JP5352647B2 - substrate - Google Patents

Description

  The present invention relates to an electronic device, that is, an electric product to which an electronic technology is applied. The electronic device according to the present invention is not only a general electronic device in which electronic components are arranged on a substrate, but also an electronic device such as a solar cell, a solar power generation device, a light emitting device using a light emitting diode, a lighting device, a signal lamp, etc. Equipment etc. are also included.

  As is well known, an electronic device forms a wiring pattern having a predetermined pattern on one surface of a substrate, and solders an electronic component such as an active component or a passive component on the wiring pattern. The wiring pattern is obtained by applying an etching resist to a Cu foil formed in advance on a substrate and then patterning the Cu foil by a photolithography process. Solder made of thermosetting epoxy resin on the substrate so that the copper foil is exposed only in the part of the wiring pattern that is necessary for soldering the electronic components and the solder is not attached to the part that is not necessary for soldering. -Form a resist film. Then, the electronic component is soldered to the exposed Cu foil.

  As described above, the conventional electronic device has to be manufactured through a number of processes including the preparation of the copper-clad substrate, the etching / resist coating process, the photolithography process, the solder / resist coating process, and the component mounting process. For this reason, there was a limit to cost reduction and mass productivity improvement.

  Unlike the above-described method, a method may be used in which a conductive paste is directly screen-printed on a substrate. The conductive paste used at this time is obtained by dispersing metal powder or alloy powder as a conductive component in an organic vehicle. The organic vehicle includes an insulating resin such as a thermosetting insulating resin or a thermoplastic insulating resin, and a solvent. In some cases, a third component may be added to improve the dispersibility of the metal powder or to ensure flame retardancy.

  The wiring pattern thus obtained has a configuration in which metal powder is dispersed in an insulating resin. For this reason, compared with the case by a metal conductor itself, electroconductivity worsens.

  Therefore, in order to improve conductivity, it is conceivable to increase the filling rate by using a metal powder having a small particle size. However, the smaller the particle size, the easier the metal powder to agglomerate, so it is difficult to uniformly disperse in the conductive paste, and the contact portion between adjacent metal particles increases, increasing the connection resistance, The effect of improving conductivity commensurate with the increase in filling rate cannot be obtained.

  Further, it is known that when silver powder or Cu powder is used as the metal powder, a wiring having good conductivity can be obtained.

  However, when an electric field is applied in a hot and humid atmosphere, the conductive paste containing silver powder causes silver electrodeposition called migration in an electric circuit or electrode, and between electrodes or wirings formed by a wiring pattern. The short circuit phenomenon occurs. As countermeasures for preventing this migration, for example, techniques such as applying a moisture-proof paint to the surface of silver powder and adding a corrosion inhibitor such as a nitrogen compound to the conductive paste are well known. The effect was not obtained (see Patent Document 1). Moreover, in order to obtain a highly conductive conductor, the blending amount of silver powder must be increased. Since silver powder is expensive, there is a disadvantage that electronic equipment is expensive.

  In addition, since the conductive paste containing Cu powder has high oxidizability of Cu after heat curing, oxygen contained in the air and binder reacts with Cu powder to form an oxide film on the surface, and conductive Remarkably decreases the performance. As a countermeasure, Patent Document 2 discloses a Cu paste in which various additives are added to prevent oxidation of Cu powder and to stabilize conductivity. However, its conductivity is not as good as that of silver paste, and there are also drawbacks in storage and stability.

  In order to improve migration and obtain an inexpensive conductive paste, a conductive paste using silver-plated Cu powder has been proposed (see Patent Document 3 and Patent Document 4). However, when silver is uniformly and thickly coated, the migration improvement effect may not be sufficiently obtained. On the contrary, if the coating is thin, it is necessary to increase the filling amount of the conductive powder in order to ensure good conductivity, and as a result, the adhesive force (adhesive strength) is reduced due to the decrease in the relative binder component. A problem sometimes occurred.

  Further, electronic devices used outdoors, such as solar cells, are required to have durability that can withstand severe environmental fluctuations over a long period of time. In particular, when the solar cell is installed in a desert or the like where the sunshine time is long, the temperature fluctuation range of the installation location may exceed 100 ° C. However, the conventional solar cell in which the electrode is formed by the above-described technique has a problem that when it is placed in such a harsh natural environment, the electrode deteriorates in about several years, causing peeling and the like.

JP 2001-189107 A JP-A-5-212579 JP-A-7-138549 JP-A-10-134636

  The object of the present invention is high quality and high reliability with excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. It is to provide an electronic device having a metallized wiring.

  In order to solve the above-described problems, an electronic device according to the present invention includes a substrate and an electronic component. The substrate has metallized wiring, and the electronic component is electrically connected to the metallized wiring on the substrate.

  The metallized wiring includes a metallized layer and an insulating layer. The metallized layer includes a high melting point metal component, a low melting point metal component, and a carbon nanotube, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other. The insulating layer is formed simultaneously with the metallized layer and constitutes a protective film that covers the outer surface of the metallized layer.

  As described above, in the present invention, the metallized layer contains a high melting point metal component and a low melting point metal component, so that the low melting point metal component has a low melting point and the high melting point metal component and the low melting point metal component. Diffusion bonding can occur between them.

  As described above, since the high melting point metal component and the low melting point metal component are diffusion-bonded to each other, an electronic device having a metallized layer that has excellent electrochemical stability and oxidation resistance and is less likely to cause migration or an oxide film. Can be realized.

  In addition, the diffusion bonding of the high melting point metal component and the low melting point metal component results in a continuous metallized layer with almost no pores or disconnection, so that the filling degree and the denseness of the metallized layer are increased, and the electrical conductivity is high. An electronic device having a metallized layer with high physical strength can be obtained. In addition, since the high melting point metal component and the low melting point metal component are included, an electronic device having a highly conductive metallized layer can be obtained by selecting the material.

  Furthermore, the metallized layer contains carbon nanotubes together with a high melting point metal component and a low melting point metal component. Carbon nanotubes are characterized by high current density resistance that is more than 1,000 times that of copper, high thermal conductivity characteristics that are 10 times that of copper, high mechanical strength, and elongated shape. These features significantly improve the electrical properties, thermal properties, durability and mechanical strength of the metallized layer.

  Furthermore, since the insulating layer forms a protective film covering the outer surface of the metallized layer, external damage to the metallized layer can be avoided, and oxidation resistance, durability, and weather resistance are improved. In addition to the adhesion and adhesion of the metallized layer itself to the substrate, the adhesion and adhesion of the insulating layer are also generated, so that the overall adhesion and adhesion of the metallized wiring is improved.

  Further, since the insulating layer is formed at the same time as the metallized layer, the metallized layer does not come into contact with air unlike the case where the metallized layer and the insulating layer are formed at different times. Therefore, an electronic device having a high-quality metallized layer that is not oxidized can be obtained.

  As a total of the above-mentioned effects, it has excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. An electronic device having reliable metallized wiring is obtained.

  The metallized wiring may be formed on a metal or alloy film such as a Cu film (Cu foil). If a metallized wiring composed of a high melting point metal component and a low melting point metal component is formed on a Cu film, the cross-sectional area of the entire metallized wiring is increased and the electrical resistance is reduced without changing the thickness of the Cu foil. be able to. Further, the cross-sectional area of the entire metallized wiring can be increased and the electrical resistance can be reduced while the Cu foil is kept thin.

  In the present invention, the electronic device can include all electric products to which electronic technology is applied. In the present invention, among them, a computer, a mobile phone, a laminated electronic device, an electronic device, an electronic component, a solar cell, a light emitting diode, a light emitting device, a lighting device, a signal lamp, and a liquid crystal display are disclosed. Although these are specified by specific names, they are included in the category of electronic equipment referred to in the present invention in that they are electric products to which electronic technology is applied.

  As described above, according to the present invention, the electrochemical stability, oxidation resistance, filling properties, denseness, electrical properties, electrical properties, thermal properties, durability, mechanical / physical strength and heat resistance are improved. It is possible to provide an electronic device having a metallized wiring that is excellent and has high quality and high reliability with high adhesion and adhesion to the substrate.

  Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings. The accompanying drawings are merely examples.

It is a figure which shows an example of the electronic device which concerns on this invention. It is sectional drawing which shows a part of metallization wiring used for the electronic device shown in FIG. FIG. 3 is a sectional view taken along line 3-3 in FIG. 2. It is sectional drawing in another position of the metallization wiring used for the electronic device shown in FIG. It is a figure which shows the electrically conductive paste for metallized wiring formation. It is a figure which shows the application | coating state of the electrically conductive paste shown in FIG. It is a figure which shows the other example of the electrically conductive paste for metallized wiring formation. It is sectional drawing which shows another example of the metallization wiring used for the electronic device which concerns on this invention. FIG. 9 is a sectional view taken along line 9-9 in FIG. 8. It is a cross-sectional photograph of the metallized wiring of the electronic device according to the present invention. It is a cross-sectional photograph of the metallized wiring of a comparative example. It is a figure which shows the structure of the computer which is an example of the electronic device which concerns on this invention. It is a figure which shows the structure of the mobile telephone which is another example of the electronic device which concerns on this invention. It is a figure which shows the laminated electronic apparatus which is an example of the electronic device which concerns on this invention. It is a figure which shows the manufacturing process of the laminated electronic apparatus shown in FIG. It is a top view of the solar cell which is the other example of the electronic device which concerns on this invention. FIG. 17 is a bottom view of the solar cell shown in FIG. 16 (on the side opposite to the light incident side). It is sectional drawing which shows another example of a solar cell. It is a block diagram of the solar power generation device shown in FIGS. It is sectional drawing of the light emitting diode which is another example of the electronic device which concerns on this invention. It is a figure which shows the light-emitting device, illuminating device, or signal lamp using the light emitting diode shown in FIG. It is a fragmentary sectional view of the liquid crystal display which used the light emitting diode shown in FIG. 20 as a backlight.

  Referring to FIG. 1, the electronic device according to the present invention includes a substrate 11 and electronic components 141 to 146. These are generally arranged inside the exterior body 2.

  The substrate 11 has metallized wiring 12 having a predetermined pattern. The substrate 11 may be an organic substrate or an inorganic substrate. Moreover, the board | substrate which can comprise a semiconductor circuit, for example, Si substrate, may be sufficient, and a mere insulating substrate may be sufficient.

  The electronic components 141 to 146 are electrically connected to the metallized wiring 12 on the substrate 11. In FIG. 1, reference numeral 14 for displaying the electronic components 141 to 146 as a group is attached. The electronic components 141 to 146 are active components, passive components, or composite components thereof, and the number, type, shape, and the like thereof change according to the function and design of the electronic device. The electronic components 141 to 146 affect the behavior of electrons in the electronic system and the force field related thereto in a predetermined manner so that the system performs the intended function. The electronic components 141 to 146 are connected to each other by the metallized wiring 12 and constitute an electronic circuit having a specific function. The electronic components 141 to 146 may be individually packaged or may be packaged in the form of an integrated circuit and modularized.

  Further, the electronic device of the present invention includes an electronic device that does not have a clear division between the substrate 11 and the electronic components 141 to 146, and the substrate 11 functions as the electronic components 141 to 146, for example, the sun There are batteries.

  As shown in FIGS. 2 and 3, the metallized wiring 12 includes a metallized layer 121 and an insulating layer 122. The metallized layer 121 includes a high melting point metal component, a low melting point metal component, and a carbon nanotube. The high melting point metal component and the low melting point metal component are diffusion bonded to each other to form a series of continuous metal layers having a high packing density. The refractory metal component may include at least one selected from the group of Ag, Cu, Au, Pt, Ti, Zn, Al, Fe, Si, or Ni, At least one selected from the group of Sn, In, Bi or Ga can be included.

  The insulating layer 122 is made of an insulating resin, and is formed at the same time as the metallized layer 121 and constitutes a protective film that covers the outer surface of the metallized layer 121. As shown in FIGS. 2 and 3, the insulating layer 122 continuously covers the surface of the metallized layer 121, both side surfaces in the line width direction, and end surfaces in the length direction with a predetermined thickness.

  Further, as shown in FIG. 4, the electronic components 141 to 146 are connected such that the terminal electrode 13 penetrates the insulating layer 122 and bites into the metallized layer 121 on the lower side. The periphery of the terminal electrode 13 is covered with an insulating layer 122.

  As described above, since the metallized layer 121 includes the high melting point metal component and the low melting point metal component, the low melting point of the low melting point metal component is used to provide a space between the high melting point metal component and the low melting point metal component. Can cause diffusion bonding. Thus, since the high melting point metal component and the low melting point metal component are diffusion bonded to each other, the following effects can be obtained.

  First, since the high melting point metal component and the low melting point metal component are diffusion-bonded to each other, an electronic apparatus having the metallized layer 121 excellent in electrochemical stability and oxidation resistance can be realized.

For example, when Ag is used as the melting point metal component, in the metallized layer 121, diffusion bonding occurs between Ag and the low melting point metal component, thereby increasing its electrochemical stability and reliably preventing Ag migration. Is done. Even when Cu is used as the high melting point metal component, diffusion bonding occurs between Cu and the low melting point metal component, preventing oxidation of Cu.

  Next, by diffusion bonding of the high melting point metal component and the low melting point metal component, it becomes a continuous metallized layer 121 without pores or disconnection, so that the filling degree and denseness of the metallized layer 121 are increased, and the conductivity is increased. Increases mechanical and physical strength. In addition, since the high melting point metal component and the low melting point metal component are included, an electronic device having the highly conductive metallized layer 121 can be obtained by selecting the material.

  Further, the metallized layer 121 includes carbon nanotubes together with a high melting point metal component and a low melting point metal component. Carbon nanotubes are characterized by high current density resistance that is more than 1,000 times that of copper, high thermal conductivity characteristics that are 10 times that of copper, high mechanical strength, and elongated shape. These features significantly improve the electrical properties, thermal properties, durability and mechanical strength of the metallized layer.

  Single-walled carbon nanotubes are mostly in a honeycomb-like six-membered ring, but there are five-membered and seven-membered rings, which can take a structure that is not just a cylinder. In addition to single-wall single-wall nanotubes (SWNT), multi-wall multi-wall nanotubes (MWNT) are also known, and any type of carbon nanotube can be used.

  Multi-walled carbon nanotubes are also known to have excellent conductivity, elasticity, and strength, Young's modulus of 0.9 Tpa, and specific strength of up to 150 GPa. On the other hand, single-walled carbon nanotubes have excellent thermal conductivity. The Young's modulus is 1 TPa or more, and the specific strength varies depending on the structure, but is in the range of 13 to 126 GPa.

  The carbon nanotube has a diameter of 0.4 to 50 nm, and basically has a structure in which uniform flat graphite (graphene sheet) is rolled into a cylindrical shape. These structural features work advantageously in combination with high melting point metal particles and low melting point metal particles. The length of the carbon nanotube is considerably larger than its diameter, and can be set, for example, in the range of 100 nm to several hundred nm.

  Next, since the insulating layer 122 constitutes a protective film that covers the outer surface of the metallized layer 121, external damage to the metallized layer 121 can be avoided, and oxidation resistance, durability, and weather resistance are improved. To do. In addition to the adhesion and adhesion of the metallized layer 121 itself, the adhesion and adhesion of the insulating layer 122 are also generated, so that the adhesion and adhesion of the metallized wiring 12 as a whole is improved.

  Furthermore, since the insulating layer 122 is formed at the same time as the metallized layer 121, the metallized layer 121 is not exposed to air, unlike the case where the metallized layer 121 and the insulating layer 122 are formed at different times. Therefore, an electronic device having a high-quality metallized layer 121 that is not oxidized can be obtained.

  As a total of the above-mentioned effects, it has excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. An electronic device having the highly reliable metallized layer 121 is obtained.

  The metallized layer 121 and the insulating layer 122 can be formed using a conductive paste containing an insulating resin, a metal component, and a solvent. The insulating resin constituting the insulating layer 122 can be composed of a thermosetting insulating resin or a thermoplastic insulating resin. When a thermosetting insulating resin is used, the curing point is preferably higher than the melting point of the low melting point metal component and lower than the melting point of the high melting point metal component.

  Preferably, the insulating resin includes at least one selected from an epoxy insulating resin, an acrylate insulating resin, or a phenol insulating resin. As a solvent for pasting, a known organic solvent such as butyl carbitol, butyl carbitol acetate, butyl cellosolve, methyl isobutyl ketone, toluene, or xylene can be used.

  As shown in FIG. 5, the metallized layer 121 and the insulating layer 122 include a metal component composed of a high melting point metal component 124 that is a metal particle and a low melting point metal component 123 that is a metal particle, a carbon nanotube, and an insulating resin 122. The conductive paste is obtained by applying a heat treatment to the substrate 11 using a screen printing technique so as to form a predetermined pattern as shown in FIG. Accordingly, the preparation of the copper-clad substrate, the etching / resist coating process, and the photolithography process, which have been essential in the past, are no longer necessary, and the effects of significant cost reduction and mass productivity improvement can be obtained.

  In the heat treatment, it is desirable to heat at a temperature higher than the melting point of the low melting point metal component 123 and lower than the melting point of the high melting point metal component 124, for example, 100 to 300 ° C. By this heat treatment, the low melting point metal component 123 is dissolved, the high melting point metal component 124 and the low melting point metal component 123 are aggregated, and the high melting point metal component 124 is filled with the melted low melting point metal component 123. In addition, diffusion bonding (intermetallic bond) occurs between the low melting point metal component 123 and the high melting point metal component 124. By this diffusion bonding, the metallized layer 121 containing no insulating resin is formed. The metallized layer 121 settles below the insulating resin layer 122 due to the specific gravity difference. As a result, the metallized wiring 12 having a two-layer structure in which the outer surface (surface and side surfaces) of the metallized layer 121 attached to the substrate 11 is covered with the protective layer 122 made of an insulating resin is formed. Since the insulating layer 122 forms a protective film 122 that covers the outer surface (surface, side surface) of the metallized layer 121, a separate process for applying the protective film 122 is not necessary.

  In addition, even when Ag is used as the high melting point metal component, diffusion bonding occurs between Ag and the low melting point metal component in the metallized layer 121. Further, in the entire conductive composition, the metallized layer 121 is formed as an insulating layer. 122 covers. With this configuration, Ag migration can be reliably prevented. Similarly, when Cu is used as the high melting point metal component, diffusion bonding occurs between Cu and the low melting point metal component, and the metallized layer 121 is further covered with the insulating layer 122. Is prevented.

  As another example of the conductive paste, as shown in FIG. 7, the surface of the high melting point metal particle 124 may be a metal particle covered with a low melting point metal film 123, or this may be used. On the other hand, a metal particle in which the surface of the low melting point metal particle is covered with a high melting point metal film may be used.

  The metallized wiring 12 made of a high melting point metal component and a low melting point metal component may be formed on a metal film 125 such as a Cu film, as illustrated in FIGS. If the metallized layer 121 made of the high melting point metal component and the low melting point metal component is formed on the Cu film 125 (Cu foil), the cross-sectional area of the entire metallized wiring 12 can be increased without changing the thickness of the Cu film 125. The electrical resistance can be reduced by increasing the electrical resistance. Alternatively, the cross-sectional area of the metallized wiring 12 as a whole can be increased by forming the metallized layer 121 made of a high melting point metal component and a low melting point metal component attached on the Cu film 125 while reducing the thickness of the Cu film 125. The electrical resistance can be reduced by increasing the electrical resistance.

  FIG. 10 is a cross-sectional photograph of the metallized wiring 12 according to the present invention. The metallized wiring 12 is a system containing Sn, Bi, and Ag, and is divided into two layers of an insulating layer 122 and a metallized layer 121, and the surface of the metallized layer 121 is coated with the insulating layer 122. Referring to FIG. 10, it can be seen that there are no gaps or disconnections in the metallized layer 121.

  FIG. 11 is a cross-sectional photograph of a wiring in a comparative example obtained using a conductive paste made of silver particles and an epoxy insulating resin. From this cross-sectional photograph, it can be seen that silver particles exist individually without being coated on the surface. Moreover, a disconnection part is seen.

  Furthermore, in the metallized wiring 12 according to the present invention, as shown in FIG. 10, it is divided into an insulating resin layer and a metallized layer 121, and the surface of the insulating layer 122 is coated with the insulating resin layer. On the other hand, in the comparative example, as shown in the cross-sectional photograph of FIG. 11, it can be seen that silver particles exist individually without being coated on the surface, and silver migration occurred. A dark color portion appearing in the middle portion of FIG. 11 indicates a broken portion due to silver migration.

  Next, the PET film having the metallized wiring according to the present invention and the PET film having the silver wiring of the comparative example described above were subjected to a strength test to measure how many times the wire was bent when being bent. The experimental conditions such as applied load, applied thickness, and room temperature were the same.

  The PET film having the silver wiring of the comparative example was broken by the folding operation about 50 times, whereas the PET film having the metallized wiring according to the present invention was broken for the first time by bending exceeding 5000 times. occured.

  The electronic equipment in the present invention can include all electrical products to which electronic technology is applied. Representative examples include, for example, computers, mobile information devices, computer peripheral terminal devices, OA devices, communication devices, business information terminals / automatic recognition devices, car electronics devices, industrial machines, entertainment devices, audio devices, video devices. Or it is household electric appliances. Specific examples include, but are not limited to, liquid crystal displays, personal computers, car navigation systems, mobile phones, stacked electronic devices, solar cells, solar power generation devices, light emitting diodes, light emitting devices, lighting devices, signal lights, game machines, Examples include a digital camera, a television receiver, a DVD player, an electronic notebook, an electronic dictionary, a hard disk recorder, a personal digital assistant (PDA), a video camera, a printer, a plasma display, and a radio. Because of limited space, examples of the electronic devices described above include computers, mobile phones, stacked electronic devices, solar cells, solar power generation devices, light emitting diodes, light emitting devices, lighting devices, signal lights, and liquid crystal displays. I will explain to you.

<Personal computer>
In many personal computers, for example, as shown in FIG. 12, a central processing unit (CPU) 141 and a main memory 143 such as a DRAM are central, and a hard disk controller 146, a graphic controller 145, etc. It has a basic configuration with the added. Each component is connected by a CPU bus 12B1, a memory bus 12B2, an internal bus 12B3, 12B4, and the like as communication paths, and these buses 12B1 to 12B4 are connected by a chip set 144. In many cases, the CPU 141 includes a part (cache memory) 142 of a memory function, and the main memory 143 holds data and program information. Further, as peripheral devices 4, an input device 43 (keyboard, mouse, scanner, etc.), an output device 41 (liquid crystal display, speakers, etc.), a secondary storage device (hard disk drive, etc.) 42 and a communication device (modem, network Interface).

  The metallized wiring according to the present invention can be applied not only to the CPU bus 12B1, the memory bus 12B2, the internal buses 12B3 and 12B4, but also to the wiring 12A between the components 141 to 146 and 4 and the buses 12B1 to 12B4. That is, when the buses 12B1 to 12B4 and the wiring 12A between the components 141 to 146 and 4 and the buses 12B1 to 12B4 are formed on the board (substrate), these wirings are referred to as the metallized wiring according to the present invention. To do. The metallized wiring includes a metallized layer 121 and an insulating layer 122 as illustrated in FIGS. The metallized layer 121 includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other to form a continuous series of layers. The insulating layer 122 is formed at the same time as the metallized layer 121 and constitutes a protective film that covers the outer surface of the metallized layer 121. The same applies to the wiring 12A between each component and the buses 12B1 to 12B4.

  As a result, high-quality and high-reliability bus 12B1 with excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. A personal computer having -12B4 and wiring 12A is obtained.

<Mobile phone>
Next, for example, as illustrated in FIG. 13, the mobile phone includes an antenna 154, a front end module 141, a power amplifier circuit 142, a transceiver IC 140, a digital base band 147, and the like. The transceiver IC includes a transmission circuit 143, a reception circuit 148, an analog circuit 145 that performs baseband processing, an input / output interface I / O 146, and the like. The analog circuit 145 includes an A / D conversion circuit 151, a D / A conversion circuit 152, and the like.

  The metallized wiring according to the present invention can be applied to the wiring 12A between the antenna 154, the front end module 141, the power amplifier circuit 142, the transceiver IC 140, and the digital base band 147, and the inside of each component 141 to 154 It can also be applied to wiring.

  As a result, the high-quality and high-reliability wiring 12A is excellent in electrical conductivity, electrochemical stability, oxidation resistance, filling property, denseness, mechanical / physical strength, and high adhesion and adhesion to the substrate. And a mobile phone having internal wiring.

<Laminated electronic device>
Next, referring to FIG. 14, a multilayer electronic device in which a first chip component 14A, a second chip component 14B, and a third chip component 14C are stacked is illustrated. The first chip component 14A and the third chip component 14C are, for example, a chip of the main memory 143 and a logic IC chip connected to the chip in the computer shown in FIG. The second chip component 14B is, for example, an interposer, and is located between the first chip component 14A constituting the main memory chip and the third chip component 14C constituting the logic IC chip, and a predetermined value therebetween. This wiring is formed. Metallized wiring 12 having a predetermined pattern is formed between the second chip component 14B and the third chip component 14C, and between the second chip component 14B and the first chip component 14A. Yes.

  The metallized wiring 12 is according to the present invention and includes a metallized layer 121 and an insulating layer 122. The metallized layer 121 includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other to form a series of continuous metallized layers 121. The insulating layer 122 is made of an insulating resin, is formed at the same time as the metallized layer 121, and constitutes a protective film that covers the outer surface of the metallized layer 121.

  As a result, high-quality and high-reliability metallized wiring 12 having excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical / physical strength, and high adhesion between substrates. A laminated electronic device having

  To obtain the three-dimensional multilayer electronic device shown in FIG. 14, the conductive paste 12 according to the present invention is applied to one or both surfaces of the second chip component 14B, as shown in FIG. Apply. Since the conductive paste 12 includes a high melting point metal component and a low melting point metal component, the heat treatment is performed at a temperature higher than the melting point of the low melting point metal component and lower than the melting point of the high melting point metal component, for example, 100 to 300 ° C. To do. This heat treatment dissolves the low melting point metal component. As a result, the high melting point metal component and the low melting point metal component are aggregated to form a filling structure filled with the dissolved low melting point metal component between the high melting point metal component, and the low melting point metal component and the high melting point metal component. Diffusion bonding occurs between the two.

  The low melting point metal component and the high melting point metal component are the terminal electrode 13 of the first chip component 14A, the terminal electrode 125 of the second chip component 14B, and the terminal electrode 13 of the second chip component 14B and the third chip. Since it aggregates toward the terminal electrode 125 of the component 14C, the metallized layer 121 that connects the terminal electrode 13 of the first chip component 14A and the terminal electrode 1125 of the second chip component 14B, and the second chip component The metallized layer 121 that connects the terminal electrode 13 of 14B and the terminal electrode 125 of the third chip component 14C is formed. The outer surfaces (surface and side surfaces) of the metallized layer 121 are covered with a protective layer 122 made of an insulating resin.

  When the second chip component 14B is an interposer, it is desirable that a so-called TSV (Through Silicon Via) technique is applied and a through electrode is formed in the thickness direction. As a result, a three-dimensional circuit arrangement structure can be realized, which can contribute to an increase in capacity, an increase in transfer speed, an improvement in high-frequency characteristics, and the like by a method different from the line width reduction.

  In the realization of the TSV structure, the vertical conductor that plays a central role is preferably a molten solidified conductor formed by a molten metal filling method. In order to form a vertical conductor (penetrating electrode) made of a molten solidified body by a molten metal filling method, for example, the molten metal is previously filled in a fine hole opened in the substrate, and the filled molten metal is pressed into the pressing plate. While applying the press, injection injection pressure or rolling pressure using, cool and cure. According to this molten metal filling method, it is possible to form a high-quality vertical conductor (through electrode) having no voids in a very short time compared to plating or the like. Therefore, a high-quality electronic device having a three-dimensional structure that achieves an increase in capacity, an increase in transfer speed, an improvement in high-frequency characteristics, and the like can be realized by a method different from the reduction in line width.

  As another form, the three-dimensional structure may be realized by applying TSV technology to the electronic components 141 to 146 such as a memory and a logic IC. Also in the mobile phone shown in FIG. 13, the TSV technology can be applied to main components.

<Solar cell>
Referring to FIGS. 16 and 17, the back surface of the silicon substrate 11 is electrically connected to the p ⁺ semiconductor layer 14P and the n ⁺ semiconductor layer 14n on the back surface (opposite to the light incident surface) of the silicon substrate 11. The passivation film 126 formed on the p ⁺ semiconductor layer 14P is formed on the p ⁺ semiconductor layer 14P in accordance with the portion from which the passivation film 126 is removed, and the n ⁺ semiconductor layer 14n is formed. An n-electrode contact 15p is formed thereon. Further, the n metallized wiring 12n is formed on the passivation film 126 and the n electrode contact 15n, and the p metallized wiring 12p is formed on the passivation film 126 and the p electrode contact 15p. The p metallized wiring 12P and the n metallized wiring 12n are electrodes that mainly collect current generated in the solar battery cell, and these are formed as inter-digital electrodes. When a large number of solar cells are arranged on a single silicon substrate 11, a role as a bus electrode for connecting the solar cells to either the p metallized wiring 12p or the n metallized wiring 12n. Can be carried.

  Here, the p metallized wiring 12p includes a metallized layer 121p and an insulating layer 122p. The metallized layer 121p includes a high melting point metal component and a low melting point metal component. The high melting point metal component and the low melting point metal component are diffusion bonded to each other. The insulating layer 122p is formed simultaneously with the metallized layer 121p, and constitutes a protective film that covers the outer surface of the metallized layer 121p.

  The n metallized wiring 12n is the same, and includes a metallized layer 121n and an insulating layer 122n. The metallized layer 121n includes a high melting point metal component and a low melting point metal component. The high melting point metal component and the low melting point metal component are diffusion bonded to each other to form the metallized layer 121n. The insulating layer 122n is formed at the same time as the metallized layer 121n, and constitutes a protective film that covers the outer surface of the metallized layer 121n. The formation method is as described above.

Referring now to FIG. 18, on the passivation film 126 provided on one surface of the silicon substrate 11, n ⁺ semiconductor layer 14n electrically connected to the n electrode contacts 15n, and, p ⁺ semiconductor layer 14p and the electrical P electrode contact 15P to be connected is formed. An n metallized wiring 12n is formed on the n electrode contact 15n and the passivation film 126. Further, a p metallized wiring 12p is formed so as to cover the surface of the n metallized wiring 12n and expose the surface of the p electrode contact 15p. Is done.

  The metallized layer 121n of the n metallized wiring 12n includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other. The insulating layer 122n is formed simultaneously with the metallized layer 121n and covers the outer surface of the metallized layer 121n. The metallized layer 121n is connected to the n-electrode contact 15n.

  The metallized layer 121p of the P metallized wiring 12p includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other. The insulating layer 122p is formed at the same time as the metallized layer 121p, and constitutes a protective film that covers the outer surface of the metallized layer 121p. The metallized layer 121p is connected to the p electrode contact 15p. An antireflection film 129 is attached to the sunlight incident surface of the substrate 11.

  According to the above configuration, high quality and high reliability with excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. It is apparent from the above that a solar cell having the metallized layers 121p and 121n is obtained. The advantage of the present invention is that it can withstand large temperature fluctuations and operate stably over a long period of time even when the solar cell is installed in a harsh natural environment such as a desert. It is useful.

  The metallized wiring according to the present invention can be applied not only to the illustrated solar cell but also to other types of solar cells. For example, in a solar cell having a transparent electrode such as ITO on the sunlight incident side, a transparent electrode is formed, or in a dye-sensitized solar cell, an electrode is formed.

<Solar power generator>
Referring to FIG. 19, a solar power generation device 6 using a solar cell is illustrated. The illustrated solar power generation device converts the DC power output from the solar cell 61 into AC by the power conversion device 62 and supplies the converted AC power to the load 65 via the power distribution device 63. Surplus power is sold to the commercial AC system 7. The power conversion device 62 and the power distribution device 63 are controlled by the control device 64. The solar cell 61 is a collection of many solar cells shown in FIGS.

<Light emitting diode>
Referring now to FIG. 20, a light emitting diode according to the present invention is illustrated. The light emitting diode illustrated in FIG. 20 includes a light emitting element 14, an n metallized wiring (first metallized wiring) 12n, and a p metallized wiring (second metallized wiring) 12p. The light emitting element 14 is laminated on the transparent crystal substrate 161. The transparent crystal substrate 161 is made of sapphire or the like, the surface is a light emitting surface, and the light emitting element 14 is laminated on the other surface of the transparent crystal substrate 2 opposite to the light emitting surface.

  In the light emitting element 14, an n-type semiconductor layer 14n is formed on a buffer layer 162 stacked on a transparent crystal substrate 161, and a p-type semiconductor layer 14p is formed on the n-type semiconductor layer 14n via an active layer 14a. It has a laminated structure. The n-type semiconductor layer 14n located on the transparent crystal substrate 161 side has a portion 164 that does not overlap the P-type semiconductor layer 14P, and the step of this portion 164 is filled with the metal conductive layer 165.

  The n metallized wiring 12n is connected to the n-type semiconductor layer 14n, and the p metallized wiring 12p is connected to the p-type semiconductor layer 14p. The n metallized wiring 12n includes a metallized layer 121n and an insulating layer 122n, and the metallized layer 121n is bonded to the surface of the metal conductive layer 165. The metallized layer 121p of the p metallized wiring 12p is provided on the same side as the n metallized wiring 12n, and is connected to the p-type semiconductor layer 14p via the reflective film 163.

  The metallized layer 121n and the metallized layer 121p are connected to first and second through electrodes 17NT and 17PT that penetrate the support substrate 11 and the insulating layers 122n and 122p.

  The n metallized wiring 12n is formed at the same time using the same conductive paste containing an insulating resin and a metal component. The metal component includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion bonded to each other to form the metallized layer 121n. The insulating layer 122n is made of an insulating resin and covers the outer surface of the metallized layer 121n. The metallized layer 121n is connected to the n-electrode contact 15n.

  The P metallized wiring 12p is also formed at the same time using the same conductive paste containing an insulating resin and a metal component. The metal component includes a high melting point metal component and a low melting point metal component, and the high melting point metal component 124 and the low melting point metal component 123 are diffusion bonded to each other to form the metallized layer 121p. The insulating layer 122p is made of an insulating resin and constitutes a protective film that covers the outer surface of the metallized layer 121p.

  According to the above configuration, high quality and high reliability with excellent electrical conductivity, electrochemical stability, oxidation resistance, filling properties, denseness, mechanical and physical strength, and high adhesion and adhesion to the substrate. It is obvious that a light emitting diode having the metallized layers 121p and 121n can be obtained.

  The metallized wiring according to the present invention can be applied not only to the illustrated light emitting diode but also to other types of light emitting diodes. For example, a transparent electrode is formed in a light emitting diode pond having a transparent electrode such as ITO on the light emitting side.

<Light emitting device, lighting device or signal lamp>
Referring to FIG. 21, a light emitting device having m light emitting diodes LED1 to LEDm is illustrated. The light emitting diodes LED1 to LEDm are those shown in FIG. 20, and include a light emitting element 14, an n metallized wiring (first metallized wiring) 12n, and a p metallized wiring (second metallized wiring) 12p. The specific structure of the light emitting diodes LED1 to LEDm is as described in detail with reference to FIG. The light emitting diodes LED1 to LEDm may be arranged in a single row or in a plurality of rows. Further, the substrate may be common to the light emitting diodes LED1 to LEDm. Furthermore, it may be an array of R, G, B light emitting diodes, or an array of monochromatic light emitting diodes.

  The light-emitting device illustrated in FIG. 21 can be used as a lighting device or as a traffic light signal lamp. It is obvious from the above description that these light-emitting devices, lighting devices, or signal lamps have high quality and high reliability.

<LCD display>
FIG. 22 is a diagram showing a liquid crystal display, and has a structure in which a liquid crystal panel 8 and a backlight 9 are combined. The backlight 9 is obtained by arranging m light emitting diodes LED1 to LEDm shown in FIG. 20 in a matrix. It is clear from the above description that this liquid crystal display is of high quality and high reliability.

  Although the contents of the present invention have been specifically described above with reference to preferred samples, it is obvious that those skilled in the art can take various modifications based on the basic technical idea and teachings of the present invention. is there.

11 Substrate 12 Metallized wiring 121 Metallized layer 122 Insulating layer 14 Electronic component

Claims (1)

A substrate having metallized wiring,
The metallized wiring includes a metallized layer and an insulating resin layer,
The metallized layer includes a high melting point metal component, a low melting point metal component, and a carbon nanotube, and the high melting point metal component and the low melting point metal component are diffusion-bonded to each other and attached to one surface of the substrate. ,
The insulating resin layer is formed simultaneously with the metallized layer and covers the outer surface of the metallized layer.
substrate.