JP5286150B2 - Semiconductor device for power conversion - Google Patents

Semiconductor device for power conversion Download PDF

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JP5286150B2
JP5286150B2 JP2009104904A JP2009104904A JP5286150B2 JP 5286150 B2 JP5286150 B2 JP 5286150B2 JP 2009104904 A JP2009104904 A JP 2009104904A JP 2009104904 A JP2009104904 A JP 2009104904A JP 5286150 B2 JP5286150 B2 JP 5286150B2
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control circuit
circuit board
electrode plate
pair
semiconductor device
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JP2010258135A (en
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史生 浅倉
雅也 殿本
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Denso Corp
Soken Inc
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Nippon Soken Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for a power conversion for being further miniaturized and having an excellent noise-resistant performance. <P>SOLUTION: The semiconductor device for the power conversion includes a pair of metallic electrode plates 2 (2a and 2b) oppositely arranged at a regular interval. Switching elements 3 electrically connected to a pair of the electrode plates 2 respectively are mounted between a pair of the electrode plates 2. A control circuit board 4 forming a control circuit controlling the switching elements 3 is mounted between a pair of the electrode plates 2. The control circuit board 4 is attached to either one of a pair of the electrode plates 2 through a shielding means 10 shielding electromagnetic noises. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、小型化でき、耐ノイズ性能に優れた電力変換用半導体装置に関する。   The present invention relates to a semiconductor device for power conversion that can be downsized and has excellent noise resistance performance.

従来から、インバータ等に用いる電力変換用半導体装置が知られている（下記特許文献１）。この電力変換用半導体装置は図１２に示すごとく、電極板９１と、絶縁板９２と、金属板９３と、パワー素子９４と、金属板９５と、絶縁板９６とを積層した構造を有しており、パワー素子９４を制御するための制御回路９７が絶縁板９６上に形成されている。制御回路９７は、パワー素子９４に過電流が流れた場合に、素子を保護するため電流を遮断する等の制御を行う。   Conventionally, a semiconductor device for power conversion used for an inverter or the like is known (Patent Document 1 below). This power conversion semiconductor device has a structure in which an electrode plate 91, an insulating plate 92, a metal plate 93, a power element 94, a metal plate 95, and an insulating plate 96 are laminated as shown in FIG. A control circuit 97 for controlling the power element 94 is formed on the insulating plate 96. The control circuit 97 performs control such as cutting off the current to protect the element when an overcurrent flows through the power element 94.

一方の金属板９５は、パワー素子９４のエミッタ及びグランドに接続されており、他方の金属板９３は、コレクタに接続されている。制御回路９７は、グランド接続側の金属板９５の近傍に形成され、コレクタ接続側の金属板９３から離して設けられている。これは、コレクタ接続側の金属板９３から電磁ノイズが放射されるため、この電磁ノイズの影響を低減するためである。   One metal plate 95 is connected to the emitter and ground of the power element 94, and the other metal plate 93 is connected to the collector. The control circuit 97 is formed in the vicinity of the metal plate 95 on the ground connection side, and is provided apart from the metal plate 93 on the collector connection side. This is because electromagnetic noise is radiated from the metal plate 93 on the collector connection side, so that the influence of this electromagnetic noise is reduced.

特開２００３−１７６５８号公報JP 2003-17658 A

ところが、電力変換用半導体装置９０は、上述のように電極板９１〜制御回路９７を積層して形成しているため、全体のサイズが大きくなるという問題がある。そのため、より小型化できる電力変換用半導体装置が望まれている。   However, since the power conversion semiconductor device 90 is formed by laminating the electrode plates 91 to the control circuit 97 as described above, there is a problem that the overall size becomes large. Therefore, a power conversion semiconductor device that can be further reduced in size is desired.

しかしながら小型化すると、コレクタ接続側の金属板９３と制御回路９７とが接近し、金属板９３から発生した電磁ノイズの影響を制御回路９７が受けやすくなるという問題がある。そのため、小型化でき、かつ耐ノイズ性能に優れた電力変換用半導体装置が望まれている。   However, when the size is reduced, there is a problem that the metal plate 93 on the collector connection side and the control circuit 97 come close to each other, and the control circuit 97 is easily affected by electromagnetic noise generated from the metal plate 93. Therefore, there is a demand for a power conversion semiconductor device that can be miniaturized and has excellent noise resistance.

本発明は、かかる従来の問題点に鑑みてなされたもので、より小型化でき、耐ノイズ性能に優れた電力変換用半導体装置を提供しようとするものである。   The present invention has been made in view of such conventional problems, and an object of the present invention is to provide a power conversion semiconductor device that can be further reduced in size and has excellent noise resistance.

本発明は、所定間隔をおいて対向配置した一対の電極板と、
上記一対の電極板の間に設けられ、該一対の電極板に各々電気的に接続されたスイッチング素子と、
上記一対の電極板の間に設けられ、上記スイッチング素子を制御する制御回路が形成された制御回路基板とを備え、
上記制御回路基板は、上記一対の電極板のいずれか一方に、電磁ノイズを遮蔽する遮蔽手段を介して取り付けられ、
上記電極板に溝部が形成され、該溝部内には絶縁部材が設けられておらず、該溝部上に上記制御回路基板が配置されており、該溝部内の空間が上記遮蔽手段をなしていることを特徴とする電力変換用半導体装置にある（請求項１）。 The present invention includes a pair of electrode plates arranged to face each other at a predetermined interval;
A switching element provided between the pair of electrode plates and electrically connected to the pair of electrode plates,
A control circuit board provided between the pair of electrode plates and formed with a control circuit for controlling the switching element;
The control circuit board is attached to any one of the pair of electrode plates via shielding means for shielding electromagnetic noise ,
A groove is formed in the electrode plate, no insulating member is provided in the groove, the control circuit board is disposed on the groove, and the space in the groove serves as the shielding means . The power conversion semiconductor device is characterized by the above.

本発明の作用効果につき説明する。本発明によると、一対の電極板の間にスイッチング素子と、制御回路基板とを設けたので、従来のように電極板９１〜制御回路９７を順次積層した構造（図１２参照）と比較して、全体の厚さを薄くすることができ、かつ小型化できる。   The function and effect of the present invention will be described. According to the present invention, since the switching element and the control circuit board are provided between the pair of electrode plates, the entire structure is compared with the conventional structure in which the electrode plates 91 to 97 are sequentially stacked (see FIG. 12). The thickness can be reduced and the size can be reduced.

また、上記構成を採用すると、電磁ノイズを放射する電極板と、制御回路基板とが接近することになるが、本発明では上記遮蔽手段を設けたため、制御回路基板が電磁ノイズの影響を受けにくい。
遮蔽手段としては、制御回路基板と電極板との間に絶縁部材を設けたり、隙間（空間）をおいたりすることができる。例えば、遮蔽手段として絶縁部材を設けることにより、電極板と制御回路基板との間の間隔を広げて浮遊容量を低減することができ、電極板から放射される電磁ノイズを遮蔽することができる。これにより、制御回路基板の誤動作を防止できる。 Further, when the above configuration is adopted, the electrode plate that radiates electromagnetic noise and the control circuit board come close to each other. However, since the shielding means is provided in the present invention, the control circuit board is not easily affected by the electromagnetic noise. .
As the shielding means, an insulating member can be provided between the control circuit board and the electrode plate, or a gap (space) can be provided. For example, by providing an insulating member as a shielding means, the space between the electrode plate and the control circuit board can be widened to reduce stray capacitance, and electromagnetic noise radiated from the electrode plate can be shielded. Thereby, malfunction of the control circuit board can be prevented.

以上のごとく、本発明によると、より小型化でき、耐ノイズ性能に優れた電力変換用半導体装置を提供することができる。   As described above, according to the present invention, it is possible to provide a power conversion semiconductor device that can be further downsized and has excellent noise resistance.

参考例１における、電力変換用半導体装置の横断面図であって、図２のＢ−Ｂ断面図に制御端子、ワイヤ等を追加した図。 It is a cross-sectional view of the semiconductor device for power conversion in Reference Example 1, and is a diagram in which control terminals, wires, and the like are added to the BB cross-sectional view of FIG. 図１のＡ−Ａ断面図。AA sectional drawing of FIG. 参考例１における、電力変換用半導体装置を用いたインバータの回路図。The circuit diagram of the inverter using the semiconductor device for power conversion in the reference example 1. FIG. 参考例１における、スイッチング素子を２個搭載した電力変換用半導体装置。 The semiconductor device for power conversion which mounts two switching elements in the reference example 1. 参考例１における、絶縁部材を四角形状にした電力変換用半導体装置の断面図。Sectional drawing of the semiconductor device for power conversion which made the insulating member the square shape in the reference example 1. FIG. 参考例１における、電極板の形状を変えた例。 The example which changed the shape of the electrode plate in the reference example 1. FIG. 参考例２における、電力変換用半導体装置の断面図。Sectional drawing of the semiconductor device for power conversion in the reference example 2. FIG. 図７の要部拡大図。The principal part enlarged view of FIG. 実施例１における、電力変換用半導体装置の断面図。Sectional drawing of the semiconductor device for power conversion in Example 1. FIG. 参考例３における、電力変換用半導体装置の断面図。Sectional drawing of the semiconductor device for power conversion in the reference example 3. FIG. 図１０の要部拡大図。The principal part enlarged view of FIG. 従来例における、電力変換用半導体装置の断面図。Sectional drawing of the semiconductor device for power conversion in a prior art example.

上述した本発明における好ましい実施の形態につき説明する。
本発明において、上記制御回路基板と上記電極板との間に絶縁部材が設けられており、該絶縁部材が上記遮蔽手段をなしていることが好ましい。
この場合には、絶縁部材によって、電極板と制御回路基板との間の絶縁性を高めることができる。また、絶縁部材を厚くすることにより、電極板から発生した電磁ノイズを効果的に遮蔽できる。 A preferred embodiment of the present invention described above will be described.
In the present invention, the insulating member is provided between the control circuit board and the electrode plate, not preferable that the insulating member is no said shielding means.
In this case, the insulation between the electrode plate and the control circuit board can be enhanced by the insulating member. In addition, by increasing the thickness of the insulating member, electromagnetic noise generated from the electrode plate can be effectively shielded.

また、上記一対の電極板のいずれか一方に切欠部が設けられ、該切欠部に上記絶縁部材が取り付けらており、該絶縁部材上に上記制御回路基板が設けられていることが好ましい。
このように切欠部を形成すると、電力変換用半導体装置の厚みを大きくすることなく絶縁部材を厚く形成することができる。これにより、電極板から照射される電磁ノイズを効果的に遮断できるとともに、電力変換用半導体装置を小型化することができる。 Further, the cutout portion in one of the pair of electrode plates is provided, the insulating member is attached, et al in the notch portion, not preferable that the control circuit board is provided on the insulating member .
When the notch is formed in this way, the insulating member can be formed thick without increasing the thickness of the power conversion semiconductor device. Thereby, the electromagnetic noise irradiated from the electrode plate can be effectively cut off, and the power conversion semiconductor device can be miniaturized.

また、上記電極板に溝部が形成され、該溝部内には絶縁部材が設けられておらず、該溝部上に上記制御回路基板が配置されており、該溝部内の空間が上記遮蔽手段をなしている。
この場合には、溝部内に絶縁部材を設ける必要がないため、製造工程を簡単にすることができる。また、溝部を深く形成するだけで、浮遊容量を簡単に減らすことができ、電磁ノイズを低減できる。 Also, a groove is formed in the electrode plate, no insulating member is provided in the groove, the control circuit board is disposed on the groove, and the space in the groove serves as the shielding means. Tei Ru.
In this case, since it is not necessary to provide an insulating member in the groove, the manufacturing process can be simplified. In addition, stray capacitance can be easily reduced and electromagnetic noise can be reduced simply by forming the groove deeply.

また、上記制御回路基板は、上記スイッチング素子のグランドに接続された金属層を有し、該金属層は上記電極板と上記制御回路基板上の電子素子との間に介在することによって、上記遮蔽手段をなしていることが好ましい（請求項２）。
この場合には、金属層の静電遮蔽効果により、電極板の電界を遮蔽することができる。そのため、電極板に切欠部を形成したり、絶縁部材を設けたりする必要はなく、上記金属層が予め形成された制御回路基板を電極板上に取り付けるだけで、電磁ノイズを低減することが可能となる。 The control circuit board has a metal layer connected to the ground of the switching element, and the metal layer is interposed between the electrode plate and the electronic element on the control circuit board, thereby It is preferable that a means is provided (Claim 2 ).
In this case, the electric field of the electrode plate can be shielded by the electrostatic shielding effect of the metal layer. Therefore, it is not necessary to form a notch in the electrode plate or provide an insulating member, and electromagnetic noise can be reduced simply by mounting a control circuit board on which the metal layer is formed in advance on the electrode plate. It becomes.

また、上記スイッチング素子はバイポーラトランジスタであり、上記一対の電極板のうち一方の電極板は上記バイポーラトランジスタのコレクタ電極に接続され、他方の電極板はエミッタ電極およびグランドに接続されており、上記一対の電極板のうちコレクタ接続側の上記電極板に上記制御回路基板が設けられていることが好ましい（請求項３）。
コレクタ接続側の電極板は、スイッチング素子の動作に伴って電位が大きく変動し、電磁ノイズが発生しやすい。このコレクタ接続側の電極板に制御回路基板を設けた場合には、本発明の適用によって得られる効果、すなわち、遮蔽手段を設けて電磁ノイズを遮蔽する効果が特に大きい。 The switching element is a bipolar transistor, and one electrode plate of the pair of electrode plates is connected to a collector electrode of the bipolar transistor, and the other electrode plate is connected to an emitter electrode and a ground. it is preferable that the control circuit board to the electrode plate of the collector connection side of the electrode plate is provided (claim 3).
The electrode plate on the collector connection side greatly varies in potential with the operation of the switching element, and electromagnetic noise is likely to occur. When the control circuit board is provided on the electrode plate on the collector connection side, the effect obtained by applying the present invention, that is, the effect of shielding electromagnetic noise by providing shielding means is particularly great.

（参考例１）
本発明の参考例にかかる電力変換用半導体装置につき、図１〜図６を用いて説明する。
図１、図２に示すごとく、本発明の電力変換用半導体装置１は、所定間隔をおいて対向配置した一対の電極板２（２ａ，２ｂ）を備える。また、一対の電極板２に各々電気的に接続されたスイッチング素子３が、該一対の電極板２の間に設けられている。
さらに、スイッチング素子３を制御する制御回路が形成された制御回路基板４が、一対の電極板２の間に設けられている。
制御回路基板４は、一対の電極板２のいずれか一方に、電磁ノイズを遮蔽する遮蔽手段１０を介して取り付けられている。
以下、詳説する。 ( Reference Example 1)
A power conversion semiconductor device according to a reference example of the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the power conversion semiconductor device 1 of the present invention includes a pair of electrode plates 2 (2a, 2b) arranged to face each other at a predetermined interval. A switching element 3 electrically connected to the pair of electrode plates 2 is provided between the pair of electrode plates 2.
Further, a control circuit board 4 on which a control circuit for controlling the switching element 3 is formed is provided between the pair of electrode plates 2.
The control circuit board 4 is attached to either one of the pair of electrode plates 2 via shielding means 10 that shields electromagnetic noise.
The details will be described below.

図２に示すごとく、本例では、制御回路基板４と電極板２との間に絶縁部材６が設けられており、この絶縁部材６が遮蔽手段１０をなしている。
より詳しくは、一対の電極板２のいずれか一方に切欠部５が設けられ、切欠部５に絶縁部材６が取り付けらており、該絶縁部材６上に制御回路基板４が設けられている。 As shown in FIG. 2, in this example, an insulating member 6 is provided between the control circuit board 4 and the electrode plate 2, and the insulating member 6 constitutes a shielding means 10.
More specifically, a notch portion 5 is provided in one of the pair of electrode plates 2, an insulating member 6 is attached to the notch portion 5, and the control circuit board 4 is provided on the insulating member 6.

図２に示すごとく、スイッチング素子３は一方の電極板２ａ上に配置されている。また、スイッチング素子３は銅ブロック１４を介して他方の電極板２ｂに接続されている。銅ブロック１４により、電極板２ａ−２ｂ間の間隔を広げ、これにより、制御回路基板４とスイッチング素子３とを接続するワイヤ１５が電極板２ｂに接触することを防止している。
一方、電極板２ａ，２ｂはパワー端子１２，１３を有する。このパワー端子１２，１３間に電圧（図３参照）が印加される。また、電力変換用半導体装置１は制御端子１１を備えており、この制御端子１１は制御回路基板４に接続されている。 As shown in FIG. 2, the switching element 3 is disposed on one electrode plate 2a. Further, the switching element 3 is connected to the other electrode plate 2 b through the copper block 14. The copper block 14 increases the distance between the electrode plates 2a-2b, thereby preventing the wire 15 connecting the control circuit board 4 and the switching element 3 from coming into contact with the electrode plate 2b.
On the other hand, the electrode plates 2 a and 2 b have power terminals 12 and 13. A voltage (see FIG. 3) is applied between the power terminals 12 and 13. Further, the power conversion semiconductor device 1 includes a control terminal 11, and the control terminal 11 is connected to the control circuit board 4.

図３は、本例の電力変換用半導体装置１を用いたインバータ回路の一部である。同図に示すごとく、スイッチング素子３はバイポーラトランジスタ（ＩＧＢＴ素子）である。また、一対の電極板２のうち一方の電極板２ａはバイポーラトランジスタのコレクタ電極に接続され、他方の電極板２ｂはエミッタ電極およびグランドに接続されている。そして図２に示すごとく、一対の電極板２ａ，２ｂのうちコレクタ接続側の電極板２ａに制御回路基板４が設けられている。   FIG. 3 shows a part of an inverter circuit using the power conversion semiconductor device 1 of this example. As shown in the figure, the switching element 3 is a bipolar transistor (IGBT element). One electrode plate 2a of the pair of electrode plates 2 is connected to the collector electrode of the bipolar transistor, and the other electrode plate 2b is connected to the emitter electrode and the ground. And as shown in FIG. 2, the control circuit board 4 is provided in the electrode plate 2a by the side of a collector connection among a pair of electrode plates 2a and 2b.

図３に示すごとく、インバータ回路では、一方の電力変換用半導体装置１ａのエミッタ端子１３と、他方の電力変換用半導体装置１ｂのコレクタ端子１２とを接続している。そして、一方の電力変換用半導体装置１ａのコレクタ端子１２と、他方の電力変換用半導体装置１ｂのエミッタ端子１３との間に直流電圧を印加し、スイッチング素子１ａ，１ｂをスイッチング動作させて、交流出力端子１６から交流電圧を出力する。   As shown in FIG. 3, in the inverter circuit, the emitter terminal 13 of one power conversion semiconductor device 1a is connected to the collector terminal 12 of the other power conversion semiconductor device 1b. Then, a DC voltage is applied between the collector terminal 12 of one power conversion semiconductor device 1a and the emitter terminal 13 of the other power conversion semiconductor device 1b, and the switching elements 1a and 1b are switched to perform an alternating current. An AC voltage is output from the output terminal 16.

制御回路基板４は、図３に示すごとく、スイッチング素子３（ＩＧＢＴ素子）へゲート信号を入力するゲート駆動回路４１と、スイッチング素子３のエミッタに所定の値以上の電流が流れた場合にスイッチング素子３をオフする短絡保護回路４２、過電流保護回路４４を備える。短絡保護回路４２は図３に示すごとく、抵抗Ｒ１〜Ｒ５、コンデンサＣ１、オペアンプＯＰ、タイマ４３から構成される。   As shown in FIG. 3, the control circuit board 4 includes a gate drive circuit 41 that inputs a gate signal to the switching element 3 (IGBT element) and a switching element when a current of a predetermined value or more flows through the emitter of the switching element 3. 3 is provided with a short circuit protection circuit 42 and an overcurrent protection circuit 44 for turning off 3. As shown in FIG. 3, the short circuit protection circuit 42 includes resistors R1 to R5, a capacitor C1, an operational amplifier OP, and a timer 43.

なお、図１〜図３の電力変換用半導体装置１では、１個のスイッチング素子３のみを搭載しているが、図４に示すごとく、１個の電力変換用半導体装置１内に２個のスイッチング素子３ａ，３ｂを搭載してもよい。また、図４の例では、一方のスイッチング素子３ａ用のパワー端子１２ａ，１３ａと、他方のスイッチング素子３ｂ用のパワー端子１２ｂ、１３ｂとの、合計４個のパワー端子を設けてあるが、インバータ回路ではパワー端子１３ａと１２ｂとを接続するため（図３参照）、このパワー端子１３ａ，１２ｂを一体化してもよい。   1 to 3, only one switching element 3 is mounted. However, as shown in FIG. 4, two power conversion semiconductor devices 1 are provided in one power conversion semiconductor device 1. Switching elements 3a and 3b may be mounted. In the example of FIG. 4, a total of four power terminals are provided, that is, power terminals 12a and 13a for one switching element 3a and power terminals 12b and 13b for the other switching element 3b. In the circuit, the power terminals 13a and 12b may be integrated to connect the power terminals 13a and 12b (see FIG. 3).

なお、本例では図２に示すごとく切欠部５をテーパ状にしているが、図５に示すごとく断面四辺形状にしてもよい。また、図６に示すごとく、放熱部材２ａを小さく形成し、放熱部材２ａと制御回路基板４との間に存在する封止部材８を遮蔽手段１０として用いてもよい。   In this example, the notch 5 is tapered as shown in FIG. 2, but it may also be a quadrilateral cross section as shown in FIG. Further, as shown in FIG. 6, the heat radiating member 2 a may be formed small, and the sealing member 8 existing between the heat radiating member 2 a and the control circuit board 4 may be used as the shielding means 10.

次に、本例の作用効果について説明する。
本例によると、図２に示すごとく、一対の電極板２ａ，２ｂの間にスイッチング素子３と、制御回路基板４とを設けたので、従来のように電極板９１〜制御回路９７を順次積層した構造（図１２参照）と比較して、全体の厚さを薄くすることができ、かつ小型化できる。 Next, the function and effect of this example will be described.
According to this example, as shown in FIG. 2, since the switching element 3 and the control circuit board 4 are provided between the pair of electrode plates 2a and 2b, the electrode plates 91 to 97 are sequentially stacked as in the prior art. Compared to the structure (see FIG. 12), the overall thickness can be reduced and the size can be reduced.

また、上記構成を採用すると、電磁ノイズを放射する電極板２と、制御回路基板４とが接近することになるが、本例では遮蔽手段１０を設けたため、制御回路基板４が電磁ノイズの影響を受けにくい。
遮蔽手段１０としては、制御回路基板４と電極板２との間に絶縁部材を設けたり、隙間（空間）をおいたりすることができる。例えば、遮蔽手段１０として絶縁部材を設けることにより、電極板２と制御回路基板４との間の間隔を広げて浮遊容量Ｃａ（図３参照）を低減することができ、電極板２から放射される電磁ノイズを遮蔽することができる。これにより、制御回路基板４の誤動作を防止できる。 Further, when the above configuration is adopted, the electrode plate 2 that radiates electromagnetic noise and the control circuit board 4 come close to each other. However, in this example, since the shielding means 10 is provided, the control circuit board 4 is affected by the electromagnetic noise. It is hard to receive.
As the shielding means 10, an insulating member can be provided between the control circuit board 4 and the electrode plate 2, or a gap (space) can be provided. For example, by providing an insulating member as the shielding means 10, the space between the electrode plate 2 and the control circuit board 4 can be widened to reduce the stray capacitance Ca (see FIG. 3). Can shield electromagnetic noise. Thereby, malfunction of the control circuit board 4 can be prevented.

また、本例では図２に示すごとく、制御回路基板４と電極板２との間に絶縁部材６が設けられており、絶縁部材６が遮蔽手段１０をなしている。
この場合には、絶縁部材６によって、電極板２と制御回路基板４との間の絶縁性を高めることができる。また、絶縁部材６を厚くすることにより、電極板２から発生した電磁ノイズを効果的に遮蔽できる。 In this example, as shown in FIG. 2, an insulating member 6 is provided between the control circuit board 4 and the electrode plate 2, and the insulating member 6 constitutes a shielding means 10.
In this case, the insulating member 6 can enhance the insulation between the electrode plate 2 and the control circuit board 4. Further, by making the insulating member 6 thick, electromagnetic noise generated from the electrode plate 2 can be effectively shielded.

また、本例では図２に示すごとく、一対の電極板２のいずれか一方に切欠部５が設けられ、切欠部５に絶縁部材６が取り付けらており、絶縁部材６上に制御回路基板４が設けられている。
このように切欠部５を形成すると、電力変換用半導体装置１の厚みを大きくすることなく絶縁部材６を厚く形成することができる。これにより、電極板２から照射される電磁ノイズを効果的に遮断できるとともに、電力変換用半導体装置１を小型化できる。 In this example, as shown in FIG. 2, a notch portion 5 is provided in one of the pair of electrode plates 2, and an insulating member 6 is attached to the notch portion 5, and the control circuit board 4 is provided on the insulating member 6. Is provided.
When the notch 5 is formed in this way, the insulating member 6 can be formed thick without increasing the thickness of the power conversion semiconductor device 1. Thereby, the electromagnetic noise irradiated from the electrode plate 2 can be effectively cut off, and the power conversion semiconductor device 1 can be downsized.

また、本例では図２、図３に示すごとく、一方の電極板２ａはスイッチング素子３のコレクタ端子に接続され、他方の電極板２ｂはエミッタ端子及びグランドに接続され、制御回路基板４は、コレクタ接続側の電極板２ａに設けられている。
コレクタ接続側の電極板２ａは、スイッチング素子３の動作に伴って電位が大きく変動し、電磁ノイズが発生しやすい。このコレクタ接続側の電極板２ａに制御回路基板４を設けた場合には、本発明の適用によって得られる効果、すなわち、遮蔽手段１０を設けて電磁ノイズを遮蔽する効果が特に大きい。 In this example, as shown in FIGS. 2 and 3, one electrode plate 2a is connected to the collector terminal of the switching element 3, the other electrode plate 2b is connected to the emitter terminal and the ground, and the control circuit board 4 is It is provided on the electrode plate 2a on the collector connection side.
The potential at the collector connection side electrode plate 2a greatly varies with the operation of the switching element 3, and electromagnetic noise is likely to occur. When the control circuit board 4 is provided on the electrode plate 2a on the collector connection side, the effect obtained by applying the present invention, that is, the effect of shielding the electromagnetic noise by providing the shielding means 10 is particularly great.

すなわち、図３に示すごとく、制御回路基板４を構成する抵抗ＲやコンデンサＣ等の素子はグランドに接続されているが、制御回路基板４自体はコレクタと同電位の電極板２ａ上に配置されている（図２参照）。そのため、素子Ｒ，Ｃは電極板２ａとの電位差が大きい。
ここで仮に、絶縁部材６（遮蔽手段１０）を設けなかったとすると、制御回路基板４と電極板２ａとの間隔が狭くなり、浮遊容量Ｃａ０〜Ｃａ３が大きくなる。そのため、電極板２ａの電位変動に伴って生じた電磁ノイズが素子Ｒ，Ｃに入りやすくなる。
従って、本発明のように絶縁部材６（遮蔽手段１０）を設け、電極板２ａと制御回路基板４との間隔を広げて浮遊容量Ｃａ〜Ｃａ３を小さくすれば、電極板２ａから放射される電磁ノイズを遮蔽でき、制御回路基板４の誤動作等を効果的に防止できる。 That is, as shown in FIG. 3, the elements such as the resistor R and the capacitor C constituting the control circuit board 4 are connected to the ground, but the control circuit board 4 itself is disposed on the electrode plate 2a having the same potential as the collector. (See FIG. 2). Therefore, the elements R and C have a large potential difference from the electrode plate 2a.
If the insulating member 6 (shielding means 10) is not provided here, the distance between the control circuit board 4 and the electrode plate 2a is narrowed, and the stray capacitances Ca0 to Ca3 are increased. Therefore, the electromagnetic noise generated due to the potential fluctuation of the electrode plate 2a is likely to enter the elements R and C.
Therefore, if the insulating member 6 (shielding means 10) is provided as in the present invention and the space between the electrode plate 2a and the control circuit board 4 is widened to reduce the stray capacitances Ca to Ca3, the electromagnetic waves radiated from the electrode plate 2a. Noise can be shielded, and malfunction of the control circuit board 4 can be effectively prevented.

以上のごとく、本発明によると、より小型化でき、耐ノイズ性能に優れた電力変換用半導体装置１を提供することができる。   As described above, according to the present invention, it is possible to provide the power conversion semiconductor device 1 that can be further downsized and has excellent noise resistance.

（参考例２）
本例は、遮蔽手段１０の構成を変更した例である。図７、図８に示すごとく、本例の制御回路基板４は、スイッチング素子３のグランドに接続された金属層４５を有し、該金属層４５は電極板２ａと制御回路基板４上の電子素子４６との間に介在することによって、遮蔽手段１０をなしている。
すなわち、本例の制御回路基板４は多層プリント配線基板からなり、この多層プリント配線基板を構成する複数の導電層４０の中に、少なくとも上記電子素子４６が搭載された領域全体にわたって膜状、あるいはメッシュ状に形成された金属層４５が形成されている。この金属層４５はグランドに接続されている。
その他、参考例１と同様の構成を備える。 ( Reference Example 2)
In this example, the configuration of the shielding means 10 is changed. As shown in FIGS. 7 and 8, the control circuit board 4 of the present example has a metal layer 45 connected to the ground of the switching element 3, and the metal layer 45 is an electron on the electrode plate 2 a and the control circuit board 4. By being interposed between the element 46, the shielding means 10 is formed.
That is, the control circuit board 4 of the present example is formed of a multilayer printed wiring board, and in the plurality of conductive layers 40 constituting the multilayer printed wiring board, at least the entire area where the electronic element 46 is mounted, or A metal layer 45 formed in a mesh shape is formed. This metal layer 45 is connected to the ground.
In addition, the same configuration as the reference example 1 is provided.

参考例２の作用効果につき説明する。上記構成にすると、金属層４５の静電遮蔽効果により、電極板２ａの電界を遮蔽することができる。そのため、電極板２ａに切欠部を形成したり、絶縁部材を設けたりする必要はなく、金属層４５が予め形成された制御回路基板４を電極板２ａ上に取り付けるだけで、電磁ノイズを低減することが可能となる。
その他、参考例１と同様の作用効果を有する。 The effect of the reference example 2 will be described. With the above configuration, the electric field of the electrode plate 2 a can be shielded by the electrostatic shielding effect of the metal layer 45. Therefore, it is not necessary to form a notch in the electrode plate 2a or provide an insulating member, and electromagnetic noise can be reduced simply by mounting the control circuit board 4 on which the metal layer 45 is formed in advance on the electrode plate 2a. It becomes possible.
In addition, the same effects as those of Reference Example 1 are obtained.

（実施例１）
本例は、遮蔽手段１０の構成を変更した例である。図９に示すごとく、本例の電力変換用半導体装置１は、電極板２に溝部７が形成され、溝部７内には絶縁部材６が設けられておらず、溝部７上に制御回路基板４が配置されており、溝部７内の空間Ｓが遮蔽手段１０をなしている。
この場合には、溝部７内に絶縁部材６を設ける必要がないため、製造工程を簡単にすることができる。また、溝部７を深く形成するだけで、浮遊容量Ｃａを簡単に減らすことができ、電磁ノイズを低減できる。
その他、参考例１と同様の構成および作用効果を備える。 (Example 1 )
In this example, the configuration of the shielding means 10 is changed. As shown in FIG. 9, in the power conversion semiconductor device 1 of this example, the groove portion 7 is formed in the electrode plate 2, the insulating member 6 is not provided in the groove portion 7, and the control circuit board 4 is formed on the groove portion 7. Is arranged, and the space S in the groove portion 7 constitutes the shielding means 10.
In this case, since it is not necessary to provide the insulating member 6 in the groove portion 7, the manufacturing process can be simplified. Further, the stray capacitance Ca can be easily reduced by simply forming the groove 7 deeply, and electromagnetic noise can be reduced.
In addition, the configuration and operational effects similar to those of Reference Example 1 are provided.

（参考例３）
本例は、遮蔽手段１０の構成を変更した例である。図１０、図１１に示すごとく、本例では制御回路基板４をエミッタ接続側の電極板２ｂに取り付けている。そしてコレクタ接続側の電極板２ａに、制御回路基板４よりも面積が小さい小型絶縁部材６０と小型金属部材４７を積層形成し、小型金属部材４７と制御回路基板４を配線４８で接続した。また、小型金属部材４７とスイッチング素子３とをワイヤ１５で接続した。
その他、参考例１と同様の構成を備える。 ( Reference Example 3 )
In this example, the configuration of the shielding means 10 is changed. As shown in FIGS. 10 and 11, in this example, the control circuit board 4 is attached to the electrode plate 2b on the emitter connection side. Then, a small insulating member 60 and a small metal member 47 having an area smaller than that of the control circuit board 4 are laminated on the collector connection side electrode plate 2 a, and the small metal member 47 and the control circuit board 4 are connected by a wiring 48. Further, the small metal member 47 and the switching element 3 were connected by the wire 15.
In addition, the same configuration as the reference example 1 is provided.

参考例３の作用効果につき説明する。本例では、エミッタおよびグランドに接続された電極板２ｂに制御回路基板４を取り付けたので、制御回路基板４をコレクタ接続側の電極板２ａから離して配置することができる。これにより、電極板２ａから発生する電磁ノイズの影響を、制御回路基板４が受けにくくなる。
また、エミッタ接続側の電極板２ｂに制御回路基板４を取り付けた場合、この制御回路基板４とスイッチング素子３とを直接、ワイヤ１５で接続するのは比較的困難であるが、図１１に示すごとくコレクタ接続側の電極板２ａの近傍に小型金属部材４７を設けることにより、この小型金属部材４７とスイッチング素子３とを簡単にワイヤボンディングできる。
その他、参考例１と同様の作用効果を有する。 The effects of Reference Example 3 will be described. In this example, since the control circuit board 4 is attached to the electrode plate 2b connected to the emitter and the ground, the control circuit board 4 can be arranged away from the collector connection side electrode plate 2a. Thereby, it becomes difficult for the control circuit board 4 to receive the influence of the electromagnetic noise generated from the electrode plate 2a.
Further, when the control circuit board 4 is attached to the electrode plate 2b on the emitter connection side, it is relatively difficult to directly connect the control circuit board 4 and the switching element 3 with the wire 15 as shown in FIG. Thus, by providing the small metal member 47 in the vicinity of the electrode plate 2a on the collector connection side, the small metal member 47 and the switching element 3 can be easily wire-bonded.
In addition, the same effects as those of Reference Example 1 are obtained.

１ 電力変換用半導体装置
１０ 遮蔽手段
２ａ，２ｂ 電極板
３ スイッチング素子
４ 制御回路基板
５ 切欠部
６ 絶縁部材
７ 溝部
８ 封止部材 DESCRIPTION OF SYMBOLS 1 Semiconductor device for power conversion 10 Shielding means 2a, 2b Electrode plate 3 Switching element 4 Control circuit board 5 Notch part 6 Insulation member 7 Groove part 8 Sealing member

Claims (3)

所定間隔をおいて対向配置した一対の電極板と、
上記一対の電極板の間に設けられ、該一対の電極板に各々電気的に接続されたスイッチング素子と、
上記一対の電極板の間に設けられ、上記スイッチング素子を制御する制御回路が形成された制御回路基板とを備え、
上記制御回路基板は、上記一対の電極板のいずれか一方に、電磁ノイズを遮蔽する遮蔽手段を介して取り付けられ、
上記電極板に溝部が形成され、該溝部内には絶縁部材が設けられておらず、該溝部上に上記制御回路基板が配置されており、該溝部内の空間が上記遮蔽手段をなしていることを特徴とする電力変換用半導体装置。 A pair of electrode plates opposed to each other at a predetermined interval;
A switching element provided between the pair of electrode plates and electrically connected to the pair of electrode plates,
A control circuit board provided between the pair of electrode plates and formed with a control circuit for controlling the switching element;
The control circuit board is attached to any one of the pair of electrode plates via shielding means for shielding electromagnetic noise ,
A groove is formed in the electrode plate, no insulating member is provided in the groove, the control circuit board is disposed on the groove, and the space in the groove serves as the shielding means . A power conversion semiconductor device. 請求項１において、上記制御回路基板は、上記スイッチング素子のグランドに接続された金属層を有し、該金属層は上記電極板と上記制御回路基板上の電子素子との間に介在することによって、上記遮蔽手段をなしていることを特徴とする電力変換用半導体装置。 Oite to claim 1, said control circuit board has a connection metal layer to the ground of the switching element, the metal layer is interposed between the electrode plate and the control circuit the electronic devices on the substrate Accordingly, the power conversion semiconductor device is characterized by forming the shielding means. 請求項１または請求項２において、上記スイッチング素子はバイポーラトランジスタであり、上記一対の電極板のうち一方の電極板は上記バイポーラトランジスタのコレクタ電極に接続され、他方の電極板はエミッタ電極およびグランドに接続されており、上記一対の電極板のうちコレクタ接続側の上記電極板に上記制御回路基板が設けられていることを特徴とする電力変換用半導体装置。 3. The switching element according to claim 1, wherein the switching element is a bipolar transistor, one electrode plate of the pair of electrode plates is connected to a collector electrode of the bipolar transistor, and the other electrode plate is connected to an emitter electrode and a ground. A power conversion semiconductor device, wherein the control circuit board is provided on the electrode plate on the collector connection side of the pair of electrode plates.
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