JP5267918B2 - Holding device and polishing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a holding device capable of improving processing precision in flattening. <P>SOLUTION: The wafer holding device 50 includes a guide device 70 supporting at least a part of a portion projecting from a surface 31 to be polished of a polishing member 42 in polishing a wafer 30 by being installed adjacent to the wafer 30 and bringing a polishing member 42 into contact with the surface 31 to be polished. The guide device 70 has a plurality of rotatable guide rollers 80 which are positioned, flush with the surface 31 to be polished so that an upper end portion positioned on the polishing member 42 side, of a peripheral surface, supports at least a part of the projecting portion. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a holding device for holding a workpiece in planar processing for flattening a processing surface of a workpiece such as a semiconductor wafer, and a polishing apparatus using the holding device.

  Conventionally, as a polishing apparatus for flattening the surface of an object to be polished such as a semiconductor wafer, a wafer holding apparatus that holds the wafer in a state where the surface to be polished is exposed, and a surface to be polished of the wafer held by the wafer holding apparatus And a polishing member to which a polishing pad opposite to the substrate is attached. While both of them are rotated, the polishing pad is pressed against the surface to be polished of the wafer, and the polishing member is swung in the contact surface in the both directions. A configuration for polishing a wafer is known. In addition to such mechanical polishing, CMP that performs chemical mechanical polishing for supplying the polishing agent (polishing liquid) to the contact surface between the polishing pad and the wafer and promoting the polishing by the chemical action of the polishing agent. Devices are also known.

  As this type of polishing apparatus, for example, a polishing apparatus using a polishing pad having a diameter smaller than that of a wafer and a (conventional) polishing apparatus using a polishing pad having a diameter larger than that of a wafer are known. In a polishing apparatus using a polishing pad having a diameter smaller than that of a wafer, for example, the wafer is vacuum-sucked on the wafer chuck with its surface to be polished facing upward (in a face-up state), and is rotationally driven together with the wafer chuck. A polishing head is disposed above the wafer so as to face the wafer, and the polishing head is configured to have a polishing member to which a polishing pad that contacts a surface to be polished of the wafer is attached. Wafer polishing using the polishing apparatus having such a configuration is performed by contacting the polishing surface of the wafer held by the wafer chuck while rotating the polishing pad. At this time, the polishing pad rotates. However, by reciprocating in the horizontal direction with respect to the wafer, the entire surface of the wafer is uniformly polished.

  By the way, in such a polishing apparatus, when the polishing pad is moved horizontally to polish the vicinity of the edge of the wafer, the polishing pad protrudes (overhangs) from the wafer. At this time, in the polishing apparatus as described above, when the polishing pad (polishing member) protrudes from the wafer, the polishing pad hangs down, and an uneven load acts on the wafer to change the distribution of the polishing pressure. There was a problem that it was likely to occur.

Therefore, a wafer chuck having a retainer (retainer ring) having a guide surface at the same height as the surface to be polished of the wafer has been devised (see, for example, Patent Document 1). As a result, the retainer supports the protruding portion (overhang portion) of the polishing pad at the same height position as the surface to be polished of the wafer, thereby preventing the load from acting on the wafer.
JP 2000-317817 A

  However, in the wafer chuck, the retainer is fixed to the wafer chuck and rotates integrally with the wafer chuck. However, since the polishing pad and the retainer are in relative rotation and contact with each other, both the polishing pad and the retainer are in contact with each other. A frictional force or frictional heat is applied to the surface. As a result, the polishing pad is damaged, the retainer wears and a step occurs between the surface to be polished and the guide surface of the retainer, and the polishing pad tilts and an uneven load acts on the wafer. There is a problem that it is difficult to ensure desired processing accuracy (flatness) in wafer polishing.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a holding device capable of improving the processing accuracy by plane processing, and a polishing device using the holding device.

In order to achieve such an object, a holding device according to the present invention is a holding device used in a processing device for processing a processed surface of a workpiece using a processing member, and is an abbreviation that supports the workpiece. A disk-shaped base member and a workpiece that is provided adjacent to the workpiece and protrudes from the workpiece surface when the workpiece is flattened by contacting the workpiece surface while rotating the workpiece. And a support member having a plurality of rotating bodies that support at least a part of the portion , and the rotating body is a cylindrical roller that is rotatable about a rotation axis that extends along a plane including the work surface. The ridge line portion that is located on the processing member side of the peripheral surface portion of the roller body and extends in the axial direction of the rotation shaft is positioned on the same surface as the processing surface so as to support at least a part of the protruding portion. The plurality of roller bodies are the outer peripheral surface of the base member The roller body is rotatable about a rotating shaft extending radially from the vicinity of the outer peripheral surface of the base member, and the roller body has a notch groove with a predetermined depth shallower than the thickness of the workpiece on the peripheral surface portion. configured by.

  Furthermore, the polishing apparatus according to the present invention includes the holding device having the above-described configuration and a polishing member capable of polishing the workpiece surface of the workpiece. The polishing device is in contact with the workpiece while the polishing member is in contact with the workpiece surface of the workpiece. The workpiece is moved to polish the workpiece surface, and the rotating body supports the protruding portion of the polishing member protruding from the workpiece to the surroundings.

  According to the present invention, it is possible to improve the processing accuracy by plane processing.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a CMP apparatus (chemical mechanical polishing apparatus) which is a representative example of a polishing apparatus provided with a holding apparatus (wafer holding apparatus) according to the first embodiment of the present invention.

  The CMP apparatus 1 is provided on a wafer holding apparatus 50 that can hold a semiconductor wafer (hereinafter referred to as a wafer) 30 as an object to be polished, and a position above the wafer holding apparatus 50, and is held on the wafer holding apparatus 50. It comprises a polishing head 40 that holds a polishing member 41 to which a polishing pad 42 facing the surface to be polished 31 of the wafer 30 is attached. The wafer holding device 50 is provided adjacent to a suction device 60 that can detachably hold the wafer 30 on the upper surface side thereof, and a side position of the suction device 60. And a guide device 70 for supporting a protruding portion (overhang portion) of the polishing head 40 (polishing pad 42) protruding to the periphery thereof.

  In this CMP apparatus 1, the size (diameter) of the polishing pad 42 is smaller than the size (diameter) of the wafer 30 (that is, the polishing pad 42 is smaller in diameter than the wafer 30), and the polishing pad 42 is brought into contact with the wafer 30. The entire surface to be polished (upper surface) 31 of the wafer 30 can be polished by relatively moving both in the state. At this time, a part of the polishing head 40 (polishing pad 42) temporarily protrudes from the surface to be polished 31 of the wafer 30 to the periphery (right side in FIG. 1) by the swinging motion of the polishing head 40. As a result, the vicinity of the edge portion of the polished surface 31 of the wafer 30 can also be polished.

  A support frame 20 that supports the wafer holding device 50 and the polishing head 40 extends in the Y direction (this is a direction perpendicular to the paper surface in the front-rear direction) on the horizontal base 21 and the base 21. A first stage 22 provided on a rail (not shown) provided so as to be movable in the Y direction, a vertical frame 23 provided so as to extend vertically (Z direction) from the first stage 22, and A second stage 24 provided above the vertical frame 23, a horizontal frame 25 provided so as to extend horizontally (X direction) from the second stage 24, and an X direction (left-right direction) on the horizontal frame 25 And a third stage 26 that is movably provided.

  A first electric motor M1 is provided in the first stage 22, and the first stage 22 can be moved in the Y direction along the rail by being driven to rotate. In addition, a second electric motor M2 is provided in the third stage 26, and the third stage 26 can be moved in the X direction along the horizontal frame 25 by rotationally driving the second electric motor M2. Therefore, the third stage 26 can be moved to an arbitrary position above the wafer holding device 50 (the suction device 60) by combining the rotation operations of the electric motors M1 and M2.

  The polishing head 40 is attached to a lower end portion of a spindle 29 that extends vertically downward from the third stage 26. The spindle 29 is rotated by rotationally driving a fourth electric motor M4 provided in the third stage 26. As a result, the entire polishing head 40 is rotated to bring the polishing pad 42 into the XY plane ( In a horizontal plane).

  The suction device 60 is attached in a horizontal posture to an upper end portion of a rotary shaft 28 provided vertically extending from a table support portion 27 provided on the base 21. The rotary shaft 28 is rotated by rotationally driving a third electric motor M3 provided in the table support portion 27, whereby the suction device 60 is rotated in the XY plane (horizontal plane). Can do.

  The suction device 60 is formed in a disk shape using a ceramic material or the like, and is configured to suck and hold the wafer 30 in a suction portion 61 formed on the upper surface side. Although not shown in detail, the suction portion 61 has a structure in which a large number of pin-shaped protrusions (not shown) are formed on the upper surface, and a vacuum (not shown) is formed in the recess located between the protrusions. A number of suction holes (not shown) connected to the source (vacuum pump) are provided. Then, by bringing the back surface (surface to be attracted) 32 of the wafer 30 into contact with the upper surface of the suction portion 61 (projection) and applying a negative pressure to the suction hole, the surface to be attracted 32 of the wafer 30 is attracted to the suction portion 61 (that is, The upper surface of the suction device 60) is vacuum-sucked. In this manner, the wafer 30 is sucked and held by the sucking device 60 in a state where the sucked surface 32 of the wafer 30 is vacuum sucked on the upper surface of the sucking portion 61 (protrusion).

  The guide device 70 is provided on the table support portion 27 adjacent to the side of the suction device 60 so as to be located immediately below the swinging locus of the polishing head 40. As shown in FIGS. 2 and 3, the guide device 70 is provided with a support base 71 fixed on the table support portion 27 and the support base 71, and has a predetermined curvature (adsorption member 60) within the horizontal plane. The inner plate 72 formed with a curvature along the outer peripheral portion of the outer plate 73, the outer plate 73 disposed opposite to the inner plate 72 with a certain interval, and the lower ends of the side plates 72 and 73. A frame member 75 composed of a bottom plate 74 having a generally fan shape in plan view to be connected and connected, a plurality of support shafts 76 extending horizontally in the radial direction between the inner plate 72 and the outer plate 73, and this support The shaft 76 includes a plurality of guide rollers 80 that are rotatably supported through bearing members (not shown).

  Each guide roller 80 is formed in a hollow cylindrical shape using a highly rigid material such as stainless steel or ceramic, or a resin material such as Teflon (registered trademark) or polyetheretherketone (PEEK). 60 are arranged at equal radial intervals in a horizontal posture from the vicinity of the outer peripheral portion. Further, the upper end portion (ridge line portion) of the outer peripheral surface of each guide roller 80 is set to have the same height as the polished surface 31 of the wafer 30 held by the suction device 60.

  A pair of notch grooves 81 having a predetermined depth are formed in the outer peripheral portion of each guide roller 80 along the circumferential direction so as to serve as an indicator that indicates the life (replacement timing) of the guide roller 80. It has become. In this way, the life of the guide roller 80 (replacement timing) can be easily grasped by sequentially confirming the boundary of the step between the outer circumferential surface and the notch groove 81 that fluctuates due to wear of the outer circumference of the guide roller 80. In addition, the maintainability is improved, and it is possible to prevent the polishing accuracy of the wafer 30 from being lowered due to an unbalanced load caused by the poor support of the polishing pad 42 by the guide roller 80. The depth of the notch groove 81 formed in the outer peripheral portion of the guide roller 80 is determined by the thickness of the wafer 30 as an object to be polished, and is preferably set smaller (shallow) than the thickness of the wafer 30.

  In such a guide device 70, a guide whose height is adjusted to the surface to be polished 31 of the wafer 30 by a plane region (region in a horizontal plane) including a ridge line portion formed by the upper end portion of the outer peripheral surface of each guide roller 80. A surface is formed, and the polishing surface of the polishing pad 42 can be brought into contact with the upper end portion of the outer peripheral surface of each guide roller 80 in the guide surface. Thereby, the guide roller 80 (the upper end portion of the outer peripheral surface thereof) can support the overhang portion of the polishing pad 42 from the wafer 30. Further, since the guide roller 80 contacts the rotating polishing pad 42 and is rotated by the rotational force of the polishing pad 42, only a part of the outer peripheral surface of the guide roller 80 is not worn intensively. Furthermore, the movement of the wafer 30 on the extended surface of the attracted surface 32 can be restricted by the inner plate 72 of the frame member 75.

  In order to polish the wafer 30 using the CMP apparatus 1 having such a configuration, first, the wafer 30 to be polished is suction-attached to the upper surface of the suction device 60 (at this time, the center of the wafer 30 is the center of the suction device 60). Match the center of rotation). Next, the rotation shaft 28 is driven by the electric motor M3 to rotate the suction device 60 and the wafer 30. Subsequently, the electric motors M1 and M2 are driven to position the third moving stage 26 above the wafer 30, and the spindle 29 is driven by the electric motor M4 to rotate the polishing head 40. Next, the polishing head 40 is lowered using an air cylinder (not shown) that moves the polishing head 40 up and down so that the lower surface (polishing surface) of the polishing pad 42 is pressed against the surface to be polished 31 of the wafer 30. .

  At this time, predetermined air is supplied into the polishing head 40 from an air supply source (not shown), and the contact pressure between the wafer 30 and the polishing pad 42 is set to a predetermined value by the air pressure in the polishing head 40. Then, the electric motor M2 is driven to swing the polishing head 40 in the X direction. At the same time, the polishing agent is pumped from a polishing agent supply device (not shown) to supply the polishing agent to the lower surface side of the polishing pad 42. As a result, the surface to be polished 31 of the wafer 30 is polished by the rotational motion of the wafer 30 itself and the rotational and swinging motion of the polishing head 40 (that is, the polishing pad 42) while being supplied with the abrasive.

  Here, in the oscillating motion of the polishing head 40, as shown in FIG. 3, a part of the polishing head 40 is temporarily separated from the wafer 30 around the edge portion (outer peripheral portion) of the wafer 30 during polishing. It protrudes (to the right in FIG. 3). At this time, the guide roller 80 of the guide device 70 is disposed at a position close to the edge portion (outer peripheral portion) of the wafer 30 so as to be substantially flush with the surface to be polished 31 of the wafer 30. When protruding from the wafer 30, the guide device 70 (guide roller 80) supports the protruding portion of the polishing member 41 (polishing pad 42) from the wafer 30, so that the uneven load of the polishing member 41 can be received by the guide device 70. (The polishing member 41 can be in a state substantially equivalent to the state in which the polishing member 41 does not protrude from the wafer 30), and the uniformity (flatness) in the vicinity of the outer peripheral portion of the wafer 30 can be improved. That is, it can be expected that edge exclusion, which is a region that is not subject to evaluation, such as uniformity in the edge portion (outer peripheral portion) of the wafer 30, is reduced.

  Further, since each guide roller 80 of the guide device 70 is rotatably held with the support shaft 76 as a rotation axis, each guide roller 80 receives the rotational force of the polishing member 41 (polishing pad 42) (the polishing pad 42). So as to release the rotational force of the polishing pad 42. For this reason, each guide roller 80 is brought into contact with the polishing surface of the polishing pad 42, so that it does not become a great resistance to the rotational movement of the polishing pad 42, and it is possible to prevent the polishing pad 42 from being twisted. . Thereby, damage given to the polishing pad 42 due to friction with the guide roller 80 or the like can be reduced, so that processing accuracy in polishing the wafer 30 can be improved.

  Further, since the guide roller 80 is rotated (rotated) by the rotational force of the polishing member 41 (polishing pad 42) and supports the protruding portion of the polishing pad 42 from the wafer 30, only a part of the guide roller 80 is concentrated. Therefore, the life of the guide roller 80 can be extended. For this reason, the replacement frequency due to wear of the guide roller 80 is reduced and the maintainability is improved, and the guide roller 80 supports the protruding portion of the polishing pad 42 from the wafer 30 accurately and stably over a long period of time (the polishing member 41 It is possible to prevent uneven loads.

  And according to CMP apparatus 1 provided with wafer holding device 50 of the above composition, polishing of wafer 30 can be performed uniformly and the processing accuracy and yield of wafer 30 can be improved.

  In the above-described embodiment, the guide device 70 is disposed only in the vicinity of the position immediately below the swinging locus of the polishing head 40 adjacent to the suction device 60, but is not limited thereto, and the suction device 60 is not limited thereto. Further, it may be arranged so as to surround the periphery of the wafer 30 (the entire outer periphery). According to this, even when applied to a conventional polishing apparatus in which the diameter of the polishing pad 42 (polishing surface) is larger than the diameter of the wafer 30 (surface to be polished), the protruding portion (the entire outer peripheral edge) of the polishing pad 42 is removed. It can be reliably supported.

  Further, in the above-described embodiment, as shown in FIG. 1, the polishing apparatus in which the wafer 30 is held by the wafer holding apparatus 50 below the polishing member 41 has been described. However, the present invention is not limited to this. The present invention can also be applied to a polishing apparatus having a configuration in which a wafer is held above by a wafer holding apparatus.

  Furthermore, in the above-described embodiment, the guide roller 80 is formed in a (hollow) cylindrical shape, but is not limited thereto, and is configured using a truncated cone-shaped guide roller 90 as shown in FIG. May be. When this guide roller 90 supports the protruding portion of the polishing pad 42 from the wafer 30, it corresponds to the difference in the peripheral speed in the radial direction of the polishing pad 42 (the peripheral speed increases as the distance from the rotation center increases). Then, by increasing the circumferential length of the guide roller 90 as it moves from the inner side plate 92 side toward the outer side plate 93 side (that is, increase the peripheral speed due to the rotation of the guide roller 90), the polishing pad, It is possible to reduce the unbalance of the rotational force in the contact area with the guide roller 90 that is swung around by the polishing pad 42 and to prevent the polishing pad 42 from being twisted.

  In the above-described embodiment, the guide device 70 and the suction device 60 may be configured to be relatively movable in the vertical direction. According to this, regardless of the wear of the guide roller 80, the mounting accuracy of the guide device 70 and the suction device 60, the suction (attachment) accuracy of the wafer 30, the polished surface 31 of the wafer 30 held by the suction device 60 and the like. It can be adjusted so that the height with the upper end part (ridge line part) of the outer peripheral surface of each guide roller 80 of the guide device 70 is always the same.

  Next, a holding device (wafer holding device) according to the second embodiment will be described. A CMP apparatus 101 provided with a wafer holding apparatus 150 of the second embodiment is shown in FIG. In this embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description will be made focusing on differences from the first embodiment.

  Similar to the CMP apparatus 1 (provided with the wafer holding apparatus 50) of the first embodiment, the CMP apparatus 101 includes a wafer holding apparatus 150 capable of holding the wafer 30 as an object to be polished, a surface to be polished 31 of the wafer 30, and And a polishing head 40 that holds a polishing member 41 to which an opposing polishing pad 42 is attached. Further, the wafer holding device 150 is provided so as to surround the suction device 60 capable of detachably sucking and holding the wafer 30 on the upper surface side of the wafer 30 and the periphery (the entire outer peripheral portion) of the suction device 60. And a guide device 170 for supporting a protruding portion (overhang portion) of the polishing head 40 (polishing pad 42) protruding from the wafer 30 to the periphery thereof.

  The guide device 170 is provided on a hollow cylindrical support base 171 fixed on the table support unit 27 so as to surround the periphery of the suction apparatus 60 coaxially with the suction apparatus 60, and provided on the upper surface of the support base 171. And a free bearing 172 having a guide ball (sphere) 180.

  The free bearing 172 includes a hollow cylindrical housing 173 provided with a plurality of hemispherical housing grooves 174 that open upward, a plurality of small balls 175 disposed in the respective housing grooves 174, and the inside of each housing groove 174. , A plurality of guide balls 180 whose bottom part is held by a plurality of small balls 175 so as to roll freely in an arbitrary direction (360 degrees), and a cap part 176 that covers the top of the housing 173.

  Each guide ball 180 is formed in a spherical shape using a highly rigid material such as stainless steel or ceramic, or a resin material such as Teflon or polyetheretherketone (PEEK), and 2 in the radial direction in the housing 173. The rows are arranged at equal intervals in the circumferential direction (see FIG. 6). Each guide ball 180 protrudes (exposes) upward from an opening 177 formed in the cap portion 176 corresponding to the opening position of each housing groove 174 in the housing 173, and the cap portion 176. Therefore, it is regulated and held so as not to be detached from the housing 173. Further, the uppermost portion (spherical end) of each guide ball 180 is set to be the same height as the surface to be polished 31 of the wafer 30 held by the suction device 60.

  In such a guide device 170, the height is adjusted to the surface to be polished 31 of the wafer 30 by a plane region (region in a horizontal plane) including a vertex (spherical end) located at the top of each guide ball 180. A guide surface is formed, and the polishing surface of the polishing pad 42 is configured to be able to contact the apex of each guide ball 180 within the guide surface. As a result, the guide ball 180 (the apex located at the top of the guide ball) can support the protruding portion of the polishing pad 42 from the wafer 30. Further, since the guide ball 180 abuts on the rotating polishing pad 42 and is rotated by the rotational force of the polishing pad 42, only a part of the spherical surface of the guide ball 180 is not intensively worn. Further, the movement of the wafer 30 on the extended surface of the attracted surface 32 can be regulated by the inner wall of the guide member 170 (free bearing 172).

  Even when the CMP apparatus 101 including the wafer holding apparatus 150 according to the second embodiment is used, the wafer 30 is polished in the same manner as the CMP apparatus 1 (including the wafer holding apparatus 50) according to the first embodiment. be able to. At this time, since the guide ball 180 of the guide device 170 is disposed substantially flush with the surface to be polished 31 around the wafer 30 as the object to be polished, when the polishing member 41 protrudes from the wafer 30, the polishing member 41. The guide device 170 (guide ball 180) supports the protruding portion of the (polishing pad 42) from the wafer 30 so that the uneven load of the polishing member 41 can be received by the guide device 170 (the polishing member 41 is removed from the wafer 30). It is possible to improve the uniformity (flatness) in the vicinity of the edge portion (outer peripheral portion) of the wafer 30. Thereby, like the CMP apparatus 1 of the first embodiment, it can be expected that the edge exclusion is reduced.

  Further, each guide ball 180 of the guide device 170 is rotatably held in an arbitrary direction (360 degrees), so that each guide ball 180 receives a rotational force of the polishing member 41 (polishing pad 42) (polishing pad). (So as to release the rotational force of 42). For this reason, each guide ball 180 abuts on the polishing surface of the polishing pad 42, so that no great resistance is generated against the rotational movement of the polishing pad 42, and the polishing pad 42 can be prevented from being twisted. . Thereby, damage given to the polishing pad 42 due to friction with the guide ball 180 or the like can be reduced, and processing accuracy in polishing the wafer 30 can be improved.

  Further, since the guide ball 180 is rotated (rotated) by the rotational force of the polishing member 41 (polishing pad 42) and supports the protruding portion of the polishing pad 42 from the wafer 30, only a part of the guide ball 180 is concentrated. Therefore, the life of the guide ball 180 can be extended. For this reason, the replacement frequency due to wear of the guide ball 180 is reduced and the maintainability is improved, and the guide ball 180 can stably support the protruding portion of the polishing pad 42 from the wafer 30 with accuracy over a long period of time. Become.

  Further, since the guide device 170 is disposed so as to surround the periphery of the wafer 30, even if the polishing head 40 is swung over a wide range in the XY direction (in the horizontal plane), the protruding portion of the polishing pad 42 from the wafer 30 is not affected. Since the guide device 170 can support, the flatness in polishing of the wafer 30 can be further improved.

  Then, according to the CMP apparatus 101 including the wafer holding apparatus 150 having the above configuration, the wafer 30 can be uniformly polished, and the processing accuracy and yield of the wafer 30 can be improved.

  In the above-described embodiment, the diameter of the polishing pad 42 is smaller than the diameter of the wafer 30, but is not limited to this, and the diameter of the polishing pad (polishing surface) is the wafer 30 (the surface to be polished 31). ) May be configured to be larger (as a conventional polishing apparatus).

  In the above-described embodiment, the guide device 170 is fixed on the table support portion 27 so as to surround the suction device 60 (and the wafer 30). However, the guide device 170 is not limited to this, and the guide device 170 is sucked. It is good also as a structure which attaches to an apparatus and rotates a guide apparatus integrally with an adsorption | suction apparatus by making the central axis of an adsorption | suction apparatus into a rotating shaft.

  In the above-described embodiment, the protruding portion of the polishing pad 42 from the wafer 30 is always supported at a constant pressure by causing the guide ball to float by the air pressure constantly supplied into the housing of the guide device. Also good.

  In the above-described embodiment, the example in which the holding device (wafer holding device) is provided and applied to the CMP apparatus which is an example of the polishing apparatus has been described. However, the present invention is not limited to this, and other processing apparatuses ( Flat polishing apparatus and the like, and other various processing apparatuses. Moreover, the to-be-held body of a holding | maintenance apparatus is not limited to a semiconductor wafer, You may comprise so that board | substrates (glass substrate etc.) other than a semiconductor wafer etc. may be hold | maintained. Furthermore, the method of holding the object to be held such as a semiconductor wafer by the holding device is not limited to vacuum suction using a vacuum source, but a chuck having a plurality of claws for holding the peripheral part of the object to be held, etc. It is good also as a structure hold | maintained by.

It is a front view which shows the CMP apparatus which is an example of the grinding | polishing apparatus provided with the holding | maintenance apparatus of 1st Embodiment. It is a perspective view which shows the holding | maintenance apparatus of 1st Embodiment. It is a front view which shows the state which the wafer and the guide roller contact | abutted to the polishing pad. It is a front view which shows the modification of a holding | maintenance apparatus. It is a front view which shows the grinding | polishing apparatus provided with the holding | maintenance apparatus of 2nd Embodiment. It is a perspective view which shows the guide apparatus which comprises a part of holding | maintenance apparatus of 2nd Embodiment.

Explanation of symbols

1 CMP equipment (processing equipment, polishing equipment)
30 Semiconductor wafer (work piece) 31 Surface to be polished (surface to be processed)
42 Polishing member (working member) 50 Wafer holding device (holding device)
60 Adsorbing device (base member) 70 Guide device (supporting member)
80 Guide roller (rotating body, roller body) 81 Notch groove 90 Guide roller (rotating body, roller body)
101 CMP apparatus (second embodiment)
150 Wafer holding device (holding device) 170 Guide device (supporting member)
172 Free bearing 180 Guide ball (Rotating body, Sphere)

Claims (2)

A holding device used in a processing apparatus for processing a processing surface of a workpiece using a processing member,
A substantially disk-shaped base member for supporting the workpiece;
A portion of the processing member that protrudes from the processing surface when the processing member is flattened by being brought into contact with the processing surface while rotating the processing member while rotating the processing member. comprising of a support member comprising a plurality of rotating bodies which support at least a portion, and,
The rotating body is formed of a cylindrical roller body that is rotatable about a rotation axis extending along a plane including the surface to be processed, and is located on the processing member side in the peripheral surface portion of the roller body. A ridge line portion extending in the axial direction of the rotation shaft is located on the same plane as the processing surface so as to support at least a part of the protruding portion;
The plurality of roller bodies are arranged along the outer peripheral surface of the base member, and are rotatable around rotation axes that extend radially from the vicinity of the outer peripheral surface of the base member, respectively.
The roller body is provided with a notch groove having a predetermined depth shallower than the thickness of the workpiece on the peripheral surface portion . A holding device according to claim 1 ;
A polishing member capable of polishing the workpiece surface of the workpiece,
The polishing member is moved relative to the workpiece surface while contacting the workpiece surface to polish the workpiece surface of the workpiece, and the protruding portion of the polishing member protrudes from the workpiece to the surroundings. A polishing apparatus characterized in that the rotating body supports the rotating body.

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