JP5468286B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP5468286B2 JP5468286B2 JP2009093373A JP2009093373A JP5468286B2 JP 5468286 B2 JP5468286 B2 JP 5468286B2 JP 2009093373 A JP2009093373 A JP 2009093373A JP 2009093373 A JP2009093373 A JP 2009093373A JP 5468286 B2 JP5468286 B2 JP 5468286B2
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- 239000004065 semiconductor Substances 0.000 title claims description 165
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 94
- 229910002601 GaN Inorganic materials 0.000 claims description 49
- 150000001875 compounds Chemical class 0.000 claims description 36
- 150000004767 nitrides Chemical class 0.000 claims description 36
- -1 nitride compound Chemical class 0.000 claims description 29
- 229910000679 solder Inorganic materials 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000005669 field effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
(素子構造)
本発明の第1の実施の形態に係る半導体装置の模式的平面パターン構成は、図1に示すように表される。また、図1のIII−III線に沿う模式的断面構造は、図2に示すように表される。
第1の実施の形態に係る半導体装置は、図3に示すように、基板10と、基板10上に配置されたGaNエピタキシャル成長層12と、GaNエピタキシャル成長層12上に配置されたアルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18と、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18上に配置されたソース電極20,ゲート電極24およびドレイン電極22とを備える。GaNエピタキシャル成長層12上のアルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18との界面には、2DEG層16が形成されている。図4に示す半導体装置では、高電子移動度トランジスタ(HEMT:High Electron Mobility Transistor)が構成されている。
第1の実施の形態に係る半導体装置の別の構成例は、図4に示すように、基板10と、基板10上に配置されたGaNエピタキシャル成長層12と、GaNエピタキシャル成長層12上に配置されたソース領域26およびドレイン領域28と、ソース領域26上に配置されたソース電極20,GaNエピタキシャル成長層12上に配置されたゲート電極24およびドレイン領域28上に配置されたドレイン電極22とを備える。
第1の実施の形態に係る半導体装置の更に別の構成例は、図5に示すように、基板10と、基板10上に配置されたGaNエピタキシャル成長層12と、GaNエピタキシャル成長層12上に配置されたアルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18と、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18上に配置されたソース電極20およびドレイン電極22と、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18上のリセス部に配置されたゲート電極24と、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18とを備える。GaNエピタキシャル成長層12上のアルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18との界面には、2DEG層16が形成されている。図5に示す半導体装置は、リセスゲート構造を有するHEMTに相当している。
第1の実施の形態に係る半導体装置の製造方法は、基板10上に窒化物系化合物半導体層12を形成する工程と、窒化物系化合物半導体層12上に、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)18からなる活性領域AAを形成する工程と、活性領域AA上にゲート電極24、ソース電極20およびドレイン電極22を形成する工程と、ゲート電極24、ソース電極20およびドレイン電極22が延伸する方向の窒化物系化合物半導体層12上に、それぞれゲート電極24、ソース電極20およびドレイン電極22に接続されたゲート端子電極GE1〜GE3、ソース端子電極SE1〜SE4およびドレイン端子電極DEを形成する工程と、ソース端子電極SE1〜SE4が配置される側の基板10の端面に、ソース端子電極SE1〜SE4と接続された端面電極SC1〜SC4を形成する工程と、端面電極SC1〜SC4上に、ダイボンディングで使用する半田層(14)がソース端子電極SE1〜SE4に到達するのを防止する突起電極34を形成する工程とを有する。
突起電極34を形成する方法は、図6に示すように、端面電極SC1〜SC4を形成する工程後、デバイス表面全面にレジスト層40を塗布する工程と、レジスト層40をパターニング後、電極層38および突起電極34を同時に形成する工程と、リフトオフ法を用いて、レジスト層40を除去する工程を有する。結果として、図2に示すように、突起電極34を形成することができる。
第2の実施の形態に係る半導体装置の模式的平面パターン構成は、図9に示すように表され、図9のV−V線に沿う模式的断面構造は、図10に示すように表される。
第3の実施の形態に係る半導体装置の模式的平面パターン構成は、図11に示すように表され、図11のVI−VI線に沿う模式的断面構造は、図12に示すように表される。また、図11のV−V線に沿う模式的断面構造は、図10と同様に表される。
第4の実施の形態に係る半導体装置の模式的平面パターン構成は、図13に示すように表される。また、図13のV−V線に沿う模式的断面構造は、図10と同様に表される。
第5の実施の形態に係る半導体装置の模式的断面構造は、図14に示すように表される。図14は、図1のIII−III線に沿う模式的断面構造に対応し、突起電極34の配置される位置が図2とは異なる。
第6の実施の形態に係る半導体装置の模式的断面構造は、図15に示すように表される。図15は、図1のIII−III線に沿う模式的断面構造に対応し、突起電極34の配置される位置が図2とは異なる。
上記のように、本発明は第1〜第6の実施の形態によって記載したが、この開示の一部をなす論述および図面は例示的なものであり、この発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例および運用技術が明らかとなろう。
12…窒化物系化合物半導体層(GaNエピタキシャル成長層)
14…半田層
16…2次元電子ガス(2DEG)層
18…アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)
20…ソース電極
22…ドレイン電極
24…ゲート電極
26…ソース領域
28…ドレイン領域
30…バリア金属層
32…接地用金属層
34…突起電極
38…電極層
40、42…レジスト層
SC,SC1,SC2,SC3,SC4…端面電極
AA…活性領域
SE1,SE2,SE3,SE4…ソース端子電極
GE1,GE2,GE3…ゲート端子電極
DE…ドレイン端子電極
BE…接地導体
Claims (20)
- 基板と、
前記基板上に配置された窒化物系化合物半導体層と、
前記窒化物系化合物半導体層上に配置され、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)からなる活性領域と、
前記活性領域上に配置されたゲート電極、ソース電極およびドレイン電極と、
前記ゲート電極、前記ソース電極および前記ドレイン電極が延伸する方向の前記窒化物系化合物半導体層上に配置され、それぞれ前記ゲート電極、前記ソース電極および前記ドレイン電極に接続されたゲート端子電極、ソース端子電極およびドレイン端子電極と、
前記ソース端子電極が配置される側の前記基板の端面に、前記ソース端子電極の表面の少なくとも一部を覆うように配置され、前記ソース端子電極と接続された端面電極と、
前記端面電極上に配置され、ダイボンディングで使用する半田層が前記ソース端子電極に到達するのを防止する突起電極と、
前記基板の裏面に配置され、前記端面電極と接続された接地導体と
を備えることを特徴とする半導体装置。 - 基板と、
前記基板上に配置された窒化物系化合物半導体層と、
前記窒化物系化合物半導体層上に配置され、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)からなる活性領域と、
前記活性領域上に配置され、それぞれ複数のフィンガーを有するゲート電極、ソース電極およびドレイン電極と、
前記ゲート電極、前記ソース電極および前記ドレイン電極が延伸する方向の前記窒化物系化合物半導体層上に配置され、前記ゲート電極、前記ソース電極および前記ドレイン電極ごとに複数のフィンガーをそれぞれ束ねて形成したゲート端子電極、ソース端子電極およびドレイン端子電極と、
前記ソース端子電極が配置される側の前記基板の端面に、前記ソース端子電極の表面の少なくとも一部を覆うように配置され、前記ソース端子電極と接続された端面電極と、
前記端面電極上に配置され、ダイボンディングで使用する半田層が前記ソース端子電極に到達するのを防止する突起電極と、
前記基板の裏面に配置され、前記端面電極と接続された接地導体と
を備えることを特徴とする半導体装置。 - 前記端面電極は、前記ソース端子電極上に延在して形成され、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上に配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記端面電極は、前記ソース端子電極上に延在して形成され、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上、前記ソース端子電極との境界に配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記端面電極は、前記窒化物系化合物半導体層上に延在して形成され、前記突起電極は、前記窒化物系化合物半導体層上に延在して形成された前記端面電極上に配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記端面電極は、前記窒化物系化合物半導体層上に延在し、かつ複数の前記ソース端子電極に対して共通に形成され、前記突起電極は、前記窒化物系化合物半導体層上に形成された前記端面電極上にストライプ状に配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記端面電極は、前記ソース端子電極上に延在して形成され領域と、前記窒化物系化合物半導体層上に延在し、かつ複数の前記ソース端子電極に対して共通に形成された領域とを備え、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上、前記ソース端子電極との境界および前記窒化物系化合物半導体層上に形成された前記端面電極上に連結して配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記突起電極は、前記基板の側面に配置された前記端面電極上に配置されることを特徴とする請求項1または2に記載の半導体装置。
- 前記端面電極は、バリア金属層と、前記バリア金属層上に配置された接地用金属層を備えることを特徴とする請求項1〜8のいずれか1項に記載の半導体装置。
- 前記バリア金属層はTi層若しくはTi/Pt層からなり、前記接地用金属層は、Au層からなることを特徴とする請求項9に記載の半導体装置。
- 前記基板は、SiC基板、GaAs基板、GaN基板、SiC基板上にGaNエピタキシャル層を形成した基板、Si基板上にGaNエピタキシャル層を形成した基板、SiC基板上にGaN/AlGaNからなるヘテロ接合エピタキシャル層を形成した基板、サファイア基板上にGaNエピタキシャル層を形成した基板、サファイア基板若しくはダイヤモンド基板のいずれかを備えることを特徴とする請求項1〜10のいずれか1項に記載の半導体装置。
- 基板上に窒化物系化合物半導体層を形成する工程と、
前記窒化物系化合物半導体層上に、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)からなる活性領域を形成する工程と、
前記活性領域上にゲート電極、ソース電極およびドレイン電極を形成する工程と、
前記ゲート電極、前記ソース電極および前記ドレイン電極が延伸する方向の前記窒化物系化合物半導体層上に、それぞれ前記ゲート電極、前記ソース電極および前記ドレイン電極に接続されたゲート端子電極、ソース端子電極およびドレイン端子電極を形成する工程と、
前記ソース端子電極が配置される側の前記基板の端面に、前記ソース端子電極の表面の少なくとも一部を覆うように、前記ソース端子電極と接続された端面電極を形成する工程と、
前記端面電極上に、ダイボンディングで使用する半田層が前記ソース端子電極に到達するのを防止する突起電極を形成する工程と、
前記基板の裏面に、前記端面電極と接続された接地導体を形成する工程と
を有することを特徴とする半導体装置の製造方法。 - 基板上に配置された窒化物系化合物半導体層を形成する工程と、
前記窒化物系化合物半導体層上に、アルミニウム窒化ガリウム層(AlxGa1-xN)(0.1≦x≦1)からなる活性領域を形成する工程と、
前記活性領域上に、それぞれ複数のフィンガーを有するゲート電極、ソース電極およびドレイン電極を形成する工程と、
前記ゲート電極、前記ソース電極および前記ドレイン電極が延伸する方向の前記窒化物系化合物半導体層上に、前記ゲート電極、前記ソース電極および前記ドレイン電極ごとに複数のフィンガーをそれぞれ束ねて形成したゲート端子電極、ソース端子電極およびドレイン端子電極を形成する工程と、
前記ソース端子電極が形成される側の前記基板の端面に、前記ソース端子電極の表面の少なくとも一部を覆うように、前記ソース端子電極と接続された端面電極を形成する工程と、
前記端面電極上に、ダイボンディングで使用する半田層が前記ソース端子電極に到達するのを防止する突起電極を形成する工程と、
前記基板の裏面に、前記端面電極と接続された接地導体を形成する工程と
を有することを特徴とする半導体装置の製造方法。 - 前記突起電極を形成する工程は、リフトオフ法を用いることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記突起電極を形成する工程は、斜め蒸着法を用いることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記端面電極を形成する工程において、前記端面電極は、前記ソース端子電極上に延在して形成され、前記突起電極を形成する工程において、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上に形成されることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記端面電極を形成する工程において、前記端面電極は、前記ソース端子電極上に延在して形成され、前記突起電極を形成する工程において、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上、前記ソース端子電極との境界に形成されることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記端面電極を形成する工程において、前記端面電極は、前記窒化物系化合物半導体層上に延在して形成され、前記突起電極を形成する工程において、前記突起電極は、前記窒化物系化合物半導体層上に延在して形成された前記端面電極上に形成されることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記端面電極を形成する工程において、前記端面電極は、前記窒化物系化合物半導体層上に延在し、かつ複数の前記ソース端子電極に対して共通に形成され、前記突起電極を形成する工程において、前記突起電極は、前記窒化物系化合物半導体層上に形成された前記端面電極上にストライプ状に形成されることを特徴とする請求項12または13に記載の半導体装置の製造方法。
- 前記端面電極を形成する工程において、前記端面電極は、前記ソース端子電極上に延在して形成され、また前記窒化物系化合物半導体層上に延在し、かつ複数の前記ソース端子電極に対して共通に形成され、前記突起電極を形成する工程において、前記突起電極は、前記ソース端子電極上に延在して形成された前記端面電極上、前記ソース端子電極との境界および前記窒化物系化合物半導体層上に形成された前記端面電極上に連結して形成されることを特徴とする請求項12または13に記載の半導体装置の製造方法。
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US12/716,693 US20100252863A1 (en) | 2009-04-07 | 2010-03-03 | Semiconductor device and manufacturing method for the same |
US13/953,363 US20130313563A1 (en) | 2009-04-07 | 2013-07-29 | Semiconductor device and manufacturing method for the same |
US14/209,811 US20140209924A1 (en) | 2009-04-07 | 2014-03-13 | Semiconductor device and manufacturing method for the same |
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US20130175542A1 (en) * | 2011-04-11 | 2013-07-11 | International Rectifier Corporation | Group III-V and Group IV Composite Diode |
US9166009B2 (en) * | 2011-04-25 | 2015-10-20 | Renesas Electronics Corporation | Semiconductor apparatus and method for making semiconductor apparatus |
US9379231B2 (en) * | 2012-02-17 | 2016-06-28 | Infineon Technologies Americas Corp. | Transistor having increased breakdown voltage |
US9070755B2 (en) | 2012-02-17 | 2015-06-30 | International Rectifier Corporation | Transistor having elevated drain finger termination |
JP6054620B2 (ja) * | 2012-03-29 | 2016-12-27 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
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JP6299665B2 (ja) * | 2015-04-30 | 2018-03-28 | 三菱電機株式会社 | 電界効果トランジスタ |
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US10529802B2 (en) * | 2017-09-14 | 2020-01-07 | Gan Systems Inc. | Scalable circuit-under-pad device topologies for lateral GaN power transistors |
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