JP5375985B2 - Atmospheric pressure plasma processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma treatment method and apparatus which can check a lighting state of plasma and an irradiation state of plasma after plasma lighting to secure plasma treatment with high reliability when treating an object to be treated with atmospheric plasma. <P>SOLUTION: In the atmospheric pressure plasma treatment method which comprises: supplying a first gas 15 to a predetermined reaction space 11 in the vicinity of an atmospheric pressure; and at the same time, applying a high-frequency voltage to an antenna 13 or an electrode in the vicinity of the reaction space 11 to generate primary plasma 16; and irradiating the generated primary plasma 16 or secondary plasma 21 generated by colliding the primary plasma 16 with a second gas 18 toward a surface 6 to be treated to carry out plasma treatment of the surface 6 to be treated, a dimension of a reflective wave after lighting of the primary plasma 16 is detected, and a state is checked whether the primary plasma 16 is lit by comparing the dimension of the reflective wave with a first predetermined value. <P>COPYRIGHT: (C)2012,JPO&amp;INPIT

Description

The present invention generates a plasma in near atmospheric pressure, the plasma was irradiated to the surface of the object to be treated relates atmospheric pressure plasma treatment MakotoSo location for processing an object to be processed.

  An atmospheric pressure plasma generator generates plasma by applying a high-frequency electric field to a space while flowing a gas such as an inert gas or a mixture of a reactive gas and a reactive gas in a predetermined space. The surface of the object to be processed is irradiated with the plasma generated in this way, and the surface of the object to be processed is cleaned, the resist is removed, the surface is modified, the metal oxide is reduced, and the film is formed. It is known to perform such processing.

  In addition, as an inductively coupled atmospheric pressure plasma generator, a through-hole forming a reaction space is formed in an alumina substrate, which is a dielectric material with good heat dissipation, and a micro antenna is disposed on the substrate, and one end of the through-hole is formed. It is known that a microplasma is blown out from the other end of a through hole by supplying a gas from a gas and applying a high-frequency voltage to a microantenna (see, for example, Patent Document 1). This Patent Document 1 describes that the emission intensity of plasma is measured with a spectroscope. In addition, the matching circuit arranged between the high-frequency power supply and the micro antenna is adjusted so that the reflected wave is close to zero when the plasma is turned on. Along with this, the reflected wave increases, the plasma input power decreases, and the plasma emission intensity decreases. However, it is described that the temperature of the microantenna is stabilized after about 10 minutes and the emission intensity is stabilized.

  In addition, in the ICP analyzer, which is an analyzer using an inductively coupled atmospheric pressure plasma generator, it is difficult to generate a reflected wave after the plasma is ignited, and is adjusted and set to improve the plasma input power efficiency, and a reflected wave is generated. A matching circuit with a function to perform auto-tuning is provided in a state that does not, and since it is easy to generate a plasma lighting error with only that configuration, means for adjusting the capacitance value of the matching circuit to a value suitable for the state before and after lighting is provided Are known (for example, see Patent Document 2).

  In addition, in a capacitively coupled vacuum plasma processing apparatus using parallel plate electrodes instead of an atmospheric pressure plasma generator, a method of detecting plasma emission with a photodetector and a method of generating plasma are used as methods for detecting the generation of plasma. Then, the method of detecting the reflected wave by using the fact that the reflected wave of the input power becomes small is mentioned, and the method using the photodetector requires equipment cost, and the method of detecting the reflected wave is not limited to the generation of plasma. Therefore, there is a problem in that there is a risk of erroneous detection, and a method of detecting a potential difference between a floating potential and a reference potential by providing a floating electrode in a plasma generation space is known (for example, Patent Documents). 3).

Japanese Patent No. 3610688 Japanese Patent Laid-Open No. 10-19882 Japanese Patent Laid-Open No. 7-326489

  By the way, when the atmospheric pressure plasma processing method and apparatus are applied to an actual production process, whether or not the plasma is kept lit even after the plasma is turned on, and the surface of the workpiece is irradiated with the plasma. It is an important request to confirm whether or not it is in a state where it is in the state. This is because when the plasma processing of the surface of the workpiece is automatically performed by the atmospheric pressure plasma head mounted on the robot apparatus, it must be confirmed that the plasma processing is properly performed. This is because non-defective products are generated in large quantities.

  However, as described in Patent Document 1, in the configuration in which the plasma lighting is detected by the photodetector, as pointed out in Patent Document 3, the equipment becomes large and compact so that the atmospheric pressure plasma processing apparatus can be applied. It is difficult to apply to a large space and equipment, and there is a problem that equipment cost is high.

  Further, in the configuration described in Patent Document 2, it is possible to prevent the atmospheric pressure plasma from being turned on. However, after the plasma is turned on, the capacitance value of the matching circuit is automatically tuned so that the reflected wave becomes small. Therefore, if the plasma is extinguished during plasma processing, it cannot be detected promptly, and if it is temporarily extinguished, it cannot be detected at all and appropriate plasma processing is not performed. There is also a problem that it cannot be detected immediately.

  Patent Document 3 describes that plasma lighting is detected by detecting a reflected wave in a parallel plate type vacuum plasma processing apparatus. However, as described in Patent Document 3, there are various methods. It is stated that the plasma lighting state cannot be detected properly because the reflected wave changes due to the reasons described above, and at least in atmospheric pressure plasma, the method for checking the plasma lighting state after plasma lighting is also described. It has not been done.

In view of the above-described conventional problems, the present invention ensures a highly reliable plasma processing by checking the plasma lighting state and plasma irradiation state after plasma lighting when processing an object to be processed with atmospheric pressure plasma. and to provide an atmospheric pressure plasma treatment MakotoSo location capable.

Further, the atmospheric pressure plasma processing apparatus of the present invention supplies the first gas to a predetermined space near the atmospheric pressure and applies a high frequency voltage to the antenna or electrode arranged in the vicinity of the predetermined space to the lighting means. A plasma head for irradiating the surface of the workpiece with the generated primary plasma or the secondary plasma generated by colliding the generated primary plasma with the second gas, and a high-frequency power source for generating a high-frequency voltage A gas supply unit that supplies gas; a matching circuit that is disposed between the high-frequency power source and the antenna or electrode; and that adjusts the reflected power from the antenna or electrode; and a reflected power detection unit that detects the magnitude of the reflected power; The reflected output detected by the reflected power detection means during the plasma irradiation operation is performed in which the surface of the surface to be processed is irradiated with the secondary plasma after the primary plasma is turned on. And a control unit for controlling the high frequency power and a gas supply unit based on is come, the matching circuit, the reflected power is adjusted set to be near zero at the primary plasma lighting state or plasma treatment conditions, The control unit compares the magnitude of the reflected power with a second predetermined value to check whether or not the surface to be processed is irradiated with plasma .

According to this configuration, when processing the object to be processed at atmospheric pressure plasma, it is possible to plasma after the plasma lighting checks whether that remain lit, to ensure reliable plasma processing Can do. The matching circuit is adjusted and set so that the reflected power in the primary plasma lighting state or plasma processing state is close to zero, and the control unit compares the magnitude of the reflected wave with the second predetermined value. When it is confirmed whether or not plasma is irradiated on the surface to be processed, power can be efficiently applied to the antenna or the electrode in the plasma processing state, and the plasma processing state can be confirmed.

Also, control section, when primary plasma the magnitude of the reflected power compared to the first predetermined value to check whether or not lit, the efficiency of power-on for the antenna or electrode with lighting state of primary plasma It is possible to check the lighting state of the plasma.

  In addition, a gas concentration detection unit that detects a gas concentration of the first gas supplied to the predetermined space is provided, and the control unit operates the primary plasma lighting unit after the gas concentration exceeds a predetermined value. Thus, it is possible to light up reliably while minimizing the lighting operation by the lighting means.

  Also, a plasma head for irradiating atmospheric pressure plasma, and a moving means for relatively moving the plasma head and the object to be processed so that the plasma irradiated from the plasma head moves relative to the surface to be processed while facing the surface to be processed. The plasma processing of the surface to be processed of the object to be processed can be efficiently performed while relatively moving the plasma head and the object to be processed.

According to atmospheric pressure plasma treatment MakotoSo location of the present invention, the primary plasma after lighting, the detection whether primary plasma by comparing the magnitude of the reflected power to the first predetermined value is maintained to lit. In addition, when processing the object to be processed with atmospheric pressure plasma, the lighting state of the plasma after plasma lighting can be confirmed, and a highly reliable plasma processing can be ensured.

The perspective view which shows the whole schematic structure of 1st Embodiment of the atmospheric pressure plasma processing apparatus of this invention. The example of the to-be-processed object in the embodiment is shown, (a) is a plan view of a circuit board, (b) is a plan view of a flat panel display. Sectional drawing which shows the plasma head and principal part structure of the embodiment The perspective view of the plasma head of the embodiment Configuration diagram of matching circuit and phase circuit in the same embodiment Flow chart of plasma processing operation of the embodiment Flow chart of plasma irradiation operation in the plasma processing operation Timing chart of plasma processing operation of the embodiment Timing chart of plasma processing operation in second embodiment of atmospheric pressure plasma processing method of the present invention The perspective view which shows the 1st modification structural example of the plasma head applicable to this invention. The perspective view which shows the 2nd modification structural example of the plasma head applicable to this invention. The perspective view which shows the 3rd modification structural example of the plasma head applicable to this invention. The perspective view which shows the 4th modification structural example of the plasma head applicable to this invention. Sectional drawing which shows the 5th modification structural example of the plasma head applicable to this invention. Sectional drawing which shows the 6th modification structural example of the plasma head applicable to this invention.

  Hereinafter, embodiments of an atmospheric pressure plasma processing apparatus of the present invention will be described with reference to FIGS.

(First embodiment)
First, a first embodiment of the atmospheric pressure plasma processing apparatus of the present invention will be described with reference to FIGS.

  As shown in FIG. 1, the atmospheric pressure plasma processing apparatus 1 according to the present embodiment includes a robot apparatus 2 as a moving unit that can move and position in three axial directions. The robot apparatus 2 is configured by attaching a movable head 4 so as to be movable and positioned in a vertical direction (Z-axis direction) to a movable body 3 that can be moved and positioned in two axial directions (XY directions) orthogonal to each other in a horizontal plane. A plasma head 10 is installed on the movable head 4. On the other hand, the workpiece 5 is carried into and out of the movable range of the plasma head 10 by the carry-in / carry-out unit 7 and is positioned and fixed at a predetermined position.

  As shown in FIGS. 2 (a) and 2 (b), the surface 5 to be processed to be subjected to plasma processing is distributed at a plurality of locations. As such an object 5 to be processed, for example, as shown in FIG. 2A, an example of a circuit board 8 in which a land disposition area for mounting an electronic component is the surface to be processed 6 is shown, or as shown in FIG. There are examples of flat panel displays 9 such as liquid crystal panels and plasma display panels in which the anisotropic conductive film is applied to the surface 6 to be processed. Is to do.

  The configuration of the plasma head 10 will be described with reference to FIGS. A coiled antenna 13 is disposed around a cylindrical reaction vessel 12 made of a dielectric material that forms a reaction space 11 having a circular cross section, and a high frequency voltage is applied to the antenna 13 from a high frequency power source 14 to generate a high frequency in the reaction space 11. By applying an electric field and supplying the first inert gas 15 from the upper end 12 a of the reaction vessel 12, the primary plasma 16 is blown out from the lower end 12 b of the reaction vessel 12.

  A cylindrical or rectangular mixed gas container 17 is disposed around the vicinity of the lower end 12b of the reaction container 12, and a plurality of gas supply ports 19 for supplying the mixed gas 18 to the inside are disposed at the upper part of the peripheral wall. . The mixed gas container 17 extends below the lower end 12 b of the reaction container 12, and the lower end open mixed gas in which the primary plasma 16 collides with a portion below the lower end 12 b of the reaction container 12 to generate the secondary plasma 21. Region 20 is formed.

  As the high frequency power supply 14 for supplying a high frequency voltage to the antenna 13, an output frequency band of an RF frequency band represented by 13.56 MHz, a 100 MHz or VHF frequency band, and a microwave frequency band is used. can do. When the RF frequency band, the VHF frequency band, or the microwave frequency band is used, the reflected power from the antenna 13 is adjusted between the high frequency power source 14 and the antenna 13 as shown in FIG. A matching circuit 22 is provided to prevent the input power to the antenna 13 from being reduced by the power.

  As shown in FIG. 5, the matching circuit 22 includes a LOAD side reactance element (variable capacitor in the illustrated example) 23 connected in parallel to the antenna 13 and a TUNE side reactance element connected in series to the antenna 13 (see FIG. 5). In the example shown, the variable capacitor 24 is used. The reactance elements 23 and 24 are both variable capacitors. However, a fixed or variable capacitor or inductance may be used. Preferably, as shown in FIG. 5, a phase circuit 25 is interposed between the matching circuit 22 and the antenna 13 so that the maximum value of the standing wave current amplitude or the standing wave voltage amplitude is obtained. It is preferable that the position of the minimum value is positioned in the vicinity of the antenna 13 so that the input power is efficiently supplied as the current flowing through the antenna 13. In the illustrated example, the phase circuit 25 includes an inductance element 26 interposed between the LOAD-side reactance element 23 and the antenna 13. Of course, the phase circuit 25 includes an inductance element or a capacitor element interposed between the reactance element 23 on the LOAD side and the antenna 13, and a capacitor element or inductance interposed between the reactance element 24 on the TUNE side and the antenna 13. You may comprise with an element. In FIG. 5, L is an inductance component of the antenna 13, and R is a resistance component of the circuit.

  Further, as shown in FIG. 3, between the high frequency power supply 14 and the matching circuit 22, incident power detection means 27 that detects the incident power from the high frequency power supply 14 and reflected power detection means 28 that detects the reflected power from the antenna 13. The detection signal is input to the control unit 31. Further, a gas concentration detection means 29 is disposed in the vicinity of the upper end 12 a of the reaction vessel 12, and the detection signal is also input to the control unit 31.

  Reference numeral 30 denotes a gas supply pipe that supplies the first inert gas 15 to the reaction vessel 12, and is connected to the gas supply unit 33 via the flow rate control unit 32. The gas concentration detection means 29 is disposed at the outlet of the gas supply pipe 30. The gas supply unit 33 includes a first inert gas supply source (not shown) that supplies the first inert gas 15 and a mixed gas that supplies a mixed gas 18 of the second inert gas and the reactive gas. Source (not shown), and each gas outlet is provided with a pressure regulating valve. The flow rate control unit 32 includes a first flow rate control device (not shown) that includes a mass flow controller that controls the flow rate of the first inert gas 15, and a mass flow controller that controls the flow rate of the mixed gas 18. 2 flow rate control devices.

  As the first and second inert gases, a single gas or a plurality of mixed gases selected from argon, neon, xenon, helium, and nitrogen are applied. As the reactive gas, oxygen, air, an oxidizing gas such as CO 2 or N 2 O, a reducing gas such as hydrogen or ammonia, a fluorine-based gas such as CF 4, or the like is applied depending on the type of plasma treatment. Although nitrogen gas is not literally an inert gas, it exhibits a behavior similar to that of the original inert gas in the generation of atmospheric pressure plasma, and can be used in substantially the same manner. The active gas shall contain nitrogen gas based on a broad definition.

  The control unit 31 is based on an operation program or control data stored in advance in a storage unit (not shown), the robot apparatus 2 as a moving unit of the plasma head 10, the high frequency power supply 14, the flow rate control unit 32, and the reaction space. 11 is configured to control the operation of the lighting device 34 for lighting the primary plasma 16.

  A specific example will be described. The inner diameter R1 of the reaction container 12 is 0.8 mm, the inner diameter R2 of the mixed gas container 17 is 5 mm, the distance L1 between the lower end of the mixed gas container 17 and the surface of the workpiece 6 is 1 mm, the reaction container 12 The apparatus has a configuration in which the distance L2 between the lower end of the gas and the lower end of the mixed gas container 17 is 4 mm, the first inert gas 15 uses argon gas and the flow rate is 50 sccm, and the mixed gas supplied into the mixed gas container 17 is And a mixed gas of argon gas (flow rate 500 sccm) as an inert gas and oxygen gas (flow rate 50 sccm) as a reactive gas.

  Next, the plasma processing operation in the above configuration will be described mainly with reference to FIG. 3, the operation flowcharts of FIGS. 6 and 7, and the timing chart of FIG. First, the first inert gas 15 is supplied from the gas supply unit 33 to the reaction space 11 via the flow rate control unit 32 (step S1), and the concentration of the supply gas is detected by the gas concentration detection means 29 (step S2). ), It is determined whether or not the concentration is within a predetermined concentration range (step S3). When the concentration is within the predetermined concentration range, the high frequency power supply 14 is turned on (step S4), and the lighting device 34 is turned on (step S5). .

  Next, the incident power and reflected power are detected by the incident power detection means 27 and the reflected power detection means 28 (step S6), and it is determined whether or not the reflected power is within a predetermined value when the incident power is normal (step S6). S7). Here, as shown in FIG. 8, the matching circuit 22 is adjusted and set in advance so that the reflected power from the antenna 13 becomes substantially zero in a state where the primary plasma 16 is lit in the reaction space 11. . Therefore, since the reflected power is large P2 when the primary plasma 16 is not turned on, the primary plasma 16 is compared with the first predetermined value T1 set between P2 and zero. It can be determined whether or not it is lit. The process returns to step S5 until the primary plasma 16 is turned on to operate the lighting device 34. When the primary plasma 16 is turned on, the lighting device 34 is turned off (step S8).

  Next, in the robot apparatus 2, the plasma head 10 is relatively moved along the processing surface 6 of the processing object 5. In the plasma head 10 of this embodiment, the primary plasma 16 blows out from the reaction space 11 to the mixed gas region 20 and collides with the mixed gas 18, and the plasma develops to generate a secondary plasma 21, and the secondary plasma 21. Is irradiated from the plasma head 10 toward the surface 6 to be processed, and the plasma processing of the surface 6 to be processed is performed (step S9). In the plasma head 10, the secondary plasma 21 can be generated and irradiated by supplying the mixed gas 18 to the mixed gas region 20 while the primary plasma 16 is lit. By stopping the supply, the irradiation of the secondary plasma 21 can be stopped. Details of the plasma irradiation operation will be described later with reference to FIG.

  During this plasma irradiation operation, it is determined whether or not the reflected power is within the first predetermined value T1 (step S10), the primary plasma 16 is maintained in the lighting state, and the reflected power is within the predetermined value T1. When the operation is finished, it is determined whether or not the operation is finished (step S11). When the operation is not finished, the process returns to step S9 to continue the plasma irradiation operation, and when the operation is finished, the operation is finished. On the other hand, if the primary plasma 16 is extinguished during the plasma irradiation operation, the reflected power becomes P2 exceeding the first predetermined value T1, as shown in FIG. Then, the process proceeds to step S12, the extinction of the primary plasma 16 is recognized, the operation of the robot apparatus 2 is immediately stopped (step S13), and an error display is performed (step S14).

  In the plasma irradiation operation, as shown in FIG. 7, the robot head 2 moves the plasma head 10 toward the surface to be processed 6 of the object to be processed 5 (step S <b> 21). It is determined whether or not the irradiation start point is located at one end (step S22), and if not, the process returns to step S21. When the plasma head 10 is positioned at the irradiation start point, the mixed gas 18 is supplied to the mixed gas region 20 to generate the secondary plasma 21, and the secondary plasma 21 is irradiated from the plasma head 10 toward the surface 6 to be processed. The robot apparatus 2 relatively moves the plasma head 10 along the surface 6 to be processed to perform plasma processing on the surface 6 to be processed, and detects incident power and reflected power during that time (step S23).

  Here, in a state in which the surface to be treated 6 is irradiated with the secondary plasma 21, as shown in FIG. 8, the reflected power P1 of about 10% of the incident power is generated, and the reflected power is zero and P1. When the reflected power exceeding the second predetermined value T2 set in between is detected, it is confirmed that the plasma irradiation is properly performed, and when the reflected power remains near zero, the plasma irradiation is performed. It turns out that not. Therefore, it is determined whether or not the detected value of the reflected power is greater than or equal to the second predetermined value T2 (step S24).

  When the detected value of the reflected power is equal to or greater than the second predetermined value T2, it is confirmed that the irradiation operation is normal (step S25), the robot operation is continued (step S26), and the plasma head 10 6 is determined (step S27). When the irradiation end point is not reached, the process returns to step S26, and when the irradiation end point is reached, the mixed gas is reached. 18 is stopped and generation / irradiation of the secondary plasma 21 is stopped (step S28). Thereafter, it is determined whether or not the plasma treatment of all the surfaces to be treated 6 has been completed (step S28). If not completed, the process returns to step S21 to repeat the above operations. It ends as it is.

  On the other hand, if it is determined in step S24 that the reflected power is within the second predetermined value T2, it is recognized that the irradiation operation is abnormal (step S30), and the operation of the robot apparatus 2 is stopped (step S31). An error is displayed (step S32).

  According to the above embodiment, after the primary plasma 16 is turned on, the magnitude of the reflected power from the antenna 13 is compared with the first predetermined value T1, and the reflected power is smaller than the first predetermined value T1. When the primary plasma 16 is kept on and the reflected power is larger than the first predetermined value T1, it can be detected that the primary plasma 16 has been extinguished. Therefore, when the plasma treatment is performed on the surface 6 of the workpiece 5 by the plasma head 10, it can be confirmed whether or not the primary plasma 16 is kept in a lit state. In addition, since the matching circuit 22 is adjusted and set so that the reflected power in the state in which the primary plasma 16 is lit is close to zero, it is possible to improve the input efficiency of the incident power to the antenna 13. Even if the secondary plasma 21 is generated while the primary plasma 16 is turned on, the reflected power is maintained almost zero in a state where the workpiece 5 is not irradiated with the secondary plasma 21. The

  In addition, when the primary plasma 16 is turned on to generate the secondary plasma 21 and the surface to be processed 6 is irradiated with the secondary plasma 21, the reflected power is about one-tenth of the incident power. Since the reflected power is close to zero in a state where it is not properly irradiated, the secondary plasma 21 is appropriately irradiated onto the surface 6 to be processed by comparing the magnitude of the reflected power with the second predetermined value T2. Thus, it is possible to directly detect and confirm whether or not the plasma processing is being performed, and to ensure a highly reliable plasma processing.

  Further, when the primary plasma 16 is turned on, the gas concentration of the first inert gas 15 supplied to the reaction space 11 is detected by the gas concentration detecting means 29, and the light is turned on after the gas concentration becomes a predetermined value or more. Since the primary plasma 16 is lit by the means 34, the lighting can be reliably performed while minimizing the lighting operation by the lighting means 34.

  Further, since only the first inert gas 15 is supplied to the reaction space 11, the primary plasma 16 can be generated easily and reliably, and the primary plasma 16 is reactive with the second inert gas. By causing the mixed gas 18 made of gas to collide with the mixed gas region 20 to which the gas is supplied, the secondary plasma 21 is surely generated and expanded, and accordingly, the reactive gas in the mixed gas 18 is efficient. Therefore, desired plasma treatment can be effectively performed with the secondary plasma 21 having a high plasma density and a temperature lower than that of the primary plasma 16.

(Second Embodiment)
Next, a second embodiment of the atmospheric pressure plasma processing apparatus of the present invention will be described with reference to FIG.

  In the first embodiment, the example is shown in which the matching circuit 22 is adjusted and set so that the reflected power is nearly zero in the state where the primary plasma 16 is generated and the secondary plasma 21 is generated. As shown in FIG. 9, the matching circuit 22 may be adjusted and set so that the reflected power is approximately near zero when the surface 6 to be processed is irradiated with the secondary plasma 21.

  In this case as well, when the primary plasma 16 is turned off after the primary plasma 16 is turned on, the reflected power becomes P2, and it can be detected that the light has been turned off by comparing with the first predetermined value T1. In the state where the plasma 16 is generated and the secondary plasma 21 is generated, the reflected power is P1, and in the state where the secondary plasma 21 is properly applied to the surface 6 to be processed, the reflection from the antenna 13 is performed. When the electric power is in the vicinity of zero, it is possible to directly detect and confirm that plasma processing is being performed properly, and to ensure highly reliable plasma processing. In addition, since the reflected wave in the plasma processing state is close to zero, the power input efficiency can be further improved.

  In the above embodiment, as the plasma head 10, the secondary plasma 21 is generated by colliding the primary plasma 16 generated in the reaction space 11 with the mixed gas 18 in the mixed gas region 20. Although the example which irradiated the process surface 6 and plasma-processed was shown, the structure of the plasma head 10 in this invention is not limited to this. For example, as shown in FIG. 10, the plasma head 10 includes a reaction vessel 12 having a reaction space 11 and an antenna 13, and the generated primary plasma 16 is irradiated onto the surface 6 to be processed. 10 may be applied to detect the reflected power and detect the lighting state and irradiation state of the primary plasma 16.

  Further, the plasma head 10 is not limited to the plasma head 10 in which the inductively coupled primary plasma 16 is generated by applying the high frequency power with the coiled antenna 13 as described above, as shown in FIG. A pair of electrodes 43a and 43b are disposed on both sides of the predetermined space 41 via a dielectric 42, a high frequency voltage is applied between the electrodes 43a and 43b, and a gas (inert gas or It may be configured such that a capacitively coupled plasma 45 is blown out from the other end of the space 41 by supplying a mixed gas 44 of an inert gas and a reactive gas.

  In addition, as shown in FIG. 12, a pair of electrodes 47a and 47b are arranged on the outer periphery of a reaction tube 46 made of a dielectric material with a space in the axial direction, and a high frequency voltage is applied between the electrodes 47a and 47b. It may be configured such that the plasma 45 is blown out from the other end of the reaction tube 46 by supplying the gas 44 from one end of the reaction tube 46. In addition, as shown in FIG. 13, a pair of electrodes 49a and 49b are disposed on the outer periphery of a reaction tube 48 made of a rectangular dielectric material having an elongated cross-sectional shape with a space in the axial direction between the electrodes 49a and 49b. Alternatively, a high frequency voltage may be applied.

  Further, as shown in FIG. 14, an inner electrode 51 is disposed inside a reaction tube 50 made of a dielectric, an outer electrode 52 is disposed on the outer periphery, and a high-frequency voltage is applied between the electrodes 51, 52. It may be configured such that the plasma 45 is generated in the reaction tube 50 by supplying the gas to the gas and then blown out from the outlet 53. Further, as shown in FIG. 15, the tip of the inner electrode 54 is conical, the outer surface of the conical part 55 is covered with a dielectric 56, the outer side is surrounded by a space 57, and the conical part 55. An outer electrode 58 having a blow-out port 60 is disposed opposite to the tip of the gas electrode, and gas is supplied from the gas supply passage 59 formed in the outer electrode 58 into the space 57 and between the inner electrode 54 and the outer electrode 58. Alternatively, a configuration may be adopted in which a high-frequency voltage is applied to the plasma to generate plasma in the space 57 and blow out from the blow-out port 60. Further, various other configurations can be applied as the plasma head 10.

  In each embodiment shown in FIGS. 10 to 15, an inert gas is supplied to a predetermined space near the atmospheric pressure, a high frequency voltage is applied to generate a primary plasma, and the generated primary plasma is supplied with an inert gas. Alternatively, a mixed gas of reactive gas or a reactive gas alone may be mixed to generate secondary plasma, and the reactive gas may be turned into plasma and irradiated toward the surface of the object to be processed. In addition, a mixed gas of inert gas and reactive gas is supplied to a predetermined space near atmospheric pressure, plasma is generated by applying a high-frequency voltage, and the reactive gas that has been made plasma is irradiated toward the surface of the workpiece. You may make it do.

  The present invention is not limited to the above-described embodiment, and can be implemented with a combination of various components shown in each embodiment based on the description of the claims.

According to atmospheric pressure plasma treatment MakotoSo location of the present invention, the primary plasma after lighting, the detection whether primary plasma by comparing the magnitude of the reflected power to the first predetermined value is maintained to lit. It is possible to check the lighting state of the plasma after the plasma is lit when processing the object to be processed with the atmospheric pressure plasma, so that it is effective for the atmospheric pressure plasma processing that requires highly reliable plasma processing. Available.

1 Atmospheric pressure plasma processing equipment 2 Robotic equipment (moving means)
DESCRIPTION OF SYMBOLS 5 To-be-processed object 6 To-be-processed surface 10 Plasma head 11 Reaction space 13 Antenna 14 High frequency power supply 15 1st inert gas (1st gas)
16 Primary plasma 18 Mixed gas (second gas)
DESCRIPTION OF SYMBOLS 21 Secondary plasma 22 Matching circuit 28 Reflected power detection means 29 Gas concentration detection means 31 Control part 34 Lighting means

Claims (4)

A first gas is supplied to a predetermined space near the atmospheric pressure and a high frequency voltage is applied to an antenna or an electrode disposed in the vicinity of the predetermined space to generate primary plasma by the lighting means, and the generated primary plasma or A plasma head that irradiates the surface of the object to be processed with secondary plasma generated by colliding the primary plasma with the second gas, a high-frequency power source that generates high-frequency voltage, a gas supply unit that supplies gas, A matching circuit disposed between the power source and the antenna or electrode to adjust the reflected power from the antenna or electrode, reflected power detection means for detecting the magnitude of the reflected power, and the surface to be treated of the secondary plasma after primary plasma lighting During the plasma irradiation operation in which the plasma treatment is performed by irradiating the light source, the high frequency power source and the gas supply unit are connected based on the magnitude of the reflected output detected by the reflected power detection means. And a Gosuru controller,
The matching circuit is adjusted and set so that the reflected power in the primary plasma lighting state or the plasma processing state is close to zero, and the control unit compares the magnitude of the reflected power with a second predetermined value. An atmospheric pressure plasma processing apparatus for confirming whether or not plasma is irradiated on a surface to be processed . The atmospheric pressure plasma processing apparatus according to claim 1, wherein the control unit compares the magnitude of the reflected power with a first predetermined value to check whether the primary plasma is lit. Gas concentration detection means for detecting the gas concentration of the first gas supplied to the predetermined space is provided, and the control unit operates the primary plasma lighting means after the gas concentration exceeds a predetermined value. The atmospheric pressure plasma processing apparatus according to claim 1 or 2 , wherein the apparatus is an atmospheric pressure plasma processing apparatus. A plasma head for irradiating the atmospheric pressure plasma, and a moving means for relatively moving the plasma head and the object to be processed so that the plasma irradiated from the plasma head moves relative to the surface to be processed while facing the surface to be processed. The atmospheric pressure plasma processing apparatus according to claim 1 , wherein the atmospheric pressure plasma processing apparatus is provided.

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