JP5461521B2 - リソグラフィ装置、容器、および汚染物質モニタリング方法 - Google Patents
リソグラフィ装置、容器、および汚染物質モニタリング方法 Download PDFInfo
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- JP5461521B2 JP5461521B2 JP2011502879A JP2011502879A JP5461521B2 JP 5461521 B2 JP5461521 B2 JP 5461521B2 JP 2011502879 A JP2011502879 A JP 2011502879A JP 2011502879 A JP2011502879 A JP 2011502879A JP 5461521 B2 JP5461521 B2 JP 5461521B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
[0001] 本願は、2008年4月1日に出願した米国仮出願第61/064,889号の優先権を主張し、その全体を本願に参考として組み込む。
によって与えられる。ここでは、θt(反射角)はスネル(Snell)の法則によってθi(入射角)から導き出すことができる。
Claims (14)
- 汚染物質の制御のためにプロービングされるテスト面を有するコンポーネントを収容する容器と、
光プロービングビームを送りかつ受け取る光プローブと、
を含み、
前記光プローブは、前記光プロービングビームを与える光源、前記テスト面での反射後に直線偏光状態を与える所定の偏光ベクトルを有するように前記光プロービングビームを調整する偏光コンディショナ、および、スペクトルアナライザを含み、
前記偏光コンディショナは、最小透過率波長に対して最小の透過率を与え、前記スペクトルアナライザは、汚染物質があることによる偏光変化に応じて前記最小透過率波長の波長シフトを検出する、リソグラフィ装置。 - 前記容器は、真空容器であり、前記コンポーネントは、投影ミラー光学部品または照明ミラー光学部品である、請求項1に記載のリソグラフィ装置。
- 前記容器は、単一の光ポートを含み、かつ、逆反射要素が前記光プロービングビームのビーム路内に配置され、前記逆反射要素は、反射された光プロービングビームを、前記単一の光ポートおよび前記単一の光ポートへと前記テスト面を介して誘導するように位置決めされる、請求項1または2に記載のリソグラフィ装置。
- 前記逆反射要素は、コリメータレンズ、マイクロレンズアレイ、およびミラーを含む、請求項3に記載のリソグラフィ装置。
- 前記テスト面は、前記光プロービングビームは前記コリメータレンズの後に平行となるように、前記コリメータレンズの焦点面内または焦点面付近に設けられる、請求項4に記載のリソグラフィ装置。
- 前記スペクトルアナライザは、前記受信した波長スペクトルにおける局所最小値を特定する最小値特定回路、および、局所最小値シフトを汚染レベルに関連付けるメモリが具備される、請求項1ないし5のいずれか一項に記載のリソグラフィ装置。
- 前記偏光コンディショナは、ポラライザおよびリターダを含む、請求項1ないし6のいずれか一項に記載のリソグラフィ装置。
- 前記偏光コンディショナは、前記光源からの光路内に、ポラライザおよびリターダと共に設けられ、かつ、前記テスト面からの光路内に、偏光フィルタが前記スペクトルアナライザの前に配置される、請求項1ないし7のいずれか一項に記載のリソグラフィ装置。
- 前記偏光コンディショナは、前記容器内に設けられる、請求項1ないし8のいずれか一項に記載のリソグラフィ装置。
- 物質堆積制御のためにプロービングされるテスト面を有するコンポーネントと、光プロービングビームを送りかつ受け取る光プローブとを収容する容器であって、
前記光プローブは、前記光プロービングビームを与える広帯域光源、前記テスト面での反射後に直線偏光状態を与える所定の偏光ベクトルを有するように前記光プロービングビームを調整する偏光コンディショナ、偏光フィルタ、および、スペクトルアナライザを含み、前記偏光コンディショナおよび偏光フィルタは、最小透過率波長に対してゼロの透過率を与え、前記スペクトルアナライザは、汚染物質があることによる偏光変化に応じて前記最小透過率波長の波長シフトを検出する、容器。 - 前記容器は、単一の光ポートを含み、前記容器は、前記光プロービングビームの前記ビーム路内に置かれる逆反射要素を含み、前記逆反射要素は、反射された光プロービングビームを、前記単一の光ポートからおよび前記単一の光ポートへと前記テスト面を介して誘導するように位置合わせされる、請求項10に記載の容器。
- 容器内に収容されたテスト面の汚染物質をモニタリングする汚染物質モニタリング方法であって、
前記容器内に光プロービングビームを送ることと、
前記テスト面での反射後に直線偏光状態を与える所定の偏光ベクトルを有するように前記光プロービングビームを調整することにより、最小透過率波長に対して最小透過率を与えることと、
前記容器からスペクトルアナライザ内への反射された光プロービングビームを受け取ることと、
前記スペクトルアナライザを用いて、汚染物質があることによる偏光変化に応じて前記最小透過率波長の波長シフトを検出することと、
を含む方法。 - 前記容器は、単一の光ポートを含む真空容器であり、前記方法は、前記反射された光プロービングビームを、前記光ポートからおよび前記光ポートへと前記テスト面を介して誘導するように前記光プロービングビームを逆反射させることを含む、請求項12に記載の汚染物質モニタリング方法。
- 前記光プロービングビームは、広帯域光ビームである、請求項12に記載の汚染物質モニタリング方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6488908P | 2008-04-01 | 2008-04-01 | |
US61/064,889 | 2008-04-01 | ||
PCT/NL2009/050151 WO2009123446A1 (en) | 2008-04-01 | 2009-03-27 | Lithographic apparatus and contamination detection method |
Publications (2)
Publication Number | Publication Date |
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JP2011519475A JP2011519475A (ja) | 2011-07-07 |
JP5461521B2 true JP5461521B2 (ja) | 2014-04-02 |
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JP2011502879A Expired - Fee Related JP5461521B2 (ja) | 2008-04-01 | 2009-03-27 | リソグラフィ装置、容器、および汚染物質モニタリング方法 |
Country Status (7)
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US (1) | US8547551B2 (ja) |
JP (1) | JP5461521B2 (ja) |
KR (1) | KR20100133457A (ja) |
CN (1) | CN101981504B (ja) |
NL (1) | NL1036682A1 (ja) |
TW (1) | TW200947144A (ja) |
WO (1) | WO2009123446A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013053921A (ja) * | 2011-09-02 | 2013-03-21 | Ulvac Japan Ltd | エリプソメータ |
IN2015DN01909A (ja) * | 2012-08-28 | 2015-08-07 | Nikon Corp | |
CN103234913B (zh) * | 2013-04-03 | 2015-03-25 | 中国科学院上海光学精密机械研究所 | 极紫外光刻光源收集镜污染测量装置 |
CN107230394B (zh) * | 2016-03-25 | 2019-05-24 | 英济股份有限公司 | 具有激光投影的腔室模型 |
CN108152329B (zh) * | 2016-12-05 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 一种光罩真空吸盘区域污染物的检测系统以及检测方法 |
EP3584567A1 (en) * | 2018-06-20 | 2019-12-25 | Ficosa Adas, S.L.U. | Speckle detection systems, image capturing devices and methods |
KR102644866B1 (ko) | 2022-12-13 | 2024-03-07 | 한국전자기술연구원 | 반사성 객체 표면 오염도 상세 스캔 분석 장치 및 방법 |
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US5608526A (en) * | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
US5748318A (en) * | 1996-01-23 | 1998-05-05 | Brown University Research Foundation | Optical stress generator and detector |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7236666B2 (en) * | 2004-09-30 | 2007-06-26 | Intel Corporation | On-substrate microlens to couple an off-substrate light emitter and/or receiver with an on-substrate optical device |
US7473916B2 (en) * | 2005-12-16 | 2009-01-06 | Asml Netherlands B.V. | Apparatus and method for detecting contamination within a lithographic apparatus |
US7522263B2 (en) | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
TWI437225B (zh) * | 2006-04-27 | 2014-05-11 | Jordan Valley Semiconductors | 使用光學度量衡設備之污染監視及控制技術 |
US7342235B1 (en) * | 2006-04-27 | 2008-03-11 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
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2009
- 2009-03-10 NL NL1036682A patent/NL1036682A1/nl active Search and Examination
- 2009-03-23 TW TW098109410A patent/TW200947144A/zh unknown
- 2009-03-27 JP JP2011502879A patent/JP5461521B2/ja not_active Expired - Fee Related
- 2009-03-27 KR KR1020107024466A patent/KR20100133457A/ko not_active Application Discontinuation
- 2009-03-27 CN CN200980110569.0A patent/CN101981504B/zh not_active Expired - Fee Related
- 2009-03-27 WO PCT/NL2009/050151 patent/WO2009123446A1/en active Application Filing
- 2009-03-27 US US12/935,786 patent/US8547551B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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WO2009123446A1 (en) | 2009-10-08 |
TW200947144A (en) | 2009-11-16 |
US8547551B2 (en) | 2013-10-01 |
US20110090495A1 (en) | 2011-04-21 |
KR20100133457A (ko) | 2010-12-21 |
CN101981504A (zh) | 2011-02-23 |
CN101981504B (zh) | 2014-07-09 |
JP2011519475A (ja) | 2011-07-07 |
NL1036682A1 (nl) | 2009-10-02 |
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