JP5335843B2 - Manufacturing method of substrates for electronic devices - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To find out that characteristics of an electronic device to be manufactured are adversely affected by an atmosphere of a heat treatment apparatus used for manufacture of the electronic device and to reduce adverse influence. <P>SOLUTION: An inner surface of the heat treatment apparatus is covered with an oxide passivation film, and has a center average roughness Ra of &le;1 &mu;m. Such a heat treatment apparatus can reduce deterioration of thermosetting resin due to dissolution, dissociation etc., of thermosetting resin during a treatment for curing the thermosetting resin. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

The present invention relates to a method for manufacturing a substrate for an electronic device .

  Conventionally, every electronic device includes a wiring layer formed on a substrate together with an insulating layer. As an example, a display device, particularly a flat panel display device, will be described. A liquid crystal display device and an organic EL display device have a wiring structure (active matrix structure) for TFTs arranged in a matrix. In the active matrix structure, a scanning line for transmitting a data signal writing timing, a signal line for supplying a data signal corresponding to a display image to the pixel, and a switching for supplying the data signal to the pixel in accordance with the timing signal generated on the scanning line. It is composed of a thin film transistor (hereinafter referred to as TFT) as an element. A substrate including scan lines, signal lines, and TFTs is also called an active matrix substrate, and is formed by forming several layers of circuit patterns on the surface of the substrate by a process such as film formation in a reduced-pressure atmosphere or photolithography. On the other hand, in order to improve the performance of the display device, studies are underway to increase the effective pixel area ratio of the display device called the aperture ratio. As a first method, an interlayer insulating film for covering a TFT having a normal step described in JP-A-09-080416 (Patent Document 1), JP-A-09-090404 (Patent Document 2) and the like, and further a transparent electrode thereon Has been devised to increase the aperture ratio by forming a signal line and a transparent electrode in a multilayer structure. Among these, the light transmittance of the interlayer insulating film is required to be 90% or more. As a second method, the present inventors previously described in Japanese Patent Application No. 2003-40030 (Patent Document 3) that the planarization layer is configured so as to surround the gate wiring in order to absorb the step generated by the gate wiring. is suggesting. Further, the signal line is made thicker and the wiring width is narrowed to increase the aperture ratio. In both the first and second methods, a transparent thermosetting resin is used for the interlayer insulating film and the planarizing layer.

  Environmental control is not performed regarding the heating atmosphere at the time of curing at present. In general, heating is often performed in the atmosphere or in an environment such as nitrogen containing impurities of a percentage order. Therefore, depending on the conditions, the thermosetting resin is decomposed and dissociated to lower the light transmittance, and as a result, the display performance is deteriorated such that the brightness of the display device becomes dark. The cause of light transmittance deterioration is that the heating conditions are due to the treatment at a temperature higher than the temperature at which the thermosetting resin is thermally decomposed, and the deterioration of the thermosetting resin is promoted by residual oxygen and residual moisture in the heat treatment atmosphere. What is done.

  On the other hand, when a planarization layer is formed so as to surround the gate wiring, as a structure of the active matrix substrate, it is necessary to form a semiconductor layer for TFT by a plasma processing apparatus directly on the planarization layer. Generally, the substrate surface temperature during plasma film formation reaches 300 to 350 ° C. In addition, it has been known for a long time that the mixing of moisture and carbon components from the process atmosphere greatly affects the semiconductor characteristics during the semiconductor layer formation process. Therefore, in order to suppress the amount of gas generated from the planarization layer, it is necessary to perform a heat treatment that is equal to or higher than the semiconductor layer deposition temperature, for example, 300 ° C. or higher. However, the current process of heating the thermosetting resin for flattening layer formation is not sufficiently controlled with respect to the amount of residual oxygen and moisture in the atmosphere, and the thermosetting resin deteriorates and the light transmittance is low. There was a problem of a drop.

  The problems as described above are not limited to active matrix substrates, but are also problems that occur with miniaturization in printed circuit boards and electronic devices in general.

JP 09-080416 A JP 09-090404 A Japanese Patent Application No. 2003-40030

  An object of the present invention is to provide an electronic device manufacturing apparatus and a manufacturing method that enable control of a heating atmosphere that is effective in improving the performance and reliability of the electronic device. It is another object of the present invention to provide an electronic device such as a high-performance and high-reliability display device manufactured by these methods.

  The inventors of the present invention have made extensive studies in order to achieve the above-described object. It has been found that controlling the residual oxygen amount, residual moisture amount and reducing gas amount in the heating atmosphere is effective in improving the transparency of the thermosetting resin, and has led to the completion of the present invention.

  Thus, according to the present invention, there is provided a manufacturing apparatus in which the surface roughness of the inner surface of the heat treatment apparatus for manufacturing an electronic device is 1 μm or less in terms of the center average roughness Ra.

  In addition, according to the present invention, there is provided an electronic device manufacturing apparatus characterized in that an inner surface of a heat treatment apparatus forms an oxide passive film by performing heat treatment in contact with an oxidizing gas. .

  In addition, it is preferable that the oxide passivation film of the manufacturing apparatus is at least one of chromium oxide, aluminum oxide, and titanium oxide.

  Further, according to the present invention, it is preferable to replace the heat treatment atmosphere with an inert gas and control the residual oxygen concentration in the atmosphere to 10 ppm or less. Furthermore, it is preferable to control residual moisture to 10 ppm or less. Moreover, it is preferable to add 0.1-100 volume% of reducing gas like hydrogen in an inert gas.

  The thermosetting resin is a resin selected from the group consisting of acrylic resins, silicone resins, fluorine resins, polyimide resins, polyolefin resins, alicyclic olefin resins, epoxy resins and silica resins. It is preferable that 1 type or multiple types are included.

  Furthermore, the present invention provides high-performance display devices such as flat panel display devices, electronic devices such as printed circuit boards, personal computers and mobile phone terminals, which are manufactured by the above manufacturing apparatus and manufacturing method.

  In the present invention, by controlling the surface roughness of the inner surface of the heat treatment apparatus used in the manufacture of electronic devices, adverse effects due to decomposition, dissociation, etc. of the thermosetting resin used in the heat treatment apparatus are reduced. Thus, a film having a high light transmittance can be formed. For this reason, the present invention can be applied to the manufacture of an electronic device such as an active matrix substrate that requires a film having a high light transmittance, and the effect can be improved.

It is a figure explaining the evaluation apparatus which evaluates piping which has an oxide passive state film concerning the present invention. It is a graph explaining the evaluation result by the evaluation apparatus shown by FIG. It is a figure explaining the electronic device manufacturing system using the baking apparatus which performed the process which concerns on this invention. It is a figure explaining the cross section of the active matrix substrate which concerns on this invention. (A)-(i) is a figure explaining the manufacturing process of the active matrix substrate shown by FIG. 4 in order of a process.

  In the embodiment of the present invention, stainless steel or aluminum alloy is used as the material of the inner surface of the heat treatment apparatus for manufacturing electronic devices such as display devices. In particular, as the stainless steel, austenitic, ferritic, austenitic / ferritic and martensitic stainless steels can be used. For example, austenitic SU304, SUS304L, SU316, SUS316L, SUS317, SUS317L and the like are preferably used. The As surface polishing of stainless steel, pickling, mechanical polishing, belt polishing, barrel polishing, buff polishing, fluidized abrasive polishing, lapping polishing, burnishing polishing, chemical polishing, electrolytic composite polishing or electrolytic polishing treatment are possible. These polishings may be mixed in one material. However, when the surface roughness of the inner surface of the heat treatment apparatus for manufacturing an electronic device such as a display device is represented by the center average roughness Ra, buff polishing of 1 μm or less, fluidized abrasive polishing, lapping polishing, burnishing polishing, chemical polishing, Electrolytic composite polishing and electrolytic polishing are effective. The surface roughness is preferably 1 μm or less, more preferably 0.5 μm or less, and most preferably 0.1 μm or less in terms of the center average roughness Ra. If the surface roughness is greater than 1 μm in terms of the center average roughness Ra, impurity gases such as oxygen and moisture adsorbed on the inner wall of the container may be mixed into the atmosphere inside the heating apparatus.

  On the other hand, the inner surface of the heat treatment apparatus for manufacturing an electronic device such as a display device according to the present invention is subjected to heat treatment in an oxidizing atmosphere gas described in JP-A-7-233476 and JP-A-11-302824, so that the oxide is in a passive state. It is desirable to form a film.

  As an example, the formation condition of aluminum oxide is characterized by forming an aluminum oxide passive film by contacting aluminum or stainless steel with an oxidizing gas containing oxygen or moisture, and the oxygen concentration is 500 ppb to 100 ppm, preferably 1 ppm to The water concentration is 50 ppb to 50 ppm, preferably 500 ppb to 10 ppm. Further, an oxidizing mixed gas containing hydrogen in the oxidizing gas may be used. The oxidation treatment temperature is 700 ° C to 1200 ° C, preferably 800 ° C to 1100 ° C. The oxidation treatment time is 30 minutes to 3 hours.

  By forming the oxide passivation film, it is possible to improve the corrosion resistance and reduce the amount of moisture adsorbed on the surface. Even in the case of stainless steel that has been subjected to a cleaning surface treatment such as electropolishing, the amount of water released from the inner surface of the pipe is insufficiently controlled. It is desirable to form a passive film on the portion in contact with the reducing gas. Examples of the oxide passive film include chromium oxide, aluminum oxide, titanium oxide, and the like, and aluminum oxide is particularly desirable in terms of the corrosion resistance of the material and the reduction of the amount of moisture adsorbed on the inner surface.

  In addition, the heating atmosphere of the thermosetting resin used in the electronic device such as the active matrix display device applied to the embodiment of the present invention controls the residual oxygen concentration when the inside of the heat treatment apparatus is replaced with an inert gas to 10 ppm or less. It is desirable to do. The type of the inert gas is not particularly limited, and examples thereof include rare gases such as helium, neon, argon, krypton, xenon, and radon, and nitrogen. In particular, argon or nitrogen is particularly desirable because it is easy to obtain a highly purified gas having impurities such as moisture of 1 ppb or less. The residual oxygen concentration in the atmosphere in the heat treatment apparatus is desirably 10 ppm or less, preferably 1 ppm or less, and more preferably 100 ppb or less. When the residual oxygen concentration in the atmosphere is 10 ppm or more, when the temperature in the heat treatment apparatus is 200 ° C. or more, the oxidative deterioration of the thermosetting resin starts and the transparency deteriorates.

  Addition of a reducing gas into the inert gas atmosphere in the heat treatment apparatus has an effect of suppressing a decrease in light transmittance due to deterioration of the thermosetting resin. The amount of reducing gas added is from 0.1 to 100% by volume, preferably from 1 to 50% by volume, particularly preferably from 10 to 30% by volume, based on the inert gas. If the amount of reducing gas added is 0.1% or less, the effect of suppressing thermosetting resin deterioration cannot be obtained.

  The kind of the reducing gas used in the present invention is not particularly limited as long as it has an effect of suppressing the oxidation reaction of the resin, but hydrogen is preferable from the viewpoint of the reducing effect and the availability of highly purified gas.

  The wiring structure of the electronic device applied to the present invention is not particularly limited, but a structure in which the wiring layer is provided on the insulating substrate together with the planarizing layer is preferable. For example, in an active matrix substrate, a gate electrode is connected to the scan line, a signal line, and an intersection of the scan line and the signal line, and a source or drain electrode is connected to the signal line. The thin film transistor has a flattening layer between the thin film transistor and the transparent electrode, and the flattening layer is a structure formed of a thermosetting resin, or the surface of the signal line, the source electrode, and the drain electrode surrounds them. It is desirable that the layer is substantially flush with the layer, and the planarization layer has a structure formed of a thermosetting resin. In particular, in the case of a structure in which the surface of the signal line, source electrode, and drain electrode forms substantially the same plane as the surrounding flattening layer, the light transmittance deteriorates due to the increase in the number of flattening layers compared to the general structure Is more preferable.

  The planarization layer used in the present invention is characterized by being formed of a resin, and is preferably formed of a photosensitive resin composition. The planarization layer may contain an inorganic material. The planarization layer is more preferably formed using a resin composition containing an alkali-soluble alicyclic olefin resin and a radiation-sensitive component, but the photosensitive resin composition is an acrylic resin, A resin selected from the group consisting of a silicone resin, a fluorine resin, a polyimide resin, a polyolefin resin, an alicyclic olefin resin, and an epoxy resin may be included.

[Example]
Examples of the present invention will be described below. Of course, the present invention is not limited to the following examples. The analytical values in the following examples and comparative examples are values obtained by rounding off.

  The analysis conditions in the following examples and comparative examples are as follows.

(Analysis condition 1) X-ray photoelectron spectroscopic analysis (hereinafter abbreviated as “XPS analysis”)
Equipment: ESCA-1000 manufactured by Shimadzu Corporation
(Analysis condition 2) Atmospheric pressure ionization mass spectrometry (hereinafter abbreviated as “API-MS analysis”)
Apparatus: FTS-50A manufactured by Bio-Rad
(Analysis condition 3) Total light transmittance (ultraviolet spectrophotometric analysis)
Apparatus: Shimadzu UV-2550
The total light transmittance was defined as the average value of the light transmittance at each wavelength between 400 nm and 800 nm.
(Analysis condition 4) Residual film rate (step difference measurement)
Apparatus: P-10 manufactured by KLA-Tencor
The remaining film rate was defined as a value derived from the following formula.
Residual film ratio = (film thickness after heat treatment / film thickness before heat treatment) × 100

[Example 1]
In this example, the inner surface of a ferritic stainless steel pipe having a Cr content of 29.1% by weight was electrolytically polished and used. The pipe outer diameter was 1/4 inch, the pipe length was 2 m, and the surface roughness was about 0.5 μm. After the electrolytic polishing treatment, the above stainless steel is charged into the furnace, and the temperature is raised from room temperature to 550 ° C. over 1 hour while flowing Ar gas having an impurity concentration of several ppb or less into the furnace. Baking was performed to remove adhering moisture from the surface. After the baking, the heat treatment was performed for 3 hours by switching to a treatment gas having a hydrogen concentration of 10% and a water concentration of 100 ppm. A part of the pipe was cut out, and it was confirmed by XPS analysis that 100% Cr 2 O 3 was formed on the inner surface of the pipe with a thickness of about 15 nm in the depth direction.

[Example 2]
In this example, the inner surface of an austenitic stainless steel pipe having an Al content of 4.0% by weight was electropolished and used. The same size pipe as in Example 1 was used. After the electropolishing treatment, the stainless steel was charged into the furnace, and the temperature was raised from room temperature to 400 ° C. over 1 hour while flowing Ar gas having an impurity concentration of several ppb or less into the furnace. Baking was performed at the same temperature for 1 hour to remove adhering moisture from the surface. After completion of the baking, the oxidizing atmosphere was switched to an oxidizing atmosphere with a moisture concentration of 5 ppm and hydrogen added to the moisture mixed gas at a treatment temperature of 900 ° C. and a treatment time of 1 hour. A part of the pipe was cut out, and it was confirmed by XPS analysis that 100% Al 2 O 3 was formed on the inner surface of the pipe with a thickness of about 200 nm in the depth direction.

[Evaluation of drainage characteristics of various surface-treated pipes]
Evaluation using the stainless steel pipe treated in Examples 1 and 2 and the SUS316-EP pipe obtained by electropolishing the inner surface of the same size and the annealed SUS316-BA pipe as shown in FIG. The device was evaluated. The piping was heated to 500 ° C. in an argon gas atmosphere with a moisture content of 0.1 ppb or less to completely remove the moisture adsorbed on the inner surface, and then exposed to clean room air at a temperature of 23 ° C. and a relative humidity of 45% for 24 hours.

  Thereafter, Ar gas of 1.2 L / min was allowed to flow for 10 hours at room temperature in a tube having a diameter of 1/4 inch and a length of 2 m subjected to various surface treatments, and the moisture content in Ar during that time was measured by API-MS. The result is shown in FIG. In addition, since the amount of water generation is enormous for the first 3 minutes, the data is obtained after 3 minutes from the start of flowing Ar gas. On the annealed SUS316-BA surface, a water content of 10 ppb or more was generated even after flowing 720 L of Ar gas for 10 hours, whereas the stainless steel pipe treated in Examples 1 and 2 and electrolytic polishing were performed. In the SUS316-EP tube, the pressure drops to 3 ppb or less. In particular, in the stainless steel pipes treated in Examples 1 and 2, when 280 L of Ar gas is allowed to flow for 4 hours, the amount of water generated is 1 ppb or less.

[Example 3]
[Spectrophotometric analysis of planarization layer]
After washing a 20 mm × 30 mm non-alkali glass substrate, dehydration heating was performed in high-purity nitrogen. Thereafter, an adhesion layer was formed by steam treatment of hexamethylene disilazane (HMDS). After forming the adhesion layer, a thermosetting resin photosensitive acrylic resin (positive type) manufactured by JSR Corporation was applied by a spin coating method to form a resin film having a thickness of about 1 μm. The alkali-free glass substrate on which the resin film was formed was exposed on the entire surface of the 500 mJ (g, h, i-line mixed) substrate with a mask aligner (PLA501 manufactured by CANON). After the exposure, the apparatus is heated at 300 ° C. for 60 minutes in an atmosphere in which the oxygen concentration in the apparatus is controlled to 10 ppm with high-purity nitrogen and oxygen using the baking apparatus shown in FIG. The resin film was cured. The light transmittance of the heat-treated glass substrate was measured with a spectrophotometer and the film thickness was measured with a stylus type film thickness meter. The results are shown in Table 1.

[Comparative Example 1]
It carried out similarly to Example 3 except having controlled the oxygen concentration in a baking apparatus to 100 ppm. The results are shown in Table 1.

[Comparative Example 2]
It carried out similarly to Example 3 except having controlled the oxygen concentration in a baking apparatus to 1000 ppm. The results are shown in Table 1.

[Example 4]
The same operation as in Example 3 was performed except that 2% of hydrogen was added instead of oxygen. The results are shown in Table 1.

[Examples 5 and 6 and Comparative Example 3]
It carried out similarly to Example 3, 4 and the comparative example 1 except having used the photosensitive alicyclic olefin resin (positive type) by Nippon Zeon Co., Ltd. as a thermosetting resin. The results are shown in Table 1.

[Example 7]
The same operation as in Example 6 was performed except that 20% of the hydrogen concentration was added. The results are shown in Table 1.

[Examples 8 and 9]
It carried out similarly to Example 5 and 6 except having used the photosensitive silicone resin (negative type) by JSR Corporation as a thermosetting resin. The results are shown in Table 1.

[Example 10]
The same operation as in Example 8 was performed except that oxygen concentration of 10 ppm in the baking apparatus and 2% of hydrogen were added. The results are shown in Table 1.

[Comparative Example 4]
The same operation as in Example 8 was performed except that the oxygen concentration in the baking apparatus was controlled to 1%. The results are shown in Table 1.

[Example 11]
An active matrix display device according to Example 11 of the present invention will be described with reference to FIG. FIG. 4 is a cross-sectional view showing the structure of the active matrix liquid crystal display according to the eleventh embodiment. The scanning lines formed on the glass substrate, the signal lines, and the intersections between the scanning lines and the signal lines A thin film transistor in which a gate electrode is connected to the scan line and a source or drain electrode is connected to the signal line, a planarization layer is formed so as to surround the signal line, the source electrode, and the drain electrode, and the signal line The source electrode, the drain electrode, and the planarization layer form substantially the same plane. A pixel electrode is disposed on this plane via an interlayer insulating film to constitute an active matrix substrate, and a liquid crystal is sandwiched between the opposite substrate. The scanning lines and gate electrode wirings of Example 11 were embedded wirings by the ink jet method. Here, a method for forming the gate wiring portion will be described. First, an alicyclic olefin resin-based transparent resin film (thermosetting resin) having a thickness of 1 μm is formed on the surface of a glass substrate by a technique such as spin coating. This photosensitive resin film has a function as a photoresist film. Next, the photosensitive transparent resin film is selectively exposed, developed, removed and heat-cured using actinic radiation to form grooves in the photosensitive transparent resin film as shown in FIG. In order to increase the light transmittance of the photosensitive transparent resin, the heating and curing conditions were performed by using a heating device in which the inner surface of the device was electrolytically polished with SUS316, further controlling the residual oxygen concentration to 10 ppm, and baking at 300 ° C. for 60 minutes. When the wiring width is fine, a treatment for imparting water repellency to the surface of the transparent resin layer may be performed in order to increase printing accuracy. Specifically, the surface is treated with fluorine using a plasma of fluorine gas such as NF3, or the resin precursor is impregnated with a fluorine silylating agent before heat curing of the resin. Next, a wiring precursor is filled in the groove by a printing method such as an ink jet printing method or a plating method. The wiring forming method is preferably an ink jet method from the viewpoint of efficient use of ink, but a screen printing method or the like may be used. In this example, wiring was formed using the same silver paste ink as that disclosed in JP-A-2002-324966 as a wiring precursor. After filling with the wiring precursor, baking was performed at a temperature of 250 ° C. for 30 minutes to form scanning lines and gate electrode wirings (FIG. 5B). Next, a silicon nitride film (SiNx film) was formed using SiH 4 gas, H 2 gas, N 2 gas, and Ar gas by plasma CVD using microwave excitation plasma. Although it is possible to form a SiNx film using normal high frequency excitation plasma, it is possible to form a SiNx film at a lower temperature by using microwave excitation plasma. The film forming temperature was 300 ° C., and the film thickness was 0.2 μm (FIG. 5B). Next, an amorphous silicon layer and an n + type amorphous silicon layer were formed by a plasma CVD method using microwave excitation plasma. The amorphous silicon layer was formed using SiH 4 gas, and the n + type amorphous silicon layer was formed using SiH 4 gas, PH 3 gas, and Ar gas at a temperature of 300 ° C. (FIG. 5C). Next, a photoresist was applied to the entire surface by spin coating, and dried on a hot plate at 100 ° C. for 1 minute to remove the solvent. Next, using a g-line stepper, exposure was performed with an energy dose of 36 mJ / cm 2. At the time of exposure, a mask was formed so as to leave the element region, and the exposure amount was adjusted by using a slit mask for a portion corresponding to the channel region inside the element region. As a result of performing paddle development for 70 seconds using a 2.38% TMAH solution, the photoresist shape shown in FIG. 5D was obtained. Next, the n + type amorphous silicon layer and the amorphous silicon layer were etched using a plasma etching apparatus. At this time, since the photoresist is also slightly etched and the film thickness is reduced, the resist in the channel region where the photoresist film thickness is thin is removed by etching, and the n + silicon layer is also etched. When the n + -type amorphous silicon layer and the amorphous silicon layer other than the element region are removed by etching and the n + -type amorphous silicon layer in the channel region is removed by etching, the shape shown in FIG. . The photoresist on the n + type amorphous silicon layer of the source electrode portion and the drain electrode portion remains. Next, in this state, a microwave-excited plasma treatment is performed using Ar gas, N2 gas, and H2 gas to form a nitride film directly on the amorphous silicon surface of the channel portion (FIG. 5F). Although a nitride film can be formed using general high-frequency plasma, plasma with a low electron temperature can be generated by using microwave-excited plasma, so the nitride film does not damage the channel due to the plasma. Is preferable. Although a nitride film can be formed by a CVD method, a nitride film is also formed in the source electrode and drain electrode regions, and a removal step is required later. Therefore, a direct nitride film is more preferable. Next, the photoresist film remaining on the source electrode and drain electrode regions is subjected to oxygen plasma ashing and then removed with a resist stripping solution or the like to obtain a shape as shown in FIG. Subsequently, an alicyclic olefin resin-based photosensitive transparent resin film precursor as a wiring formation auxiliary layer required when forming signal lines, source electrode wirings and drain electrode wirings by a printing method such as an ink jet printing method or a plating method. A transparent resin layer is formed by applying a body (thermosetting resin) and performing exposure, development, and heat curing using a photomask for signal lines, source electrode wirings, and drain electrode wirings, as shown in FIG. As described, trenches to be signal lines, source electrode wirings, and drain electrode wiring regions are obtained. In order to increase the light transmittance of the photosensitive transparent resin, the heating and curing conditions were performed by using a heating device in which the inner surface of the device was subjected to electrolytic polishing treatment of SUS316, further controlling the residual oxygen concentration to 10 ppm, and baking at 250 ° C. for 60 minutes. When the wiring width is fine, a treatment for imparting water repellency to the surface of the transparent resin layer may be performed in order to improve accuracy. Specifically, the surface is fluorinated using plasma using a fluorine-based gas such as NF3, or the resin precursor is impregnated with a fluorine-based silylating agent before the post-baking of the resin. . Next, a wiring precursor is filled in the groove by a printing method such as an ink jet printing method or a plating method. The wiring forming method is preferably an ink jet method from the viewpoint of efficient use of ink, but a screen printing method or the like may be used. In this example, wiring was formed using the same silver paste ink as that disclosed in JP-A-2002-324966 as a wiring precursor. After filling the wiring precursor, firing was performed at a temperature of 250 ° C. for 30 minutes to form a wiring (FIG. 5I). In this way, the formation of the TFT was completed. Next, an alicyclic olefin resin-based photosensitive transparent resin was formed as an interlayer insulating film, and exposure and development were performed to form a contact hole from the pixel electrode to the TFT electrode. In the same way as in the previous steps, the photosensitive transparent resin is cured using a heating device in which the inner surface of the device is electropolished with SUS316 in order to increase the light transmittance of the photosensitive transparent resin, and the residual oxygen concentration is further controlled to 10 ppm. And calcined at 250 ° C. for 60 minutes. Subsequently, ITO was sputtered on the entire surface of the substrate and patterned to form a pixel electrode. A transparent conductive film material such as SnO2 may be used instead of ITO. A polyimide film was formed on this surface as a liquid crystal alignment film, and an active matrix liquid crystal display device was obtained by sandwiching the liquid crystal with the opposing substrate.

  According to the active matrix liquid crystal display device of this example, since the flattening layer has high transparency, low power consumption, high luminance, and high quality display can be obtained.

  The present invention can be applied not only to manufacturing a display device such as an active matrix substrate but also to manufacturing various electronic devices including a printed wiring board.

Claims (3)

It has an internal structure in which an oxide passivation film containing at least one of chromium oxide, aluminum oxide, titanium oxide, yttrium oxide, and magnesium oxide is provided on the inner surface having a center average roughness of 1 μm or less. Preparing a treatment apparatus for performing heat treatment;
A step of forming an atmosphere having a residual oxygen concentration of 10 ppm or less and a residual water content of 10 ppm or less by introducing an inert gas into the processing apparatus and performing a baking process for a predetermined time;
Introducing an inert gas and a reducing gas at a ratio of 0.1 to 100% by volume with respect to the inert gas into the atmosphere to form a mixed gas atmosphere of the inert gas and the reducing gas;
A step of thermosetting the thermosetting resin of the substrate for an electronic device, which has a thermosetting resin layer provided at a predetermined position and arranged in the mixed gas atmosphere, to form a planarization layer;
A method for producing a substrate for an electronic device, comprising: It has an internal structure in which an oxide passivation film containing at least one of chromium oxide, aluminum oxide, titanium oxide, yttrium oxide, and magnesium oxide is provided on the inner surface having a center average roughness of 1 μm or less. Prepare a treatment device that performs heat treatment,
An inert gas and a reducing gas in a proportion of 0.1 to 100% by volume with respect to the inert gas are introduced into the processing apparatus, the residual oxygen concentration is 10 ppm or less , and the residual water content is 10 ppm. The following atmosphere is formed, and the planarizing layer is formed by thermosetting the thermosetting resin of the electronic device substrate having the thermosetting resin layer disposed in the atmosphere at a predetermined position. ,
The manufacturing method of the board | substrate for electronic devices characterized by the above-mentioned. The thermosetting resin is a resin selected from the group consisting of acrylic resins, silicone resins, fluorine resins, polyimide resins, polyolefin resins, alicyclic olefin resins, epoxy resins and silica resins. Or the method of manufacturing the board | substrate for electronic devices of Claim 1 or 2 characterized by the above-mentioned.

Images