JP5279424B2 - High frequency transmission equipment - Google Patents

High frequency transmission equipment Download PDF

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JP5279424B2
JP5279424B2 JP2008234729A JP2008234729A JP5279424B2 JP 5279424 B2 JP5279424 B2 JP 5279424B2 JP 2008234729 A JP2008234729 A JP 2008234729A JP 2008234729 A JP2008234729 A JP 2008234729A JP 5279424 B2 JP5279424 B2 JP 5279424B2
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frequency
mounting
ground electrode
module substrate
back surface
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JP2010068405A (en
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和夫 及川
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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本発明は高周波伝送装置、特にマイクロ波帯からミリ波帯の高周波の信号処理に用いられる各種の高周波モジュール基板等を実装基板に取り付ける構成で、高周波信号を伝送するための高周波伝送装置の構造に関する。   The present invention relates to a high-frequency transmission device, and more particularly, to a structure of a high-frequency transmission device for transmitting a high-frequency signal in a configuration in which various high-frequency module substrates used for high-frequency signal processing from a microwave band to a millimeter wave band are attached to a mounting substrate. .

従来から、マイクロ波帯からミリ波帯の信号を取り扱う高周波伝送装置では、各種の高周波モジュール(デバイス)を搭載した回路基板を、もう一つの実装回路基板に実装することが行われ、高周波信号はモジュールと実装回路基板との間で伝送される。   Conventionally, in a high-frequency transmission apparatus that handles signals from the microwave band to the millimeter wave band, a circuit board on which various high-frequency modules (devices) are mounted is mounted on another mounting circuit board, It is transmitted between the module and the mounting circuit board.

図10には、従来の伝送装置の1つの構成例が示されており、モジュールは、キャビティ21を有するシールド筐体22、表面(上面)に伝送線路23が形成され、かつ裏面にこの伝送線路23がスルーホール24を介して接続される接続用電極25及び接地パターン(接地電極)26が形成されたモジュール基板27を有し、実装部は、表面に伝送線路29及び接地パターン30が形成され、かつ裏面にこの接地パターン30がスルーホール31を介して接続される接地パターン32を形成した実装基板33、この実装基板33の裏面側の金属筐体34を有している。そして、上記のモジュール基板27と実装基板33を半田35等で接着することで、モジュールと実装部の接地パターン26と接地パターン30が接続されると共に、伝送線路23の接続用電極25と伝送線路29が接続される。なお、36はモジュール基板27上面の接地パターンである。   FIG. 10 shows one configuration example of a conventional transmission apparatus. The module has a shield housing 22 having a cavity 21, a transmission line 23 formed on the front surface (upper surface), and the transmission line on the rear surface. 23 includes a module substrate 27 on which a connection electrode 25 and a ground pattern (ground electrode) 26 connected to each other through a through hole 24 are formed, and a transmission line 29 and a ground pattern 30 are formed on the mounting portion on the surface. In addition, a mounting substrate 33 on which a ground pattern 32 to which the ground pattern 30 is connected via a through hole 31 is formed on the back surface, and a metal casing 34 on the back surface side of the mounting substrate 33 is provided. Then, the module substrate 27 and the mounting substrate 33 are bonded with the solder 35 or the like so that the ground pattern 26 and the ground pattern 30 of the module and the mounting portion are connected, and the connection electrode 25 and the transmission line of the transmission line 23 are connected. 29 is connected. Reference numeral 36 denotes a ground pattern on the upper surface of the module substrate 27.

図11には、従来の伝送装置の他の構成例(タブリードを用いた例)が示されており、この場合は、モジュール基板27の裏面に、タブリード38を設け、このタブリード38と伝送線路29やタブリード38とスルーホール31等を半田35で接続している。
そして、このような伝送装置では、接続部全体として不整合が生じないように、その寸法を最適化したり、インピーダンス補正用の回路を追加したりすることが行われる。
特開2004−214584号公報
FIG. 11 shows another configuration example of the conventional transmission apparatus (example using a tab lead). In this case, a tab lead 38 is provided on the back surface of the module substrate 27, and the tab lead 38 and the transmission line 29 are provided. The tab lead 38 and the through hole 31 are connected by solder 35.
In such a transmission apparatus, the dimensions are optimized or an impedance correction circuit is added so that mismatching does not occur in the entire connection portion.
JP 2004-214584 A

しかしながら、従来の高周波伝送装置では、取扱う周波数が高くなり、使用される基板(27,33)が薄くなると、モジュール基板27と実装基板33の伝送線路23,29同士を接続するための電極の幅は細くなり、接続電極同士の位置合わせが困難になるという問題があった。   However, in the conventional high-frequency transmission device, when the frequency to be handled increases and the substrates (27, 33) to be used become thin, the width of the electrodes for connecting the transmission lines 23, 29 of the module substrate 27 and the mounting substrate 33 to each other. There is a problem that it becomes thin and it becomes difficult to align the connection electrodes.

例えば、FET、MMIC等のデバイスを内蔵したパッケージの場合には、図10のような構造でも、半田リフロー実装等により高精度で安定した実装が可能なため、上記のような電極の小型化に対応できるが、内部に複数の回路を含む高周波モジュールとして構成する場合は、半田リフローによる実装は困難な場合が多く、一般的には高価な高周波コネクタや同軸ケーブルを介して接続する方法が採られている。   For example, in the case of a package incorporating a device such as FET, MMIC, etc., even with the structure shown in FIG. 10, high precision and stable mounting is possible by solder reflow mounting. However, when it is configured as a high-frequency module including a plurality of circuits inside, mounting by solder reflow is often difficult, and generally a method of connecting via an expensive high-frequency connector or coaxial cable is adopted. ing.

また、モジュール自体をネジで固定し、電極接続部のみ、半田こてやレーザによるスポット半田接続を行う方法もあるが、この場合でも、図11に示すようなタブリード(金属板)やスルーホールを半分にカットした半田付け用電極を用い、接合部に直接熱を与え、半田フィレットが形成できる構造としなければ、実装が困難である。   Also, there is a method in which the module itself is fixed with screws, and only the electrode connection portion is connected by spot soldering using a soldering iron or laser, but even in this case, a tab lead (metal plate) or through hole as shown in FIG. Mounting is difficult unless the soldering electrode cut in half is used to directly apply heat to the joint to form a solder fillet.

また、高周波回路をモジュール化する目的の一つは、周波数特性が広帯域な回路を共通化し、発振器等を含む狭帯域な回路部分をモジュール化回路として交換可能にすることであり、このモジュールの交換により異なった周波数の製品が製作できるが、このような場合も、モジュールと実装部との接続が高価な高周波コネクタや同軸ケーブルで行われることが多い。   In addition, one of the purposes of modularizing high-frequency circuits is to share a circuit with a wide frequency characteristic so that a narrow-band circuit part including an oscillator can be replaced as a modular circuit. However, even in such a case, the connection between the module and the mounting part is often made with an expensive high-frequency connector or coaxial cable.

本発明は上記問題点に鑑みてなされたものであり、その目的は、各種の高周波モジュール基板を実装高周波回路基板に接続する際の伝送線路の接続電極同士の位置合わせが容易となり、また半田付けや高価なコネクタ等を用いずに、基板の伝送線路同士を接続し、安定した伝送を行うことができる高周波伝送装置を提供することにある。 The present invention has been made in view of the above problems, and its purpose is to facilitate the alignment of connection electrodes of transmission lines when connecting various high-frequency module substrates to a mounted high-frequency circuit substrate, and soldering. Another object of the present invention is to provide a high-frequency transmission device that can perform stable transmission by connecting transmission lines of each substrate without using expensive connectors or the like.

上記目的を達成するために、請求項1の発明に係る発明は、高周波伝送線路及び接地電極が形成された複数の基板を積層配置する高周波伝送装置において、表面に、接地電極の空領域が形成され、かつこの空領域内に上記伝送線路の先端開放パターンが形成され、裏面に、上記表面空領域と略一致する位置に接地電極の空領域が形成された高周波モジュール基板と、表面に、接地電極の空領域が形成され、かつこの空領域内に上記伝送線路の先端開放パターンが形成され、裏面に、接地電極が形成された実装高周波回路基板と、上記高周波モジュール基板の裏面接地電極と上記実装高周波回路基板の表面接地電極を接続し、かつそれぞれの空領域が合わせられる状態で上記高周波モジュール基板実装高周波回路基板を直接重ねることにより、それぞれの伝送線路の先端開放パターンを直流的に絶縁しながら容量性結合する容量結合部が形成された直列共振回路と、この直列共振回路に設けられたインピーダンス整合部と、を含み、上記直列共振回路により高周波を伝送することを特徴とする。
請求項2の発明は、上記容量結合部として、上記実装高周波回路基板の裏面にも、その表面空領域と略一致する位置に接地電極の空領域を設けると共に、この実装高周波回路基板の裏面側に配置される金属筐体には、上記裏面空領域と略同一の面積の掘り込み穴を設け、上記高周波モジュール基板の裏面空領域に、この裏面の接地電極の厚さと同一か又はそれ以上の厚さの誘電体シートを設けたことを特徴とする
To achieve the above object, the invention according to a first aspect of the invention, the high frequency transmission apparatus for stacked multiple substrates high-frequency transmission line and the ground electrode are formed, on the front surface, an empty area of the ground electrode is formed, and the open-end pattern of the transmission line to an empty area is formed on the back surface, a high frequency module board empty area of the ground electrode at a position substantially coincident with the said surface sky area is formed, on the front surface A mounting high-frequency circuit board in which an empty area of the ground electrode is formed, and an open end pattern of the transmission line is formed in the empty area, and a ground electrode is formed on the back surface, and a back-surface ground electrode of the high-frequency module board by superimposing the mounting high-frequency circuit is connected to the surface ground electrode of the substrate, and a mounting high-frequency circuit board with the RF module substrate directly in a state to match the respective empty area and A series resonant circuit formed with a capacitive coupling portion that capacitively couples the open-circuit patterns of the respective transmission lines while being DC-insulated, and an impedance matching unit provided in the series resonant circuit, the series resonance A high frequency is transmitted by a circuit.
According to a second aspect of the invention, said as a capacitive coupling portion, on the back surface of the mounting a high-frequency circuit board, provided with a free area of the ground electrode at a position substantially coincident with the surface thereof free space, the rear surface side of the mounting high-frequency circuit board The metal casing disposed in the upper surface is provided with a digging hole having substantially the same area as the back surface empty area, and the back surface empty area of the high-frequency module substrate has a thickness equal to or greater than the thickness of the ground electrode on the back surface. A dielectric sheet having a thickness is provided.

請求項3の発明は、上記高周波モジュール基板の表面側に配置されるシールド筐体には、上記表面空領域と略同一の面積のキャビティが設けられていることを特徴とする。 The invention according to claim 3 is characterized in that a cavity having substantially the same area as that of the surface empty region is provided in the shield casing disposed on the surface side of the high-frequency module substrate.

本発明の構成によれば、高周波モジュール基板−実装高周波回路基板間のそれぞれの接地電極が直接接続され、またそれぞれの伝送線路については、その先端開放パターン間の結合容量と、伝送線路と先端開放パターン間のインピーダンス整合部により、直列共振回路が形成されることになり、この直列共振回路によって、高周波モジュール基板及び実装高周波回路基板に配置されている伝送線路間で高周波の伝送が行われる。 According to the configuration of the present invention, the respective ground electrodes are directly connected between the high- frequency module substrate and the mounted high-frequency circuit substrate, and for each transmission line, the coupling capacitance between the open end patterns, the transmission line, and the open end A series resonance circuit is formed by the impedance matching portion between the patterns, and high- frequency transmission is performed between the transmission lines arranged on the high- frequency module substrate and the mounting high-frequency circuit substrate by the series resonance circuit.

本発明の高周波伝送装置によれば、伝送線路が容量性結合で接続されるので、複数基板の伝送線路の接続電極同士の位置合わせが容易となり、また半田付けや高価なコネクタ等を用いることなく、複数基板の伝送線路同士を接続し、安定した伝送を行うことができ、接続の容易化、低コスト化を図ることも可能になるという効果がある。   According to the high-frequency transmission device of the present invention, since the transmission lines are connected by capacitive coupling, it is easy to align the connection electrodes of the transmission lines of a plurality of substrates, and without using soldering or expensive connectors. In addition, there is an effect that transmission lines of a plurality of substrates can be connected to each other to perform stable transmission, and the connection can be facilitated and the cost can be reduced.

請求項2の発明によれば、実装高周波回路基板の裏面側に配置される金属筐体に掘り込み穴を設けたので、先端開放パターンの接地容量による特性の劣化を防ぎ、広帯域な伝送特性が得られるという効果を奏する。
また、高周波モジュール基板の裏面における接地パターンが形成されていない容量結合部の空領域に、誘電体シートを設けたので、容量結合部における高周波モジュール基板と実装高周波回路基板との間に存在する空隙による伝送特性の劣化を改善することができるという効果を奏する。
According to the invention of claim 2, since the digging hole is provided in the metal casing disposed on the back surface side of the mounting high-frequency circuit board, the deterioration of the characteristics due to the ground capacity of the open-ended pattern is prevented, and the broadband transmission characteristics are obtained. The effect is obtained.
Further, the free area of the capacitive coupling portion to which a ground pattern in the back surface of the RF module substrate is not formed, is provided with the dielectric sheet, the gap that exists between the high frequency module board and the mounting a high-frequency circuit board in the capacitive coupling portion As a result, it is possible to improve the deterioration of the transmission characteristics due to.

図1乃至図4には、本発明の実施例に係る高周波伝送装置の構成が示されており、図1は上部のシールド筐体を透視した状態の図、図2及び図3は分解図、図4は断面図である。各図に示されるように、実施例の伝送装置は、各種のモジュールを実装部に接続するものであり、モジュールは、結合部キャビティ1を有する金属製のシールド筐体2、表面(上面)に伝送線路3、その先端開放パターン3a及び接地パターン(接地電極)4が形成され、かつ裏面(下面)に接地パターン5が形成されたモジュール基板7を有し、実装部は、表面に伝送線路9、その先端開放パターン9a及び接地パターン10が形成され、かつ裏面にこの接地パターン10がスルーホール11を介して接続される接地パターン12を形成した実装基板13、そして金属筐体14を有している。   1 to 4 show a configuration of a high-frequency transmission device according to an embodiment of the present invention. FIG. 1 is a perspective view of an upper shield housing, and FIGS. 2 and 3 are exploded views. FIG. 4 is a sectional view. As shown in each figure, the transmission device of the embodiment connects various modules to the mounting part, and the module is formed on a metal shield housing 2 having a coupling part cavity 1 on the surface (upper surface). The transmission line 3 has a module substrate 7 on which a tip opening pattern 3a and a ground pattern (ground electrode) 4 are formed, and a ground pattern 5 is formed on the back surface (lower surface). A mounting substrate 13 having a tip opening pattern 9a and a grounding pattern 10 formed thereon, and a grounding pattern 12 to which the grounding pattern 10 is connected via a through hole 11 on the back surface, and a metal casing 14. Yes.

上記モジュール基板7及び実装基板13の伝送線路3,9は、マイクロストリップ線路又はグラウンデッドコプレナーウェーブガイド等による伝送線路パターンで構成される。また、モジュール基板7では、その上面の接地パターン4が、高周波回路部を囲むように設けられると共に、伝送線路3の先端開放パターン3aを配置した容量性結合部を構成するための接地パターン空領域(即ち、先端開放パターン3aを囲む接地パターンが設けられない矩形の欠損部)4Cを残して形成され、裏面の接地パターン5においても、容量性結合部を構成するための空領域(上記4Cと略一致する領域)5Cを残して形成される。上記シールド筐体2は、高周波回路部をカバーする形状とされ、モジュール基板7の上面の接地パターン4と電気的に接触するように配置され、高周波回路を電気的に遮蔽して保護する役目をする。   The transmission lines 3 and 9 of the module substrate 7 and the mounting substrate 13 are configured by a transmission line pattern such as a microstrip line or a grounded coplanar waveguide. Further, in the module substrate 7, the ground pattern 4 on the upper surface is provided so as to surround the high-frequency circuit unit, and the ground pattern empty region for configuring the capacitive coupling unit in which the open end pattern 3 a of the transmission line 3 is arranged. (In other words, a rectangular missing portion where no ground pattern surrounding the tip opening pattern 3a is provided) 4C is left, and the ground pattern 5 on the back surface is also formed with an empty region for forming a capacitive coupling portion (the above-mentioned 4C and (A substantially matching region) 5C is formed leaving. The shield housing 2 has a shape that covers the high-frequency circuit unit, is disposed so as to be in electrical contact with the ground pattern 4 on the upper surface of the module substrate 7, and serves to electrically shield and protect the high-frequency circuit. To do.

また、実装基板13では、その上面の伝送線路9の先端開放パターン9aが上記モジュール基板7の先端開放パターン3aに基板基材を挟んで対向する位置に形成されると共に、接地パターン10は、上記空領域4C,5Cと略一致する空領域10Cを残して形成され、裏面の接地パターン12においても、上記空領域10Cと略同一の大きさで、容量性結合部を構成するための空領域(上記4Cと略一致する領域)12Cを残して形成される。   In the mounting substrate 13, the open end pattern 9 a of the transmission line 9 on the upper surface is formed at a position facing the open end pattern 3 a of the module substrate 7 with the substrate base material interposed therebetween, and the ground pattern 10 is An empty region 10C that is substantially the same as the empty region 4C and 5C is left, and the ground pattern 12 on the back surface is substantially the same size as the empty region 10C and is used to form a capacitive coupling portion ( (A region substantially coincident with the above 4C) is formed leaving 12C.

更に、実装基板13の下側の金属筐体14には、上記空領域12Cと略同一の面積の掘り込み穴14Dが設けられており、この掘り込み穴14Dは、上記空領域10Cと協働して先端開放パターン3a,9aの接地容量による特性の劣化を防ぐ役目をする。   Further, the metal casing 14 on the lower side of the mounting substrate 13 is provided with a digging hole 14D having substantially the same area as the empty area 12C. The digging hole 14D cooperates with the empty area 10C. Thus, it serves to prevent the deterioration of the characteristics due to the ground capacitance of the open end patterns 3a, 9a.

また、実施例では、上記モジュール基板7の裏面の接地パターン空領域5Cに、この接地パターン5に重ならないように、空領域5Cより少し小さい形状で、接地パターン5の厚さと同一か又はそれ以上の厚さの誘電体シート16が設けられている。この誘電体シート16は、例えばソルダーレジスト等を用いて形成することができ、空領域5Cに存在する空隙で生じる伝送特性の劣化を改善する役目をする。   Further, in the embodiment, the ground pattern empty region 5C on the back surface of the module substrate 7 has a shape slightly smaller than the empty region 5C so as not to overlap the ground pattern 5, and is equal to or more than the thickness of the ground pattern 5. A dielectric sheet 16 having a thickness of 1 mm is provided. The dielectric sheet 16 can be formed by using, for example, a solder resist or the like, and serves to improve the deterioration of the transmission characteristics caused by the gaps existing in the empty area 5C.

このような構成のモジュール基板7と実装基板13は、各図に示されるように、先端開放パターン3aと9aがモジュール基板7及び誘電体シート16を挟んで対向し、空領域4C,5C,10C,12C及び掘り込み部14Dが縦方向に並べられる状態で、各部材2,7,13,14が重ねて配置され、シールド筐体2の下面とモジュール基板7の上面の接地パターン4との間、モジュール基板7の裏面の接地パターン5と実装基板13の上面の接地パターン10との間、及び実装基板13の裏面の接地パターン12と金属筐体14との間は、機械的接触又は半田や導電性の接着剤等により電気的に接続される。従って、伝送線路3と9は、先端開放パターン3aと9aがモジュール基板7及び誘電体シート16を挟んで重なることで、直流的に絶縁された状態で容量性結合にて接続される。   As shown in each figure, the module substrate 7 and the mounting substrate 13 having such a configuration are such that the open end patterns 3a and 9a face each other with the module substrate 7 and the dielectric sheet 16 interposed therebetween, and the empty regions 4C, 5C, and 10C. 12C and the digging portion 14D are arranged in the vertical direction, and the members 2, 7, 13, and 14 are arranged to overlap each other, and between the lower surface of the shield housing 2 and the ground pattern 4 on the upper surface of the module substrate 7. Between the ground pattern 5 on the back surface of the module substrate 7 and the ground pattern 10 on the top surface of the mounting substrate 13, and between the ground pattern 12 on the back surface of the mounting substrate 13 and the metal housing 14, mechanical contact or solder or It is electrically connected by a conductive adhesive or the like. Accordingly, the transmission lines 3 and 9 are connected by capacitive coupling in a state where they are insulated in a direct current manner, with the open end patterns 3a and 9a overlapping with the module substrate 7 and the dielectric sheet 16 interposed therebetween.

更に、上記伝送線路3と先端開放パターン3aとの間、上記伝送線路9と先端開放パターン9aとの間には、線路幅を変えた(小さくした)構成のマッチング素子(整合素子)MP1とMP2が設けられている。   Further, matching elements (matching elements) MP1 and MP2 having a configuration in which the line width is changed (reduced) between the transmission line 3 and the open end pattern 3a and between the transmission line 9 and the open end pattern 9a. Is provided.

実施例は以上の構成からなり、実施例の高周波伝送装置では、モジュール基板7の上面の伝送線路3の先端開放パターン3aと実装基板13の上面の伝送線路9の先端開放パターン9aとの間の容量成分と各々のパターン3a,9aのインダクタンス成分及びマッチング素子MP1とMP2により、直列共振回路が形成され、この直列共振回路によって信号が伝送される。   The embodiment has the above-described configuration. In the high-frequency transmission device according to the embodiment, the gap between the open end pattern 3a of the transmission line 3 on the upper surface of the module substrate 7 and the open end pattern 9a of the transmission line 9 on the upper surface of the mounting substrate 13 is. A series resonance circuit is formed by the capacitance component, the inductance components of the patterns 3a and 9a, and the matching elements MP1 and MP2, and a signal is transmitted by the series resonance circuit.

図5には、実施例の伝送装置の等価回路が示されており、図5において、C1,C2は、モジュール基板7の上面の先端開放パターン3aの接地容量、C3,C4は、先端開放パターン3a,9a間の容量成分、C5,C6は、実装基板13の上面の先端開放パターン9aの接地容量、L1,L2は、先端開放パターン3a,9aの誘導性(インダクタンス)成分、MP1は、モジュール基板7上面の先端開放パターン3aと伝送線路3間のマッチング素子、即ち幅を小さくした部分、MP2は、実装基板13上面の先端開放パターン9aと伝送線路9間のマッチング素子を表している。   FIG. 5 shows an equivalent circuit of the transmission apparatus according to the embodiment. In FIG. 5, C1 and C2 are ground capacities of the open end pattern 3a on the upper surface of the module substrate 7, and C3 and C4 are open end patterns. Capacitance components 3a and 9a, C5 and C6 are ground capacities of the open end pattern 9a on the top surface of the mounting substrate 13, L1 and L2 are inductive (inductance) components of the open end patterns 3a and 9a, and MP1 is a module. A matching element between the open end pattern 3 a on the upper surface of the substrate 7 and the transmission line 3, that is, a portion with a reduced width, MP2 represents a matching element between the open end pattern 9 a on the upper surface of the mounting substrate 13 and the transmission line 9.

この図5の等価回路から分かるように、モジュール基板7上面と実装基板13上面の対向した先端開放パターン3a,9a間の容量C3,C4と各パターン3a,9aの誘導性成分L1,L2により、直列共振回路を構成している。この直列共振回路において、他の寄生成分の影響が無い場合、この共振周波数が伝送したい所望の周波数であれば、低損失で伝送可能となるが、実際にはC1,C2,C5,C6のような接地容量や、この等価回路には記載していないが、レイアウトに起因するその他の寄生成分が存在しており、その影響を受けることになる。また、小型化の要求等により、先端開放パターンの結合部共振周波数を所望の周波数に合わせられない場合もある。そのため、実施例では、上記のように、マッチング素子MP1,MP2を設けており、先端開放パターン結合部とこのマッチング素子MP1,MP2によって、共振周波数の最適化とインピーダンス整合をとることで、上記接地容量や寄生成分による影響をなくすことが可能となる。   As can be seen from the equivalent circuit of FIG. 5, the capacitances C3 and C4 between the open end patterns 3a and 9a facing the upper surface of the module substrate 7 and the upper surface of the mounting substrate 13 and the inductive components L1 and L2 of the patterns 3a and 9a A series resonant circuit is configured. In this series resonance circuit, when there is no influence of other parasitic components, if the resonance frequency is a desired frequency to be transmitted, transmission is possible with low loss, but in practice, as in C1, C2, C5, and C6. Although not described in this equivalent circuit and the equivalent circuit, other parasitic components due to the layout exist and are affected. In addition, the coupling portion resonance frequency of the open end pattern may not be adjusted to a desired frequency due to a demand for miniaturization or the like. Therefore, in the embodiment, as described above, the matching elements MP1 and MP2 are provided, and the grounding is achieved by optimizing the resonance frequency and impedance matching by the open end pattern coupling portion and the matching elements MP1 and MP2. It is possible to eliminate the influence of capacitance and parasitic components.

しかし、一般的に寄生成分が大きい場合は、上述のインピーダンス整合の結果、非常に帯域が狭くなり、実際には所望の帯域が得られず、使用できない場合が多い。そこで、実施例では、実装基板13の先端開放パターン9aの対向面(裏面)の接地パターン12(の容量性結合部)に、接地パターン空領域12Cを設け、更にその下の金属筐体14の上面に、掘り込み穴14Dを設けることで、接地容量C5,C6の影響を低減するようにしている。   However, in general, when the parasitic component is large, the band is very narrow as a result of the impedance matching described above, and a desired band cannot actually be obtained and often cannot be used. Therefore, in the embodiment, a ground pattern empty region 12C is provided in the ground pattern 12 (capacitive coupling portion thereof) on the opposite surface (back surface) of the open end pattern 9a of the mounting substrate 13, and the metal casing 14 below the ground pattern 12 is provided. By providing the digging hole 14D on the upper surface, the influence of the grounding capacitors C5 and C6 is reduced.

また、空領域12C及び掘り込み穴14Dにより、先端開放パターン9aの幅を広くした場合でも、接地容量C5,C6による高周波側での特性劣化を防ぐことができ、実装基板13を厚くしても、結合容量C3,C4を大きくすることができるため、広帯域な伝送特性が得られる。更に、このような構成により、モジュール基板7と実装基板13との取付けにおいて、位置ずれがあった場合でも結合容量の変化は小さくなり、伝送特性の劣化も小さくなるという利点がある。   Further, even when the width of the open end pattern 9a is widened by the vacant region 12C and the dug hole 14D, characteristic deterioration on the high frequency side due to the grounding capacitors C5 and C6 can be prevented, and the mounting substrate 13 can be made thick. Since the coupling capacitances C3 and C4 can be increased, wideband transmission characteristics can be obtained. Further, such a configuration has an advantage that even when there is a positional deviation in the mounting of the module substrate 7 and the mounting substrate 13, the change in the coupling capacitance is small and the deterioration of the transmission characteristics is also small.

図6(A),(B)には、モジュールを実装部に取り付ける際の構成が示されており、図6(A)は、モジュールMと実装部Sの接地パターン部(4,5,10,12)にネジ16を配置して止め、接地パターン4,5,10,12等を機械的な接触により接続する構造としている。また、図6(B)は、接地パターン部を半田35や導電性接着剤で接続するようにしたものである。このような取付け構造でも、本発明では、取付け位置のバラツキによる特性の変動を抑えることができ、高周波コネクタ等を用いることなく、各種のモジュールMの交換を容易に行うことが可能になる。   6A and 6B show a configuration when the module is attached to the mounting portion, and FIG. 6A shows the ground pattern portions (4, 5, 10 of the module M and the mounting portion S). 12), screws 16 are arranged and fixed, and the ground patterns 4, 5, 10, 12 and the like are connected by mechanical contact. FIG. 6B shows the ground pattern portion connected by solder 35 or a conductive adhesive. Even with such a mounting structure, in the present invention, fluctuations in characteristics due to variations in mounting positions can be suppressed, and various modules M can be easily replaced without using a high-frequency connector or the like.

図7には、実施例の構成による伝送特性が示されており、挿入損失は101、反射損失は201のようになっており、挿入損失、反射損失共に、良好な特性となった。なお、本発明の伝送装置は、導波管モードの伝送ではないため、容量性結合部周辺の接地パターン空領域4C,5C,10C,12Cの幅やシールド筐体2或いは金属筐体14の掘り込み穴14Dの幅が、使用帯域の周波数で導波管としてのカットオフ以下となるような寸法であっても、帯域は狭くなるものの使用可能である。   FIG. 7 shows the transmission characteristics according to the configuration of the example. The insertion loss is 101 and the reflection loss is 201. Both the insertion loss and the reflection loss are good characteristics. Since the transmission device of the present invention is not a waveguide mode transmission, the width of the ground pattern empty regions 4C, 5C, 10C, and 12C around the capacitive coupling portion and the shield casing 2 or the metal casing 14 are dug. Even if the width of the insertion hole 14D is a dimension that is equal to or less than the cutoff as the waveguide at the frequency of the use band, it can be used although the band is narrowed.

また、モジュール基板7の上面の先端開放パターン3aと実装基板13の上面の先端開放パターン7aの重なる長さは、約1/4波長のときに最も広帯域となるが、それより短い場合でも、先端開放パターン3a,7aの誘導性成分と前後のマッチング素子MP1,MP2の補正により所望の周波数で使用することが可能である。この場合も、小型化と帯域幅のトレードオフとなる。   The overlapping length of the open top pattern 3a on the top surface of the module substrate 7 and the open top pattern 7a on the top surface of the mounting substrate 13 is the widest band when the wavelength is about 1/4 wavelength. It can be used at a desired frequency by correcting the inductive components of the open patterns 3a and 7a and the matching elements MP1 and MP2 before and after. Again, this is a trade-off between miniaturization and bandwidth.

更に、実施例では、上記モジュール基板7の先端開放パターン3aの裏面の接地パターン5の空領域5Cに、この接地パターン5の厚さと同じか若干厚い誘電体シート16を形成することで、空領域5Cの空隙で生じる伝送特性の劣化が改善できる。即ち、モジュール基板7の銅箔からなる接地パターン5は、通常30μm程度の厚みを持っているため、導電体シート16がない場合は、上記のモジュール基板7を実装基板13に取り付けたとき、上記の接地パターン5の厚みに起因する空隙が、実装基板13上面の先端開放パターン9aとモジュール基板7の基材との間に存在することになる。ここで、先端開放パターン3a,9a間の容量成分において、モジュール基板7の基材の厚さ分に関しては一定と考えてよいが、上記空隙が存在する場合は、基材による容量成分とこれに直列の空気層(誘電率1)で形成される容量成分となり、その合成容量が小さいため、伝送特性が悪化する。   Furthermore, in the embodiment, by forming a dielectric sheet 16 that is the same as or slightly thicker than the thickness of the ground pattern 5 in the blank area 5C of the ground pattern 5 on the back surface of the open end pattern 3a of the module substrate 7, It is possible to improve the deterioration of transmission characteristics caused by the 5C gap. That is, since the ground pattern 5 made of copper foil of the module substrate 7 usually has a thickness of about 30 μm, when the conductor sheet 16 is not provided, when the module substrate 7 is attached to the mounting substrate 13, A gap due to the thickness of the grounding pattern 5 exists between the tip opening pattern 9 a on the upper surface of the mounting substrate 13 and the base material of the module substrate 7. Here, in the capacity component between the tip open patterns 3a and 9a, it may be considered that the thickness of the base material of the module substrate 7 is constant. However, when the gap is present, Since the capacitance component formed by the serial air layer (dielectric constant 1) is small and the combined capacitance is small, the transmission characteristics are deteriorated.

図8には、誘電体シート16を用いた場合と用いない場合の伝送特性が示されており、誘電体シート16を設けず、30μmの間隙が存在した場合には、点線の挿入損失102、反射損失202の特性となる。即ち、間隙が存在する場合は、容量成分が小さくなるため、共振周波数が高周波側に移動し、整合状態も変化するため、伝送特性が劣化する。これに対し、誘電体シート16を設けた場合は、空隙に比べると合成容量が大きくなるので、図7で示したように、実線の挿入損失101、反射損失201の特性が得られ、安定した伝送特性を得ることができる。なお、周囲温度の変化により、空領域5Cの空隙幅が変化することがあるが、実施例では、誘電体シート16の厚みを接地パターン5の厚み、即ち空領域5Cの空隙幅よりも少し大きくしており、これによって、周囲温度の変化により僅かな隙間ができた場合でも、特性に変動が起きないようにすることができる。   FIG. 8 shows transmission characteristics when the dielectric sheet 16 is used and when the dielectric sheet 16 is not used. When the dielectric sheet 16 is not provided and a gap of 30 μm exists, a dotted insertion loss 102, The characteristic of the reflection loss 202 is obtained. That is, when there is a gap, the capacitance component becomes small, the resonance frequency moves to the high frequency side, and the matching state also changes, so that the transmission characteristics deteriorate. On the other hand, when the dielectric sheet 16 is provided, since the combined capacity is larger than the gap, the characteristics of the solid line insertion loss 101 and the reflection loss 201 are obtained and stable as shown in FIG. Transmission characteristics can be obtained. Although the gap width of the empty area 5C may change due to the change in the ambient temperature, in the embodiment, the thickness of the dielectric sheet 16 is slightly larger than the thickness of the ground pattern 5, that is, the gap width of the empty area 5C. Thus, even when a slight gap is formed due to a change in the ambient temperature, it is possible to prevent the characteristics from fluctuating.

図9には、モジュール基板が多層基板となる場合の伝送装置の構成が示されており、図9に示されるように、モジュール基板7が上部基板7Aと下部基板7Bを有し、この上部基板7Aと下部基板7Bの間に、内層パターン17が形成されている。そして、上記上部基板7Aの上面に、伝送線路3及び先端開放パターン3aが形成され、下部基板7Bの裏面に、接地パターン5が形成されており、その他の構成は、上記実施例と同様となっている。このような構成でも、上記実施例と同様の効果を得ることができる。   FIG. 9 shows the configuration of the transmission apparatus when the module substrate is a multilayer substrate. As shown in FIG. 9, the module substrate 7 has an upper substrate 7A and a lower substrate 7B. An inner layer pattern 17 is formed between 7A and the lower substrate 7B. Then, the transmission line 3 and the open end pattern 3a are formed on the upper surface of the upper substrate 7A, and the ground pattern 5 is formed on the back surface of the lower substrate 7B. Other configurations are the same as those in the above embodiment. ing. Even with such a configuration, the same effect as in the above embodiment can be obtained.

本発明は、マイクロ波帯からミリ波帯の高周波モジュールに適用でき、またMMIC等のパッケージ等にも応用することが可能である。   The present invention can be applied to microwave to millimeter wave band high-frequency modules, and can also be applied to packages such as MMIC.

本発明の実施例に係る高周波伝送装置の構成を示す斜視図である。It is a perspective view which shows the structure of the high frequency transmission apparatus which concerns on the Example of this invention. 実施例の高周波伝送装置の各部材を上斜め方向から見た分解斜視図である。It is the disassembled perspective view which looked at each member of the high frequency transmission device of an example from the upper direction. 実施例の高周波伝送装置の各部材を下斜め方向から見た分解斜視図である。It is the disassembled perspective view which looked at each member of the high frequency transmission apparatus of an example from the lower diagonal direction. 実施例の高周波伝送装置の構成を示す断面図である。It is sectional drawing which shows the structure of the high frequency transmission apparatus of an Example. 実施例の高周波伝送装置の結合部の簡易等価回路を示す図である。It is a figure which shows the simple equivalent circuit of the coupling | bond part of the high frequency transmission apparatus of an Example. 実施例の高周波伝送装置の組立て、取付けの状態を示す斜視図である。It is a perspective view which shows the assembly of the high frequency transmission apparatus of an Example, and the state of attachment. 実施例の伝送特性を示すグラフ図である。It is a graph which shows the transmission characteristic of an Example. 実施例において誘電体シートを用いた場合と用いない場合の伝送特性を示すグラフ図である。It is a graph which shows the transmission characteristic when not using with the dielectric material sheet in an Example. 実施例において多層基板からなる高周波モジュールを用いた場合の構成を示す断面図である。It is sectional drawing which shows the structure at the time of using the high frequency module which consists of a multilayer board | substrate in an Example. 従来の高周波伝送装置の1つの構成例を示し、図(A)は上面図、図(B)は断面図である。One structural example of the conventional high-frequency transmission apparatus is shown, FIG. (A) is a top view and FIG. (B) is a sectional view. 従来の高周波伝送装置の他の構成例を示し、図(A)は上面図、図(B)は断面図である。The other example of a structure of the conventional high frequency transmission apparatus is shown, A figure (A) is a top view, A figure (B) is sectional drawing.

符号の説明Explanation of symbols

2,22…シールド筐体、 3,9,19,23,29…伝送線路、
3a,9a,19a,19b,19c…先端開放パターン、
4,5,10,12,20a〜20e,30,32,36…接地パターン(接地電極)、
4C,5C,10C,12C…接地パターン空領域、
7,27…モジュール基板、 13,33…実装基板、
14,34…金属筐体、 14D…掘り込み穴、
16…誘電体シート。
2, 22 ... shield housing, 3, 9, 19, 23, 29 ... transmission line,
3a, 9a, 19a, 19b, 19c ... tip open pattern,
4, 5, 10, 12, 20a to 20e, 30, 32, 36... Ground pattern (ground electrode),
4C, 5C, 10C, 12C ... ground pattern empty area,
7, 27 ... module substrate, 13, 33 ... mounting substrate,
14, 34 ... metal casing, 14D ... digging hole,
16 ... dielectric sheet.

Claims (3)

高周波伝送線路及び接地電極が形成された複数の基板を積層配置する高周波伝送装置において、
面に、接地電極の空領域が形成され、かつこの空領域内に上記伝送線路の先端開放パターンが形成され、裏面に、上記表面空領域と略一致する位置に接地電極の空領域が形成された高周波モジュール基板と、
面に、接地電極の空領域が形成され、かつこの空領域内に上記伝送線路の先端開放パターンが形成され、裏面に、接地電極が形成された実装高周波回路基板と、
上記高周波モジュール基板の裏面接地電極と上記実装高周波回路基板の表面接地電極を接続し、かつそれぞれの空領域が合わせられる状態で上記高周波モジュール基板と実装高周波回路基板を直接重ねることにより、それぞれの伝送線路の先端開放パターンを直流的に絶縁しながら容量性結合する容量結合部が形成された直列共振回路と、
この直列共振回路に設けられたインピーダンス整合部と、を含み、
上記直列共振回路により高周波を伝送することを特徴とする高周波伝送装置。
In a high- frequency transmission device in which a plurality of substrates on which high-frequency transmission lines and ground electrodes are formed are stacked ,
On the front surface, the free area of the ground electrode is formed, and open-end pattern of the transmission line is formed in the empty area, on the back, empty area of the ground electrode at a position substantially coincident with the said surface Sky region formed A high-frequency module substrate,
On the front surface, the free area of the ground electrode is formed and the open-end pattern of the transmission line to an empty area is formed on the back surface, and mounting a high-frequency circuit board which the earth electrode is formed,
By superimposing the high-frequency module connecting a back surface ground electrode and the surface ground electrode of the mounting high-frequency circuit board of the board, and the mounting high-frequency circuit board with the RF module substrate directly in a state to match the respective empty regions, each transmission A series resonant circuit in which a capacitive coupling unit that capacitively couples the open end pattern of the line with DC insulation is formed;
Including an impedance matching unit provided in the series resonant circuit,
A high-frequency transmission device that transmits high frequency by the series resonance circuit.
上記容量結合部として、上記実装高周波回路基板の裏面にも、その表面空領域と略一致する位置に接地電極の空領域を設けると共に、この実装高周波回路基板の裏面側に配置される金属筐体には、上記裏面空領域と略同一の面積の掘り込み穴を設け、
上記高周波モジュール基板の裏面空領域に、この裏面の接地電極の厚さと同一か又はそれ以上の厚さの誘電体シートを設けたことを特徴とする請求項1記載の高周波伝送装置。
As the capacitive coupling part, on the back surface of the mounting a high-frequency circuit board, provided with a free area of the ground electrode at a position substantially coincident with the surface thereof free area, the metal casing that is disposed on the back side of the mounting high-frequency circuit board Is provided with a digging hole of substantially the same area as the backside empty area,
2. The high- frequency transmission device according to claim 1, wherein a dielectric sheet having a thickness equal to or greater than the thickness of the ground electrode on the back surface is provided in an empty area on the back surface of the high-frequency module substrate.
上記高周波モジュール基板の表面側に配置されるシールド筐体には、上記表面空領域と略同一の面積のキャビティが設けられていることを特徴とする請求項2記載の高周波伝送装置。 3. The high-frequency transmission device according to claim 2, wherein a cavity having substantially the same area as that of the surface empty region is provided in the shield casing disposed on the surface side of the high-frequency module substrate.
JP2008234729A 2008-09-12 2008-09-12 High frequency transmission equipment Active JP5279424B2 (en)

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JP6123801B2 (en) * 2012-06-11 2017-05-10 日本電気株式会社 Electromagnetic wave propagation system, interface device and electromagnetic wave propagation sheet
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JP7158436B2 (en) * 2020-05-25 2022-10-21 アンリツ株式会社 CIRCUIT ELEMENT, CIRCUIT ELEMENT MANUFACTURING METHOD AND ELECTRICAL SIGNAL TRANSMISSION METHOD

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