JP5304097B2 - Reflective photomask, gripping apparatus, and exposure apparatus - Google Patents

Reflective photomask, gripping apparatus, and exposure apparatus Download PDF

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JP5304097B2
JP5304097B2 JP2008210137A JP2008210137A JP5304097B2 JP 5304097 B2 JP5304097 B2 JP 5304097B2 JP 2008210137 A JP2008210137 A JP 2008210137A JP 2008210137 A JP2008210137 A JP 2008210137A JP 5304097 B2 JP5304097 B2 JP 5304097B2
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reflective photomask
film
reflective
photomask
thin film
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JP2010045317A (en
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陽 坂田
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Toppan Inc
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本発明は、反射型フォトマスク、把持装置、露光装置及び露光方法に関し、特に、半導体製造におけるフォトリソグラフィ工程で用いられる反射型フォトマスク、把持装置、露光装置及び露光方法に関するものである。   The present invention relates to a reflective photomask, a gripping apparatus, an exposure apparatus, and an exposure method, and more particularly to a reflective photomask, a gripping apparatus, an exposure apparatus, and an exposure method used in a photolithography process in semiconductor manufacturing.

近年の半導体集積回路の微細化、高集積化に伴い、その製造工程であるフォトリソグラフィ工程で用いられるフォトマスク（レチクル）のパターン寸法も同様に微細化が進められている。フォトマスクのパターン面に異物が付着すると、この異物が半導体基板表面に投影され、欠陥となる。このため、パターン面への異物付着を抑止すべく従来からペリクルと呼ばれる除塵保護膜が考案されている。   With the recent miniaturization and high integration of semiconductor integrated circuits, the pattern dimensions of photomasks (reticles) used in the photolithography process, which is the manufacturing process, are also being miniaturized. When foreign matter adheres to the pattern surface of the photomask, the foreign matter is projected onto the surface of the semiconductor substrate and becomes a defect. For this reason, a dust removal protective film called a pellicle has been conventionally devised to suppress adhesion of foreign matter to the pattern surface.

ペリクルには、フォトリソグラフィ工程で用いられる露光光源の波長に対して高い透過率を有する樹脂材料が用いられている。ペリクルは一般に薄膜状に加工されたものが金属製のフレームに貼り付けられた構造となっている。このフレームをペリクルとは反対の端面をフォトマスクに接着剤で貼り付けて用いられている。   A resin material having a high transmittance with respect to the wavelength of an exposure light source used in the photolithography process is used for the pellicle. The pellicle generally has a structure in which a thin film processed is attached to a metal frame. This frame is used by attaching an end surface opposite to the pellicle to the photomask with an adhesive.

現在の露光光源はＫｒＦレーザ（波長２４８ｎｍ）、ＡｒＦレーザ（波長１９３ｎｍ）が主流となっている。近年の半導体集積回路の微細化に伴って、露光波長のさらなる短波長化が要請され、極端紫外線リソグラフィ（以下、「ＥＵＶリソグラフィ」という。（ＥＵＶ:Ｅｘｔｒｅｍｅ Ｕｌｔｒａｖｉｏｌｅｔ Ｌｉｔｈｏｇｒａｐｈｙ）の開発が進められており、その露光光源の波長は略１３．５ｎｍである。波長１３．５ｎｍでは従来の樹脂を材料としたペリクルでは透過せず、使用が不可能となっている。また、露光工程ではその環境が真空であることから、アウトガスを発生する樹脂材料は真空度を低下させる理由で敬遠される傾向にある。   Current exposure light sources are mainly KrF laser (wavelength 248 nm) and ArF laser (wavelength 193 nm). With the recent miniaturization of semiconductor integrated circuits, there has been a demand for further shortening of the exposure wavelength, and development of extreme ultraviolet lithography (hereinafter referred to as “EUV lithography”) (EUV: Extreme Ultraviolet Lithography) The wavelength of the exposure light source is approximately 13.5 nm, and at a wavelength of 13.5 nm, a conventional pellicle made of a resin does not transmit and cannot be used. For this reason, resin materials that generate outgas tend to be avoided for reasons of lowering the degree of vacuum.

このため、特許文献１には、露光装置の内部のマスク近傍にて電界を発生して帯電した浮遊粒子を付着させる機構を備えた技術が開示されている（特許文献１参照）。また、特許文献２には、ＥＵＶマスクを収納する容器を二重化することでペリクル機能を代替させた容器などを用いた技術が開示されている（特許文献２参照）。
特開２００６−１２０７７６号公報 特開２００７−１４１９２５号公報 For this reason, Patent Document 1 discloses a technique including a mechanism for attaching charged floating particles by generating an electric field in the vicinity of a mask inside an exposure apparatus (see Patent Document 1). Further, Patent Document 2 discloses a technique using a container in which the pellicle function is replaced by duplicating a container for storing an EUV mask (see Patent Document 2).
JP 2006-12076 A JP 2007-141925 A

しかしながら、特許文献１において、電界を発生させる方法を用いると、非帯電物質には作用しなくなってしまう問題がある。また、特許文献２において、容器の二重化では露光機内部における露光中はマスクがその容器から取り出されてしまうため、除塵作用が露光工程中では働かなくなってしまう問題がある。   However, in Patent Document 1, when a method of generating an electric field is used, there is a problem that it does not act on an uncharged substance. Further, in Patent Document 2, when the container is duplicated, the mask is taken out from the container during the exposure inside the exposure apparatus, so that there is a problem that the dust removing function does not work during the exposure process.

そこで、本発明は、上述の問題を解決するためになされたものであり、非帯電物質である磁性物質の除塵機能を反射型フォトマスクに備え、露光工程中で除塵機能を有する反射型フォトマスク、把持装置、露光装置及び露光方法を提供することを目的とする。   Accordingly, the present invention has been made to solve the above-described problem, and a reflection type photomask having a dust removal function of a magnetic substance that is an uncharged substance and having a dust removal function in an exposure process is provided. An object of the present invention is to provide a gripping apparatus, an exposure apparatus, and an exposure method.

本発明の請求項１に係る発明は、表面にパターン形成領域を有する反射型フォトマスクにおいて、反射型フォトマスクの裏面に薄膜コイルが形成され、薄膜コイルに電流を流してパターン形成領域に塵埃が付着するのを防ぐよう構成され、前記表面の前記パターン形成領域の外周の全部又は一部に第１のヨークを配置したことを特徴とする反射型フォトマスクとしたものである。 According to the first aspect of the present invention, in a reflective photomask having a pattern formation region on the surface, a thin film coil is formed on the back surface of the reflective photomask, and a current is passed through the thin film coil so that dust is generated in the pattern formation region. The reflective photomask is configured to prevent adhesion, and the first yoke is disposed on the whole or a part of the outer periphery of the pattern forming region on the surface .

本発明の請求項２に係る発明は、請求項１に記載の反射型フォトマスクにおいて、反射型フォトマスクの側面の全部又は一部に第２のヨークを配置したことを特徴とする反射型フォトマスクとしたものである。 The invention according to claim 2 of the present invention, in the reflection type photomask according to claim 1, reflective photo characterized in that the second yoke is disposed on all or part of the side surface of the reflection type photomask It is a mask.

本発明の請求項３に係る発明は、反射型フォトマスクは、基板と、基板上に形成された多層反射膜と、多層反射膜上に形成された保護膜と、保護膜上にパターン形成された緩衝膜と、緩衝膜上にパターン形成された吸収膜と、吸収膜上にパターン形成された低反射膜を具備することを特徴とする請求項１又は２に記載の反射型フォトマスクとしたものである。 According to a third aspect of the present invention, a reflective photomask is formed by patterning a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film, and a protective film. and a buffer film, and an absorbent layer which is patterned on the buffer layer, the reflective photomask according to claim 1 or 2, characterized in that it comprises a low-reflection film which is patterned absorbing film Is.

本発明の請求項４に係る発明は、薄膜コイルは導電性の非磁性材料であることを特徴とする請求項３に記載の反射型フォトマスクとしたものである。 The invention according to claim 4 of the present invention is the reflective photomask according to claim 3 , wherein the thin film coil is made of a conductive nonmagnetic material.

本発明の請求項５に係る発明は、薄膜コイルを構成する裏面導電膜が、パターン形成領域より大きいことを特徴とする請求項１乃至請求項４のいずれか１項に記載の反射型フォトマスクとしたものである。 Invention, the back side conductive film constituting the thin film coil, a reflective photomask according to any one of claims 1 to 4, characterized in that larger than the pattern formation region according to claim 5 of the present invention It is what.

本発明の請求項６に係る発明は、請求項１乃至請求項５のいずれか１項に記載の反射型フォトマスクを把持する把持装置において、薄膜コイルに電流を流すための手段を備えることを特徴とする把持装置としたものである。 According to a sixth aspect of the present invention, in the gripping device for gripping the reflective photomask according to any one of the first to fifth aspects, a means for passing a current through the thin film coil is provided. This is a characteristic gripping device.

本発明の請求項７に係る発明は、請求項１乃至請求項５のいずれか１項に記載の反射型フォトマスクに露光光を用いて所望のパターンに転写する露光装置において、反射型フォトマスクを把持する静電チャックは、薄膜コイルに電流を流すための手段を備えることを特徴とする露光装置としたものである。 According to a seventh aspect of the present invention, there is provided an exposure apparatus for transferring a reflection type photomask according to any one of the first to fifth aspects to a desired pattern using exposure light. The electrostatic chuck for gripping is an exposure apparatus including means for passing a current through the thin film coil.

本発明によれば、非帯電物質である磁性物質の除塵機能を反射型フォトマスクに備え、露光工程中で除塵機能を有する反射型フォトマスクを提供することができる。   According to the present invention, it is possible to provide a reflective photomask having a dust removal function of a magnetic substance that is an uncharged substance and having a dust removal function in an exposure process.

以下、本発明を、図面を参照して説明する。本発明の実施の形態において、同一構成要件には同一符号を付し、実施の形態の間において重複する説明は省略する。   Hereinafter, the present invention will be described with reference to the drawings. In the embodiment of the present invention, the same constituent elements are denoted by the same reference numerals, and redundant description among the embodiments is omitted.

図１は本実施の形態に係る反射型フォトマスク１００の構造を示す概略断面図である。反射型フォトマスク１００は、従来の波長２４３ｎｍ（ＫｒＦレーザ）や波長１９３ｎｍ（ＡｒＦレーザ）を用いたマスクの構造と異なり、波長１３．５ｎｍの光を用いることから、反射型フォトマスク１００に用いられる石英材料が光を透過しないため反射型構造となる。なお、反射型フォトマスクの一般的な仕様は業界規格であるＳＥＭＩスタンダードＰ３７−１１０２，Ｐ３７−１１０３で標準化されている。   FIG. 1 is a schematic sectional view showing the structure of a reflective photomask 100 according to the present embodiment. Unlike the conventional mask structure using a wavelength of 243 nm (KrF laser) or a wavelength of 193 nm (ArF laser), the reflective photomask 100 is used for the reflective photomask 100 because it uses light having a wavelength of 13.5 nm. Since the quartz material does not transmit light, it has a reflective structure. Note that the general specifications of the reflective photomask are standardized by SEMI standards P37-1102 and P37-1103, which are industry standards.

図１に示すように、本実施の形態に係る反射型フォトマスク１００は、多層の積層膜で構成され、光の入射方向（図中、矢印方向）から低反射膜１０、吸収膜２０、緩衝膜３０、保護膜４０、多層反射膜５０、基板６０、裏面導電膜７０を備えている。   As shown in FIG. 1, the reflective photomask 100 according to the present embodiment is formed of a multilayer film, and the low reflection film 10, the absorption film 20, and the buffer from the light incident direction (the arrow direction in the figure). A film 30, a protective film 40, a multilayer reflective film 50, a substrate 60, and a back conductive film 70 are provided.

本実施の形態に係る低反射膜１０は、パターン形状の検査のために波長１３．５ｎｍ以外の光を用いる場合があり、多層反射膜５０と低反射膜１０とのコントラスト（（（Ｒｍ−Ｒａ）／（Ｒｍ＋Ｒａ））×１００（％））を向上させるために形成する。本実施の形態に係る吸収膜２０は、パターン形成された際に、照射されたＥＵＶ光（極端紫外光）を吸収するものであり、ＥＵＶ光に対する高吸収性を有する材料から選択される。低反射膜１０及び吸収膜２０には、タンタル（Ｔａ）を主成分とし、珪素（Ｓｉ）、酸素（Ｏ）、窒素（Ｎ）の少なくとも１つを含む材料を用いて形成することが好ましい。   The low reflection film 10 according to the present embodiment may use light having a wavelength other than 13.5 nm for pattern shape inspection, and the contrast between the multilayer reflection film 50 and the low reflection film 10 (((Rm-Ra ) / (Rm + Ra)) × 100 (%)). The absorption film 20 according to the present embodiment absorbs irradiated EUV light (extreme ultraviolet light) when a pattern is formed, and is selected from materials having high absorbability with respect to EUV light. The low reflection film 10 and the absorption film 20 are preferably formed using a material containing tantalum (Ta) as a main component and at least one of silicon (Si), oxygen (O), and nitrogen (N).

本実施の形態に係る緩衝膜３０は、物理的または化学的反応による反射型フォトマスク１００の修正時に多層反射膜５０（後述する）をダメージから守る犠牲膜である。緩衝膜３０には、クロム（Ｃｒ）やジルコニウム（Ｚｒ）を主成分とし、酸素（Ｏ）、窒素（Ｎ）、シリコン（Ｓｉ）の少なくとも１つを含む材料を用いて形成することが好ましい。   The buffer film 30 according to the present embodiment is a sacrificial film that protects the multilayer reflective film 50 (described later) from damage when the reflective photomask 100 is corrected by a physical or chemical reaction. The buffer film 30 is preferably formed using a material containing chromium (Cr) or zirconium (Zr) as a main component and at least one of oxygen (O), nitrogen (N), and silicon (Si).

保護膜４０は多層反射膜５０の表面酸化などによる変質を保護するためのものであり、緩衝膜３０をエッチングして除去する際に、多層反射膜５０へのダメージを防ぐエッチングストッパーとして機能するものである。保護膜４０には、珪素（シリコン）及びＲｕ（ルテニウム）等の材料を用いて形成することが好ましい。   The protective film 40 is used to protect the multilayer reflective film 50 from deterioration due to surface oxidation or the like, and functions as an etching stopper that prevents damage to the multilayer reflective film 50 when the buffer film 30 is removed by etching. It is. The protective film 40 is preferably formed using a material such as silicon (silicon) and Ru (ruthenium).

多層反射膜５０は、露光光であるＥＵＶ光を反射するもので、ＥＵＶ光に対する屈折率の大きく異なる材料の組み合わせによる多層膜から構成されている。多層反射膜５０の材料には、例えば、モリブデン（Ｍｏ）とシリコン（Ｓｉ）、またはモリブデン（Ｍｏ）とベリリウム（Ｂｅ）といった組み合わせの層を４０周期程度繰り返し積層することにより形成することができる。多層反射膜５０の１層ずつの膜厚は、例えばＭｏ膜が２．８ｎｍ、Ｓｉ膜が４．２ｎｍである。ここで、パターンとなる光学的コントラスト（明暗）を形成する部分は多層反射膜５０及び吸収膜２０である。   The multilayer reflective film 50 reflects EUV light that is exposure light, and is composed of a multilayer film made of a combination of materials having significantly different refractive indexes with respect to EUV light. The material of the multilayer reflective film 50 can be formed, for example, by repeatedly laminating a combination of molybdenum (Mo) and silicon (Si) or molybdenum (Mo) and beryllium (Be) for about 40 cycles. The film thickness of each layer of the multilayer reflective film 50 is, for example, 2.8 nm for the Mo film and 4.2 nm for the Si film. Here, the portions that form the optical contrast (brightness and darkness) to be a pattern are the multilayer reflection film 50 and the absorption film 20.

基板６０には石英が用いられ、特にチタン（Ｔｉ）もしくはチタン酸化物(ＴｉＯ)を添加した合成石英を用いることが好ましい。合成石英は添加しない石英に比べて熱膨張率が低い特性をもつことが知られている。   Quartz is used for the substrate 60, and it is particularly preferable to use synthetic quartz to which titanium (Ti) or titanium oxide (TiO) is added. Synthetic quartz is known to have a lower coefficient of thermal expansion than quartz without addition.

裏面導電膜７０は露光装置への搭載に静電的吸着原理を利用した把持装置を用いるために形成される。裏面導電膜７０には、クロム（Ｃｒ）を主成分とし、酸素（Ｏ）及び窒素（Ｎ）の少なくとも１つを含む材料を用いることが好ましい。   The back conductive film 70 is formed in order to use a gripping device that uses the electrostatic adsorption principle for mounting in an exposure apparatus. The back conductive film 70 is preferably made of a material containing chromium (Cr) as a main component and at least one of oxygen (O) and nitrogen (N).

また、図示しないが、吸収膜２０と多層反射膜５０との間に、多層反射膜５０を保護するための保護膜４０と緩衝膜３０との両方の役割を果たす兼用膜を備えることができる。兼用膜の材料には、Ｒｕ（ルテニウム）を用いることが好ましい。   Although not shown, a dual-purpose film serving as both the protective film 40 and the buffer film 30 for protecting the multilayer reflective film 50 can be provided between the absorption film 20 and the multilayer reflective film 50. Ru (ruthenium) is preferably used as the material of the dual-purpose film.

以下、本発明の実施の形態に係る除塵機能付き反射型フォトマスク１００の機構を図２乃至図６を用いて説明する。図２（ａ）は本発明の実施の形態に係る防塵機能付き反射型フォトマスク１００の構造を示す概略断面図であり、図２（ｂ）は本発明の実施の形態に係る防塵機能付き反射型フォトマスク１００の構造を示す概略底面図である。   Hereinafter, the mechanism of the reflective photomask 100 with a dust removal function according to the embodiment of the present invention will be described with reference to FIGS. FIG. 2A is a schematic cross-sectional view showing the structure of a reflective photomask 100 with a dustproof function according to the embodiment of the present invention, and FIG. 2B is a reflection with a dustproof function according to the embodiment of the present invention. 2 is a schematic bottom view showing a structure of a mold photomask 100. FIG.

本発明の実施の形態に係る防塵機能の原理は磁場を利用するものであり、磁場の発生はアンペールの右ねじの法則によるものである。図２（ａ）に示すように、本発明の実施の形態に係る防塵機能付き反射型フォトマスク１００は、前述した反射型フォトマスク１００の低反射膜１０、吸収膜２０及び緩衝膜３０がパターン形成されたパターン領域１６０と、裏面導電膜７０の一部に薄膜コイル１１０とが形成されている。ここで、薄膜コイル１１０は裏面導電膜７０の一部をパターン形成することで得ることができる。また、図２（ｂ）に示すように、薄膜コイル１１０の両端部にはパット（電極）１３０が形成され、パット（電極）１３０が電源１４０に接続されている。   The principle of the dustproof function according to the embodiment of the present invention uses a magnetic field, and the generation of the magnetic field is based on Ampere's right-handed screw law. As shown in FIG. 2A, the reflective photomask 100 with a dustproof function according to the embodiment of the present invention has a pattern of the low reflective film 10, the absorption film 20 and the buffer film 30 of the reflective photomask 100 described above. The formed pattern region 160 and the thin film coil 110 are formed on a part of the back surface conductive film 70. Here, the thin film coil 110 can be obtained by patterning a part of the back surface conductive film 70. Further, as shown in FIG. 2B, pads (electrodes) 130 are formed at both ends of the thin film coil 110, and the pads (electrodes) 130 are connected to a power source 140.

次に、本発明の実施の形態に係る防塵機能付き反射型フォトマスク１００の磁界発生の原理について説明する。図３（ａ）及び（ｂ）は本発明の実施の形態に係る防塵機能付き反射型フォトマスク１００の磁界発生の原理を示す。図３（ａ）及び（ｂ）に示すように、電源１４０から直流電流をパッド（電極）１３１に負極、パッド１３２に正極で流した場合に、薄膜コイル１１０に磁場が発生し、磁力線１５０が発生する（図中矢印方向）。なお、電源１４０から流す電流は直流でも交流でも良く、適時選択することができる。磁場の強弱は電源１４０から供給する電流や、薄膜コイル１１０の巻き数や線幅などで調整することができ、磁力線１５０により磁性材料を元素に含む塵埃を吸引、捕獲して除塵作用を得ることができる。図３（ａ）に示すように、発生した磁力線１５０は反射型フォトマスク１００のパターン領域１６０を通過することとなり、反射型フォトマスク１００のパターン領域１６０において塵埃の吸引効果が発現してしまう。   Next, the principle of magnetic field generation in the reflective photomask 100 with a dustproof function according to the embodiment of the present invention will be described. 3A and 3B show the principle of magnetic field generation of the reflective photomask 100 with a dustproof function according to the embodiment of the present invention. As shown in FIGS. 3A and 3B, when a direct current is supplied from a power source 140 to a pad (electrode) 131 with a negative electrode and a pad 132 with a positive electrode, a magnetic field is generated in the thin film coil 110, and the magnetic field lines 150 are generated. It occurs (in the direction of the arrow in the figure). The current flowing from the power supply 140 may be direct current or alternating current, and can be selected as appropriate. The strength of the magnetic field can be adjusted by the current supplied from the power source 140, the number of turns and the line width of the thin film coil 110, etc., and the dust containing the magnetic material as an element is attracted and captured by the magnetic force lines 150 to obtain a dust removing action. Can do. As shown in FIG. 3A, the generated magnetic force lines 150 pass through the pattern region 160 of the reflective photomask 100, and a dust suction effect appears in the pattern region 160 of the reflective photomask 100.

そこで、図４（ａ）及び（ｂ）に示すように、吸引力を反射型フォトマスク１００のパターン領域１６０に対してより高磁力（磁束密度が高い）となる箇所を設けることで吸引力に勾配を付与する。磁束密度を高くする手段として高透磁率材料を用いた第１のヨーク１７０を反射型フォトマスク１００のパターン領域１６０よりも反射型フォトマスク１００の外周の全部又は一部に設ける。この第１のヨーク１７０内に磁力線が収束するので、吸引力が反射型フォトマスク１００のパターン領域１６０よりも強くすることができる。塵埃が第１のヨーク１７０側に引き寄せられることから、反射型フォトマスク１００のパターン領域１６０への塵埃付着を抑止することができる。図４（ａ）に示すように、第１のヨーク１７０は露光光学系の影響が無い限り、反射型フォトマスク１００のパターン面からできるだけ高いほうが、反射型フォトマスク１００のパターン領域１６０に対して斜めに飛来する塵埃に対して防護壁となることができる。また、図示しないが、第１のヨーク１７０を反射型フォトマスク１００の裏面側にさらに設けても良い。この場合、裏面導電膜７０の膜厚と同一かつ、同一機械的強度を有する物質に限定される。後述するが、反射型フォトマスク１００は露光装置内で反射型フォトマスク１００のパターン領域１６０を下方とし、その反対面側となる裏面導電膜７０を静電気の吸引力を利用した把持装置（静電チャック）で全面吸着するためである。膜厚を同一とする理由は把持において平面性を確保するためであり、機械的強度はチャッキング力により変形を受けた場合、平坦性の確保ができなくなるためである。第１のヨーク１７０の材料には、例えば、ＦｅＮｉ合金（パーマロイ）などを用いることが好ましい。   Therefore, as shown in FIGS. 4A and 4B, the attractive force can be reduced by providing a portion having a higher magnetic force (higher magnetic flux density) than the pattern region 160 of the reflective photomask 100. Give a gradient. As a means for increasing the magnetic flux density, the first yoke 170 using a high magnetic permeability material is provided on all or part of the outer periphery of the reflective photomask 100 rather than the pattern region 160 of the reflective photomask 100. Since the lines of magnetic force converge in the first yoke 170, the attractive force can be made stronger than the pattern region 160 of the reflective photomask 100. Since dust is attracted to the first yoke 170 side, dust adhesion to the pattern region 160 of the reflective photomask 100 can be suppressed. As shown in FIG. 4A, the first yoke 170 is as high as possible from the pattern surface of the reflective photomask 100 with respect to the pattern region 160 of the reflective photomask 100 as long as there is no influence of the exposure optical system. It can be a protective wall against dust flying obliquely. Although not shown, the first yoke 170 may be further provided on the back side of the reflective photomask 100. In this case, the material is limited to a material having the same mechanical strength as the film thickness of the back surface conductive film 70. As will be described later, the reflective photomask 100 has a patterning device 160 in the exposure apparatus with the pattern region 160 of the reflective photomask 100 facing downward, and a back surface conductive film 70 on the opposite side of the backside conductive film 70 utilizing electrostatic attraction. This is because the entire surface is adsorbed by the chuck). The reason for making the film thicknesses the same is to ensure flatness in gripping, and the mechanical strength cannot secure flatness when it is deformed by a chucking force. For example, an FeNi alloy (permalloy) is preferably used as the material of the first yoke 170.

図４（ａ）及び（ｂ）では第１のヨーク１７０は反射型フォトマスク１００のパターン領域１６０面側のみに設置したが、図５（ａ）及び（ｂ）に示すように、反射型フォトマスク１００の側面の全部又は一部に第２のヨーク１８０を設置してもよい。第２のヨーク１８０は磁力の及ぶ範囲を狭め、反射型フォトマスク１００から空間的に外側遠方の異物まで吸引することを抑制することができる。第２のヨーク１８０を設置する場合、一般に反射型フォトマスク１００の外形寸法は前述した業界規格が定められているため、その範囲に収める必要がある。第１及び第２のヨーク１７０、１８０を薄膜で成膜する手段としては鍍金や塗工、スパッタリング法が挙げられる。スパッタリング法による一例として、例えば数１０ｎｍの薄膜の形成が可能な磁性材料を用いることが好ましい。磁性材料としてはハードディスクに用いられるＣｏＣｒＴａ系合金、ＣｏＣｒＰｔ系合金を用いることが好ましい。   4A and 4B, the first yoke 170 is disposed only on the pattern region 160 surface side of the reflective photomask 100. However, as shown in FIGS. The second yoke 180 may be provided on all or part of the side surface of the mask 100. The second yoke 180 can narrow the range in which the magnetic force is applied, and can suppress attraction from the reflective photomask 100 to a foreign object that is spatially far away. When the second yoke 180 is installed, the external dimensions of the reflective photomask 100 are generally set in the above-described industry standards, and thus must be within that range. Examples of means for forming the first and second yokes 170 and 180 as thin films include plating, coating, and sputtering. As an example of the sputtering method, it is preferable to use a magnetic material capable of forming a thin film of several tens of nm, for example. As the magnetic material, it is preferable to use a CoCrTa alloy or a CoCrPt alloy used for a hard disk.

図６（ａ）及び（ｂ）は本発明の実施の形態に係る反射型フォトマスク１００の撓み及び反射型フォトマスク１００のパターン領域１６０と裏面導電膜７０との関係を示す。図６（ａ）及び（ｂ）を参照してパターン領域１６０と裏面導電膜７０とについて説明する。図６（ａ）に示すように、本発明の実施の形態に係る反射型フォトマスク１００は露光装置内で反射型フォトマスク１００のパターン領域１６０を下方とし、その対向面側の裏面導電膜７０を静電気の吸引力を利用した把持装置２１０（静電チャック）で全面吸着する。これは反射型フォトマスク１００のパターン領域１６０への重力落下による異物付着を避ける目的が一要因としてある。裏面導電膜７０の領域は反射型フォトマスク１００のパターン領域１６０よりも外形寸法が大きいほうが望ましい。小さい場合には図６（ｂ）で示すように段差Ａにより反射型フォトマスク１００に対して応力が発生し、撓みが生じてパターン領域１６０にも歪みが発生する恐れがある。   FIGS. 6A and 6B show the relationship between the deflection of the reflective photomask 100 and the pattern region 160 of the reflective photomask 100 and the back conductive film 70 according to the embodiment of the present invention. The pattern region 160 and the back surface conductive film 70 will be described with reference to FIGS. As shown in FIG. 6A, the reflective photomask 100 according to the embodiment of the present invention has the pattern region 160 of the reflective photomask 100 in the exposure apparatus, and the back conductive film 70 on the opposite surface side. Is attracted to the entire surface by a gripping device 210 (electrostatic chuck) using electrostatic attraction. This is partly due to the purpose of avoiding foreign matter adhering to the pattern area 160 of the reflective photomask 100 due to gravity drop. The region of the back surface conductive film 70 preferably has a larger outer dimension than the pattern region 160 of the reflective photomask 100. In the case of being small, as shown in FIG. 6B, a stress is generated on the reflective photomask 100 by the step A, and there is a possibility that the pattern region 160 may be distorted due to bending.

図６（ａ）及び（ｂ）を参照して裏面導電膜７０、薄膜コイル１１０及びパット１３０について説明する。上述した通り、段差Ａによる撓みを発生させないように、裏面導電膜７０、薄膜コイル１１０及びパット１３０が同一平面であることが好ましい。また、静電チャック２１０による把持のために導電性が必要となり、薄膜コイル１１０及びパット１３０に電流を流すことから導電性が必要となる。図１に示すように、これらの部材は反射型フォトマスク１００の構造である裏面導電膜７０が元来導電性を必要としていることから兼用できる利点がある。   The back conductive film 70, the thin film coil 110, and the pad 130 will be described with reference to FIGS. As described above, the back conductive film 70, the thin film coil 110, and the pad 130 are preferably flush with each other so as not to cause bending due to the step A. In addition, conductivity is required for gripping by the electrostatic chuck 210, and conductivity is required because current flows through the thin film coil 110 and the pad 130. As shown in FIG. 1, these members have an advantage that they can be used together because the back conductive film 70 which is the structure of the reflective photomask 100 originally needs conductivity.

図１に示すように、反射型フォトマスク１００を構成する材料及び裏面導電膜７０（薄膜コイル１１０、パット１３０を含む）の材料は、導電性の非磁性材料を用いることで非帯電物質を含む塵埃を効果的に吸収及び捕獲することができる。具体的に、裏面導電膜７０の材料は、窒化クロム（ＣｒＮ）を用いることが好ましい。ＣｒＮは、スパッタリング法を用いて薄膜を成膜して、フォトリソグラフィ法によりパターンを形成することができる。導電性の磁性材料では、電磁石効果により吸引効果は向上するが、吸引点が第１のヨーク１７０ではなく、反射型フォトマスク１００のパターン領域１６０の面にも発現してしまう。さらに、薄膜コイル１１０に電流を流さない場合においても少なくとも一方が磁性材料である限り、反射型フォトマスク１００のパターン領域１６０に磁性体の付着が発生する欠点が避けられなくなってしまう。   As shown in FIG. 1, the material constituting the reflective photomask 100 and the material of the back surface conductive film 70 (including the thin film coil 110 and the pad 130) include a non-charged substance by using a conductive nonmagnetic material. Dust can be absorbed and captured effectively. Specifically, it is preferable to use chromium nitride (CrN) as the material of the back surface conductive film 70. CrN can form a thin film using a sputtering method and form a pattern using a photolithography method. In the conductive magnetic material, the attraction effect is improved by the electromagnet effect, but the attraction point appears not on the first yoke 170 but also on the surface of the pattern region 160 of the reflective photomask 100. Further, even when no current is passed through the thin film coil 110, as long as at least one is made of a magnetic material, the defect that the magnetic substance adheres to the pattern region 160 of the reflective photomask 100 is unavoidable.

上述した本発明の実施の形態に係る反射型フォトマスク１００を露光装置３００に設置し、露光工程中で除塵作用を有する場合について説明する。図７（ａ）及び（ｂ）は本発明の実施の形態に係る除塵機能付き反射型フォトマスク１００を静電チャック２１０に把持する機構を示し、露光工程中で除塵作用を有することを示す。図７（ａ）及び（ｂ）に示すように、露光装置内における半導体基板への転写露光工程では、反射型フォトマスク１００が静電チャック２１０に把持搭載される。なお、図７（ａ）及び（ｂ）は露光装置内部の一部を示すが、光源、マスクへの集光光学系、半導体基板への投影光学系などは省略する。静電チャック２１０は静電吸着を発現させるためにその内部に電荷を供給するための電極２２０を有する。本発明の実施の形態に係る反射型フォトマスク１００への電流の供給もこの静電チャック２１０の内部に配線２３０と接点２４０とを設け、ここから反射型フォトマスク１００のパット１３０に供給すればよい。   A case will be described in which the above-described reflective photomask 100 according to the embodiment of the present invention is installed in the exposure apparatus 300 and has a dust removing action during the exposure process. FIGS. 7A and 7B show a mechanism for holding the reflective photomask 100 with a dust removal function according to the embodiment of the present invention on the electrostatic chuck 210 and show that it has a dust removal action during the exposure process. As shown in FIGS. 7A and 7B, the reflective photomask 100 is gripped and mounted on the electrostatic chuck 210 in the transfer exposure process to the semiconductor substrate in the exposure apparatus. 7A and 7B show a part of the inside of the exposure apparatus, but a light source, a condensing optical system for a mask, a projection optical system for a semiconductor substrate, and the like are omitted. The electrostatic chuck 210 has an electrode 220 for supplying a charge to the inside in order to develop electrostatic adsorption. In the current supply to the reflective photomask 100 according to the embodiment of the present invention, the wiring 230 and the contact 240 are provided inside the electrostatic chuck 210 and supplied from here to the pad 130 of the reflective photomask 100. Good.

次に、本発明の実施の形態に係る反射型フォトマスク１００をロボット等で搬送する場合について説明する。図８は、本発明の実施の形態に係る除塵機能付き反射型フォトマスク１００と把持機構を備えた露光装置とさらに露光装置内での搬送工程において除塵作用を有することを示す。図８に示すように、露光装置３００の内部は真空環境となる。図８では光源、マスクへの集光光学系、半導体基板への投影光学系などは省略する。反射型フォトマスク１００は露光装置３００の内部のマスクライブラリ３１０に格納される。マスクライブラリ３１０も真空環境とする。図８では多段構造を示しているが、枚葉型であってもよく、数量に制限はない。このマスクライブラリ３１０では二重ケースの少なくとも内側ケース３２０内に格納されている。この二重ケースの内側ケース３２０からの取り出し動作から静電チャック２１０に至るまでは機械的動作を行う搬送ロボット３３０により取り出し、移動が行われ、静電チャック２１０に装着される。この間、反射型フォトマスク１００はなんら防塵のための保護を受けない。そこで、搬送ロボット３３０のアーム３４０に反射型フォトマスク１００のパッド１３０に対応した位置に、電流の供給を可能にする接点３５０を設け、電源１４０から配線３６０を通じて電流をする流すことにより、取り出し、移動、装着工程においても本発明の除塵作用が働く露光装置が実現する。   Next, a case where the reflective photomask 100 according to the embodiment of the present invention is transported by a robot or the like will be described. FIG. 8 shows that the reflection type photomask 100 with a dust removal function according to the embodiment of the present invention, an exposure apparatus provided with a gripping mechanism, and a dust removal function in a transport process in the exposure apparatus. As shown in FIG. 8, the inside of the exposure apparatus 300 is in a vacuum environment. In FIG. 8, a light source, a condensing optical system for a mask, a projection optical system for a semiconductor substrate, and the like are omitted. The reflective photomask 100 is stored in a mask library 310 inside the exposure apparatus 300. The mask library 310 is also a vacuum environment. Although FIG. 8 shows a multi-stage structure, it may be a single-wafer type and there is no limit on the quantity. In this mask library 310, it is stored in at least the inner case 320 of the double case. From the take-out operation from the inner case 320 of the double case to the electrostatic chuck 210, it is taken out and moved by the transfer robot 330 that performs mechanical operation, and is attached to the electrostatic chuck 210. During this time, the reflective photomask 100 does not receive any protection against dust. Therefore, the arm 340 of the transfer robot 330 is provided with a contact 350 that enables supply of current at a position corresponding to the pad 130 of the reflective photomask 100, and is taken out by flowing current from the power supply 140 through the wiring 360. The exposure apparatus in which the dust removing action of the present invention works also in the moving and mounting processes is realized.

次に、反射型フォトマスク１００を露光装置３００に配置して、露光を行う露光方法について説明する。本発明の実施の形態に係る露光方法は、露光装置３００内で反射型フォトマスク１００を静電チャック２１０に配置する。露光装置３００内で、反射型フォトマスク１００の薄膜コイル１１０に電流を流してパターン形成領域に塵埃が付着するのを防ぎつつ極端紫外線で露光を行う。このように、露光を行うことにより、半導体製造の歩留まりを向上させることができる。   Next, an exposure method for performing exposure by placing the reflective photomask 100 in the exposure apparatus 300 will be described. In the exposure method according to the embodiment of the present invention, the reflective photomask 100 is disposed on the electrostatic chuck 210 in the exposure apparatus 300. In the exposure apparatus 300, an electric current is passed through the thin film coil 110 of the reflective photomask 100 to perform exposure with extreme ultraviolet rays while preventing dust from adhering to the pattern formation region. Thus, by performing exposure, the yield of semiconductor manufacturing can be improved.

本発明の極端紫外線リソグラフィ用反射型フォトマスクは、露光工程中で除塵作用が反射型フォトマスクに働くために、半導体製造の歩留まり向上が期待できる。   The reflection type photomask for extreme ultraviolet lithography of the present invention can be expected to improve the yield of semiconductor manufacturing because the dust removing action acts on the reflection type photomask during the exposure process.

本実施の形態に係る反射型フォトマスクの構造を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the reflection type photomask which concerns on this Embodiment. （ａ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの構造を示す概略断面図であり、（ｂ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの構造を示す概略底面図である。(A) is a schematic sectional drawing which shows the structure of the reflective photomask with a dust removal function which concerns on embodiment of this invention, (b) is the reflective photomask with a dust removal function which concerns on embodiment of this invention It is a schematic bottom view which shows the structure of these. （ａ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの磁界発生の原理を示す概略断面図であり、（ｂ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの磁界発生の原理を示す概略底面図である。(A) is a schematic sectional drawing which shows the principle of the magnetic field generation | occurrence | production of the reflective photomask with a dust removal function which concerns on embodiment of this invention, (b) is a reflection with a dust removal function which concerns on embodiment of this invention. It is a schematic bottom view which shows the principle of the magnetic field generation of a type photomask. （ａ）は、本発明の実施の形態に係る除塵機能付きフォトマスクの構造と磁界の収束作用を示す概略断面図であり、（ｂ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの構造と磁界の収束作用を示す概略底面図である。(A) is a schematic sectional drawing which shows the structure of the photomask with a dust removal function which concerns on embodiment of this invention, and the convergence effect | action of a magnetic field, (b) is a reflection with dust removal function which concerns on embodiment of this invention It is a schematic bottom view which shows the structure of a type | mold photomask, and the convergence effect | action of a magnetic field. （ａ）は、本発明の実施の形態に係る除塵機能付きフォトマスクの構造と磁界の収束作用を示す図であり、（ｂ）は、本発明の実施の形態に係る除塵機能付き反射型フォトマスクの構造と磁界の収束作用を示す概略底面図である。(A) is a figure which shows the structure of the photomask with a dust removal function which concerns on embodiment of this invention, and the convergence effect | action of a magnetic field, (b) is a reflective photo with dust removal function which concerns on embodiment of this invention It is a schematic bottom view which shows the structure of a mask, and the convergence effect | action of a magnetic field. （ａ）及び（ｂ）は、本発明の実施の形態に係る反射型フォトマスクの撓みと反射型フォトマスク上に形成されたパターン領域の関係を示す概略断面図である。(A) And (b) is a schematic sectional drawing which shows the relationship between the bending of the reflection type photomask which concerns on embodiment of this invention, and the pattern area | region formed on the reflection type photomask. 本発明の実施の形態に係る除塵機能付き反射型フォトマスクを静電チャックに把持する機構を示す図である。It is a figure which shows the mechanism which hold | grips the reflective photomask with a dust removal function which concerns on embodiment of this invention to an electrostatic chuck. 本発明の実施の形態に係る除塵機能付き反射型フォトマスクと把持機構を備えた露光装置の搬送工程とを示す概略断面図である。It is a schematic sectional drawing which shows the conveyance process of the exposure apparatus provided with the reflective photomask with a dust removal function which concerns on embodiment of this invention, and a holding mechanism.

符号の説明Explanation of symbols

１０：低反射膜、２０：吸収膜、３０：緩衝膜、４０：保護膜、５０：多層反射膜、６０：基板、７０：裏面導電膜、１００：反射型フォトマスク、１１０：薄膜コイル、１３０：パット、１４０：電源、１５０：磁力線、１６０：パターン領域、１７０：第１のヨーク、１８０：第２のヨーク、２１０：静電チャック、２２０：電極、２３０：配線、２４０：接点、３００：露光装置、３１０：マスクライブラリ、３２０：内側ケース、３３０：搬送ロボット、３４０：アーム、３５０：接点、３６０：配線 10: Low reflection film, 20: Absorption film, 30: Buffer film, 40: Protective film, 50: Multi-layer reflection film, 60: Substrate, 70: Back conductive film, 100: Reflective photomask, 110: Thin film coil, 130 : Pad, 140: Power supply, 150: Magnetic field line, 160: Pattern region, 170: First yoke, 180: Second yoke, 210: Electrostatic chuck, 220: Electrode, 230: Wiring, 240: Contact, 300: Exposure apparatus, 310: mask library, 320: inner case, 330: transfer robot, 340: arm, 350: contact, 360: wiring

Claims (7)

表面にパターン形成領域を有する反射型フォトマスクにおいて、
前記反射型フォトマスクの裏面に薄膜コイルが形成され、前記薄膜コイルに電流を流して前記パターン形成領域に塵埃が付着するのを防ぐよう構成され、
前記表面の前記パターン形成領域の外周の全部又は一部に第１のヨークを配置したことを特徴とする反射型フォトマスク。 In a reflective photomask having a pattern formation region on the surface,
A thin film coil is formed on the back surface of the reflective photomask, and a current is passed through the thin film coil to prevent dust from adhering to the pattern formation region .
A reflective photomask , wherein a first yoke is disposed on all or part of the outer periphery of the pattern formation region on the surface . 請求項１に記載の反射型フォトマスクにおいて、
前記反射型フォトマスクの側面の全部又は一部に第２のヨークを配置したことを特徴とする反射型フォトマスク。 The reflective photomask according to claim 1,
A reflective photomask comprising a second yoke disposed on all or a part of a side surface of the reflective photomask. 前記反射型フォトマスクは、
基板と、
前記基板上に形成された多層反射膜と、
前記多層反射膜上に形成された保護膜と、
前記保護膜上にパターン形成された緩衝膜と、
前記緩衝膜上にパターン形成された吸収膜と、
前記吸収膜上にパターン形成された低反射膜を具備することを特徴とする請求項１又は２に記載の反射型フォトマスク。 The reflective photomask is
A substrate,
A multilayer reflective film formed on the substrate;
A protective film formed on the multilayer reflective film;
A buffer film patterned on the protective film;
An absorption film patterned on the buffer film;
Reflective photomask according to claim 1 or 2, characterized in that it comprises a low-reflection film which is patterned on the absorbing layer. 前記薄膜コイルは導電性の非磁性材料であることを特徴とする請求項１乃至３のいずれ１項に記載の反射型フォトマスク。 The thin film coil is reflective photomask according to any one of claims 1 to 3, characterized in that a non-magnetic material conductivity. 前記薄膜コイルを構成する裏面導電膜が、前記パターン形成領域より大きいことを特徴とする請求項１乃至請求項４のいずれか１項に記載の反射型フォトマスク。 The back-surface conductive film constituting the thin film coil, a reflective photomask according to any one of claims 1 to 4, characterized in that larger than the pattern formation region. 請求項１乃至請求項５のいずれかに記載の反射型フォトマスクを把持する把持装置において、前記薄膜コイルに電流を流すための手段を備えることを特徴とする把持装置。 In gripping device for gripping a reflective photomask according to any one of claims 1 to 5, the gripping device characterized by comprising means for supplying a current to the thin film coil. 請求項１乃至請求項５のいずれかに記載の反射型フォトマスクに露光光を用いて所望のパターンに転写する露光装置において、
前記反射型フォトマスクを把持する静電チャックは、前記薄膜コイルに電流を流すための手段を備えることを特徴とする露光装置。 In the exposure apparatus which transfers to a desired pattern using exposure light to the reflection type photomask in any one of Claims 1 thru | or 5 ,
An exposure apparatus, wherein the electrostatic chuck for gripping the reflective photomask includes means for causing a current to flow through the thin film coil.
JP2008210137A 2008-08-18 2008-08-18 Reflective photomask, gripping apparatus, and exposure apparatus Expired - Fee Related JP5304097B2 (en)

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