JP5276785B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5276785B2 JP5276785B2 JP2006283282A JP2006283282A JP5276785B2 JP 5276785 B2 JP5276785 B2 JP 5276785B2 JP 2006283282 A JP2006283282 A JP 2006283282A JP 2006283282 A JP2006283282 A JP 2006283282A JP 5276785 B2 JP5276785 B2 JP 5276785B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- sacrificial layer
- sacrificial
- structural
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 238000005530 etching Methods 0.000 abstract description 288
- 238000000034 method Methods 0.000 abstract description 123
- 238000004519 manufacturing process Methods 0.000 abstract description 58
- 230000008569 process Effects 0.000 abstract description 27
- 238000004904 shortening Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 935
- 239000003795 chemical substances by application Substances 0.000 description 47
- 230000006870 function Effects 0.000 description 31
- 238000001312 dry etching Methods 0.000 description 30
- 238000001039 wet etching Methods 0.000 description 26
- 238000002474 experimental method Methods 0.000 description 24
- 239000011241 protective layer Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000007789 gas Substances 0.000 description 22
- 239000012535 impurity Substances 0.000 description 22
- 238000012545 processing Methods 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000004891 communication Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 14
- 239000007795 chemical reaction product Substances 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000010365 information processing Effects 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000352 supercritical drying Methods 0.000 description 1
Landscapes
- Micromachines (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006283282A JP5276785B2 (ja) | 2005-10-26 | 2006-10-18 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005312034 | 2005-10-26 | ||
| JP2005312034 | 2005-10-26 | ||
| JP2006283282A JP5276785B2 (ja) | 2005-10-26 | 2006-10-18 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007144611A JP2007144611A (ja) | 2007-06-14 |
| JP2007144611A5 JP2007144611A5 (enrdf_load_stackoverflow) | 2009-11-19 |
| JP5276785B2 true JP5276785B2 (ja) | 2013-08-28 |
Family
ID=38206618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006283282A Expired - Fee Related JP5276785B2 (ja) | 2005-10-26 | 2006-10-18 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5276785B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009028807A (ja) * | 2007-07-24 | 2009-02-12 | Rohm Co Ltd | Ｍｅｍｓセンサ |
| JP2012532470A (ja) * | 2009-07-06 | 2012-12-13 | アイメック | Ｍｅｍｓ可変キャパシタの製造方法 |
| DE102011057169A1 (de) * | 2011-12-29 | 2013-07-04 | Maxim Integrated Products, Inc. | Mikroelektromechanisches System |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0537082A (ja) * | 1991-07-26 | 1993-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の加工方法 |
| JPH09113534A (ja) * | 1995-10-23 | 1997-05-02 | Yoshinobu Matsumoto | 加速度センサー |
| JP4081868B2 (ja) * | 1998-08-10 | 2008-04-30 | 日産自動車株式会社 | 微小装置の製造方法 |
| US6238946B1 (en) * | 1999-08-17 | 2001-05-29 | International Business Machines Corporation | Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing |
| JP4772302B2 (ja) * | 2003-09-29 | 2011-09-14 | パナソニック株式会社 | 微小電気機械システムおよびその製造方法 |
| JP2005166512A (ja) * | 2003-12-04 | 2005-06-23 | Yokogawa Electric Corp | 継電器 |
-
2006
- 2006-10-18 JP JP2006283282A patent/JP5276785B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007144611A (ja) | 2007-06-14 |
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