JP5373607B2 - 細胞をイメージングするための多機能ナノスコピー - Google Patents

細胞をイメージングするための多機能ナノスコピー Download PDF

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JP5373607B2
JP5373607B2 JP2009523015A JP2009523015A JP5373607B2 JP 5373607 B2 JP5373607 B2 JP 5373607B2 JP 2009523015 A JP2009523015 A JP 2009523015A JP 2009523015 A JP2009523015 A JP 2009523015A JP 5373607 B2 JP5373607 B2 JP 5373607B2
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nanoscale
metal
semiconductor
sensor
sensors
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JP2010505088A (ja
JP2010505088A5 (cg-RX-API-DMAC10.html
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ソリン，スチユアート・エイ
ウオリス，カーク・デイ
ウイツクライン，サムエル・エイ
ヒユーズ，マイケル・エス
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ワシントン ユニヴァーシティー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/10—Investigating individual particles
    • G01N15/1031—Investigating individual particles by measuring electrical or magnetic effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1269—Measuring magnetic properties of articles or specimens of solids or fluids of molecules labeled with magnetic beads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N2015/0038—Investigating nanoparticles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Light Receiving Elements (AREA)
JP2009523015A 2006-08-01 2007-07-31 細胞をイメージングするための多機能ナノスコピー Expired - Fee Related JP5373607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82104006P 2006-08-01 2006-08-01
US60/821,040 2006-08-01
PCT/US2007/074864 WO2008115258A2 (en) 2006-08-01 2007-07-31 Multifunctional nanoscopy for imaging cells

Related Child Applications (1)

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JP2013193061A Division JP2014041136A (ja) 2006-08-01 2013-09-18 細胞をイメージングするための多機能ナノスコピー

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JP2010505088A JP2010505088A (ja) 2010-02-18
JP2010505088A5 JP2010505088A5 (cg-RX-API-DMAC10.html) 2011-08-25
JP5373607B2 true JP5373607B2 (ja) 2013-12-18

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JP2013193061A Pending JP2014041136A (ja) 2006-08-01 2013-09-18 細胞をイメージングするための多機能ナノスコピー

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US (3) US8436436B2 (cg-RX-API-DMAC10.html)
EP (4) EP2154540B1 (cg-RX-API-DMAC10.html)
JP (2) JP5373607B2 (cg-RX-API-DMAC10.html)
AU (1) AU2007349279A1 (cg-RX-API-DMAC10.html)
CA (1) CA2659674A1 (cg-RX-API-DMAC10.html)
WO (1) WO2008115258A2 (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041136A (ja) * 2006-08-01 2014-03-06 Washington Univ 細胞をイメージングするための多機能ナノスコピー
US10302474B2 (en) 2017-08-09 2019-05-28 Georg Fischer Signet Llc Insertion ultrasonic sensor assembly
US10620060B2 (en) 2017-07-19 2020-04-14 Georg Fischer Signet, LLC Combined ultrasonic temperature and conductivity sensor assembly

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EP2800970B1 (en) 2012-01-04 2016-09-28 Magnomics, S.A. Monolithic device combining cmos with magnetoresistive sensors
RU2502983C1 (ru) * 2012-08-17 2013-12-27 Игорь Викторович Чеботарь Способ наноскопии
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TWI493402B (zh) * 2013-03-01 2015-07-21 Univ Chung Hua 觸控面板及其製備方法
CN104714672B (zh) 2013-12-11 2019-04-09 昆山工研院新型平板显示技术中心有限公司 压敏型显示屏触控单元、触摸屏及其制造方法
CN104330020A (zh) * 2014-11-14 2015-02-04 国家电网公司 钢梁弯曲度传感器
JP6239562B2 (ja) * 2015-09-14 2017-11-29 株式会社東芝 照明デバイスおよびそれを備えるバイオ情報計測装置
CN109141278A (zh) * 2018-07-20 2019-01-04 广州市康超信息科技有限公司 一种输送带的三维感应装置及其检测方法
CN115980174B (zh) * 2022-09-09 2025-08-08 西安电子科技大学 金属构件腐蚀减薄缺陷检测探头及定量评估方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041136A (ja) * 2006-08-01 2014-03-06 Washington Univ 細胞をイメージングするための多機能ナノスコピー
US10620060B2 (en) 2017-07-19 2020-04-14 Georg Fischer Signet, LLC Combined ultrasonic temperature and conductivity sensor assembly
US10302474B2 (en) 2017-08-09 2019-05-28 Georg Fischer Signet Llc Insertion ultrasonic sensor assembly

Also Published As

Publication number Publication date
JP2010505088A (ja) 2010-02-18
US20090326337A1 (en) 2009-12-31
EP2049341A2 (en) 2009-04-22
EP2527852A2 (en) 2012-11-28
WO2008115258A3 (en) 2009-05-22
EP2527853A2 (en) 2012-11-28
US8637944B2 (en) 2014-01-28
EP2527853A3 (en) 2014-09-17
AU2007349279A1 (en) 2008-09-25
JP2014041136A (ja) 2014-03-06
US20130234740A1 (en) 2013-09-12
EP2154540A3 (en) 2010-05-05
EP2049341B1 (en) 2013-07-03
WO2008115258A2 (en) 2008-09-25
US20140197855A1 (en) 2014-07-17
US8436436B2 (en) 2013-05-07
EP2154540B1 (en) 2014-12-31
EP2049341A4 (en) 2010-03-31
EP2154540A2 (en) 2010-02-17
EP2527852A3 (en) 2014-08-20
US9453809B2 (en) 2016-09-27
CA2659674A1 (en) 2008-09-25

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