JP5386182B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5386182B2 JP5386182B2 JP2009010545A JP2009010545A JP5386182B2 JP 5386182 B2 JP5386182 B2 JP 5386182B2 JP 2009010545 A JP2009010545 A JP 2009010545A JP 2009010545 A JP2009010545 A JP 2009010545A JP 5386182 B2 JP5386182 B2 JP 5386182B2
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- JP
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- Prior art keywords
- light
- transistor
- pixel
- gate
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0261—Improving the quality of display appearance in the context of movement of objects on the screen or movement of the observer relative to the screen
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal Display Device Control (AREA)
Description
本発明の発光装置が有する画素の構成例について、図1を用いて説明する。図1には、本実施の形態の発光装置が有する画素の回路図の一例を示す。
本発明の発光装置が有する、実施の形態1とは異なる画素の構成例について、図6を用いて説明する。図6に、本実施の形態の発光装置が有する画素の回路図の一例を示す。
本実施の形態では、本発明の発光装置の駆動回路の構成例について説明する。図10に、本発明の発光装置のブロック図の一例を示す。
101 発光トランジスタ
102 スイッチング素子
103 スイッチング素子
104 保持容量
105 トランジスタ
106 トランジスタ
200 画素
300 画素
301 発光トランジスタ
302 スイッチング素子
303 スイッチング素子
304 保持容量
305 トランジスタ
306 トランジスタ
400 画素
500 画素部
510 走査線駆動回路
520 走査線駆動回路
530 信号線駆動回路
531 シフトレジスタ
532 記憶回路
533 記憶回路
600 画素部
610 走査線駆動回路
620 走査線駆動回路
630 信号線駆動回路
631 シフトレジスタ
632 サンプリング回路
633 記憶回路
700 基板
701 ゲート電極
702 ゲート絶縁膜
703 ソース電極
704 ドレイン電極
705 半導体層
706 層間絶縁膜
801 トランジスタ
802 発光トランジスタ
803 トランジスタ
804 保持容量
811 導電膜
812 絶縁膜
813 半導体層
814 導電膜
815 導電膜
816 導電膜
817 半導体層
818 導電膜
819 導電膜
820 層間絶縁膜
821 導電膜
822 絶縁膜
823 導電膜
824 導電膜
825 半導体層
5001 筐体
5002 表示部
5003 スピーカー部
5201 本体
5202 筐体
5203 表示部
5204 キーボード
5205 ポインティングデバイス
5401 本体
5402 筐体
5403 表示部
5404 記録媒体(DVD等)読み込み部
5405 操作キー
5406 スピーカー部
6001 基板
6002 画素部
6003 走査線駆動回路
6004 ICチップ
6005 FPC
6006 基板
6101 基板
6102 画素部
6103 走査線駆動回路
6104 ICチップ
6105 FPC
6106 基板
Claims (2)
- 第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、層間絶縁層と、を有し、
前記第1のトランジスタのゲートは、前記第1の配線と電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第3の配線と電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、前記第3のトランジスタのゲートと電気的に接続され、
前記第2のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第3のトランジスタのゲートと電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第4の配線と電気的に接続され、
前記第3のトランジスタのソース又はドレインの一方は、前記第4の配線と電気的に接続され、
前記第3のトランジスタのソース又はドレインの他方は、前記第5の配線と電気的に接続され、
前記第1の配線と、前記第2の配線と、前記第3の配線と、前記第4の配線と、前記第1のトランジスタと、前記第2のトランジスタと、は、前記層間絶縁層の下方に設けられ、
前記第5の配線と、前記第3のトランジスタと、は、前記層間絶縁層の上方に設けられ、
前記第1の配線は、前記第1のトランジスタの導通状態と非導通状態の切り替えを制御する電位を供給することができる機能を有し、
前記第2の配線は、前記第2のトランジスタの導通状態と非導通状態の切り替えを制御する電位を供給することができる機能を有し、
前記第3の配線は、前記第1のトランジスタのソース又はドレインの一方に、ビデオ信号に対応する電位を供給することができる機能を有し、
前記第4の配線は、前記第2のトランジスタのソース又はドレインの他方に、第1の電位を供給することができる機能を有し、
前記第4の配線は、前記第3のトランジスタのソース又はドレインの一方に、前記第1の電位を供給することができる機能を有し、
前記第5の配線は、前記第3のトランジスタのソース又はドレインの他方に、第2の電位を供給することができる機能を有し、
前記第1の電位と前記第2の電位とは異なり、
前記第1のトランジスタは、スイッチングすることができる機能を有し、
前記第2のトランジスタは、スイッチングすることができる機能を有し、
前記第3のトランジスタは、発光することができる機能を有し、
前記第3のトランジスタのゲートに印加される電圧に応じて、前記第3のトランジスタの発光状態が制御されることを特徴とする発光装置。 - 請求項1において、
前記層間絶縁層は、複数の開口を有し、
前記複数の開口によって、前記第2のトランジスタのソース又はドレインの一方と、前記第3のトランジスタのゲートとは、電気的に接続されることを特徴とする発光装置。
Priority Applications (1)
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JP2009010545A JP5386182B2 (ja) | 2008-01-29 | 2009-01-21 | 発光装置 |
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JP2008017188 | 2008-01-29 | ||
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JP2009206505A JP2009206505A (ja) | 2009-09-10 |
JP2009206505A5 JP2009206505A5 (ja) | 2012-01-26 |
JP5386182B2 true JP5386182B2 (ja) | 2014-01-15 |
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US (1) | US8022406B2 (ja) |
EP (1) | EP2085958B1 (ja) |
JP (1) | JP5386182B2 (ja) |
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JP2016139560A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6546400B2 (ja) * | 2015-02-05 | 2019-07-17 | 株式会社ジャパンディスプレイ | 表示装置 |
CN105869574B (zh) * | 2016-06-07 | 2017-03-29 | 京东方科技集团股份有限公司 | 一种像素驱动电路及其驱动方法、阵列基板及显示装置 |
JP6844845B2 (ja) | 2017-05-31 | 2021-03-17 | 三国電子有限会社 | 表示装置 |
JP7190729B2 (ja) * | 2018-08-31 | 2022-12-16 | 三国電子有限会社 | キャリア注入量制御電極を有する有機エレクトロルミネセンス素子 |
JP7246681B2 (ja) | 2018-09-26 | 2023-03-28 | 三国電子有限会社 | トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 |
JP7190740B2 (ja) | 2019-02-22 | 2022-12-16 | 三国電子有限会社 | エレクトロルミネセンス素子を有する表示装置 |
JPWO2020226045A1 (ja) * | 2019-05-09 | 2020-11-12 | ||
JP7444436B2 (ja) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | 液晶表示装置 |
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JP3686769B2 (ja) * | 1999-01-29 | 2005-08-24 | 日本電気株式会社 | 有機el素子駆動装置と駆動方法 |
JP4092857B2 (ja) | 1999-06-17 | 2008-05-28 | ソニー株式会社 | 画像表示装置 |
TW525122B (en) | 1999-11-29 | 2003-03-21 | Semiconductor Energy Lab | Electronic device |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
US6825820B2 (en) | 2000-08-10 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP4906022B2 (ja) | 2000-08-10 | 2012-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型el表示装置及び電子機器 |
JP3800404B2 (ja) | 2001-12-19 | 2006-07-26 | 株式会社日立製作所 | 画像表示装置 |
JP2003255899A (ja) | 2001-12-28 | 2003-09-10 | Sanyo Electric Co Ltd | 表示装置 |
EP1478031A4 (en) * | 2002-02-19 | 2008-12-03 | Hoya Corp | LIGHT EMISSION ELEMENT OF THE FIELD EFFECT TRANSISTOR TYPE |
EP1367659B1 (en) | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
JP4906106B2 (ja) * | 2003-07-14 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR100626036B1 (ko) * | 2004-11-17 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 상기 유기 발광 소자의 제조방법 |
JP2006252774A (ja) | 2005-03-07 | 2006-09-21 | Ricoh Co Ltd | 有機トランジスタ、及びディスプレイ装置 |
JP4914016B2 (ja) | 2005-03-07 | 2012-04-11 | 株式会社リコー | フレキシブルディスプレイ装置 |
US7598518B2 (en) | 2005-03-07 | 2009-10-06 | Ricoh Company, Ltd. | Organic transistor with light emission, organic transistor unit and display device incorporating the organic transistor |
JP2006252775A (ja) | 2005-03-07 | 2006-09-21 | Ricoh Co Ltd | ディスプレイ装置 |
JP2006253162A (ja) | 2005-03-07 | 2006-09-21 | Ricoh Co Ltd | 有機トランジスタ、及びディスプレイ装置 |
JP2006253164A (ja) | 2005-03-07 | 2006-09-21 | Ricoh Co Ltd | 有機トランジスタ、及びディスプレイ装置 |
JP4972727B2 (ja) * | 2005-07-20 | 2012-07-11 | 日本電信電話株式会社 | 有機半導体発光素子およびそれを用いた表示装置、ならびに有機半導体発光素子の製造方法 |
WO2007043696A1 (ja) | 2005-10-14 | 2007-04-19 | Pioneer Corporation | 薄膜半導体素子および表示装置 |
TW200721478A (en) | 2005-10-14 | 2007-06-01 | Pioneer Corp | Light-emitting element and display apparatus using the same |
JP4809670B2 (ja) | 2005-12-02 | 2011-11-09 | 大日本印刷株式会社 | 有機発光トランジスタ素子及びその製造方法並びに発光表示装置 |
JP2009009781A (ja) * | 2007-06-27 | 2009-01-15 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
-
2009
- 2009-01-21 EP EP09000812A patent/EP2085958B1/en not_active Not-in-force
- 2009-01-21 JP JP2009010545A patent/JP5386182B2/ja not_active Expired - Fee Related
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US20090189161A1 (en) | 2009-07-30 |
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EP2085958B1 (en) | 2012-08-01 |
EP2085958A3 (en) | 2010-04-14 |
US8022406B2 (en) | 2011-09-20 |
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