JP5352710B2 - Electro-optic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide scattering structure of a reflective electrode without increasing the number of mask sheets in a manufacturing process for an electro-optical device. <P>SOLUTION: A photosensitive resin film is used as an interlayer film. Contact holes 103 to 106 are formed by executing patterning by exposure through a first translucent part 101 of a photo mask 100. A photosensitive resin film becomes resolution-impossible when exposed through a second translucent part 102 of the photo mask 100, and irregularity is generated on a surface of the photosensitive resin film. The contact holes are formed and scattering structure having the irregularity on a surface of the interlayer film is obtained by one sheet of the photo mask in this manner. <P>COPYRIGHT: (C)2012,JPO&amp;INPIT

Description

The present invention relates to an electro-optical device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a method for manufacturing the same. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel and an electronic apparatus in which such an electro-optical device is mounted as a component.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

In this specification, an element substrate is a thin film transistor (hereinafter referred to as TFT),
It refers to all substrates on which active circuits such as MOS transistors are provided.

2. Description of the Related Art In recent years, attention has been focused on a technique for forming a TFT using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface. TFTs are widely applied to electronic devices such as ICs and electro-optical devices, and are particularly urgently developed as switching elements for liquid crystal display devices.

In a liquid crystal display device, in order to obtain a high-quality image, an active matrix liquid crystal display device using a TFT as a switching element in which reflective electrodes are arranged in a matrix and connected to each of the reflective electrodes has attracted attention.

Active matrix liquid crystal display devices are roughly classified into two types, a transmission type and a reflection type.

In particular, the reflective liquid crystal display device has the advantage that it consumes less power because it does not use a backlight as compared with the transmissive liquid crystal display device, and is a direct-view display for mobile computers and video cameras. Demand for displays is increasing.

As a method for enlarging the viewing angle characteristics of a reflective liquid crystal display device, there is a method in which light is scattered by attaching a backscattering film to the liquid crystal display device. However, the method of enlarging the viewing angle using a backscattering film tends to cause blurring of the image due to scattering of light having image information reflected by the reflective electrode, and visibility is lowered.

As another method of expanding the viewing angle of the reflective liquid crystal display device, the surface of the organic resin film formed on the element substrate is made uneven, and a reflective electrode is formed thereon to scatter light. There is a structure. As an example of a method for forming irregularities on the surface of the organic resin film, a TFT (not shown) including an active layer, a gate insulating film, a gate electrode, and a source electrode and a drain electrode connected to a semiconductor layer is formed as shown in FIG. The resist film 201 is patterned on the substrate 200 thus formed to form irregularities. An organic resin film 202 is formed on the resist film 201, and the reflective electrode 20
3 is formed so as to be electrically connected to the drain electrode of the TFT. Thereby, the reflective electrode 2
The surface of 03 is uneven (Japanese Patent Laid-Open No. 10-319422).

Further, another example of a method for forming irregularities on the surface of the organic resin film formed on the element substrate is shown below. As shown in FIG. 15, an organic resin film 205 is formed on a substrate 204 on which a TFT (not shown) including a source electrode and a drain electrode connected to a semiconductor layer, a gate insulating film, a gate electrode, and an active layer is formed (FIG. 15). 15 (A)). Then, a contact hole 206 that reaches the drain electrode (not shown) and penetrates the organic resin film 205 is formed (FIG. 15B). Further, a resist film 207 is formed at a predetermined position on the organic resin film (FIG. 15C). Then, the organic resin film 205 is etched using the resist film as a mask to form irregularities on the surface of the organic resin film (FIG. 15D). Further, a reflective electrode 208 is formed on the organic resin film 205. The reflective electrode 208 is in contact with the drain electrode of the TFT. Thereby, unevenness is selectively formed on a part of the surface of the reflective electrode 208 (FIG. 15E).

As described above, by forming irregularities on the surface of the reflective electrode and controlling and optimizing the irregular shape according to the process conditions, the angle at which light is scattered by the irregularities on the surface of the reflective electrode can be controlled, and an image with good visibility It becomes.

In the prior art, it is necessary to add a patterning step of the resist film 201 in order to create a scattering structure having irregularities on the surface of the reflective electrode 203 in the reflective liquid crystal display device as shown in FIG.

In FIG. 15, a contact hole 206 penetrating the organic resin film is formed (FIG. 15B).
Further, unevenness is formed on the surface of the organic resin film by patterning (FIG. 15D). However, in this method, it is necessary to add a patterning step for forming irregularities on the surface of the organic resin film.

In order to manufacture a liquid crystal display device at a reduced manufacturing cost, it is desirable that the reflective electrode surface has a scattering structure with unevenness without increasing the number of steps for manufacturing a conventional liquid crystal display device.

The present invention is characterized in that without increasing the number of steps of a conventional liquid crystal display device, irregularities are produced on the surface of an organic resin film, a reflective electrode is formed on the organic resin film, and a scattering structure is formed by the reflective electrode. To do. To this end, the present invention is characterized in that a photosensitive resin film is used as an interlayer film and a contact hole penetrating the photosensitive resin film is formed, and at the same time, irregularities are formed on a part of the surface of the photosensitive resin film. .

The present invention will be described with reference to FIG. FIG. 1 shows a photosensitive resin film as an interlayer film (for example, a second interlayer film 462).
It is a process that can be applied when used as a). Examples of such an interlayer film include photosensitive polyimide and photosensitive acrylic. In the present invention, a positive type can be used as the photosensitive resin film, and a negative type can also be used. In FIG. 1, the photosensitive resin film is described as a positive type. In the positive type photosensitive resin, the portion irradiated with light is dissolved in the developer.

As shown in FIG. 1A, the present invention includes a step of forming semiconductor layers 405 to 406, a step of forming an insulating first interlayer film 461 that selectively covers the semiconductor layer, Forming a photosensitive resin film 462 over the interlayer film. Thereafter, the photosensitive resin film is patterned, and the first opening 10 having a depth reaching the first interlayer film 461 in the photosensitive resin film.
A first region 117 having 3 to 106 is formed, and a second region 107 having irregularities is formed on the surface of the photosensitive resin film. The photosensitive resin film is cured by heating to 200 ° C. to 400 ° C. Next, as shown in FIG. 1B, the first interlayer film 461 in contact with the first openings 103 to 106 is selectively removed, and the second openings 108 to reach the semiconductor layers 405 to 406. 111 is formed. When forming the second opening, the first interlayer film 461 may be etched using the photosensitive resin film as a mask. Next, an electro-optical device is manufactured by forming a reflective electrode 470 that covers the second region 107 as shown in FIG.

According to the present invention, it is possible to penetrate the contact hole in the photosensitive resin film in one photolithography process and form the unevenness on the surface of the photosensitive resin film. A reflective electro-optical device is manufactured by forming the reflective electrode 470 so as to cover the contact hole and the unevenness of the surface of the photosensitive resin film.

In the present invention, a photomask 100 formed of a thin film of chromium (Cr) or the like as a light shielding portion 108 on a quartz glass 109 is used. The photomask includes a first light transmitting portion 101 and a second light transmitting portion 1.
02 is provided. The portion of the photosensitive resin film exposed by the light transmitted from the first light transmitting portion 101 is dissolved in the developer in the developing process. Then, the first interlayer film 46 is developed by development.
The first region 117 having the first openings 103 to 106 having a depth reaching the top of the first region 117 is formed. The first openings 103 to 106 serve as contact holes that penetrate the photosensitive resin.
The second light transmitting portion 102 of the photomask 100 has such a width that the photosensitive resin film cannot be resolved. Therefore, only the vicinity of the surface of the photosensitive resin film of the photosensitive resin film exposed by the light transmitted through the second light transmitting portion is dissolved in the developer even in the development process. And the 2nd area | region 107 which has an unevenness | corrugation is formed in the surface of the photosensitive resin film.

In the present invention, as shown in FIG. 1C, the reflective electrode covering the second region 107 has a plurality of irregularities 113 reflecting the shape of the second region 107. Good viewing angle characteristics, and
In order to prevent the light reflected by the unevenness of the surface of the reflective electrode from entering the glass substrate of the liquid crystal panel at an angle exceeding the critical angle and confining the light in the liquid crystal panel due to total reflection,
The angle formed by the surface of the reflective electrode and the substrate surface that is in contact with the inclined surface of the convex portion 114 of the plurality of irregularities 113 is 1 °
It is good to set it as 45 degrees or less and desirably 5 degrees or more and 15 degrees or less.

In the present invention, the steps of forming the semiconductor layers 405 to 406 as shown in FIG. 8, the step of forming the first interlayer film 461 above the semiconductor layer, and the photosensitive resin on the first interlayer film 461 are performed. Membrane 4
62, exposing the photosensitive resin film using a photomask 120, developing the photosensitive resin film, and first openings 103 to 106 penetrating the photosensitive resin film.
And a step of simultaneously forming a first region 121 having a second region 122 having a plurality of recesses 118 on the surface of the photosensitive resin film. The width of the second light transmitting portion 102 is made smaller than the width of the first light transmitting portion 101 of the photomask 120. When the width of the second light transmitting portion is reduced, the photosensitive resin film cannot be resolved, and a recess is formed on the surface of the photosensitive resin film. In the photosensitive resin film after development, the ratio of the smooth surface parallel to the substrate surface in the pixel portion is preferably 50% or less, preferably 30% or less of the area of the pixel portion (FIG. 8A). Next, the photosensitive resin film is cured, and the insulating film in contact with the first opening is selectively removed to form a second opening reaching the semiconductor layer (FIG. 8B). Then, a reflective electrode 470 that covers the concave portion 118 of the second region 122 is formed (FIG. 8C).

The surface in contact with the bottom of the recess 119 on the surface of the reflective electrode 470 is at least 1 ° and 45 with respect to the substrate surface.
The angle is preferably 5 ° or more and 15 ° or less. 8 and 1, the same numerals indicate the same elements.

Here, the principle that the photosensitive resin film patterned under the condition below the resolution limit remains on the first interlayer film, and the unevenness is formed on the surface of the photosensitive resin film is shown in FIGS. FIG.
At 0, the light shielding part 300 and the light transmitting part 301 of the photomask are shown. FIG.
10B and FIG. 10C, the width of the light transmitting portion 301 of the photomask is sequentially increased. As the width of the light transmitting portion 301 of the photomask becomes smaller, the diffraction becomes more prominent, and the proportion of ± 1st order diffracted light is larger than the 0th order transmitted light through which light perpendicularly incident on the photomask passes straight. Become. For this reason, the exposure energy of 0th-order transmitted light is relatively reduced, and the energy is insufficient to expose the lower part of the photosensitive resin film. As shown in the intensity distribution 303 of the exposure energy applied to the photosensitive resin film 302, the maximum value of the exposure energy decreases as the light transmitting portion 301 becomes narrower. If the exposure energy does not exceed the threshold value 304, the decomposition reaction or polymerization reaction of the photosensitive resin film due to exposure does not occur.

As a result, when the width of the translucent portion 301 becomes narrow, the exposure energy is insufficient, and only the vicinity of the interface between the photosensitive resin film and the air is exposed. In the developed photosensitive resin film 305, the surface of the photosensitive resin film is exposed. A recess is formed in (FIGS. 10A to 10B). In addition, when the width of the light transmitting portion 301 is sufficiently wide, exposure energy sufficient to form an opening penetrating the photosensitive resin film can be obtained in the photosensitive resin film 305 after development (FIG. 10C). )).

As shown in FIGS. 10A to 10B, as the width of the light transmitting portion 301 becomes narrower, the light transmitted through the photomask by diffraction spreads at a large angle with respect to the normal direction of the surface of the photomask, and exposure is performed. The area increases with respect to the translucent part 301. As a result, the light intensity per unit area irradiated on the photosensitive resin film is weakened. Then, at the interface between the photosensitive resin film and the air, a decomposition reaction or a polymerization reaction occurs by exposure (ultraviolet irradiation), which is shallow in a wide area. That is, as the width of the light transmitting portion 301 is narrower, the concave portion of the photosensitive resin film 305 after development becomes shallower and becomes a gentle shape. By changing the width of the light-transmitting portion 301 and performing exposure, the angle formed by the surface of the substrate that is in contact with the inclined surface of the concave and convex portions formed at the interface between the developed photosensitive resin film 305 and the air and the depth of the concave portion are changed. be able to.

As shown in FIG. 11, when the light transmitting parts 301 adjacent to each other and the light transmitted through the light transmitting parts 301 are at a coherent distance, the intensity distribution 303 of the exposure energy becomes complicated due to the interference between the diffracted lights. The irregular shape formed at the interface between the photosensitive resin film 305 after development and the air can be made irregular. 11, the same elements as those in FIG. 10 are denoted by the same numerals.

In addition, as shown in FIG. 11, when the light transmitting part 301 and the light transmitted through the light transmitting part 301 are at a coherent distance, a portion 3 that is not exposed in the exposure process on the surface of the photosensitive resin film.
As opposed to 07, the vertex of the convex portion 306 may be relatively low.

As shown in FIGS. 10 to 11, by changing the width of the light-transmitting portion 301 and the interval between the light-transmitting portions 301, the height of the uneven protrusion 306 formed on the surface of the photosensitive resin film by exposure, Alternatively, the depth of the recess can be changed. In addition, by changing the width of the translucent part 301 and the interval between the translucent parts 301, the size of the convex part and the angle formed between the surface contacting the inclined surface of the convex part and the substrate surface can be changed. Thereby, the phenomenon in which the light scattered by the unevenness | corrugation of a reflective electrode is spectrally divided by diffraction can be suppressed.

In the present invention, the photosensitive resin is developed by being immersed in a developer. Since the exposed photosensitive resin film isotropically dissolves starting from the interface where the photosensitive resin film and the developer come into contact, the surface unevenness of the photosensitive resin film 305 after development has a large curvature radius of the recess. A gentle shape.

The present invention is effective in a method for manufacturing an active matrix electro-optical device, particularly a reflective liquid crystal display device.

In each of the above configurations, the electro-optical device is characterized in that the reflective electrode is a reflective electrode, and the reflective electrode is a film containing Al or Ag as a main component, or a laminated film thereof.

According to the present invention, in a reflection type electro-optical device, a contact structure of an interlayer film and a scattering structure that scatters light incident on a reflection electrode can be manufactured with a single photomask.

Sectional drawing which shows the manufacturing process of the scattering structure in a reflection type electro-optical apparatus. Sectional drawing of a reflection-type liquid crystal display device. Sectional drawing which shows the manufacturing process of an active matrix substrate. Sectional drawing which shows the manufacturing process of an active matrix substrate. Sectional drawing which shows the manufacturing process of an active matrix substrate. The top view of a pixel part. The top view of a part of photomask. Sectional drawing which shows the manufacturing process of an active matrix substrate. Sectional drawing which shows the manufacturing process of an active matrix substrate. The figure which shows energy distribution of the light which permeate | transmitted the photomask. The figure which shows energy distribution of the light which permeate | transmitted the photomask. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. Sectional drawing which shows the preparation methods of the scattering structure of the conventional reflective electrode. Sectional drawing which shows the preparation methods of the scattering structure of the conventional reflective electrode.

  Embodiments of the present invention will be described below.

An embodiment of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view showing a manufacturing process of an element substrate.

First, the substrate 4 on which the base film, the semiconductor layers 405 to 406, the gate insulating film, and the gate electrode are formed.
In 00, the first interlayer insulating film 461 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm by using a plasma CVD method or a sputtering method. First interlayer insulating film 461
A silicon oxynitride film or an insulating film containing other silicon may be used as a single layer or a laminated structure.

A photosensitive resin film 462 having a function as a second interlayer film is applied over the first interlayer insulating film 461. The thickness of the photosensitive resin film is desirably 0.5 to 3.5 μm. A photosensitive acrylic resin film or a photosensitive polyimide resin film can be used as the photosensitive resin film. In this embodiment, description will be made using a positive photosensitive resin film.

A photomask 100 that exposes a photosensitive resin film is obtained by forming a thin film of chromium (Cr) or the like as a light shielding portion 108 on a quartz glass 109. The first light transmitting portion 101 is for forming a contact hole described later, and is a circle having a diameter of 3.0 to 5.0 μm.

The second light transmitting portion 102 of the photomask 100 is for forming irregularities on the surface of the photosensitive resin film described later. The width of the second translucent part 102 and the interval between the adjacent second translucent parts are appropriately selected, and the photosensitive resin film exposed by the light transmitted through the second translucent part cannot be resolved. To be. The width of the second light transmitting portion 102 of the photomask may be determined by the resolution of the exposure apparatus, the pitch of the light transmitting portions, and the density of the light transmitting portions.
In a mirror projector aligner which is a projection type exposure apparatus, the width of the second light transmitting portion 102 is 2.5 μm or less, preferably 1.5 μm or less.

A photomask 100 is set on a mirror projector aligner which is a projection type exposure apparatus to expose the photosensitive resin film.

Development is performed so that the photosensitive resin film is in contact with the developer.

And the part exposed with the light which permeate | transmitted the 1st translucent part 101 has contact holes 103-106 (1st opening part) which penetrates the photosensitive resin film after developing the photosensitive resin film. Area 121 is formed. A portion exposed by light transmitted through the second light transmitting portion 102 obtains a second region 107 having irregularities on the surface of the photosensitive resin film.

Further, the photosensitive resin film is polymerized by applying heat at 200 to 400 ° C.

Next, as shown in FIG. 1B, the first interlayer film 461 is etched using the photosensitive resin 462 that is the second interlayer film as a mask, so that the contact holes 108 to 111 (second opening portions) are formed.
Get. Since the selectivity in etching differs greatly between the second interlayer film and the first interlayer film, the shape of the uneven protrusion 112 in the second region 107 of the photosensitive resin film is maintained as it is.

Next, as illustrated in FIG. 1C, in the pixel portion 507, a reflective electrode 470, a gate wiring 469, and a connection electrode 468 are formed. The source electrode (433b) is connected to the connection electrode 468.
And 449 are electrically connected to the pixel TFT. In addition, the gate wiring 469
Is electrically connected to the gate electrode of the pixel TFT. In addition, the reflective electrode 470 is electrically connected to the drain region 442 of the pixel TFT, and is further electrically connected to the semiconductor layer 458 functioning as one electrode forming a storage capacitor. The reflective electrode 4
As 70, it is desirable to use a highly reflective material such as a film mainly composed of Al or Ag, or a laminated film thereof. In this example, these wirings are Ti films with a film thickness of 50 nm.
A laminated film of the film and an alloy film having a thickness of 500 nm (alloy film of Al and Ti) is formed by patterning.

In the present embodiment, as shown in FIG. 1C, the reflective electrode 470 has a convex portion 114 on the surface. To improve the viewing angle characteristics, and to prevent the light reflected by the unevenness of the reflective electrode from entering the glass substrate of the liquid crystal panel at an angle exceeding the critical angle and confining the light in the liquid crystal panel due to total reflection. For this purpose, the angle formed between the surface of the reflective electrode in contact with the inclined surface of the convex portion 114 and the substrate surface is set to 1 ° to 45 °, preferably 5 ° to 15 °.

If the surface of the photosensitive resin film is parallel to the substrate surface in the pixel portion, the light incident on the reflective electrode described later will be specularly reflected at that portion. In order to improve the scattering property of the light incident on the reflective electrode, the second transparent portion 102 and the second transparent portion 106 that are adjacent to each other in the photomask 100 are arranged so as to be close to each other, thereby reducing the smooth surface as much as possible. It is desirable to do. Specifically, the ratio of the smooth surface in the pixel portion is desirably 50% or less, desirably 30% or less of the area of the pixel portion.

According to the present invention, a contact hole can be formed in a photosensitive resin film functioning as a second interlayer film with a single photomask, and at the same time, irregularities can be selectively formed on the surface of the photosensitive resin film. . A reflective electrode is formed so as to be in contact with the unevenness selectively formed on the photosensitive resin film, and light incident on the reflective electrode can be scattered by the unevenness on the surface of the reflective electrode. Since a photosensitive resin is used as the second interlayer film, a contact hole that penetrates the photosensitive resin film is formed by only one photolithography process, and unevenness is selectively formed on the surface of the photosensitive resin film. Is possible.

As described above, the pixel portion 507 including the pixel TFT 504 and the storage capacitor 505 can be formed. Thus, the active matrix substrate is completed.

In addition, a method for forming a scattering structure on the surface of the reflective electrode of the present invention may be applied to a method for manufacturing a self-luminous display device using a light-emitting element.

The present invention having the above-described configuration will be described in more detail with the following examples.

In this embodiment, a method for manufacturing a reflective display device will be described with reference to FIGS. Here, a pixel portion on the same substrate and a TFT (n-channel type TFT) of a driver circuit provided around the pixel portion.
A method for simultaneously manufacturing an FT and a p-channel TFT will be described in detail.

A top view of a pixel portion of an active matrix substrate manufactured in this embodiment is shown in FIG. In addition,
The same reference numerals are used for portions corresponding to FIG. 1 and FIGS. Chain line AA in FIG.
'And chain line BB' correspond to the cross-sectional view taken along chain line AA 'and chain line BB' in FIG. A chain line AA ′, a chain line BB ′, and a chain line CC ′ in FIG. 1C are cross sections cut by a chain line AA ′, a chain line BB ′, and a chain line CC ′ in FIG. Corresponds to the figure.

As shown in FIG. 3A, in this embodiment, Corning # 7059 glass or # 1737 is used.
A substrate 400 made of glass such as barium borosilicate glass typified by glass or alumino borosilicate glass is used. Note that the substrate 400 may be a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed.
Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used.

Next, a base film 401 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 400. Although a two-layer structure is used as the base film 401 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. As the first layer of the base film 401, a silicon oxynitride film 401a formed by using a plasma CVD method and using SiH ₄ , NH ₃ , and N ₂ O as a reaction gas is 10 to 200 nm (preferably 50 to
100 nm). In this embodiment, a 50 nm thick silicon oxynitride film 401a (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) is formed. Next, the base film 4
As the second layer of 01, a silicon oxynitride film 401b formed using SiH ₄ and N ₂ O as a reaction gas by a plasma CVD method has a thickness of 50 to 200 nm (preferably 100 to 150).
nm). In this embodiment, a silicon oxynitride film 401 having a thickness of 100 nm is used.
b (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) was formed.

Next, semiconductor layers 402 to 406 are formed over the base film. The semiconductor layers 402 to 406 are
After a semiconductor film having an amorphous structure is formed by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), a known crystallization treatment (laser crystallization method, thermal crystallization method, nickel, etc.) A crystalline semiconductor film obtained by performing a thermal crystallization method using the above catalyst is formed into a desired shape by patterning. The semiconductor layers 402 to 406 have a thickness of 25 to 80 n.
It is formed with a thickness of m (preferably 30 to 60 nm). There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy. In this example, a 55 nm amorphous silicon film was formed by plasma CVD, and then a solution containing nickel was held on the amorphous silicon film. This amorphous silicon film is dehydrogenated (500 ° C., 1 hour), then thermally crystallized (550 ° C., 4 hours), and then laser annealing treatment is performed to improve crystallization. Thus, a crystalline silicon film was formed. Then, semiconductor layers 402 to 406 were formed by patterning the crystalline silicon film using a photolithography method.

Further, after forming the semiconductor layers 402 to 406, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO ₄ laser can be used. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 30 Hz, and the laser energy density is 100 to 400 mJ / cm ² (typically 200 to 300 mJ / cm ^2). ). If a YAG laser is used, the second harmonic is used and the pulse oscillation frequency is 1.
10 kHz, and the laser energy density is 300 to 600 mJ / cm ² (typically 350
˜500 mJ / cm ² ). Then, when the laser beam condensed linearly with a width of 100 to 1000 μm, for example 400 μm, is irradiated over the entire surface of the substrate, the superposition ratio (overlap ratio) of the linear laser light at this time is 80 to 98%. Good.

Next, a gate insulating film 407 covering the semiconductor layers 402 to 406 is formed. The gate insulating film 407 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) with a thickness of 110 nm is formed by plasma CVD. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

When a silicon oxide film is used, TEOS (Tetraethyl O 2) is formed by plasma CVD.
rthosilicate) and O ₂ can be mixed to form a reaction pressure of 40 Pa, a substrate temperature of 300 to 400 ° C., and discharge at a high frequency (13.56 MHz) power density of 0.5 to 0.8 W / cm ² . The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by subsequent thermal annealing at 400 to 500 ° C.

Next, a first conductive film 408 with a thickness of 20 to 100 nm and a second conductive film 409 with a thickness of 100 to 400 nm are stacked over the gate insulating film 407. In this embodiment, the film thickness is 30n.
A first conductive film 408 made of m TaN film and a second conductive film 409 made of W film with a thickness of 370 nm were stacked. The TaN film was formed by sputtering, and was sputtered in a nitrogen-containing atmosphere using a Ta target. The W film was formed by sputtering using a W target. In addition, it can be formed by a thermal CVD method using tungsten hexafluoride (WF ₆ ). In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less. The resistivity of the W film can be reduced by increasing the crystal grains. However, when there are many impurity elements such as oxygen in the W film, the crystallization is hindered and the resistance is increased. Therefore, in this example, high purity W (purity 99.9999
%)), And forming a W film with sufficient consideration so that impurities are not mixed in the gas phase during film formation, a resistivity of 9 to 20 μΩcm can be realized. It was.

In this embodiment, the first conductive film 408 is TaN and the second conductive film 409 is W. However, there is no particular limitation, and all of them are Ta, W, Ti, Mo, Al, Cu, Cr, Nd. You may form with the element selected from these, or the alloy material or compound material which has the said element as a main component.
Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used. Further, the first conductive film is made of tantalum (
Ta) film, the second conductive film is a combination of W film, and the first conductive film is titanium nitride (
TiN) film, the second conductive film is a combination of W films, the first conductive film is a tantalum nitride (TaN) film, and the second conductive film is an Al film combination, A combination in which the conductive film is formed of a tantalum nitride (TaN) film and the second conductive film is a Cu film may be used.

Next, as shown in FIG. 3B, masks 410 to 415 made of a resist film are formed by photolithography, and a first etching process for forming electrodes and wirings is performed. The first etching process is performed under the first and second etching conditions. In this embodiment, an ICP (Inductively Coupled Plasma) etching method is used as the first etching condition, CF ₄ , Cl ₂ and O ₂ are used as etching gases, and the respective gas flow ratios are 25. / 25/10 (sccm), and 500 W R is applied to the coil-type electrode at a pressure of 1 Pa.
F (13.56 MHz) power was applied to generate plasma and perform etching. Here, dry etching equipment using ICP manufactured by Matsushita Electric Industrial Co., Ltd. (Model E645- □ ICP
) Was used. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under this first etching condition so that the end portion of the first conductive layer is tapered.

Thereafter, the masks 410 to 415 made of a resist film are not removed but the second etching conditions are changed, CF ₄ and Cl ₂ are used as etching gases, and the respective gas flow ratios are set to 30/30.
(Sccm), 500 W of RF (13.56 MHz) power was applied to the coil-type electrode at a pressure of 1 Pa, plasma was generated, and etching was performed for about 30 seconds. Substrate side (sample stage)
Also, 20 W of RF (13.56 MHz) power is applied and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. In order to perform etching without leaving a residue on the gate insulating film, 1
It is preferable to increase the etching time at a rate of about 0 to 20%.

In the first etching process, the end of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side by making the shape of the mask made of the resist film suitable. It becomes a shape. The angle of this taper portion is 15 to 45 °. Thus,
A first shape conductive layer 4 comprising a first conductive layer and a second conductive layer by the first etching process.
17 to 422 (first conductive layers 417a to 422a and second conductive layers 417b to 422b) are formed. Reference numeral 416 denotes a gate insulating film, and a region not covered with the first shape conductive layers 417 to 422 is etched and thinned by about 20 to 50 nm.

Then, a first doping process is performed without removing the mask made of a resist film, and an impurity element imparting n-type conductivity is added to the semiconductor layer. The doping process may be performed by ion doping or ion implantation. The condition of the ion doping method is that the dose is 1 × 10 ^{13 to} 5 × 10 ^15.
Atom / cm ² and acceleration voltage of 60-100 keV are performed. In this embodiment, the dose is 1
. The acceleration voltage was set to 5 × 10 ¹⁵ atoms / cm ² and the acceleration voltage was set to 80 keV. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layers 417 to 421 serve as a mask for the impurity element imparting n-type, and the high concentration impurity regions 423 to 427 are formed in a self-aligning manner. An impurity element imparting n-type conductivity is added to the high-concentration impurity regions 423 to 427 in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ atoms / cm ³ .

Next, a second etching process is performed without removing the mask made of the resist film. Here, CF ₄ , Cl _2, and O ₂ are used as the etching gas, and the W film is selectively etched. At this time, the first conductive layers 428b to 433b are formed by the second etching process. on the other hand,
The second conductive layers 417a to 422a are hardly etched, and the second conductive layers 428a are not etched.
˜433a are formed. Next, a second doping process is performed to obtain the state of FIG. Doping is performed using the second conductive layers 417a to 422a as a mask for the impurity element so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. In this manner, impurity regions 434 to 438 overlapping with the first conductive layer are formed. The concentration of phosphorus (P) added to the impurity region has a gentle concentration gradient according to the thickness of the tapered portion of the first conductive layer. Note that in the semiconductor layer overlapping the tapered portion of the first conductive layer, the impurity concentration is slightly lower from the end of the tapered portion of the first conductive layer to the inside, but the concentration is almost the same. . The impurity element is also added to the first impurity regions 423 to 427 to form impurity regions 439 to 443.

Next, as shown in FIG. 4A, a third etching process is performed without removing the mask made of a resist film. In the third etching process, the tapered portion of the first conductive layer is partially etched to reduce a region overlapping with the semiconductor layer. The third etch is
CHF ₃ is used as an etching gas, and a reactive ion etching method (RIE method) is used. By the third etching, first conductive layers 444 to 449 are formed. At this time, the insulating film 416 is also etched to form insulating films 450a to 450d.

By the third etching, impurity regions (LDD regions) 434a to 438a that do not overlap with the first conductive layers 444 to 448 are formed. Impurity region (GOLD region) 4
34b to 438b remain overlapped with the first conductive layers 444 to 448.

Thus, in this embodiment, the impurity concentration in the impurity regions (GOLD regions) 434b to 438b overlapping with the first conductive layers 444 to 448 and the first conductive layers 444 to 44 are increased.
Thus, the difference between the impurity concentration in the impurity regions (LDD regions) 434a to 438a that do not overlap with 8 can be reduced, and the reliability can be improved.

Next, after removing the mask made of the resist film, as shown in FIG. 4B, new masks 452 to 454 made of the resist film are formed, and a third doping process is performed. By this third doping treatment, impurity regions 455 to 460 are formed in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT. The second conductive layers 428a to 432a are used as masks against the impurity element, and an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 455 to 460 are formed by ion doping using diborane (B ₂ H ₆ ). In the third doping process, the semiconductor layer forming the n-channel TFT is covered with masks 452 to 454 made of a resist film. By the first doping process and the second doping process, phosphorus is added to the impurity regions 455 to 460 at different concentrations, and the concentration of the impurity element imparting p-type in each of the regions is 2 ×. 10 ²⁰ 〜2 × 10
^By performing the doping process so as to be ²¹ atoms / cm ³ , there is no problem because it functions as the source region and the drain region of the p-channel TFT. In this embodiment, since a part of the semiconductor layer serving as an active layer of the p-channel TFT is exposed, there is an advantage that an impurity element (boron) can be easily added.

  Through the above steps, impurity regions are formed in the respective semiconductor layers.

Next, the masks 452 to 454 made of a resist film are removed, and the first interlayer insulating film 461 is removed.
Form. The first interlayer insulating film 461 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film with a thickness of 150 nm is formed by a plasma CVD method. Needless to say, the first interlayer insulating film 461 is not limited to the silicon oxynitride film, and an insulating film containing other silicon may be used as a single layer or a stacked structure.

Next, as shown in FIG. 4C, a step of activating the impurity element added to each semiconductor layer is performed. This activation process is performed by a thermal annealing method using a furnace annealing furnace. As the thermal annealing method, it may be performed at 400 to 700 ° C., typically 500 to 550 ° C. in a nitrogen atmosphere having an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less. The activation treatment was performed by heat treatment. In addition to the thermal annealing method, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied.

In this embodiment, at the same time as the activation treatment, nickel used as a catalyst during crystallization is gettered to impurity regions 439, 441, 442, 455, and 458 containing high-concentration phosphorus, and mainly the channel. The nickel concentration in the semiconductor layer that becomes the formation region is reduced. A TFT having a channel formation region manufactured in this manner has a low off-current value and good crystallinity, so that high field-effect mobility can be obtained and good characteristics can be achieved.

In addition, an activation process may be performed before forming the first interlayer insulating film. However, when the wiring material used is weak against heat, it is activated after an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) is formed to protect the wiring and the like as in this embodiment. It is preferable to perform the conversion treatment.

Furthermore, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen to perform a step of hydrogenating the semiconductor layer. In this embodiment, heat treatment was performed at 410 ° C. for 1 hour in a nitrogen atmosphere containing about 3% hydrogen. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the interlayer insulating film. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

In the case where a laser annealing method is used as the activation treatment, it is desirable to irradiate a laser beam such as an excimer laser or a YAG laser after performing the hydrogenation.

Next, as illustrated in FIG. 5A, a photosensitive resin film 462 is formed over the first interlayer insulating film 461 as a second interlayer insulating film. The photosensitive resin film 462 is formed using a spin coating method with a thickness of 0.5 to 3.5 μm. In this embodiment, the film thickness is 0 by spin coating.
. An 8 μm positive photosensitive acrylic resin film was formed.

Next, a manufacturing process of this embodiment will be described with reference to FIGS. As shown in FIG. 1A, the photosensitive resin film 462 is exposed with a photomask 100.
In the photomask, a thin film of chromium (Cr) or the like is formed on the quartz glass 109 as the light shielding portion 108. The shape of the first light transmitting portion 101 of the photomask is a circle having a diameter of 3 μm.

In this embodiment, the second region 107 having irregularities on the surface of the photosensitive resin film is formed using diffraction of light transmitted through the second light transmitting portion 102 in the photomask 100. In order to selectively form the second region 107 on the surface of the photosensitive resin film by diffraction, the second light transmitting portion 102 is used.
Needs to be smaller than the resolution limit of the exposure apparatus. The width of the second light transmitting portion 102 is largely affected by the film thickness of the photosensitive resin film, the resolution of the photosensitive resin film, and the resolution limit of the exposure apparatus. For example, in a mirror projector aligner that is a projection type exposure apparatus. The width of the second light transmitting portion is 2.5 μm or less, preferably 1.5 μm or less.

In this embodiment, the second light transmitting portion 102 is a circle having a diameter of 1.5 μm, and the structure in which the center of the circle of the second light transmitting portion is arranged at the apex of the square is a basic unit in the vertical direction and the horizontal direction. Let it be a lattice pattern in which squares are periodically arranged. The center of the circle of the second translucent part 102 adjacent to each other and the second
The distance between the light transmitting portion 116 and the center of the circle is the shortest length of 2.0 μm.

As the exposure apparatus, a stepper type exposure apparatus, a projection type exposure apparatus or the like can be used.
In the present embodiment, the mirror projector aligner MP manufactured by Canon, which is a projection exposure apparatus.
Exposure is performed by A-600 SUPER.

In the exposure, the substrate 400 is scanned in a constant direction at a constant speed, and ultraviolet light transmitted through the arc-shaped slit is irradiated onto the photosensitive resin film formed on the substrate. The time for irradiating the photosensitive resin film with ultraviolet light is 140 sec in one substrate.

As the developer, an aqueous solution in which tetramethylammonium hydroxide (TMAH) is dissolved and ionized is used. The concentration of TMAH is 2.38%. The development time is 45 seconds.
In this embodiment, a spin development method in which a developer is ejected from a nozzle and applied to the surface of the substrate 400 is used.

A portion of the photosensitive resin film exposed to a predetermined energy or higher by development is dissolved in the developer. Then, a first region 117 having first openings 103 to 106 in the photosensitive resin film.
And a second region having irregularities is formed on the surface of the photosensitive resin film. 1st opening part 103-1
In 06, the photosensitive resin film is resolved, and the interface of the first interlayer film 461 is exposed.

Next, the photosensitive resin film is cured at a temperature of 200 ° C. to 400 ° C. Since the photosensitive resin film is softened by the heat at the time of curing, there is a tendency that the tip of the uneven protrusion 112 formed on the surface of the photosensitive resin film in the second region 107 is rounded by increasing the curing temperature.

Next, the first interlayer film 461 is etched with an aqueous solution in which 1 to 70% of hydrofluoric acid (HF) is dissolved using the photosensitive resin film as a mask to obtain the cross-sectional shape of FIG. As a result, contact holes 108 to 111 reaching the semiconductor layers 405 to 406 are formed.

As shown in FIG. 1C, in the pixel portion 507, the reflective electrode 470, the gate wiring 46, and the like.
9. A connection electrode 468 is formed. The source electrode (433b and 44b) is connected to the connection electrode 468.
9) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT.
The reflective electrode 470 is electrically connected to the drain region 442 of the pixel TFT,
Further, an electrical connection is formed with the semiconductor layer 458 functioning as one electrode forming the storage capacitor. In addition, as the reflective electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.

The cross-sectional shape of the pixel portion will be described below. An angle (referred to as a first taper angle) formed between the inclined surface of the photosensitive resin film in the first openings 103 to 106 and the substrate surface is 30 ° or more and 60 ° or less.
Further, the light transmitted through the second light transmitting portion 102 spreads at a large angle with respect to the normal direction of the photomask by diffraction, and is applied to the photosensitive resin film. Therefore, the second region 10 of the photosensitive resin film
7 is relatively smaller than the first taper angle (referred to as a second taper angle) between the surface that contacts the inclined surface of the uneven first convex portion 112 and the substrate surface. The second taper angle is 2 °
It is desirable that the angle is 50 ° or less. In addition, the angle (referred to as the third taper angle) formed between the surface of the reflective electrode that is in contact with the inclined surface of the second convex portion 114 and the substrate surface (referred to as the third taper angle) is larger than the second taper angle depending on the thickness of the reflective electrode. Slightly smaller. In consideration of light confinement due to total reflection and viewing angle characteristics, the third taper angle is preferably 1 ° to 45 °.
For example, when the projection 114 having a diameter of 1.0 to 2.0 μm is finally formed on the surface of the reflective electrode, the height of the projection 114 is 8 nm to 580 nm, preferably 40 to 270 nm.

A plurality of convex portions 114 at the top of the reflective electrode are schematically shown in the front view of the pixel portion in FIG. Actually, the convex portion 144 and the convex portion 144 on the surface of the reflective electrode are close to each other. The distance between the vertex of the convex portion 144 and the vertex of the convex portion 144 on the surface of the reflective electrode is preferably in the range of 0.5 to 15 μm.
In other words, in order to prevent specular reflection, it is desirable to suppress the formation of a smooth surface by bringing the skirts of the protrusions adjacent to each other close to each other.

In this embodiment, the surface of the photosensitive resin film functioning as the second interlayer film has irregularities, whereby a scattering structure consisting of fine irregularities is formed on the surface of the reflective electrode 470, and light can be scattered. . In addition, the formation of the scattering structure can be performed in the same process as the process of forming the contact hole. In addition, the number of photomasks used in the process of forming contact holes is one, and an increase in the number of photomasks can be suppressed. Contact holes can be formed in a photolithographic process using a photosensitive resin film, and at the same time, unevenness is selectively formed on a part of the surface of the photosensitive resin film, so that the process is compared with the case of using a non-photosensitive interlayer film. The number can be reduced.

In this embodiment, the center of the circle of the second light transmitting portion 102 is a lattice shape arranged at equal intervals in the horizontal direction and the vertical direction. However, in the reflective liquid crystal display device, when light is scattered by the reflective electrode, In order to prevent the light from being dispersed due to the diffraction of the light reflected by the reflective electrode, the shape and the arrangement of the second light-transmitting portion 102 may be irregular to suppress the diffraction.

In order to increase the scattering property, it is preferable that the pixel portion has as few portions as parallel to the substrate surface as much as possible. This is because if the surface of the reflective electrode is smooth, light is specularly reflected at that portion. The interval between the second light-transmitting portions 102 and the second light-transmitting portions 106 adjacent to each other is made as short as 1 to 10 μm, preferably 0.2 to 2 μm, so that the second light-transmitting portions are close to each other. If it arrange | positions, the ratio of the smooth part in a reflective electrode can be decreased.

In addition, a manufacturing process of part of the driver circuit portion and the pixel portion of this embodiment will be described with reference to FIG.
In the drive circuit 506, wirings 463 to 46 that are electrically connected to the impurity regions, respectively.
7 is formed. Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a thickness of 500 nm. In the pixel portion 507, a reflective electrode 470, a gate wiring 469, and a connection electrode 468 are formed. With this connection electrode 468, the source wiring (stack of 433 b and 449) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT. In addition, the reflective electrode 470 is electrically connected to the drain region 442 of the pixel TFT, and is further electrically connected to the semiconductor layer 458 functioning as one electrode forming a storage capacitor. In addition, as the reflective electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.

As described above, a CM composed of an n-channel TFT 501 and a p-channel TFT 502.
A driver circuit 506 including an OS circuit and an n-channel TFT 503, and a pixel TFT 504
The pixel portion 507 including the storage capacitor 505 can be formed over the same substrate. Thus, the active matrix substrate is completed.

The n-channel TFT 501 of the driver circuit 506 includes a channel formation region 471 and a low-concentration impurity region 434b (GOLD region) overlapping with the first conductive layer 444 that forms part of the gate electrode.
, A low concentration impurity region 434a (LDD region) formed outside the gate electrode and a high concentration impurity region 439 functioning as a source region or a drain region. A p-channel TFT 5 which is connected to the n-channel TFT 501 by an electrode 466 to form a CMOS circuit.
02 includes a channel formation region 472, an impurity region 457 overlapping with the gate electrode, an impurity region 458 formed outside the gate electrode, and a high-concentration impurity region 455 functioning as a source region or a drain region. The n-channel TFT 503 includes a channel formation region 473 and a low-concentration impurity region 4 that overlaps with the first conductive layer 446 that forms part of the gate electrode.
36b (GOLD region), a low concentration impurity region 437a (L
DD region) and a high concentration impurity region 441 functioning as a source region or a drain region.

The pixel TFT 504 in the pixel portion includes a channel formation region 474, a low concentration impurity region 437 b (GOLD region) that overlaps with the first conductive layer 447 constituting a part of the gate electrode, and a low concentration impurity region formed outside the gate electrode. 437a (LDD region) and a high concentration impurity region 443 functioning as a source region or a drain region. In addition, an impurity element imparting p-type conductivity is added to each of the semiconductor layers 458 to 460 functioning as one electrode of the storage capacitor 505. The storage capacitor 505 includes electrodes (448 and 4) using the insulating film 451 as a dielectric.
32b) and semiconductor layers 458 to 460.

Further, according to the steps shown in this embodiment, the number of photomasks necessary for manufacturing the active matrix substrate can be five. As a result, the process can be shortened, and the manufacturing cost can be reduced and the yield can be improved.

In this embodiment, a process for manufacturing a reflective liquid crystal display device from the active matrix substrate manufactured in Embodiment 2 will be described below. FIG. 2 is used for the description. 2 is a chain line AA ′ in FIG.
A chain line BB ′ and a chain line CC ′ indicate the active matrix substrate shown in FIG.
, Corresponding to a cross-sectional view cut along a chain line BB ′ and a chain line CC ′.

First, after obtaining the active matrix substrate of FIG. 1C in accordance with Embodiment 1, as shown in FIG. 2, an alignment film 483 is formed on at least the reflective electrode 470 on the active matrix substrate, and a rubbing process is performed. In this embodiment, before forming the alignment film 483, columnar spacers (not shown) for maintaining the distance between the substrates are formed at desired positions by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

Next, a counter substrate 476 is prepared. Next, the colored layers 477 and 47 are formed on the counter substrate 476.
8. A planarizing film 479 is formed. Overlapping the red colored layer 477 and the blue colored layer 478,
A light shielding part is formed. Further, the light shielding portion may be formed by partially overlapping the red colored layer and the green colored layer.

In this embodiment, the active matrix substrate shown in Embodiment 1 is used. Therefore, in FIG. 6 showing a top view of the pixel portion of Embodiment 1, at least the gap between the gate wiring 469 and the reflective electrode 470, the gap between the gate wiring 469 and the connection electrode 468, the connection electrode 468 and the reflective electrode 470.
It is necessary to shield the gap. In this example, the respective colored layers were arranged so that the light-shielding portions formed by the lamination of the colored layers overlapped at the positions where light shielding should be performed, and the counter substrate was bonded.

As described above, the number of steps can be reduced by shielding the gap between the pixels with the light shielding portion formed by the lamination of the colored layers without forming a light shielding layer such as a black mask.

Next, a counter electrode 480 made of a transparent conductive film was formed over the planarization film 479 in at least the pixel portion, an alignment film 481 was formed over the entire surface of the counter substrate, and a rubbing process was performed.

Then, the active matrix substrate on which the pixel portion and the driving circuit are formed and the counter substrate are bonded together with a sealant (not shown). A filler is mixed in the sealing material, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. after that,
A liquid crystal material 482 is injected between both the substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used for the liquid crystal material 482. In this way, the reflection type liquid crystal display device shown in FIG. 2 is completed. If necessary, the active matrix substrate or the counter substrate is divided into a desired shape.
Further, a polarizing plate (not shown) was attached only to the counter substrate. And FPC was affixed using the well-known technique.

Light is scattered by the plurality of convex portions 114 on the surface of the reflective electrode, and the viewing angle characteristics of the reflective liquid crystal display device are expanded.

The liquid crystal display panel manufactured as described above can be used as a display portion of various electronic devices.

An example of the photomask 100 used in the step shown in FIG. 1A of Embodiment 1 is shown in FIG. FIG. 7 shows a top view of a photomask in which a chromium film or the like is selectively disposed as a light shielding portion 108 on the surface of quartz glass.

The present invention can be applied to both a positive photosensitive resin film and a negative photosensitive resin film. Note that this embodiment shows a photomask which is applied when a positive type material is used for the photosensitive resin film 462. When the photosensitive resin film is a positive type, the photosensitive resin film in the portion exposed by the second light transmitting portion 107 dissolves into a concave portion by development.

As shown in FIG. 7, in order to resolve the photosensitive resin film, the first light transmitting portion 101 is preferably a circle having a diameter of 3 μm or more, preferably 5 μm or more.

The second light transmitting portion 102 can be formed into a circle or an ellipse. A plurality of these may be used by changing the diameter of the circle, the length of the major and minor axes of the ellipse, and the ratio of the major and minor axes. Of course, as the shape of the second light transmitting portion 102, not only a circle and an ellipse but also a pattern such as a square, a rectangle, a rhombus, and a polygon may be used singly or in combination to give directivity to the scattering characteristics. As a result, it is sufficient that the photosensitive resin film cannot be resolved by exposure. By applying a plurality of shapes as the second light transmitting part 102, the unevenness formed on the surface of the photosensitive resin film becomes random, and the light reflected by the unevenness on the surface of the reflective electrode is dispersed by diffraction. Can be suppressed.

If the ratio of the light shielding portion 108 to the second light transmitting portion 102 is too large, the proportion of the smooth portion in the pixel portion increases depending on the exposure and development conditions of the photosensitive resin film, and the light incident on the reflective electrode is specularly reflected. Care must be taken because it becomes easier to do.

As a condition for making the photosensitive resin film incapable of resolving, it largely depends on the exposure apparatus. When the exposure is performed by a mirror projector aligner which is a projection type exposure apparatus, the maximum value of the linear distance L that can be taken by the second light transmitting portion 102 shown in FIG. 7 is 2.5 μm or less, preferably 1.5.
It is desirable to set it to μm or less. In this specification, the 1st translucent part 101 or the 2nd translucent part 1
The maximum value of the linear distance L that can be taken by 02 is the first translucent part 101 or the second translucent part 1, respectively.
The width is 02. For example, if the second light transmitting part is an ellipse, the width 102 of the second light transmitting part is the length of the major axis of the ellipse. If the second light transmitting part is a circle, the width 102 of the second light transmitting part is the diameter of the circle.
If the second translucent part is a polygon, the width 102 of the second translucent part takes the maximum value among the diagonal lines of the polygon.

By changing the width of the second light transmitting portion 102, the first region 107 formed after exposure and development is performed.
The film thickness of the photosensitive resin film and the angle formed by the surface in contact with the inclined surface of the projection 112 formed on the surface of the photosensitive resin film and the substrate surface are irregular. And a plurality of convex portions 1 formed on the surface of the photosensitive resin film.
A height difference of 12 can be made.

As an apparatus for exposing the photosensitive resin film, a stepper type exposure apparatus or a projection type exposure apparatus can be used. The width that can be taken by the second light transmitting portion 102 may be determined in accordance with the resolution limit of the exposure apparatus.

Note that this embodiment can be freely combined with any one of Embodiments 1 to 3.

The characteristics of the manufacturing method of the reflection type electro-optical device in this embodiment will be described with reference to FIGS. 9, the same elements as those in FIG. 1 are indicated by the same numerals. In this embodiment, the photomask 123
, An optical thin film 126 is formed on the second light transmitting portion 124. The transmittance of light transmitted through the quartz glass 109 and the optical thin film 126 in the photomask is 10 to 80%, preferably 1
It may be 0 to 60%. In the present embodiment, the energy of the light that exposes the photosensitive resin film is adjusted using the diffraction of the light that has passed through the photomask in the second light transmitting portion 124 and the effect that the transmittance is attenuated by the optical thin film 126. It is a feature.

Differences between the first embodiment and the present embodiment will be described below. In Example 1, as shown in FIG.
The exposure was performed under the condition that the photosensitive resin film could not be decomposed using diffraction. And the 2nd area | region 107 which has an unevenness | corrugation was formed in the surface of the photosensitive resin film. However, in the method of the first embodiment, in order to perform diffraction, it is necessary to narrow the width of the second light transmitting portion 102. For example, in a projection type exposure apparatus, although depending on the resolution of the apparatus, the width of the second light transmitting portion needs to be 2.5 μm or less, preferably 1.5 μm or less.

According to the present embodiment, as shown in FIG. 9, even if the width of the second light transmitting portion 124 is widened, the optical thin film 126 is present, so that the intensity of light for exposing the photosensitive resin film 426 is attenuated. The photosensitive resin film becomes unresolvable. For this reason, even if the width of the second light transmitting portion 124 is equal to the width 101 of the first light transmitting portion, the intensity of the light transmitted through the second light transmitting portion 124 by the optical thin film becomes weak.
As a result, only the surface of the photosensitive resin film 462 causes a chemical reaction of the photosensitive resin film by exposure. By adjusting the transmittance of the second light-transmitting portion with the optical thin film, the range in which the width of the second light-transmitting portion 124 can be selected in the photomask 123 is widened.

A method for simultaneously manufacturing a pixel portion and TFTs (n-channel TFT and p-channel TFT) of a driver circuit provided around the pixel portion on the same substrate has been described in detail in Embodiment 1. Here, only the differences from the first embodiment regarding the manufacturing method of the active matrix substrate will be described in detail.

A top view of a pixel portion of an active matrix substrate manufactured in this embodiment is shown in FIG. In addition,
The same reference numerals are used for portions corresponding to FIG. 9 and FIGS. Chain line AA in FIG.
'And chain line BB' correspond to the cross-sectional view taken along chain line AA 'and chain line BB' in FIG. A chain line AA ′, a chain line BB ′, and a chain line CC ′ in FIG. 9C are cross sections cut by a chain line AA ′, a chain line BB ′, and a chain line CC ′ in FIG. Corresponds to the figure.

By the method shown in Example 1, the semiconductor layers 402 to 406, the gate insulating films 450 to 451,
A gate electrode (consisting of first conductive layers 444 to 449 and second conductive layers 428 to 433) and a first interlayer film 461 are formed, and the shape of FIG. 4C is obtained.

Next, as illustrated in FIG. 5A, a photosensitive resin film 462 is formed over the first interlayer insulating film 461 as a second interlayer insulating film. The photosensitive resin film 462 is applied by using a spin coating method with a thickness of 0.5 to 3.5 μm. In this embodiment, the film thickness is 0 by spin coating.
. An 8 μm positive photosensitive acrylic resin film was applied.

Next, the manufacturing process of this embodiment will be described with reference to FIGS. As shown in FIG. 9A, the photosensitive resin film 462 is exposed with a photomask 123.

As the exposure apparatus, a stepper type exposure apparatus, a projection type exposure apparatus or the like can be used.
In the present embodiment, the mirror projector aligner MP manufactured by Canon, which is a projection exposure apparatus.
Exposure is performed by A-600 SUPER. MPA-600 SUPER uses a mercury lamp as a light source. Mercury lamps emit high-brightness spectral lines such as i-line, g-line, and h-line among emitted spectral lines. MPA-600 SUPER performs exposure with light in which i-line (spectral line near 365 nm), g-line (spectral line near 405 nm), and h-line (spectral line near 436 nm) are mixed.

In the photomask 123, a thin film of chromium (Cr) or the like is formed on the quartz glass 109 as the light shielding portion. The first light transmitting portion 101 of the photomask is a circle having a diameter of 3 μm.

A plurality of circles are arranged in the second light transmitting portion 124 of the photomask as circles having a diameter of 1.5 to 6.0 μm. A pattern in which the centers of the circles of the second translucent part are randomly arranged is used. The distance between the center of the circle of the second light transmitting portion 124 adjacent to each other and the center of the circle of the second light transmitting portion 125 is 8.
0 μm or less.

In addition, an optical thin film 126 is formed so as to cover the second light transmitting portion 124 of the photomask 123. With the optical thin film 126, the transmittance of the second light transmitting portion 124 and the second light transmitting portion 125 may be 10 to 80%, preferably 10 to 60%. It is desirable that the transmittance of the optical thin film 126 is constant in the wavelength range of light for exposing the photosensitive resin film. In this embodiment, the wavelength ranges of i-line, g-line, and h-line, which are high-brightness spectral lines emitted from the light source of the exposure apparatus, are 365 to 436.
Since it is in the range of nm, the transmittance of the optical thin film is 30% in the wavelength range of 365 to 436 nm.
To be.

In the surface of the photosensitive resin film, a predetermined energy is required for the decomposition reaction or the polymerization reaction to occur by exposure. When the transmittance of the optical thin film 126 is too low, a chemical reaction due to exposure does not occur on the surface of the photosensitive resin film. For this reason, the transmittance of the optical thin film 119 is preferably 10% or more.

In order to attenuate the intensity of the light transmitted through the second light transmitting portion by the optical thin film 119 and make the photosensitive resin film unresolvable, the transmittance of the second light transmitting portion 124 is 80% or less, preferably It should be 60% or less.

The optical thin film serves to lower the transmittance. The optical thin film may be adjusted to have a predetermined transmittance by interference by laminating films having different refractive indexes. Also,
A predetermined transmittance may be obtained by utilizing absorption and reflection of a metal film or the like.

The optical thin film 119 may be formed so as to cover not only the second light transmitting portion 108 but also the light shielding portion 108. However, the optical thin film 119 needs to be removed from the first light transmitting portion 101.

In the exposure, the substrate 400 is scanned in a constant direction at a constant speed, and ultraviolet light transmitted through the arc-shaped slit is irradiated onto the photosensitive resin film formed on the substrate. The time for irradiating the photosensitive resin film with ultraviolet light is 140 sec in one substrate.

As the developer, an aqueous solution in which tetramethylammonium hydroxide (TMAH) is dissolved and ionized is used. The concentration of TMAH is 2.38%. The development time is 45 seconds.
In this embodiment, a spin development method in which a developer is ejected from a nozzle and applied to the surface of the substrate 400 is used.

A portion of the photosensitive resin film exposed to a predetermined energy or higher by development is dissolved in the developer. Then, a first region 117 having first openings 103 to 106 in the photosensitive resin film.
And a second region having irregularities is formed on the surface of the photosensitive resin film. 1st opening part 103-1
In 06, the photosensitive resin film is resolved, and the interface of the first interlayer film 461 is exposed.

Next, the photosensitive resin film is cured at a temperature of 200 ° C. to 400 ° C. Since the photosensitive resin film is softened by the heat at the time of curing, when the curing temperature is increased, the tip of the uneven convex portion 127 of the first region 122 of the photosensitive resin film has a rounded shape.

Next, the first interlayer film 461 is etched with an aqueous solution in which 1 to 70% of hydrofluoric acid (HF) is dissolved using the photosensitive resin film as a mask to obtain the cross-sectional shape of FIG. As a result, contact holes 108 to 111 reaching the semiconductor layers 405 to 406 are formed.

As shown in FIG. 9C, in the pixel portion 507, the reflective electrode 470, the gate wiring 46, and the like.
9. A connection electrode 468 is formed. The source electrode (433b and 44b) is connected to the connection electrode 468.
9) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT.
The reflective electrode 470 is electrically connected to the drain region 442 of the pixel TFT,
Further, an electrical connection is formed with the semiconductor layer 458 functioning as one electrode forming the storage capacitor. In addition, as the reflective electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.

The cross-sectional shape of the pixel portion after forming the reflective electrode 470 will be described below. 1st opening part 103-1
The angle (referred to as the first taper angle) formed between the surface of the photosensitive resin film 06 in contact with the inclined surface and the substrate surface is 30 ° or more and 60 ° or less. Further, when the width of the second light transmitting portion 102 is narrower than the width of the first light transmitting portion, a large angle with respect to the normal direction of the photomask due to diffraction of light transmitted through the second light transmitting portion. And spread on the photosensitive resin film. For this reason, the angle (referred to as the second taper angle) formed by the surface of the photosensitive resin film in contact with the inclined surface of the convex portion 127 of the unevenness in the second region 122 and the substrate surface is referred to as compared with the first taper angle. Become smaller. Further, the second light transmitting part 10
Even if the width of 2 is wider than the width of the first light transmitting portion, the transmittance is lowered by the optical thin film 126 formed on the photomask, so that the energy of light during exposure is attenuated, and the photosensitive resin. Only the surface of the film is exposed. However, the light transmitted through the second light transmitting portion is not greatly affected by diffraction and does not spread so much in the normal direction of the photomask. For this reason, the second taper angle tends to increase. Based on the above phenomenon, photomask pattern, optical thin film 1
It is desirable that the second taper angle is 2 ° or more and 50 ° or less by adjusting the transmittance of 26, the exposure condition, and the development condition. In addition, the angle (called the third taper angle) between the surface of the reflective electrode in contact with the inclined surface of the convex portion 128 and the substrate surface (referred to as the third taper angle) is slightly smaller than the second taper angle depending on the thickness of the reflective electrode. Become. The third taper angle is desirably 1 ° or more and 45 ° or less.

As described above, the pixel portion 507 including the pixel TFT 504 and the storage capacitor 505 can be formed. Thus, the active matrix substrate is completed.

The pixel TFT 504 in the pixel portion includes a channel formation region 474, a low concentration impurity region 437 b (GOLD region) that overlaps with the first conductive layer 447 constituting a part of the gate electrode, and a low concentration impurity region formed outside the gate electrode. 437a (LDD region) and a high concentration impurity region 443 functioning as a source region or a drain region. In addition, an impurity element imparting p-type conductivity is added to each of the semiconductor layers 458 to 460 functioning as one electrode of the storage capacitor 505. The storage capacitor 505 includes electrodes (448 and 4) using the insulating film 451 as a dielectric.
32b) and semiconductor layers 458 to 460.

Further, according to the steps shown in this embodiment, the number of photomasks necessary for manufacturing the active matrix substrate can be five. As a result, the process can be shortened, and the manufacturing cost can be reduced and the yield can be improved.

As described above, the pixel portion 507 including the pixel TFT 504 and the storage capacitor 505 can be formed. Thus, the active matrix substrate is completed.

In this embodiment, in the photomask 123, the optical thin film formed in the second light transmitting portion 124 reduces the transmittance of light passing through the second light transmitting portion. As a result, the photosensitive resin film can be made unresolvable even if the width of the second light transmitting portion 124 is somewhat wider.

Also in this embodiment, as in the first embodiment, the contact hole penetrating the photosensitive resin film can be formed, and at the same time, irregularities can be formed on the surface of the photosensitive resin film.

Note that this embodiment can be freely combined with any one of Embodiments 1 to 5.

In this embodiment, another method for manufacturing a crystalline semiconductor layer for forming a semiconductor layer of a TFT of the active matrix substrate described in Embodiment 1 will be described. In this embodiment, a crystallization method using a catalytic element disclosed in Japanese Patent Application Laid-Open No. 7-130652 can also be applied. An example in that case will be described below.

In the same manner as in Example 1, a base film and an amorphous semiconductor layer are formed on a glass substrate with a thickness of 25 to 80 nm. For example, an amorphous silicon film is formed with a thickness of 55 nm. Then, an aqueous solution containing 10 ppm of the catalyst element in terms of weight is applied by a spin coating method to form a layer containing the catalyst element. Catalyst elements include nickel (Ni), germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), platinum (Pt), copper (Cu
), Gold (Au), and the like. For the layer 170 containing the catalyst element, the layer of the catalyst element may be formed to a thickness of 1 to 5 nm by a sputtering method or a vacuum deposition method in addition to the spin coating method.

In the crystallization step, first, heat treatment is performed at 400 to 500 ° C. for about 1 hour, so that the hydrogen content of the amorphous silicon film is 5 atom% or less. Then, using a furnace annealing furnace, thermal annealing is performed at 550 to 600 ° C. for 1 to 8 hours in a nitrogen atmosphere. Through the above steps, a crystalline semiconductor layer made of a crystalline silicon film can be obtained.

If an island-like semiconductor layer is produced from the crystalline semiconductor layer produced in this manner, Example 1 is obtained.
The active matrix substrate can be completed in the same manner as described above. However, when a catalyst element that promotes crystallization of silicon is used in the crystallization process, a small amount (about 1 × 10 ¹⁷ to 1 × 10 ¹⁹ atoms / cm ³ ) of the catalyst element remains in the island-like semiconductor layer. To do. Of course, it is possible to complete the TFT even in such a state, but it is more preferable to remove at least the remaining catalyst element from the channel formation region. One means for removing this catalytic element is a means that utilizes the gettering action of phosphorus (P).

The gettering process using phosphorus (P) for this purpose can be performed simultaneously in the activation step described with reference to FIG. The concentration of phosphorus (P) necessary for gettering may be approximately the same as the impurity concentration in the high-concentration n-type impurity region, and the n-channel T
Phosphorus (P) at the concentration of the catalyst element from the channel formation region of FT and p-channel TFT
It is possible to segregate into an impurity region that contains. As a result, the impurity region is 1 × 10
A catalytic element of about ¹⁷ to 1 × 10 ¹⁹ atoms / cm ³ was segregated. A TFT manufactured in this manner has a low off-current value and good crystallinity, so that high field-effect mobility can be obtained and good characteristics can be achieved.

This embodiment can be freely combined with any one of Embodiments 1 to 4.

The pixel portion formed by implementing the present invention can be used in various electro-optical devices (active matrix liquid crystal display, active matrix EL display, active matrix EC display). That is, the present invention can be implemented in all electronic devices in which these electro-optical devices are incorporated in the display unit.

Such electronic devices include video cameras, digital cameras, projectors (rear type or front type), head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones) Or an electronic book). Examples of them are shown in FIGS.
3 shows.

FIG. 12A illustrates a personal computer, which includes a main body 2001, an image input unit 2002,
A display portion 2003, a keyboard 2004, and the like are included. The present invention can be applied to the display portion 2003.

FIG. 12B shows a video camera, which includes a main body 2101, a display portion 2102, and an audio input portion 21.
03, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like. The present invention can be applied to the display portion 2102.

FIG. 12C illustrates a mobile computer (mobile computer).
, A camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like. The present invention can be applied to the display portion 2205.

FIG. 12D shows a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like. The present invention can be applied to the display portion 2302.

FIG. 12E illustrates a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded. The main body 2401, the display portion 2402, the speaker portion 2403, and the recording medium 2404 are illustrated.
Operation switch 2405 and the like. This player uses a DVD (Di as a recording medium).
gial Versatile Disc), CD, etc. can be used for music appreciation, movie appreciation, games, and the Internet.
The present invention can be applied to the display portion 2402.

FIG. 12F illustrates a digital camera, which includes a main body 2501, a display portion 2502, and an eyepiece portion 250.
3, an operation switch 2504, an image receiving unit (not shown), and the like. Display unit 2502 of the present invention
Can be applied to.

FIG. 13A illustrates a mobile phone, which includes a main body 2901, an audio output unit 2902, and an audio input unit 29.
03, a display portion 2904, an operation switch 2905, an antenna 2906, and the like. The present invention can be applied to the display portion 2904.

FIG. 13B illustrates a portable book (electronic book), which includes a main body 3001 and display portions 3002 and 300.
3, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like. The present invention can be applied to the display portion 3002.

FIG. 13C illustrates a display, which includes a main body 3101, a support base 3102, and a display portion 3103.
Etc. The present invention can be applied to the display portion 3103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Moreover, the electronic apparatus of a present Example is realizable even if it uses the structure which consists of what combination of Examples 1-5.

Claims (4)

A transistor and a first conductive layer ;
A resin layer on the transistor and on the first conductive layer ;
A pixel electrode, a second conductive layer, and a third conductive layer are provided on the resin layer,
The resin layer includes a first opening that penetrates, a second opening that penetrates, a third opening that penetrates, a fourth opening that penetrates, and a first region having irregularities, A flat second region, and
The second region is provided around the first opening, around the second opening, around the third opening, and around the fourth opening,
The pixel electrode has irregularities corresponding to the irregularities, and is electrically connected to one of a source or a drain of the transistor in the first opening,
The second conductive layer is electrically connected to the other of the source and the drain of the transistor in the second opening, and is electrically connected to the first conductive layer in the third opening. And
The electro-optical device, wherein the third conductive layer is electrically connected to the gate of the transistor in the fourth opening. In claim 1 ,
The electro-optical device, wherein the second conductive layer is provided on the second region except for a region overlapping with the second opening and the third opening. In claim 1 or claim 2 ,
It said third conductive layer, the fourth is other than the region overlapping with the opening, on the second region, the electro-optical device according to claim Tei Rukoto provided extending in a first direction. In claim 3 ,
Wherein the first conductive layer, an electro-optical device according to claim Tei Rukoto provided extending in a second direction crossing the first direction.

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