JP5266205B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP5266205B2 JP5266205B2 JP2009504717A JP2009504717A JP5266205B2 JP 5266205 B2 JP5266205 B2 JP 5266205B2 JP 2009504717 A JP2009504717 A JP 2009504717A JP 2009504717 A JP2009504717 A JP 2009504717A JP 5266205 B2 JP5266205 B2 JP 5266205B2
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- solar cell
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- bypass diode
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- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011573 trace mineral Substances 0.000 description 3
- 235000013619 trace mineral Nutrition 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000006059 cover glass Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (13)
- 第1および第2の母線と、整流ダイオードシートを支持する共通基板とを含む太陽電池モジュールであって、前記整流ダイオードシートが少なくとも背面電極層、前面電極層、および前記背面電極層と前記前面電極層の間に配置された吸収層を含んでいて、前記整流ダイオードシートが第1および第2のシート部分に分割されていて、前記第1シート部分が、前記前面および背面電極層内に形成された前面および背面電極を各々有する1個以上の直列接続された太陽電池セルの第1の列を含み、前記第1列が前記第1および第2の母線に直列接続されていて、前記第2のシート部分が、前記前面および背面電極層内に形成された前面および背面電極を各々有する1個以上の直列接続されたバイパスダイオードの第2の列を含み、前記第2列が前記第1および第2の母線を介して前記第1列と逆並列構成で接続されている太陽電池モジュール。
- 前記第1および第2の母線が各々前面電極層より高い導電性を有する、請求項1に記載の太陽電池モジュール。
- 前記第1列が電流を発生できるように、前記第1および第2の母線を介して電気的負荷に接続されている、請求項1または2に記載の太陽電池モジュール。
- 前記背面電極層が前記前面電極層より高い導電性を有する、請求項1、2、または3に記載の太陽電池モジュール。
- 前記整流ダイオードシートが、前記前面電極層、前記背面電極層、および前記吸収層のうちの1つ以上に存在する1個以上の電気絶縁により、前記第1および第2のシート部分に分割されている、請求項1〜4のいずれか1項に記載の太陽電池モジュール。
- 前記第1列が第1の太陽電池セル部分列および第2の太陽電池セル部分列を含み、前記第2列が第1のバイパスダイオード部分列および第2のバイパスダイオード部分列を含んでいて、前記第1太陽電池セル部分列が1個以上の太陽電池セルを含み、前記第2太陽電池セル部分列が1個以上の太陽電池セルを含んでいて、これにより前記第1および第2太陽電池セル部分列が直列接続されていて、前記第1バイパスダイオード部分列が1個以上のバイパスダイオードを含み、前記第2バイパスダイオード部分列が1個以上のバイパスダイオードを含んでいて、これにより前記第1バイパスダイオードおよび第2バイパスダイオード部分列が直列接続され、これにより前記第1列と第2列が前記第1および第2の母線を介して逆並列構成で接続されていることに加え、前記第1太陽電池セル部分列が前記第1バイパスダイオード部分列と逆並列構成で接続され、前記第2太陽電池セル部分列が前記第2バイパスダイオード部分列と逆並列構成で接続されている、請求項1〜5のいずれか1項に記載の太陽電池モジュール。
- 前記第2太陽電池セル部分列内の1個の太陽電池セルの前記背面電極に直列接続されている前記第1太陽電池セル部分列内の1個の太陽電池セルの前面電極がまた、前記第2バイパスダイオード部分列内の1個のバイパスダイオードの前記前面電極に直列接続されている前記第1バイパスダイオード部分列内の1個のバイパスダイオードの前記背面電極に接続されている、請求項6に記載の太陽電池モジュール。
- 前記第1および第2太陽電池セル部分列と、前記第1および第2バイパスダイオード部分列が各々集積型電気的直列接続に直列接続されている、請求項6または7に記載の太陽電池モジュール。
- 前記集積型電気的直列接続が、前記前面電極層に存在する電気絶縁、前記背面電極層に存在する電気絶縁、および前記吸収層に設けられた開口部を含んでいて、これにより前記吸収層に設けられた前記開口部を貫通する導電材料が、前記前面電極層および背面電極層に接触している、請求項8に記載の太陽電池モジュール。
- 前記第1シート部分が前記共通基板上で前記第2シート部分よりも大きい表面積を覆う、請求項1〜9のいずれか1項に記載の太陽電池モジュール。
- 前記第2シート部分が、不透明材料のシールド層により少なくとも部分的に覆われている、請求項1〜10のいずれか1項に記載の太陽電池モジュール。
- 前記不透明材料が前記前面電極層より高い導電性を有する、請求項11に記載の太陽電池モジュール。
- 前記整流ダイオードシートが薄膜ダイオード構造を含んでいる、請求項1〜12のいずれか1項に記載の太陽電池モジュール。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06112588 | 2006-04-13 | ||
EP06112597 | 2006-04-13 | ||
EP06112597.7 | 2006-04-13 | ||
EP06112588.6 | 2006-04-13 | ||
PCT/EP2007/053450 WO2007118814A2 (en) | 2006-04-13 | 2007-04-10 | Solar module |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009533856A JP2009533856A (ja) | 2009-09-17 |
JP5266205B2 true JP5266205B2 (ja) | 2013-08-21 |
Family
ID=38537645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009504717A Active JP5266205B2 (ja) | 2006-04-13 | 2007-04-10 | 太陽電池モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100078057A1 (ja) |
EP (1) | EP2005474B1 (ja) |
JP (1) | JP5266205B2 (ja) |
ES (1) | ES2759526T3 (ja) |
WO (1) | WO2007118814A2 (ja) |
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KR20080021428A (ko) * | 2006-09-04 | 2008-03-07 | 엘지전자 주식회사 | 바이패스 다이오드를 포함하는 광기전력 변환장치 및 그제조방법 |
JP5498388B2 (ja) | 2007-10-15 | 2014-05-21 | エーエムピーティー, エルエルシー | 高効率太陽光電力のためのシステム |
US7919953B2 (en) | 2007-10-23 | 2011-04-05 | Ampt, Llc | Solar power capacitor alternative switch circuitry system for enhanced capacitor life |
JP2010074071A (ja) * | 2008-09-22 | 2010-04-02 | Sharp Corp | 集積型薄膜太陽電池およびその製造方法 |
WO2010057978A1 (en) * | 2008-11-20 | 2010-05-27 | Saphire Aps | High voltage semiconductor based wafer and a solar module having integrated electronic devices |
US20100147353A1 (en) * | 2008-12-15 | 2010-06-17 | Kishore Kamath | Integrated Shunt Protection Diodes For Thin-Film Photovoltaic Cells And Modules |
WO2010120315A1 (en) | 2009-04-17 | 2010-10-21 | Ampt, Llc | Methods and apparatus for adaptive operation of solar power systems |
CN102301491A (zh) * | 2009-06-10 | 2011-12-28 | 薄膜硅公司 | 光生伏打模块和制造具有多个半导体层堆叠的光生伏打模块的方法 |
WO2011049985A1 (en) | 2009-10-19 | 2011-04-28 | Ampt, Llc | Novel solar panel string converter topology |
EP2352171A1 (de) * | 2010-01-29 | 2011-08-03 | Saint-Gobain Glass France | Solarzellenanordnung und Dünnschichtsolarmodul, sowie Herstellungsverfahren hierfür |
WO2011139290A1 (en) * | 2010-05-07 | 2011-11-10 | Entech Solar, Inc. | Improved concentrating linear photovoltaic receiver and method for manufacturing same |
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TW201222841A (en) * | 2010-11-30 | 2012-06-01 | Ind Tech Res Inst | Solar cell module with current control and method of fabricating the same |
GB2486408A (en) | 2010-12-09 | 2012-06-20 | Solaredge Technologies Ltd | Disconnection of a string carrying direct current |
US9366714B2 (en) | 2011-01-21 | 2016-06-14 | Ampt, Llc | Abnormality detection architecture and methods for photovoltaic systems |
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KR101563851B1 (ko) | 2012-10-16 | 2015-10-27 | 솔렉셀, 인크. | 광기전 태양 전지 및 모듈의 모놀리식으로 집적된 바이패스 스위치를 위한 방법 및 시스템 |
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- 2007-04-10 JP JP2009504717A patent/JP5266205B2/ja active Active
- 2007-04-10 ES ES07727918T patent/ES2759526T3/es active Active
- 2007-04-10 US US12/296,617 patent/US20100078057A1/en not_active Abandoned
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WO2007118814A2 (en) | 2007-10-25 |
EP2005474B1 (en) | 2019-09-04 |
ES2759526T3 (es) | 2020-05-11 |
US20100078057A1 (en) | 2010-04-01 |
EP2005474A2 (en) | 2008-12-24 |
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