JP5364242B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5364242B2
JP5364242B2 JP2007113778A JP2007113778A JP5364242B2 JP 5364242 B2 JP5364242 B2 JP 5364242B2 JP 2007113778 A JP2007113778 A JP 2007113778A JP 2007113778 A JP2007113778 A JP 2007113778A JP 5364242 B2 JP5364242 B2 JP 5364242B2
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JP
Japan
Prior art keywords
film
substrate
molybdenum
insulating film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2007113778A
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English (en)
Japanese (ja)
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JP2007318105A5 (enExample
JP2007318105A (ja
Inventor
純矢 丸山
安弘 神保
博信 小路
秀明 桑原
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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Priority to JP2007113778A priority Critical patent/JP5364242B2/ja
Publication of JP2007318105A publication Critical patent/JP2007318105A/ja
Publication of JP2007318105A5 publication Critical patent/JP2007318105A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Details Of Aerials (AREA)
JP2007113778A 2006-04-28 2007-04-24 半導体装置の作製方法 Expired - Fee Related JP5364242B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007113778A JP5364242B2 (ja) 2006-04-28 2007-04-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006126708 2006-04-28
JP2006126708 2006-04-28
JP2007113778A JP5364242B2 (ja) 2006-04-28 2007-04-24 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013162255A Division JP5651747B2 (ja) 2006-04-28 2013-08-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2007318105A JP2007318105A (ja) 2007-12-06
JP2007318105A5 JP2007318105A5 (enExample) 2010-04-02
JP5364242B2 true JP5364242B2 (ja) 2013-12-11

Family

ID=38851653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007113778A Expired - Fee Related JP5364242B2 (ja) 2006-04-28 2007-04-24 半導体装置の作製方法

Country Status (1)

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JP (1) JP5364242B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
KR101394541B1 (ko) 2008-06-05 2014-05-13 삼성디스플레이 주식회사 유기 박막트랜지스터, 그의 제조방법 및 이를 구비한유기발광표시장치
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101667909B1 (ko) * 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
TWI567829B (zh) 2008-10-31 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP5587592B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
TWI574423B (zh) 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
TWI501319B (zh) 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101876473B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8816425B2 (en) * 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102072803B1 (ko) * 2013-04-12 2020-02-04 삼성디스플레이 주식회사 박막 반도체 장치 및 유기 발광 표시 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP4836445B2 (ja) * 2003-12-12 2011-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20070194379A1 (en) * 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
JP2005354036A (ja) * 2004-05-14 2005-12-22 Toppan Printing Co Ltd 半導体装置の形成方法
JP2005354035A (ja) * 2004-05-14 2005-12-22 Toppan Printing Co Ltd 半導体装置の形成方法
JP5041681B2 (ja) * 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4749074B2 (ja) * 2004-07-30 2011-08-17 株式会社半導体エネルギー研究所 Ｉｃチップの作製方法及び装置

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Publication number Publication date
JP2007318105A (ja) 2007-12-06

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