JP5321666B2 - エピタキシャルウエハ、エピタキシャルウエハを作製する方法 - Google Patents
エピタキシャルウエハ、エピタキシャルウエハを作製する方法 Download PDFInfo
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- JP5321666B2 JP5321666B2 JP2011222175A JP2011222175A JP5321666B2 JP 5321666 B2 JP5321666 B2 JP 5321666B2 JP 2011222175 A JP2011222175 A JP 2011222175A JP 2011222175 A JP2011222175 A JP 2011222175A JP 5321666 B2 JP5321666 B2 JP 5321666B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 193
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 235000012431 wafers Nutrition 0.000 claims description 245
- 229910002601 GaN Inorganic materials 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 67
- 239000000203 mixture Substances 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 11
- 238000000103 photoluminescence spectrum Methods 0.000 claims description 5
- 238000005336 cracking Methods 0.000 abstract description 19
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- 230000008569 process Effects 0.000 description 20
- 239000013078 crystal Substances 0.000 description 19
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- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000005424 photoluminescence Methods 0.000 description 14
- 238000007740 vapor deposition Methods 0.000 description 12
- 238000007689 inspection Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
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- 238000012545 processing Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000004809 Teflon Substances 0.000 description 8
- 229920006362 Teflon® Polymers 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011222175A JP5321666B2 (ja) | 2011-10-06 | 2011-10-06 | エピタキシャルウエハ、エピタキシャルウエハを作製する方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011222175A JP5321666B2 (ja) | 2011-10-06 | 2011-10-06 | エピタキシャルウエハ、エピタキシャルウエハを作製する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007312631A Division JP4840345B2 (ja) | 2007-12-03 | 2007-12-03 | エピタキシャルウエハ、エピタキシャルウエハを作製する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012023396A JP2012023396A (ja) | 2012-02-02 |
| JP2012023396A5 JP2012023396A5 (https=) | 2012-03-22 |
| JP5321666B2 true JP5321666B2 (ja) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011222175A Expired - Fee Related JP5321666B2 (ja) | 2011-10-06 | 2011-10-06 | エピタキシャルウエハ、エピタキシャルウエハを作製する方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5321666B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5743928B2 (ja) * | 2012-03-05 | 2015-07-01 | 日立金属株式会社 | 窒化ガリウム系半導体エピタキシャルウェハ及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009003A (ja) * | 2000-06-23 | 2002-01-11 | Ricoh Co Ltd | 半導体基板およびその作製方法および発光素子 |
| JP4703014B2 (ja) * | 2001-02-15 | 2011-06-15 | シャープ株式会社 | 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法 |
| JP2003092450A (ja) * | 2001-09-19 | 2003-03-28 | Sharp Corp | 半導体発光装置 |
| JP4110222B2 (ja) * | 2003-08-20 | 2008-07-02 | 住友電気工業株式会社 | 発光ダイオード |
| JP4337560B2 (ja) * | 2004-01-22 | 2009-09-30 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板を製造する方法、窒化ガリウム基板、および窒化物半導体エピタクシャル基板 |
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- 2011-10-06 JP JP2011222175A patent/JP5321666B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2012023396A (ja) | 2012-02-02 |
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