JP5447870B2 - コンバージョンled - Google Patents
コンバージョンled Download PDFInfo
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- JP5447870B2 JP5447870B2 JP2010537357A JP2010537357A JP5447870B2 JP 5447870 B2 JP5447870 B2 JP 5447870B2 JP 2010537357 A JP2010537357 A JP 2010537357A JP 2010537357 A JP2010537357 A JP 2010537357A JP 5447870 B2 JP5447870 B2 JP 5447870B2
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- Prior art keywords
- luminescent material
- bam
- led
- light source
- conversion led
- Prior art date
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- Expired - Fee Related
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- 238000006243 chemical reaction Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims description 108
- 230000005855 radiation Effects 0.000 claims description 18
- 229910020068 MgAl Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000005284 excitation Effects 0.000 description 12
- 150000004645 aluminates Chemical class 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 238000009877 rendering Methods 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical group 0.000 description 2
- -1 silicate nitride Chemical class 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010063493 Premature ageing Diseases 0.000 description 1
- 208000032038 Premature aging Diseases 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052844 willemite Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Description
ここで0.2≦x≦0.48、好ましくは0.35≦x≦0.45;
0≦d≦0.1;
−0.1≦f≦1.0である。
{(1−a)*(0.82[Bax]Eu1−xO)*6[Al2O3])}*a(BaxEu1−xMg1−zMnzAl10O17)
ここでzはとりわけ高くても0.15であり、好ましくは最高で0.04である。
0≦d≦0.1;
−0.1≦f≦1.0である。
・Alを少量だけBにより代用する。
・2MをM1+M3により置換する。ここでM1は1つまたは複数の一価の金属Liおよび/またはNaであり、M3はLa,Ce,Nd,Sm,Pr,Gd,Yb,Luの群からの1つまたは複数の三価の希土類金属である。
・M1+Hをホスト格子に取り付ける。ここでM1は上に定義したような一価の金属であり、HはF,Clの群からの1つまたは複数のハロゲンであり、好ましくは最大で1%の割合である。
・中間格子スペースに三価の希土類金属M3+ZZを取り付ける。ここでM3は上記と同様に定義され、ZZの中間格子スペースはF,Cl,Oの群からの1つまたは複数の元素であり、混合物は好ましくはFおよびClに対する割合が最大で1%、Oに対しては最大で5%である。
・ルミネセンスを消光することとなるSiのような種々の金属イオンを、ルミネセンスが著しく減少しない周囲に取り付ける。これにより割合は微量となり、1重量%より格段に小さい。
以下では実施例に基づき本発明を詳細に説明する。
Claims (7)
- 一次光源と、該一次光源に前置された発光物質とを備えるコンバージョンLEDであって、
前記一次光源は、300nmから420nmの短波長のビーム領域で放射し、
前記発光物質はホスト格子としてのBAMシステムからなり、前記光源のビームを少なくとも部分的に長波長のビームに変換するコンバージョンLEDにおいて、
前記光源の表面にBAM発光物質が、薄膜として最高で50μmまでの層厚で直接被覆されており、
前記BAM発光物質の一般的化学量論比は
M x Eu 1−x Mg 1+d Al 10+2f O 17+d+3f
を有し、ここで
0.2≦x≦0.48;
0≦d≦0.1;
−0.1≦f≦1.0であり、
M=Baが単独で使用されるか、または式
M=Ba g (Ca,Sr) 1−g ただしg≧0.7
にしたがいSrおよび/またはCaにより部分的に置換されていることを特徴とするコンバージョンLED。 - 前記BAM発光物質は化学量論比
MxEu1−xMg1+dAl10+2fO17+d+3f
を有し、
ここで0.35≦x≦0.45;
であることを特徴とする請求項1記載のコンバージョンLED。 - 前記化学量論比は
BaxEu1−xMgAl10O17
であり、
xに対しては0.35≦x≦0.45が当てはまることを特徴とする請求項1記載のコンバージョンLED。 - 前記化学量論比は
BaxEu1−xMg1+dAl10+2fO17+d+3f
であり、
ここで、
0.2≦x≦0.48;
0≦d≦0.1;
−0.1≦f≦1.0であることを特徴とする請求項1記載のコンバージョンLED。 - 光源は、InGaNをベースにするLEDであることを特徴とする請求項1記載のコンバージョンLED。
- 光源は、InGaNをベースにするLEDを備える照明モジュールであることを特徴とする請求項1記載のコンバージョンLED。
- 前記一次放射のピーク波長は、340から410nmの領域にあることを特徴とする請求項1記載のコンバージョンLED。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007060198A DE102007060198A1 (de) | 2007-12-14 | 2007-12-14 | Konversions-LED |
DE102007060198.2 | 2007-12-14 | ||
PCT/EP2008/065648 WO2009077277A1 (de) | 2007-12-14 | 2008-11-17 | Konversions-led |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011506654A JP2011506654A (ja) | 2011-03-03 |
JP2011506654A5 JP2011506654A5 (ja) | 2011-04-21 |
JP5447870B2 true JP5447870B2 (ja) | 2014-03-19 |
Family
ID=40329051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010537357A Expired - Fee Related JP5447870B2 (ja) | 2007-12-14 | 2008-11-17 | コンバージョンled |
Country Status (8)
Country | Link |
---|---|
US (1) | US8242528B2 (ja) |
EP (1) | EP2220191B1 (ja) |
JP (1) | JP5447870B2 (ja) |
KR (1) | KR101579279B1 (ja) |
CN (1) | CN101896575B (ja) |
DE (1) | DE102007060198A1 (ja) |
TW (1) | TW200937685A (ja) |
WO (1) | WO2009077277A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007060199A1 (de) * | 2007-12-14 | 2009-06-18 | Osram Gesellschaft mit beschränkter Haftung | Leuchtstoff und Beleuchtungssystem mit derartigem Leuchtstoff |
TW201238406A (en) * | 2011-03-11 | 2012-09-16 | Ind Tech Res Inst | Light emitting devices |
DE102012202927B4 (de) * | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
CN109423285B (zh) | 2017-08-31 | 2023-09-26 | 日亚化学工业株式会社 | 铝酸盐荧光体及发光装置 |
DE102017121889B3 (de) * | 2017-09-21 | 2018-11-22 | Heraeus Noblelight Gmbh | Breitbandige halbleiterbasierte UV-Lichtquelle für eine Spektralanalysevorrichtung |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0529956A1 (en) | 1991-08-23 | 1993-03-03 | Kabushiki Kaisha Toshiba | Blue phosphor and fluorescent lamp using the same |
US6255670B1 (en) * | 1998-02-06 | 2001-07-03 | General Electric Company | Phosphors for light generation from light emitting semiconductors |
US6466135B1 (en) * | 2000-05-15 | 2002-10-15 | General Electric Company | Phosphors for down converting ultraviolet light of LEDs to blue-green light |
JP4168776B2 (ja) * | 2002-02-15 | 2008-10-22 | 三菱化学株式会社 | 発光装置及びそれを用いた照明装置 |
JP4165255B2 (ja) * | 2002-04-30 | 2008-10-15 | 三菱化学株式会社 | 発光装置及びそれを用いた照明装置 |
US7768189B2 (en) * | 2004-08-02 | 2010-08-03 | Lumination Llc | White LEDs with tunable CRI |
DE10316769A1 (de) * | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoffbassierte LED und zugehöriger Leuchtstoff |
US7573072B2 (en) * | 2004-03-10 | 2009-08-11 | Lumination Llc | Phosphor and blends thereof for use in LEDs |
US7077978B2 (en) | 2004-05-14 | 2006-07-18 | General Electric Company | Phosphors containing oxides of alkaline-earth and group-IIIB metals and white-light sources incorporating same |
US7390437B2 (en) | 2004-08-04 | 2008-06-24 | Intematix Corporation | Aluminate-based blue phosphors |
US7267787B2 (en) * | 2004-08-04 | 2007-09-11 | Intematix Corporation | Phosphor systems for a white light emitting diode (LED) |
EP1793804A2 (en) | 2004-09-09 | 2007-06-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Use of liposomal glucocorticoids for treating inflammatory states |
WO2006072919A2 (en) | 2005-01-10 | 2006-07-13 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising barium magnesium aluminate phosphor |
KR101329264B1 (ko) * | 2005-08-15 | 2013-11-14 | 코닌클리케 필립스 엔.브이. | 색 및/또는 광도가 변경가능한 광을 생성하기 위한 광원 및방법 |
WO2007125493A2 (en) | 2006-05-02 | 2007-11-08 | Koninklijke Philips Electronics N.V. | Color-stable phosphor converted led |
-
2007
- 2007-12-14 DE DE102007060198A patent/DE102007060198A1/de not_active Withdrawn
-
2008
- 2008-11-17 US US12/747,575 patent/US8242528B2/en not_active Expired - Fee Related
- 2008-11-17 JP JP2010537357A patent/JP5447870B2/ja not_active Expired - Fee Related
- 2008-11-17 KR KR1020107015617A patent/KR101579279B1/ko active IP Right Grant
- 2008-11-17 WO PCT/EP2008/065648 patent/WO2009077277A1/de active Application Filing
- 2008-11-17 EP EP08861047.2A patent/EP2220191B1/de not_active Not-in-force
- 2008-11-17 CN CN200880120722.3A patent/CN101896575B/zh not_active Expired - Fee Related
- 2008-12-12 TW TW097148337A patent/TW200937685A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101896575B (zh) | 2014-01-22 |
CN101896575A (zh) | 2010-11-24 |
TW200937685A (en) | 2009-09-01 |
DE102007060198A1 (de) | 2009-06-18 |
WO2009077277A1 (de) | 2009-06-25 |
JP2011506654A (ja) | 2011-03-03 |
KR101579279B1 (ko) | 2015-12-21 |
US8242528B2 (en) | 2012-08-14 |
EP2220191B1 (de) | 2018-03-28 |
KR20100105676A (ko) | 2010-09-29 |
US20100276714A1 (en) | 2010-11-04 |
EP2220191A1 (de) | 2010-08-25 |
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