JP5369319B2 - マイクロリソグラフィ投影露光装置の照明システム - Google Patents

マイクロリソグラフィ投影露光装置の照明システム Download PDF

Info

Publication number
JP5369319B2
JP5369319B2 JP2009518757A JP2009518757A JP5369319B2 JP 5369319 B2 JP5369319 B2 JP 5369319B2 JP 2009518757 A JP2009518757 A JP 2009518757A JP 2009518757 A JP2009518757 A JP 2009518757A JP 5369319 B2 JP5369319 B2 JP 5369319B2
Authority
JP
Japan
Prior art keywords
illumination system
light
strips
optical element
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009518757A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009544146A (ja
JP2009544146A5 (enExample
Inventor
ダミアン フィオルカ
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2009544146A publication Critical patent/JP2009544146A/ja
Publication of JP2009544146A5 publication Critical patent/JP2009544146A5/ja
Application granted granted Critical
Publication of JP5369319B2 publication Critical patent/JP5369319B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G02B27/4222—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant in projection exposure systems, e.g. photolithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4261—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element with major polarization dependent properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Polarising Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009518757A 2006-07-15 2007-07-05 マイクロリソグラフィ投影露光装置の照明システム Expired - Fee Related JP5369319B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006032878.7 2006-07-15
DE102006032878A DE102006032878A1 (de) 2006-07-15 2006-07-15 Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage
PCT/EP2007/005943 WO2008009353A1 (de) 2006-07-15 2007-07-05 Beleuchtungssystem einer mikrolithographischen projektionsbelichtungsanlage

Publications (3)

Publication Number Publication Date
JP2009544146A JP2009544146A (ja) 2009-12-10
JP2009544146A5 JP2009544146A5 (enExample) 2010-08-19
JP5369319B2 true JP5369319B2 (ja) 2013-12-18

Family

ID=38536021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518757A Expired - Fee Related JP5369319B2 (ja) 2006-07-15 2007-07-05 マイクロリソグラフィ投影露光装置の照明システム

Country Status (5)

Country Link
US (1) US20090115991A1 (enExample)
EP (1) EP2041625B1 (enExample)
JP (1) JP5369319B2 (enExample)
DE (1) DE102006032878A1 (enExample)
WO (1) WO2008009353A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US9116303B2 (en) * 2010-03-05 2015-08-25 Canon Kabushiki Kaisha Hologram with cells to control phase in two polarization directions and exposure apparatus
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
DE102011085334A1 (de) * 2011-10-27 2013-05-02 Carl Zeiss Smt Gmbh Optisches System in einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0967524A3 (en) * 1990-11-15 2000-01-05 Nikon Corporation Projection exposure method and apparatus
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
JP3985346B2 (ja) * 1998-06-12 2007-10-03 株式会社ニコン 投影露光装置、投影露光装置の調整方法、及び投影露光方法
DE19829612A1 (de) * 1998-07-02 2000-01-05 Zeiss Carl Fa Beleuchtungssystem der Mikrolithographie mit Depolarisator
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
JP3927753B2 (ja) * 2000-03-31 2007-06-13 キヤノン株式会社 露光装置及びデバイス製造方法
DE10124474A1 (de) * 2001-05-19 2002-11-21 Zeiss Carl Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens
JP2003090978A (ja) * 2001-09-17 2003-03-28 Canon Inc 照明装置、露光装置及びデバイス製造方法
EP1367446A1 (en) * 2002-05-31 2003-12-03 ASML Netherlands B.V. Lithographic apparatus
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
WO2005024516A2 (de) * 2003-08-14 2005-03-17 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
TWI569308B (zh) * 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
WO2005050325A1 (en) * 2003-11-05 2005-06-02 Carl Zeiss Smt Ag Polarization-optimizing illumination system
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
JP4497968B2 (ja) * 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
US7324280B2 (en) * 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
JP2006005319A (ja) 2004-06-21 2006-01-05 Canon Inc 照明光学系及び方法、露光装置及びデバイス製造方法
US7548370B2 (en) * 2004-06-29 2009-06-16 Asml Holding N.V. Layered structure for a tile wave plate assembly
JP2006196715A (ja) * 2005-01-13 2006-07-27 Nikon Corp 光束変換素子、照明光学装置、露光装置、および露光方法
JP2006269462A (ja) * 2005-03-22 2006-10-05 Sony Corp 露光装置および照明装置
US7317512B2 (en) * 2005-07-11 2008-01-08 Asml Netherlands B.V. Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method
US20070058151A1 (en) * 2005-09-13 2007-03-15 Asml Netherlands B.V. Optical element for use in lithography apparatus and method of conditioning radiation beam
US7525642B2 (en) * 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP2009544146A (ja) 2009-12-10
EP2041625B1 (de) 2012-06-27
EP2041625A1 (de) 2009-04-01
DE102006032878A1 (de) 2008-01-17
WO2008009353A1 (de) 2008-01-24
US20090115991A1 (en) 2009-05-07

Similar Documents

Publication Publication Date Title
US8724086B2 (en) Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation
US7408616B2 (en) Microlithographic exposure method as well as a projection exposure system for carrying out the method
KR101425700B1 (ko) 마이크로리소그래피 투영 노광 장치의 조명 시스템
US6535273B1 (en) Microlithographic illumination system with depolarizer
US7782443B2 (en) Illumination system of a microlithographic projection exposure apparatus
US20140307242A1 (en) Method and apparatus for printing periodic patterns using multiple lasers
KR20060118517A (ko) 마이크로리소그라피 투사 조명 장치용 광학적 효과의 편광지연 시스템
US20060221453A1 (en) Fly's eye condenser and illumination system therewith
US8035803B2 (en) Subsystem of an illumination system of a microlithographic projection exposure apparatus
KR20140069152A (ko) 조명 광학 장치, 광학계 유닛, 조명 방법, 및 노광 방법 및 장치
WO2005010963A1 (ja) 照明光学装置、露光装置および露光方法
US8437058B2 (en) Computer generated hologram and exposure apparatus to suppress an illumination variation and loss in light
JP5369319B2 (ja) マイクロリソグラフィ投影露光装置の照明システム
US9720327B2 (en) Optical system of a microlithographic projection exposure apparatus
JP5846471B2 (ja) 偏光影響光学装置及びマイクロリソグラフィ投影露光装置の光学系
KR20060123589A (ko) 마이크로리소그래피 투영 노광 장치용 조명 시스템
JP5216885B2 (ja) ホログラム及び露光装置
JP2002057098A (ja) 照明光学装置，該照明光学装置を備えた露光装置，及びマイクロデバイスの製造方法
JP5861897B2 (ja) マイクロリソグラフィ投影露光装置のための光学系
JP2006269462A (ja) 露光装置および照明装置
US20140268085A1 (en) Optical system for a microlithographic projection exposure apparatus

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100624

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100624

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120319

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120619

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120626

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120719

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130325

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130620

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130722

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130821

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130828

R150 Certificate of patent or registration of utility model

Ref document number: 5369319

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees