JP5267691B2 - Coating and developing apparatus, method and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance throughput, when changing a heating treatment temperature of a second heating unit between a board of one lot A and a board of subsequent another lot B. <P>SOLUTION: When conveying a wafer W in the order of a temperature adjustment unit CPL2, a coating unit BCT, a heating unit LHP2, a temperature adjustment unit CPL3, a coating unit COT, a heating unit LHP3, and a cooling unit COL, after the last wafer A10 of the lot A is treated in the heating unit LHP3, the heating temperature of the unit LHP3 is changed. From the next conveying cycle of the conveying cycle in which the first wafer B1 of the lot B is conveyed to the temperature adjustment unit CPL3, wafers B heat-treated in the heating unit LHP2, subsequent to the first wafer B1, are successively filled in an evacuating unit BF2. Also, after the temperature of the heating unit LHP3 is changed, the wafers are conveyed so that the wafers B in the evacuating unit BF2 are successively conveyed to modules on the downstream side. <P>COPYRIGHT: (C)2012,JPO&amp;INPIT

Description

  The present invention relates to a coating and developing apparatus, a method and a coating and developing method for performing a resist solution coating process, a developing process after exposure, etc. on a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display). The present invention relates to a storage medium storing a program for implementing the above.

  In a manufacturing process of a semiconductor device or an LCD substrate, a resist pattern is formed on the substrate by a technique called photolithography. In this technique, for example, a resist solution is applied to a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) to form a liquid film on the surface of the wafer, and the resist film is exposed using a photomask, and then developed. This is performed by a series of steps to obtain a desired pattern.

  Such processing is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating / developing apparatus for applying or developing a resist solution. Here, as the resist pattern forming apparatus, for example, an apparatus disclosed in Patent Document 1 has been proposed. In this apparatus, for example, as shown in FIG. 15, a carrier 10 containing a large number of wafers W is carried into a carrier stage 11 of a carrier block 1A, and the wafer in the carrier 10 is delivered to a processing block 1B by a delivery arm 12. It is. Then, in the processing block 1B, the film is transported by the path of the first temperature control unit → the antireflection film forming unit → the first heating unit, and an antireflection film is formed on the surface of the wafer W.

  Next, the wafer W is transported by a route of the second temperature control unit → the coating unit → the second heating unit → the cooling unit, a resist film is formed on the surface of the antireflection film, and then exposed through the interface block 1C. It is conveyed to apparatus 1D. The wafer after the exposure processing is returned to the processing block 1B again, developed in the developing unit 13B, and returned to the original carrier 10. Although the antireflection film forming unit is not shown, this unit is provided on the lower side of the coating unit 13A and the developing unit 13B, for example.

  At this time, the first and second heating units, the first and second temperature control units, the cooling unit, the delivery stage, and the like are arranged in multiple stages on the shelf unit 14 (14a to 14c), and the wafer W is The wafer W is placed in the processing block 1B, such as each part of the antireflection film forming unit, the coating unit 13A, the developing unit 13, and the shelf units 14A to 14C, by the two transfer means 15A and 15B provided in the processing block B. It is designed to be transported between modules. Here, when the wafer W is subjected to the above-described processing, as described in Patent Document 1, for all the wafers W scheduled to be processed, the transfer is determined in advance to which module each is transferred. Transported according to schedule.

  By the way, in the above-described apparatus, the wafer A of the lot A, which is a set of a plurality of wafers of the same type dispensed from one carrier, and the wafer B of another subsequent lot B are transferred from the carrier block 1A to the processing block 1B. There is a case where the heat treatment temperature in the second heating unit is changed between the lot A and the lot B by continuously paying out and processing. Here, the heat treatment is performed, for example, by placing a wafer on a heating plate adjusted to a predetermined temperature, and the heat treatment temperature is changed by changing a set temperature of the heating plate.

In this case, conventionally, in changing the heat treatment temperature in the second heating unit, after the final wafer A10 of lot A is discharged from the carrier block 1A to the processing block 1B, the carrier block 1A of the first wafer B1 of lot B is then transferred. Stop paying out to processing block 1B,
After the final wafer A10 is processed in the second heating unit and transferred to the next unit, the change of the heat processing temperature of the second heating unit is started,
After the change of the heat treatment temperature of the second heating unit is completed, the wafer A and the wafer A and the wafer A in accordance with a transfer schedule for starting the delivery of the first wafer B1 of the lot B from the carrier block 1A to the processing block 1B Wafer B is being transferred.

  Accordingly, since the wafer B of the lot B is not loaded into the processing block 1B until the temperature change of the second heating unit is completed, the temperature of the second heating unit is being changed. Therefore, the processing in the processing block 1B cannot be performed on the wafer B. For this reason, if the time required for changing the heat treatment temperature of the second heating unit becomes long, the time during which the wafer B waits without being processed becomes long, leading to a decrease in throughput.

  By the way, in recent years, the throughput of the exposure apparatus has become faster, and the processing capability in accordance with the throughput of the exposure apparatus is also required in the coating and developing apparatus. For this reason, the present inventors arrange the area for storing the module before the exposure process and the area for storing the module after the exposure process vertically, and by providing the transfer means in each area, the load on the transfer means is increased. To improve the transport efficiency and thereby increase the throughput of the coating and developing apparatus. As described above, Patent Document 2 discloses a configuration in which an area for performing the coating process and an area for performing the developing process are arranged above and below, and a conveying unit is provided in each area.

  However, even in such a configuration, since the wafer W is transferred in accordance with the transfer schedule by the transfer means in each area, the heat treatment temperature after resist coating is set between the lot A and the lot B. When changing, there is a possibility that the same problem as described above may occur, but this point is not described in Patent Document 2.

JP 2004-193597 A Japanese Patent No. 3337677

  The present invention has been made under such circumstances, and an object of the present invention is to provide a substrate of one lot which is a set of a plurality of similar wafers discharged from one carrier, and another lot after that. It is an object of the present invention to provide a technique capable of improving the throughput when changing the heat treatment temperature of the second heating unit conveyed after the second coating unit with the substrate.

For this reason, the present invention provides a carrier block on which a carrier containing a plurality of substrates is placed, and has a delivery means for delivering the substrate to and from the carrier, and a coating film is formed on the substrate received from the delivery means And a processing block for performing development on the substrate after exposure, and an interface block provided on the opposite side of the processing block from the carrier block and connected to the exposure apparatus,
In the processing block, a first temperature control unit that adjusts the temperature of the substrate to the first temperature, a first application unit that applies the first coating liquid to the substrate, and a first heat treatment of the substrate by the substrate transfer means. A heating unit, a second temperature control unit for controlling the temperature of the substrate to a second temperature, a second coating unit for applying a second coating solution to the substrate, a second heating unit for heat-treating the substrate, and cooling the substrate In order of cooling units to be transported,
If the place where the substrate is placed is called a module, the order is reduced by sequentially transferring the order from the substrate in the downstream module to the subsequent module by the substrate transfer means based on a preset transfer schedule. By forming a state in which the substrate is located in the module downstream of the larger substrate, thereby executing one transfer cycle, after completing the transfer cycle, executing the next transfer cycle, In the coating and developing apparatus in which conveyance is performed,
Unit for transporting the substrate between these units along the first temperature control unit, the first coating unit, the first heating unit, and the transport path extending linearly from the carrier block side to the interface block side A pre-stage unit block having a substrate transport means for the block;
Unit for transporting the substrate between these units along the second temperature control unit, the second coating unit, the second heating unit, and the transport path extending linearly from the carrier block side to the interface block side A rear stage unit block provided with a substrate transport means for blocks, and laminated with respect to the front stage unit block,
Of the front unit block and the rear unit block stacked together, the floor of the upper unit block located above the lower unit block; and
For the stage group that is provided between the areas adjacent to the end of each conveyance path of the preceding unit block and the subsequent unit block and is disposed at a height position corresponding to each unit block, the unit block A stage group in which the substrate is transferred by the substrate transfer means;
A transfer mechanism provided for transferring the substrate between the stages of the stage group;
A retreat unit that constitutes a part of the stage group and can retreat a plurality of substrates;
After the last substrate of one lot, which is a set of a plurality of the same type of substrates discharged from one carrier, finishes the heat treatment in the second heating unit, the heat treatment temperature of the second heating unit is set. Means to change the temperature according to the substrate of the other lots that follow,
When the heat treatment temperature of the second heating unit is changed to a temperature corresponding to the substrate of another subsequent lot after the last substrate of the one lot finishes the heat treatment in the second heating unit. Until the change of the heat treatment temperature is completed, the first substrate of the subsequent other lot continues from the next transfer cycle of the transfer cycle in which the first substrate is transferred to the second temperature control unit. Regarding the substrate present in the first coating unit, the substrate heated by the first heating unit is sequentially filled in the retracting unit, and the substrate is not allowed to be unloaded from the first temperature control unit. after completion of the coating process in the first coating unit, to convey to the retracted unit after performing heat treatment at the first heating unit, and also the heat treatment temperature of the second heating unit In After changing the temperature depending on the substrate of a subsequent other lot, so as to convey the sequential downstream module substrate within said evacuation unit, and means for controlling the substrate transfer means, and
The second temperature control unit constitutes a part of the stage group and is arranged at a height position corresponding to the rear unit block .

  Here, in the case where a plurality of second temperature control units are provided, the substrate heated by the first heating unit following the top substrate is distributed to these second temperature control units. It shall mean the next substrate after the substrate.

  Further, the retracting unit may be provided so as to deliver the substrate by means of the substrate transport means of the unit block for forming the first coating film and the delivery means provided in the processing block. Furthermore, when two or more substrates of the subsequent other lots are retracted to the retracting unit, means for controlling the substrate transporting means to prohibit the unloading of the substrate from the first temperature control unit. The first temperature control unit may be provided when the transfer of the substrate of the subsequent other lot that has been evacuated to the evacuation unit to the downstream module of the evacuation unit is started. A means for controlling the substrate transfer means may be provided so as to start unloading the substrate from the apparatus.

  Here, the first coating unit may be a unit that applies a coating solution for an antireflection film to a substrate before coating a resist solution, and the second coating unit may be a unit that applies a resist solution to a substrate. it can. The first coating unit may be a unit that applies a resist solution to a substrate, and the second coating unit may be a unit that applies a coating solution for an antireflection film to a substrate coated with a resist solution.

In the coating and developing method of the present invention, a carrier block containing a plurality of substrates is placed on a carrier block provided with a delivery means for delivering a substrate to and from the carrier, and a substrate received from the delivery means. A processing block for forming a coating film and developing the exposed substrate, and an interface block provided on the opposite side of the processing block from the carrier block and connected to an exposure apparatus,
In the processing block, a first temperature control unit that adjusts the temperature of the substrate to the first temperature, a first application unit that applies the first coating liquid to the substrate, and a first heat treatment of the substrate by the substrate transfer means. A heating unit, a second temperature control unit for controlling the temperature of the substrate to a second temperature, a second coating unit for applying a second coating solution to the substrate, a second heating unit for heat-treating the substrate, and cooling the substrate In order of cooling units to be transported,
If the place where the substrate is placed is called a module, the order is reduced by sequentially transferring the order from the substrate in the downstream module to the subsequent module by the substrate transfer means based on a preset transfer schedule. By forming a state in which the substrate is located in the module downstream of the larger substrate, thereby executing one transfer cycle, after completing the transfer cycle, executing the next transfer cycle, A coating and developing apparatus in which conveyance is performed,
Unit for transporting the substrate between these units along the first temperature control unit, the first coating unit, the first heating unit, and the transport path extending linearly from the carrier block side to the interface block side A pre-stage unit block having a substrate transport means for the block;
Unit for transporting the substrate between these units along the second temperature control unit, the second coating unit, the second heating unit, and the transport path extending linearly from the carrier block side to the interface block side A rear stage unit block provided with a substrate transport means for blocks, and laminated with respect to the front stage unit block,
Of the front unit block and the rear unit block stacked together, the floor of the upper unit block provided above the lower unit block;
For the stage group that is provided between the areas adjacent to the end of each conveyance path of the preceding unit block and the subsequent unit block and is disposed at a height position corresponding to each unit block, the unit block A stage group in which the substrate is transferred by the substrate transfer means;
A transfer mechanism provided for transferring the substrate between the stages of the stage group;
Comprising a part of the stage group, and a retracting unit capable of retracting a plurality of substrates ,
The second temperature control unit uses a coating and developing device that constitutes a part of the stage group and is disposed at a height position corresponding to the subsequent unit block .
For one lot which is a set of a plurality of the same type of substrates paid out from one carrier, performing a process of transporting the substrate based on the preset transport schedule and forming a coating film;
A step of changing a heat treatment temperature of the second heating unit to a temperature corresponding to a substrate of another lot after the last substrate of the one lot finishes the heat treatment in the second heating unit; ,
Until the change of the heat treatment temperature is completed, the first substrate following the first substrate from the next transfer cycle of the transfer cycle in which the first substrate of the subsequent other lot is transferred to the second temperature control unit. As for the substrate existing in the first coating unit, the substrate heated by the heating unit is sequentially filled in the retracting unit, and unloading of the substrate from the first temperature control unit is prohibited. After finishing the coating process in the first coating unit, the heating process is performed in the first heating unit and then transferred to the retracting unit, and the heating process temperature of the second heating unit is followed. After changing to a temperature corresponding to the substrate of another lot, the transfer schedule is rewritten so that the substrate in the retreat unit is sequentially transferred to the downstream module. And the extent,
A process of transporting the substrate and forming a coating film on the other lot based on the rewritten transport schedule.

    Still another invention is a coating and developing apparatus for forming a coating film on a substrate received from a carrier block on which a carrier containing a plurality of substrates is placed in a processing block and developing the exposed substrate. A computer-readable storage medium storing a computer program used in the above-mentioned program, wherein the program includes a group of steps so as to execute the coating and developing method of the present invention.

  As described above, according to the present invention, the substrate is transported after the second coating unit between a substrate of one lot that is a set of a plurality of the same type of substrates discharged from one carrier and a substrate of another subsequent lot. When changing the heat treatment temperature of the second heating unit, the throughput can be improved.

  First, a resist pattern forming apparatus according to an embodiment of a coating and developing apparatus of the present invention will be described with reference to the drawings. FIG. 1 shows a plan view of an embodiment of the apparatus, FIG. 2 is a schematic perspective view thereof, and FIG. 3 is a schematic side view thereof. This apparatus is configured by vertically arranging a carrier block S1 for carrying in / out a carrier 20 in which, for example, 13 wafers W, which are substrates, are hermetically stored, and a plurality of, for example, four unit blocks B1 to B4. A processing block S2, an interface block S3, and an exposure apparatus S4 are provided.

  In the carrier block S 1, a mounting table 21 on which a plurality of the carriers 20 can be mounted, an opening / closing part 22 provided on a front wall as viewed from the mounting table 21, and a wafer from the carrier 20 via the opening / closing part 22. A transfer arm C serving as a delivery means for taking out W is provided. The transfer arm C can move forward and backward, move up and down, and move around a vertical axis so as to transfer the wafer W between a temperature control unit CPL2 of the unit block B2 to be described later and the transfer stages TRS11 and TRS12 of the unit block B1. It is configured to be rotatable and movable in the arrangement direction of the carriers 20.

  A processing block S2 surrounded by a casing 24 is connected to the back side of the carrier block S1. In this example, the processing block S2 is, from below, a first unit block (DEV layer) B1 for performing development processing, and an antireflection film (hereinafter referred to as “first antireflection coating” formed on the lower layer side of the resist film). A second unit block (BCT layer) B2 for performing a film forming process), a third unit block (COT layer) B3 for performing a resist film forming process, and an upper layer side of the resist film. Is assigned as a fourth unit block (TCT layer) B4 for forming an antireflection film (hereinafter referred to as “second antireflection film”), and each of the unit blocks B1 to B4 is partitioned. ing. The second to fourth unit blocks B2 to B4 correspond to unit blocks for forming a coating film.

  Each of these unit blocks B1 to B4 is configured in the same manner, and a liquid processing unit for applying a coating liquid to the wafer W, and a pre-processing and a post-processing for processing performed in the liquid processing unit. Various processing units such as a heating unit and a temperature control unit, and main arms A1 to A4 which are dedicated substrate transfer means for delivering the wafer W between the liquid processing unit and the various processing units, And the arrangement layout of the liquid processing unit, the heating unit, the temperature control unit, and the main arms A1 to A4 is the same among the unit blocks B1 to B4. Here, the same arrangement layout means that the centers on which the wafers W are placed in the respective processing units and the main arms A1 to A4 are the same.

  Further, in the area adjacent to the carrier block S1 of each of the unit blocks B1 to B4, as shown in FIGS. 1 and 3, a shelf unit U2 is provided at a position where the transfer arm C and the main arms A1 to A4 can be accessed. ing. The shelf unit U2 is provided with a first delivery unit for delivering the wafer W to and from other unit blocks, for example, for each unit block, and the delivery unit is configured to be movable back and forth and up and down. The transfer arm D serving as a means is configured to transfer the wafer W to each transfer unit provided in the shelf unit U2. Furthermore, in the area adjacent to the interface block S3 of the DEV layer B1, a shelf unit U3 is provided at a position accessible by the main arm A1 of the DEV layer B1, as shown in FIGS. U3 includes a second transfer unit for transferring the wafer W to / from an interface block S3 described later.

  On the other hand, an exposure apparatus S4 is connected to the back side of the shelf unit U3 in the processing block S2 via an interface block S3. In the interface block S3, the wafer W is transferred to and from the second transfer section of the shelf unit U3 of the DEV layer B1 and the exposure apparatus S4. A configured interface arm F is provided.

  Next, the configuration of the unit blocks B1 to B4 will be described with reference to FIGS. 3 to 5 by taking the COT layer B3 as an example. Near the center of the COT layer B3, a transfer region R1 for the wafer W is formed in the length direction of the COT layer B3 (Y direction in FIG. 1). On both sides of the transport region R1 viewed from the carrier block S1 side, a plurality of resist solutions are applied as the liquid processing unit on the right side from the near side (carrier block S1 side) to the back side. An application unit 31 including an application processing unit is provided.

  In this example, the coating unit 31 includes three coating processing units 32A to 32C arranged in a common processing container 30 and arranged in the Y direction so as to face the transport region R1. Each of the coating processing units 32 </ b> A to 32 </ b> C supplies, for example, a resist solution that is a coating solution from a common chemical solution nozzle to a wafer W that is horizontally adsorbed and held on a spin chuck, and rotates the wafer W to rotate the resist. The liquid is spread over the entire surface of the wafer W, and thus the resist liquid is applied to the surface of the wafer W. Each of the coating processing units 32A to 32C includes a cup surrounding the periphery of the wafer W held on the spin chuck. The processing container 30 includes transfer ports 33A to 33C (see FIG. 5) for wafers W at positions corresponding to the coating processing units 32A to 32C, and the wafers W correspond to the transfer ports 33A to 33C. The coating processing units 32A to 32C and the main arm A3 are transported.

  Further, a shelf unit U1 in which processing units are provided in, for example, 2 stages × 4 rows is provided on the side of the coating unit 31 facing the conveyance region R1, and in this drawing, before the processing performed in the coating unit 31 is performed. Various processing units are provided for performing processing and post-processing. Among the various processing units described above, the heating unit LHP3 that performs the heat treatment on the wafer W after the application of the resist solution and the wafer W that has been heat-treated by the heating unit LHP3 are cooled to a predetermined temperature. A cooling unit COL3, a temperature adjustment unit CPL3 for adjusting the temperature of the wafer W to a predetermined temperature, a hydrophobic treatment unit ADH, a peripheral exposure apparatus (WEE), and the like.

  The heating unit LHP3 includes, for example, a heating plate 34 for placing and heating the wafer W thereon and a cooling plate 35 that also serves as a transfer arm, and is provided between the main arm A3 and the heating plate 34. An apparatus having a configuration in which the transfer of the wafer W is performed by the cooling plate 35, that is, the heating and cooling can be performed by one unit is used. Moreover, as temperature control unit CPL3 and cooling unit COL3, the apparatus provided with the cooling plate cooled, for example by a water cooling system is used. Each unit such as the heating unit LHP3 and the temperature control unit CPL3 is housed in a processing container 36 as shown in FIG. 5, and a wafer loading / unloading port 37 is provided on the surface of each processing container 36 facing the transfer region R1. Is formed.

  On the shelf unit U2 of the COT layer B3, a retreat unit BF3 for retreating a plurality of wafers W and a temperature control unit CPL3 for adjusting the wafer temperature to a predetermined temperature are stacked as the first delivery unit. The retraction unit BF3 and the temperature control unit CPL3 are configured such that the main arm A3 and the transfer arm D of the COT layer B3 can access the retreat unit BF3 and the temperature control unit CPL3. The evacuation unit BF3 includes a plurality of, for example, coating processing units 32A to 32C for mounting and accommodating the number of wafers W corresponding to the number of wafers W accommodated in the unit block A3 provided with the evacuation unit BF3. There are four mounting stages 41 to 44 that are one more than the above, and four wafers W can be retracted. In this example, a plurality of, for example, three protrusions that hold the back side of the wafer W are not placed on the mounting stages 41 to 44 when the main arm A3 and the transfer arm D enter the mounting stages 41 to 44. Is formed.

  Next, the main arm A3 provided in the transfer region R1 will be described. The main arm A3 is used to transfer wafers between all modules in the COT layer B3 (where the wafer W is placed), for example, each processing unit of the shelf unit U1, the coating unit 31, and each transfer unit of the shelf unit U2. For this purpose, it is configured to be able to move forward and backward, move up and down, rotate around the vertical axis, and move in the Y-axis direction.

  As shown in FIGS. 3 to 5, the main arm A3 includes two holding arms 51 and 52 for supporting the peripheral area on the back surface side of the wafer W. The holding arms 51 and 52 are bases. 53 is configured to be movable forward and backward independently of each other. Further, the base 53 is provided on the transport base 55 via the rotation mechanism 54 so as to be rotatable around the vertical axis. In the figure, 56 is a guide rail 56 extending in the length direction (Y direction in FIG. 1) of the transport region R1, 57 in the figure is a lifting guide rail, and the transport base 55 is along the lifting guide rail 57. And can be moved up and down. The lower end portion of the elevating guide rail 57 is locked under the guide rail 56, and the elevating guide rail 57 moves laterally along the guide rail 56, so that the conveying base 55 is conveyed. The region R1 can be moved in the horizontal direction. Here, the elevating guide rail 57 is displaced from the position where the holding arms 51 and 52 are advanced and retracted so as not to interfere with the holding arms 51 and 52 when the wafer W is transferred to each processing unit of the shelf unit U1. It is provided on the transport base 55 at the above position.

  The other unit blocks will be briefly described. All of the unit blocks B2 to B4 for forming the coating film are configured in the same manner, and the BCT layer B2 is the first liquid processing unit with respect to the wafer W. A first antireflection film forming unit BCT for supplying the coating liquid for forming the antireflection film and forming the first antireflection film is provided, and the shelf unit U1 is provided with the antireflection film forming process. A heating unit LHP2 for performing a heat treatment by placing the wafer W on a heating plate, a temperature adjustment unit CPL2 for adjusting the wafer W to a predetermined temperature, a cooling unit COL2, and the like are provided. Further, the shelf unit U2 has a retreat unit BF2 that retreats a plurality of, for example, four wafers W as a first delivery unit, and adjusts the wafers W to a predetermined temperature, and the wafers W between the carrier block S1. The temperature control unit CPL2 also used for delivery of the wafer W is provided, and the wafer W is delivered between the modules by the main arm A2.

  Further, the TCT layer B4 serves as a liquid processing module to supply a coating liquid for forming a second antireflection film to the wafer W to form a second antireflection film for forming the second antireflection film. A unit TCT is provided, and the shelf unit U1 is provided with a heating unit LHP4 for performing the heat treatment by placing the wafer W after the antireflection film formation processing on the heating plate, and a cooling unit COL4 for cooling the heated wafer W. And a temperature control unit CPL4 for adjusting the wafer W to a predetermined temperature, a peripheral exposure apparatus WEE, and the like. Further, the shelf unit U2 is provided with a wafer W transfer stage TRS4 and a temperature control unit CPL4 as a first transfer unit, and the wafer W is transferred between the modules by the main arm A4. ing.

  In addition, as shown in FIGS. 1, 3 and 6, the DEV layer B1 has a shelf unit U1 configured in 3 stages × 4 rows, includes a shelf unit U3, and is provided with a shuttle arm E. The COT layer B3 is configured in substantially the same manner, and as the liquid processing module, development units 32 for performing development processing on the wafer W are provided in two stages, and the shelf unit U1 includes a post-exposure unit. A heating unit (PEB1) called a post-exposure baking unit for heating the wafer W, a cooling unit (COL1) for adjusting the wafer W to a predetermined temperature after processing in the heating unit (PEB1), and development processing A heating unit (POST1) called a post-baking unit that heats the subsequent wafer W to remove moisture, and this heating Temperature control unit (CPL1) or the like for adjusting the wafer W after the processing in the knit (POST1) to a predetermined temperature is included. The first and second antireflection film forming units and the developing unit 32 are configured in substantially the same manner as the coating unit 31.

  Further, the shelf unit U2 is provided with a temperature control unit CPL11 on the upper stage side as a first delivery section, and for example, two delivery stages TRS11 and 12 are provided on the lower stage side thereof. Further, the shelf unit U3 is provided with a temperature adjustment unit CPL12 as a second delivery section at a position facing the temperature adjustment unit CPL11 of the shelf unit U2 across the conveyance region R1, and two lower adjustment units, for example, two on the lower stage side. Delivery stages TRS13 and TRS14 are provided. The delivery stages TRS11 and 12 of the shelf unit U2 are used for delivery of the wafer W to and from the carrier block S1, and the delivery stages TRS13 and 14 of the shelf unit U3 are wafers to and from the interface block S3. It is used for delivery of W.

  As shown in FIGS. 1, 3 and 6, the shuttle arm E is located between the temperature control unit CPL11 of the shelf unit U2 and the temperature control unit CPL12 of the shelf unit U3, for example, in the upper space in the DEV layer B1. This is a dedicated transfer means for transferring the wafer W. As shown in FIG. 6, the shuttle arm E includes a single holding arm 61 that supports the peripheral region on the back surface side of the wafer W and advances and retreats along the base 62. In addition, it is provided on the transport base 64 so as to be rotatable around the vertical axis via a rotation mechanism 63. The transport base 64 has, for example, the length of the transport region R1 on the surface facing the transport region R1 of the support member 66 provided along the length direction (Y direction in the drawing) of the shelf unit on the upper side of the shelf unit U1. It is configured to move in the length direction along the guide rail 65 provided so as to extend in the vertical direction, thus accessing the temperature control unit CPL11 of the shelf unit U2 and the temperature control unit CPL12 of the shelf unit U3. The wafer W is transferred between these units.

  In such a resist pattern forming apparatus, the flow of the wafer W will be briefly described with reference to FIG. 7, taking as an example the case where a first antireflection film and a resist film are formed as a coating film. First, the wafer W in the carrier 20 carried into the carrier block S1 from the outside is transferred to the BCT layer B2 by the transfer arm C via the temperature control unit CPL2 of the shelf unit U2, and the main arm A2 → first antireflection. The first antireflection film is formed by transporting the film forming unit BCT, the main arm A2, and the heating unit LHP2.

  Subsequently, the wafer W of the heating unit LHP2 is applied by the main arm A2, for example, the placement stage 41 of the retracting unit BF2 of the shelf unit U2, the transfer arm D, the temperature control unit CPL3 of the shelf unit U2, and the main arm A3 of the COT layer B3. The resist film is formed on the first antireflection film by being transported through the path of unit COT → main arm A3 → heating unit LHP3 → main arm A3 → cooling unit COL3 → main arm A3 → edge exposure apparatus WEE.

  Next, the wafer W is transferred from the placement stage 41 of the retracting unit BF3 of the shelf unit U2 to the delivery arm D → the temperature adjustment unit CPL11 of the shelf unit U2 → the shuttle arm E → the temperature adjustment unit CPL12 of the shelf unit U3. Next, the wafer W is transferred to the exposure apparatus S4 via the interface arm F of the interface block S3, and a predetermined exposure process is performed.

  The wafer W after the exposure process is transferred to the DEV layer B1 through the interface arm F → the delivery stage TRS13 or TRS14 of the shelf unit U3 → the main arm A1, and in the DEV layer B1, the heating unit PEB1 → the cooling unit COL1 → The developing unit DEV → the heating unit POST1 → the temperature control unit CPL1 is conveyed in the order, and a predetermined developing process is performed. The wafer W thus developed is returned to the original carrier 20 placed on the carrier block S1 by the transfer arm C via the transfer stage TRS11 or TRS12 of the shelf unit U2.

  In this example, the temperature control unit CPL2 controls the temperature of the wafer W to the first temperature, the first antireflection film forming unit BCT is the first coating unit, the heating unit LHP2 is the first heating unit, The temperature control unit CPL3 corresponds to the temperature control unit that controls the temperature of the wafer W to the second temperature, the coating unit COT corresponds to the second coating unit, the heating unit LHP3 corresponds to the second heating unit, and the cooling unit COL3 corresponds to the cooling unit. .

  The resist pattern forming apparatus described above manages recipes of each processing unit, manages recipes of the transfer flow (transfer path) of the wafer W, processes in each processing unit, main arms A1 to A4, transfer arms C, A control unit 100 including a computer that performs drive control of the transfer arm D, shuttle arm E, and interface arm F is provided. The control unit 100 has a program storage unit made up of, for example, a computer program, and the program storage unit functions as an entire resist pattern forming apparatus, that is, for forming a predetermined resist pattern on the wafer W. A program made up of, for example, software having a group of steps (commands) is stored so that processing in each processing unit, transfer of the wafer W, and the like are performed. Then, by reading these programs to the control unit 100, the control unit 100 controls the operation of the entire resist pattern forming apparatus. The program is stored in the program storage unit while being stored in a storage medium such as a flexible disk, a hard disk, a compact disk, a magnetic optical disk, or a memory card.

  FIG. 8 shows the configuration of the control unit 100, which actually includes a CPU (central processing unit), a program, a memory, and the like. In the present invention, the wafers in the unit blocks B2 to B4 for forming a coating film are shown. Since there is a feature in the conveyance of W, here, a part of the constituent elements related to it will be explained as a block. In FIG. 8, reference numeral 70 denotes a bus. The bus 70 has a recipe storage unit 71, a recipe selection unit 72, a heat treatment temperature change unit 73, a transfer schedule change unit 74, a transfer control unit 75, main arms A <b> 1 to A <b> 4, and a transfer arm C. The transfer arm D and the second heating unit are connected.

  The recipe storage unit 71 is a part corresponding to the storage unit. For example, the transfer recipe in which the transfer route of the wafer W is recorded, and based on this transfer recipe, transfer all wafers W in a lot to which unit at which timing. For example, a transfer schedule that assigns an order to the wafer W, associates the order of the wafer W with each module and designates a transfer cycle, and sets transfer cycle data in time series. A plurality of recipes in which processing conditions and the like to be performed are recorded are stored. The recipe selection unit 72 is a part for selecting an appropriate one from the recipes stored in the recipe storage unit 71. For example, the number of wafers to be processed, the type of resist, the temperature at the time of heat processing, and the like can be input. .

  The heat treatment temperature changing unit 73 heats the last wafer A10 of one lot (hereinafter referred to as “lot A”), which is a set of a plurality of the same type of substrates delivered from one carrier, by the second heating unit. After finishing the processing, the second heating unit is a means for changing the heat processing temperature of the second heating unit to a temperature corresponding to the wafer B of another subsequent lot (hereinafter referred to as “lot B”). A command for changing the temperature of the heating plate 34 is output to the unit after the heating process in the heating unit of the last wafer A10 of the lot A is completed.

  The transfer schedule changing unit 74 is a case where the wafer A of the lot A and the wafer B of the subsequent lot B are continuously processed, and the heat processing temperature of the second heating unit of the lot B is When changing from the heat processing temperature of the 2nd heating unit of lot A, it is a means to change a conveyance schedule so that it may mention later.

  The transfer control unit 75 refers to the transfer schedule, and transfers the transfer arm C, the main arms A1 to A4, and the transfer arm D so as to transfer the wafer written in the transfer cycle data to the module corresponding to the wafer. This is a part that controls and executes the transfer cycle, and corresponds to a means for controlling the substrate transfer means.

  Subsequently, the operation of the present embodiment will be described. First, the operator selects a recipe before starting the processing on the wafer W as a substrate. Here, as described above, a first antireflection film is formed as a coating film, and a resist is formed thereon. A case where a film is formed will be described as an example. In this case, since there is a feature in the transfer path of the wafer W between the BCT layer B2 and the COT layer B3, the following description will be made focusing on the transfer path of the wafer W in the BCT layer B2 and the COT layer B3.

  At this time, in the BCT layer B2 and the COT layer B3, the wafer W is, as shown in FIG. 7, carrier block S1 → first temperature control unit CPL2 → first antireflection film unit BCT (first coating unit). → First heating unit LHP2 → Evacuation unit BF2 → Second temperature control unit CPL3 → Coating unit COT (second coating unit) → Second heating unit LHP3 → Cooling unit COL3 → Transport along the edge exposure apparatus WEE Is done.

  Then, as shown in FIG. 9, the operator first creates a recipe for forming a coating film including the first antireflection film and a resist film, with ten wafers A1 to A10 in lot A and the subsequent lot B. The ten wafers B1 to B10 are selected to be processed successively (step S1). Here, when the wafer A of the lot A and the wafer B of the subsequent lot B are continuously processed, the wafer is discharged from the carrier block S1 to the first temperature control unit CPL2. This is to be performed on the first wafer B1 of the lot B following the last wafer A10.

  When this recipe is selected, the transfer schedule of the lot A in FIG. 10 is selected for the lot A, and the control unit 100 outputs an instruction to each unit while referring to the transfer schedule, and the process for the wafer A is executed. (Step S2). In this transfer schedule, the wafer A in the lot A is subjected to the BCT layer B2 via the mounting stage 41 of the evacuation unit BF2 after the first heating process in the first heating unit LHP2 is completed through the above-described path. To the COT layer B3. Here, since the main arms A1 to A4 are provided with two or more arms, the main arms A2 and A3 are sequentially transferred from the wafer in the downstream module to the subsequent module. A state in which a small wafer is located in a module downstream of a wafer having a larger order is formed, thereby executing one transfer cycle, and after completing the transfer cycle, the process moves to the next transfer cycle. Are sequentially executed, the wafers A are sequentially transferred in the above-described path, and a predetermined process is performed.

  On the other hand, in step 3, an inquiry is made as to whether the heat treatment temperature in the second heating unit LHP3 of lot B is the same as the heat treatment temperature in the second heating unit LHP3 of lot A. Then, the wafer B is transferred and processed along the same transfer schedule as the wafer A, and if different, the process advances to step S5. In step S5, after the heating process in the second heating unit LHP3 for the last wafer A10 of the lot A is completed by the heating process temperature changing unit 73, the heating process temperature of the second heating unit LHP3 is set to the wafer of the lot B. The temperature is changed according to B, and then the process proceeds to step S6 where the transfer schedule changing unit 74 rewrites the transfer schedule as will be described later. Thereafter, the wafer B of the lot B along the rewritten transfer schedule. And carrying out the process (step S7).

  Next, the transfer schedule rewriting will be specifically described. As shown in the transfer schedule of the lot B in FIG. 10, the transfer cycle 15 in which the first wafer B1 of the lot B is transferred to the second temperature control unit CPL3. From the next transfer cycle 16, the wafer B2 heated by the first heating unit LHP2 following the leading wafer B1 is sequentially filled in the mounting stages 41 to 44 of the retreat unit BF2, and After the heat treatment temperature of the second heating unit LHP3 is changed to a temperature corresponding to the wafer B of the lot B, the wafers B2 to B5 in the retracting unit BF2 are sequentially transferred to the downstream module. Rewrite the schedule. At this time, the wafer B heated by the first heating unit LHP2 following the leading wafer B is different from the second temperature adjustment unit CPL3 when a plurality of second temperature adjustment units CPL3 are provided. The wafer B next to the wafer B distributed to the unit CPL3 is assumed.

More specifically,
(1) The wafer B1 from the second temperature control unit CPL3, which is a module upstream of the second coating unit COT, so that the first wafer B1 of the lot B is not transferred to the second coating unit COT. Stop the export of
(2) When there is only one second temperature control unit CPL3, the transfer destinations of the wafers B2 to B5 after the second wafer B2 of the lot B processed by the first heating unit LHP2 Change to each mounting stage 41-44 of BF2,
(3) When the two or more wafers B are retracted on the mounting stages 41 to 44 of the retracting unit BF2, the first coating unit BCT is not transferred so that the wafer B is not transferred to the first coating unit BCT. The unloading of the wafer B6 from the first temperature control unit CPL2 which is one upstream module of
(4) After changing the heat treatment temperature of the second heating unit LHP3, the second temperature control unit CPL3, which is a module upstream of the second coating unit COT, is used as the first wafer B1 of the lot B. Unload and start transport to the second coating unit COT,
(5) When the wafers B2 to B5 that have been evacuated to the evacuation unit BF2 start to decrease, the unloading of the wafer B6 from the first temperature control unit CPL2 is resumed,
(6) For the wafers B6 to B10 after the last wafer B6 delivered to the first temperature control unit CPL2 in (3), the first heating is performed according to the same schedule as the transfer schedule of the wafer A. The transfer schedule is rewritten so that the unit LHP2 → the retreat unit BF2 is placed and transferred to the stage 41 → second temperature control unit CPL3.

  In such a resist pattern forming apparatus, the wafers A1 to A10 of the lot A and the wafers B1 to B10 of the subsequent lot B are successively processed in the processing block S2, and the wafer A1 of the lot A is processed. Even when the heat treatment temperature in the second heating unit LHP3 is changed between the process for .about.A10 and the process for wafers B1 to B10 of lot B, the wafer B of lot B The next transport destination of one heating unit LHP2 is rewritten to the evacuation unit BF2, and after the heat treatment temperature is changed in the second heating unit LHP3, it is immediately transported to the second coating unit (coating unit COT). Therefore, after the change of the heat treatment temperature of the second heating unit LHP3 is finished, As compared with the conventional transfer schedule payout was gone from the rear block S1, the processing time is shortened, it is possible to improve the throughput.

  That is, FIG. 11 shows a conventional transfer schedule for the processing performed in the coating and developing apparatus shown in FIG. 15. In this way, conventionally, the heat treatment temperature of the second heating unit LHP3 is Since the transfer from the carrier block S1 to the first temperature control unit CPL2 is performed on the wafers B1 to B10 of the lot B in the transfer cycle 28 after the change is completed, the temperature of the second heating unit LHP3 In addition to the change time, a time during which the wafer B of the lot B is not transferred is added to the second heating unit LHP3 after the temperature change, and the first wafer B1 of the lot B is added to the second heating unit LHP3 after the temperature change. The waiting time until the transfer is as long as 5 cycles, and the total number of transfer cycles until the transfer to the edge exposure apparatus WEE is 44.

  On the other hand, in the present invention, as apparent from the transfer schedule of FIG. 10, the waiting time until the first wafer B1 of the lot B is transferred to the second heating unit LHP3 after the temperature change is one cycle. ing. As described above, in the present invention, while the temperature of the second heating unit LHP3 is being changed, the second temperature which is a module on the upstream side of the second coating unit LHP3 is applied to the wafer B of the lot B. The processing up to the tuning unit CPL3 can be completed. For this reason, generation of useless time such as waiting for the end of the temperature change of the second heating unit LHP3 without performing any processing on the wafer B of the lot B is suppressed, and the wafer B is transferred to the edge exposure apparatus WEE. Since the total number of transport cycles is 41, the processing time is shortened by a time corresponding to the number of transport cycles of 3 compared to the conventional case, and the throughput can be improved accordingly.

  At this time, in the present invention, the wafer W after being subjected to the heat treatment by the first heating unit LHP2 is put on standby by the retreat unit BF2, and during this retreat, the temperature of the wafer W is lowered, and the next second There is an effect that the time required for the temperature adjustment process in the second temperature adjustment unit CPL3 can be shortened. On the other hand, if the second temperature control unit CPL3 tries to make the retreat unit BF2 stand by for the temperature control processing of the wafer B, the temperature of the wafer B once temperature-adjusted during the retreat changes. Absent.

  As described above, in the present invention, the first coating unit performs the process of coating the resist solution on the wafer W, and the second coating unit is used to form the second antireflection film on the wafer W. It can also be applied to the case of performing a process of applying a liquid. The flow of the wafer W in this case will be briefly described with reference to FIG. 12. The wafer W is transferred from the carrier block S1 to the shelf unit U2 by the temperature control unit CPL2 → the transfer arm D → the first temperature control unit CPL3 by the transfer arm C. And is transferred to the COT layer B3 through a path of the main arm A3 → the first coating unit COT → the main arm A3 → the first heating unit LHP3 to form a resist film.

  Subsequently, the wafer W is transferred from the main arm A3 → the placement stage 41 of the retracting unit BF3 of the shelf unit U2 → the transfer arm D → the second temperature control unit CPL4 of the shelf unit U2, and then the main arm of the TCT layer B4. A4 → second antireflection film forming unit TCT (second coating unit) → main arm A4 → second heating unit LHP4 → main arm A4 → cooling unit COL4 → main arm A4 → transfer along the path of the edge exposure apparatus WEE Then, a second antireflection film is formed on the resist film. Next, the wafer W is transferred to the temperature control unit CPL11 of the shelf unit U2 by the transfer arm D via the transfer stage TRS4 of the shelf unit U2, and thereafter, the exposure apparatus S4 → DEV layer B1 → carrier block S1 in the path described above. It is conveyed by the route.

  In this case as well, the 10 wafers A1 to A10 of the lot A and the 10 wafers B1 to B10 of the subsequent lot B are processed continuously, and the second lot B When changing the heat treatment temperature of the heating unit LHP4 of the second heating unit LHP4 of the lot A from the heat treatment temperature of the second heating unit LHP4 of the lot A, the last wafer A10 of the lot A is changed to the second heating unit LHP4 by the heat treatment temperature changing unit 73. After the heat treatment is completed, the heat treatment temperature of the second heating unit LHP4 is changed to a temperature corresponding to the wafer B of the lot B, and the transfer schedule changing unit 74 moves the first wafer B1 of the lot B to the first temperature. The first heating unit LHP following the first wafer B1 from the next transfer cycle of the transfer cycle transferred to the second temperature control unit CPL4 After changing the heat treatment temperature of the second heating unit LHP4 to a temperature corresponding to the wafer B of the lot B so that the retreat unit BF3 is sequentially filled with the wafers B2 that have been heat-treated in step 1, The transfer schedule is rewritten so that the wafers B in the evacuation unit BF3 are sequentially transferred to the downstream module. Thereafter, the wafers W are transferred by the main arms A2 and A3 along the rewritten transfer schedule.

To rewrite the specific transport schedule,
(1) The wafer B1 from the second temperature adjustment unit CPL4, which is a module upstream of the second coating unit TCT, so that the first wafer B1 of the lot B is not transferred to the second coating unit TCT. Stop the export of
(2) Transfer destinations of wafers B2 to B5 after the second wafer B2 of lot B processed in the first heating unit LHP3 are placed on the mounting stages 41 to 44 of the retreat unit BF3 of the COT layer B3. change,
(3) When the two or more wafers B are evacuated to the mounting stages 41 to 44 of the evacuation unit BF3, the first coating unit COT is prevented from being transferred to the first coating unit COT. The unloading of the wafer B6 from the first temperature control unit CPL3 which is one upstream module of
(4) After changing the heat treatment temperature of the second heating unit LHP4, the second temperature control unit CPL4, which is a module upstream of the second coating unit TCT, is used for the first wafer B1 of the lot B. To start transporting to the second coating unit TCT,
(5) When the wafers B2 to B5 that have been evacuated to the evacuation unit BF3 start to decrease, the unloading of the wafer B6 from the first temperature control unit CPL3 is resumed,
(6) For the wafers B6 to B10 after the last wafer B6 delivered to the first temperature control unit CPL3 in (3), the first heating is performed according to the same schedule as the transfer schedule of the wafer A. The transport schedule is rewritten so that the unit LHP3 → the retreat unit BF3 is placed and the stage 41 → the second temperature control unit CPL4 is transported.

  Furthermore, the present invention can be applied to the case of cleaning the cup of the second coating unit. This example will be described by taking as an example the case where the first antireflection film forming unit BCT is used as the first coating unit, the coating unit COT is used as the second coating unit, and the wafer W is transferred along the path shown in FIG. To do. In this case, the 10 wafers A1 to A10 in the lot A and the 10 wafers B1 to B10 in the subsequent lot B are processed successively, and the second coating unit COT is used. After the processing is performed on all the wafers A1 to A10 in the lot A, when the cup of the second coating unit COT is cleaned, the second coating unit COT is applied to the last wafer A10 in the lot A. After performing the coating process, the cleaning process for the cup of the second coating unit COT is started.

And the transportation schedule is as shown in FIG.
(1) The wafer B1 from the second temperature adjustment unit CPL3, which is a module upstream of the second coating unit COT, so as not to transfer the first wafer B1 of the lot B to the second coating unit COT. Stop the export of
(2) The transfer destinations of the wafers B2 to B5 subsequent to the second wafer B2 of the lot B processed by the first heating unit LHP2 are changed to the mounting stages 41 to 44 of the retreat unit BF2 of the BCT layer B2. And
(3) When the two or more wafers B are retracted on the mounting stages 41 to 44 of the retracting unit BF2, the first coating unit BCT is not transferred so that the wafer B is not transferred to the first coating unit BCT. The unloading of the wafer B6 from the first temperature control unit CPL32 which is one upstream module of
(4) After the cup cleaning of the second coating unit COT is completed, the first wafer B1 of the lot B is unloaded from the second temperature control unit CPL3 which is a module upstream of the second coating unit COT. Then, the conveyance to the second coating unit COT is started,
(5) When the wafers B2 to B5 that have been evacuated to the evacuation unit BF2 start to decrease, the unloading of the wafer B6 from the first temperature control unit CPL2 is resumed,
(6) For the wafers B6 to B10 after the last wafer B6 delivered to the first temperature control unit CPL2 in (3), the first heating is performed according to the same schedule as the transfer schedule of the wafer A. The transfer schedule is rewritten so that the unit LHP2 → the evacuation unit BF2 is placed and transferred to the stage 41 → the second temperature control unit CPL3. Thereafter, the wafer B is transferred according to the rewritten transfer schedule.

  Even in the case where the cleaning process is performed in this way, the first wafer B1 of the lot B is transferred to the second temperature control unit CPL3 from the next transfer cycle after the transfer cycle, and the first wafer B1 following the first wafer B1 is transferred. The next transfer destination of the first heating unit LHP2 is rewritten to the evacuation unit BF2 so that the wafer B heated by the first heating unit LHP2 is sequentially filled in the evacuation unit BF2, and the second coating unit COT is rewritten. After the cleaning process is completed, the first wafer B1 of the lot B is immediately transferred to the second coating unit COT. Therefore, after the cleaning process of the second coating unit COT is completed, the lot B Compared with the conventional transfer schedule (see FIG. 14) in which the wafer B is discharged from the carrier block S1, the peripheral edge exposure apparatus Number of conveying cycles total until transport is reduced three cycles to WEE, this amount processing time is shortened, it is possible to improve the throughput.

  As described above, in the present invention, the first temperature control unit, the first application unit, the first heating unit, the second temperature control unit, the second application unit, and the second temperature control unit are included in the processing block. The first temperature control unit → first application unit → first heating unit → retraction unit → second temperature control unit can be applied to an apparatus including a heating unit, a cooling unit, and a retracting unit. The number, type, and layout of these units (modules) are not limited to the above-described embodiment as long as the wafer can be transferred through the path of the second coating unit, the second heating unit, and the cooling unit.

  In the above-described example, the transfer of the wafer W between the BCT layer B2 and the COT layer B3 or between the COT layer B3 and the TCT layer B4 is performed via one mounting stage of the evacuation units BF2 and BF3, respectively. The transfer stage for transferring the wafer W between the BCT layer B2 and the COT layer B3 or between the COT layer B3 and the TCT layer B4 is provided separately from the evacuation units BF2 and BF3. It may be.

  Furthermore, the number of unit blocks and the order of stacking are not limited to the above example, and the unit block for development processing may be two layers, or the unit block for coating film formation may be directed from the lower side to the upper side. You may arrange so that it may become a TCT layer, a COT layer, and a BCT layer in order. Alternatively, a unit block for forming a coating film may be disposed on the lower side, and a unit block for development processing may be disposed thereon. The present invention can also be applied to a coating and developing apparatus for processing a substrate such as a glass substrate (LCD substrate) for a liquid crystal display as well as a semiconductor wafer.

1 is a plan view showing an embodiment of a coating and developing apparatus according to the present invention. It is a perspective view which shows the said coating and developing apparatus. It is side part sectional drawing which shows the said application | coating and developing apparatus. It is a top view which shows the unit block of COT layer B3 in the said application | coating and image development apparatus. It is a perspective view which shows the application | coating unit of the said COT layer B3, a shelf unit, main arm A3, and a retracting unit. It is a perspective view which shows the developing unit, the shelf unit, the main arm A1, and the shuttle arm E of the unit block of the DEV layer B1 in the coating and developing apparatus. It is a side view for demonstrating the flow of the wafer W in the said application | coating and image development apparatus. It is a block diagram which shows an example of the control part in the said application | coating and developing apparatus. It is a flowchart for demonstrating the effect | action of the said application | coating and developing apparatus. It is explanatory drawing which shows an example of a conveyance schedule. It is explanatory drawing which shows an example of the conventional conveyance schedule. It is a side view for demonstrating the flow of the wafer W in the said application | coating and image development apparatus. It is explanatory drawing which shows an example of a conveyance schedule. It is explanatory drawing which shows an example of the conventional conveyance schedule. It is a top view which shows the conventional application | coating and developing apparatus.

W Semiconductor wafer 20 Carrier S1 Carrier block S2 Processing block S3 Interface block S4 Exposure apparatuses A1 to A4 Main arm C Transfer arm D Transfer arm E Shuttle arm F Interface arm BCT First antireflection film forming unit COT Coating unit TCT Second Antireflection film forming unit DEV developing units BF2, BF3 retracting units 41-44 mounting stage
100 Control Unit 73 Heating Process Changing Unit 74 Transport Schedule Changing Unit

Claims (7)

A carrier block containing a plurality of substrates is placed, a carrier block having a delivery means for delivering the substrate to and from the carrier, a coating film is formed on the substrate received from the delivery means, and after exposure A processing block for performing development on the substrate, and an interface block provided on the opposite side of the processing block to the carrier block and connected to an exposure apparatus;
In the processing block, a first temperature control unit that adjusts the temperature of the substrate to the first temperature, a first application unit that applies the first coating liquid to the substrate, and a first heat treatment of the substrate by the substrate transfer means. A heating unit, a second temperature control unit for controlling the temperature of the substrate to a second temperature, a second coating unit for applying a second coating solution to the substrate, a second heating unit for heat-treating the substrate, and cooling the substrate In order of cooling units to be transported,
If the place where the substrate is placed is called a module, the order is reduced by sequentially transferring the order from the substrate in the downstream module to the subsequent module by the substrate transfer means based on a preset transfer schedule. By forming a state in which the substrate is located in the module downstream of the larger substrate, thereby executing one transfer cycle, after completing the transfer cycle, executing the next transfer cycle, In the coating and developing apparatus in which conveyance is performed,
Unit for transporting the substrate between these units along the first temperature control unit, the first coating unit, the first heating unit, and the transport path extending linearly from the carrier block side to the interface block side A pre-stage unit block having a substrate transport means for the block;
Unit for transporting the substrate between these units along the second temperature control unit, the second coating unit, the second heating unit, and the transport path extending linearly from the carrier block side to the interface block side A rear stage unit block provided with a substrate transport means for blocks, and laminated with respect to the front stage unit block,
Of the front unit block and the rear unit block stacked together, the floor of the upper unit block located above the lower unit block; and
For the stage group that is provided between the areas adjacent to the end of each conveyance path of the preceding unit block and the subsequent unit block and is disposed at a height position corresponding to each unit block, the unit block A stage group in which the substrate is transferred by the substrate transfer means;
A transfer mechanism provided for transferring the substrate between the stages of the stage group;
A retreat unit that constitutes a part of the stage group and can retreat a plurality of substrates;
After the last substrate of one lot, which is a set of a plurality of the same type of substrates discharged from one carrier, finishes the heat treatment in the second heating unit, the heat treatment temperature of the second heating unit is set. Means to change the temperature according to the substrate of the other lots that follow,
When the heat treatment temperature of the second heating unit is changed to a temperature corresponding to the substrate of another subsequent lot after the last substrate of the one lot finishes the heat treatment in the second heating unit. Until the change of the heat treatment temperature is completed, the first substrate of the subsequent other lot continues from the next transfer cycle of the transfer cycle in which the first substrate is transferred to the second temperature control unit. Regarding the substrate present in the first coating unit, the substrate heated by the first heating unit is sequentially filled in the retracting unit, and the substrate is not allowed to be unloaded from the first temperature control unit. after completion of the coating process in the first coating unit, to convey to the retracted unit after performing heat treatment at the first heating unit, and also the heat treatment temperature of the second heating unit In After changing the temperature depending on the substrate of a subsequent other lot, so as to convey the sequential downstream module substrate within said evacuation unit, and means for controlling the substrate transfer means, and
The coating / developing apparatus, wherein the second temperature control unit constitutes a part of the stage group and is disposed at a height position corresponding to the subsequent unit block . The coating and developing apparatus according to claim 1, wherein the retracting unit is disposed at a height position corresponding to the preceding unit block . With regard to the substrate of the subsequent other lot that has been retracted to the retracting unit, when the transport from the retracting unit to the downstream module is started, the unloading of the substrate from the first temperature control unit is started. The coating and developing apparatus according to claim 1, further comprising means for controlling the substrate conveying means. The first coating unit is a unit for coating a coating solution for an antireflection film on a substrate before coating a resist solution, and the second coating unit is a unit for coating a resist solution on a substrate. The coating and developing apparatus according to any one of claims 1 to 3 . The first coating unit is a unit that applies a resist solution to a substrate, and the second coating unit is a unit that applies a coating solution for an antireflection film to a substrate coated with a resist solution. The coating and developing apparatus according to any one of claims 1 to 3 . A carrier block containing a plurality of substrates is placed, a carrier block having a delivery means for delivering the substrate to and from the carrier, a coating film is formed on the substrate received from the delivery means, and after exposure A processing block for performing development on the substrate, and an interface block provided on the opposite side of the processing block to the carrier block and connected to an exposure apparatus;
In the processing block, a first temperature control unit that adjusts the temperature of the substrate to the first temperature, a first application unit that applies the first coating liquid to the substrate, and a first heat treatment of the substrate by the substrate transfer means. A heating unit, a second temperature control unit for controlling the temperature of the substrate to a second temperature, a second coating unit for applying a second coating solution to the substrate, a second heating unit for heat-treating the substrate, and cooling the substrate In order of cooling units to be transported,
If the place where the substrate is placed is called a module, the order is reduced by sequentially transferring the order from the substrate in the downstream module to the subsequent module by the substrate transfer means based on a preset transfer schedule. By forming a state in which the substrate is located in the module downstream of the larger substrate, thereby executing one transfer cycle, after completing the transfer cycle, executing the next transfer cycle, A coating and developing apparatus in which conveyance is performed,
Unit for transporting the substrate between these units along the first temperature control unit, the first coating unit, the first heating unit, and the transport path extending linearly from the carrier block side to the interface block side A pre-stage unit block having a substrate transport means for the block;
Unit for transporting the substrate between these units along the second temperature control unit, the second coating unit, the second heating unit, and the transport path extending linearly from the carrier block side to the interface block side A rear stage unit block provided with a substrate transport means for blocks, and laminated with respect to the front stage unit block,
Of the front unit block and the rear unit block stacked together, the floor of the upper unit block provided above the lower unit block;
For the stage group that is provided between the areas adjacent to the end of each conveyance path of the preceding unit block and the subsequent unit block and is disposed at a height position corresponding to each unit block, the unit block A stage group in which the substrate is transferred by the substrate transfer means;
A transfer mechanism provided for transferring the substrate between the stages of the stage group;
Comprising a part of the stage group, and a retracting unit capable of retracting a plurality of substrates ,
The second temperature control unit uses a coating and developing device that constitutes a part of the stage group and is disposed at a height position corresponding to the subsequent unit block .
For one lot which is a set of a plurality of the same type of substrates paid out from one carrier, performing a process of transporting the substrate based on the preset transport schedule and forming a coating film;
A step of changing a heat treatment temperature of the second heating unit to a temperature corresponding to a substrate of another lot after the last substrate of the one lot finishes the heat treatment in the second heating unit; ,
Until the change of the heat treatment temperature is completed, the first substrate following the first substrate from the next transfer cycle of the transfer cycle in which the first substrate of the subsequent other lot is transferred to the second temperature control unit. As for the substrate existing in the first coating unit, the substrate heated by the heating unit is sequentially filled in the retracting unit, and unloading of the substrate from the first temperature control unit is prohibited. After finishing the coating process in the first coating unit, the heating process is performed in the first heating unit and then transferred to the retracting unit, and the heating process temperature of the second heating unit is followed. After changing to a temperature corresponding to the substrate of another lot, the transfer schedule is rewritten so that the substrate in the retreat unit is sequentially transferred to the downstream module. And the extent,
A process of transporting a substrate to form the coating film on the other lot based on the rewritten transport schedule, and a coating and developing method. A computer program used in a coating and developing apparatus for forming a coating film on a substrate received from a carrier block on which a carrier containing a plurality of substrates is placed in a processing block and developing the exposed substrate. A stored storage medium,
A storage medium, wherein the program includes a group of steps so as to execute the coating and developing method according to claim 6.

Images