JP5335248B2 - Method for adjusting chromaticity of light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for adjusting the chromaticity of a light emitting device capable of minutely adjusting the chromaticity even in an actual production process without changing the proportion of fluorescent particles to a light transmissive resin and without executing polishing. <P>SOLUTION: The method is for adjusting the chromaticity of an LED device 10 provided with a blue LED chip 11 mounted on a substrate 17 and a light transmissive resin 13 including fluorescent particles 12 formed and cured so as to cover the blue LED chip 11. The method includes a chromaticity adjusting step of removing a part of the light transmissive resin 13 including the fluorescent particles 12 so as to reduce the proportion of the fluorescent particles to an excited light in a fluorescent spectrum by dry etching, wet etching or mechanical cutting. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a method for adjusting chromaticity of a light emitting device. More specifically, the present invention relates to a method for adjusting chromaticity of a light emitting device including a light emitting element such as an LED (Light Emitting Diode) chip and a translucent resin including a phosphor covering the light emitting element.

  In recent years, blue light emitting diodes using nitride semiconductors have been developed. By combining light emitting diodes with phosphors that absorb part of the light output from the light emitting diodes and output light of different wavelengths, Development of a light-emitting device having an emission color of a color tone is in progress. Furthermore, the light emitting device has increased luminous efficiency.

  The light emitting device has been applied not only to general indicators and simple illumination light sources but also to backlights of liquid crystal TVs and full-scale lighting fixtures.

  However, the chromaticity variation of cold cathode tubes used in so-called existing LCD TV backlights and the chromaticity variation of lighting fixtures (light sources) such as fluorescent lamps and incandescent lamps are a combination of light emitting diodes and phosphors. Very small compared to the chromaticity variation of the device. Specifically, light emitting diodes have large wavelength variations, and phosphors tend to have different characteristics for each production lot. Furthermore, phosphors tend to vary slightly in the amount charged in the manufacturing process. The variation is large with respect to current lighting fixtures.

  For this reason, if a light-emitting device combining a light-emitting diode and a phosphor is to be used for such applications, the problem of chromaticity variation must be solved.

  Therefore, in the conventional light emitting device, for example, the variation (variation) in the color tone is suppressed by making the thickness of the wavelength conversion layer uniform, or by providing a light emitting element housing having a recess for housing the light emitting element ( For example, see Patent Document 2). However, the conventional chromaticity adjustment method of the light emitting device has a problem that it is difficult to finely adjust the chromaticity.

  In order to solve the above problems, for example, Patent Document 1 includes “a light emitting element and a translucent resin that includes phosphor particles and is formed and cured so as to cover the light emitting element. A method of adjusting chromaticity of a light emitting device, wherein after the light transmissive resin is cured, a ratio of the phosphor particles to the light transmissive resin is changed by changing an amount of the light transmissive resin. The method of adjusting the chromaticity of the light emitting device including the step of adjusting the chromaticity by the above-mentioned method is shown.

  Specifically, as shown in FIG. 26, the chromaticity adjustment method of the light emitting device 110 disclosed in Patent Document 1 is such that the phosphor particles for the translucent resin 113 are cured after the translucent resin 113 is cured. The chromaticity is adjusted by changing the ratio of 112 (which may be a volume ratio or a weight ratio). Accordingly, it is not essential that the non-wavelength conversion layer 113 b substantially not including the phosphor particles 112 is formed in the translucent resin 113, and the fluorescence is increased as the translucent resin layer 113 is separated from the light emitting element 111. The body particles 112 may be formed so as to decrease, and the surface thereof may be polished or the translucent resin 113 may be applied to the surface. Even in this case, the ratio of the phosphor particles 112 to the translucent resin 113 can be changed, and the chromaticity can be adjusted.

  FIG. 27 illustrates a chromaticity adjustment method of the light emitting device 120 disclosed in Patent Document 1. In FIG. 27, after the LED chip 121 is mounted on the LED package 124, a translucent resin 123 including phosphor particles 122 is placed and cured. At that time, a method is disclosed in which the phosphor particles 122 sink to the bottom and a non-wavelength conversion layer containing almost no phosphor particles 122 is formed on the top.

  Further, in Patent Document 1, in order to reliably form a two-layer structure in the LED package 124, the lower part is a wavelength conversion layer containing a phosphor, and the upper part is a non-wavelength conversion layer containing almost no phosphor. Thus, a method of forming a wavelength conversion layer and a non-wavelength conversion layer in an overlapping manner is also disclosed.

  In any of the above methods, the chromaticity of the light emitting device 120 can be adjusted by scraping the non-wavelength conversion layer with the polishing device 125.

  That is, Patent Document 1 states that “the chromaticity can be adjusted by polishing a non-wavelength conversion layer that does not substantially contain the phosphor particles 122”, “the ratio of the phosphor particles 122 to the translucent resin 123 is changed. It is based on the knowledge that the chromaticity can be adjusted.

Furthermore, Patent Document 1 also refers to equipment for polishing the light-transmitting resin 123 in the plurality of LED packages 124 at the time of mass production of the light emitting device 120.
JP 2004-186488 A (released July 2, 2004) JP 2007-188976 (published July 26, 2007)

  However, in the chromaticity adjustment method using polishing such as the chromaticity adjustment method of the light emitting device disclosed in Patent Document 1, it is necessary to align the polishing device with high accuracy, and a plurality of LED packages are simultaneously polished. More precision is required to perform, the chromaticity adjustment method is a production method in which the overall throughput is likely to be reduced, scraped translucent resin is generated and reattached to other parts In addition, there is a possibility that a cleaning process may be required to suppress this, and furthermore, although the silicone-based translucent resin used for the white phosphor is soft (not described in Patent Document 1), it is polished. However, there is a problem that the precision of the precise cutting operation of the resin layer is poor, and it is difficult to finely adjust the chromaticity of the light emitting device.

  Further, polishing is applied to a light emitting device 130 that includes an LED package 131 having no cup as shown in FIG. 28A and in which phosphor particles diffuse relatively uniformly in the translucent resin. When the conventional chromaticity adjustment method is applied, the light-emitting device 130 including the LED package 132 as shown in FIG. 28B is obtained by polishing the translucent resin. And the light A radiated | emitted upwards from the LED chip has a reduced chromaticity because phosphor particles, that is, phosphor light-emitting components are reduced. On the other hand, the light B radiated from the LED chip to the side surface of the LED package maintains the chromaticity because the phosphor particles, that is, the phosphor light-emitting components are not changed. That is, there arises a problem that a difference in chromaticity depending on the direction of light emitted from the LED chip becomes large.

  In the chromaticity adjustment method of a light emitting device disclosed in Patent Document 1, the above problem is attempted to be solved by forming a non-wavelength conversion layer, that is, a layer that hardly contains phosphor particles. However, the LED package in the actual production process may leave the phosphor particles in the translucent resin floating, and in that case, a non-wavelength conversion layer, that is, a layer containing almost no phosphor particles is formed. Therefore, there is a problem that the chromaticity adjustment method of the light emitting device disclosed in Patent Document 1 cannot be used.

  Furthermore, the chromaticity adjustment method of the light emitting device disclosed in Patent Document 1 has a problem that the chromaticity cannot be adjusted unless the ratio of the phosphor particles to the translucent resin is changed. .

  The present invention has been made in view of the above-described conventional problems, and its purpose is to change the ratio of the phosphor particles to the translucent resin and to perform an actual production process without performing polishing. However, it is an object of the present invention to provide a chromaticity adjustment method for a light-emitting device capable of easily performing fine adjustment of chromaticity.

Chromaticity adjustment method of the light emitting device of the present invention, in order to solve the above problems, translucent including a light emitting element mounted on the base plate, the phosphor particles formed and cured so as to cover the light emitting element A method for adjusting the chromaticity of a light-emitting device comprising a fluorescent resin, wherein the light-transmitting resin includes the phosphor particles so as to reduce a ratio of a phosphor-emitting component to excitation light of an emission spectrum by mechanical cutting And a chromaticity adjusting step for removing a part of the light-transmitting resin, wherein the translucent resin containing the phosphor particles is provided with a lump for removal by mechanical cutting.

  According to the above invention, the chromaticity adjustment step of removing a part of the translucent resin including the phosphor particles so as to reduce the ratio of the phosphor light-emitting component to the excitation light of the emission spectrum by mechanical cutting. Therefore, the amount of phosphor particles can be reduced. And the chromaticity of the light radiated | emitted from a light-emitting device can be easily adjusted by adjusting the reduction | decrease amount of fluorescent substance particle. As a result, since the chromaticity adjustment method of the light emitting device of the present invention performs chromaticity adjustment without changing the ratio of the phosphor particles to the translucent resin, the phosphor particles are diffused throughout the translucent resin. Even so, it is possible to easily adjust the chromaticity. Furthermore, since the chromaticity adjustment method of the light emitting device of the present invention performs chromaticity adjustment without polishing, there is no inconvenience such as generation of waste of the translucent resin and reattachment to other portions.

  In addition, the translucent resin including the phosphor particles can be easily removed, and the amount of the translucent resin removed by mechanical cutting can be further controlled. .

  In the chromaticity adjustment method for a light emitting device of the present invention, it is preferable that a part of the translucent resin including the phosphor particles is spatially separated by mechanical cutting. In the chromaticity adjustment method of the light emitting device of the present invention, it is preferable that the cut surfaces of the translucent resin including the phosphor particles spatially separated by mechanical cutting are not parallel to each other.

  Thereby, the chromaticity adjustment method of the light emitting device of the present invention can radiate a part of the light emitted from the light emitting device to the outside through the gap of the cut surface, and further finely adjust the chromaticity. Can do.

Further, in the chromaticity adjustment method of the light emitting device of the present invention, in the chromaticity adjustment step, after curing the translucent resin containing the phosphor particles, the chromaticity of light emitted from the light emitting device is adjusted. measured, so as to adjust the deviation of the chromaticity to the chromaticity and the target, the aircraft械的cutting, it is preferable to remove a portion of the transparent resin containing the phosphor particles.

  Thereby, the chromaticity adjustment method of the light emitting device of the present invention can further finely adjust the chromaticity.

Chromaticity adjustment method of the light emitting device of the present invention, as described above, and the transparent resin containing a light emitting element mounted on the base plate, the phosphor particles formed and cured so as to cover the light emitting element A method for adjusting the chromaticity of a light emitting device comprising: a part of the translucent resin containing the phosphor particles so as to reduce the ratio of the phosphor light emitting component to the excitation light of the emission spectrum by mechanical cutting And a chromaticity adjusting step for removing the particles, and the translucent resin containing the phosphor particles is provided with a lump for removal by mechanical cutting.

  Therefore, it is possible to easily adjust the chromaticity of the light-emitting device without changing the ratio of the phosphor particles to the translucent resin and without performing polishing, even in the actual production process. There is an effect of providing a method.

(I) Chromaticity adjustment method of light emitting device of the present invention The chromaticity adjustment method of the light emitting device of the present invention comprises a light emitting element mounted on a substrate and phosphor particles formed and cured so as to cover the light emitting element. A method for adjusting the chromaticity of a light-emitting device comprising a translucent resin containing, wherein the ratio of the phosphor light-emitting component to the excitation light of the emission spectrum is reduced by dry etching, wet etching or mechanical cutting, It is a method including a chromaticity adjustment step of removing a part of the translucent resin containing phosphor particles.

  The light emitting element of the present invention is described using a blue LED chip, but is not particularly limited.

  The phosphor particles of the present invention are based on a cerium-activated yttrium / aluminum oxide phosphor capable of emitting light by exciting light emitted from a semiconductor LED chip having a nitride semiconductor as a light emitting layer. Various fluorescent materials such as those, nitride-based phosphors, and Ca—Al—Si—O—N-based oxynitride glass phosphors can be used.

  The translucent resin of the present invention is not particularly limited as long as it is used as a sealing resin.

  The etching used in the present invention includes dry etching or wet etching. Examples of dry etching include isotropic etching and anisotropic etching. Isotropic etching refers to etching that proceeds at a uniform rate in all directions of an object. Also, anisotropic etching refers to etching that is fast in a specific direction of an object. That is, in anisotropic etching, etching proceeds preferentially only in a specific direction of the object.

  In addition, if the phosphor particles are evenly diffused in the translucent resin and the light emitted from the light emitting element is evenly emitted in all directions, the amount of the removed phosphor particles ( The volume) and the emission intensity of the phosphor particles that have not been removed are approximately proportional.

[ Reference form 1]
It will be described on the basis An reference embodiment in FIGS. 1 to 14 of the present invention is as follows.

In Reference Form 1, dry etching is used to remove phosphor particles and translucent resin. As dry etching, for example, isotropic etching or anisotropic reactive ion etching (Reactive Ion Etching / RIE) is used.

  When a plasma etching apparatus is used as the dry etching apparatus, since the anisotropy of plasma ions is weak, the plasma ions wrap around the side surface of the translucent resin and the plasma ions also etch the side surfaces of the translucent resin. Thereby, the whole fluorescent substance particle and translucent resin are removed. By removing the phosphor particles and the translucent resin using dry etching, variation in chromaticity due to the radiation angle can be reduced as compared with the case where the translucent resin is removed using polishing. Furthermore, dust is not generated by removing the phosphor particles and the translucent resin using dry etching, compared to the case where the translucent resin is removed using polishing.

  Below, it demonstrates concretely based on FIGS.

[ Reference Example 1]
FIG. 1 is a cross-sectional view showing the LED device 10. A blue LED chip 11 is mounted inside the LED package 14 and sealed with a translucent resin 13 including phosphor particles 12. Part of the blue light emitted from the blue LED chip 11 is emitted to the outside through the gap between the phosphor particles 12. The remainder of the blue light emitted from the blue LED chip 11 collides with the phosphor particles 12, most of which is once absorbed by the phosphor particles 12, and then, for example, phosphor particles 12 such as green, yellow, and red. It is converted into light according to the characteristics of and is emitted to the outside.

  As a result, from the outside of the LED package 14, the blue light and the light converted by the phosphor particles 12 are seen as one body and recognized as a specific color.

  In the manufacturing method of the LED device 10, first, the blue LED chip 11 is die-bonded to the LED package 14 with a low-melting eutectic metal such as resin, Ag paste, or AuZn. Thereafter, the electrode of the blue LED chip 11 and the wiring portion 16 on the substrate 17 of the LED package 14 are connected (wire bonded) using a wire 15 such as an Au wire or an Al wire.

  Thereafter, the phosphor particles 12 are mixed with the translucent resin 13, and the mixture is poured into the LED package 14. Thereafter, the translucent resin 13 is cured in a high temperature atmosphere.

  Then, the chromaticity is measured in the LED device 10, and a deviation from the target chromaticity is calculated. Then, the dry etching time is adjusted according to the amount of deviation.

  FIG. 2A is a cross-sectional view showing a dry etching apparatus when a plasma etching apparatus 20 is used as the dry etching apparatus.

As an etching gas, an argon (Ar) -based, fluorine (F) -based, chlorine (Cl) -based gas, or the like can be used. Specifically, a gas such as Ar, CF ₄ , CHF ₃ , SF ₆ , or Cl ₂ can be used. While flowing the etching gas, a high-frequency current is passed from the RF transmitter 22 to the opposing electrode 21 to turn the etching gas into plasma.

  Plasma ions generated by the plasma process are accelerated by the internal potential of the opposing electrode 21, react with the translucent resin 13 including the phosphor particles 12 in the LED package 14, and perform etching. The shaved phosphor particles 12 and the translucent resin 13 (the translucent resin 13 including the phosphor particles 12) become very fine particles, and many of them are exhausted, so that the dust on the LED package 14 is recycled. Adhesion does not occur.

  When a plasma etching apparatus is used, since the anisotropy of plasma ions is weak, isotropic etching can be performed and the side surface of the translucent resin 13 can be etched as will be described later.

FIG. 2B is a cross-sectional view showing another dry etching apparatus when the plasma etching apparatus 20 is used as the dry etching apparatus. In FIG. 2B, for example, anisotropy becomes strong, but anisotropic reactive ion etching (RIE) using CF ₄ , CHF ₃ , and Ar gas can also be used.

  FIG. 3 is a cross-sectional view showing the LED device 30 after completion of etching. Compared to the LED device 10 before etching shown in FIG. 1, the LED package 14 is an LED package 34.

  Since the plasma etching has weak anisotropy, the side surface of the translucent resin 13 including the phosphor particles 12 is also etched. As a result, the phosphor particles 12 contained in the translucent resin 13 are reduced, and the LED package 34 as a whole is shifted toward the higher color temperature.

  FIG. 4 is a graph showing the relationship between the etching time and the color temperature in the LED package 14. Of course, this relationship changes depending on parameters such as gas flow rate and gas pressure, but the color temperature can be changed according to the etching time.

Note that the chromaticity is a two-dimensional parameter, and it is difficult to express the correlation between the chromaticity and the chromaticity control parameter. The color temperature is a temperature locus of black body radiation and is shown as a one-dimensional characteristic curve on the chromaticity coordinates. However, including the present reference example, the present invention can not only change the chromaticity on the color temperature curve, but can also control to a chromaticity position outside the curve. Also in the following examples or reference examples , the correlation with chromaticity adjustment parameters and methods is shown using color temperature instead of chromaticity.

  Here, FIG. 25 is a graph showing the relationship between chromaticity and color temperature (overall view and enlarged view, overall view is defined in 1931 by the CIE 1931 chromaticity diagram, International Illumination Commission (CIE)). Color standard). Specifically, FIG. 25A shows an xy chromaticity diagram, and FIG. 25B shows a black body locus, a color matching temperature line, and an equal deviation line on the xy chromaticity diagram.

  5 (a), 5 (b), 6 (a), (b), 7 (a), (b) are replaced with the LED package 14 shown in FIG. , 47 is a cross-sectional view showing LED devices 40, 43, 46 including 47. The LED package 41 shown in FIG. 5A is before etching, and the LED package 42 shown in FIG. 5B is after etching. Further, the LED package 44 shown in FIG. 6A is the one before the etching, and the LED package 45 shown in FIG. 6B is the one after the etching. Further, the LED package 47 shown in FIG. 7A is the one before etching, and the LED package 48 shown in FIG. 7B is the one after etching.

  And LED device 40 containing LED package 41,44,47 shown by Fig.5 (a) * (b), FIG.6 (a) * (b), FIG.7 (a) * (b), Also in 43 and 46, the chromaticity can be adjusted by a method similar to the method shown in FIGS.

[ Reference Example 2]
FIG. 8 is a cross-sectional view showing a plasma etching apparatus 50 in which an excitation light source 51 and a photodetector 52 for confirming the progress of etching are added to the plasma etching apparatus 20 shown in FIG.

  Specifically, the LED package is irradiated with blue light or near-ultraviolet light that can excite phosphor particles from the excitation light source 51, and the light emitted from the phosphor particles is analyzed by the photodetector 52 and etched. Monitor the progress of. A method for monitoring the intensity of excitation light emitted from the phosphor particles is generally used.

  The other configuration of the plasma etching apparatus 50 shown in FIG. 8 is the same as that of the plasma etching apparatus 20 shown in FIG.

[ Reference Example 3]
In order to distribute a large amount in the production process, it is necessary to measure the chromaticity in the LED device, calculate the deviation from the target chromaticity, and adjust the dry etching time according to the deviation.

  However, such a method may increase the number of batches. Therefore, a metal mask is placed on the phosphor particles to be etched and the translucent resin, and the etching amount is controlled by the aperture ratio of the metal mask. Thereby, the time of dry etching can be adjusted.

  The opening ratio of the metal mask refers to the ratio of the opening area calculated assuming that the surface of the translucent resin used as the sealing resin is completely opened as 100%. The opening means regularly arranging a plurality of circles, squares, etc., as shown in FIGS. 9B and 10B.

  The higher the aperture ratio, the greater the chromaticity shift due to etching, and the lower the aperture ratio, the smaller the chromaticity shift due to etching. By preparing a plurality of metal masks having different aperture ratios, it is possible to adjust a plurality of chromaticities under one dry etching condition, which is effective in reducing the number of batches.

  FIG. 9A is a cross-sectional view showing a target LED package, FIG. 9B is a schematic view in which a metal mask is overlaid on the LED package, and FIG. FIG. 9D is a cross-sectional view showing a state (a state in which the plasma ions 56 are transmitted through the opening 57 and the plasma ions 56 are shielded by the mask 58), and FIG. 9D is a cross-sectional view showing a state in which the etching is finished. .

  Since the anisotropy of plasma ions is weak, irregularities are formed in the etched shape. When the LED package after etching is viewed in detail, a difference in chromaticity occurs at the uneven portion. However, in an actual use state, since these lights appear to be gathered, a difference in chromaticity is not recognized in the uneven portion. The width or size of the opening and the mask depends on the light emission luminance of the LED chip, the light distribution characteristic, the arrangement of each LED chip, the light emission characteristic and addition amount of the phosphor particles, the shape and thickness of the translucent resin, etc. Adjust appropriately according to the specifications.

  10A is a cross-sectional view showing a target LED package, FIG. 10B is a schematic view in which a metal mask is overlaid on the LED package, and FIG. FIG. 10D is a cross-sectional view showing a state (a state in which the plasma ions 56 are transmitted through the opening 57 and the plasma ions 56 are shielded by the mask 58), and FIG. 10D is a cross-sectional view showing a state in which etching is completed. . FIGS. 10A to 10D show a case where a metal mask having a larger aperture ratio than that of FIGS. 9A to 9D is used.

  FIG. 11 is a graph showing the relationship between the aperture ratio of the mask, the etching time, and the color temperature. Of course, this relationship changes depending on parameters such as gas flow rate and gas pressure, but the color temperature can be changed according to the etching time.

In this reference example, the side surface of the translucent resin is shown as an example in which the side surface of the translucent resin is not etched. However, in this example, the non-uniformity of the chromaticity in the side surface direction is not considered. This is suitable when the thickness of the conductive resin is very thin.

[ Reference Example 4]
In place of the metal mask used in Reference Example 3, a photoresist mask using a photo process is used.

  12A is a cross-sectional view showing a target LED package, and FIG. 12B is a cross-sectional view showing a state in which a resist is applied and patterned by a photo process, and FIG. ) Is a cross-sectional view showing a state in which etching is completed.

  FIG. 13A is a cross-sectional view showing a target LED package, and FIG. 13B is a cross-sectional view showing a state in which a resist is applied and patterned by a photo process. (C) is sectional drawing which shows the state which etching complete | finished. FIGS. 13A to 13C show a case where a photoresist mask is formed with a pattern having a larger aperture ratio than that of FIGS. 12A to 12C.

  FIG. 14 is a graph showing the relationship between the aperture ratio of the mask, the etching time, and the color temperature. Of course, this relationship changes depending on parameters such as gas flow rate and gas pressure, but the color temperature can be changed according to the etching time.

In this reference example, the side surface of the translucent resin is shown as an example in which the side surface of the translucent resin is not etched. However, in this example, the non-uniformity of the chromaticity in the side surface direction is not considered. This is suitable when the thickness of the conductive resin is very thin. Further, this is not a limitation unless a photoresist mask is provided on the side surface of the translucent resin.

[ Reference form 2]
If described with reference to FIGS. 15 through 19 for the other reference embodiment of the present invention is as follows. Note that configurations other than what is explained in the present reference is the same as Embodiment 1. of Reference. For ease of explanation, members having the same functions as the members shown in the reference embodiment 1 of the drawings, the same reference numerals, and description thereof is omitted.

In this reference embodiment 2, in place of the dry etching of the first of the reference, by wet etching.

[ Reference Example 5]
Wet etching is basically based on the same concept as dry etching and aims to reduce the amount of phosphor particles in the translucent resin by using an etchant to dissolve the translucent resin.

  FIG. 15A is a cross-sectional view showing a target LED package, and FIG. 15B shows a state during etching (a state in which the entire LED device 61 is immersed in an etching solution 63 in an etching bath 62). FIG. 15C is a cross-sectional view showing a state in which etching has been completed.

  Since the etching solution 63 contacts the entire LED package 61, the side surface of the LED package 61 is also etched. Thereby, the LED package 64 after etching is obtained. As a result, the phosphor particles contained in the translucent resin are reduced, and the LED device 60 as a whole shifts toward the higher color temperature.

  FIG. 16 is a graph showing the relationship between etching time and color temperature. Of course, this relationship changes depending on parameters such as the temperature of the etching solution and the concentration of the etching solution, but the color temperature can be changed according to the etching time.

  Note that the molten translucent resin diffuses into the etching solution. Further, the phosphor particles float or settle in the etching solution, but are washed away in the cleaning process after etching, and hardly remain on the surface of the LED package.

[ Reference Example 6]
In order to distribute a large amount in the production process, it is necessary to measure the chromaticity in the LED device, calculate the deviation from the target chromaticity, and adjust the wet etching time according to the deviation.

  However, such a method may increase the number of batches. Therefore, a photoresist mask using a photo process is placed on the transparent resin to be etched, and the etching amount is controlled by the aperture ratio of the photoresist mask. Thereby, the time of wet etching can be adjusted.

  The higher the aperture ratio, the greater the chromaticity shift due to etching, and the lower the aperture ratio, the smaller the chromaticity shift due to etching. By preparing a plurality of photoresist masks having different opening ratios, it is possible to adjust a plurality of chromaticities under one wet etching condition, which is effective in reducing the number of batches.

  17A is a cross-sectional view showing a target LED package, and FIG. 17B is a cross-sectional view showing a state in which a resist is applied and patterned by a photo process, and FIG. ) Is a cross-sectional view showing a state in which etching is completed.

  FIG. 18A is a cross-sectional view showing a target LED package, and FIG. 18B is a cross-sectional view showing a state in which a resist is applied and patterned by a photo process. (C) is sectional drawing which shows the state which etching complete | finished. FIGS. 18A to 18C show the case where the mask is formed with a pattern having a larger aperture ratio than that of FIGS. 17A to 17C.

  FIG. 19 is a graph showing the relationship between the aperture ratio of the mask, the etching time, and the color temperature. Of course, this relationship changes depending on parameters such as the temperature of the etching solution and the concentration of the etching solution, but the color temperature can be changed according to the etching time.

[Embodiment 3]
The following will describe another embodiment of the present invention with reference to FIGS. Note that the configuration other than those described in the present embodiment is the same as Embodiment 1. of Reference. For ease of explanation, members having the same functions as the members shown in the reference embodiment 1 of the drawings, the same reference numerals, and description thereof is omitted.

In the third embodiment, in place of the dry etching of the first of the reference, using a mechanical cutting.

[Reference Example 7]
FIG. 20A is a cross-sectional view showing a target LED package, and FIG. 20B shows a state in which the phosphor particles and the translucent resin are cut (the peripheral portion of the LED package 71 is cut with a cutting jig 72. FIG. 20C is a cross-sectional view showing a state in which the amount of the phosphor contained in the light-transmitting resin is directly reduced), and FIG. It is sectional drawing which shows a state (LED package 73). Various variations such as cutting only one of the LED packages 71 and cutting the entire LED package 71 are possible. FIG. 20D is a graph showing changes in color temperature with respect to the remaining area of the translucent resin.

  In this reference example, the side surface of the LED package 71 formed in a substantially rectangular parallelepiped shape is cut in parallel to the side surface, so that the volume of the cut translucent resin can be converted into the surface area, and the surface shape monitor Can be easily managed.

  In addition, a remaining area shows the surface area in translucent resin after a cutting | disconnection. Moreover, an area ratio shows the surface area in the translucent resin after a cutting | disconnection with respect to the area of the surface in the translucent resin before a cutting | disconnection. Of course, this relationship varies depending on parameters such as the concentration of phosphor particles in the translucent resin, the number of LED chips in the translucent resin, and the total area of the translucent resin, but depending on the translucent resin area. The color temperature can be changed.

[Reference Example 8]
Since the specific gravity of the phosphor particles is large, as described in Patent Document 1, the phosphor particles sink in the translucent resin. Therefore, the concentration of the phosphor particles in the upper layer portion of the translucent resin is less than that of the phosphor particle in the lower layer portion of the translucent resin (although not as high as the non-wavelength conversion layer described in Patent Document 1). Is also low. Therefore, when performing mechanical cutting of the translucent resin, if only the vicinity of the upper layer part is cut, the number of phosphor particles contained in the upper layer part is small, so that the chromaticity can be finely adjusted.

  FIG. 21A is a cross-sectional view showing a target LED package, and FIG. 21B shows a state in which the phosphor particles and the translucent resin are cut (the vicinity of the upper layer portion of the peripheral portion of the LED package 71). FIG. 21C is a cross-sectional view showing a state in which the cutting tool 72 is used for cutting, thereby directly reducing the amount of phosphor contained in the translucent resin. FIG. It is sectional drawing which shows the state (LED package 74) which carried out. The same effect can be obtained by scraping not only the end portion of the LED package 71 but also the vicinity of the central portion.

Example 9
As shown in FIGS. 22A to 22C, land portions for cutting are prepared in advance in the phosphor particles and the translucent resin. How much chromaticity shift occurs when one land portion is cut can be adjusted by the ratio of the phosphor, the area of the land portion, and the like. Thereby, the chromaticity can be quickly adjusted with respect to the chromaticity shift amount obtained by the measurement after the translucent resin is cured.

  FIG. 22A is a top view of the LED package 81 provided with a land portion 82 to be cut in the LED device 80 (a land portion that can be cut into four places is configured), and FIG. FIG. 22C is a top view of the LED package 81 with one land portion 82 removed, and FIG. 22C is a top view of the LED package 81 with one land portion 82 removed. FIG. 23 is a graph showing a change in color temperature with respect to the number of removed land portions. Of course, this relationship changes depending on parameters such as the concentration of the phosphor particles in the translucent resin in the land portion, the number of LED chips in the translucent resin, and the total area of the translucent resin, but the land portion removed It does not change that the color temperature can be changed according to the number of colors.

Example 10
As shown in FIGS. 24A to 24E, if cuts 94, 95, and 96 are made in advance in the land portion 92, this becomes an interface. However, if the opposing interfaces remain parallel, light re-enters the outer translucent resin among the opposing translucent resins, and the change in chromaticity is reduced or not changed. Therefore, when a cut is made in the translucent resin, one or both surfaces of the cut are not perpendicular to the bottom surface of the translucent resin (shown in FIG. 24D or FIG. 24E). State). By doing so, light is less incident on the outer translucent resin, and the entire LED package 91 is easily shifted to the blue side.

  FIG. 24A is a top view of the LED package 91 provided with a land portion 92 to be cut in the LED device 90 (a land portion that can be cut into four locations is configured). FIG. 24B is a cross-sectional view of the LED package 91 provided with a land portion 92 to be cut. FIG. 24C is a cross-sectional view showing a state in which a cut 94 is made in one land portion 92. In this state, since the newly formed facing interface is parallel, the light that has reached the outside interface reflects to the inside and returns to the outside translucent resin among the facing translucent resins. It is divided into re-incident components and components radiated to the outside through the gaps at the interface. However, since there are few components radiated | emitted to the external field, actually the change of chromaticity is slight. FIG. 24D is a cross-sectional view showing a state in which a cut 95 obtained by obliquely cutting one of the translucent resins among the opposed translucent resins is formed in one land portion. In this state, it corresponds to the case where the amount of the phosphor particles is reduced by reducing the amount of the component that re-enters the outer translucent resin among the translucent resins facing each other. FIG. 24E is a cross-sectional view showing a state in which a cut 96 is formed by obliquely cutting both light-transmitting resins among the light-transmitting resins facing each other in one land portion. In this state, the component reflected and returned inward is reduced, which corresponds to a case where the amount of phosphor particles is further reduced.

(II) Others As described above , the chromaticity adjustment method of the light emitting device described above includes a light emitting element mounted on a substrate and a translucent resin including phosphor particles formed and cured so as to cover the light emitting element. In the light emitting device including the above, a configuration may be included that includes a step of adjusting chromaticity by changing the volume of the translucent resin including the phosphor particles.

Further, in the chromaticity adjustment method of the light emitting device described above , after the step of adjusting the chromaticity cures the translucent resin including the phosphor particles, the volume of the translucent resin including the phosphor particles. The configuration may be a step of adjusting the chromaticity by reducing the chromaticity.

Further, in the chromaticity adjustment method of the light emitting device described above , the step of adjusting the chromaticity measures characteristics after curing the translucent resin containing the phosphor particles, and sets the target chromaticity. The shift is a process of adjusting the chromaticity by reducing the volume of the translucent resin containing the phosphor particles by dry-etching a part of the translucent resin containing the phosphor particles. Also good.

Thereby, the chromaticity adjustment method for the light emitting device can finely adjust the chromaticity.

Further, chromaticity adjustment method of the light emitting device, light emitting device including a light-transmitting resin containing a light emitting element mounted on the substrate, the phosphor particles formed and cured so as to cover the light emitting element A chromaticity adjustment method for removing a part of the translucent resin including the phosphor particles so as to lower a ratio of a phosphor emission component to excitation light of an emission spectrum by dry etching. And dry etching in the chromaticity adjustment step is performed using the mask selected according to a desired etching amount from a plurality of prepared masks having different aperture ratios.

According to the above method, the chromaticity adjustment step of removing a part of the translucent resin including the phosphor particles so as to reduce the ratio of the phosphor light-emitting component to the excitation light of the emission spectrum by dry etching. As a result, the amount of phosphor particles can be reduced. And the chromaticity of the light radiated | emitted from a light-emitting device can be easily adjusted by adjusting the reduction | decrease amount of fluorescent substance particle. As a result, the chromaticity adjustment method of the light emitting device performs chromaticity adjustment without changing the ratio of the phosphor particles to the translucent resin, so that the phosphor particles are diffused throughout the translucent resin. Even if it exists, it becomes possible to adjust chromaticity easily. Furthermore, since the chromaticity adjustment method of the light emitting device performs chromaticity adjustment without polishing, there is no inconvenience such as generation of waste of translucent resin and reattachment to other portions.

Furthermore, the amount of the translucent resin containing the phosphor particles removed by dry etching can be further controlled.

The configuration of the chromaticity adjusting method of the light emitting device, a gas for dry etching used in the step of adjusting the chromaticity, argon (Ar) type, fluorine (F) based, chlorine (Cl) system It may be.

Thereby, the chromaticity adjustment method of the light emitting device described above can make dry etching even more effective.

Further, in the chromaticity adjustment method of the light emitting device described above, the dry etching used in the step of adjusting the chromaticity reduces the volume by etching the surface other than the upper surface of the translucent resin including the phosphor particles. It may be.

Further, chromaticity adjustment method of the light emitting apparatus, when the dry etching used in the step of adjusting the chromaticity, in order to control the amount of reducing the volume of the light-transmitting resin containing the phosphor particles, the mask The structure of using may be used.

Further, chromaticity adjustment method of the light emitting device is that a mask used for dry etching used in the step of adjusting the chromaticity, in order to control the amount of reducing the volume of the light-transmitting resin containing the phosphor particles However, the structure may be a metal mask.

Further, chromaticity adjustment method of the light emitting device is that a mask used for dry etching used in the step of adjusting the chromaticity, in order to control the amount of reducing the volume of the light-transmitting resin containing the phosphor particles However, the configuration may be a resist.

Thereby, the chromaticity adjustment method of said light-emitting device can control further the quantity which removes the said translucent resin containing the said fluorescent substance particle by dry etching.

Further, the chromaticity adjustment method of the light emitting device described above is to use properly the mask used in the dry etching used in the step of adjusting the chromaticity, with the aperture ratio of the mask changed according to the chromaticity to be adjusted. It may be a configuration.

In the chromaticity adjustment method of the light emitting device, the dry etching in the chromaticity adjustment step is preferably isotropic etching.

  Thereby, the chromaticity adjustment method of the light-emitting device can dry-etch not only the surface of the translucent resin containing the phosphor particles but also the side surfaces. As a result, in the above chromaticity adjustment method of the light emitting device, “the light emitted in the vertical direction (surface direction) is emitted in the lateral direction, although the probability of collision with the phosphor particles decreases and shifts to the blue side. The probability that the light collides with the phosphor particles is not reduced, and the phosphor emission is mainly performed, and the problem that the light becomes yellow light compared to the vertical direction can be further solved.

Further, in the chromaticity adjustment method of the light emitting device described above , the step of adjusting the chromaticity measures characteristics after curing the translucent resin containing the phosphor particles, and sets the target chromaticity. The shift is a step of adjusting the chromaticity by reducing the volume of the translucent resin containing the phosphor particles by dissolving a part of the translucent resin containing the phosphor particles in a solution. May be.

Thereby, the chromaticity adjustment method for the light emitting device can finely adjust the chromaticity.

Further, the chromaticity adjustment method of the light emitting device includes a light emitting device mounted on a substrate and a light transmitting device including a phosphor particle formed and cured so as to cover the light emitting device. A chromaticity adjustment method for removing a part of the translucent resin including the phosphor particles so as to reduce a ratio of a phosphor emission component to excitation light of an emission spectrum by wet etching. And wet etching in the chromaticity adjustment step is performed using the mask selected according to a desired etching amount from a plurality of prepared masks having different aperture ratios.

  According to the above method, the chromaticity adjustment step of removing a part of the translucent resin including the phosphor particles so as to reduce the ratio of the phosphor light-emitting component to the excitation light of the emission spectrum by wet etching. As a result, the amount of phosphor particles can be reduced. And the chromaticity of the light radiated | emitted from a light-emitting device can be easily adjusted by adjusting the reduction | decrease amount of fluorescent substance particle. As a result, the chromaticity adjustment method of the light emitting device performs chromaticity adjustment without changing the ratio of the phosphor particles to the translucent resin, so that the phosphor particles are diffused throughout the translucent resin. Even if it exists, it becomes possible to adjust chromaticity easily. Furthermore, since the chromaticity adjustment method of the light emitting device performs chromaticity adjustment without polishing, there is no inconvenience such as generation of waste of translucent resin and reattachment to other portions.

  Furthermore, the amount of the translucent resin containing the phosphor particles removed by wet etching can be further controlled.

Further, chromaticity adjustment method of the light emitting device, a mask to be used in the wet etching used in the step of adjusting the chromaticity, in order to control the amount of reducing the volume of the light-transmitting resin containing the phosphor particles However, the configuration may be a resist.

Thereby, the chromaticity adjustment method of said light-emitting device can control further the quantity which removes the said translucent resin containing the said fluorescent substance particle by wet etching.

Further, the chromaticity adjustment method of the light emitting device described above is to properly use a mask used in wet etching used in the step of adjusting the chromaticity, in which the aperture ratio of the mask is changed according to the chromaticity to be adjusted. It may be a configuration.

Further, in the chromaticity adjustment method of the light emitting device described above , the step of adjusting the chromaticity measures characteristics after curing the translucent resin containing the phosphor particles, and sets the target chromaticity. The configuration may be a step of adjusting the chromaticity by removing a part of the translucent resin including the phosphor particles by a mechanical method.

Further, chromaticity adjustment method of the light emitting device, the step of adjusting the chromaticity of the chromaticity by removing a part of the translucent resin by a mechanical method, the chromaticity of the target deviation size The structure may be a step of adjusting whether the translucent resin containing the phosphor particles is removed up to the substrate, or removed while leaving a portion bonded to the substrate. .

Further, chromaticity adjustment method of the light emitting device, a method of adjusting the chromaticity of the chromaticity part of the translucent resin is removed by a mechanical method, in advance, so as to facilitate removal A configuration in which a lump of translucent resin containing phosphor particles is provided may be used.

Further, in the chromaticity adjustment method of the light emitting device described above , the step of adjusting the chromaticity measures characteristics after curing the translucent resin containing the phosphor particles, and sets the target chromaticity. The shift may be a step of adjusting the chromaticity by spatially separating a part of the translucent resin containing the phosphor particles by a mechanical method.

Further, chromaticity adjustment method of the light emitting device, the mechanical cutting in the chromaticity adjusting process, the transparent resin containing the phosphor particles are removed to the portion in contact with the substrate It is preferable. Further, chromaticity adjustment method of the light emitting device, the mechanical cutting in the chromaticity adjusting process, as the transparent resin containing the phosphor particles, leaving a portion in contact with the said substrate It may be removed.

Thereby, the chromaticity adjustment method of the light emitting device described above can adjust the position of mechanical cutting according to the amount of deviation between the chromaticity of light emitted from the light emitting device and the target chromaticity. it can.

Further, chromaticity adjustment method of the light emitting device, the step of adjusting the chromaticity spatially separated by mechanical methods a part of the chromaticity of the light-transmitting resin, for spatially separating surface The configuration may be such that the surface and the surface are not parallel.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. Embodiments are also included in the technical scope of the present invention.

  Since the chromaticity adjustment method of the light emitting device of the present invention can easily perform fine adjustment of chromaticity even in an actual production process, it is applied to a light emitting device that requires adjustment of luminance and chromaticity of emitted light. be able to. Specifically, the present invention is not limited to general indicators and simple light sources for illumination, but can be used in a wide range of electrical and electronic machinery industries such as backlights for liquid crystal TVs and full-scale lighting fixtures. In particular, a backlight for TV and an LED module for illumination are optimal for applying the present invention. Further, the present invention can also be applied to train interior lights, street lights, and the like.

It is sectional drawing which shows one Embodiment about the chromaticity adjustment method of the light-emitting device in this invention. (A) * (b) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. It is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. It is a graph which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A) * (b) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A) * (b) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A) * (b) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. It is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A) * (c) * (d) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention, (b) is chromaticity adjustment of the light-emitting device in this invention. It is a schematic diagram which shows one form of the reference about a method. (A) * (c) * (d) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention, (b) is chromaticity adjustment of the light-emitting device in this invention. It is a schematic diagram which shows one form of the reference about a method. It is a graph which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. It is a graph which shows one form of reference about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows the other reference form about the chromaticity adjustment method of the light-emitting device in this invention. It is a graph which shows the other reference form about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows the other reference form about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows the other reference form about the chromaticity adjustment method of the light-emitting device in this invention. It is a graph which shows the other reference form about the chromaticity adjustment method of the light-emitting device in this invention. (A)-(c) is sectional drawing which shows the reference example about the chromaticity adjustment method of a light-emitting device, (d) is a graph which shows the reference example about the chromaticity adjustment method of a light-emitting device. (A)-(c) is sectional drawing which shows the other reference example about the chromaticity adjustment method of the light-emitting device in this invention. (A) ~ (c) is a top view showing an example of a chromaticity adjustment method of a semiconductor device according to the present invention. It is a graph which shows other embodiment about the chromaticity adjustment method of the light-emitting device in this invention. (A) is a top view which shows other embodiment about the chromaticity adjustment method of the light-emitting device in this invention, (b)-(e) is about the chromaticity adjustment method of the light-emitting device in this invention. It is sectional drawing which shows other embodiment. (A) * (b) is the graph which showed the relationship between chromaticity and color temperature. It is sectional drawing which shows the chromaticity adjustment method of the conventional light-emitting device. (A) * (b) is sectional drawing which shows the chromaticity adjustment method of the conventional light-emitting device. (A) * (b) is sectional drawing which shows the chromaticity adjustment method of the conventional light-emitting device.

10 LED device (light emitting device)
11 Blue LED chip (light emitting device)
12 Phosphor Particles 13 Translucent Resin 14 LED Package 15 Wire 16 Wiring Portion 17 Substrate 20 Plasma Etching Device (Dry Etching Device)
21 Electrode 22 RF transmitter 30 LED device (light emitting device)
34 LED package 50 Plasma etching equipment (dry etching equipment)
51 Excitation Light Source 52 Photodetector 56 Plasma Ion 57 Aperture 58 Mask 60 LED Device (Light Emitting Device)
61 LED package 62 Etching tank (wet etching tank)
63 Etching solution (wet etching solution)
64 LED package 70 LED device (light emitting device)
71 LED package 72 Cutting jig 73 LED package 74 LED package 80 LED device (light emitting device)
81 LED package 82 Land (lumps)
90 LED device (light emitting device)
91 LED package 92 Land (lumps)
93 Substrate 94 Cut (cut surface)
95 Cut (cut surface)
96 Cut (cut surface)

Claims (4)

A method for adjusting chromaticity of a light emitting device comprising: a light emitting element mounted on a substrate; and a translucent resin containing phosphor particles formed and cured so as to cover the light emitting element,
Including a chromaticity adjustment step of removing a part of the translucent resin including the phosphor particles so as to reduce the ratio of the phosphor emission component to the excitation light of the emission spectrum by mechanical cutting,
A method for adjusting chromaticity of a light-emitting device, characterized in that a lump for removal by mechanical cutting is provided in the translucent resin containing the phosphor particles. 2. The method for adjusting chromaticity of a light emitting device according to claim 1 , wherein a part of the translucent resin containing the phosphor particles is spatially separated by mechanical cutting. The chromaticity adjustment method for a light-emitting device according to claim 2 , wherein cut surfaces of the translucent resin including the phosphor particles spatially separated by mechanical cutting are not parallel to each other. In the chromaticity adjustment step, after curing the translucent resin containing the phosphor particles, the chromaticity of light emitted from the light emitting device is measured, and the chromaticity and the target chromaticity are determined. so as to adjust the deviation by machine械的cutting emitting device according to claim 1, wherein removing a portion of the transparent resin containing the phosphor particles Chromaticity adjustment method.

Images