JP5473397B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5473397B2
JP5473397B2 JP2009117333A JP2009117333A JP5473397B2 JP 5473397 B2 JP5473397 B2 JP 5473397B2 JP 2009117333 A JP2009117333 A JP 2009117333A JP 2009117333 A JP2009117333 A JP 2009117333A JP 5473397 B2 JP5473397 B2 JP 5473397B2
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region
ion implantation
type
conductivity type
drift layer
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JP2009117333A
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English (en)
Japanese (ja)
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JP2010267762A (ja
JP2010267762A5 (ko
Inventor
健一 大塚
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2009117333A priority Critical patent/JP5473397B2/ja
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Publication of JP2010267762A5 publication Critical patent/JP2010267762A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009117333A 2009-05-14 2009-05-14 半導体装置およびその製造方法 Active JP5473397B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Publications (3)

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JP2010267762A JP2010267762A (ja) 2010-11-25
JP2010267762A5 JP2010267762A5 (ko) 2011-12-22
JP5473397B2 true JP5473397B2 (ja) 2014-04-16

Family

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Family Applications (1)

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JP2009117333A Active JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

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JP (1) JP5473397B2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013161420A1 (ja) * 2012-04-24 2013-10-31 富士電機株式会社 縦型高耐圧半導体装置およびその製造方法
WO2016084141A1 (ja) * 2014-11-26 2016-06-02 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法
JP6479615B2 (ja) 2015-09-14 2019-03-06 株式会社東芝 半導体装置の製造方法
JP2017063079A (ja) * 2015-09-24 2017-03-30 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2017081935A1 (ja) 2015-11-12 2017-05-18 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6454447B2 (ja) 2015-12-02 2019-01-16 アーベーベー・シュバイツ・アーゲー 半導体装置の製造方法
JP7081087B2 (ja) * 2017-06-02 2022-06-07 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
JP6592119B2 (ja) * 2018-01-25 2019-10-16 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2007019146A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体素子
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2009302436A (ja) * 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法
JP5405089B2 (ja) * 2008-11-20 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法
CN108604552B (zh) * 2015-12-02 2022-03-22 日立能源瑞士股份公司 半导体装置以及用于制造这种半导体装置的方法

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