JP5473397B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5473397B2
JP5473397B2 JP2009117333A JP2009117333A JP5473397B2 JP 5473397 B2 JP5473397 B2 JP 5473397B2 JP 2009117333 A JP2009117333 A JP 2009117333A JP 2009117333 A JP2009117333 A JP 2009117333A JP 5473397 B2 JP5473397 B2 JP 5473397B2
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region
ion implantation
type
conductivity type
drift layer
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Japanese (ja)
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JP2010267762A5 (https=
JP2010267762A (ja
Inventor
健一 大塚
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of JP2010267762A5 publication Critical patent/JP2010267762A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009117333A 2009-05-14 2009-05-14 半導体装置およびその製造方法 Active JP5473397B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Publications (3)

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JP2010267762A JP2010267762A (ja) 2010-11-25
JP2010267762A5 JP2010267762A5 (https=) 2011-12-22
JP5473397B2 true JP5473397B2 (ja) 2014-04-16

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JP (1) JP5473397B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362392B2 (en) 2012-04-24 2016-06-07 Fuji Electric Co., Ltd. Vertical high-voltage semiconductor device and fabrication method thereof
WO2016084141A1 (ja) * 2014-11-26 2016-06-02 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法
JP6479615B2 (ja) 2015-09-14 2019-03-06 株式会社東芝 半導体装置の製造方法
JP2017063079A (ja) * 2015-09-24 2017-03-30 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
DE112016005210T5 (de) 2015-11-12 2018-09-27 Mitsubishi Electric Corporation Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung
JP6454447B2 (ja) 2015-12-02 2019-01-16 アーベーベー・シュバイツ・アーゲー 半導体装置の製造方法
JP7081087B2 (ja) * 2017-06-02 2022-06-07 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
JP6592119B2 (ja) * 2018-01-25 2019-10-16 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2007019146A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体素子
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2009302436A (ja) * 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法
JP5405089B2 (ja) * 2008-11-20 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法
CN108604552B (zh) * 2015-12-02 2022-03-22 日立能源瑞士股份公司 半导体装置以及用于制造这种半导体装置的方法

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