JP5300784B2 - Semiconductor module and rotating electric machine equipped with semiconductor module - Google Patents

Description

  The present invention relates to a semiconductor module in which a semiconductor switching element is sealed with a resin and a rotating electrical machine for a vehicle or the like equipped with the semiconductor module.

  As a conventional semiconductor device, a semiconductor element, a first metal body provided on one surface side of the semiconductor element and serving as an electrode and a radiator, and a second metal body provided on the other surface side of the semiconductor element and serving as an electrode and a radiator. And a mold resin that encapsulates the semiconductor element, the first metal body, and the second metal body, and the semiconductor element is two IGBT elements disposed adjacent to each other. Each of the two IGBT elements has a temperature sensing pad for detecting the temperature of the element, and only one of the two IGBT elements is electrically connected to the outside. There are those that are electrically connected to the terminals connected to.

Japanese Patent No. 4356494

  In the conventional semiconductor device, the two IGBT elements are connected in parallel and have two terminal portions serving as extraction electrodes serving as main electrodes. For example, when this semiconductor device is used as a switching element for the upper and lower arms of an inverter of a vehicular rotating electrical machine, one semiconductor device is required as each switching element for the upper and lower arms, which increases the number of components and the installation area. there were. In addition, each of the upper and lower arm semiconductor devices requires a signal terminal for connection to the temperature sensing pad, which increases the number of wires and the number of signal terminals connected to the temperature sensing pad. As a result, the size of the semiconductor device is reduced. The area for installing the semiconductor device has increased.

  The present invention has been made to solve the above-described problems, and provides a semiconductor module that can be reduced in size by reducing the number of wires of the semiconductor module and the number of signal terminals for connection to a temperature sensing pad. The purpose is to do. It is another object of the present invention to provide a rotating electrical machine that can reduce the installation area by mounting the miniaturized semiconductor module.

A semiconductor module according to the present invention includes first and second semiconductor switching elements connected in series, and first and second metal frames mounted with the first and second semiconductor switching elements, respectively. A semiconductor module in which a temperature measuring element is formed in at least one of the second semiconductor switching elements, and the resin sealing molding is performed so as to enclose the first and second semiconductor switching elements and the first and second metal frames. The temperature measurement terminal is connected only to the temperature measurement element of one of the first and second semiconductor switching elements, and the temperature measurement terminal is connected to the temperature measurement element. Metal mounting one of the first and second semiconductor switching elements The thermal resistance of the frame, in which higher than the thermal resistance of the metal frame for mounting the other of the semiconductor switching elements of the first and second semiconductor switching elements.

The rotating electrical machine according to the present invention includes a bracket, a stator installed on the bracket and having a stator winding, a rotor installed on a rotary shaft rotatably supported by the bracket, and the stator winding. A power circuit unit having switching elements of upper and lower arms for controlling a current flowing through the first and second semiconductor switching elements connected in series as the power circuit unit, and the first and second semiconductor switching units A first metal frame and a second metal frame on which the elements are mounted, respectively, a temperature measuring element is formed in at least one of the first and second semiconductor switching elements, and the first and second semiconductor switching elements and A semiconductor module molded by resin sealing so as to enclose the first and second metal frames, Includes a semiconductor module connected to the temperature measurement terminal only to said temperature measuring element of one of the semiconductor switching element of the second semiconductor switching element,
The first and second semiconductor switching elements of the semiconductor module are used as the switching elements of the upper and lower arms of the power circuit section.

  According to the present invention, it is possible to provide a semiconductor module that can reduce the number of wires of the semiconductor module and the number of temperature measurement terminals connected to the temperature measurement element, and can be significantly reduced in size. In addition, it is possible to provide a rotating electrical machine that can reduce the installation area of the power circuit section by mounting this miniaturized semiconductor module.

It is sectional drawing which shows the whole structure of the rotary electric machine which mounts the semiconductor module by Embodiment 1 of this invention. It is the side view which looked at the rotary electric machine of Embodiment 1 of this invention from the arrow A direction of FIG. It is a side view which attached the relay board | substrate to the rotary electric machine of Embodiment 1 of this invention. It is a control circuit diagram of the rotary electric machine by Embodiment 1 of this invention. It is the plane schematic diagram and cross-sectional schematic diagram which show the semiconductor module which concerns on Embodiment 1 of this invention. It is a top view of the semiconductor switching element resin-sealed to the semiconductor module of Embodiment 1 of this invention. It is a plane schematic diagram which shows the semiconductor module which concerns on Embodiment 2 of this invention. It is a plane schematic diagram which shows the semiconductor module which concerns on Embodiment 3 of this invention. It is a plane schematic diagram which shows the semiconductor module which concerns on Embodiment 3 of this invention. It is a plane schematic diagram which shows the semiconductor module which concerns on Embodiment 4 of this invention. It is a plane schematic diagram which shows the semiconductor module which concerns on Embodiment 4 of this invention.

Embodiment 1 FIG.
1 is a cross-sectional view showing the overall structure of a rotating electrical machine on which a semiconductor module according to Embodiment 1 of the present invention is mounted. 1 shows a vehicular rotating electric machine integrated with a control device. The rotating electric machine 100 includes a stator 2 installed in a bracket 1 as a housing, and a rotation rotatably supported by the bracket 1. A rotor 3 installed on the shaft 50 is provided. The stator 2 has a stator core 2a and a stator winding 2b. The rotor 3 has a rotor core 3a and a field winding 3b. The rotation shaft 50 is provided with a slip ring portion 5 having a slip ring 5a electrically connected to the field winding 3b. A cooling fan 6 is provided at the end of the rotor core 3a in the rotation axis direction. A brush holder 8 having a brush 7 that is in electrical contact with the slip ring 5 a is provided in the bracket 1.

  Further, in the bracket 1, a disk-shaped heat sink 10, a power circuit unit 20 for supplying power to the stator winding 2b, and a field circuit unit 30 for supplying current to the field winding 3b are provided. A wiring member 14 for relaying the stator winding 2b and the power circuit unit 20, a case 12 in which a terminal such as a power wiring is inserted, and a resolver 9 for detecting a rotation angle are provided. Outside the bracket 1, a control circuit unit 15 having a control board 15a for controlling the power circuit unit 20 and the field circuit unit 30 is provided.

  FIG. 2 is a side view of the rotating electrical machine of FIG. 1 as viewed from the direction of arrow A, and shows a state in which the power circuit unit 20 and the field circuit unit 30 are mounted on the heat sink 10. The power circuit unit 20 and the field circuit unit 30 are each composed of one mold-sealed module, and are fixed to the same surface of the heat sink 10 with an insulating adhesive 16 (see FIG. 1). The heat sink 10 has a disk shape, and cooling fins 10 a are arranged on the back surfaces of the power circuit unit 20 and the field circuit unit 30, respectively. By making the heat sink 10 into a disk shape, the arrangement space in the bracket 1 can be used effectively, the size of the heat sink 10 can be maximized, and the installation space for the power circuit section 20 and the field circuit section 30 can be maximized. And the area of the cooling fin can be secured.

  In addition, a case 12 in which power wiring or the like is inserted is fixed to the heat sink 10 with an adhesive so as to surround the power circuit portion 20 and the field circuit portion 30. Furthermore, the power wiring terminal 24 provided on the first side of the power circuit unit 20 and the field circuit unit 30 is joined to the terminal of the power wiring on the case 12 side. And after arrange | positioning the relay substrate 11 for consolidating the signal terminal 22 for control provided in the 2nd edge part of the power circuit part 20 and the field circuit part 30, the inside of case 12 is resin-sealed. Thus, the electronic module 40 is configured.

  As shown in FIG. 2, a large number of signal terminals 22 for controlling the power circuit unit 20 and the field circuit unit 30 are arranged on the center side of the heat sink 10. The control signal terminal 22 needs to be connected to the control board 15a of the control circuit unit 15 outside the bracket 1. However, since the positions of the signal terminals 22 are scattered inside the electronic module 40, the control board is left as it is. Connection with 15a is difficult. Therefore, as shown in FIG. 3, by using the relay board 11, the signal terminals 22 scattered inside the electronic module 40 can be aggregated, and by using the connector 13 or the like, it can be easily connected to the control board 15 a. .

  Returning to FIG. 1, the brush holder 8 is fixed to the back side of the field circuit portion 30 of the heat sink 10. The periphery of the fixed portion of the field circuit portion 30 of the heat sink 10 is recessed so that the brush holder 8 can be accommodated. The field circuit unit 30 and the brush holder 8 are connected by a terminal inserted in the case 12. When the heat sink 10 is depressed, the cooling fin 10a on the back side of the field circuit unit 30 is shortened. However, since the heat sink 10 has a disk shape and is shared with the power circuit unit 20, The decrease in cooling fins can be compensated for by the diffusion of.

  In addition to the brush holder 8, a wiring member 14 is connected to the heat sink 10. The stator 2 and the electronic module 40 are connected via the wiring member 14. When the wiring attachment positions of the stator 2 and the electronic module 40 are different, they cannot be attached as they are. In particular, the position of the coil end may change depending on the winding specifications of the stator winding 2b. However, by using the wiring member 14, the wiring can be routed to the attachment position of both, and can be attached. Thereby, the stator 2 and the electronic module 40 can be designed without worrying about the wiring position, and the degree of freedom in arrangement can be increased. Further, by arranging the wiring member 14 and the brush holder 8 between the heat sink 10 and the cooling fan 6, an efficient cooling air passage can be configured.

  Here, the rotating electrical machine has a minimum volume by forming a cylindrical shape because basic components rotate. In particular, the engine room of an automobile has been made compact in order to maximize the expansion of the compartment, and from the viewpoint of safety, the engine and the rotating electrical machine mounted in the engine room have been required to be downsized. . Therefore, it is an important matter to reduce the size of the power circuit unit 20 by reducing the number of terminals of the mold-sealed semiconductor module used for the power circuit unit 20. Also, it is an important matter to achieve efficient miniaturization of the product to efficiently arrange the power circuit unit 20 in a limited space of the heat sink 10.

  FIG. 4 is a control circuit diagram of the rotating electrical machine of FIG. In FIG. 4, the stator winding 2b (see FIG. 1) includes two sets of three-phase windings 2b1 (U-phase, V-phase, W-phase) and three-phase windings 2b2 (X-phase, Y-phase, Z-phase). It has. The PN terminal of the battery 60 is connected to the three-phase windings 2b1 and 2b2, respectively, and two sets of inverter units 70a and 70b for supplying an armature current, and a field for supplying a field current to the field winding 3b. A magnetic circuit unit 30 is connected. The control circuit unit 15 controls the field circuit unit 30 and the inverter units 70a and 70b according to the operating state of the rotating electrical machine. The inverter units 70a and 70b are connected in a three-phase bridge with a circuit in which the first semiconductor switching element 21a of the upper arm and the second semiconductor switching element 21b of the lower arm are connected in series as one phase. In the present invention, a circuit for one phase in which the first semiconductor switching element 21a of the upper arm and the second semiconductor switching element 21b of the lower arm are connected in series is referred to as a power circuit unit 20. The control circuit unit 15 performs on / off control of the semiconductor switching elements 21a and 21b of the inverter units 70a and 70b, respectively. Although FIG. 4 shows an example of MOSFET as the semiconductor switching elements 21a and 21b, a switching element such as an IGBT may be used. Moreover, although what provided two sets of three-phase windings 2b1 and 2b2 as a stator winding was shown, what was provided with one set or several sets of three-phase windings may be sufficient.

5 is a schematic plan view and a schematic cross-sectional view showing the semiconductor module according to Embodiment 1 of the present invention. FIG. 6 is a plan view of the semiconductor switching element resin-sealed in the semiconductor module of FIG. Yes.
The power circuit unit 20 described with reference to FIGS. 1 to 4 corresponds to the semiconductor module shown in FIG. That is, as shown in FIG. 5, the power circuit unit 20 includes first and second semiconductor switching elements 21a and 21b connected in series, and first and second semiconductor switching elements 21a and 21b, respectively. The first and second metal frames 23a and 23b are provided and are resin-sealed using transfer molding to form one mold-sealed semiconductor module. The first semiconductor switching element 21 a corresponds to the switching element of the upper arm of the power circuit unit 20, and the second semiconductor switching element 21 b corresponds to the switching element of the lower arm of the power circuit unit 20.
As shown in FIG. 6, each of the first and second semiconductor switching elements 21a and 21b includes a diode as a temperature measuring element 25 that measures the temperature of the switching element. The first and second semiconductor switching elements 21 a and 21 b include a signal connection pad 26 a for control signals and a temperature measurement pad 26 b connected to the temperature measurement element 25.

Here, in order to increase the productivity of a mold resin-sealed semiconductor module such as the power circuit unit 20 of the present embodiment, it is effective to reduce the package size, and in particular, to reduce the number of control signal terminals. The reason why is necessary is described below.
(1) When the first and second semiconductor switching elements 21a and 21b of the power circuit unit 20 as described in this embodiment are modularized, three power wiring terminals, a P-side terminal, an N-side terminal, and an output terminal , The gate terminals for control signals of the first and second semiconductor switching elements 21a and 21b, and the temperature measurement terminals (for example, the anode terminal and cathode terminal of the diode) of the temperature measurement element (for example, diode) 25 are the lowest. Limited is required. Since the three terminals of the P-side terminal, N-side terminal, and output terminal as power wiring terminals require a cross-sectional area corresponding to the amount of current, the cross-sectional area of the current path determined from the thickness and width of the metal frame It is necessary to ensure. On the other hand, the gate terminal, the source potential terminal, and the temperature measurement terminal, which are control signal terminals, do not require a current amount and may have a minimum cross-sectional area.
By the way, in such a mold resin-sealed type semiconductor module, a metal frame having a predetermined circuit shape is formed by pressing a normally rolled metal plate by press working. As a guide, the thickness of the metal frame is taken as a guide.
In order to secure the cross-sectional area of the power wiring terminal, a metal frame having a large thickness is required. However, due to the punching width restriction of the punch, the dimension of the signal terminal becomes larger than necessary. For example, in the case of a metal frame having a thickness of 0.8 mm, the signal terminal width needs to be 0.8 mm, and the signal terminal gap needs to be 0.8 mm. In this case, when a large number of signal terminals are formed, the width necessary for the signal terminals exceeds the width necessary for housing the semiconductor switching element. Therefore, it is necessary to reduce the number of signal terminals.

(2) In addition, as an influence of the transfer mold forming apparatus on the package size, it is essential to increase the accuracy of the mold and sufficiently apply the press pressure in order to apply resin pressure as high as 100 atm during molding. . Here, the press pressure needs to be increased to prevent the mold from opening due to bending to the molding pressure, but the necessary press pressure increases proportionally as the area of the resin sealing region increases. There is. Since the process time from the start of molding to opening the mold is required to be at least 2 minutes, in order to increase productivity, a large number of small resin-sealed modules must be installed while minimizing the press pressure. It is necessary to mold at the same time. Thus, downsizing of the resin-encapsulated module by reducing the number of signal terminals is necessary to increase productivity.

Next, returning to FIG. 5, how to reduce the number of signal terminals in a molded resin-encapsulated semiconductor module such as the power circuit unit 20 of the present embodiment will be described.
In FIG. 5, the first semiconductor switching element 21a is mounted on the first metal frame 23a, and the second semiconductor switching element 21b is mounted on the second metal frame 23b and is electrically connected to each other. The electrode on the upper surface of the first semiconductor switching element 21a and the second metal frame 23b are connected by a wire 28a, and the electrode on the upper surface of the second semiconductor switching element 21b and the third metal frame 23c are connected by a wire 28b. Further, the first metal frame 23a includes a power wiring terminal 24a protruding as a P-side terminal, the second metal frame 23b includes a power wiring terminal 24b protruding as each phase output terminal, and the third metal frame 23c is an N-side terminal. As shown in FIG. The signal connection pad 26a of the first semiconductor switching element 21a is connected to the signal terminal 22a by a wire 28, and the temperature measurement pad 26b of the first semiconductor switching element 21a is connected to the temperature measurement terminal 22b by a wire 28. . On the other hand, the signal connection pad 26a of the second semiconductor switching element 21b is connected to the signal terminal 22a by the wire 28, but there is no temperature measurement terminal to which the temperature measurement pad of the second semiconductor element switching element 21b is connected. . Here, the power circuit unit 20 is installed on the condition that the temperature of the first semiconductor switching element 21a becomes higher than the temperature of the second semiconductor switching element 21b. The first and second semiconductor switching elements 21a and 21b and the metal frame 23 (23a, 23b, 23c) project the power wiring terminal 24 (24a, 24b, 24c) and the signal terminal 22 (22a, 22b) to the outside. The mold is sealed with a sealing resin 27.

  In the field circuit section 30, similarly to the power circuit section 20, a metal frame on which electronic components such as a field semiconductor switching element and a capacitor for supplying current to the field winding 3 b are mounted by transfer molding. A single mold-sealed semiconductor module is formed by resin sealing. The power circuit unit 20 and the field circuit unit 30 are fixed to the same plane of the heat sink 10 with an insulating adhesive 16. In the present embodiment, six power circuit units 20 and one field circuit unit 30 are arranged circumferentially on the heat sink 10. The metal frame is made of, for example, copper or copper alloy having good thermal conductivity.

  As described above, according to the present embodiment, the temperature measuring terminal 22b is connected only to the temperature measuring element 25 of the first switching element 21a having the higher temperature among the first and second semiconductor switching elements 21a and 21b. Like that. That is, by connecting only the temperature measuring element 25 to the first semiconductor switching element 21a having a high temperature, the number of wires and the number of control signal terminals can be reduced, and the power circuit unit 20 can be miniaturized. For example, when the temperature measurement is performed using the switching elements of the upper and lower arms of the inverters 70a and 70b in FIG. 4, the number of terminals for measuring the temperature of the semiconductor module increases and the size increases, and each temperature measurement of the switching elements of the upper and lower arms. Inspecting the characteristics of the element increases the inspection time. However, according to the present embodiment, the number of terminals for temperature measurement can be reduced by measuring only the first semiconductor switching element having the higher temperature. This leads to a reduction in size and cost of the power circuit section.

  Further, as shown in FIG. 5, the number of the first and second semiconductor switching elements 21a and 21b mounted on the semiconductor module is reduced to one, so that the external wiring for the temperature measuring element 25 can be reduced. If the projected area of the switching element is the same, multiple switching elements require lines and spaces between the switching elements, but by using one each, these lines and spaces can be eliminated, reducing the size of the metal frame Leads to. The number of the first and second semiconductor switching elements 21a and 21b mounted on the semiconductor module may be plural.

Embodiment 2. FIG.
FIG. 7 is a schematic plan view showing a semiconductor module according to Embodiment 2 of the present invention.
In FIG. 7, the element mounting portion area of the metal frame 23a on which the first semiconductor switching element 21a for measuring the temperature by the temperature measuring element 25 is mounted is mounted on the second semiconductor switching element 21b on which the temperature is not measured. It is smaller than the element mounting portion area of the metal frame 23b. However, the material and thickness of the metal frame 23a and the metal frame 23b are the same.
That is, the thermal resistance of the metal frame 23a of the first semiconductor switching element 21a that performs temperature measurement is larger than the thermal resistance of the metal frame 23b of the second semiconductor switching element 21b that does not perform temperature measurement, and the first temperature measurement is performed. The temperature of the semiconductor switching element 21a is always higher than the temperature of the second semiconductor switching element 21b that does not perform temperature measurement, and the temperature of the first semiconductor switching element 21a having the higher temperature is measured, thereby protecting the switching element. Can be planned. In the example of FIG. 7, the metal frame has a difference in the element mounting portion area so that the metal frame has a different thermal resistance. However, the metal frame has a difference in material to provide a difference in the thermal resistance. Also good.

Embodiment 3 FIG.
FIG. 8 is a schematic plan view showing a semiconductor module according to Embodiment 3 of the present invention.
In the present embodiment, the switching element is protected by measuring only the temperature of the second semiconductor switching element 21 b corresponding to the lower arm of the power circuit unit 20. That is, the temperature measurement pad of the second semiconductor switching element 21b is connected to the temperature measurement terminal 22b by a wire, while the temperature measurement terminal connected to the temperature measurement pad of the first semiconductor element switching element 21a is eliminated.

  In the case of a rotating electrical machine for a vehicle, in order to protect the rotating electrical machine and improve the ride comfort of the driver, it is necessary to perform overvoltage protection, body vibration suppression at idling stop, motor torque control at start, In the control circuit of FIG. 4, a three-phase short circuit state is established. In the case of a three-phase short circuit, a current flows through the second semiconductor switching element 21 b corresponding to the lower arm of the power circuit unit 20. That is, a large current flows through the second semiconductor switching element 21b, and there is a possibility that the temperature of the second semiconductor switching element 21b rapidly increases. Therefore, in the case of the three-phase short-circuit operation, it is necessary to measure the temperature of the second semiconductor switching element 21b of the lower arm. In addition, since the average current flows more in the second semiconductor switching element 21b in the lower arm than in the first semiconductor switching element 21a in the upper arm, the temperature of the second semiconductor switching element 21b in the lower arm is higher than that in the upper arm. 1 It becomes higher on average than the temperature of the semiconductor switching element 21a. Therefore, it is necessary to connect the temperature measurement pad 26b of the temperature measurement element 25 of the second semiconductor switching element 21b of the lower arm and the temperature measurement terminal 22b.

  As described above, according to the present embodiment, since a large current flows through the semiconductor switching element 21b of the lower arm in the three-phase short circuit state, the temperature of only the second semiconductor switching element 21b of the lower arm having a high temperature is measured. Thus, the semiconductor switching element can be reliably protected.

  In the case of the present embodiment, as shown in FIG. 9, the element mounting portion area of the metal frame 23b on which the second semiconductor switching element 21b of the lower arm that performs temperature measurement is mounted is the first semiconductor that does not perform temperature measurement. The first semiconductor switching element in which the thermal resistance of the metal frame 23b mounted on the second semiconductor switching element 21b for measuring the temperature is made smaller than the element mounting portion area of the metal frame 23a on which the switching element 21a is mounted, and the temperature is not measured. The thermal resistance of the metal frame 23a mounted on 21a is made larger. Thus, the temperature of the semiconductor switching element 21b in the lower arm is reliably increased. Therefore, the semiconductor switching element can be reliably protected by measuring the temperature of only the semiconductor switching element 21b in the lower arm.

Embodiment 4 FIG.
10 and 11 are schematic plan views showing a semiconductor module according to Embodiment 4 of the present invention.
In the above embodiment, the same type of semiconductor switching element is used as the first and second semiconductor switching elements 21a and 21b. That is, the first and second semiconductor switching elements 21a and 21b are each provided with a temperature measuring element (diode) 25 and a temperature measuring pad 26b.
In the present embodiment, for example, as shown in FIG. 10, the second semiconductor switching element for measuring temperature uses a semiconductor switching element 21b having a temperature measuring element (diode) 25 and a temperature measuring pad 26b, and the temperature is not measured. One semiconductor switching element uses the semiconductor switching element 21a ′ having the same element size without the temperature measuring element (diode) 25 and the temperature measuring pad 26b.
In this way, since the transistor can be formed in the portion where the temperature measuring element (diode) is formed in the first semiconductor switching element 21a ′, the on-resistance of the switching element can be reduced with the same element size. Performance can be improved, heat generation of the first semiconductor switching element 21a ′ can be reduced, and there is a temperature reduction effect.

As shown in FIG. 11, the second semiconductor switching element for measuring temperature uses a semiconductor switching element 21b having a temperature measuring element (diode) 25 and a temperature measuring pad 26b, and the first semiconductor switching element for which temperature is not measured is The semiconductor switching element 21a ″ having a small element size that does not have the temperature measuring element (diode) 25 and the temperature measuring pad 26b is used.
In this way, the amount of heat generated by the first semiconductor switching element 21a ″ is reduced, so that the metal frame 23a on which the first semiconductor switching element 21a ″ is mounted can be made smaller, leading to a reduction in module size.

Embodiment 5 FIG.
In the present embodiment, as shown in FIG. 6, a temperature measuring element (diode) 25 is arranged on the outer periphery of the first and second semiconductor switching elements 21a and 21b.

  By disposing the temperature measuring element (diode) 25 on the outer periphery of the first and second semiconductor switching elements 21a and 21b, the electrode area on the upper surface serving as the energization path for the first and second semiconductor switching elements 21a and 21b is widened. Can be used. As a result, the on-resistances of the first and second semiconductor switching elements 21a and 21b can be reduced, and heat generation can be reduced.

  Further, if the correlation between the temperature in the portion where the maximum temperature in the first and second semiconductor switching elements 21a and 21b and the temperature measuring element (diode) 25 are measured is examined, the temperature measuring element (diode) The maximum switching element temperature can be calculated and the switching element can be protected even if the mounting position of 25 is not located at the maximum temperature position of the first and second semiconductor switching elements 21a and 21b.

  As described above, according to the present embodiment, the mounting position of the temperature measuring element (diode) 25 is arranged on the outer peripheral side of the first and second semiconductor switching elements 21a and 21b, so that the semiconductor switching element can further generate heat. Can be reduced.

100 Rotating electric machine, 2 Stator, 2a Stator core, 2b Stator winding,
2b1 and 2b2 three-phase winding, 3 rotor, 3a rotor core, 3b field winding,
5 slip ring, 6 cooling fan, 7 brush, 8 brush holder,
10 heat sink, 10a cooling fin, 11 relay board, 12 case,
13 Connector, 14 Wiring member, 15 Control circuit part, 20 Power circuit part,
21a and 21b first and second semiconductor switching elements, 22 signal terminals,
23a, 23b, 23c first, second and third metal frames, 24 power wiring terminals,
25 Temperature measurement element, 26a Signal connection pad, 26b Temperature measurement pad,
27 sealing resin, 28 wires, 30 field circuit section, 40 electronic module,
50 rotating shaft, 60 battery, 70a and 70b inverter part.

Claims (13)

First and second semiconductor switching elements connected in series, and first and second metal frames mounted with the first and second semiconductor switching elements, respectively, and at least of the first and second semiconductor switching elements A semiconductor module in which a temperature measuring element is formed in one semiconductor switching element, and the first and second semiconductor switching elements and the first and second metal frames are encapsulated with resin,
A temperature measurement terminal is connected only to the temperature measurement element of one of the first and second semiconductor switching elements ,
The thermal resistance of the metal frame on which one of the first and second semiconductor switching elements having the temperature measuring terminal connected to the temperature measuring element is mounted, and the other of the first and second semiconductor switching elements. A semiconductor module having a higher thermal resistance than the metal frame on which the semiconductor switching element is mounted . The first and second semiconductor switching elements connected in series are used as switching elements for the upper and lower arms of the power circuit unit, and only for the temperature measuring element of the semiconductor switching element corresponding to the lower arm of the power circuit unit. The semiconductor module according to claim 1, wherein the temperature measurement terminal is connected. The semiconductor module according to claim 1 or claim 2 in the semiconductor switching element which is not connected to the temperature measuring terminal does not form the thermometric element among the first and second semiconductor switching elements. 4. The semiconductor module according to claim 1, wherein the temperature measuring element is disposed on an outer peripheral side of the first and second semiconductor switching elements. 5. The semiconductor module according to any one of claims 1 to 4 which constitute the first and second semiconductor switching element in one switching element, respectively. A bracket, a stator installed on the bracket and having a stator winding, a rotor installed on a rotary shaft rotatably supported by the bracket, and a current flowing through the stator winding It has a power circuit unit having upper and lower arm switching elements,
The power circuit unit includes first and second semiconductor switching elements connected in series, and first and second metal frames on which the first and second semiconductor switching elements are mounted, respectively. A semiconductor module in which a temperature measuring element is formed on at least one of the semiconductor switching elements, and the first and second semiconductor switching elements and the first and second metal frames are encapsulated with resin. A semiconductor module having a temperature measurement terminal connected only to the temperature measurement element of one of the first and second semiconductor switching elements,
  A rotating electrical machine using the first and second semiconductor switching elements of the semiconductor module as switching elements of upper and lower arms of the power circuit unit. The semiconductor module uses the first and second semiconductor switching elements connected in series as the switching elements of the upper and lower arms of the power circuit unit, and the semiconductor switching element corresponding to the lower arm of the power circuit unit. The rotating electrical machine according to claim 6, which is a semiconductor module in which the temperature measurement terminal is connected only to the temperature measurement element. The semiconductor module has a thermal resistance of a metal frame on which one of the first and second semiconductor switching elements having the temperature measurement terminal connected to the temperature measurement element is mounted, and the first and second semiconductors. The rotating electrical machine according to claim 6 or 7, which is a semiconductor module having a higher thermal resistance than a metal frame on which the other semiconductor switching element is mounted among the switching elements. 9. The semiconductor module according to claim 6, wherein the semiconductor module is a semiconductor module in which the temperature measuring element is not formed in a semiconductor switching element that is not connected to the temperature measuring terminal among the first and second semiconductor switching elements. The rotating electrical machine according to the item. The rotating electrical machine according to any one of claims 6 to 9, wherein the semiconductor module is a semiconductor module in which the temperature measuring element is disposed on an outer peripheral side of the first and second semiconductor switching elements. The rotating electrical machine according to any one of claims 6 to 10, wherein the semiconductor module is a semiconductor module in which each of the first and second semiconductor switching elements is constituted by a single switching element. The rotating electrical machine according to any one of claims 6 to 11, wherein a disk-shaped heat sink is provided in the rotating electrical machine, and the power circuit is arranged circumferentially on the heat sink. The rotor includes a field winding, and includes a field circuit unit for controlling a current flowing through the field winding. The field circuit unit is a mold-sealed module, and includes the mold sealing unit. The rotating electrical machine according to claim 12, wherein the stationary module is disposed on the disk-shaped heat sink.

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