JP5299347B2 - 露光装置、液体供給方法、及びデバイス製造方法 - Google Patents

露光装置、液体供給方法、及びデバイス製造方法 Download PDF

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Publication number
JP5299347B2
JP5299347B2 JP2010101431A JP2010101431A JP5299347B2 JP 5299347 B2 JP5299347 B2 JP 5299347B2 JP 2010101431 A JP2010101431 A JP 2010101431A JP 2010101431 A JP2010101431 A JP 2010101431A JP 5299347 B2 JP5299347 B2 JP 5299347B2
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liquid
substrate
exposure apparatus
liquid supply
functional
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JP2010199607A5 (enExample
JP2010199607A (ja
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正幸 村山
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Nikon Corp
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Nikon Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010101431A 2010-04-26 2010-04-26 露光装置、液体供給方法、及びデバイス製造方法 Expired - Fee Related JP5299347B2 (ja)

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JP2010101431A JP5299347B2 (ja) 2010-04-26 2010-04-26 露光装置、液体供給方法、及びデバイス製造方法

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JP2010101431A JP5299347B2 (ja) 2010-04-26 2010-04-26 露光装置、液体供給方法、及びデバイス製造方法

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JP2004226583A Division JP4534651B2 (ja) 2004-08-03 2004-08-03 露光装置、デバイス製造方法及び液体回収方法

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JP2010199607A JP2010199607A (ja) 2010-09-09
JP2010199607A5 JP2010199607A5 (enExample) 2011-08-18
JP5299347B2 true JP5299347B2 (ja) 2013-09-25

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Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
WO2004050266A1 (ja) * 2002-12-03 2004-06-17 Nikon Corporation 汚染物質除去方法及び装置、並びに露光方法及び装置
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US20050231695A1 (en) * 2004-04-15 2005-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for immersion lithography using high PH immersion fluid
JP2006005122A (ja) * 2004-06-17 2006-01-05 Sony Corp 露光方法および露光装置

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