JP5311754B2 - 結晶性半導体膜、半導体装置及びそれらの作製方法 - Google Patents
結晶性半導体膜、半導体装置及びそれらの作製方法 Download PDFInfo
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| SG156537A1 (en) | 2008-04-09 | 2009-11-26 | Toshiba Matsushita Display Tec | Methods of laser annealing a semiconductor layer and semiconductor devices produced thereby |
| WO2013054505A1 (ja) * | 2011-10-12 | 2013-04-18 | パナソニック株式会社 | 薄膜トランジスタ装置 |
| WO2015083042A1 (ja) * | 2013-12-03 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
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| JPH0770479B2 (ja) * | 1985-02-14 | 1995-07-31 | 旭硝子株式会社 | 半導体装置の製造方法 |
| JPS63299322A (ja) * | 1987-05-29 | 1988-12-06 | Sony Corp | 単結晶シリコン膜の形成方法 |
| JP3377160B2 (ja) * | 1996-12-13 | 2003-02-17 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP4841740B2 (ja) * | 2000-04-26 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004087535A (ja) * | 2002-08-22 | 2004-03-18 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| JP4593212B2 (ja) * | 2003-09-19 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
| JP2005285827A (ja) * | 2004-03-26 | 2005-10-13 | Advanced Lcd Technologies Development Center Co Ltd | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
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