JP5377487B2 - 基板上の薄膜を識別するための方法及び装置 - Google Patents
基板上の薄膜を識別するための方法及び装置 Download PDFInfo
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- JP5377487B2 JP5377487B2 JP2010519929A JP2010519929A JP5377487B2 JP 5377487 B2 JP5377487 B2 JP 5377487B2 JP 2010519929 A JP2010519929 A JP 2010519929A JP 2010519929 A JP2010519929 A JP 2010519929A JP 5377487 B2 JP5377487 B2 JP 5377487B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Description
Claims (7)
- 電子デバイス処理ツール内で基板上の膜を検出するための装置であって、
装置を電子デバイス処理ツールのビューポートに連結するように構成された取付部材と、
取付部材内に配置され且つ電子デバイス処理ツール内で基板を照らすように構成された光エネルギー源と、
追加の光エネルギー源と、
膜の存在を示す波長を通すように構成された光学システムと、
基板で反射して光学システムを通過する光エネルギーを受け取るように位置決めされ、膜の存在又は不在を検知するように構成された光学検出装置と、
基板で反射した光エネルギーを受け取るように配置された追加の光学検出装置とを含み、
取付部材が光エネルギー源を支持するために配置された1以上の開口部を有するベースプレートを含み、
光学システムが拡散チューブのどちらかの端部に配置されたディフューザを有する拡散チューブを含み、
拡散チューブが基板から反射した光エネルギーを光学検出装置に流すための経路を規定し、
追加の光エネルギー源及び追加の光学検出装置が、電子デバイス処理ツール内の基板の存在又は不在を検知するように構成されている装置。 - 取付部材に連結され且つ基板で反射したものではない光エネルギーを光学検出装置に到達させないように構成されたハウジングを更に含む請求項1記載の装置。
- 光学システムが複数のディフューザ及び1つのフィルタを含む請求項1記載の装置。
- 基板上の膜を検出するためのシステムであって、
電子デバイス処理ツールと、
電子デバイス処理ツールのビューポートに連結されるように構成された取付部材と、
取付部材内に配置され且つ電子デバイス処理ツール内の基板を照らすように構成された光エネルギー源と、
追加の光エネルギー源と、
取付部材に連結され且つ膜の存在を示す波長を通すように構成された光学システムと、
基板で反射して光学システムを通過する光エネルギーを受け取るように位置決めされ、膜の存在又は不在を検知するように構成された光学検出装置と、
基板で反射した光エネルギーを受け取るように配置された追加の光学検出装置とを含み、
取付部材が光エネルギー源を支持するために配置された1以上の開口部を有するベースプレートを含み、
光学システムが拡散チューブのどちらかの端部に配置されたディフューザを有する拡散チューブを含み、
拡散チューブが基板から反射した光エネルギーを光学検出装置に流すための経路を規定し、
追加の光エネルギー源及び追加の光学検出装置が、電子デバイス処理ツール内の基板の存在又は不在を検知するように構成されているシステム。 - 取付部材に連結され且つ基板で反射したものではない光エネルギーを光学検出装置に到達させないように構成されたハウジングを更に含む請求項4記載のシステム。
- 光学システムが複数のディフューザ及び1つのフィルタを含む請求項4記載のシステム。
- 電子デバイス処理ツール内に配置された基板上の膜を検出する方法であって、
膜検出装置の取付部材を電子デバイス処理ツールのビューポートに連結し、
取付部材内に配置された光エネルギー源及び追加の光エネルギー源を使用して電子デバイス処理ツール内の基板を照らし、
取付部材に連結された光学システムに膜の存在を示す波長を通過させ、
基板で反射した光エネルギーを受け取り、
光学検出装置及び追加の光学検出装置を使用して、受け取った光エネルギーに基づいて膜の存在又は不在を検知することを含み、
取付部材が光エネルギー源を支持するために配置された1以上の開口部を有するベース
プレートを含み、
光学システムが拡散チューブのどちらかの端部に配置されたディフューザを有する拡散チューブを含み、
拡散チューブが基板から反射した光エネルギーを光学検出装置に流すための経路を規定し、
追加の光エネルギー源及び追加の光学検出装置が、電子デバイス処理ツール内の基板の存在又は不在を検知するように構成されている方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95321207P | 2007-08-01 | 2007-08-01 | |
US60/953,212 | 2007-08-01 | ||
PCT/US2008/009277 WO2009017804A1 (en) | 2007-08-01 | 2008-08-01 | Methods and apparatus for identifying thin films on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010535425A JP2010535425A (ja) | 2010-11-18 |
JP5377487B2 true JP5377487B2 (ja) | 2013-12-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010519929A Active JP5377487B2 (ja) | 2007-08-01 | 2008-08-01 | 基板上の薄膜を識別するための方法及び装置 |
Country Status (6)
Country | Link |
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US (1) | US7835007B2 (ja) |
JP (1) | JP5377487B2 (ja) |
KR (1) | KR101502304B1 (ja) |
CN (1) | CN101779116B (ja) |
TW (1) | TWI398930B (ja) |
WO (1) | WO2009017804A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US8135560B2 (en) * | 2009-01-30 | 2012-03-13 | Applied Materials, Inc. | Sensor system for semiconductor manufacturing apparatus |
NZ605996A (en) * | 2010-06-23 | 2014-06-27 | Gea Process Eng As | A closure element comprising a light source |
JP5456711B2 (ja) * | 2011-03-03 | 2014-04-02 | 住友重機械工業株式会社 | 成膜装置 |
US8649017B2 (en) * | 2011-08-16 | 2014-02-11 | Applied Materials, Inc. | Methods and apparatus for sensing a substrate in a chamber |
EP3722758B1 (en) * | 2012-11-13 | 2023-11-01 | Viavi Solutions Inc. | Portable spectrometer |
WO2017091331A1 (en) * | 2015-11-23 | 2017-06-01 | Applied Materials, Inc. | On-board metrology (obm) design and implication in process tool |
KR102304313B1 (ko) * | 2019-05-07 | 2021-09-23 | 주식회사지엘에스 | 투명필름 센싱장치 |
Family Cites Families (15)
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CA1068371A (en) * | 1975-02-27 | 1979-12-18 | Graham M. Clarke | Circuit arrangements for controlling detector signals in surface inspection systems |
JPS61131455A (ja) * | 1984-11-30 | 1986-06-19 | Canon Inc | ドライエツチング装置のエツチング量検出方法 |
JPS61152017A (ja) * | 1984-12-26 | 1986-07-10 | Hitachi Ltd | エツチングモニタ装置 |
JPS6410249A (en) * | 1987-07-02 | 1989-01-13 | Fujitsu Ltd | Method for detecting resist |
JP2641922B2 (ja) * | 1988-10-26 | 1997-08-20 | 東京エレクトロン株式会社 | 処理装置 |
US5233191A (en) * | 1990-04-02 | 1993-08-03 | Hitachi, Ltd. | Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process |
US5898181A (en) * | 1995-06-30 | 1999-04-27 | Hdi Instrumentation | Thin film optical measurement system |
US20020015146A1 (en) | 1997-09-22 | 2002-02-07 | Meeks Steven W. | Combined high speed optical profilometer and ellipsometer |
US6042995A (en) * | 1997-12-09 | 2000-03-28 | Lucent Technologies Inc. | Lithographic process for device fabrication using a multilayer mask which has been previously inspected |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
JP2000111313A (ja) * | 1998-09-30 | 2000-04-18 | Toshiba Corp | エッチング開始点検出装置、エッチング開始点検出方法及びプラズマエッチング処理装置 |
US6630995B1 (en) * | 1999-09-07 | 2003-10-07 | Applied Materials, Inc. | Method and apparatus for embedded substrate and system status monitoring |
JP2001196353A (ja) * | 2000-01-07 | 2001-07-19 | Hamamatsu Photonics Kk | ビューポート、光源付きビューポート、ビューポートガラス窓の透過状態測定装置、プラズマモニタ装置およびプラズマ処理方法 |
JP3927780B2 (ja) * | 2001-07-18 | 2007-06-13 | 株式会社ルネサステクノロジ | 回路基板の製造方法 |
US7227628B1 (en) * | 2003-10-10 | 2007-06-05 | Kla-Tencor Technologies Corp. | Wafer inspection systems and methods for analyzing inspection data |
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2008
- 2008-08-01 US US12/184,673 patent/US7835007B2/en active Active
- 2008-08-01 CN CN200880101473.3A patent/CN101779116B/zh not_active Expired - Fee Related
- 2008-08-01 KR KR1020107004566A patent/KR101502304B1/ko active IP Right Grant
- 2008-08-01 TW TW097129349A patent/TWI398930B/zh active
- 2008-08-01 WO PCT/US2008/009277 patent/WO2009017804A1/en active Application Filing
- 2008-08-01 JP JP2010519929A patent/JP5377487B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2010535425A (ja) | 2010-11-18 |
WO2009017804A1 (en) | 2009-02-05 |
KR20100064365A (ko) | 2010-06-14 |
TW200913107A (en) | 2009-03-16 |
CN101779116A (zh) | 2010-07-14 |
TWI398930B (zh) | 2013-06-11 |
KR101502304B1 (ko) | 2015-03-13 |
CN101779116B (zh) | 2013-04-24 |
US20090033941A1 (en) | 2009-02-05 |
US7835007B2 (en) | 2010-11-16 |
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