TW201915594A - Semiconductor wafer processing method, semiconductor wafer processing system and method for cleaning semiconductor wafer processing system - Google Patents

Abstract

A semiconductor wafer processing method, a semiconductor wafer processing system and a method for cleaning a semiconductor wafer processing system are provided. The method for cleaning a semiconductor processing system includes placing a cleaning device over an electrostatic chuck for masks in a vacuum chamber. A polymer layer of the cleaning device is absorbed to the electrostatic chuck for masks. When the cleaning device has been absorbed to the electrostatic chuck for masks for a first time period, and the cleaning device is separated from the electrostatic chuck for masks.

Description

 Semiconductor wafer processing method, system and system cleaning method  

Embodiments of the present invention relate to a method of cleaning a semiconductor wafer processing system, and more particularly to a method of cleaning a photomask electrostatic mount.

The semiconductor integrated circuit (IC) industry has grown rapidly for some time. Technological advances in IC materials and design have made each generation of ICs smaller and more complex than previous generation ICs. A new generation of ICs has a large functional density (such as the number of interconnect components in a fixed wafer area), and a smaller size (such as the smallest component or wiring formed by the process). Process size reduction is often beneficial to increase process efficiency and reduce associated costs. The reduced size of the process increases the complexity of the process, but the advantages of shrinking the process size are obvious, so a smaller IC process is required. For example, the demand for high-resolution lithography processes continues to grow.

One of the lithography technologies is extreme ultraviolet (EUV) lithography. Extreme ultraviolet lithography exposes the reticle with extreme ultraviolet light to form a pattern on the substrate. In general, the reticle used in extreme ultraviolet lithography is called an extreme ultraviolet (EUV) reticle, and the extreme ultraviolet lithography technique uses a wavelength of light between about 1 nm and about 100 nm.

Existing lithography techniques are generally suitable for a specific purpose and cannot be used in all areas. For example, repeated use of an extreme ultraviolet reticle in an extreme ultraviolet lithography process would create problems.

Embodiments of the present invention provide a method of cleaning a semiconductor wafer processing system. The cleaning method of the above semiconductor wafer processing system includes placing a cleaning device over a photomask electrostatic mount in a vacuum chamber. The method of cleaning a semiconductor wafer processing system further includes adsorbing a layer of a polymer material of the cleaning device to the photomask electrostatic pad. The cleaning method of the semiconductor wafer processing system further includes separating the cleaning device from the photomask electrostatic pad when the cleaning device is adsorbed to the photomask electrostatic pad and passes a first time.

Embodiments of the present invention provide a semiconductor wafer processing method. The semiconductor wafer processing method includes placing a cleaning device over a photomask electrostatic mount in a vacuum chamber. The semiconductor wafer processing method further includes adsorbing a polymer material layer of one of the cleaning devices to the photomask electrostatic pad through the photomask electrostatic pad. The semiconductor wafer processing method further includes placing a semiconductor wafer over a wafer holder after the cleaning device is adsorbed to the photomask electrostatic pad. The semiconductor wafer processing method further includes performing a first semiconductor process on the semiconductor wafer. The semiconductor wafer processing method further includes separating the cleaning device from the photomask electrostatic pad and separating the semiconductor wafer from the wafer holder after performing the first semiconductor process.

Embodiments of the present invention provide a semiconductor wafer processing system. The semiconductor wafer processing system includes a vacuum chamber, a first cleaning device, a photomask electrostatic mount, a transfer device, and a controller. The first cleaning device is disposed in the vacuum chamber. The first cleaning device comprises a first substrate, a reflective structure, a protective layer, an absorbing layer, a conductive layer and a first layer of polymeric material. The material of the first substrate comprises a low thermal expansion material. The reflective structure is disposed above a front side surface of the substrate. The protective layer is disposed above the reflective structure. The absorbing layer is disposed above the protective layer. The conductive layer is disposed above a rear side surface of the substrate. The first polymer material layer is disposed above the conductive layer. The photomask electrostatic mount is disposed in the vacuum chamber. The transfer device is disposed in the vacuum chamber to selectively place the first cleaning device above the photomask electrostatic seat. The controller is disposed in the vacuum chamber to control the reticle electrostatic mount and the transfer device. The photomask electrostatic seat is electrostatically attracted to the first cleaning device.

200A, 200B, 200C‧‧‧ substrates

201‧‧‧ front side surface

202‧‧‧矽

203‧‧‧Back surface

204‧‧‧ molybdenum layer

206‧‧‧Reflective structure

210‧‧‧Protective layer

211‧‧‧Opacity zone

212‧‧‧ boron nitride layer

213‧‧‧Reflective zone

214‧‧‧Boronium oxide layer

216‧‧‧absorbing layer

218‧‧‧ Conductive layer

220‧‧‧ polymer material layer

226A, 226B‧‧‧ pattern layer

228A, 228B‧‧ ‧ protective layer

230, 230A, 230B‧‧‧ mask parts

302‧‧‧vacuum chamber

304‧‧‧ray source

306‧‧‧Photomask electrostatic seat

307‧‧‧Adsorption surface

308‧‧‧electrode

309‧‧‧Contaminants

310‧‧‧Transport device

312‧‧‧ Controller

314‧‧‧ Wafer Block

316‧‧‧Detection device

320‧‧‧Semiconductor wafer

322‧‧‧vacuum pump

500, 500A, 500B‧‧‧ cleaning devices

502, 504, 506, 508, 510, 602, 604, 606, 608, 610, 612, 614, 616, 618, 620, 622‧‧‧ operations

550‧‧‧Methods for cleaning semiconductor wafer processing systems

600‧‧‧Semiconductor Wafer Processing System

650‧‧‧Semiconductor wafer processing method

700‧‧‧Reflective mask

L‧‧‧ Extreme ultraviolet light

T _N ‧‧‧Time

T‧‧‧ interval

1A, 1B are schematic illustrations of a cleaning apparatus for a semiconductor wafer processing system in accordance with some embodiments.

2 is a block diagram of a semiconductor wafer processing system in accordance with some embodiments.

3A is a top plan view of a photomask electrostatic mount of a semiconductor wafer processing system in accordance with some embodiments.

3B is a cross-sectional view taken along line A-A' of FIG. 3A, showing a cross-sectional view of a photomask electrostatic mount of a semiconductor wafer processing system in accordance with some embodiments.

4 is a schematic illustration of a reflective reticle of a semiconductor wafer processing system in accordance with some embodiments.

Figure 5 is a flow diagram of a method of cleaning a semiconductor wafer processing system of some embodiments.

6A, 6B are flow diagrams of semiconductor wafer processing methods of some embodiments.

7A, 7B, 7C, 7D, and 7E show a semiconductor wafer processing system cleaning method corresponding to some embodiments shown in FIG. 5 and a semiconductor wafer processing method according to some embodiments shown in FIGS. 6A and 6B. A block diagram of a semiconductor wafer processing system at different stages of operation.

8A, 8B, and 8C are schematic diagrams showing different stages of operation of the cleaning apparatus and the reticle electrostatic mount of the semiconductor wafer processing system in the semiconductor wafer processing system and the semiconductor wafer processing method according to some embodiments.

The following disclosure provides many different embodiments or examples to implement various features of the present invention. The disclosure of the disclosure below is a specific example of the various components and their arrangement in order to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the following description of the present disclosure describes forming a first feature on or above a second feature, that is, it includes an embodiment in which the formed first feature is in direct contact with the second feature. Also included is an embodiment in which additional features may be formed between the first feature and the second feature described above, such that the first feature may not be in direct contact with the second feature. In addition, different examples in the disclosure may use repeated reference symbols and/or indicia. These repetitions are not intended to limit the relationship between the various embodiments and/or the appearance structures for the purpose of simplicity and clarity.

Furthermore, for convenience of describing the relationship of one element or feature in the drawings to another (plural) element or (complex) feature, space-related terms such as "below", "below", "Lower", "above", "upper" and similar terms. Spatially relative terms are used to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. The device may also be additionally positioned (eg, rotated 90 degrees or at other orientations) and the description of the spatially relevant terms used may be interpreted accordingly.

The vocabulary of the first and second terms used hereinafter is for illustrative purposes only and is not intended to limit or limit the scope of the patent. In addition, the first feature and the second feature are not limited to the same or different features.

In the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate the marking. It is to be understood that elements not specifically described or illustrated may be in various forms well known to those skilled in the art.

Some embodiments of the present disclosure are described below. FIG. 1A is a schematic illustration of a cleaning apparatus 500A of a semiconductor wafer processing system in accordance with some embodiments. In some embodiments, the cleaning device 500A is configured to be attached to a reticle electrostatic mount of an extreme ultraviolet (EUV) lithography system to clean the reticle electrostatic mount. In some embodiments shown in FIG. 1A, cleaning device 500A includes a substrate 200A, a reflective structure 206, a protective layer 210, an absorber layer 216, a conductive layer 218, and a layer of polymeric material 220.

As shown in FIG. 1A, in some embodiments, the substrate 200A of the cleaning device 500A has a front side surface 201 and a rear side surface 203 with respect to the front side surface 201 described above. The material of the substrate 200A may include a low thermal expansion metal (LTEM). The aforementioned low thermal expansion material may comprise doped titanium oxide (TiO ₂₎ of silicon oxide (SiO _2), and / or other low thermal expansion material. The substrate 200A formed of a low thermal expansion material minimizes image distortion problems caused by the heating mask. In some embodiments, the materials included in some embodiments have a low defect level and a smooth surface.

As shown in FIG. 1A, the reflective structure 206 of the cleaning device 500A is disposed above the front side surface 201 of the substrate 200A. In some embodiments, the reflective structure 206 is a multi-layer structure. According to the Fresnel equation, when light passes through the interface of two materials of different refractive indices, light reflection occurs. The greater the difference in refractive index, the larger the reflected light. In some embodiments, to increase the intensity of the reflected light, the number of multi-layer interfaces of alternating materials may be increased to allow light constructive interference at each of the different interfaces. In some embodiments, the reflective structure 206 includes a plurality of pairs of films, such as a molybdenum/germanium (Mo/Si) film pair composed of a tantalum layer 202 and a molybdenum layer 204, ie, the molybdenum layer 204 in each film pair is located in the tantalum layer 202. Above or below. In some embodiments, reflective structure 206 comprises a molybdenum/niobium (Mo/Be) film pair, or any suitable material having a high reflectivity for extreme ultraviolet (EUV) wavelengths. The thickness of each layer of reflective structure 206 depends on the wavelength of the EUV and the angle of incidence. Adjusting the thickness of the reflective structure 206 (or the thickness of the film pair) allows for maximum constructive interference of the EUV rays reflected by each interface and allows the reflective structure 206 to have minimal absorption of EUV light. Reflective structure 206 can be selected to have a high reflectivity for a selected ray species and/or wavelength. In some embodiments, the number of pairs of films in reflective structure 206 is between 20 and 80, although any number of film pairs are possible. In some embodiments, reflective structure 206 comprises forty pairs of molybdenum layer 204/germanium layer 202.

As shown in FIG. 1A, the protective layer 210 of the cleaning device 500A is disposed above the reflective structure 206. In some embodiments, the protective layer 210 disposed over the reflective structure 206 serves to prevent oxidation of the reflective structure 206. In some embodiments, the protective layer 210 can include a single film or a multilayer film to have additional functionality. In some embodiments, the protective layer includes a cap layer (not shown) on the reflective structure 206, and a buffer layer (not shown) on the cap layer. A cap layer can be used to prevent oxidation of the reflective structure 206. In some embodiments, the material of the cap layer comprises tantalum and has a thickness of about 4 nm to 7 nm. In some embodiments, a cap layer may be formed using a low temperature deposition process to avoid interdiffusion of the reflective structures 206. A buffer layer is formed over the cap layer as an etch stop layer in the patterning or repair process of the absorber layer 216. The buffer layer and the absorber layer 216 have different etching characteristics. In some embodiments, the material of the buffer layer comprises ruthenium (Ru), a ruthenium compound such as ruthenium boride (RuB) or ruthenium (RuSi), chromium (Cr), chromium oxide (CrO), or chromium nitride (CrN). . In some embodiments, a buffer layer can be formed using a low temperature deposition process to avoid interdiffusion of the reflective structures 206.

As shown in FIG. 1A, the absorbing layer 216 of the cleaning device 500A is disposed above the protective layer 210. In some embodiments, the absorbing layer 216 disposed over the reflective structure 206 absorbs radiation in the EUV wavelength range that is illuminated above the front side surface 201 of the substrate 200A of the cleaning device 500A. The absorbing layer 216 may include a plurality of film layers, and the material of each film layer may include chromium, chromium oxide, chromium nitride, titanium, titanium oxide, titanium nitride, tantalum, hafnium oxide, tantalum nitride, niobium oxynitride, nitrogen. Boron bismuth, boron oxynitride, boron oxynitride, aluminum, aluminum-copper, aluminum oxide, silver, silver oxide, palladium, rhodium, molybdenum, other suitable materials or combinations thereof. In some embodiments as shown in FIG. 1A, the absorber layer 216 includes a boron nitride tantalum (TaBN) layer 212 over the protective layer 210 and a boron oxide tantalum (TaBO) over the boron nitride tantalum (TaBN) layer 212. ) Layer 214. In some embodiments, the boron nitride (TaBN) layer 212 has a thickness of between about 50 nm and 80 nm, such as about 68 nm. In some embodiments, the boron oxide lanthanum (TaBO) layer 214 has a thickness of between about 1 nm and 10 nm, such as about 2 nm.

In some embodiments as shown in FIG. 1A, the absorber layer 216 may be patterned in accordance with an integrated circuit (IC) layout pattern (or a simple IC pattern) to define an opaque region 211 and a reflective region 213. The absorbent layer 216 is retained in the opaque zone 211 of the cleaning device 500A and the absorbent layer 216 is removed in the reflective zone 213 of the cleaning device 500A.

As shown in FIG. 1A, a conductive layer 218 can be formed on the rear side surface 203 of the substrate 200A of the cleaning device 500A for the purpose of electrostatic fixing. In some embodiments, the material of the conductive layer 218 includes chromium nitride (CrN) or other suitable conductive material. In some embodiments, the conductive layer 218 has a thickness of about 50 nm to 100 nm, such as about 70 nm.

As shown in FIG. 1A, the polymer material layer 220 of the cleaning device 500A is disposed above the rear side surface 203 of the substrate 200A and above the conductive layer 218. The polymer material layer 220 of the cleaning device 500A can be electrostatically adsorbed to, for example, an electrostatic chuck (e-chuck) of the EUV lithography system, and the adhesion of the polymer material layer 220 itself will be located at the radome electrostatic seat. The contaminant adheres to the contaminant, and when the cleaning device 500A is separated from the photomask electrostatic seat, the contaminant can be simultaneously removed from the surface of the photomask electrostatic seat, thereby achieving the effect of cleaning the photomask electrostatic seat. The layer of polymeric material 220 may be comprised of a polymer of elastomeric polymer or a polymer having controlled surface tack and which is not transferred to the electrostatic mount of the reticle. In some embodiments, the material of the polymer material layer 220 includes polyimide, polyvinyl alcohol (PVA), or other suitable materials. In some embodiments, the polymeric material layer 220 includes a metal compound to enhance electrostatic attraction between the photomask and the photomask. In some embodiments, the thickness of the polymeric material layer 220 is greater than or equal to a predetermined thickness. In some embodiments, the polymeric material layer 220 has a thickness of between about 5 [mu]m and 10 [mu]m, such as about 8 [mu]m.

In some embodiments, substrate 200A, reflective structure 206, protective layer 210, absorber layer 216, and conductive layer 218 of cleaning device 500A are considered a reticle portion 230A of cleaning device 500A. The reticle portion 230A of the cleaning device 500A can serve as a reflective mask for the EUV lithography system.

FIG. 1B is a schematic illustration of a cleaning apparatus 500B of a semiconductor wafer processing system in accordance with some embodiments. In some embodiments, the cleaning device 500B is used to adsorb to the reticle electrostatic mount of the EUV lithography system to clean the reticle electrostatic mount. In some embodiments illustrated in FIG. 1B, cleaning device 500A includes substrate 200B, metal layers 226A and 226B, protective layers 228A and 228B, and polymer material layer 220.

As shown in FIG. 1B, in some embodiments, the substrate 200B of the cleaning device 500B has a front side surface 201 and a rear side surface 203 with respect to the front side surface 201 described above. The material of the substrate 200B may include germanium. In some embodiments, the substrate 200B is, for example, quartz or soda-lime glass.

As shown in FIG. 1B, the metal layers 226A and 226B of the cleaning device 500B are disposed above the front side surface 201 and the rear side surface 203 of the substrate 200B, respectively. In some embodiments, the materials of metal layers 226A and 226B include chromium, aluminum, or other suitable metallic materials. Metal layers 226A and 226B may be formed by sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), laser deposition, and/or atomic layer deposition (ALD). In some embodiments, metal layers 226A and 226B have the same thickness. In some embodiments, metal layers 226A and 226B have a thickness of between about 40 nm and 70 nm, such as about 55 nm.

As shown in FIG. 1B, protective layers 228A and 228B of cleaning device 500B are disposed over metal layers 226A and 226B, respectively. In some embodiments, the protective layers 228A and 228B serve to prevent oxidation of the underlying metal layers 226A and 226B. In some embodiments, the materials of the protective layers 228A and 228B include chromium nitride, chromium oxide, or chromium oxynitride. The protective layers 228A and 228B may be formed by sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), laser deposition, and/or atomic layer deposition (ALD). In some embodiments, the protective layers 228A and 228B have the same thickness. In some embodiments, the protective layers 228A and 228B have a thickness of about 10 nm to 30 nm, such as about 18 nm.

As shown in FIG. 1B, the polymer material layer 220 of the cleaning device 500B is disposed above the rear side surface 203 of the substrate 200B and above the protective layer 228B. The polymer material layer 220 of the cleaning device 500B can be electrostatically adsorbed to an electrostatic chuck (e-chuck) such as an EUV photolithography system, using the adhesion of the polymer material layer 220 itself. The force adheres the contaminant located in the electrostatic seat of the photomask, and when the cleaning device 500B is separated from the electrostatic seat of the photomask, the contaminant can be simultaneously removed from the surface of the electrostatic seat of the photomask, thereby achieving a cleaning mask. The effect of the electrostatic seat. The layer of polymeric material 220 may be comprised of a polymer of elastomeric polymer or a polymer having controlled surface tack and which is not transferred to the electrostatic mount of the reticle. In some embodiments, the material of the polymer material layer 220 includes polyimide, polyvinyl alcohol (PVA), or other suitable materials. In some embodiments, the thickness of the polymeric material layer 220 is greater than or equal to a predetermined thickness. In some embodiments, the polymeric material layer 220 has a thickness of between about 5 [mu]m and 10 [mu]m, such as about 8 [mu]m.

In some embodiments, metal layer 226A, metal layers 226A and 226B, and protective layers 228A and 228B of cleaning device 500B are considered a reticle portion 230B of cleaning device 500B. The reticle portion 230B of the cleaning device 500B can function as a transmission mask.

2 is a block diagram of a semiconductor wafer processing system 600 in accordance with some embodiments showing a semiconductor wafer processing system incorporating the cleaning devices of some embodiments therein.

As shown in FIG. 2, semiconductor wafer processing system 600 in accordance with some embodiments may be a scanner that performs a lithography exposure process with individual illumination sources and exposure modes. In some embodiments, the semiconductor wafer processing system 600 is an EUV photolithography system that performs an extreme ultraviolet lithography process by exposing the photoresist layer to extreme ultraviolet light from a source. And the above photoresist layer is a material that is sensitive to extreme ultraviolet light. The semiconductor wafer processing system 600 can include a vacuum chamber 302, a radiation source 304, a reticle electrostatic mount 306, a transfer device 310, a controller 312, a wafer holder 314, a detection device 316, a vacuum pump 322, a cleaning device 500, and a reflection Photomask 700.

As shown in FIG. 2, the vacuum chamber 302 of the semiconductor wafer processing system 600 can be a closed chamber, the radiation source 304, the transfer device 310, the controller 312, the wafer holder 314, the detecting device 316, and the cleaning device 500. In the vacuum chamber 302. In some embodiments, vacuum chamber 302 utilizes vacuum pump 322 to maintain it in a vacuum environment to avoid loss of intensity of extreme ultraviolet light from the source.

As shown in FIG. 2, the reticle electrostatic mount 306 of the semiconductor wafer processing system 600 can carry the stationary cleaning device 500 or the reflective reticle 700 by electrostatic adsorption.

The detailed structure of the photomask electrostatic pad 306 of the semiconductor wafer processing system 600 will be described below using FIGS. 3A and 3B. 3A is a top plan view of the adsorption face 307 of the reticle electrostatic mount 306 of the semiconductor wafer processing system 600 in accordance with some embodiments. 3B is a cross-sectional view taken along line A-A' of FIG. 3A, showing a cross-sectional view of the photomask electrostatic mount 306 of the semiconductor wafer processing system 600 in accordance with some embodiments. In some embodiments, the reticle electrostatic mount 306 includes a plurality of electrodes 308 that are disposed in an array proximate to the absorbing surface 307 of the reticle electrostatic mount 306. When the cleaning device 500 or the reflective mask 700 is placed on the adsorption surface 307 of the reticle electrostatic seat 306, the electrode 308 can be electrically connected to an AC power source (not shown) to accumulate a positive charge (or a negative charge) and adsorbed. The cleaning device 500 or the reflective mask 700 on the face 307 induces a negatively opposite negative charge (or positive charge) in the region corresponding to the electrode 308 for between the electrode 308 and the cleaning device 500 (or the reflective mask 700). An electrostatic field is generated, and the cleaning device 500 (or the reflective mask 700) is firmly adsorbed on the adsorption surface 307 of the photomask electrostatic pad 306 by electrostatic attraction of the electrostatic field.

In some embodiments, the cleaning device 500 of the semiconductor wafer processing system 600 is used to clean the reticle electrostatic mount 306. Additionally, the cleaning device 500 of the semiconductor wafer processing system 600 can be used to perform a lithography process. The cleaning device 500 can include a layer of polymeric material 220 and a reticle portion 230, and the configuration, function, and material of the cleaning device 500 can be the same or similar to the cleaning device 500A or 500B shown in Figures 1A, 1B. In some embodiments, the number of cleaning devices 500 disposed in the semiconductor wafer processing system 600 is not limited. For example, the semiconductor wafer processing system 600 includes the cleaning device 500A shown in FIG. 1A and the cleaning device 500B shown in FIG. 1B.

In some embodiments, the reflective mask 700 of the semiconductor wafer processing system 600 is used to perform a lithography process on the semiconductor wafer.

The detailed construction of the reflective reticle 700 of the semiconductor wafer processing system 600 will now be described using FIG. 4 is a schematic illustration of a reflective mask 700 of a semiconductor wafer processing system 600 in accordance with some embodiments. In some embodiments as shown in FIG. 4, the reflective mask 700 includes a substrate 200C, a reflective structure 206 disposed over the front side surface 201 of the substrate 200C, a protective layer 210 and an absorbing layer 216, and a rear side disposed on the substrate 200C. Conductive layer 218 over surface 203. In some embodiments, the structure, function, and material of the substrate 200C, the reflective structure 206, the protective layer 210, the absorbing layer 216, and the conductive layer 218 of the reflective mask 700 are the same or similar to those of the cleaning device 500A shown in FIG. 1A. The substrate 200A, the reflective structure 206, the protective layer 210, the absorbing layer 216, and the conductive layer 218 are therefore not repeated herein.

As shown in FIG. 2, the wafer holder 314 of the semiconductor wafer processing system 600 can be used to carry the semiconductor wafer 320, and the wafer holder 314 can adsorb the semiconductor wafer 320 by electrostatic adsorption. In some embodiments, the wafer holder 314 is disposed opposite the reticle electrostatic mount 306. In some embodiments, the semiconductor wafer 320 includes, for example, a germanium wafer or other semiconductor wafer to be patterned, and the surface thereof is coated with a photoresist layer (not shown) that is sensitive to extreme ultraviolet light. In some embodiments, the semiconductor wafer 320 includes a dummy wafer and does not have the photoresist layer described above on its surface.

As shown in FIG. 2, the radiation source 304 of the semiconductor wafer processing system 600 is used to generate extreme ultraviolet light having a wavelength range between about 1 nm and 100 nm. When the cleaning device 500 or the reflective mask 700 is adsorbed on the reticle electrostatic seat 306, the extreme ultraviolet light (not shown) generated by the radiation source 304 can be directed to the cleaning by an illuminator (not shown). Device 500 or reflective mask 700. The cleaning device 500 or the reflective mask 700 partially absorbs and partially reflects the extreme ultraviolet light, and the extreme ultraviolet light reflected by the cleaning device 500 or the reflective mask 700 carries the pattern of the cleaning device 500 or the reflective mask 700. The pattern of the cleaning device 500 or the reflective mask 700 can be imaged to the semiconductor wafer 320 adsorbed on the wafer holder 314 by a projection optics module to expose the semiconductor wafer 320. In some embodiments, the source 304 produces an extreme ultraviolet light having a wavelength centered at about 13.5 nm. Thus, source 304 can also be referred to as an extreme ultraviolet source. In some embodiments, an extreme ultraviolet light source utilizes a dual pulsed laser to generate a plasma mechanism to generate extreme ultraviolet light.

As shown in FIG. 2, the transfer device 310 of the semiconductor wafer processing system 600 can be used to selectively place the cleaning device 500 on the reticle electrostatic mount 306, separate the cleaning device 500 from the reticle electrostatic mount 306, and reflect the reticle. The 700 is placed on the mask electrostatic mount 306, the reflective mask 700 is separated from the mask electrostatic mount 306, the semiconductor wafer 320 is placed on the wafer holder 314, or the semiconductor wafer 320 is separated from the wafer holder 314. In some embodiments, the delivery device 310 includes a robotic arm.

As shown in FIG. 2, the controller 312 of the semiconductor wafer processing system 600 can be configured to control at least the reticle electrostatic mount 306, the wafer holder 314, the transfer device 310, and the detection device 316. In some embodiments, the controller 312 is used to control the electrostatic adsorption force between the cleaning device 500 and the reticle electrostatic mount 306. In some embodiments, the controller 312 can be used to control when the cleaning device 500 is attracted to the reticle electrostatic mount 306.

As shown in FIG. 2, the detection device 316 of the semiconductor wafer processing system 600 can be used to detect whether the surface of the reticle electrostatic mount 306 needs to be cleaned (eg, to detect whether the surface of the reticle electrostatic mount 306 has contaminants or the surface of the reticle electrostatic mount 306). Is it not flat?) In some embodiments, the detecting device 205 is an optical detecting device that determines whether the surface of the reticle electrostatic seat 306 needs to be cleaned by transmitting light to the reticle electrostatic seat 306 and receiving the reflected light generated by the reticle electrostatic seat 306 (eg, through The angle of the reflected light or the intensity of the light).

FIG. 5 is a flow diagram of a cleaning method 550 of a semiconductor wafer processing system of some embodiments. In some embodiments, the semiconductor wafer processing system cleaning method 550 can be applied to the semiconductor wafer processing system 600 of FIG. 2, 7A, 7B, and 7C are block diagrams showing the semiconductor wafer processing system 600 in a different operation of the cleaning method 550 of the semiconductor wafer processing system corresponding to some of the embodiments shown in FIG. Moreover, FIGS. 8A, 8B, and 8C are schematic views of different stages of operation of the cleaning method 500 of the semiconductor wafer processing system and the mask electrostatic mount 306 in the semiconductor wafer processing system cleaning method 550, in accordance with some embodiments. The subsequent description utilizes FIG. 5 in conjunction with FIGS. 2, 7A-7C, and 8A, 8B, and 8C to illustrate a cleaning method 550 of a semiconductor wafer processing system in accordance with some embodiments. Additional operations may be provided in front of, in the middle or after the flow of the cleaning method 550 of the semiconductor wafer processing system, and some of the operations described may be replaced, eliminated or moved as an additional embodiment of the method.

Referring to FIGS. 2, 5, 7A, and 8A, the cleaning method 550 of the semiconductor wafer processing system of some embodiments may include an operation 502 of placing a cleaning device 500 in a semiconductor wafer processing system in a vacuum chamber. A reticle electrostatic seat 306 of 600. The cleaning device 500 can be placed over the reticle electrostatic mount 306 using the transfer device 310. As shown in FIG. 3B, in some embodiments, the surface of the electrode 308 adjacent to the adsorption surface 307 of the reticle electrostatic mount 306 is adsorbed and accumulated by the lithography process by repeating the photomask, as shown in FIG. 8A. Shown. The accumulated contaminants 309 may cause damage to the reticle electrostatic mount 306 or render the reticle unflattenable to the reticle electrostatic mount 306. Accordingly, the cleaning device 500 can be used to carry the above-described contaminants away from the surface of the photomask mount 306 (adsorption surface 307), thereby achieving the effect 306 of cleaning the photomask electrostatic mount. In some embodiments, the cleaning device 500 includes a layer of polymeric material 220 and a reticle portion 230. The configuration, function, and material of the cleaning device 500 may be the same or similar to the cleaning devices 500A, 500B shown in Figures 1A, 1B. The structure, function and material of the polymer material layer 220 may be the same or similar to the polymer material layer 220 shown in FIGS. 1A and 1B, and the configuration, function and material of the reticle portion 230 may be the same or similar to the 1A, 1B. The mask portions 230A, 230B are shown.

Referring to FIGS. 5, 7A, and 8B simultaneously, the semiconductor wafer processing system cleaning method 550 can include an operation 504 of adsorbing the polymer material layer 220 of the cleaning device 500 through the mask electrostatic mount 306 to the mask electrostatic mount 306. And the polymeric material layer 220 of the cleaning device 500 contacts the adsorption surface 307 of the reticle electrostatic mount 306. In some embodiments, the reticle electrostatic mount 306 can electrostatically adsorb the cleaning device 500 thereto. As shown in FIG. 3C, during operation 504, the adsorption surface 307 of the reticle electrostatic mount 306 can be completely covered by the polymeric material layer 220, which can be between the cleaning device 500 and the reticle electrostatic mount 306. The electrostatic adsorption force is compressed to contact the contaminant 309 of the photomask electrostatic seat 306, so that the contaminant 309 adheres (or adheres) to the polymer material layer 220 of the cleaning device 500.

In some embodiments, the controller 312 is configured to control the electrostatic adsorption force between the cleaning device 500 and the reticle electrostatic mount 306, thereby increasing the extent to which the polymer material layer 220 is squeezed to the electrodes of the reticle electrostatic mount 306. The contaminants 309 on the 308 are more likely to be adhered or embedded in the layer of polymeric material 220 of the cleaning device 500.

Referring to FIG. 7A, in some embodiments, after the cleaning device 500 is attracted to the reticle electrostatic mount 306, the semiconductor wafer 320 is placed and adsorbed onto the wafer holder 314. Next, a lithography process (eg, an extreme ultra-violet (EUV) lithography process) is performed using the radiation source 304. In some embodiments, the source 304 includes an extreme ultraviolet (EUV) light source that is used to generate the extreme ultraviolet light L to expose the semiconductor wafer 320 during the lithography process. Moreover, during the lithography process, the extreme ultraviolet light L generated by the radiation source 304 can be directed to the reticle portion 230 of the cleaning device 500 by a reflector (not shown), and the reticle portion 230 of the cleaning device 500 The extreme ultraviolet light L is reflected to the semiconductor wafer 320, and the pattern of the mask portion 230 of the cleaning device 500 can be imaged onto the wafer holder 314 by a projection optical module (not shown). The semiconductor wafer 320 is exposed to the semiconductor wafer 320. After the above lithography process, the source 304 stops generating the extreme ultraviolet light L.

In the present embodiment, the configuration, function and material of the cleaning device 500 may be the same or similar to the cleaning device 500A shown in FIG. 1A. The configuration, function and material of the polymer material layer 220 of the cleaning device 500 may be the same or similar to the polymer material layer 220 shown in FIG. 1A, and the configuration, function and material of the reticle portion 230 of the cleaning device 500 may be the same or Similar to the mask portion 230A shown in FIG. 1A.

In this embodiment, the semiconductor wafer 320 can be a working wafer, and its surface is coated with a photoresist layer (not shown) that is sensitive to extreme ultraviolet light. Alternatively, the semiconductor wafer 320 may include a dummy wafer and has no photoresist layer on its surface.

As shown in FIG. 7A, after the cleaning device 500 is adsorbed to the photomask electrostatic mount 306, the semiconductor wafer processing system 600 can perform a lithography process on the semiconductor wafer 320 by using the cleaning device 500, and simultaneously clean during the lithography process. The mask electrostatic mount 306 thereby reduces the overall time required to perform the lithography process and clean the reticle electrostatic mount 306.

Please refer to FIGS. 5, 7B, and 8C at the same time. Next, the cleaning method 550 of the semiconductor wafer processing system may include an operation 506. When the cleaning device 500 is attracted to the reticle electrostatic mount 306 and the time T _N elapses, the cleaning device 500 is The mask electrostatic mount 306 is separated. As shown in FIG. 8C, when the cleaning device 500 is separated from the photomask electrostatic mount 306, the contaminants 309 on the electrodes 308 of the photomask electrostatic mount 306 are attached (or adhered) to the polymeric material layer 220 of the cleaning device 500. In some embodiments, the preset value of the indicator N is 0, that is, the preset value of the time T _N is the time T ₀ . For example, time T ₀ is approximately 30 minutes. However, it is also possible to adjust the preset value of the time T _{N to} the time T ₀ according to conditions such as the time and/or the number of times the lithography process is performed.

In some embodiments, the time _TN at which the cleaning device 500 is attracted by the photomask electrostatic mount 306 can be greater than a predetermined time (eg, about 30 minutes), thereby increasing the extent to which the layer of polymeric material 101 is squeezed, causing the contamination. The material is more easily adhered or embedded in the layer of polymeric material 220. However, the time T _N may also be adjusted according to conditions such as the time and/or the number of times the lithography process is performed. In some embodiments, the controller 312 can be used to control the time (ie, time _TN ) at which the cleaning device 500 is attracted by the reticle electrostatic mount 306.

In an embodiment in which the semiconductor wafer processing system 600 performs a lithography process on the semiconductor wafer 320 by the cleaning device 500 adsorbed to the photomask electrostatic pad 306, the process time design of the lithography process is less than or equal to the time T _N . And, after operation 506 is performed, the semiconductor wafer 320 is separated from the wafer holder 314 as shown in FIG. 7B.

In some embodiments, the cleaning method 550 of the semiconductor wafer processing system is completed at least via operation 502, operation 504, and operation 506.

In some embodiments, the contaminants 309 on the electrodes 308 of the cleaned photomask electrostatic mount 306 may still accumulate over time. The accumulated contaminants 309 may cause damage to the reticle electrostatic mount 306 or render the reticle unflattenable to the reticle electrostatic mount 306.

In some embodiments, after operation 506 is completed, the semiconductor wafer processing system cleaning method 550 further includes an operation 508 of detecting and determining whether the surface of the photomask electrostatic mount 306 requires cleaning. If the detecting means 316 determines that the surface of the reticle electrostatic seat 306 needs to be cleaned ("Y" as shown in Fig. 5), the controller 312 changes the time _TN in operation 506 to time _TN+1 (i.e., the index) The value of N is incremented by 1) and operation 502, operation 504, and operation 506 are performed again. Then, in operation 506, and 306 (i.e., the numerical index N plus 1), the cleaning device 500 when the cleaning device 500 is separated from the reticle electrostatic adsorption seat ₁ and the elapsed time T electrostatic reticle base 306, and so on .

In some embodiments, the greater the value of the time index N T _N, T _N longer representative of the. In this case, after performing operation 502, operation 504, and operation 506, the cleaning method 550 determines that the surface of the photomask electrostatic seat 306 needs to be cleaned (and still has contaminants) after performing operation 508 (as shown in FIG. 5). "yES"), the cleaning method 550 will again operation 502, operation 504 and operation 506, and a longer period of time (for example, greater than time T ₀ T ₁ of time in operation 506), the cleaning device 500 is adsorbed on The mask electrostatic mount 306, thereby increasing the extent to which the polymeric material layer 220 of the cleaning device 500 is squeezed, allowing contaminants to be more easily adhered or embedded in the polymeric material layer 220 of the cleaning device 500, thereby further eliminating Contaminants 309 removed from the reticle electrostatic mount 306. In some embodiments, time T ₀ is a first time (length) and time T ₁ is a second time (length).

On the other hand, if the operation 508 of the cleaning method 550 of the semiconductor wafer processing system is performed, it is judged that the surface of the photomask electrostatic pad 306 does not need to be cleaned ("NO" as shown in FIG. 5), then the cleaning method 550 is performed. Operation 510, using controller 312 to restore time T _N in operation 506 to a preset value (eg, time T ₀ ). In operation 510, when the cleaning device 500 is separated from the reticle electrostatic mount 306 and the interval time T elapses, operation 502, operation 504, and operation 506 are performed again. For example, if the surface of the photomask electrostatic seat 306 does not need to be cleaned, when the cleaning device 500 is separated from the photomask electrostatic seat 306 and the interval time T is passed, the cleaning device 500 is placed over the photomask electrostatic seat 306. The mask electrostatic mount 306 adsorbs the polymer material layer 220 of the cleaning device 500 to the photomask electrostatic mount 306, and when the cleaning device 500 is attracted to the photomask electrostatic mount 306 and passes the time T ₀ , the cleaning device 500 and the photomask are electrostatically charged. Block 306 is separated.

In some embodiments, using the controller 312 to determine the interval time T, the effect of avoiding excessively frequent cleaning of the reticle mount can be achieved, or the time interval to avoid operation of the cleaning method 550 of the semiconductor wafer processing system can be too long. The effect of accumulating excessive contaminants on the reticle mount. In some embodiments, the interval time T can be greater than the time T _{N at} which the cleaning device 500 is adsorbed by the mask electrostatic mount 306 in operation 506. For example, the interval time T can range between about 20 hours and 30 hours, such as about 24 hours. However, the interval time T may be adjusted according to conditions such as the time and/or the number of times the lithography process is performed.

The cleaning method 550 of a semiconductor wafer processing system in accordance with some embodiments has the following advantages. When cleaning the reticle electrostatic mount 306 of the semiconductor wafer processing system 600, there is no need to off-line the semiconductor wafer processing system 600, damaging the vacuum environment of the vacuum chamber 302 for cleaning. Therefore, it is not necessary to consume the working time for restoring the vacuum environment, so that the time for cleaning the photomask electrostatic pad 306 can be shortened, and on the other hand, the vacuum of the vacuum chamber 302 is not broken when the cleaning method 550 of the semiconductor wafer processing system is performed. The environment, which in turn improves the efficiency of the overall semiconductor process.

6A, 6B are flow diagrams of a semiconductor wafer processing method 650 of some embodiments. In some embodiments, semiconductor wafer processing method 650 can be applied to semiconductor wafer processing system 600 of FIG. The 2, 7A, 7B, 7C, 7D, 7E diagrams can also be used to display the blocks of the semiconductor wafer processing system 600 in the different operations of the semiconductor wafer processing method 650 corresponding to some of the embodiments shown in FIGS. 6A, 6B. schematic diagram. Moreover, FIGS. 8A, 8B, and 8C are schematic diagrams that may also be used to display the cleaning apparatus 500 and the photomask static mount 306 of the semiconductor wafer processing system 600 in accordance with some embodiments at different stages of operation of the semiconductor wafer processing method 650. Subsequent descriptions of the semiconductor wafer processing method 650 in accordance with some embodiments are illustrated by using FIGS. 6A and 6B in conjunction with FIGS. 2, 7A-7E, and 8A, 8B, and 8C. Additional operations may be provided in front of, in the middle, or behind the flow of semiconductor wafer processing method 650, and some of the operations described may be replaced, eliminated, or moved as an additional embodiment of the method.

Referring to FIGS. 2, 6A, 6B, 7A, and 8A, the semiconductor wafer processing method 650 of some embodiments may include an operation 602 of placing a cleaning device 500 in a semiconductor wafer processing system 600 in a vacuum chamber. A photomask is placed on the electrostatic mount 306. In some embodiments, operation 602 of semiconductor wafer processing method 650 is performed in the same manner or similar to operation 502 of the cleaning method of the semiconductor wafer processing system illustrated in FIG. 5, and thus will not be repeated herein. In the present embodiment, the configuration, function and material of the cleaning device 500 may be the same or similar to the cleaning device 500A shown in Fig. 1A. The configuration, function and material of the polymer material layer 220 of the cleaning device 500 may be the same or similar to the polymer material layer 220 shown in FIG. 1A, and the configuration, function and material of the reticle portion 230 of the cleaning device 500 may be the same or Similar to the mask portion 230A shown in FIG. 1A.

Referring to FIGS. 6A, 6B, 7A, and 8B, the semiconductor wafer processing method 650 may include an operation 604 of adsorbing the polymer material layer 220 of the cleaning device 500 to the photomask electrostatic pad 306 through the photomask electrostatic pad 306. The polymeric material layer 220 of the cleaning device 500 is brought into contact with the adsorption surface 307 of the reticle electrostatic mount 306. In some embodiments, operation 604 of semiconductor wafer processing method 650 is performed in the same manner or similar to operation 504 of the cleaning method of the semiconductor wafer processing system illustrated in FIG. 5, and thus will not be repeated herein.

Referring to FIGS. 6A, 6B, and 7A simultaneously, the semiconductor wafer processing method 650 can include an operation 606 of placing and adsorbing the semiconductor wafer 320 on the wafer holder 314. The wafer holder 314 can adsorb the semiconductor wafer 320 by electrostatic adsorption. In some embodiments, the semiconductor wafer 320 can be a working wafer and its surface is coated with a photoresist layer (not shown) that is sensitive to extreme ultraviolet light. Alternatively, the semiconductor wafer 320 may include a dummy wafer and has no photoresist layer on its surface.

Please refer to FIGS. 6A, 6B, and 7A at the same time. Next, the semiconductor wafer processing method 650 can include an operation 608 of performing a first semiconductor process on the semiconductor wafer 320. In some embodiments, the first semiconductor process is a lithography process (eg, an EUV lithography process), and the first semiconductor process can be performed using the ray source 304. In some embodiments, the source 304 includes an extreme ultraviolet (EUV) source that is used to generate the extreme ultraviolet light L to expose the semiconductor wafer 320 during the first semiconductor process (lithography process). Moreover, during the first semiconductor process, the extreme ultraviolet light L generated by the radiation source 304 can be directed to the reticle portion 230 of the cleaning device 500 by a reflector (not shown), and the reticle portion 230 of the cleaning device 500 The extreme ultraviolet light L is reflected to the semiconductor wafer 320, and the pattern of the mask portion 230 of the cleaning device 500 can be imaged onto the wafer holder 314 by a projection optical module (not shown). The semiconductor wafer 320 is exposed to the semiconductor wafer 320. After the first semiconductor process described above, the source 304 stops generating the extreme ultraviolet light L.

As shown in FIGS. 7A and 8B, during operation 608, the semiconductor wafer processing system 600 can perform a semiconductor process (lithography process) on the semiconductor wafer 320 using the cleaning device 500, and simultaneously clean the mask during the lithography process. The electrostatic mount 306 thereby reduces the overall time required to perform the semiconductor process and clean the photomask electrostatic mount 306.

Referring to FIGS. 6A, 6B, 7B, and 8C, the semiconductor wafer processing method 650 may further include an operation 610 of separating the cleaning device 500 from the photomask electrostatic pad 306 and performing the semiconductor wafer 320 after performing the semiconductor process. Separated from wafer holder 314. As shown in FIG. 8C, when the cleaning device 500 is separated from the photomask electrostatic mount 306, the contaminants 309 on the electrodes 308 of the photomask electrostatic mount 306 are attached (or adhered) to the polymeric material layer 220 of the cleaning device 500.

In some embodiments, semiconductor wafer processing method 650 is accomplished at least via operations 602, 604, 606, 608, and 610.

In some embodiments, contaminants 309 on the electrodes 308 of the reticle electrostatic mount 306 that have been cleaned during the lithography process may still accumulate over time. The accumulated contaminants 309 may cause damage to the reticle electrostatic mount 306 or prevent the reticle from being placed flat on the reticle electrostatic mount 306.

Referring to FIGS. 6A, 6B, and 7C, the semiconductor wafer processing method 650 further includes an operation 612 of detecting and determining whether the surface of the photomask electrostatic pad 306 needs cleaning. If the detecting means 316 judges that the surface of the photomask electrostatic pad 306 needs to be cleaned ("Ye" as shown in Figs. 6A, 6B), operations 614, 616, 618 are sequentially performed. In operation 614, the cleaning device 500 is placed in the reticle electrostatic mount 306. In operation 616, the polymeric material layer 220 of the cleaning device 500 is adsorbed to the reticle electrostatic mount 306 through the reticle electrostatic mount 306. In operation 616, when the cleaning device 500 is attracted to the reticle electrostatic mount 306 and the time _TN elapses, the cleaning device 500 is separated from the reticle electrostatic mount 306.

In some embodiments, operations 614, 616, 618 of semiconductor wafer processing method 650 are performed the same or similar to operations 502, 504, 508 of the semiconductor wafer processing system cleaning method illustrated in FIG. 5, respectively. The description will not be repeated here.

In some embodiments, after operation 508 is completed, operation 612 of semiconductor wafer processing method 650 is performed again, with detection device 316 detecting and determining whether the surface of reticle electrostatic mount 306 requires cleaning. If the detecting means 316 determines that the surface of the reticle electrostatic seat 306 needs to be cleaned ("Ye" as shown in Figs. 6A, 6B), the controller 312 changes the time T _N in operation 506 to time T _N+1 (also That is, the value of the index N is incremented by 1) and operations 614, 616, 618 are performed again. And, at operation 618, when the cleaning apparatus 500 and the reticle electrostatic adsorption seat 306 the elapsed time T ₁ (i.e., the numerical index N plus 1), the cleaning means 500 is separated from the electrostatic reticle base 306, and so on . In some embodiments, time T ₀ is a first time (length), and time T ₁ is a second time (length), and the length of time T ₁ is greater than time T ₀ . The semiconductor wafer processing method 650 can increase the extent to which the polymer material layer 220 of the cleaning device 500 is squeezed by performing operations 614, 616, 618 again and extending the time that the cleaning device 500 is attracted to the reticle electrostatic mount 306. The material is more easily adhered or embedded in the layer of polymeric material 220 of the cleaning device 500, thereby further removing contaminants 309 that have not been removed from the photomask electrostatic mount 306.

Referring to FIGS. 6A, 6B, 7D, and 7E, if the operation 612 of the semiconductor wafer processing method 650 is performed, it is determined that the surface of the photomask electrostatic pad 306 does not need to be cleaned (as shown in FIGS. 6A and 6B). Then, the operation 620 of the semiconductor wafer processing method 650 is performed, a reflective mask 700 is adsorbed to the photomask electrostatic mount 306, and after the reflective mask 700 is adsorbed to the photomask electrostatic mount 306, another semiconductor wafer 230 is placed. After the second semiconductor process is performed on the other semiconductor wafer 230 and after the second semiconductor process is performed, the reflective mask 700 is separated from the photomask electrostatic pad 306, and another semiconductor wafer is separated. 230 is separated from wafer holder 314.

In some embodiments, the second semiconductor process is a lithography process (eg, an EUV lithography process), and the second semiconductor process can be performed using the radiation source 304. In some embodiments, the source 304 includes an extreme ultraviolet (EUV) source that is used to generate extreme ultraviolet light L to expose another semiconductor wafer 320 during a second semiconductor process (lithography process). . Moreover, during the second semiconductor process (lithography process), the extreme ultraviolet light L generated by the radiation source 304 can be directed to the reflective mask 700 by a reflector (not shown), and the reflective mask 700 will be extremely The ultraviolet light L is reflected to the semiconductor wafer 320, and a projection optical module (not shown) can be used to image the pattern of the reflective mask 700 to the semiconductor wafer 320 adsorbed on the wafer holder 314. The semiconductor wafer 320 is exposed. After the above lithography process, the source 304 stops generating the extreme ultraviolet light L. In some embodiments, the configuration, function, and material of the reflective mask 700 are the same or similar to the reflective mask 700 as shown in FIG. 2, and thus will not be repeated here.

Referring to FIGS. 6A, 6B, and 7E, the reflective mask 700 is separated from the mask electrostatic mount 306, and after the other semiconductor wafer 230 is separated from the wafer holder 314, operation 622 is performed, and operation 618 is performed by controller 312. The time T _{N in the} recovery is restored to a preset value (the preset value of the indicator N is 0, that is, the preset value of the time T _N is the time T ₀ ). In operation 510, when the reflective mask 700 and the other semiconductor wafer 230 are separated from the photomask electrostatic mount 306, respectively, and the interval time T elapses, operations 602, 604, 606, 608, 610, and 612 are performed again. If the detecting device 316 determines that the surface of the photomask electrostatic pad 306 needs to be cleaned (as shown in FIGS. 6A, 6B) after performing operation 612, operations 614, 616, 618 are performed sequentially, and at operation 616. In the meantime, when the cleaning device 500 is attracted to the reticle electrostatic mount 306 and the time T _N (for example, time T ₀ ) elapses, the cleaning device 500 is separated from the reticle electrostatic mount 306.

In some embodiments, after operation 622 of semiconductor wafer processing method 650 is performed and operation 602 is performed again, operation 612 of semiconductor wafer processing method 650 can be performed again, with detection device 316 detecting and determining the mask electrostatic mount. 306 Whether the surface needs cleaning. If the detecting means 316 determines that the surface of the reticle electrostatic seat 306 needs to be cleaned ("Ye" as shown in Figs. 6A, 6B), the controller 312 changes the time T _N in operation 506 to time T _N+1 (also That is, the value of the index N is incremented by 1) and operations 614, 616, 618 are performed again. If the operation 612 of the semiconductor wafer processing method 650 is performed, it is determined that the surface of the photomask electrostatic pad 306 does not need to be cleaned ("NO" as shown in FIGS. 6A, 6B), then operation 602 is performed.

The semiconductor wafer processing method 650 in accordance with some embodiments has the following advantages. The semiconductor wafer processing system 600 can utilize a cleaning device 500 including a layer of polymer material 220 and a reticle portion 230. When the reticle electrostatic holder 306 is attracted to the cleaning device 500, the reticle mount is adhered by the polymer material layer 220 of the cleaning device 500. The contaminants 309 on the electrodes 308 of 306, and simultaneously lithographically processing the semiconductor wafer using the mask portion 230 of the cleaning device 500. The semiconductor wafer processing method 650 described above eliminates the need to off-line the semiconductor wafer processing system 600 and destroy the vacuum environment of the vacuum chamber 302 to clean the light when cleaning the mask electrostatic mount 306 of the semiconductor wafer processing system 600. The electrostatic seat 306 is covered, so that it is not necessary to recover the working time of the vacuum environment, and the efficiency of the semiconductor process can be greatly improved.

Embodiments of the present disclosure provide a method 550 of cleaning a semiconductor wafer processing system, a semiconductor wafer processing method 650, and a semiconductor wafer processing system 600. In some embodiments, the cleaning method 550 of the semiconductor wafer processing system described above includes placing a cleaning device 500 (including the cleaning devices 500A, 500B shown in FIGS. 1A, 1B) in a vacuum chamber 302. The cover is over the electrostatic seat 306. The cleaning method 550 of the semiconductor wafer processing system includes adsorbing a polymer material layer 220 of the cleaning device 500 to the mask electrostatic mount 306 through the mask electrostatic mount 306. The cleaning method 550 of the semiconductor wafer processing system includes separating the cleaning device 500 from the mask electrostatic mount 306 when the cleaning device 500 is attracted to the mask electrostatic mount 306 and passes a first time _TN . The above described semiconductor wafer processing system cleaning method 550 can be applied to a semiconductor wafer processing system 600 (Fig. 2), such as an extreme ultraviolet (EUV) lithography system. In some embodiments, the cleaning device 500 integrated with an extreme ultraviolet (EUV) reticle (mask portion 230) can be adsorbed onto the reticle electrostatic mount 306 of the semiconductor wafer processing system 600, the polymerization of the cleaning device 500. The material layer 220 can adhere to contaminants 309 (eg, mask base particles such as CrN, TaB, etc.) located on the electrodes 308 of the reticle electrostatic mount 306. Therefore, when the cleaning device 500 is separated from the photomask electrostatic pad 306, the contaminant 309 can be simultaneously removed from the adsorption surface 307 of the photomask electrostatic pad 306, thereby achieving the effect of cleaning the photomask electrostatic pad 306. The cleaning method 550 of the semiconductor wafer processing system described above eliminates the need to off-line the semiconductor wafer processing system 600 and destroy the vacuum environment of the vacuum chamber 302 when cleaning the mask electrostatic mount 306 of the semiconductor wafer processing system 600. In order to clean the reticle electrostatic seat 306, the time for cleaning the reticle electrostatic seat 306 can be greatly saved, and the efficiency of the semiconductor process can be greatly improved.

Embodiments of the present disclosure provide a method of cleaning a semiconductor wafer processing system, a semiconductor wafer processing method, and a semiconductor wafer processing system. The cleaning method of the above semiconductor wafer processing system includes placing a cleaning device over a photomask electrostatic mount in a vacuum chamber. A polymer material layer of one of the cleaning devices is adsorbed to the photomask electrostatic pad through the photomask electrostatic pad. The cleaning device is separated from the photomask electrostatic seat when the cleaning device is adsorbed to the photomask electrostatic seat for a first time. The cleaning method of the above semiconductor wafer processing system can be applied to an extreme ultraviolet lithography system. The cleaning method of the above semiconductor wafer processing system uses a cleaning device integrated with an extreme ultraviolet ray mask to adsorb the cleaning device by using a reticle electrostatic seat in a vacuum environment that maintains the lithography process. The cleaning method of the above semiconductor wafer processing system can use the polymer material layer of the cleaning device to adhere the contaminants on the reticle electrostatic seat electrode, and at the same time, lithographically process the semiconductor wafer by using the reticle portion of the cleaning device. It can greatly save the time of cleaning the reticle electrostatic seat, and can greatly improve the efficiency of the semiconductor process.

In accordance with some embodiments, a method of cleaning a semiconductor wafer processing system is provided. The cleaning method of the above semiconductor wafer processing system includes placing a cleaning device over a photomask electrostatic mount in a vacuum chamber. The method of cleaning a semiconductor wafer processing system further includes adsorbing a polymer material layer of the cleaning device to the photomask electrostatic pad through the photomask electrostatic pad. The cleaning method of the semiconductor wafer processing system further includes separating the cleaning device from the photomask electrostatic pad when the cleaning device is adsorbed to the photomask electrostatic pad and passes a first time.

In some embodiments, the cleaning method of the semiconductor wafer processing system includes placing a semiconductor wafer over a wafer holder after the cleaning device is adsorbed to the photomask electrostatic mount. The method for cleaning a semiconductor wafer processing system further includes performing a lithography process using a ray source for generating extreme ultraviolet light during exposure of the lithography process to expose the semiconductor wafer.

In some embodiments, the cleaning method of the semiconductor wafer processing system includes determining whether the surface of the reticle electrostatic seat needs to be cleaned after separating the cleaning device from the reticle electrostatic mount. The cleaning method of the semiconductor wafer processing system further includes: if the surface of the photomask electrostatic seat needs to be cleaned, placing the cleaning device above the photomask electrostatic seat, and passing the polymer of the cleaning device through the photomask electrostatic seat The material layer is adsorbed to the photomask electrostatic mount, and the cleaning device is separated from the photomask electrostatic mount when the cleaning device is adsorbed to the photomask electrostatic mount for a second time. The cleaning method of the semiconductor wafer processing system further includes the second time being greater than the first time.

In some embodiments, the cleaning method of the semiconductor wafer processing system includes: if the reticle electrostatic seat surface does not need to be cleaned, the cleaning is performed when the cleaning device is separated from the reticle electrostatic seat and passes an interval time. The device is placed above the photomask electrostatic seat, and the polymer material layer of the cleaning device is adsorbed to the photomask electrostatic seat through the photomask electrostatic seat, and the cleaning device is adsorbed to the photomask electrostatic seat and passes through the above For a time, the cleaning device is separated from the photomask electrostatic seat.

In accordance with some embodiments, a semiconductor wafer processing method is provided. The semiconductor wafer processing method includes placing a cleaning device over a photomask electrostatic mount in a vacuum chamber. The semiconductor wafer processing method further includes adsorbing a polymer material layer of one of the cleaning devices to the photomask electrostatic pad through the photomask electrostatic pad. The semiconductor wafer processing method further includes placing a semiconductor wafer over a wafer holder after the cleaning device is adsorbed to the photomask electrostatic pad. The semiconductor wafer processing method further includes performing a first semiconductor process on the semiconductor wafer. The semiconductor wafer processing method further includes separating the cleaning device from the photomask electrostatic pad and separating the semiconductor wafer from the wafer holder after performing the first semiconductor process.

In some embodiments, the semiconductor wafer processing method includes determining whether the surface of the photomask electrostatic pad needs to be cleaned after separating the cleaning device from the photomask electrostatic pad. The semiconductor wafer processing method further includes: if the surface of the photomask electrostatic seat needs to be cleaned, placing the cleaning device above the photomask electrostatic seat, and adsorbing the polymer material layer of the cleaning device through the photomask electrostatic seat And the cleaning device is separated from the photomask electrostatic seat when the cleaning device is adsorbed to the photomask electrostatic seat and a first time passes. The semiconductor wafer processing method further includes: if the surface of the photomask electrostatic seat does not need to be cleaned, adsorbing a reflective mask to the photomask electrostatic seat, and when the reflective mask is adsorbed to the photomask electrostatic seat, And placing another semiconductor wafer on the wafer holder, performing a second semiconductor process on the another semiconductor wafer, and performing the second semiconductor process, separating the reflective mask from the photomask electrostatic mount, and The other semiconductor wafer is separated from the wafer holder.

In some embodiments, the semiconductor wafer processing method includes determining whether the surface of the photomask electrostatic pad needs to be cleaned after separating the cleaning device from the photomask electrostatic pad. The semiconductor wafer processing method further includes: if the surface of the photomask electrostatic seat needs to be cleaned, placing the cleaning device above the photomask electrostatic seat, and adsorbing the polymer material layer of the cleaning device through the photomask electrostatic seat And the cleaning device is separated from the photomask electrostatic seat when the cleaning device is adsorbed to the photomask electrostatic seat for a second time. The semiconductor wafer processing method further includes the second time being greater than the first time.

In accordance with some embodiments, a semiconductor wafer processing system is provided. The semiconductor wafer processing system includes a vacuum chamber, a first cleaning device, a photomask electrostatic mount, a transfer device, and a controller. The first cleaning device is disposed in the vacuum chamber. The first cleaning device includes a first substrate, a reflective structure, a protective layer, an absorbing layer, a conductive layer and a first polymer material layer. The material of the first substrate comprises a low thermal expansion material. The reflective structure is disposed above a front side surface of the substrate. The protective layer is disposed above the reflective structure. The absorbing layer is disposed above the protective layer. The conductive layer is disposed above a rear side surface of the substrate. The first polymer material layer is disposed above the conductive layer. The photomask electrostatic mount is disposed in the vacuum chamber. The transfer device is disposed in the vacuum chamber to selectively place the first cleaning device above the photomask electrostatic seat. The controller is disposed in the vacuum chamber to control the reticle electrostatic mount and the transfer device. The photomask electrostatic seat is electrostatically attracted to the first cleaning device.

In some embodiments, the semiconductor wafer processing system includes an extreme ultraviolet light source disposed in the vacuum chamber for performing a lithography process, wherein the radiation source is used to generate extreme ultraviolet light during the lithography process. To expose a semiconductor wafer.

In some embodiments, the semiconductor wafer processing system includes a second cleaning device disposed within the vacuum chamber. The second cleaning device includes a second substrate, a first metal layer, a second metal layer, a first metal layer, a second metal layer and a second polymer material layer. The material of the second substrate includes ruthenium. The first metal layer and the second metal layer are respectively disposed above a front side surface and a rear side surface of the second substrate. The first metal layer and the second metal layer are respectively disposed above the first metal layer and above the second metal layer. The second polymer material layer is disposed above the rear side surface of the substrate and above the second protective layer. The photomask electrostatic seat is electrostatically attracted to the second cleaning device.

The foregoing summary of the invention is inferred by the claims It will be understood by those of ordinary skill in the art, and other processes and structures may be readily designed or modified on the basis of the present disclosure, and thus achieve the same objectives and/or achieve the same embodiments as those described herein. The advantages. Those of ordinary skill in the art should also understand that such equivalent structures do not depart from the spirit and scope of the invention. Various changes, permutations, or alterations may be made in the present disclosure without departing from the spirit and scope of the invention.

Claims (10)

 A cleaning method for a semiconductor wafer processing system, comprising the steps of: placing a cleaning device over a photomask electrostatic seat in a vacuum chamber; adsorbing a polymer material layer of the cleaning device to the photomask static electricity And the cleaning device is separated from the reticle electrostatic seat when the cleaning device is attracted to the reticle electrostatic seat and passes a first time.    The method for cleaning a semiconductor wafer processing system according to claim 1, further comprising: placing a semiconductor wafer over a wafer holder after the cleaning device is adsorbed to the photomask electrostatic seat; and utilizing A ray source performs a lithography process for generating extreme ultraviolet light during exposure of the lithography process to expose the semiconductor wafer.    The cleaning method of the semiconductor wafer processing system of claim 2, further comprising: after separating the cleaning device from the photomask electrostatic seat, determining whether the surface of the photomask electrostatic seat needs to be cleaned; The surface of the reticle electrostatic seat needs to be cleaned, and the cleaning device is placed above the reticle electrostatic seat, and the polymer material layer of the cleaning device is adsorbed to the reticle electrostatic seat through the reticle electrostatic seat, and when The cleaning device is detached from the reticle electrostatic seat and separated from the reticle electrostatic seat by a second time; wherein the second time is greater than the first time.    The cleaning method of the semiconductor wafer processing system of claim 3, further comprising: if the surface of the photomask electrostatic seat does not need to be cleaned, the cleaning device is separated from the photomask electrostatic seat and passes through an interval. When the time is up, the cleaning device is placed above the photomask electrostatic seat, and the polymer material layer of the cleaning device is adsorbed to the photomask electrostatic seat through the photomask electrostatic seat, and when the cleaning device is adsorbed to the photomask When the electrostatic seat passes the first time, the cleaning device is separated from the photomask electrostatic seat.    A semiconductor wafer processing method comprising the steps of: placing a cleaning device over a photomask electrostatic mount in a vacuum chamber; and adsorbing a polymer material layer of the cleaning device through the photomask electrostatic mount a photomask electrostatic seat; after the cleaning device is adsorbed to the photomask electrostatic mount, placing a semiconductor wafer over a wafer holder; performing a first semiconductor process on the semiconductor wafer; and performing the first semiconductor process Thereafter, the cleaning device is separated from the photomask electrostatic mount, and the semiconductor wafer is separated from the wafer holder.    The semiconductor wafer processing method of claim 5, further comprising: after separating the cleaning device from the photomask electrostatic seat, determining whether the surface of the photomask electrostatic seat needs to be cleaned; if the photomask is electrostatically The surface of the seat needs to be cleaned, and the cleaning device is placed above the reticle electrostatic seat, and the polymer material layer of the cleaning device is adsorbed to the reticle electrostatic seat through the reticle electrostatic seat, and when the cleaning device is adsorbed Separating the cleaning device from the reticle electrostatic seat when the reticle electrostatic seat passes a first time; and if the reticle electrostatic seat surface does not need to be cleaned, attaching a reflective reticle to the reticle An electrostatic holder, and after the reflective mask is adsorbed to the photomask electrostatic mount, another semiconductor wafer is placed on the wafer holder, and a second semiconductor process is performed on the other semiconductor wafer, and the After the semiconductor process, the reflective mask is separated from the photomask electrostatic mount, and the other semiconductor wafer is separated from the wafer holder.    The semiconductor wafer processing method of claim 6, further comprising: after separating the cleaning device from the reticle electrostatic seat, determining whether the reticle surface of the reticle needs to be cleaned; and if the reticle The electrostatic seat surface needs to be cleaned, and the cleaning device is placed above the photomask electrostatic seat, and the polymer material layer of the cleaning device is adsorbed to the photomask electrostatic seat through the photomask electrostatic seat, and when the cleaning device is The cleaning device is separated from the photomask electrostatic seat when adsorbed to the photomask electrostatic seat and passes through a second time; wherein the second time is greater than the first time.    A semiconductor wafer processing system includes: a vacuum chamber; and a first cleaning device disposed in the vacuum chamber, and the first cleaning device includes: a first substrate, wherein the material of the first substrate comprises a a low thermal expansion material; a reflective structure disposed over a front side surface of the substrate; a protective layer disposed over the reflective structure; an absorbing layer disposed over the protective layer; a conductive layer disposed on the substrate a first polymer material layer disposed above the conductive layer; a photomask electrostatic seat disposed in the vacuum chamber; a transfer device disposed in the vacuum chamber to selectively apply the first A cleaning device is disposed above the reticle electrostatic seat; and a controller is disposed in the vacuum chamber to control the reticle electrostatic seat and the conveying device; wherein the reticle electrostatic seat electrostatically adsorbs the first cleaning device.    The semiconductor wafer processing system of claim 8, further comprising: a monopolar ultraviolet light source disposed in the vacuum chamber and configured to perform a lithography process, the ray source during the lithography process Used to generate extreme ultraviolet light to expose a semiconductor wafer.    The semiconductor wafer processing system of claim 8, further comprising: a second cleaning device disposed in the vacuum chamber, and the second cleaning device comprises: a second substrate, wherein the second substrate The material includes a crucible; a first metal layer and a second metal layer are respectively disposed above a front side surface and a rear side surface of the second substrate; a first protective layer and a second protective layer are respectively disposed Above the first metal layer and the second metal layer; and a second polymer material layer disposed above the rear side surface of the substrate and above the second protective layer; wherein the photomask electrostatic block passes through Electrostatically adsorbing the second cleaning device.