JP5441470B2 - 共振器 - Google Patents

共振器 Download PDF

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Publication number
JP5441470B2
JP5441470B2 JP2009079401A JP2009079401A JP5441470B2 JP 5441470 B2 JP5441470 B2 JP 5441470B2 JP 2009079401 A JP2009079401 A JP 2009079401A JP 2009079401 A JP2009079401 A JP 2009079401A JP 5441470 B2 JP5441470 B2 JP 5441470B2
Authority
JP
Japan
Prior art keywords
resonant tunneling
resonator
layer
cross
plane direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009079401A
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English (en)
Japanese (ja)
Other versions
JP2010233031A5 (enExample
JP2010233031A (ja
Inventor
亮太 関口
泰史 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009079401A priority Critical patent/JP5441470B2/ja
Priority to US12/731,017 priority patent/US8319565B2/en
Publication of JP2010233031A publication Critical patent/JP2010233031A/ja
Publication of JP2010233031A5 publication Critical patent/JP2010233031A5/ja
Application granted granted Critical
Publication of JP5441470B2 publication Critical patent/JP5441470B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0084—Functional aspects of oscillators dedicated to Terahertz frequencies

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
JP2009079401A 2009-03-27 2009-03-27 共振器 Active JP5441470B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009079401A JP5441470B2 (ja) 2009-03-27 2009-03-27 共振器
US12/731,017 US8319565B2 (en) 2009-03-27 2010-03-24 Resonator tunnel device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009079401A JP5441470B2 (ja) 2009-03-27 2009-03-27 共振器

Publications (3)

Publication Number Publication Date
JP2010233031A JP2010233031A (ja) 2010-10-14
JP2010233031A5 JP2010233031A5 (enExample) 2012-05-17
JP5441470B2 true JP5441470B2 (ja) 2014-03-12

Family

ID=42783418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009079401A Active JP5441470B2 (ja) 2009-03-27 2009-03-27 共振器

Country Status (2)

Country Link
US (1) US8319565B2 (enExample)
JP (1) JP5441470B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP2013236326A (ja) * 2012-05-10 2013-11-21 Canon Inc 発振素子、受信素子、及び測定装置
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
JP7076937B2 (ja) * 2015-06-15 2022-05-30 キヤノン株式会社 半導体素子
WO2016203712A1 (en) * 2015-06-15 2016-12-22 Canon Kabushiki Kaisha Semiconductor device generating or detecting terahertz waves
JP7192188B2 (ja) * 2017-10-18 2022-12-20 ローム株式会社 テラヘルツ装置
JP7262959B2 (ja) * 2018-10-04 2023-04-24 キヤノン株式会社 半導体素子、半導体素子の製造方法
JP7574052B2 (ja) * 2020-10-29 2024-10-28 キヤノン株式会社 発振器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333118A (en) * 1965-04-27 1967-07-25 Jr Alfred J Cote Semiconductor neuristor based upon the esaki effect
JP3542620B2 (ja) * 1992-09-30 2004-07-14 テキサス インスツルメンツ インコーポレイテツド 多重ピーク共鳴トンネルダイオード
JP2629620B2 (ja) * 1994-10-13 1997-07-09 日本電気株式会社 負性抵抗ダイオード発振器
US7274263B2 (en) * 2004-08-25 2007-09-25 Samsung Electronics Co., Ltd. Microstrip stabilized quantum well resonance-tunneling generator for millimeter and submillimeter wavelength range
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4871816B2 (ja) * 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器

Also Published As

Publication number Publication date
US20100244994A1 (en) 2010-09-30
US8319565B2 (en) 2012-11-27
JP2010233031A (ja) 2010-10-14

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