboxyl group, fluorine, cyano group, isocyanate group, nitro group, mercapto group, alkylthio group having 1 to 5 carbon atoms, trifluoromethyl group, ester group having 1 to 7 carbon atoms, phenoxy Group or an alkylcarbonyl group having 1 to 7 carbon atoms. One of R 1 and R 2 in the compound of formula (1) is preferably a hydroxyl group or a carboxyl group. An example of a compound of formula (1) is 2-methyl-N-phenylmaleimide.
上記の単官能ビニルモノマーとしては、熱ラジカル重合あるいは熱アニオン重合によってマレイミドモノマーと共重合可能な化合物であれば、特に制限なく公知の化合物を使用することができる。単官能ビニルモノマーは、例えば、スチレン誘導体、アリル誘導体、及び、アクリロイル基又はメタクリロイル基(以後、(メタ)アクリロイル基と呼ぶ)を有する(メタ)アクリル酸誘導体から選ばれる。 As the monofunctional vinyl monomer, a known compound can be used without particular limitation as long as it is a compound copolymerizable with a maleimide monomer by thermal radical polymerization or thermal anion polymerization. The monofunctional vinyl monomer is selected from, for example, a styrene derivative, an allyl derivative, and a (meth) acrylic acid derivative having an acryloyl group or a methacryloyl group (hereinafter referred to as a (meth) acryloyl group).
例えば、(メタ)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸ブチル、(メタ)アクリル酸−2−エチルヘキシルに代表される炭素数1〜18の直鎖状アルキル基を有する(メタ)アクリル酸エステル、炭素数1〜18の環状アルキル基を有する(メタ)アクリル酸エステル、EO変性あるいはPO変性された(メタ)アクリル酸エステル、(メタ)アクリル酸、イタコン酸、マレイン酸、フマル酸などの不飽和カルボン酸誘導体及びこれらの不飽和カルボン酸エステル誘導体、アクリロニトリル、メタクリロニトリルなどの不飽和ニトリル誘導体、アクリルアミド、メタクリルアミド、N−メチロールアクリルアミド、N−メチロールメタクリルアミドなどの不飽和アミド誘導体、酢酸ビニル、プロピオン酸ビニルなどのビニルエステル誘導体、メチルビニルエーテル、エチルビニルエーテルなどのビニルエーテル誘導体、エチレン、プロピレンなどのオレフィン誘導体、スチレン、p−ヒドロキシスチレン、α−メチルスチレン、4−アセトキシスチレン、4−t−ブチルスチレン、4−メトキシスチレン、4−t−ブトキシスチレン、4−ビニル安息香酸などのスチレン誘導体、N−ビニルホルムアミド、N−ビニルピロリドン、1−ビニルイミダゾール、ビニルカルバゾール等の窒素含有ビニル誘導体を単官能ビニルモノマーとして用いることができる。これらは単独で用いる他に2種類以上併用して使用することができ、アルカリ現像液への溶解性を発現させるために分子内にカルボキシル基又はフェノール性水酸基を有するビニル化合物とその他のビニル化合物とを併用することが可能である。 For example, it has a C1-C18 linear alkyl group represented by methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, and (meth) acrylate-2-ethylhexyl ( (Meth) acrylic acid ester, (meth) acrylic acid ester having a C1-C18 cyclic alkyl group, EO-modified or PO-modified (meth) acrylic acid ester, (meth) acrylic acid, itaconic acid, maleic acid, Unsaturated carboxylic acid derivatives such as fumaric acid and unsaturated carboxylic acid ester derivatives thereof, unsaturated nitrile derivatives such as acrylonitrile and methacrylonitrile, acrylamide, methacrylamide, N-methylol acrylamide, and unsaturated nitrile such as N-methylol methacrylamide Amide derivatives, vinyl acetate, vinyl propionate Any vinyl ester derivative, vinyl ether derivatives such as methyl vinyl ether and ethyl vinyl ether, olefin derivatives such as ethylene and propylene, styrene, p-hydroxystyrene, α-methylstyrene, 4-acetoxystyrene, 4-t-butylstyrene, 4-methoxy Use styrene derivatives such as styrene, 4-t-butoxystyrene, 4-vinylbenzoic acid, and nitrogen-containing vinyl derivatives such as N-vinylformamide, N-vinylpyrrolidone, 1-vinylimidazole, vinylcarbazole as monofunctional vinyl monomers. Can do. These can be used alone or in combination of two or more, and in order to develop solubility in an alkaline developer, a vinyl compound having a carboxyl group or a phenolic hydroxyl group in the molecule and other vinyl compounds Can be used in combination.
上記のマレイミドモノマー及び単官能ビニルモノマーをモノマー単位として含む共重合体であるアルカリ可溶性ポリマーは、熱ラジカル重合や熱アニオン重合等の公知の方法で作成することができるが、分子量制御をはじめとして重合方法が簡便でかつ官能基の制限が少ないことからラジカル重合がより好ましい。例えば、マレイミドモノマーと単官能ビニルモノマーを有機溶媒中に溶解し、窒素等の不活性雰囲気下でベンゾイルパーオキサイドに代表される過酸化物あるいはアゾビスイソブチロニトリル(AIBN)に代表されるアゾ化合物を加えて加熱しながら攪拌することで得ることができる。 The alkali-soluble polymer, which is a copolymer containing the maleimide monomer and the monofunctional vinyl monomer as monomer units, can be prepared by a known method such as thermal radical polymerization or thermal anion polymerization. Radical polymerization is more preferred because the method is simple and there are few functional group restrictions. For example, a maleimide monomer and a monofunctional vinyl monomer are dissolved in an organic solvent, and a peroxide represented by benzoyl peroxide or an azo represented by azobisisobutyronitrile (AIBN) in an inert atmosphere such as nitrogen. It can be obtained by adding a compound and stirring while heating.
アルカリ可溶性ポリマーの重量平均分子量は5000〜800000の範囲内で制御されていることが好ましく、10000〜100000がより好ましい。重量平均分子量がこの範囲にあると、シート状又はフィルム状としたときの強度、可とう性、及びタック性が適当であり、取り扱い性が良好となるとともに、アルカリ現像液に対して良好な溶解性を示す。上記重量平均分子量が5000を下まわると、感光性接着剤組成物のフィルム形成性が低下する傾向がある。また、上記重量平均分子量が800000を超えると、感光性接着剤組成物の流動性が低下して接着力が低下し、かつアルカリ現像液に対する溶解性も低下する傾向がある。 The weight average molecular weight of the alkali-soluble polymer is preferably controlled within a range of 5,000 to 800,000, more preferably 10,000 to 100,000. When the weight average molecular weight is within this range, the strength, flexibility, and tackiness of a sheet or film are appropriate, the handleability is good, and the alkali developer is well dissolved. Showing gender. When the said weight average molecular weight is less than 5000, there exists a tendency for the film formation of the photosensitive adhesive composition to fall. Moreover, when the said weight average molecular weight exceeds 800,000, the fluidity | liquidity of a photosensitive adhesive composition will fall, adhesive force will fall, and there exists a tendency for the solubility with respect to an alkali developing solution also to fall.
本発明の感光性接着剤組成物を用いたフィルム状の接着剤層をウェハ裏面へ貼り付ける場合、半導体ウェハの反りを抑制するという観点から、上記の貼り付け温度は、20〜200℃が好ましく、20〜150℃が更に好ましく、25〜100℃が更により好ましい。前記の温度での貼り付けを可能にするためには、上記接着剤層のTgを150℃以下にすることが好ましく、そのためには、アルカリ可溶性ポリマーのTgを150℃以下にすることが望ましく、−20〜100℃がより好ましい。前記のTgが150℃を超えると、ウェハ裏面への貼り付け温度が200℃を超える可能性が高くなり、ウェハ裏面への貼合せ後の反りが発生し易くなる傾向にあり、Tgが−20℃を下回ると、接着剤層の表面タックが強くなり過ぎて、取り扱い性が悪くなる傾向にある。なお、(A)アルカリ可溶性ポリマーとして、熱可塑性樹脂を使用してもよい。 When a film-like adhesive layer using the photosensitive adhesive composition of the present invention is attached to the back side of the wafer, the above-mentioned attaching temperature is preferably 20 to 200 ° C. from the viewpoint of suppressing the warpage of the semiconductor wafer. 20-150 degreeC is still more preferable, and 25-100 degreeC is still more preferable. In order to enable attachment at the above temperature, it is preferable to set the Tg of the adhesive layer to 150 ° C. or lower, and to that end, it is desirable to set the Tg of the alkali-soluble polymer to 150 ° C. or lower, -20-100 degreeC is more preferable. When the Tg exceeds 150 ° C., there is a high possibility that the bonding temperature on the back surface of the wafer exceeds 200 ° C., and warpage after bonding to the back surface of the wafer tends to occur, and Tg is −20. When the temperature is lower than 0 ° C., the surface tack of the adhesive layer becomes too strong, and the handleability tends to deteriorate. In addition, you may use a thermoplastic resin as (A) alkali-soluble polymer.
上記のアルカリ可溶性ポリマーの重量平均分子量及びTgを上記の範囲内とすることにより、ウェハ裏面への貼り付け温度を低く抑えることができるだけでなく、半導体素子を半導体素子搭載用支持部材に接着固定する際の加熱温度(ダイボンディング温度)も低くすることができ、半導体素子の反りの増大を抑制できる。また、ダイボンディング時の流動性やパターン形成性を有効に付与できる。なお、上記のTgとは、本発明の感光性接着剤組成物をフィルム化したときの主分散ピーク温度であり、レオメトリックス製粘弾性アナライザーRSA−2を用いて、昇温速度5℃/分、周波数1Hz、測定温度−150〜300℃の条件で測定し、Tg付近のtanδピーク温度を測定し、これをTgとした。また、上記の重量平均分子量とは、島津製作所製高速液体クロマトグラフィー(C−R4A)を用いて、ポリスチレン換算で測定したときの重量平均分子量である。 By setting the weight-average molecular weight and Tg of the alkali-soluble polymer within the above ranges, not only can the temperature for attaching to the backside of the wafer be kept low, but also the semiconductor element is adhesively fixed to the semiconductor element mounting support member. The heating temperature (die bonding temperature) at the time can also be lowered, and an increase in warpage of the semiconductor element can be suppressed. Further, fluidity and pattern formability during die bonding can be effectively imparted. The above-mentioned Tg is the main dispersion peak temperature when the photosensitive adhesive composition of the present invention is formed into a film, and using a rheometric viscoelasticity analyzer RSA-2, the heating rate is 5 ° C./min. The frequency was 1 Hz and the measurement temperature was −150 to 300 ° C., and the tan δ peak temperature in the vicinity of Tg was measured. Moreover, said weight average molecular weight is a weight average molecular weight when measured in polystyrene conversion using the high performance liquid chromatography (C-R4A) by Shimadzu Corporation.
本発明の感光性接着剤組成物は更に(B)熱硬化性樹脂を有する。本発明において熱硬化性樹脂とは、熱により架橋反応を起こしうる反応性化合物をいう。このような化合物としては、例えば、エポキシ樹脂、シアネート樹脂、ビスマレイミド樹脂、フェノール樹脂、ユリア樹脂、メラミン樹脂、アルキド樹脂、アクリル樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、シリコーン樹脂、レゾルシノールホルムアルデヒド樹脂、キシレン樹脂、フラン樹脂、ポリウレタン樹脂、ケトン樹脂、トリアリルシアヌレート樹脂、ポリイソシアネート樹脂、トリス(2−ヒドロキシエチル)イソシアヌラートを含有する樹脂、シクロペンタジエンから合成された熱硬化性樹脂、芳香族ジシアナミドの三量化による熱硬化性樹脂等が挙げられる。中でも、高温において優れた接着力を持たせることができる点で、エポキシ樹脂、シアネート樹脂及びビスマレイミド樹脂が好ましく、作業性、生産性の点からエポキシ樹脂が特に好ましい。これら熱硬化性樹脂は単独で又は二種類以上を組み合わせて用いることができる。 The photosensitive adhesive composition of the present invention further comprises (B) a thermosetting resin. In the present invention, the thermosetting resin refers to a reactive compound capable of causing a crosslinking reaction by heat. Examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acrylic resins, unsaturated polyester resins, diallyl phthalate resins, silicone resins, resorcinol formaldehyde resins, Xylene resin, furan resin, polyurethane resin, ketone resin, triallyl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, thermosetting resin synthesized from cyclopentadiene, aromatic Examples thereof include a thermosetting resin by trimerization of dicyanamide. Among these, epoxy resins, cyanate resins, and bismaleimide resins are preferable because they can have excellent adhesive strength at high temperatures, and epoxy resins are particularly preferable from the viewpoint of workability and productivity. These thermosetting resins can be used alone or in combination of two or more.
上記のエポキシ樹脂としては、分子内に少なくとも2個以上のエポキシ基を含むものがより好ましく、硬化性や硬化物特性の点からフェノールのグリシジルエーテル型のエポキシ樹脂が極めて好ましい。このような樹脂としては、例えば、ビスフェノールA型(又はAD型、S型、F型)のグリシジルエーテル、水添加ビスフェノールA型のグリシジルエーテル、エチレンオキシド付加体ビスフェノールA型のグリシジルエーテル、プロピレンオキシド付加体ビスフェノールA型のグリシジルエーテル、フェノールノボラック樹脂のグリシジルエーテル、クレゾールノボラック樹脂のグリシジルエーテル、ビスフェノールAノボラック樹脂のグリシジルエーテル、ナフタレン樹脂のグリシジルエーテル、3官能型(又は4官能型)のグリシジルエーテル、ジシクロペンタジエンフェノール樹脂のグリシジルエーテル、ダイマー酸のグリシジルエステル、3官能型(又は4官能型)のグリシジルアミン、ナフタレン樹脂のグリシジルアミン等が挙げられる。これらは単独で又は二種類以上を組み合わせて使用することができる。また、これらのエポキシ樹脂には、不純物イオンである、アルカリ金属イオン、アルカリ土類金属イオン、ハロゲンイオン、特に塩素イオンや加水分解性塩素等を300ppm以下に低減した高純度品を用いることが、エレクトロマイグレーション防止や金属導体回路の腐食防止のために好ましい。 As said epoxy resin, what contains at least 2 or more epoxy group in a molecule | numerator is more preferable, and the glycidyl ether type epoxy resin of phenol is very preferable from the point of sclerosis | hardenability and hardened | cured material property. Examples of such resins include bisphenol A type (or AD type, S type, and F type) glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, and propylene oxide adduct. Bisphenol A type glycidyl ether, phenol novolac resin glycidyl ether, cresol novolac resin glycidyl ether, bisphenol A novolac resin glycidyl ether, naphthalene resin glycidyl ether, trifunctional (or tetrafunctional) glycidyl ether, dicyclo Examples include glycidyl ether of pentadienephenol resin, glycidyl ester of dimer acid, trifunctional (or tetrafunctional) glycidylamine, glycidylamine of naphthalene resin, etc. It is. These can be used alone or in combination of two or more. In addition, for these epoxy resins, it is possible to use a high-purity product in which impurity ions, alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine are reduced to 300 ppm or less, It is preferable for preventing electromigration and preventing corrosion of metal conductor circuits.
上記のエポキシ樹脂は、(A)アルカリ可溶性ポリマー100質量部に対して0.1〜200質量部であることが好ましく、2〜50質量部であることが更に好ましい。エポキシ樹脂の量が200質量部を超えると、アルカリ水溶液への溶解性が低下し、パターン形成性が低下する傾向にある。0.1質量部未満であると、高温接着性が低くなる傾向にある。 The epoxy resin is preferably 0.1 to 200 parts by mass, more preferably 2 to 50 parts by mass with respect to 100 parts by mass of the (A) alkali-soluble polymer. When the amount of the epoxy resin exceeds 200 parts by mass, the solubility in an alkaline aqueous solution is lowered, and the pattern formability tends to be lowered. If it is less than 0.1 parts by mass, the high-temperature adhesiveness tends to be low.
上記のエポキシ樹脂を使用する場合は、必要に応じて硬化剤を使用することもできる。このような硬化剤としては、例えば、フェノール系化合物、脂肪族アミン、脂環族アミン、芳香族ポリアミン、ポリアミド、脂肪族酸無水物、脂環族酸無水物、芳香族酸無水物、ジシアンジアミド、有機酸ジヒドラジド、三フッ化ホウ素アミン錯体、イミダゾール類、第3級アミン等が挙げられ、中でもフェノール系化合物が好ましく、分子中に少なくとも2個以上のフェノール性水酸基を有するフェノール系化合物がより好ましい。このような化合物としては、例えばフェノールノボラック、クレゾールノボラック、t−ブチルフェノールノボラック、ジシクロペンタジェンクレゾールノボラック、ジシクロペンタジェンフェノールノボラック、キシリレン変性フェノールノボラック、ナフトール系化合物、トリスフェノール系化合物、テトラキスフェノールノボラック、ビスフェノールA型ノボラック、ポリ−p−ビニルフェノール、フェノールアラルキル樹脂等が挙げられる。これらの中で、数平均分子量が400〜30000の範囲内のものが好ましい。これにより、半導体装置組立加熱時に、半導体素子又は装置等の汚染の原因となる加熱時のアウトガスを抑制できる。 When using said epoxy resin, a hardening | curing agent can also be used as needed. Examples of such curing agents include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, Examples include organic acid dihydrazide, boron trifluoride amine complex, imidazoles, and tertiary amines. Among them, phenolic compounds are preferable, and phenolic compounds having at least two phenolic hydroxyl groups in the molecule are more preferable. Examples of such compounds include phenol novolak, cresol novolak, t-butylphenol novolak, dicyclopentagen cresol novolak, dicyclopentagen phenol novolak, xylylene modified phenol novolak, naphthol compound, trisphenol compound, tetrakisphenol novolak. Bisphenol A type novolak, poly-p-vinylphenol, phenol aralkyl resin and the like. Among these, those having a number average molecular weight in the range of 400 to 30,000 are preferable. Thereby, the outgas at the time of heating which causes the contamination of the semiconductor element or the device at the time of assembling the semiconductor device can be suppressed.
上記硬化剤の使用量は、前記エポキシ樹脂中のエポキシ基の総量(エポキシ当量)と、これと反応性を示す官能基の総量(例えばフェノール系化合物の水酸基当量)の比で決定され、官能基の総量/エポキシ基の総量(当量比)で0.2/1.0〜1.8/1.0の比率となるようにすることがより好ましい。この比率が、0.2/1.0未満の場合及び1.8/1.0を超える場合には未反応のエポキシ基や官能基が硬化物中に多量に残存することとなり、硬化物の機械特性を低下させる傾向がある。 The amount of the curing agent used is determined by the ratio between the total amount of epoxy groups (epoxy equivalent) in the epoxy resin and the total amount of functional groups reactive with the epoxy group (for example, the hydroxyl group equivalent of a phenolic compound). It is more preferable that the ratio is 0.2 / 1.0 to 1.8 / 1.0 in terms of the total amount of epoxy / total amount of epoxy groups (equivalent ratio). When this ratio is less than 0.2 / 1.0 and more than 1.8 / 1.0, a large amount of unreacted epoxy groups and functional groups remain in the cured product. There is a tendency to reduce mechanical properties.
本実施形態に係る感光性接着剤組成物は、(C)放射線重合性化合物を含有する。この放射線重合性化合物としては、紫外線や電子ビームなどの放射線の照射により、重合及び/又は硬化する化合物であれば、特に制限は無い。放射線重合性化合物の具体例としては、(メタ)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸ブチル、(メタ)アクリル酸2−エチルヘキシル、テトラヒドロフルフリル(メタ)アクリレート、ジエチレングリコールジ(メタ)アクリレート、トリエチレングリコールジ(メタ)アクリレート、テトラエチレングリコールジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、1,4−ブタンジオールジ(メタ)アクリレート、1,6−ヘキサンジオールジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、スチレン、ジビニルベンゼン、4−ビニルトルエン、4−ビニルピリジン、N−ビニルピロリドン、2−ヒドロキシエチル(メタ)アクリレート、1,3−(メタ)アクリロイルオキシ−2−ヒドロキシプロパン、1,2−(メタ)アクリロイルオキシ−2−ヒドロキシプロパン、メチレンビスアクリルアミド、N,N−ジメチルアクリルアミド、N−メチロールアクリルアミド、トリス(β−ヒドロキシエチル)イソシアヌレートのトリ(メタ)アクリレート、エポキシ(メタ)アクリレートオリゴマー、ウレタン(メタ)アクリレートオリゴマー、ポリエーテル(メタ)アクリレートオリゴマー、ポリエステル(メタ)アクリレートオリゴマー等のオリゴマー、ポリエチレングリコールジ(メタ)アクリレート、ポリアルキレングリコールジ(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンテニロキシエチル(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、イソシアヌル酸変性2官能(メタ)アクリレート、イソシアヌル酸変性3官能(メタ)アクリレート、ビスフェノキシエタノールフルオレン(メタ)アクリレート、ビスフェノールフルオレンジグリシジルエーテルのグリシジル基に(メタ)アクリル酸を付加させたエポキシ(メタ)アクリレート、ビスフェノールフルオレンジグリシジルエーテルのグリシジル基にエチレングリコールやプロピレングリコールを付加させた化合物に(メタ)アクリロイルオキシ基を導入した化合物、下記一般式(2)又は(3)で示される化合物等の多官能(メタ)アクリレート化合物、下記一般式(4)で表される化合物、ウレタンアクリレート若しくはウレタンメタクリレート、及び尿素(メタ)アクリレートが挙げられる。 The photosensitive adhesive composition according to this embodiment contains (C) a radiation polymerizable compound. The radiation-polymerizable compound is not particularly limited as long as it is a compound that can be polymerized and / or cured by irradiation with radiation such as ultraviolet rays and electron beams. Specific examples of radiation polymerizable compounds include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, diethylene glycol di- (Meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, trimethylolpropane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, 1,4-butanediol di (meth) ) Acrylate, 1,6-hexanediol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, Tylene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl (meth) acrylate, 1,3- (meth) acryloyloxy-2-hydroxypropane, 1,2- (meta ) Acryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, tris (β-hydroxyethyl) isocyanurate tri (meth) acrylate, epoxy (meth) acrylate oligomer, urethane ( Oligomers such as (meth) acrylate oligomer, polyether (meth) acrylate oligomer, polyester (meth) acrylate oligomer, polyethylene glycol di (meth) acrylate, polyalkylene glycol Di (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, isocyanuric acid modified bifunctional (meta ) Acrylate, isocyanuric acid-modified trifunctional (meth) acrylate, bisphenoxyethanol fluorene (meth) acrylate, epoxy (meth) acrylate with bisphenol fluorenediglycidyl ether glycidyl group added with (meth) acrylic acid, bisphenol fluorenediglycidyl ether A compound obtained by adding a (meth) acryloyloxy group to a compound obtained by adding ethylene glycol or propylene glycol to a glycidyl group of the following general formula (2) or ( Polyfunctional (meth) acrylate compounds such as compounds represented by) a compound represented by the following general formula (4), urethane acrylates or urethane methacrylates, and urea (meth) acrylate and the like.
[R3は水素又はメチル基、R4は水素又はメチル基、kは1〜8の整数、lは1〜8の整数を表す。]
[R 3 is hydrogen or a methyl group, R 4 is hydrogen or a methyl group, k is an integer of 1 to 8, and l is an integer of 1 to 8. ]
[R5は水素又はメチル基、R6は水素又はメチル基、mは1〜8の整数、nは0〜8の整数を表す。]
[R 5 represents hydrogen or a methyl group, R 6 represents hydrogen or a methyl group, m represents an integer of 1 to 8, and n represents an integer of 0 to 8. ]
[R7は水素原子又はメチル基を示し、q及びrは各々独立に1以上の整数を示す。]
[R 7 represents a hydrogen atom or a methyl group, and q and r each independently represents an integer of 1 or more. ]
ウレタンアクリレート及びウレタンメタクリレートは、例えば、ジオール類、下記一般式(5)で表されるイソシアネート化合物、及び下記一般式(6)で表される化合物の反応により生成する。 Urethane acrylate and urethane methacrylate are produced, for example, by reaction of a diol, an isocyanate compound represented by the following general formula (5), and a compound represented by the following general formula (6).
[R8は炭素原子数が1〜30の2価又は3価の有機基であり、sは0又は1を示す。]
[R 8 is a divalent or trivalent organic group having 1 to 30 carbon atoms, and s represents 0 or 1. ]
[R9は水素原子又はメチル基を示し、R10はエチレン基又はプロピレン基を示す。]
[R 9 represents a hydrogen atom or a methyl group, and R 10 represents an ethylene group or a propylene group. ]
尿素(メタ)アクリレートは、例えば、下記一般式(7)で表されるジアミンと、下記一般式(8)で表される化合物との反応により生成する。 Urea (meth) acrylate is produced, for example, by a reaction between a diamine represented by the following general formula (7) and a compound represented by the following general formula (8).
[R11は炭素原子数が2〜30の2価の有機基を示す。]
[R 11 represents a divalent organic group having 2 to 30 carbon atoms. ]
[R12は水素原子又はメチル基、R13は炭素原子数が2〜30の2価の有機基を示す。]
[R 12 represents a hydrogen atom or a methyl group, and R 13 represents a divalent organic group having 2 to 30 carbon atoms. ]
(C)放射線重合性化合物としては、以上のような化合物の他、官能基を含むビニル共重合体に、少なくとも1個のエチレン性不飽和基と、オキシラン環、イソシアネート基、水酸基、及びカルボキシル基等の官能基とを有する化合物を付加反応させて得られる、側鎖にエチレン性不飽和基を有する放射線重合性共重合体等などを使用することができる。 (C) As a radiation-polymerizable compound, in addition to the above compounds, a vinyl copolymer containing a functional group, at least one ethylenically unsaturated group, an oxirane ring, an isocyanate group, a hydroxyl group, and a carboxyl group A radiation-polymerizable copolymer having an ethylenically unsaturated group in the side chain, obtained by addition reaction of a compound having a functional group such as, etc. can be used.
これらの放射線重合性化合物は、単独で又は2種類以上を組み合わせて使用することができる。なかでも上記一般式(4)で示される放射線重合化合物は硬化後の耐溶剤性を付与できる点で好ましく、ウレタンアクリレート及びウレタンメタクリレートは硬化後の高接着性を付与できる点で好ましい。 These radiation polymerizable compounds can be used alone or in combination of two or more. Especially, the radiation polymerization compound shown by the said General formula (4) is preferable at the point which can provide the solvent resistance after hardening, and urethane acrylate and urethane methacrylate are preferable at the point which can provide the high adhesiveness after hardening.
(C)放射線重合性化合物の含量は、(A)アルカリ可溶性ポリマー100質量部に対して10〜200質量部であることが好ましく、30〜150質量部であることが更に好ましい。放射線重合性化合物の量が200質量部を超えると、重合により、熱溶融時の流動性が低下し、熱圧着時の接着性が低下する傾向にある。10質量部未満であると、露光による光硬化後の耐溶剤性が低くなり、パターンを形成するのが困難となる傾向にある。 (C) The content of the radiation-polymerizable compound is preferably 10 to 200 parts by mass, more preferably 30 to 150 parts by mass with respect to 100 parts by mass of the (A) alkali-soluble polymer. When the amount of the radiation-polymerizable compound exceeds 200 parts by mass, the fluidity at the time of heat melting decreases due to polymerization, and the adhesiveness at the time of thermocompression bonding tends to decrease. If it is less than 10 parts by mass, the solvent resistance after photocuring by exposure tends to be low, and it tends to be difficult to form a pattern.
本実施形態に係る接着剤組成物は(D)光開始剤を含有する。この光開始剤としては、放射線照射によって遊離ラジカルを生成する光重合開始剤、あるいは放射線照射によって塩基を発生する光塩基発生剤などが例示できる。光開始剤としては、感度を良くするために、300〜500nmにおいて吸収帯を有するものが好ましい。光開始剤の具体例としては、ベンゾフェノン、N,N’−テトラメチル−4,4’−ジアミノベンゾフェノン(ミヒラーケトン)、N,N’−テトラエチル−4,4’−ジアミノベンゾフェノン、4−メトキシ−4’−ジメチルアミノベンゾフェノン、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン−1、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン、1−ヒドロキシ−シクロヘキシル−フェニル−ケトン、2−メチル−1−(4−(メチルチオ)フェニル)−2−モルフォリノプロパノン−1、2,4−ジエチルチオキサントン、2−エチルアントラキノン、フェナントレンキノン等の芳香族ケトン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインフェニルエーテル等のベンゾインエーテル、メチルベンゾイン、エチルベンゾイン等のベンゾイン、ベンジルジメチルケタール等のベンジル誘導体、2−(o−クロロフェニル)−4,5−ジフェニルイミダゾール二量体、2−(o−クロロフェニル)−4,5−ジ(m−メトキシフェニル)イミダゾール二量体、2−(o−フルオロフェニル)−4,5−フェニルイミダゾール二量体、2−(o−メトキシフェニル)−4,5−ジフェニルイミダゾール二量体、2−(p−メトキシフェニル)−4,5−ジフェニルイミダゾール二量体、2,4−ジ(p−メトキシフェニル)−5−フェニルイミダゾール二量体、2−(2,4−ジメトキシフェニル)−4,5−ジフェニルイミダゾール二量体等の2,4,5−トリアリールイミダゾール二量体、9−フェニルアクリジン、1,7−ビス(9,9’−アクリジニル)ヘプタン等のアクリジン誘導体、ビス(2,6−ジメトキシベンゾイル)−2,4,4−トリメチル−ペンチルフォスフィンオキサイド、ビス(2,4,6,−トリメチルベンゾイル)−フェニルフォスフィンオキサイド等のビスアシルフォスフィンオキサイド、1,2−オクタンジオン,1−[4−(フェニルチオ)−2−(O−ベンゾイルオキシム)]、(E)−1−(1−(9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル)エチリデンアミノオキシ)エタノンなどが挙げられる。これらは単独で又は二種類以上を組み合わせて使用することができる。 The adhesive composition according to this embodiment contains (D) a photoinitiator. Examples of the photoinitiator include a photopolymerization initiator that generates free radicals upon irradiation, a photobase generator that generates a base upon irradiation, and the like. As a photoinitiator, in order to improve sensitivity, those having an absorption band at 300 to 500 nm are preferable. Specific examples of the photoinitiator include benzophenone, N, N′-tetramethyl-4,4′-diaminobenzophenone (Michler ketone), N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy-4 '-Dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy-cyclohexyl -Aromatic ketones such as phenyl-ketone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropanone-1,2,4-diethylthioxanthone, 2-ethylanthraquinone, phenanthrenequinone, benzoin methyl Ether, benzoin ethyl ether, benzoin phenyl ether Benzoin ether, benzoin such as methylbenzoin and ethylbenzoin, benzyl derivatives such as benzyldimethyl ketal, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5 -Di (m-methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-phenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5-phenylimidazole dimer, 2- (2,4-dimethoxyphenyl) 2,4,5-triarylimidazole dimer such as -4,5-diphenylimidazole dimer, 9-pheny Acridine derivatives such as acridine, 1,7-bis (9,9′-acridinyl) heptane, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide, bis (2,4,4) Bisacylphosphine oxide such as 6, -trimethylbenzoyl) -phenylphosphine oxide, 1,2-octanedione, 1- [4- (phenylthio) -2- (O-benzoyloxime)], (E) -1 -(1- (9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl) ethylideneaminooxy) ethanone and the like. These can be used alone or in combination of two or more.
光開始剤の量には特に制限はないが、(A)アルカリ可溶性ポリマー100質量部に対して通常0.01〜30質量部である。 Although there is no restriction | limiting in particular in the quantity of a photoinitiator, Usually, it is 0.01-30 mass parts with respect to 100 mass parts of (A) alkali-soluble polymer.
上記の光塩基発生剤は、放射線照射時に塩基を発生する化合物であれば特に制限は受けない。発生する塩基としては、反応性、硬化速度の点から強塩基性化合物が好ましい。一般的には、塩基性の指標として酸解離定数の対数であるpKa値が使用され、水溶液中でのpKa値が7以上の塩基が好ましく、9以上の塩基がより好ましい。 The photobase generator is not particularly limited as long as it is a compound that generates a base upon irradiation with radiation. As the base to be generated, a strongly basic compound is preferable in terms of reactivity and curing speed. In general, a pKa value that is a logarithm of an acid dissociation constant is used as a basic index, and a base having a pKa value in an aqueous solution of 7 or more is preferable, and a base of 9 or more is more preferable.
このような塩基性を示す光塩基発生剤の例としては、イミダゾール、2,4−ジメチルイミダゾール、1−メチルイミダゾール等のイミダゾール誘導体、ピペラジン、2,5−ジメチルピペラジン等のピペラジン誘導体、ピペリジン、1,2−ジメチルピペリジン等のピペリジン誘導体、プロリン誘導体、トリメチルアミン、トリエチルアミン、トリエタノールアミン等のトリアルキルアミン誘導体、4−メチルアミノピリジン、4−ジメチルアミノピリジン等の4位にアミノ基又はアルキルアミノ基が置換したピリジン誘導体、ピロリジン、n−メチルピロリジン等のピロリジン誘導体、トリエチレンジアミン、1,8−ジアザビスシクロ(5,4,0)ウンデセン−1(DBU)等の脂環式アミン誘導体、ベンジルメチルアミン、ベンジルジメチルアミン、ベンジルジエチルアミン等のベンジルアミン誘導体等が挙げられる。 Examples of such photobase generators exhibiting basicity include imidazole derivatives such as imidazole, 2,4-dimethylimidazole and 1-methylimidazole, piperazine derivatives such as piperazine and 2,5-dimethylpiperazine, piperidine, 1 Piperidine derivatives such as 2-dimethylpiperidine, proline derivatives, trialkylamine derivatives such as trimethylamine, triethylamine, triethanolamine, 4-methylaminopyridine, 4-dimethylaminopyridine and the like, an amino group or an alkylamino group is at the 4-position Substituted pyridine derivatives, pyrrolidine derivatives such as pyrrolidine and n-methylpyrrolidine, alicyclic amine derivatives such as triethylenediamine and 1,8-diazabiscyclo (5,4,0) undecene-1 (DBU), benzylmethylamine, benzi Dimethylamine, and the like benzylamine derivatives such as benzyl diethylamine.
上記の強塩基性化合物を放射線照射によって発生するものとしては、例えば、Journal of Photopolymer Science and Technology 12巻、313〜314項(1999年)やChemistry of Materials 11巻、170〜176項(1999年)等に記載されている4級アンモニウム塩誘導体を用いることができる。これらは、活性光線の照射により強塩基性のトリアルキルアミンを生成するため、エポキシ樹脂の硬化には最適である。
Examples of the compounds generated by irradiation with the above-mentioned strongly basic compounds include, for example, Journal of Photopolymer Science and
Journal of American Chemical Society 118巻 12925頁(1996年)やPolymer Journal 28巻 795頁(1996年)等に記載されているカルバミン酸誘導体を用いることもできる。 The carbamic acid derivatives described in Journal of American Chemical Society 118, 12925 (1996), Polymer Journal 28, 795 (1996), and the like can also be used.
活性光線の照射により1級のアミノ基を発生するオキシム誘導体、光ラジカル発生剤として市販されている2−メチル−1(4−(メチルチオ)フェニル)−2−モルフォリノプロパン−1−オン(Ciba Speciality Chemicals社製イルガキュア907)、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタノン−1(Ciba Speciality Chemicals社製イルガキュア369)、ヘキサアリールビスイミダゾール誘導体(ハロゲン、アルコキシ基、ニトロ基、シアノ基等の置換基がフェニル基に置換されていてもよい)、ベンゾインオキサゾロン誘導体等も用いることができる。 An oxime derivative that generates a primary amino group upon irradiation with actinic rays, a commercially available 2-methyl-1 (4- (methylthio) phenyl) -2-morpholinopropan-1-one (Ciba) as a photo radical generator Irgacure 907 from Specialty Chemicals, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1 (Irgacure 369 from Ciba Specialty Chemicals), hexaarylbisimidazole derivative (halogen, alkoxy group) In addition, a substituent such as a nitro group or a cyano group may be substituted with a phenyl group), a benzoin oxazolone derivative, or the like can also be used.
前記活性光線による光塩基発生剤の他に、光フリース転位、光クライゼン転位(光Cleisen転位)やクルチウス転位(Curtius転位)、スチーブンス転位(Stevens転位)によっても塩基性化合物を発生させ、エポキシ樹脂の硬化を行うことができる。 In addition to the photobase generator by the actinic ray, a basic compound is also generated by photo-Fries rearrangement, photo-Claisen rearrangement (photo-Cleisen rearrangement), Curtius rearrangement (Curtius rearrangement), and Stevens rearrangement (Stevens rearrangement) Curing can be performed.
上記の光塩基発生剤としては、分子量500以下の低分子化合物を用いる他、高分子の主鎖及び側鎖に導入した化合物を用いても良い。この場合の分子量としては、粘接着剤としての粘接着性、流動性の観点から重量平均分子量1000〜100000が好ましく、より好ましくは5000〜30000である。 As the photobase generator, a low molecular compound having a molecular weight of 500 or less may be used, or a compound introduced into the main chain and side chain of a polymer may be used. The molecular weight in this case is preferably a weight average molecular weight of 1,000 to 100,000, more preferably 5,000 to 30,000 from the viewpoints of adhesiveness and fluidity as an adhesive.
これらの化合物は、室温(25℃)で放射線を照射しない状態ではエポキシ樹脂と反応性を示さないため、室温(25℃)での貯蔵安定性は非常に優れているという特徴を持つ。 Since these compounds do not show reactivity with the epoxy resin in a state where they are not irradiated with radiation at room temperature (25 ° C.), they have a feature of excellent storage stability at room temperature (25 ° C.).
本実施形態に係る感光性接着剤組成物は、必要に応じて、硬化促進剤を更に含有してもよい。硬化促進剤としては、(B)熱硬化性樹脂を硬化させるものであれば特に制限はなく、例えば、イミダゾール類、ジシアンジアミド誘導体、ジカルボン酸ジヒドラジド、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、2−エチル−4−メチルイミダゾール−テトラフェニルボレート、1,8−ジアザビシクロ[5.4.0]ウンデセン−7−テトラフェニルボレート等が挙げられる。 The photosensitive adhesive composition according to this embodiment may further contain a curing accelerator as necessary. The curing accelerator is not particularly limited as long as it cures the (B) thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2- Examples include ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate.
本実施形態に係る感光性接着剤組成物は、照射光の高吸収化、高感度化を目的に、増感剤を更に含有しても良い。使用する増感剤としては、(B)熱硬化性樹脂に悪影響を及ぼさない限り、公知の一重項増感剤、三重項増感剤を用いることができる。例えば、ナフタレン、アントラセン、ピレン等の芳香族化合物誘導体、カルバゾール誘導体、ベンゾフェノン誘導体、チオキサントン誘導体、クマリン誘導体等が好適に用いられる。増感剤の使用量は、増感剤の吸収波長及びモル吸光係数を参考にする必要があるが、一般的に(D)光開始剤1質量部に対して0.01〜5質量部であり、0.1〜2質量部が好ましい。増感剤が0.01質量部未満では光吸収の効率が低くなり、5質量部を超えると感光性接着剤組成物全体に光が届かない可能性がある。 The photosensitive adhesive composition according to the present embodiment may further contain a sensitizer for the purpose of increasing the absorption and sensitivity of irradiated light. As the sensitizer to be used, known singlet sensitizers and triplet sensitizers can be used as long as they do not adversely affect the (B) thermosetting resin. For example, aromatic compound derivatives such as naphthalene, anthracene, and pyrene, carbazole derivatives, benzophenone derivatives, thioxanthone derivatives, and coumarin derivatives are preferably used. The amount of the sensitizer used should refer to the absorption wavelength and molar extinction coefficient of the sensitizer, but is generally 0.01 to 5 parts by mass with respect to 1 part by mass of the (D) photoinitiator. Yes, 0.1-2 mass parts is preferable. If the sensitizer is less than 0.01 parts by mass, the light absorption efficiency is low, and if it exceeds 5 parts by mass, the light may not reach the entire photosensitive adhesive composition.
本実施形態に係る感光性接着剤組成物は、フィラーを含有することもできる。フィラーとしては、例えば、銀粉、金粉、銅粉、ニッケル粉等の金属フィラー、アルミナ、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、結晶性シリカ、非晶性シリカ、窒化ホウ素、チタニア、ガラス、酸化鉄、セラミック等の無機フィラー、カーボン、ゴム系フィラー等の有機フィラー等が挙げられ、種類・形状等にかかわらず特に制限なく使用することができる。 The photosensitive adhesive composition according to this embodiment can also contain a filler. Examples of the filler include metal fillers such as silver powder, gold powder, copper powder, and nickel powder, alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, Inorganic fillers such as aluminum oxide, aluminum nitride, crystalline silica, amorphous silica, boron nitride, titania, glass, iron oxide, and ceramics, and organic fillers such as carbon and rubber fillers are included. Regardless, it can be used without any particular restrictions.
上記フィラーは所望する機能に応じて使い分けることができる。例えば、金属フィラーは、接着剤組成物に導電性、熱伝導性、チキソ性等を付与する目的で添加され、非金属無機フィラーは、接着剤層に熱伝導性、低熱膨張性、低吸湿性等を付与する目的で添加され、有機フィラーは接着剤層に靭性等を付与する目的で添加される。これら金属フィラー、無機フィラー又は有機フィラーは、単独で又は二種類以上を組み合わせて使用することができる。中でも、半導体装置用接着材料に求められる、導電性、熱伝導性、低吸湿特性、絶縁性等を付与できる点で、金属フィラー、無機フィラー、又は絶縁性のフィラーが好ましく、無機フィラー、又は絶縁性フィラーの中では、樹脂ワニスに対する分散性が良好でかつ、熱時の高い接着力を付与できる点でシリカフィラーがより好ましい。 The filler can be used properly according to the desired function. For example, the metal filler is added for the purpose of imparting conductivity, thermal conductivity, thixotropy, etc. to the adhesive composition, and the nonmetallic inorganic filler is thermally conductive, low thermal expansion, low hygroscopicity to the adhesive layer. The organic filler is added for the purpose of imparting toughness to the adhesive layer. These metal fillers, inorganic fillers or organic fillers can be used alone or in combination of two or more. Among them, a metal filler, an inorganic filler, or an insulating filler is preferable, and an inorganic filler or an insulating filler is preferable in that it can provide conductivity, thermal conductivity, low moisture absorption characteristics, insulating properties, and the like required for an adhesive material for a semiconductor device. Among the fillers, the silica filler is more preferable in that it has good dispersibility with respect to the resin varnish and can impart a high adhesive force when heated.
上記フィラーの平均粒子径は、好ましくは、10μm以下、最大粒子径は30μm以下であり、平均粒子径が5μm以下、最大粒子径が20μm以下であることがより好ましい。平均粒子径が10μmを超え、かつ最大粒子径が30μmを超えると、破壊靭性向上の効果が得られない傾向がある。下限は特に制限はないが、通常、どちらも0.001μmである。 The average particle diameter of the filler is preferably 10 μm or less, the maximum particle diameter is 30 μm or less, the average particle diameter is 5 μm or less, and the maximum particle diameter is more preferably 20 μm or less. When the average particle diameter exceeds 10 μm and the maximum particle diameter exceeds 30 μm, the effect of improving fracture toughness tends to be not obtained. Although there is no restriction | limiting in particular in a lower limit, Usually, both are 0.001 micrometer.
上記フィラーは、平均粒子径10μm以下、最大粒子径は30μm以下の両方を満たすことが好ましい。最大粒子径が30μm以下であるが平均粒子径が10μmを超えるフィラーを使用すると、高い接着強度を得にくくなる。また、平均粒子径は10μm以下であるが最大粒子径が25μmを超えるフィラーを使用すると、粒径分布が広くなり接着強度にばらつきが出やすくなる。また、感光性接着剤組成物を薄膜フィルム状に加工して使用する際、表面が粗くなり接着力が低下する傾向がある。 The filler preferably satisfies both an average particle size of 10 μm or less and a maximum particle size of 30 μm or less. If a filler having a maximum particle size of 30 μm or less but an average particle size exceeding 10 μm is used, it becomes difficult to obtain high adhesive strength. Further, when a filler having an average particle size of 10 μm or less but having a maximum particle size exceeding 25 μm is used, the particle size distribution is widened and the adhesive strength tends to vary. Moreover, when processing and using a photosensitive adhesive composition in the shape of a thin film, the surface becomes rough and there exists a tendency for adhesive force to fall.
上記フィラーの平均粒子径及び最大粒子径の測定方法としては、例えば、走査型電子顕微鏡(SEM)を用いて、200個程度のフィラーの粒径を測定する方法等が挙げられる。SEMを用いた測定方法としては、例えば、接着剤層を用いて半導体素子と半導体搭載用支持部材とを接着した後、加熱硬化(好ましくは150〜200℃で1〜10時間)させたサンプルを作製し、このサンプルの中心部分を切断して、その断面をSEMで観察する方法等が挙げられる。このとき、前述のフィラーの存在確率が全フィラーの80%以上であることが好ましい。 Examples of the method for measuring the average particle size and the maximum particle size of the filler include a method of measuring the particle size of about 200 fillers using a scanning electron microscope (SEM). As a measuring method using SEM, for example, a sample obtained by adhering a semiconductor element and a semiconductor mounting support member using an adhesive layer and then heat-curing (preferably at 150 to 200 ° C. for 1 to 10 hours) is used. The method of producing, cutting the center part of this sample, and observing the cross section by SEM etc. is mentioned. At this time, it is preferable that the existence probability of the filler is 80% or more of the total filler.
上記フィラーの使用量は、付与する特性、又は機能に応じて決められるが、樹脂成分とフィラーの合計に対して、通常1〜50質量%、好ましくは2〜40質量%、更に好ましくは5〜30質量%である。フィラーを増量させることにより、高弾性率化が図れ、ダイシング性(ダイサー刃による切断性)、ワイヤボンディング性(超音波効率)、熱時の接着強度を有効に向上できる。フィラーを必要以上に増量させると、熱圧着性が損なわれる傾向にあるため、フィラーの使用量は上記の範囲内に収めることが好ましい。求められる特性のバランスをとるべく、最適フィラー含量を決定する。フィラーを用いた場合の混合・混練は、通常の攪拌機、らいかい機、三本ロール、ボールミル等の分散機を適宜、組み合わせて行うことができる。 Although the usage-amount of the said filler is decided according to the characteristic to give or a function, it is 1-50 mass% normally with respect to the sum total of a resin component and a filler, Preferably it is 2-40 mass%, More preferably, it is 5-5. 30% by mass. By increasing the amount of filler, a high elastic modulus can be achieved, and dicing performance (cutability by a dicer blade), wire bonding performance (ultrasonic efficiency), and adhesive strength during heating can be effectively improved. If the amount of the filler is increased more than necessary, the thermocompression bonding property tends to be impaired. Therefore, the amount of the filler used is preferably within the above range. The optimal filler content is determined to balance the required properties. Mixing and kneading in the case of using a filler can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.
本発明の接着剤組成物には、異種材料間の界面結合を良くするために、各種カップリング剤を添加することもできる。カップリング剤としては、例えば、シラン系、チタン系、アルミニウム系等が挙げられ、中でも効果が高い点で、シラン系カップリング剤が好ましい。上記カップリング剤の使用量は、その効果や耐熱性及びコストの面から、使用する(A)マレイミド基を有するマレイミドモノマーに由来するモノマー単位及び単官能ビニルモノマーに由来するモノマー単位を含む共重合体であるアルカリ可溶性ポリマー100質量部に対して、0.01〜20質量部とするのが好ましい。 Various coupling agents can be added to the adhesive composition of the present invention in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and among them, a silane-based coupling agent is preferable because it is highly effective. The amount of the coupling agent used is a co-polymer containing a monomer unit derived from a maleimide monomer having (A) a maleimide group and a monomer unit derived from a monofunctional vinyl monomer, in terms of its effect, heat resistance and cost. It is preferable to set it as 0.01-20 mass parts with respect to 100 mass parts of alkali-soluble polymers which are coalescence.
本発明の接着剤組成物には、イオン性不純物を吸着して、吸湿時の絶縁信頼性を良くするために、更にイオン捕捉剤を添加することもできる。このようなイオン捕捉剤としては特に制限はなく、例えば、トリアジンチオール化合物、ビスフェノール系還元剤等の銅がイオン化して溶け出すのを防止するため銅害防止剤として知られる化合物、ジルコニウム系、アンチモンビスマス系マグネシウムアルミニウム化合物等の無機イオン吸着剤などが挙げられる。上記イオン捕捉剤の使用量は、添加による効果や耐熱性、コスト等の点から、(A)マレイミド基を有するマレイミドモノマーに由来するモノマー単位及び単官能ビニルモノマーに由来するモノマー単位を含む共重合体であるアルカリ可溶性ポリマー100質量部に対して、0.01〜10質量部が好ましい。 In the adhesive composition of the present invention, an ion scavenger may be further added in order to adsorb ionic impurities and improve insulation reliability at the time of moisture absorption. There are no particular restrictions on such ion scavengers, for example, triazine thiol compounds, bisphenol reducing agents, etc., compounds known as copper damage inhibitors to prevent ionization and dissolution, zirconium-based, antimony, etc. Examples thereof include inorganic ion adsorbents such as bismuth-based magnesium aluminum compounds. The amount of the ion scavenger used is a co-polymer containing a monomer unit derived from a maleimide monomer having a maleimide group and a monomer unit derived from a monofunctional vinyl monomer from the viewpoint of the effect of addition, heat resistance, cost, etc. 0.01-10 mass parts is preferable with respect to 100 mass parts of alkali-soluble polymers which are coalescence.
以下に、本発明を実施例に基づいて具体的に説明するが、本発明はこれに限定されるものではない。 Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.
(実施例1〜4及び比較例1〜3)
下記のポリマー(A〜G)をそれぞれ用い、下記表1の配合表に示す通り、フィルム塗工ワニスを調合した。
(Examples 1-4 and Comparative Examples 1-3)
Each of the following polymers (A to G) was used, and a film coating varnish was prepared as shown in the formulation table of Table 1 below.
(ポリマーAの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−(4−ヒドロキシフェニル)マレイミド(分子量189)18.9g、及び、単官能ビニルモノマーとしてn−ブチルアクリレート(分子量128)25.6gを、ジメチルホルムアミド(以下「DMF」と略す)178gに均一に溶解させた。フラスコ内の溶液に2,2’−アゾビスイソブチロニトリル(分子量164、以下「AIBN」と略す)0.74gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーA」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算でMw=27000であった。また、得られたポリマーのTgは74℃であった。
(Synthesis of polymer A)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser, and a nitrogen displacement device, 18.9 g of N- (4-hydroxyphenyl) maleimide (molecular weight 189) as a maleimide monomer and as a monofunctional vinyl monomer 25.6 g of n-butyl acrylate (molecular weight 128) was uniformly dissolved in 178 g of dimethylformamide (hereinafter abbreviated as “DMF”). To the solution in the flask, 0.74 g of 2,2′-azobisisobutyronitrile (molecular weight 164, hereinafter abbreviated as “AIBN”) was added little by little at room temperature (25 ° C.). After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The obtained precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer A”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 27000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 74 degreeC.
(ポリマーBの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとして4−マレイミド安息香酸(分子量217)13.0g、N−フェニルマレイミド(分子量173)6.9g、及び、単官能ビニルモノマーとしてn−ブチルアクリレート32.0gを、DMF204gに均一に溶解させた。フラスコ内の溶液にAIBN0.86gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーB」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算でMw=33000であった。また、得られたポリマーのTgは60℃であった。
(Synthesis of polymer B)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube, and a nitrogen displacement device, 13.0 g of 4-maleimidobenzoic acid (molecular weight 217) as a maleimide monomer, 6.9 g of N-phenylmaleimide (molecular weight 173) In addition, 32.0 g of n-butyl acrylate as a monofunctional vinyl monomer was uniformly dissolved in 204 g of DMF. AIBN 0.86g was added little by little at room temperature (25 degreeC) to the solution in a flask. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer B”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 33000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 60 degreeC.
(ポリマーCの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−シクロヘキシルマレイミド(分子量179)17.9g、単官能ビニルモノマーとしてn−ブチルアクリレート25.6g及びアクリル酸(分子量72)3.6gを、DMF188gに均一に溶解させた。フラスコ内の溶液にAIBN0.86gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーC」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=35000であった。また、得られたポリマーのTgは44℃であった。
(Synthesis of polymer C)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser, and a nitrogen displacement device, 17.9 g of N-cyclohexylmaleimide (molecular weight 179) as a maleimide monomer and 25.6 g of n-butyl acrylate as a monofunctional vinyl monomer Then, 3.6 g of acrylic acid (molecular weight 72) was uniformly dissolved in 188 g of DMF. AIBN 0.86g was added little by little at room temperature (25 degreeC) to the solution in a flask. After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer C”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 35000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 44 degreeC.
(ポリマーDの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−シクロヘキシルマレイミド18.8g、単官能ビニルモノマーとしてn−ブチルアクリレート19.2g及びアクリル酸5.4gをDMF174gに均一に溶解させた。フラスコ内の溶液にAIBN0.81gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーD」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=29000であった。また、得られたポリマーのTgは68℃であった。
(Synthesis of polymer D)
In a 500 ml separable flask equipped with a stirrer, thermometer, condenser, and nitrogen displacement apparatus, 18.8 g of N-cyclohexylmaleimide as maleimide monomer, 19.2 g of n-butyl acrylate as monofunctional vinyl monomer and acrylic acid 5 .4 g was uniformly dissolved in 174 g of DMF. To the solution in the flask, 0.81 g of AIBN was added little by little at room temperature (25 ° C.). After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer D”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 29000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 68 degreeC.
(ポリマーEの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート19.2g、アクリル酸5.4g及びスチレン(分子量104)23.4gをDMF192gに均一に溶解させた。フラスコ内の溶液にAIBN1.11gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーE」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=42000であった。また、得られたポリマーのTgは52℃であった。
(Synthesis of polymer E)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser, and a nitrogen displacement device, 19.2 g of n-butyl acrylate, 5.4 g of acrylic acid and 23.4 g of styrene (molecular weight 104) as a monofunctional vinyl monomer. Was uniformly dissolved in 192 g of DMF. 1.11 g of AIBN was added to the solution in the flask little by little at room temperature (25 ° C.). After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The resulting precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer E”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 42000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 52 degreeC.
(ポリマーFの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート12.8g、アクリル酸5.8g、スチレン20.8g及びシクロヘキシルアクリレート(分子量154)15.4gをDMF234gに均一に溶解させた。フラスコ内の溶液にAIBN1.18gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーF」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=37000であった。また、得られたポリマーのTgは55℃であった。
(Synthesis of polymer F)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser tube, and a nitrogen displacement device, 12.8 g of n-butyl acrylate, 5.8 g of acrylic acid, 20.8 g of styrene, and cyclohexyl acrylate ( 15.4 g of molecular weight 154) was uniformly dissolved in 234 g of DMF. 1.18 g of AIBN was added to the solution in the flask little by little at room temperature (25 ° C.). After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The obtained precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer F”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 37000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 55 degreeC.
(ポリマーGの合成)
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート12.8g、アクリル酸21.6g及びシクロヘキシルアクリレート15.4gをDMF215gに均一に溶解させた。フラスコ内の溶液にAIBN1.24gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーG」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=39000であった。また、得られたポリマーのTgは66℃であった。
(Synthesis of polymer G)
In a 500 ml separable flask equipped with a stirrer, a thermometer, a condenser, and a nitrogen displacement device, 12.8 g of n-butyl acrylate, 21.6 g of acrylic acid, and 15.4 g of cyclohexyl acrylate were added to 215 g of DMF as a monofunctional vinyl monomer. It was dissolved uniformly. To the solution in the flask, 1.24 g of AIBN was added little by little at room temperature (25 ° C.). After completion of the addition, a reflux condenser was attached to the flask, and the mixture was stirred at room temperature (25 ° C.) for 30 minutes while blowing nitrogen gas. Next, the temperature of the flask was raised to 70 ° C. and stirring was continued for 6 hours. The solution thus obtained was cooled to room temperature (25 ° C.), and then poured into distilled water to cause reprecipitation. The obtained precipitate was dried with a vacuum dryer to obtain a polymer (hereinafter referred to as “polymer G”). When the weight average molecular weight of the obtained polymer was measured, it was Mw = 39000 in terms of polystyrene. Moreover, Tg of the obtained polymer was 66 degreeC.
表1において、種々の記号は下記のものを意味する。
BPE−100:新中村化学、エトキシ化ビスフェノールAジメタクリレート
U−2PPA:新中村化学、ウレタンアクリレート
I−819:チバ・スペシャルティ・ケミカルズ、ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキサイド
VG3101:プリンテック、3官能エポキシ樹脂
BEO−60E:新日本理化、ビスフェノールAビス(トリエチレングリコールグリシジルエーテル)エーテル
TrisP−PA:本州化学、トリスフェノール化合物(α,α,α’−トリス(4−ヒドロキシフェノル)−1−エチル−4−イソプロピルベンゼン)
R972:日本アエロジル、疎水性フュームドシリカ(平均粒径:約16nm)
NMP:関東化学、N−メチル−2−ピロリジノン
In Table 1, various symbols mean the following.
BPE-100: Shin-Nakamura Chemical, ethoxylated bisphenol A dimethacrylate U-2PPA: Shin-Nakamura Chemical, urethane acrylate I-819: Ciba Specialty Chemicals, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide VG3101 : Printec, trifunctional epoxy resin BEO-60E: Shin Nippon Rika, bisphenol A bis (triethylene glycol glycidyl ether) ether TrisP-PA: Honshu Chemical, trisphenol compound (α, α, α'-tris (4-hydroxy) Phenols) -1-ethyl-4-isopropylbenzene)
R972: Nippon Aerosil, hydrophobic fumed silica (average particle size: about 16 nm)
NMP: Kanto Chemical, N-methyl-2-pyrrolidinone
これらワニスを40μmの厚さに、それぞれ基材フィルム(剥離剤処理PETフィルム)上に塗布し、オーブン中で80℃30分、続いて、120℃30分、それぞれ加熱し、実施例1〜4及び比較例1〜3の基材フィルム上に接着剤層が形成された基材フィルム付きの接着シートを得た。 Each of these varnishes was applied to a substrate film (peeling agent-treated PET film) to a thickness of 40 μm, and heated in an oven at 80 ° C. for 30 minutes, followed by 120 ° C. for 30 minutes. And the adhesive sheet with a base film in which the adhesive bond layer was formed on the base film of Comparative Examples 1-3 was obtained.
実施例1〜4及び比較例1〜3の接着シートについて、以下の特性評価を行い、結果を表2に示した。 About the adhesive sheet of Examples 1-4 and Comparative Examples 1-3, the following characteristic evaluation was performed and the result was shown in Table 2.
低温貼付け性
支持台上に載せたシリコンウェハ(6inch径、厚さ400μm)に、実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートをロール(温度100℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。続いて基材フィルムを剥がし、接着剤層上に、厚み80μm、幅10mm、長さ40mmのポリイミドフィルム「ユーピレックス」(商品名)を上記と同様の条件でロールにより加圧して積層した。このようにして準備したサンプルについて、レオメータ「ストログラフE−S」(商品名)を用いて、室温(25℃)で90°ピール試験を行って、接着フィルム−ユーピレックス間のピール強度を測定した。ピール強度が2N/cm以上のサンプルを「A」、2N/cm未満のサンプルを「C」とした。
Low temperature sticking property Adhesive sheets with base films of Examples 1 to 4 and Comparative Examples 1 to 3 are rolled onto a silicon wafer (6 inch diameter, thickness 400 μm) placed on a support base (
パターン形成性
実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に100℃でロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。その上にネガ型パターン用マスク(日立化成製:No.G−2)を載せ、そして、高精度平行露光機(オーク製作所製:EXM−1172−B−∞)で500mJ/cm2で露光した後、80℃のホットプレート上で約30秒放置した。その後、基材フィルムを取り除き、コンベア現像機(ヤコー製)でスプレー現像した。現像液としてはテトラメチルアンモニウムハイドライド(TMAH)2.38質量%、28℃を用い、スプレー圧は0.18MPaであった。水洗には純水、23℃を用い、スプレー圧は0.02MPaであった。現像後、パターン形成(ライン/スペース:200μm/400μm)されているか確認し、パターン形成されていた場合を「A」、パターンは開口されているものの露光部も膨潤又は溶解した場合を「B」、現像とともに接着剤層がシリコンウェハからはく離した場合を「C」とした。
Pattern Formability The adhesive sheets with base film of Examples 1 to 4 and Comparative Examples 1 to 3 were pressed on a silicon wafer (6 inch diameter, thickness 400 μm) with a roll at 100 ° C. (linear pressure 4 kgf / cm And a feed rate of 0.5 m / min). A negative pattern mask (manufactured by Hitachi Chemical Co., Ltd .: No. G-2) was placed thereon, and exposed at 500 mJ / cm 2 with a high-precision parallel exposure machine (manufactured by Oak Manufacturing Co., Ltd .: EXM-1172-B-∞). Then, it was left on an 80 ° C. hot plate for about 30 seconds. Thereafter, the base film was removed and spray developed with a conveyor developing machine (manufactured by Yako). The developer used was 2.38% by mass of tetramethylammonium hydride (TMAH) at 28 ° C., and the spray pressure was 0.18 MPa. Pure water and 23 ° C. were used for washing with water, and the spray pressure was 0.02 MPa. After development, it is confirmed whether pattern formation (line / space: 200 μm / 400 μm) is performed, and “A” indicates that the pattern is formed, and “B” indicates that the exposed portion of the pattern is open but also swells or dissolves. The case where the adhesive layer peeled off from the silicon wafer with development was designated as “C”.
260℃ピール強度
シリコンウェハ(6インチ径、厚さ400μm)を、5mm×5mmの大きさで深さ180μmまでハーフカットした。その後、実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートを、ハーフカット処理したシリコンウェハ上に100℃でロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。続いて、これらのサンプルを高精度平行露光機(オーク製作所製:EXM−1172−B−∞)で500mJ/cm2で露光した後、80℃のホットプレート上で約30秒放置した。その後、基材フィルムを除去し、各サンプルを5mm×5mmに個片化した。
260 ° C. Peel Strength A silicon wafer (6 inch diameter, 400 μm thickness) was half cut to a size of 5 mm × 5 mm to a depth of 180 μm. Thereafter, the adhesive sheets with base films of Examples 1 to 4 and Comparative Examples 1 to 3 were pressed on a half-cut silicon wafer with a roll at 100 ° C. (linear pressure 4 kgf / cm, feed rate 0.5 m). / Min). Subsequently, these samples were exposed at 500 mJ / cm 2 with a high-precision parallel exposure machine (manufactured by Oak Manufacturing Co., Ltd .: EXM-1172-B-∞), and then left on a hot plate at 80 ° C. for about 30 seconds. Thereafter, the base film was removed, and each sample was separated into 5 mm × 5 mm pieces.
個片化した接着剤層付シリコンウェハを、接着シート側を下にしてガラス基板(10mm×10mm×0.55mm)に載せ、2kgfで加圧しながら、120℃で10秒間圧着した。これらの試験片をオーブン中で170℃、3時間の条件で加熱硬化した後、260℃の熱盤上で10秒加熱した後、図13に示す接着力評価装置を用いて、測定速度:0.5mm/秒の条件でシリコンチップの引き剥がし強度を測定し、このときの値を吸湿前のピール強度とした。また、加熱硬化したサンプルを85℃/60%RHの恒温恒湿槽に48時間放置した後、前記と同様にピール強度を測定し、吸湿後のピール強度とした。 The separated silicon wafer with an adhesive layer was placed on a glass substrate (10 mm × 10 mm × 0.55 mm) with the adhesive sheet side down, and was pressure-bonded at 120 ° C. for 10 seconds while being pressurized with 2 kgf. These test pieces were heated and cured in an oven at 170 ° C. for 3 hours, then heated on a hot plate at 260 ° C. for 10 seconds, and then measured using an adhesive force evaluation apparatus shown in FIG. The peel strength of the silicon chip was measured under the condition of 0.5 mm / second, and the value at this time was defined as the peel strength before moisture absorption. Moreover, after leaving the heat-cured sample in a constant temperature and humidity chamber of 85 ° C./60% RH for 48 hours, the peel strength was measured in the same manner as described above to obtain the peel strength after moisture absorption.
表2に示した結果から明らかなように、実施例1〜4の接着シートは、比較例1〜3の接着シートと比較して、低温貼付け性及びパターン形成性に優れ、260℃ピール強度が高いことが確認された。 As is clear from the results shown in Table 2, the adhesive sheets of Examples 1 to 4 are excellent in low-temperature sticking property and pattern formability as compared with the adhesive sheets of Comparative Examples 1 to 3, and have a 260 ° C. peel strength. It was confirmed to be high.
1…接着剤層、1a,1b…接着剤パターン、2…カバーフィルム、3…基材フィルム(基材)、6…粘着剤層、7…基材フィルム(基材)、8…半導体ウェハ、12,12a,12b…半導体素子、13…半導体素子搭載用支持部材、14…ワイヤ、15…封止材、16…端子、20,20a,20b…接着剤層付半導体ウェハ、100,110,120,130…接着シート、200,210…半導体装置、31…プッシュプルゲージ、32…取っ手、33…支点、34…シリコンウェハ、35…ガラス基板、36…熱盤、300…ピール強度測定装置。
DESCRIPTION OF
Claims (10)
(B)熱硬化性樹脂と、
(C)放射線重合性化合物と、
(D)光開始剤と、
を含有し、
前記マレイミドモノマーが、フェノール性水酸基を有する化合物を含む、
半導体素子用感光性接着剤組成物。 (A) an alkali-soluble polymer that is a copolymer including a monomer unit derived from a maleimide monomer having a maleimide group and a monomer unit derived from a monofunctional vinyl monomer;
(B) a thermosetting resin;
(C) a radiation polymerizable compound;
(D) a photoinitiator;
Contain,
The maleimide monomer includes a compound having a phenolic hydroxyl group,
Photosensitive adhesive composition for semiconductor elements.
前記接着剤パターンを介して半導体素子とこれが搭載される支持部材とを接着する工程と、
を備える半導体装置の製造方法。
An adhesive pattern is formed by exposing an adhesive layer comprising the photosensitive adhesive composition according to any one of claims 1 to 4 and developing the exposed adhesive layer using an alkaline developer. Forming, and
Bonding the semiconductor element and the support member on which the semiconductor element is mounted via the adhesive pattern;
A method for manufacturing a semiconductor device comprising:
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JP2011246627A (en) * | 2010-05-27 | 2011-12-08 | Hitachi Chem Co Ltd | Photosensitive adhesive sheet and method for forming patterned adhesive film |
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US8507363B2 (en) * | 2011-06-15 | 2013-08-13 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using water-soluble die attach film |
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JP6234864B2 (en) * | 2014-03-28 | 2017-11-22 | 富士フイルム株式会社 | Photosensitive resin composition, laminate, semiconductor device manufacturing method, semiconductor device |
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