JP5321150B2 - 複合センサー - Google Patents
複合センサー Download PDFInfo
- Publication number
- JP5321150B2 JP5321150B2 JP2009051616A JP2009051616A JP5321150B2 JP 5321150 B2 JP5321150 B2 JP 5321150B2 JP 2009051616 A JP2009051616 A JP 2009051616A JP 2009051616 A JP2009051616 A JP 2009051616A JP 5321150 B2 JP5321150 B2 JP 5321150B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- electrode
- movable
- acceleration sensor
- fixed electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000000758 substrate Substances 0.000 claims description 58
- 239000002131 composite material Substances 0.000 claims description 42
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009051616A JP5321150B2 (ja) | 2009-03-05 | 2009-03-05 | 複合センサー |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009051616A JP5321150B2 (ja) | 2009-03-05 | 2009-03-05 | 複合センサー |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010203990A JP2010203990A (ja) | 2010-09-16 |
| JP2010203990A5 JP2010203990A5 (enExample) | 2012-03-22 |
| JP5321150B2 true JP5321150B2 (ja) | 2013-10-23 |
Family
ID=42965609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009051616A Expired - Fee Related JP5321150B2 (ja) | 2009-03-05 | 2009-03-05 | 複合センサー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5321150B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10393523B2 (en) | 2014-06-12 | 2019-08-27 | Denso Corporation | Physical quantity sensor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5772873B2 (ja) | 2012-06-13 | 2015-09-02 | 株式会社デンソー | 静電容量式物理量センサ |
| JP6149910B2 (ja) * | 2015-10-08 | 2017-06-21 | セイコーエプソン株式会社 | 物理量センサーおよび電子機器 |
| JP6693214B2 (ja) * | 2016-03-25 | 2020-05-13 | セイコーエプソン株式会社 | 物理量検出装置、電子機器及び移動体 |
| JP2023152416A (ja) | 2022-04-04 | 2023-10-17 | セイコーエプソン株式会社 | 慣性センサーおよび慣性計測モジュール |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163936A (ja) * | 1992-11-19 | 1994-06-10 | Hitachi Ltd | 半導体式力学量センサ |
| JPH10239064A (ja) * | 1997-02-27 | 1998-09-11 | Matsushita Electric Ind Co Ltd | 角速度と加速度の複合センサ |
| GB0000619D0 (en) * | 2000-01-13 | 2000-03-01 | British Aerospace | Accelerometer |
| JP3435665B2 (ja) * | 2000-06-23 | 2003-08-11 | 株式会社村田製作所 | 複合センサ素子およびその製造方法 |
| JP3346379B2 (ja) * | 2000-09-21 | 2002-11-18 | 三菱電機株式会社 | 角速度センサおよびその製造方法 |
| JP2003344445A (ja) * | 2002-05-24 | 2003-12-03 | Mitsubishi Electric Corp | 慣性力センサ |
| JP5319122B2 (ja) * | 2008-01-21 | 2013-10-16 | 日立オートモティブシステムズ株式会社 | 慣性センサ |
-
2009
- 2009-03-05 JP JP2009051616A patent/JP5321150B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10393523B2 (en) | 2014-06-12 | 2019-08-27 | Denso Corporation | Physical quantity sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010203990A (ja) | 2010-09-16 |
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