JP5435747B2 - Pattern forming method and pattern forming apparatus - Google Patents

Description

  The present invention relates to a pattern forming method and a pattern forming apparatus for forming a conductor to be a wiring by depositing conductive ink on the inner surface of a hole, and in particular, only the inner surface of a hole such as a via hole, a contact hole, or a through hole. The present invention relates to a pattern forming method and a pattern forming apparatus for forming a conductor to be a wiring by depositing conductive ink on the inner surface of a hole subjected to the modification treatment after modification so that the conductive ink is compatible.

2. Description of the Related Art In recent years, attention has been focused on techniques for forming wiring patterns of electronic circuits and fine patterns such as electric wiring patterns on substrates. In addition, in a multilayer wiring board or the like, attention is also paid to a technique for forming conductors connected to an interlayer or the outside with high density (for example, Patent Documents 1 and 2).
An ink jet type liquid discharge head (ink jet head) is used to form the fine pattern. In this case, for example, a liquid in which metal particles or resin particles are diffused is ejected from an inkjet head to draw a pattern, and is cured by heating or the like to form an electrical wiring pattern.

In Patent Document 1, an insulating layer is formed of a photo-curing resin on an inner circuit board on which an inner circuit is formed in order to improve productivity and reduce the resin residue in the hole. , Exposed through a photomask that masks the locations to be via holes, removed the unexposed locations with a developer to form holes to be via holes, metallized the inner walls of the holes, inner circuit and outer layer In the method of manufacturing a multilayer wiring board that is electrically connected to a circuit, it is described that a laser is irradiated in a range of 50 to 100 μm into all holes.
This Patent Document 1 also describes that, since laser drilling is performed only for drilling with a small diameter after batch drilling with photo vias, the efficiency is higher than when all holes are drilled with the laser via method. Yes.

  Japanese Patent Laid-Open No. 2004-228561 penetrates the insulating layer in order to prevent the deterioration of the insulating characteristics between the holes over time while ensuring the adhesion of the wiring formed on the inner surface of the hole formed in the insulating layer. There is a wiring forming method in which after conducting an ozone solution treatment in which an inner surface of a plurality of holes is contacted with a solution containing ozone, a conductive layer is formed on at least the inner surface by electroless plating, and a wiring is formed on the inner surface. Have been described. This Patent Document 2 also describes that an ozone solution-ultraviolet irradiation treatment for irradiating an inner surface with ultraviolet rays is performed instead of the ozone solution treatment.

JP 2001-177252 A JP 2005-50999 A

  However, when an inkjet method is used to form a fine pattern, the occurrence of bulges (collections) that occur when a plurality of droplets that have landed on the substrate are united, deviation in the flight direction of the droplets, or landing on the substrate There is a problem that ink bleeding or the like occurs due to the occurrence of jaggy caused by the movement of the droplets.

Further, in Patent Document 1, there is a problem that the surface is not modified and the conductive ink does not penetrate into the hole even if, for example, the conductive ink is dropped.
Furthermore, in Patent Document 2, the substrate is immersed in an ozone solution or the substrate is sprayed with an ozone solution. For this reason, only the inner surface of the hole is not necessarily modified. As a result, when the conductive ink is dropped into the holes, there is a problem that the conductive ink is scattered in a place other than the holes subjected to the modification treatment.

  An object of the present invention is to eliminate the problems based on the above-described prior art, and to improve the inner surface of a hole such as a via hole, a contact hole, or a through hole, and to form a conductor in the hole And providing a pattern forming apparatus.

  In order to achieve the above object, according to a first aspect of the present invention, there is provided a step of detecting a distortion of the substrate and a distortion of the substrate when the substrate has a distortion. The first correction data for correcting the irradiation data for irradiating the hole with the laser beam is created based on the first correction data, and the droplet ejection data for correcting the droplets for ejecting the conductive ink to the hole is corrected. And generating the correction data of 2 and supplying the reaction gas to the hole portion of the substrate while supplying the laser beam only to the inner surface of the hole portion, and if there is no distortion of the substrate, based on the irradiation data If there is distortion of the substrate, the step of irradiating based on the first correction data to modify the inner surface of the hole, and the conductive ink in the hole, If there is no distortion, based on the droplet ejection data Dropwise, when there is distortion of the substrate is to provide a pattern forming method characterized by a step of droplet ejection on the basis of the second correction data.

In this case, the diameter of the laser beam is preferably smaller than the diameter of the conductive ink droplet.
Furthermore, it is preferable that the step of depositing the conductive ink into the hole portion deposits the conductive ink into the hole portion by dividing the conductive ink into a plurality of times.
Further, the reaction gas contains, for example, oxygen, nitrogen or fluorine.
The hole is, for example, a via hole, a contact hole, or a through hole.
Further, the diameter of the hole portion is reduced in the thickness direction of the substrate, for example. That is, the cross-sectional shape is trapezoidal.

  According to a second aspect of the present invention, for a substrate in which a hole is formed, a detection unit that detects distortion of the substrate, a gas supply unit that supplies a reactive gas to the hole of the substrate, and the hole An irradiation unit that irradiates laser light based on irradiation data, an ejection unit that deposits conductive ink on the hole based on droplet ejection data, and the irradiation data based on arrangement information of the hole And the data supply unit for supplying the droplet ejection data to the discharge unit, and when the detection unit detects a distortion in the substrate, the irradiation data is corrected based on the distortion of the substrate. And a correction data creation unit that creates second correction data obtained by correcting the droplet ejection data, and the reaction gas is supplied to the hole of the substrate by the gas supply unit. Irradiation while supplying The laser beam is irradiated only on the inner surface of the hole portion based on the irradiation data when there is no distortion of the substrate, and is irradiated based on the first correction data when there is distortion of the substrate. Then, the inner surface of the hole is reformed, and the conductive ink is ejected into the hole by the ejection unit when the substrate is not distorted, based on the droplet ejection data. If there is, there is provided a pattern forming apparatus characterized in that droplets are ejected based on the second correction data.

In this case, the diameter of the laser beam is preferably smaller than the diameter of the conductive ink droplet.
Moreover, it is preferable that the discharge portion ejects the conductive ink into the hole portion in a plurality of times.
Further, the reaction gas contains, for example, oxygen, nitrogen or fluorine.
The hole is, for example, a via hole, a contact hole, or a through hole.

According to the present invention, since the distortion of the substrate can be detected and the deviation of the laser light irradiation position can be suppressed, only the inner surface of the hole can be modified. For this reason, scattering of conductive ink droplets other than the inner surface of the hole can be prevented. In addition, since the distortion of the substrate can be detected and the displacement of the laser light irradiation position and the ink droplet ejection position can be suppressed, the substrate can be flexible and can be easily deformed. be able to.
Furthermore, since the modification is performed using laser light, the energy during the modification can be increased, and a surface treatment with a high degree is possible. For this reason, the modification can be speeded up, and the variation of the composition of the non-modified material can be increased. Furthermore, by changing the reaction gas, it is possible to cope with substrates having various compositions and inks having various compositions.

It is a mimetic diagram showing a pattern formation device concerning an embodiment of the present invention. It is a schematic diagram which shows the structure of the irradiation part of the pattern formation apparatus of embodiment of this invention. (A) is a typical perspective view which shows typically the pattern formation method by the pattern formation apparatus which concerns on embodiment of this invention, (b) is the board | substrate used for the pattern formation method of embodiment of this invention. It is a typical sectional view shown. (A)-(d) is typical sectional drawing which shows an example of the pattern formation by the pattern formation apparatus which concerns on embodiment of this invention in process order. (A)-(d) is typical sectional drawing which shows the other example of the pattern formation by the pattern formation apparatus which concerns on embodiment of this invention in process order. (A)-(d) is typical sectional drawing which shows the other example of the pattern formation by the pattern formation apparatus which concerns on embodiment of this invention in process order.

Hereinafter, a pattern forming method and a pattern forming apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
FIG. 1 is a schematic diagram showing a pattern forming apparatus according to an embodiment of the present invention. FIG. 2 is a schematic diagram illustrating a configuration of an irradiation unit of the pattern forming apparatus according to the embodiment of the present invention.

  A pattern forming apparatus 10 shown in FIG. 1 includes an input unit (data) for inputting pattern data such as strain detection unit 12, modification processing unit 14, pattern forming unit 16, substrate 100 alignment position information, and via hole formation position information. Supply unit) 18, drawing data creation unit (data supply unit) 20, control unit 22, alignment detection unit 24, first image processing unit (correction data creation unit) 26, and second image processing unit (correction data creation). Part) 28. Each component of the pattern forming apparatus 10 is controlled by the controller 22.

The strain detection unit 12 and the modification processing unit 14 are connected via the first delivery unit 60. The modification processing unit 14 and the pattern forming unit 16 are connected via a second delivery unit 62.
The pattern forming apparatus 10 is a single wafer type that processes the substrates 100 one by one, but the present invention is not limited to this. The pattern forming apparatus 10 may be, for example, a roll-to-roll system that continuously conveys a long substrate.

In the pattern forming apparatus 10 of the present embodiment, for example, a substrate 100 on which a via hole 110 is formed in advance as shown in FIG. 3B is used. In the substrate 100, for example, an insulating layer 104 is formed on a base material 102, and an electrode layer 105 is formed in the insulating layer 104. An insulating layer 106 is formed over the insulating layer 104 and the electrode layer 105. A via hole 110 is formed in the insulating layer 106 at a position aligned with the electrode layer 105.
For example, the diameter of the via hole 110 decreases as it goes toward the substrate 102. That is, the via hole 110 has a trapezoidal cross-sectional shape.
In addition, a plurality of alignment marks 108 (see FIG. 3A) for alignment are formed on the substrate 12. The alignment mark 108 is, for example, a cross mark.
The via hole 110 corresponds to the hole of the present invention. The hole is not limited to the via hole 110, and is provided for connecting each layer in a hole, groove, or the like for forming wiring in an electronic element constituting an electronic circuit or the like, and a multilayer wiring board. Applicable to contact holes. For example, the hole is called a contact hole or a through hole.

As the substrate 102, a glass substrate, a silicon wafer (silicon substrate), a resin film substrate, or the like can be used. As a material for the glass substrate, for example, quartz or lead-free glass for LCD can be used. Furthermore, a glass epoxy resin (glass epoxy base plate) in which glass and resin are mixed can be used. Moreover, as a resin film base material, a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET), a polycarbonate (PC), polyethersulfone (PES) etc. can be used, for example. The resin film substrate may have a barrier layer and a conductive layer formed thereon.
For the insulating layers 104 and 106, for example, an acrylic resin or a polyimide resin can be used.

  The strain detection unit 12 detects the strain of the substrate 100. The strain detection unit 12 includes a strain sensor 30 that detects strain of the substrate 100, and the strain sensor 30 is provided in the chamber 12a. Further, the strain sensor 30 is connected to the alignment detection unit 24. Furthermore, the strain detection unit 12 includes a transport mechanism 32 that supports and transports the substrate 100. The transport mechanism 32 is provided in the chamber 12a, and moves the substrate 100, for example, in the transport direction D while placing the substrate 100 on a predetermined table in the detection region of the strain sensor 30 and holding the substrate 100 in a predetermined posture. . The transport mechanism 32 is not limited to transporting the substrate 100 in one direction such as the transport direction D, and may transport the substrate 100 in two orthogonal directions.

The strain sensor 30 is an optical sensor including a light source such as an LD (semiconductor laser) or LED and an image sensor such as a CMOS or CCD.
The strain sensor 30 images the alignment mark 108 (see FIG. 3A) provided in advance on the substrate 100 to obtain image data of the alignment mark 108. The image data is output to the alignment detection unit 24.

  The alignment detection unit 24 calculates, for example, the size and orientation of the alignment mark 108, the distance between the alignment marks 108, and the like based on the image data of the alignment mark 108 obtained by the strain sensor 30. By comparing with design value data, distortion information (including drawing distortion information) of the substrate 100 is created. The distortion information (including drawing distortion information) of the substrate 100 is output to the first image processing unit 26 and the second image processing unit 28, respectively. As will be described later, in the first image processing unit 26 and the second image processing unit 28, the correction data for the reforming process is respectively obtained based on the distortion information (including the distortion information of the drawing) of the substrate 100. And correction data for droplet ejection.

In the present invention, the distortion of the substrate 100 includes drawing distortion in addition to the distortion of the substrate 100 itself. The distortion of the substrate 100 itself is that the substrate 100 is displaced from the predetermined position in the vertical direction or the horizontal direction, is displaced in the thickness direction of the substrate 100, or is rotated.
In addition to the displacement of the drawing position, the drawing distortion includes, for example, that the drawing shape is enlarged, reduced, or distorted into a trapezoidal shape.

  Note that the imaging of the alignment mark 108 by the strain sensor 30 is not particularly limited. For example, a mode in which the alignment mark 108 of the fixed substrate 100 is imaged while the strain sensor 30 is moved two-dimensionally, the substrate For example, the alignment mark 108 of the substrate 100 may be imaged while moving 100 (the transport mechanism 32).

  The modification processing unit 14 performs modification processing on the inner surface 110 a of the via hole 110 formed in the substrate 100. The modification processing unit 14 includes an irradiation unit 40, a gas supply unit 42, and a transport mechanism 44. The irradiation unit 40 is connected to the first image processing unit 24. An irradiation unit 40, a pipe 42a provided in the gas supply unit 42, and a transport mechanism 44 are provided in the chamber 14a.

  As shown in FIG. 2, the irradiation unit 40 of the modification processing unit 14 irradiates the inner surface 110 a of the via hole 110 of the substrate 100 with the laser beam L. The irradiation unit 40 irradiates a laser beam L having a necessary spot diameter on the exposure target surface, a driving unit 40a, a laser oscillator 40b, a shutter mechanism 40c, a collimating lens 40d, a lens system 40e for adjusting the luminous flux of the laser beam L, and the exposure target surface. The tip optical system (mirror, lens, etc.) 40f is configured to irradiate the inner surface 110a of the via hole 110 with a laser beam having a diameter (beam spot diameter) smaller than the diameter of the opening of the via hole 110. .

For example, the ejection unit 40 is scanned in a direction orthogonal to the transport direction D of the substrate 100, and the reforming process is performed on a region where the reforming process can be performed by a single scan in the same direction. When one modification process in the scanning direction is completed, the substrate 100 is moved by a predetermined amount, the modification process is performed for the next region, and this operation is repeated to form all the via holes 110 formed in the substrate 100. A serial method is used in which a modification process is performed.
The ejection unit 40 may be provided with a scanning optical unit (not shown) that scans the laser beam L, and the laser beam L may be scanned without scanning the ejection unit 40 in the modification process.
Further, the discharge unit 40 may be configured to be capable of irradiating a large number of laser beams L in the width direction orthogonal to the transport direction D of the substrate 100.

In the ejection unit 40, as the laser light L, for example, laser light in the ultraviolet region or visible light region having a wavelength of 300 (nm), 365 (nm), 405 (nm), or the like, and further, laser light in the infrared region. Is used. The output of the laser light is 10 to several hundreds (mJ / cm ² ), and the diameter of the laser light (beam spot diameter) is smaller than the diameter of the ink droplet and the via hole 110, for example, 1 to 2 μm. Here, the diameter of the via hole 110 is the minimum value of the diameter when the diameter of the via hole 110 changes.
In addition, in the discharge unit 40, various types such as a semiconductor laser, a solid-state laser, a liquid laser, and a gas laser can be used as long as the above-described laser light can be irradiated.

The gas supply unit 42 supplies a reaction gas for the modification process to the via hole 110 formed in the substrate 100 when the laser beam L is irradiated for the modification process. The concentration (filling amount) of the reactive gas in the via hole 110 formed in the substrate 100 is also adjusted by the gas supply unit 42.
The gas supply unit 40 is provided with a pipe 42 a for supplying a reaction gas to the via hole 110 of the substrate 100. A reactive gas is supplied to the via hole 110 to the substrate 100 through the pipe 42a. The gas supply unit 42 is connected to the control unit 22, and the control unit 22 controls the supply amount of reaction gas, the supply timing, and the like.
As the reaction gas, for example, a gas containing oxygen, a gas containing nitrogen, or a gas containing a fluorine-based gas such as CF ₂ gas or CF ₄ gas is used.
When the gas supply unit 42 is configured to be able to selectively fill a plurality of reaction gases into the chamber 14a, the reaction gas is discharged from the chamber 14a and the substrate 100 is connected to the via hole 110 as necessary. Is appropriately provided.

Here, as a modification process for preventing the ink droplets 50a made of conductive ink from adhering to other than the inner surface 110a of the via hole 110, for example, a lyophilic process or a liquid repellent process is performed according to the characteristics of the conductive ink. There is.
In the present embodiment, the lyophilic process and the liquid repellent process can be selectively switched by switching the reaction gas used for the reforming process. For example, when water-based ink is used, a laser is applied to the inner surface 110 a of the via hole 110 of the substrate 100 in a state where a reaction gas containing oxygen or a reaction gas containing nitrogen is supplied from the gas supply unit 42 to the via hole 110 of the substrate 100. When the light L is irradiated, the inner surface 110a of the via hole 110 irradiated with the laser light L becomes more lyophilic than the non-irradiated region where the laser light L is not irradiated.

On the other hand, when the laser beam L is irradiated to the inner surface 110a of the via hole 110 of the substrate 100 in a state where the fluorine-based gas is supplied to the via hole 110 of the substrate 100, the inner surface 110a of the via hole 110 irradiated with the laser beam L is irradiated with the laser beam. The liquid repellency is higher than that of the non-irradiated region where L is not irradiated.
The state having “high lyophilicity” is a state in which the contact angle of the droplet with the inner surface 110a of the via hole 110 is relatively small, and the state having “high liquid repellency” is the via hole 110. The contact angle of the droplet with respect to the inner surface 110a is relatively large.
As a specific example of the “state having high lyophilicity”, a state in which the contact angle of the droplet with respect to the substrate 100 is 45 ° or less can be given. Further, as a specific example of “a state having high liquid repellency”, a state in which a contact angle of a droplet with respect to the substrate 100 is 80 ° or more can be given.

  The transport mechanism 44 is provided in the chamber 14a, and moves the substrate 100, for example, in the transport direction D while placing the substrate 100 on a predetermined table in the irradiation region of the laser beam of the irradiation unit 40 and holding the substrate 100 in a predetermined posture. It is.

  In the modification processing unit 14, the laser light L from the ejection unit 40 is irradiated only on the inner surface 110 a of the via hole 110, as in the irradiation unit 150 shown in FIG. . By the irradiation with the laser light L and the reactive gas, the inner surface 110a of the via hole 110 is modified to be lyophilic or lyophobic, for example, as described above.

The pattern forming unit 16 ejects conductive ink onto the substrate 100 via hole 110 after the modification process. In the pattern forming unit 16, a discharge unit 50 and a transport mechanism 52 are provided in the chamber 16a.
The ejection unit 50 includes an inkjet head (not shown) capable of ejecting conductive ink, and a driver (not shown) for ejecting ink droplets 50a from the inkjet head. This driver is connected to the second image processing unit 28.
The configuration of the ink jet head is not particularly limited as long as the conductive ink can be discharged, and can be appropriately used, such as a piezo type or a thermal type. Moreover, a serial type or a full line type can be used for an inkjet head. The size of the ink droplet 50a ejected from the ejection unit 50 is, for example, 10 to 100 μm.

  As the conductive ink, for example, if it is a physical property (viscosity or the like) that can be ejected by an inkjet head, for example, metal particles such as silver (Ag), gold (Au), copper (Cu), and these metal elements are used. Wiring inks such as a metal liquid in which the particles of the alloy containing are dispersed in a predetermined solvent and a precursor solution containing the above-described metal element can be used. Vias having a size of 10 μm to several 100 μm can be formed by this conductive ink.

  The transport mechanism 52 is provided in the chamber 16a, and in the discharge region of the ink droplet 50a of the discharge unit 50, for example, the substrate 100 is placed on a predetermined base and moved in the transport direction D, for example, while being held in a predetermined posture. Is. In the transport mechanism 52, the substrate 100 is moved in a direction orthogonal to the transport direction D with respect to the discharge unit 50 depending on the form of the discharge unit 50.

In the pattern forming unit 16, the ink droplet 50 a is ejected by the ejection unit 50 onto the inner surface 110 a of the modified via hole 110 as shown in FIG. 3B, for example. The inner surface 110a of the via hole 110 is filled with the ink droplet 50a.
When the via hole 110 is deep, bubbles may enter the via hole 110 and the ink droplet 50a may not enter. For this reason, it is preferable that the ink droplets 50a are not ejected continuously from the ejection unit 50 into the via hole 110, but are ejected in a plurality of times.
After the conductive ink droplet 50a is ejected from the ejection portion 50 onto the inner surface 110a of the via hole 110, the substrate 100 is discharged from a substrate discharge portion (not shown).
Depending on the characteristics of the conductive ink, the conductive ink is cured by irradiating ultraviolet rays or applying heat, thereby forming the via 112 serving as a wiring. In this case, in order to cure the ink droplets 50 a ejected onto the inner surface 110 a of the via hole 110, an ultraviolet irradiation unit or a heating unit is provided directly below or downstream of the transport direction D of the ejection unit 50.

The input unit 18 includes an input device (not shown) for an operator (user) to make various inputs, and a display unit (not shown). Various types of input devices such as a keyboard, a mouse, a touch panel, and buttons are used.
The operator can input various processing conditions of the strain detection unit 12, the modification processing unit 14, and the pattern formation unit 16 to the control unit 22 via the input unit 18, and position information of alignment marks on the substrate 100. The shape information such as the size of the alignment mark and the pattern data such as the via hole formation position information can be input to the control unit 22.
Further, the operator can know the state of the pattern formation process and the state of the via formation process, such as the state of the strain detection unit 12, the modification processing unit 14, and the pattern formation unit 16, via the display unit of the input unit 18. it can. This display unit also functions as means for displaying a warning such as an error message. The display unit also functions as a notification unit that notifies abnormality.

  The drawing data creation unit 20 converts the pattern data such as the formation position information of the via hole input from the input unit 18 into a data format that can be used for irradiating the inner surface 110a of the via hole 110 with the laser beam L in the irradiation unit 40. It converts and creates the irradiation data which can be utilized in the irradiation part 40. FIG. In the drawing data creation unit 20, for example, pattern data (CAD data) such as formation position information of the via hole 110 described in a vector format is converted into raster data. If the input data format can be used by the irradiation unit 40, data conversion is not necessarily required. In this case, pattern data such as via hole formation position information is directly input to the first image processing unit 26 without performing data conversion or via the drawing data creating unit 20 in the drawing data creating unit 20. It may be.

The first image processing unit 26 is connected to the drawing data creation unit 20 and the alignment detection unit 24. When the strain detection unit 12 detects a strain on the substrate 100, the first image processing unit 26 receives the strain information of the substrate 100, In order to change the irradiation position of the laser light L in accordance with the distortion information, correction irradiation data (first correction data) for correcting the irradiation data is created. The first image processing unit 26 outputs the corrected irradiation data to the driving unit 40a. In the irradiation unit 40, the laser beam L is irradiated to the inner surface 110 a of the via hole 110 based on the corrected irradiation data input to the driving unit 40 a.
Note that when no distortion is detected by the distortion detection unit 12, the first image processing unit 26 does not create corrected irradiation data. Therefore, the irradiation data input to the first image processing unit 26 is output to the drive unit 40a of the irradiation unit 40 without being corrected. In the irradiation part 40, the laser beam L is irradiated to the inner surface 110a of the via hole 110 based on the irradiation data input to the driving part 40a.

The second image processing unit 28 is connected to the input unit 18 and the alignment detection unit 24. In the ejection unit 50, pattern data such as via hole formation position information input from the input unit 18 can be used as droplet ejection data without conversion.
In the second image processing unit 28, when the distortion is detected in the substrate 100 by the distortion detection unit 12, the distortion information of the substrate 100 is received, and the droplet ejection position of the ink droplet 50a is determined according to the distortion information. In order to change, corrected droplet ejection data (second correction data) for correcting droplet ejection data is created. The corrected droplet ejection data is output to a driver (not shown) of the ejection unit 50. In the ejection unit 50, the ink droplet 50 a is ejected onto the inner surface 110 a of the via hole 110 based on the corrected droplet ejection data input to the driver.
If no distortion is detected by the distortion detection unit 12, the second image processing unit 28 does not create corrected droplet ejection data. For this reason, the droplet ejection data input to the second image processing unit 28 is output to the driver of the ejection unit 50 without being corrected. In the ejection unit 50, the ink droplet 50 a is ejected onto the inner surface 110 a of the via hole 110 based on the droplet ejection data input to the driver.

  In the first image processing unit 26 and the second image processing unit 28, for example, when the position of the substrate 100 is rotated with respect to a predetermined position, the amount of rotation is calculated and the rotation is canceled out. Correction data is generated on demand. Thereafter, corrected irradiation data and corrected droplet ejection data corresponding to the correction data of this pattern are generated on demand. “Correction irradiation data and correction droplet ejection data” here refers to shift processing (surface direction deviation correction) and offset processing for irradiation data (via hole formation position information) and droplet ejection data for laser beam irradiation. (Thickness direction deviation correction), those subjected to rotation processing, enlargement processing, reduction processing, and trapezoid correction processing (processing for correcting a trapezoidally distorted pattern into a rectangular shape) are included.

In the pattern forming apparatus 10 of the present embodiment, the modification processing unit 14 and the pattern forming unit 16 have a common feedback loop, and strain information of the same (common) substrate 100 obtained from the strain detection unit 12. Based on the above, the irradiation correction of the laser beam L and the ink droplet ejection correction are performed. For this reason, it is possible to increase the accuracy of the irradiation correction of the laser beam L and the ink droplet ejection correction, and since the strain information of the common substrate is used, the creation of correction data can be made faster. The cost required for correction can also be reduced.
The functions of the first image processing unit 26 and the second image processing unit 28 may be combined into a single image processing unit.

Next, the pattern formation method of this embodiment is demonstrated.
FIG. 3A is a schematic perspective view schematically showing a pattern forming method by the pattern forming apparatus according to the embodiment of the present invention, and FIG. 3B is used for the pattern forming method of the embodiment of the present invention. It is a typical sectional view showing a substrate. 4A to 4D are schematic cross-sectional views showing an example of pattern formation by the pattern forming apparatus according to the embodiment of the present invention in the order of steps.

First, as shown in FIG. 3A, the alignment mark 108 of the substrate 100 in which the via hole 110 is formed in advance is imaged by the strain sensor 30, and the alignment detection unit 24 calculates whether or not the substrate 100 is distorted. The
As described above, the configuration of the substrate 100 is, for example, the configuration illustrated in FIGS. 3B and 4A.

Next, when the distortion of the substrate 100 is not detected by the alignment detection unit 24, the first image processing unit 26 does not create correction irradiation data for correcting the input irradiation data, and based on this irradiation data. 4B, the laser beam L is applied to the inner surface 110a of the via hole 110. As shown in FIG.
On the other hand, when distortion of the substrate 100 is detected by the alignment detection unit 24, the first image processing unit 26 generates corrected irradiation data for correcting the irradiation data. Based on this corrected irradiation data, the laser beam L is irradiated to the inner surface 110a of the via hole 110 as shown in FIG.
When irradiating the inner surface 110a of the via hole 110 with the laser light L, for example, in the case of lyophilicity via the pipe 42a from the gas supply unit 42, a reaction gas containing oxygen or a reaction containing nitrogen. Gas is supplied so that the inner surface 110a of the via hole 110 has a predetermined concentration. Further, in the case of liquid repellency, a fluorine-based gas is supplied so that the inner surface 110a of the via hole 110 has a predetermined concentration.
As described above, the modification process is performed by appropriately irradiating only the inner surface 110a of the via hole 110 with the laser beam L according to the distortion of the substrate 100, the formation position of the formed via hole 110, and the like.

Next, when the distortion of the substrate 100 is not detected by the alignment detection unit 24, the second image processing unit 28 does not create corrected droplet ejection data for correcting the input droplet ejection data, and the droplet ejection data. Based on the above, as shown in FIG. 4C, the ink droplet 50a of the conductive ink is ejected into the via hole 110.
On the other hand, when the alignment detection unit 24 detects the distortion of the substrate 100, the second image processing unit 28 generates corrected droplet ejection data for correcting the irradiation data. Based on the corrected droplet ejection data, an ink droplet 50a of conductive ink is ejected into the via hole 110 as shown in FIG.
As described above, the ink droplet 50a is appropriately ejected into the via hole 110 in accordance with the distortion of the substrate 100, the formation position of the formed via hole 110, and the like.
If necessary, the conductive ink ink droplets 50a are cured by irradiating ultraviolet rays or applying heat as necessary, such as the characteristics of the conductive ink, to form vias 112 in the via holes 110. be able to.

When the ink droplet 50a is ejected into the via hole 110 to form the via 112 as in the present embodiment, if the via hole 110 is deep, bubbles may enter the via hole 110 and the ink droplet 50a may not enter. For this reason, it is preferable that the ink droplet 50a is not ejected continuously into the via hole 110, but the ink droplet 50a is ejected in a plurality of times.
Next, the electrode 114 is formed on the surface 106 a of the insulating layer 106. The formation method of this electrode 114 is not specifically limited. For example, it can be formed by a photolithography method.

In the present embodiment, the via hole 110 has been described as an example, but the present invention is not limited to this. For example, as shown in FIG. 5A, vias 112 serving as wiring can also be formed on the substrate 120 in which the through holes 122 are formed.
As shown in FIG. 5A, the substrate 120 has the same configuration as any of the base material 102 and the insulating layers 104 and 106 of the present embodiment. A plurality of alignment marks (not shown) are formed on the substrate 120.
Even in this case, the alignment mark on the substrate 120 is imaged by the strain sensor 30, and the alignment detector 24 detects whether or not the substrate 120 is distorted.

Next, when the distortion of the substrate 120 is not detected by the alignment detection unit 24, the first image processing unit 26 does not create corrected irradiation data for correcting the input irradiation data, and based on this irradiation data. As shown in FIG. 5B, the inner surface 120a of the through hole 122 is irradiated with the laser light L.
On the other hand, when distortion of the substrate 120 is detected by the alignment detection unit 24, the first image processing unit 26 generates corrected irradiation data for correcting the irradiation data. Based on the corrected irradiation data, the laser beam L is irradiated to the inner surface 120a of the through hole 122 as shown in FIG.
When irradiating the inner surface 120a of the through hole 122 with the laser light L, for example, in the case of making it lyophilic from the gas supply unit 42 through the pipe 42a, it contains a reactive gas containing oxygen or nitrogen. The reactive gas is supplied so that the inner surface 120a of the through hole 122 has a predetermined concentration. Further, in the case of liquid repellency, a fluorine-based gas is supplied so that the inner surface 120a of the through hole 122 has a predetermined concentration.
As described above, the modification process is performed by appropriately irradiating only the inner surface 120a of the through hole 122 with the laser beam L according to the distortion of the substrate 120, the formation position of the formed through hole 122, and the like.

Next, when the distortion of the substrate 120 is not detected by the alignment detection unit 24, the second image processing unit 28 does not create the corrected droplet ejection data for correcting the input droplet ejection data, and this droplet ejection data. Based on the above, ink droplets 50a of conductive ink are ejected into the through holes 122 as shown in FIG.
On the other hand, when the alignment detection unit 24 detects the distortion of the substrate 120, the second image processing unit 28 generates corrected droplet ejection data for correcting the irradiation data. Based on the corrected droplet ejection data, an ink droplet 50a of conductive ink is ejected into the through hole 122 as shown in FIG.
The substrate 120 is placed on the stage of the transport mechanism 52 (see FIG. 1) of the pattern forming unit 16 (see FIG. 1), and when the ink droplet 50a is ejected into the through hole 122, the through hole 122 is placed. Thus, the ink droplet 50a does not fall out.
In this manner, the ink droplet 50a is appropriately ejected into the through hole 122 according to the distortion of the substrate 120, the formation position of the formed through hole 122, and the like.

  Note that the ink droplets 50a of the conductive ink are cured by irradiating ultraviolet rays or applying heat as necessary, such as the characteristics of the conductive ink. As a result, as shown in FIG. 5D, the via 112 serving as a wiring can be formed in the through hole 122.

Furthermore, in the present embodiment, for example, as shown in FIG. 6A, a via 112 serving as a wiring can also be formed on the substrate 130 in which the contact hole 140 is formed.
The substrate 130 is provided with a second insulating layer in which an electrode layer 135 is formed at a position matching the via 133 on the first insulating layer 132 in which the via 133 is formed. A third insulating layer 136 in which a contact hole 140 is formed is provided at a position where the contact hole 140 is formed.
The first insulating layer 132 to the third insulating layer 136 of the present embodiment have the same configuration as the insulating layers 104 and 106 of the present embodiment. A plurality of alignment marks (not shown) are formed on the substrate 130.
Even in this case, the alignment mark on the substrate 130 is imaged by the strain sensor 30, and the alignment detection unit 24 detects whether or not the substrate 130 is distorted.

Next, when the distortion of the substrate 130 is not detected by the alignment detection unit 24, the first image processing unit 26 does not create correction irradiation data for correcting the input irradiation data, but based on the irradiation data. 6B, the laser beam L is applied to the inner surface 140a of the contact hole 140. As shown in FIG.
On the other hand, when the alignment detection unit 24 detects the distortion of the substrate 130, the first image processing unit 26 generates corrected irradiation data for correcting the irradiation data. Based on the corrected irradiation data, the laser beam L is irradiated onto the inner surface 140a of the contact hole 140 as shown in FIG.
When irradiating the inner surface 140a of the contact hole 140 with the laser light L, for example, in the case of making it lyophilic from the gas supply section 42 through the pipe 42a, it contains a reactive gas containing oxygen or nitrogen. The reactive gas is supplied so that the inner surface 140a of the contact hole 140 has a predetermined concentration. Further, in order to make the liquid repellency, a fluorine-based gas is supplied so that the inner surface 140a of the contact hole 140 has a predetermined concentration.
As described above, the modification process is performed by appropriately irradiating only the inner surface 140a of the contact hole 140 with the laser light L in accordance with the distortion of the substrate 130, the formation position of the formed contact hole 140, and the like.

Next, when the distortion of the substrate 130 is not detected by the alignment detection unit 24, the second image processing unit 28 does not create the corrected droplet ejection data for correcting the input droplet ejection data, and the droplet ejection data. Based on the above, as shown in FIG. 6C, the ink droplet 50a of the conductive ink is ejected into the contact hole 140.
On the other hand, when the alignment detection unit 24 detects the distortion of the substrate 130, the second image processing unit 28 generates corrected droplet ejection data for correcting the irradiation data. Based on the corrected droplet ejection data, an ink droplet 50a of conductive ink is ejected into the contact hole 140 as shown in FIG.
In this manner, the ink droplet 50a is appropriately ejected into the contact hole 140 according to the distortion of the substrate 130, the formation position of the formed contact hole 140, and the like.

  Note that the ink droplets 50a of the conductive ink are cured by irradiating ultraviolet rays or applying heat as necessary, such as the characteristics of the conductive ink. As a result, as shown in FIG. 6D, the via 112 serving as a wiring can be formed in the contact hole 140.

In the present embodiment, as described above, distortion (including drawing distortion) of the substrates 100, 120, and 130 can be detected and displacement of the irradiation position of the laser light L can be suppressed. Only the inner surface 110a of the part) can be modified. For this reason, scattering of the ink droplets 50a other than the inner surface 110a of the via hole 110 can be prevented, and the via 112 can be formed with high accuracy. Further, since the distortion of the substrates 100, 120, and 130 can be detected and the displacement of the laser light L irradiation position and the ink droplet ejection position can be suppressed, the substrates 100, 120, and 130 are flexible and deformed. However, the via 112 can be formed with high accuracy.
Furthermore, since the modification is performed using the laser beam L, the energy during the surface modification can be increased, and the surface modification can be performed to a high degree. For this reason, the surface modification can be speeded up, and the variation of the composition of the non-modified material can be increased. Furthermore, by changing the reaction gas, it is possible to cope with substrates having various compositions and inks having various compositions.

In the present embodiment, since the surface modification is performed using the laser beam L and the reactive gas, a cleaning process is not necessary. Therefore, the manufacturing process can be simplified. Further, since the via is directly formed, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with the photolithography method.
Furthermore, since the irradiation position of the laser beam L and the ink droplet ejection position are corrected using one detection result of the distortion of the substrates 100, 120, and 130, the correction of the irradiation position of the laser beam L, and The accuracy of correcting the droplet ejection position of the ink droplet 50a can be increased, and furthermore, since one detection result is used, the time required for creating the corrected irradiation data and the corrected droplet ejection data can be shortened. In addition, since only one detection result is used, the number of strain sensors 30 can be reduced, and the cost can be reduced.

In the present embodiment, a substrate in which holes such as via holes, through holes, and contact holes are formed is used. These via holes, through holes, contact holes, etc. are formed based on formation position information of via holes, through holes, contact holes, etc., respectively, by known forming methods used in the manufacturing process of semiconductor elements and multilayer wiring boards. The
Note that the pattern forming apparatus and pattern forming method of the present embodiment can be used for, for example, wiring of a multilayer wiring board, wiring of TFTs, and the like. More specifically, it can be used for solar cells, electronic paper, organic EL elements, organic EL displays, etc., and in any case, even if it is a flexible substrate, the substrate distortion (drawing distortion) is corrected. This is preferable.

  The present invention is basically configured as described above. Although the pattern forming method and the pattern forming apparatus of the present invention have been described in detail above, the present invention is not limited to the above-described embodiment, and various improvements or modifications may be made without departing from the spirit of the present invention. Of course.

DESCRIPTION OF SYMBOLS 10 Pattern formation apparatus 12 Distortion detection unit 14 Modification | denaturation processing unit 16 Pattern formation part 18 Input part 20 Drawing data creation part 22 Control part 24 Alignment detection part 26 1st image processing part 28 2nd image processing part 30 Strain sensor 40 Irradiation part 50 Discharge part 100, 120, 130 Substrate 110 Via hole 112 Via 122 Through hole 140 Contact hole

Claims (12)

Detecting the distortion of the substrate with respect to the substrate in which the hole is formed;
If there is distortion of the substrate, first correction data for correcting irradiation data for irradiating the hole with laser light is created based on the distortion of the substrate, and the hole has conductivity. Creating second correction data for correcting droplet ejection data for ejecting ink;
While supplying the reaction gas to the hole portion of the substrate, the laser beam is irradiated only on the inner surface of the hole portion based on the irradiation data when there is no distortion of the substrate, and there is distortion of the substrate. In some cases, the step of modifying the inner surface of the hole by irradiating based on the first correction data;
When the hole is not distorted, the conductive ink is deposited based on the droplet ejection data, and when the substrate is distorted, droplets are deposited based on the second correction data. And a pattern forming method.   The pattern forming method according to claim 1, wherein a diameter of the laser beam is smaller than a diameter of the conductive ink droplet.   3. The pattern forming method according to claim 1, wherein in the step of depositing the conductive ink into the hole portion, the conductive ink is divided into a plurality of times and the conductive ink is ejected into the hole portion.   The pattern forming method according to claim 1, wherein the reaction gas contains oxygen, nitrogen, or fluorine.   The pattern formation method according to claim 1, wherein the hole is a via hole, a contact hole, or a through hole.   The pattern forming method according to claim 1, wherein the hole portion has a diameter that decreases in a thickness direction of the substrate. For the substrate in which the hole is formed, a detection unit for detecting distortion of the substrate,
A gas supply unit for supplying a reaction gas to the hole of the substrate;
An irradiation unit that irradiates the hole with laser light based on irradiation data;
An ejection unit that ejects conductive ink into the hole portion based on droplet ejection data; and
While supplying the irradiation data based on the arrangement information of the hole to the irradiation unit, a data supply unit for supplying the droplet ejection data to the discharge unit,
When distortion is detected on the substrate by the detection unit, first correction data for correcting the irradiation data is created based on the distortion of the substrate, and second droplet correction data is corrected. A correction data creation unit for creating correction data;
While the reactive gas is supplied to the hole of the substrate by the gas supply unit, the laser beam is applied only to the inner surface of the hole by the irradiation unit, and based on the irradiation data when there is no distortion of the substrate. Irradiate and modify the inner surface of the hole by irradiating based on the first correction data if there is distortion of the substrate,
The conductive ink is ejected into the hole by the ejection unit based on the droplet ejection data when the substrate is not distorted, and the second correction data when the substrate is distorted. A pattern forming apparatus for ejecting droplets based on the droplets.   The pattern forming apparatus according to claim 7, wherein a diameter of the laser beam is smaller than a diameter of the conductive ink droplet.   The pattern forming apparatus according to claim 7, wherein the ejection unit ejects the conductive ink into the hole portion in a plurality of times.   The pattern forming apparatus according to claim 7, wherein the reaction gas includes oxygen, nitrogen, or fluorine.   The pattern forming apparatus according to claim 7, wherein the hole is a via hole, a contact hole, or a through hole.   The pattern forming apparatus according to claim 7, wherein the hole portion has a diameter that decreases in a thickness direction of the substrate.

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