JP5249645B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for performing processing on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”). Regarding judgment of support status.

  2. Description of the Related Art Conventionally, a substrate processing apparatus that heats a substrate with flash light emitted from a flash lamp is known (for example, Patent Document 1). In the apparatus of Patent Document 1, the flashlight emitted from the flash lamp has extremely high energy. When this light is irradiated onto the substrate, only the substrate surface is heated in an extremely short time (several milliseconds or less), and only the substrate surface rapidly expands.

  As a result, when a heat treatment with a flash lamp is performed on a defective substrate having scratches or process defects, the substrate is cracked due to this thermal expansion, and the fragments of the substrate are scattered and scattered in the heat treatment chamber. Will occur.

  In order to solve such problems, conventionally, there is known a technique for determining whether a substrate is good or bad and performing heat treatment on a defective substrate before the heat treatment is performed. (For example, Patent Document 2). In the apparatus of Patent Document 2, the quality of the substrate is determined based on the reflected light spectrum of the reflected light reflected by the substrate.

JP 2004-186542 A JP 2007-292726 A

  However, even if the same substrate is used, the acquired reflected light spectrum is different, and as a result, it may not be possible to correctly determine whether the substrate is good or bad.

  Therefore, an object of the present invention is to provide a substrate processing apparatus that can favorably receive reflected light reflected by a substrate.

In order to solve the above problems, the invention of claim 1 is a substrate processing apparatus, wherein a processing unit that performs processing on a processing substrate to be processed, and the processing unit as viewed from a conveyance direction of the processing substrate An alignment unit that adjusts the rotational position of the processing substrate based on a reference position provided on the processing substrate, and a determination unit, and the alignment unit includes a first reference A stationary table for placing the substrate in a first horizontal position, a support unit provided on the stationary table and supporting a second substrate for comparison in a second horizontal position, and the light supplied from a light source. An irradiation unit for irradiating the table side; and a light receiving unit for receiving reflected light reflected on the stationary table side, wherein the first substrate is stationary on the upper surface of the stationary table, and the second substrate Is supported on the support portion while being separated from the upper surface of the stationary table. Are, the determination unit is reflected by the first substrate, a first reflected light received by the light receiving portion, it is reflected by the second substrate, and the second reflected light received by the light receiving portion Based on the above, the support status of the second substrate supported by the support portion is determined, and the support status of the second substrate with respect to the main surface of the first substrate placed on the upper surface of the stationary table is determined. It is characterized by being determined using the parallelism of the main surface as an index .

  Moreover, the invention of claim 2 is the substrate processing apparatus according to claim 1, wherein the alignment unit is further linked to the stationary table, and further includes a rotation driving unit that rotates the stationary table, The first and second reflected lights are received in a state where the first and second substrates are rotated, respectively.

  According to a third aspect of the present invention, in the substrate processing apparatus according to the second aspect, the size of the irradiation unit in the longitudinal direction is equal to or larger than the diameters of the first and second substrates, and the first and second The reflection area of the light reflected on the substrate intersects with the rotation axis of the stationary table, and the light receiving unit is reflected on the entire surface of the first and second substrates by rotating the stationary table approximately half a turn. The first and second reflected lights are received.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to the second aspect, the size of the irradiation unit in the longitudinal direction is not less than the radius of the first and second substrates, and the first and second The reflection area of the light reflected on the substrate intersects with the rotation axis of the stationary table, and the light receiving unit is reflected on the entire surface of the first and second substrates by rotating the stationary table substantially once. The first and second reflected lights are received.

  According to a fifth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fourth aspects, the diameter of the second substrate is equal to or larger than the diameter of the first substrate.

  According to a sixth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fifth aspects, each of the first and second substrates is a bare wafer.

  According to a seventh aspect of the present invention, in the substrate processing apparatus according to any one of the first to sixth aspects, the support portion is a plurality of support pins erected from the stationary table. To do.

  According to an eighth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, the first substrate is placed in an enclosed region surrounded by the plurality of support pins.

  The invention according to claim 9 is the substrate processing apparatus according to any one of claims 1 to 8, wherein the second substrate is formed of the alignment unit as viewed from the transport direction, like the processing substrate. It is carried into the alignment unit from the upstream side and carried out to the processing unit side.

  According to a tenth aspect of the present invention, in the substrate processing apparatus according to any one of the first to ninth aspects, the determination unit includes the first and second reflections reflected by the first and second substrates. The support status of the second substrate is determined based on a reflected light spectrum of light.

  The invention of claim 11 is the substrate processing apparatus of claim 10, wherein (i) the reflected light spectrum of the first reflected light reflected by the first substrate is a reference spectrum, and (ii) the In the case where the reflected light spectrum of the second reflected light reflected by the second substrate supported by the support unit is a comparison spectrum, the determination unit is configured to use the support unit based on the reference spectrum and the comparison spectrum. The support state of the second substrate supported by the substrate is determined, and the reference spectrum is measured every time the determination process by the determination unit is executed.

  The invention according to claim 12 is the substrate processing apparatus according to claim 11, wherein the determination unit obtains a sum of absolute differences of spectral intensities at respective wavelengths for the reference spectrum and the comparison spectrum, and the sum. Is within an allowable range, it is determined that the support state of the second substrate is good.

  Further, the invention of claim 13 is the substrate processing apparatus according to claim 11, wherein the determination unit obtains a reference sum as a sum of spectrum intensities at each wavelength for the reference spectrum, and each wavelength for the comparison spectrum. A comparison sum is obtained as a sum of spectrum intensities, and when the ratio between the reference sum and the comparison sum is within an allowable range, it is determined that the support state of the second substrate is good. .

  The invention according to claim 14 is the substrate processing apparatus according to claim 11, wherein the determination unit is configured such that the ratio of the spectrum intensity of the reference spectrum and the comparison spectrum at each wavelength is within an allowable range. It is determined that the second substrate is supported well.

  Further, the invention of claim 15 is the substrate processing apparatus according to any one of claims 10 to 14, wherein the determination unit is based on a spectrum in a partial wavelength range of the reflected light spectrum. The support status of the second substrate is determined.

  The invention according to any one of claims 1 to 15, wherein the first reflected light from the first substrate placed on the stationary table and the second reflected light from the second substrate supported by the support portion on the stationary table. Are received by the light receiving unit. If the first horizontal posture of the first substrate is different from the second horizontal posture of the second substrate due to the displacement of the mounting position of the support portion, the first reflected light reflected by the first substrate is different. And the degree of coincidence with the second reflected light reflected by the second substrate decreases. That is, it is possible to determine the support status of the substrate (second substrate and processing substrate) by the support unit from the degree of coincidence of the first and second reflected lights.

  Thereby, the user of the substrate processing apparatus can grasp the necessity of the support part adjustment based on the determination result, and can adjust the support part as necessary. Therefore, the light reception state of the reflected light received by the light receiving unit can be maintained satisfactorily, and the quality determination of the substrate based on the reflected light can be performed well. Moreover, the positioning accuracy of the rotational position of the processing substrate executed by the alignment unit can be maintained well.

  In particular, according to the second aspect of the invention, the first and second reflected lights can be received by rotating the first and second substrates. Thereby, the determination process of the support state of a board | substrate can use the 1st and 2nd reflected light reflected in the wide area | region on the 1st and 2nd board | substrate. Therefore, it is possible to more favorably determine the support status of the substrate by the support portion.

  In particular, in the invention according to claim 3, the reflection region of the light reflected by the first and second substrates is such that the size of the irradiation part in the longitudinal direction is not less than the diameter of the first and second substrates. It is set so that it intersects with the rotation axis of the stationary base. As a result, when light is continuously emitted from the irradiating unit while the stationary table is substantially half-rotated, the light receiving unit receives the first or second reflected light reflected on the entire surface of the first or second substrate. Can do. That is, the determination process can be executed by the first and second reflected lights reflected on the entire surface of the first and second substrates. Therefore, it is possible to more favorably determine the support status of the substrate by the support portion.

  Particularly, in the invention according to claim 4, the reflection region of the light reflected on the first and second substrates so that the size of the irradiation part in the longitudinal direction is not less than the radius of the first and second substrates. Is set to intersect with the rotation axis of the stationary table. Accordingly, when light is continuously emitted from the irradiation unit while the stationary table is rotated approximately once, the light receiving unit receives the first or second reflected light reflected on the entire surface of the first or second substrate. Can do. That is, the determination process can be executed with the first and second reflected lights reflected on the entire surface of the first and second substrates. Therefore, the support status of the substrate by the support portion can be determined more accurately.

  Particularly, in the invention described in claim 5, the diameter of the second substrate supported above the first substrate is set to be equal to or larger than the diameter of the first substrate, and the second substrate covers the first substrate. It can be arranged to hide. Thereby, the reflected light received in a state where the second substrate is supported by the support portion can be only the second reflected light. Therefore, the support status of the substrate by the support portion can be determined more accurately.

  In particular, in the invention described in claim 6, each of the first and second substrates is a bare wafer, and the degree of coincidence of the first and second reflected lights can be grasped better. Therefore, the support status of the substrate by the support portion can be determined more accurately.

  In particular, according to the seventh aspect of the present invention, the second substrate can be easily supported above the first substrate by the plurality of support pins.

  In particular, according to the eighth aspect of the present invention, the reference first substrate is placed in the surrounding region surrounded by the plurality of support pins. Therefore, the first substrate is easily fixed on the stationary table regardless of the standing positions of the plurality of support pins.

  In particular, according to the ninth aspect of the invention, the second substrate for comparison is carried into the alignment unit and carried out to the processing unit side by the same transport procedure as the processing substrate processed in the processing unit. Therefore, it is not necessary to construct a special transport procedure for determining the support status, and the number of steps related to the construction and management of the transport procedure can be reduced.

  In particular, according to the invention described in claim 11, the reference spectrum is measured every time the determination process is executed. As a result, even if the light emission status of the light source changes due to aging of the light source (for example, the luminous intensity decreases), each of the measured reference spectrum and comparative spectrum is affected by this change, and the determination is made. The result does not depend on the light emission state of the light source. Therefore, the determination unit can determine the support status of the substrate satisfactorily without being affected by the secular change of the light source.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. First Embodiment>
<1.1. Configuration of substrate processing apparatus>
FIG. 1 is a plan view showing an example of the configuration of the substrate processing apparatus 100 in the present embodiment. 1 and the subsequent drawings have an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane, as necessary, in order to clarify the directional relationship. .

  The substrate processing apparatus 100 is a single-wafer type substrate processing apparatus that emits very short light pulses from a xenon flash lamp and irradiates each substrate with extremely strong light to heat the substrates one by one. As shown in FIG. 1, the substrate processing apparatus 100 mainly includes an indexer unit 110, a delivery robot 120, an alignment unit 130, a cooling unit 140, a transfer robot 150, and a heat processing unit 160.

  Here, each board | substrate carried in to the indexer part 110 is conveyed along the conveyance path | route (path | route along the broken line in FIG. 1) P by the delivery robot 120 and the conveyance robot 150. FIG. That is, each board | substrate is delivered to the indexer part 110, the alignment part 130, the heat processing part 160, the cooling part 140, and the indexer part 110 in this order.

  The indexer unit 110 carries an unprocessed substrate into the substrate processing apparatus 100 and unloads the processed substrate out of the substrate processing apparatus 100. As shown in FIG. 1, a plurality (two in the present embodiment) of carriers 91 can be placed on the indexer unit 110. These carriers 91 can store a plurality of substrates and are transported from outside the apparatus 100 by an automatic guided vehicle (AGV: not shown) or the like.

  As shown in FIG. 1, the delivery robot 120 is provided on the downstream side of the indexer unit 110 when viewed from the substrate transport direction AR1. The delivery robot 120 is slidable in the direction of the arrow 120S (substantially in the Y-axis direction) and is rotatable in the direction of the arrow 120R. The hand 121 that supports the substrate can be advanced and retracted in the X-axis direction.

  As a result, the delivery robot 120 (1) places an arbitrary substrate in and out of the carrier 91, (2) delivers the substrate taken out from the carrier 91 to the alignment unit 130, and (3) cooling. The substrate that has been processed can be taken out of the cooling unit 140.

  As shown in FIG. 1, the alignment unit 130 is between the delivery robot 120 and the transfer chamber 170, and is seen from the transfer direction AR <b> 1 as a heating processing unit 160 and a cooling unit 140 (hereinafter, these are also referred to as “processing unit”). It is provided on the upstream side. The alignment unit 130 performs alignment processing on the substrate delivered from the delivery robot 120. Here, the alignment process refers to adjusting the rotational position of the substrate based on a reference position provided on the substrate.

  FIG. 2 is a cross-sectional view of alignment unit 130 according to the present embodiment as viewed from the line V1-V1 in FIG. FIG. 3 is a plan view illustrating an example of the configuration of the alignment unit 130 of the present embodiment. As shown in FIGS. 2 and 3, the alignment unit 130 mainly includes an alignment head 132, a stationary base 133, a plurality of support pins 134, an incident / exit unit 171, and a spectrometer 176. . In FIG. 3, the alignment chamber 131 is not shown for convenience of illustration.

  As shown in FIG. 2, the alignment chamber 131 mainly includes a housing 131 a having an opening upward and a bottomed cylindrical lid portion 131 b. When the opening of the housing 131a is blocked by the lid portion 131b, the alignment chamber 131 seals the processing substrate W to be subjected to alignment processing and pass / fail determination processing.

  The alignment head 132 includes a sensor (not shown) including a pair of light projecting units and light receiving units. A reference position such as a notch or orientation flat of the processing substrate W is detected by this sensor.

  The stationary table 133 includes a processing substrate W to be subjected to a cooling process performed by the cooling unit 140 and a heating process performed by the heat processing unit 160, a reference substrate W1 used in the substrate support status determination process, and This is a wafer stage on which a comparative substrate W2 is arranged. As shown in FIG. 2, the reference substrate W <b> 1 is placed on the upper surface of the placing base 133 in a first horizontal posture that is substantially parallel to the XY plane.

  Here, in the present embodiment, the support status of the substrate is determined using the parallelism of the main surface of the substrate with respect to the reference surface (for example, the parallelism of the upper surface of the comparison substrate W2 with respect to the upper surface of the stationary table 133) as an index. And

  A plurality of (three in the present embodiment) support pins 134 are support portions provided on the stationary table 133, and are erected from the upper surface of the stationary table 133 toward the incident / exit portion 171. The processing substrate W and the comparative substrate W2 are supported by the support pins 134 in a second horizontal posture substantially parallel to the XY plane. Therefore, the lower surface of the comparative substrate W2 is separated from the upper surface of the stationary table 133 and is easily supported above the reference substrate W1.

  In addition, a plurality of holes (not shown) are provided on the upper surface of the stationary base 133, and corresponding support pins 134 are fitted into these holes. Each support pin 134 is fixed to the stationary base 133 side by a screw tightening action.

  Therefore, a user (hereinafter, also simply referred to as “user”) of the substrate processing apparatus 100 (and substrate processing apparatuses 200 and 300 described later) adjusts screwing and supports pins 134 protruding from the upper surface of the stationary table 133. By adjusting the length, the support state of the processing substrate W and the comparative substrate W2 by the support pins 134 can be adjusted.

  Further, as shown in FIG. 3, the reference substrate W <b> 1 is placed in the surrounding area 134 a surrounded by the plurality of support pins 134. Therefore, the reference substrate W1 is easily fixed on the stationary table 133 regardless of the standing position of each support pin 134.

  The motor 135 is linked to the stationary table 133 through a rotating shaft 135a extending in the vertical direction (substantially Z-axis direction). Therefore, when the rotational force is transmitted from the motor 135, the stationary base 133 is rotated in the XY plane about the rotational axis 135b. As described above, the motor 135 has a function as a rotation driving unit that rotates the stationary table 133.

  FIG. 4 is a side sectional view schematically showing the configuration of the incident / exit section 171 of the present embodiment. The input / output unit 171 functions as an irradiation unit that irradiates the light supplied from the light source 171a to the stationary table 133 side, and the reflection reflected by the reference substrate W1 and the comparison substrate W2 disposed on the stationary table 133 side. Each has a function as a light receiving portion for receiving light. In other words, the incident / exit section 171 is configured by integrally forming an irradiation section and a light receiving section.

  As shown in FIG. 3, the incident / exit section 171 is separated from the alignment head 132 and is provided at a position where it does not interfere with the alignment head 132. Further, as shown in FIG. 2, both ends of the incident / exit portion 171 viewed from the longitudinal direction (substantially Y-axis direction in FIG. 2) are attached near upper portions of the support members 173a and 173b, respectively. Thereby, the incident / exit section 171 is arranged above the stationary table 133.

  As shown in FIG. 4, the incident / exit section 171 mainly includes a cylindrical lens 171 b and a half mirror 171 c. Each of the cylindrical lens 171b and the half mirror 171c extends along the longitudinal direction of the incident / exit section 171.

  The light source 171a is constituted by, for example, a halogen lamp. As shown in FIG. 4, the light supplied from the light source 171a is introduced into the main body 171e of the incident / exit section 171 via the optical fiber 171d.

  The light introduced into the main body portion 171e via the optical fiber 171d travels along the optical path LP11, passes through the half mirror 171c, and reaches the cylindrical lens (cylindrical lens) 171b. Then, the light supplied to the cylindrical lens 171b is condensed by the cylindrical lens 171b and is irradiated on the stationary table 133 side as a substantially linear light.

  Further, when the comparison substrate W2 is not supported by the plurality of support pins 134, the light emitted from the cylindrical lens 171b travels along the optical path LP11 and the optical path LP12, and the reflection region RR1 on the reference substrate W1. It is reflected by. On the other hand, when the comparison substrate W2 is supported by the plurality of support pins 134, it is reflected by the reflection region RR2 on the comparison substrate W2.

  Further, the reflected light (first reflected light) reflected by the reflective region RR1 on the reference substrate W1 travels along the optical paths LP21 and LP22, and is received and collected by the cylindrical lens 171b. On the other hand, the reflected light (second reflected light) reflected by the reflective region RR2 on the comparative substrate W2 travels along the optical path LP22 and is received by the cylindrical lens 171b.

  The reflected light received by the cylindrical lens 171b travels along the optical path LP22 in the main body 171e of the incident / exit section 171 and is reflected by the half mirror 171c to be introduced into the optical fiber 175.

  As shown in FIG. 2, the spectroscope 176 decomposes the reflected light (first or second reflected light) collected by the cylindrical lens 171b and introduced into the optical fiber 175 into each wavelength by a dispersion system (for example, a prism). In addition, the spectral intensity is measured for each wavelength. Thereby, a spectrum intensity-wavelength curve (hereinafter also referred to as “reflected light spectrum”) of the reflected light reflected by the reference substrate W1 or the comparison substrate W2 is obtained (for example, a solid line in FIGS. 7 and 8). SS1 and dashed lines CS1, CS2).

  The transfer robot 150 is provided in the transfer chamber 170 as shown in FIG. Further, the transfer chamber 170 is disposed between the alignment unit 130 and the cooling unit 140, and the heat treatment unit 160. The alignment unit 130, the cooling unit 140, and the heat treatment unit 160 are arranged so as to be connected to the transfer chamber 170 so that the respective inner spaces can communicate with the inner space of the transfer chamber 170. Thereby, the transfer robot 150 can transfer the processing substrate W and the comparative substrate W2 to and from the alignment unit 130, the cooling unit 140, and the heat processing unit 160.

  Here, the transfer robot 150 is capable of turning as indicated by an arrow 150R about a vertical axis (substantially parallel to the Z axis). The transfer robot 150 has two link mechanisms composed of a plurality of arm segments, and transfer arms 151a and 151b for holding the processing substrate W or the comparison substrate W2 are provided at the ends of the two link mechanisms, respectively. Yes. These transfer arms 151a and 151b are vertically spaced apart from each other by a predetermined pitch, and are independently slidable linearly in the same horizontal direction by a link mechanism. Further, the transfer robot 150 can be moved up and down while maintaining the pitch between the transfer arms 151a and 151b.

  Therefore, when the transfer robot 150 transfers (in / out) the processing substrate W or the comparison substrate W2 as a transfer partner of any of the alignment unit 130, the heat processing unit 160, and the cooling unit 140, first, both transfer is performed. The arm 151a, 151b turns so as to face the delivery partner. After that (or while turning), it moves up and down, and one of the transfer arms is positioned at a height at which the processing substrate W or the comparison substrate W2 is delivered to or from the delivery partner. Then, the transfer arm 151a (151b) is linearly slid in the horizontal direction to transfer the processing substrate W or the comparison substrate W2.

  FIG. 5 is a front view showing an example of the configuration of the heat treatment unit 160. The heat treatment unit 160 performs heat treatment on the surface of the processing substrate W by irradiating the processing substrate W with extremely strong light. Here, the processing substrate W to be heat-treated by the heat treatment unit 160 is one to which impurities are added by, for example, an ion implantation method, and the added impurities are activated by this heat treatment.

  As shown in FIG. 1, the heat treatment unit 160 is disposed on the opposite side of the alignment unit 130 and the cooling unit 140 across the transfer chamber 170, and as shown in FIG. , A light irradiation unit 5, a chamber 6, and a holding unit 7.

  As shown in FIG. 5, the light irradiation unit 5 is provided in the upper portion of the chamber 6, and mainly includes a plurality of (30 in the present embodiment) xenon flash lamps (hereinafter simply referred to as “flash lamps”). ) 69, the reflector 52, and the light diffusion plate 53.

  The plurality of flash lamps 69 are rod-shaped lamps each having a long cylindrical shape, and each of the flash lamps 69 is planar so that the longitudinal direction thereof is parallel to the main surface of the processing substrate W held by the holding unit 7. Is arranged.

  The reflector 52 is provided above the plurality of flash lamps 69 so as to cover all of them. In addition, the surface of the reflector 52 is roughened by blasting and has a satin pattern.

  Further, the light diffusion plate 53 is formed of quartz glass whose surface is subjected to light diffusion processing. As shown in FIG. 5, the light diffusion plate 53 is located between the light transmission plates 61 provided below the plurality of flash lamps 69. Have a predetermined gap. Thereby, the light emitted from the flash lamp 69 and incident on the light diffusion plate 53 is diffused by the light diffusion plate 53 and reaches the light transmission plate 61.

  The chamber 6 is a processing chamber having a substantially cylindrical shape, and the processing substrate W can be stored in an inner space (heat treatment space 65) thereof. A translucent plate 61 is provided in the opening 60 above the chamber 6.

  Here, the translucent plate 61 is made of, for example, quartz, and the translucent plate 61 functions as a chamber window that transmits light emitted from the light irradiation unit 5 and guides it to the heat treatment space 65. That is, the heat treatment unit 160 heat-treats the processing substrate W by flash light emitted from the flash lamp 69 passing through the light transmitting plate 61 and irradiating the processing substrate W.

  As shown in FIG. 5, the holding unit 7 mainly includes a hot plate 71 for preheating (so-called assist heating) the processing substrate W and a susceptor 72, and holds the processing substrate W to be heated. To do.

  The susceptor 72 is disposed so as to cover the upper surface (the surface on the processing substrate W side) of the hot plate 71, and is formed of quartz (or aluminum nitride (AIN) or the like). In addition, a pin 75 that prevents a displacement of the processing substrate W is provided near the upper periphery of the susceptor 72.

  Here, a corresponding support pin 70 is inserted into each of a plurality of (three in the present embodiment) through-holes 77 provided in the holding portion 7. The support pin 70 is made of, for example, quartz, and an end portion far from the holding portion 7 is fixed to the bottom portion 62 of the chamber 6 from the outside of the chamber 6 as shown in FIG. Therefore, the user can easily exchange each support pin 70.

  Further, as shown in FIG. 5, a shaft 41 is connected to the lower portion of the holding portion 7. The shaft 41 has a substantially cylindrical shape and can be moved up and down in the Z-axis direction by the holding unit lifting mechanism 4.

  As a result, when the shaft 41 is raised while the processing substrate W is supported by the plurality of support pins 70, the processing substrate W is lowered relative to the holding unit 7 and placed on the holding unit 7. Is done. On the other hand, when the shaft 41 is lowered while the processing substrate W is placed on the holding unit 7, the processing substrate W rises relative to the holding unit 7 and is separated from the holding unit 7.

  In addition, the heat processing by the heat processing part 160 of this Embodiment is performed with the following procedures. First, the holding unit 7 is lowered to the delivery position by the holding unit lifting mechanism 4. Next, room temperature nitrogen gas is introduced into the chamber 6, and the heat treatment space 65 is brought to a nitrogen gas atmosphere.

  Subsequently, when the gate valve 185 is opened, the processed substrate W on which the alignment processing has been completed is carried into the heating processing unit 160 from the transfer chamber 170 by the transfer robot 150 and supported by the support pins 70. When the transfer arm 151a of the transfer robot 150 moves backward from the chamber 6, the gate valve 185 is closed.

  Subsequently, when the processing substrate W is supported by the support pins 70, the holding unit 7 is raised to the processing position by the holding unit lifting mechanism 4. As a result, the processing substrate W supported by the support pins 70 is transferred to the susceptor 72 and placed and held thereon. The processing substrate W placed and held is preheated by the hot plate 71, and the temperature of the processing substrate W is a temperature at which impurities added to the processing substrate W are not likely to diffuse due to heat (preheating temperature). The temperature is raised to T1.

  Subsequently, when the holding unit 7 is raised to the processing position, flash light of a short light pulse is irradiated from the light irradiation unit 5 toward the processing substrate W. By this light irradiation, flash heating of the processing substrate W is performed. As a result, the surface temperature of the processing substrate W instantaneously rises rapidly to the processing temperature T2 of about 1000 ° C. to 1100 ° C., the impurities added to the processing substrate W are activated, and then the surface temperature rapidly increases. Descend. Therefore, it is possible to activate the impurities while suppressing the diffusion of the impurities added to the processing substrate W by heat (this diffusion phenomenon is also referred to as the profile of the impurities in the processing substrate W is reduced).

  When the flash heating is completed, the holding unit 7 is lowered again to the delivery position, and the processing substrate W is delivered to the support pins 70. Then, the gate valve 185 is opened, and the processing substrate W on the support pins 70 is unloaded by the transfer robot 150, whereby the heat processing in the heat processing unit 160 is completed.

  As shown in FIG. 1, the cooling unit 140 is provided between the delivery robot 120 and the transfer chamber 170 and on the downstream side of the transfer chamber 170 when viewed from the transfer direction AR1. The cooling unit 140 cools the processing substrate W that has been heated by the heat processing in the heat processing unit 160. The processing substrate W cooled by the cooling unit 140 is taken out of the cooling unit 140 by the delivery robot 120 and returned to the carrier 91 from the delivery robot 120 as a processed processing substrate W.

  Here, as shown in FIG. 1, the transfer chamber 170 is connected to the alignment unit 130, the cooling unit 140, and the heat treatment unit 160 through gate valves 183, 184, and 185, respectively. The alignment unit 130 and the cooling unit 140 are connected to the delivery robot 120 via gate valves 181 and 182, respectively. Therefore, when the processing substrate W or the comparative substrate W2 is transported, these gate valves are appropriately opened and closed. Further, the inner space of the alignment unit 130, the cooling unit 140, the heat processing unit 160, and the transfer chamber 170 becomes a sealed space by closing the corresponding gate valves 181 to 185.

  Further, high purity nitrogen gas from a nitrogen gas supply unit (not shown) is supplied into the alignment unit 130, the cooling unit 140, and the transfer chamber 170, respectively, and excess nitrogen gas is appropriately exhausted (not shown). Therefore, the alignment unit 130, the cooling unit 140, and the transfer chamber 170 are kept clean.

<1.2. Functional configuration of substrate processing apparatus>
FIG. 6 is a block diagram illustrating an example of a functional configuration of the substrate processing apparatus 100 (200, 300). Here, the functional configuration of the substrate processing apparatus 100 will be described mainly with reference to FIG.

  The transfer processing control unit 31 controls the operations of the delivery robot 120 and the transfer robot 150 to execute transfer processing of the processing substrate W and the comparison substrate W2 at a predetermined timing. The alignment process control unit 32 causes the alignment process to be performed at a predetermined timing on the process substrate W and the comparison substrate W2 carried into the alignment unit 130 from the indexer unit 110. Further, the heat treatment control unit 33 causes the heat treatment (flash heating) to be performed at a predetermined timing on the processing substrate W that has been transferred to the heat treatment unit 160 after the alignment process is completed. In addition, the cooling process control unit 34 causes the cooling process to be executed at a predetermined timing for the processing substrate W that has been subjected to the heating process and is carried into the cooling unit 140.

  The light reception processing control unit 35 controls the light emission operation of the light emitted from the light source 171a (see FIG. 4) of the incident / exit unit 171 to input the reflected light reflected by the reference substrate W1 or the comparison substrate W2. The emitting part 171 receives light. Further, when the reflected light reflected by the reference substrate W1 or the comparison substrate W2 is received while rotating the stationary table 133, the light reception processing control unit 35 rotates the stationary table 133 by the motor 135 and the light source 171a. The light emission operation of the light emitted from is synchronized. Details of the light receiving process realized by the light receiving process control unit 35 will be described later.

  The determination unit 36 reflects the reflected light (first reflected light) reflected by the reference substrate W1 and received by the input / output unit 171 and the reflected light (first reflected light) reflected by the comparison substrate W2 and received by the input / output unit 171 ( Based on the second reflected light), the support status of the processing substrate W and the comparative substrate W2 supported by the plurality of support pins 134 is determined.

  When it is determined that the support pin 134 is not correctly fixed to the stationary table 133, the determination unit 36 performs a notification process that notifies the user that the support pin 134 needs to be adjusted. Note that the notification to the user may be realized by, for example, emitting a warning sound, turning on a warning lamp, or displaying a warning screen on a display.

  Further, the determination unit 36 becomes a determination target by comparing the reflected light spectrum of the reflected light reflected by the non-defective processing substrate W with the reflected light spectrum reflected by the processing substrate W to be determined. The quality determination of the processing substrate W is executed. The details of the substrate support status determination process realized by the determination unit 36 will be described later.

<1.3. Reflected light reception processing>
Here, the light receiving process of the reflected light realized by the light receiving process control unit 35 will be described for each of the reference substrate W1 and the comparative substrate W2.

  First, the light receiving process of the reflected light (first reflected light) reflected by the reference substrate W1 will be described. In a state where the comparison substrate W2 is not carried into the alignment unit 130, the light reception processing control unit 35 causes the light source 171a to emit light. In addition, the light reception processing control unit 35 starts the rotation of the motor 135 substantially simultaneously with the light emission of the light source 171a, and rotates the reference substrate W1 placed on the stationary table 133.

  As a result, the surface of the reference substrate W1 is scanned by the reflection region RR1 substantially parallel to the longitudinal direction of the incident / exit portion 171. Therefore, the incident / exit section 171 can receive the reflected light reflected in a wide area on the reference substrate W1. The spectroscope 176 obtains one reflected light spectrum corresponding to the reflected light reflected by the reference substrate W1 through a series of rotation and light emission operations.

  Subsequently, when it is detected that the reference substrate W1 is rotated by a predetermined angle (for example, when the reference substrate W1 is substantially rotated halfway), the light receiving process control unit 35 turns off the light source 171a. Even after the light source 171a is turned off, the light reception processing control unit 35 continues to rotate the motor 135.

  When the rotation position of the reference substrate W1 returns to the position at the start of the light receiving process, the light receiving process control unit 35 stops the rotation of the motor 135 and the light receiving process is completed. The rotation position of the reference substrate W1 refers to, for example, an angle formed by the X axis and a straight line connecting the rotation center point of the reference substrate W1 and other points on the reference substrate W1.

  Next, the light receiving process of the reflected light (second reflected light) reflected by the comparative substrate W2 will be described. After the comparison substrate W2 is carried into the alignment unit 130 and supported by the plurality of support pins 134, when the alignment processing of the comparison substrate W2 is completed, the light reception processing control unit 35 causes the light source 171a to emit light. Further, the light reception processing control unit 35 starts the rotation of the motor 135 substantially simultaneously with the light emission of the light source 171a, and rotates the comparison substrate W2 supported on the stationary table 133.

  Thereby, the surface of the substrate for comparison W2 is scanned by the reflection region RR2 substantially parallel to the longitudinal direction of the incident / exit portion 171. Therefore, the entrance / exit part 171 can receive the reflected light reflected in the wide area | region on the board | substrate W2 for a comparison. The spectroscope 176 acquires one reflected light spectrum corresponding to the reflected light reflected by the comparison substrate W2 through a series of rotation and light emission operations.

  Subsequently, when it is detected that the comparison substrate W2 is rotated by a predetermined angle (for example, when the comparison substrate W2 is rotated approximately half), the light reception processing control unit 35 turns off the light source 171a. Even after the light source 171a is turned off, the light reception processing control unit 35 continues to rotate the motor 135.

  When the rotation position of the comparative substrate W2 returns to the position at the start of the light receiving process, the light receiving process control unit 35 stops the rotation of the motor 135 and the light receiving process is completed. Note that the rotational position of the comparative substrate W2 refers to, for example, an angle formed by the X axis and a straight line connecting the rotational center point of the comparative substrate W2 and other points on the comparative substrate W2.

  Here, as shown in FIGS. 2 and 3, the comparative substrate W2 is set so that its diameter D2 is equal to or larger than the diameter D1 of the reference substrate W1, and covers the upper side of the reference substrate W1. It is possible to arrange. Thereby, the reflected light received in a state where the comparison substrate W2 is supported by the support pins 134 does not include the reflected light reflected by the reference substrate W1. That is, most of the received reflected light is reflected light reflected by the comparative substrate W2. Therefore, it is possible to more accurately determine the support status of the processing substrate W and the comparative substrate W2 by the support pins 134.

  In the present embodiment, each of the reference substrate W1 and the comparison substrate W2 is constituted by a bare wafer (a silicon wafer on which no wiring pattern is formed on the substrate).

  As shown in FIGS. 2 and 3, the longitudinal size of the incident / exiting portion 171 (in other words, the longitudinal optical path width of the light emitted from the incident / exiting portion 171) L1 is the diameter of the reference substrate W1. It is set to be equal to or larger than D1 and the diameter D2 of the comparative substrate W2. Further, as shown in FIG. 4, the reflection areas RR1 and RR2 of the light reflected by the reference substrate W1 and the comparison substrate W2 are set so as to intersect with the rotation axis 135b of the stationary table 133.

  As a result, when light is continuously emitted from the incident / exit part 171 (irradiation part) while the stationary table 133 is rotated approximately half by the rotational driving force from the motor 135, the incident / exit part 171 (light receiving part) When the comparison substrate W2 is not supported by the support pins 134, the reflected light (first reflected light) reflected by the entire surface of the reference substrate W1 can be received. On the other hand, when the comparison substrate W2 is supported by the plurality of support pins 134, the input / output unit 171 (light receiving unit) reflects the reflected light (second reflected light) reflected on the entire surface of the comparison substrate W2. Can be received.

  Therefore, the determination unit 36 can execute the support state determination process using the reflected light reflected on the entire surface of the reference substrate W1 and the comparison substrate W2, and can determine the support state more accurately.

  Further, the comparison substrate W2 subjected to the light receiving process is transferred to the alignment unit 130 by the delivery robot 120, and the comparison substrate W2 after the light receiving process is completed is carried out to the transfer chamber 170 side by the transfer robot 150.

  That is, like the processing substrate W, the comparative substrate W2 is carried into the alignment unit 130 from the indexer unit 110 disposed on the upstream side of the alignment unit 130 when viewed from the transport direction AR1. Similarly to the processing substrate W, the comparative substrate W2 is carried out to the heating processing unit 160 and the cooling unit 140 side (processing unit side) arranged on the downstream side of the alignment unit 130 when viewed from the transport direction AR1. . Therefore, it is not necessary to construct a special transport procedure for determining the support status, and the number of steps required for constructing and managing the transport procedure can be reduced.

  Furthermore, the detection of the rotation amounts of the reference substrate W1 and the comparison substrate W2 may be executed by an encoder (not shown) attached to the motor 135, for example.

<1.4. Substrate support status judgment process>
In the present embodiment, the determination unit 36, for example, based on the reflected light spectrum of the reflected light reflected by the reference substrate W1 and the comparison substrate W2, the processing substrate W and the comparison substrate W2 by the plurality of support pins 134. The support situation of is judged. In the following, after determining the substrate support status determination principle based on the reflected light spectrum, the support status determination process realized by the determination unit 36 will be described.

  7 and 8 are graphs for explaining the principle of determination of the substrate support status in the present embodiment. 7 and 8, the vertical axis represents the spectral intensity of the reflected light at each wavelength, and the horizontal axis represents the wavelength of the reflected light. Also, the solid line SS1 in FIG. 7 and FIG. 8 shows the reflected light spectrum (hereinafter also simply referred to as “reference spectrum”) of the reflected light (first reflected light) reflected by the reference substrate W1 as broken lines CS1 and CS2. Each represents a reflected light spectrum (hereinafter also simply referred to as “comparison spectrum”) of the reflected light (second reflected light) reflected by the comparison substrate W2.

  Here, the alignment head 132 (see FIG. 3) used for the alignment process is attached with reference to the upper surface of the stationary table 133. When the upper surface of the stationary base 133 and the main surfaces of the processing substrate W and the comparison substrate W2 supported by the support pins 134 are substantially parallel, the alignment processing of the processing substrate W and the comparison substrate W2 is performed. Is executed correctly.

  That is, when each support pin 134 is correctly fixed to the stationary table 133, the main surface (upper surface or lower surface) of the comparison substrate W2 and the rotational axis 135b of the motor 135 intersect substantially perpendicularly. Further, the rotational positions of the processing substrate W and the comparative substrate W2 are satisfactorily positioned based on the detection result of the alignment head 132, and the alignment processing is executed correctly.

  Further, when the upper surface of the mounting table 133 and the comparison substrate W2 on each support pin 134 are substantially parallel, the main surface of the reference substrate W1 mounted on the upper surface of the mounting table 133 and each support pin The main surface of the comparative substrate W2 on 134 is substantially parallel. That is, the horizontal postures (first and second horizontal postures) of both the substrates W1 and W2 are substantially the same.

  When the horizontal postures of both the substrates W1 and W2 are substantially the same, the reference spectrum of the reflected light reflected by the reference substrate W1 and the comparison spectrum of the reflected light reflected by the comparison substrate W2 are measured. As a result, as shown in FIG. 7, it was found that both spectra SS1 and CS1 were in good agreement and became substantially similar curves.

  On the other hand, when the support pins 134 are not correctly fixed to the stationary table 133, the main surface of the comparison substrate W2 on each support pin 134 and the main surface of the reference substrate W1 on the stationary table 133 are substantially parallel to each other. In other words, the horizontal postures of the substrates W1 and W2 are different.

  Then, when the horizontal postures of the substrates W1 and W2 are different, the reference spectrum based on the reference substrate W1 and the comparison spectrum based on the comparison substrate W2 are measured. As shown in FIG. , It was found that the degree of coincidence of CS1 decreases.

  As described above, the following findings (1) and (2) were obtained as a result of intensive studies on the results of FIGS. 7 and 8.

  (1) For the same type of reference substrate W1 and comparison substrate W2 (both are configured by bare wafers), when the horizontal postures of the substrates W1 and W2 are substantially the same, the corresponding reference spectrum and comparison spectrum are substantially the same. Match ((solid line SS1 and broken line CS1 in FIG. 7).

  (2) When the support situation is different, the reflected light spectrum (see the broken line CS1 in FIG. 7 and the broken line CS2 in FIG. 8) is different even for the same comparative substrate W2.

  Therefore, in the present embodiment, based on these findings (1) and (2), by quantitatively evaluating the degree of coincidence between the reference spectrum of the reference substrate W1 and the comparison spectrum of the comparison substrate W2, The support status of the processing substrate W and the comparative substrate W2 by each support pin 134 is determined.

  The reference spectrum of the reference substrate W1 may be repeatedly acquired in advance. Preferably, each time the determination process is performed by the determination unit 36 (that is, the comparison spectrum of the comparison substrate W2 is acquired). Every time).

  Thereby, the light emission state of the light source changes (for example, the light intensity decreases) due to the secular change of the light source 171a (see FIG. 4), and the irradiation state of the light irradiated to the reference substrate W1 and the comparison substrate W2 side changes. Even so, each of the measured reference spectrum and comparative spectrum is affected by this change. Therefore, the determination result by the determination unit 36 does not depend on the light emission state of the light source as described above. In other words, the determination unit 36 can satisfactorily determine the support status of the processing substrate W and the comparison substrate W2 without being affected by the secular change of the light source 171a.

  Further, when the reference spectrum is acquired every time the determination process is executed, the reference spectrum of the reference substrate W1 may be acquired before the comparison substrate W2 is carried into the alignment unit 130, for example. Alternatively, the comparison spectrum of the comparison substrate W2 may be acquired and acquired after the comparison substrate W2 is carried out to the transfer chamber 170 side.

  Here, as a method for quantitatively evaluating the degree of coincidence between the reference spectrum of the reference substrate W1 and the comparison spectrum of the comparison substrate W2, for example, the determination unit 36 uses each wavelength for the reference spectrum and the comparison spectrum. Finds the sum of absolute differences in spectral intensities.

  When the sum is within the allowable range, the determination unit 36 determines that the support state of the processing substrate W and the comparative substrate W2 by the support pins 134 is good. On the other hand, when the total is out of the allowable range, the determination unit 36 determines that the mounting position of the support pin 134 is displaced and the adjustment of the support pin 134 is necessary (first determination). Technique).

  Specifically, the spectral intensity of the reference spectrum at the wavelength λ is SS (λ), the spectral intensity of the comparative spectrum at the wavelength λ is CS (λ), the allowable upper limit of the spectral intensity is UL1, and the allowable lower limit of the spectral intensity is In each case with LL1, the first determination method uses the number 1 to quantitatively determine the degree of coincidence.

  LL1 ≦ Σ | SS (λ) −CS (λ) | ≦ UL1 Expression 1

  Here, in Equation 1 (and Equations 2 and 3 described later), the degree of coincidence is determined using all measured wavelength ranges (400 nm to 1000 nm in the case of FIGS. 7 and 8) for the reference spectrum and the comparative spectrum. Judging.

  Further, the determination unit 36 obtains a reference sum as a sum of spectrum intensities at each wavelength for the reference spectrum, and obtains a comparison sum as a sum of spectrum intensities at each wavelength for the comparison spectrum. Then, the determination unit 36 may determine that the support state of the processing substrate W and the comparison substrate W2 is good when the ratio between the reference sum and the comparison sum is within an allowable range (second determination method). .

  Specifically, when the allowable upper limit ratio is set to UL2 and the allowable lower limit ratio is set to LL2, in the second determination method, Formula 2 is used to quantitatively determine the degree of coincidence.

  LL1 ≦ (ΣSS (λ)) / (ΣCS (λ)) ≦ UL1 Expression 2

  Further, the determination unit 36 may determine that the support state of the processing substrate W and the comparison substrate W2 is good when the ratio of the spectral intensity of the reference spectrum and the comparison spectrum in each wavelength is within the allowable range. (Third determination method).

  Specifically, when the ratio of the spectrum intensity of the reference spectrum and the comparison spectrum is RS (λ), the allowable upper limit ratio is UL3, and the allowable lower limit ratio is LL3, the third determination method quantifies the degree of coincidence. Equation 3 is used to make a judgment.

  LL3 ≦ RS (λ) = SS (λ) / CS (λ) ≦ UL3 Equation 3

<1.5. Advantages of the substrate processing apparatus of the first embodiment>
As described above, the substrate processing apparatus 100 according to the present embodiment has the reflected light spectrum (reference spectrum) of the reference substrate W1 placed on the stationary table 133 and the comparison substrate W2 supported on the stationary table 133. From the degree of coincidence with the reflected light spectrum (comparison spectrum), it is possible to determine the support status of the processing substrate W and the comparison substrate W2 by the support pins 134.

  Thereby, the user can grasp the necessity of adjustment of each support pin 134 based on this determination result, and can adjust each support pin 134 as needed. Therefore, the light reception state of the reflected light received by the incident / exiting unit 171 can be maintained well, and the quality determination of the processing substrate W based on the reflected light spectrum can be performed well.

  Further, since the necessity of adjusting each support pin 134 can be grasped and each support pin 134 can be adjusted as necessary, the rotational positions of the processing substrate W and the comparison substrate W2 executed by the alignment unit 130 It is possible to maintain good positioning accuracy.

  Further, the substrate processing apparatus 100 of the present embodiment can receive reflected light while rotating the reference substrate W1 and the comparison substrate W2. Thereby, the reflected light is reflected in a wide area on the reference substrate W1 or the comparison substrate W2. Therefore, it is possible to satisfactorily determine the support status of the processing substrate W and the comparative substrate W2 by the plurality of support pins 134.

  Further, in the present embodiment, the reference substrate W1 and the comparison substrate W2 are constituted by bare wafers. Thereby, it is possible to better grasp the degree of coincidence between the reference spectrum of the reference substrate W1 and the comparison spectrum of the comparison substrate W2. Therefore, it is possible to more accurately determine the support status of the processing substrate W and the comparative substrate W2 by the plurality of support pins 134.

<2. Second Embodiment>
Next, a second embodiment of the present invention will be described. The substrate processing apparatus 200 according to the second embodiment is different from the substrate processing apparatus 100 according to the first embodiment except that the irradiation unit and the light receiving unit are provided separately. This is the same as the embodiment. Therefore, in the following, this difference will be mainly described.

  In the following description, the same reference numerals are given to the same components as those in the substrate processing apparatus 100 according to the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

  FIG. 9 is a plan view showing an example of the configuration of the alignment unit 230 according to the second embodiment. As shown in FIG. 9, the alignment unit 230 mainly includes an alignment head 132, a stationary base 133, a plurality of support pins 134, an irradiation unit 271, a light receiving unit 272, and a spectrometer 176. Yes. In FIG. 9, the alignment chamber 131 is not shown for convenience of illustration.

  The irradiation unit 271 irradiates the stationary base 133 side with light supplied from the light source, similarly to the input / output unit 171. As shown in FIG. 9, the irradiation unit 271 is separated from the alignment head 132 and is provided at a position where it does not interfere with the alignment head 132. Further, as shown in FIG. 9, both ends of the irradiation unit 271 viewed from the longitudinal direction (substantially Y-axis direction in FIG. 9) are attached near the upper portions of the support members 273a and 273b, respectively. It is arranged above the stationary table 133.

  Further, as shown in FIG. 9, the size in the longitudinal direction of the irradiation unit 271 (in other words, the longitudinal optical path width of the light emitted from the irradiation unit 271) L2 is the diameter D1 of the reference substrate W1 and the comparison substrate. It is set to be equal to or larger than the diameter D2 of the substrate W2. Further, the reflection areas of the light reflected by the reference substrate W1 and the comparison substrate W2 are set so as to intersect with the rotation axis 135b of the stationary table 133, respectively.

  The light receiving unit 272 receives the reflected light that is irradiated from the irradiation unit 271 and reflected by the reference substrate W1 or the comparison substrate W2. The received reflected light is introduced into the spectroscope 176 via an optical fiber. As shown in FIG. 9, the light receiving portion 272 is separated from the alignment head 132 and is provided at a position where it does not interfere with the alignment head 132.

Further, as shown in FIG. 9, both ends of the light receiving portion 272 viewed from the longitudinal direction (substantially Y-axis direction in FIG. 9) are attached near the upper portions of the support members 274a and 274b, respectively. It is arranged above the stationary table 133.

  As described above, the substrate processing apparatus 200 according to the second embodiment (more specifically, the light receiving unit 272 of the alignment unit 230) has the above-described configuration, so that the reference substrate on the stationary table 133 is obtained. The reflected light reflected by W1 and the reflected light reflected by the comparative substrate W2 on the stationary table 133 can be received.

  Thereby, the substrate processing apparatus 200 of this Embodiment is the same as the substrate processing apparatus 100 of 1st Embodiment, and the process substrate W and comparison by the support pin 134 from the coincidence degree of a reference | standard spectrum and a comparison spectrum. It is possible to determine the support status of the substrate W2. Moreover, the user can grasp | ascertain the necessity for adjustment of each support pin 134 based on this determination result, and can adjust each support pin 134 as needed.

  Therefore, similarly to the first embodiment, the light receiving state of the reflected light received by the light receiving unit 272 can be maintained well, and the quality determination of the processing substrate W based on the reflected light spectrum is executed well. be able to. Further, similarly to the first embodiment, the positioning accuracy of the rotational positions of the processing substrate W and the comparative substrate W2 executed by the alignment unit 230 can be maintained well.

<3. Third Embodiment>
Next, a third embodiment of the present invention will be described. The substrate processing apparatus 300 according to the third embodiment is the same as the first embodiment except that the configuration of the incident / exit section is different from that of the substrate processing apparatus 100 according to the first embodiment. It is. Therefore, in the following, this difference will be mainly described.

  In the following description, the same reference numerals are given to the same components as those in the substrate processing apparatus 100 according to the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

  FIG. 10 is a cross-sectional view of the alignment unit 330 according to the third embodiment viewed from the line V1-V1 in FIG. As shown in FIG. 10, the alignment unit 330 mainly includes an alignment head 132, a stationary base 133, a plurality of support pins 134, an incident / exit unit 371, and a spectrometer 176. In FIG. 10, the alignment chamber 131 is not shown for convenience of illustration.

  Similarly to the input / output unit 171, the input / output unit 371 functions as an irradiation unit on the stationary table 133 side for the light supplied from the light source 171 a, and the reference substrate W <b> 1 and the comparative substrate disposed on the stationary table 133 side. Each has a function as a light receiving unit that receives reflected light reflected by W2.

  Similarly to the input / output unit 171 of the first embodiment, the input / output unit 371 is separated from the alignment head (not shown), and is provided at a position where it does not interfere with the alignment head. Further, as shown in FIG. 10, both ends of the incident / exit portion 371 viewed from the longitudinal direction (substantially Y-axis direction in FIG. 10) are attached near the upper portions of the support members 173a and 173b, respectively. Thereby, the incident / exit section 371 is disposed above the stationary table 133.

  As shown in FIG. 4, the incident / exit section 371 mainly includes a cylindrical lens 371 b and a half mirror 171 c, similarly to the incident / exit section 171. Each of the cylindrical lens 371b and the half mirror 171c extends along the longitudinal direction of the incident / exit section 171.

  Here, as shown in FIG. 10, the size in the longitudinal direction of the cylindrical lens 371b in the incident / exit portion 371 (in other words, the longitudinal optical path width of the light emitted from the incident / exit portion 371) L3 is the reference substrate W1. Is set to be equal to or larger than the radius R1 of the comparative substrate W2. Further, as shown in FIG. 4, the reflection areas RR3 and RR4 of the light reflected by the reference substrate W1 and the comparison substrate W2 are set so as to intersect with the rotation axis 135b of the stationary table 133.

  As a result, when light is continuously emitted from the incident / exit part 371 (irradiation part) while the stationary table 133 is rotated approximately once by the rotational driving force from the motor 135, the incident / exit part 371 (light receiving part) becomes (1 When the comparison substrate W2 is not supported by the plurality of support pins 134, the reflected light (first reflected light) reflected by the entire surface of the reference substrate W1 can be received.

  On the other hand, (2) when the comparison substrate W2 is supported by the plurality of support pins 134, the input / output unit 371 (light receiving unit) reflects the reflected light (second light) reflected on the entire surface of the comparison substrate W2. (Reflected light) can be received.

  Therefore, the determination unit 36 can execute the support state determination process using the reflected light reflected on the entire surface of the reference substrate W1 and the comparison substrate W2, and can determine the support state more accurately.

  Thus, the substrate processing apparatus 300 of the third embodiment (more specifically, the incident / exit section 371 of the alignment section 330) has the above-described configuration, so that it is for reference on the stationary table 133. The reflected light reflected by the substrate W1 and the reflected light reflected by the comparison substrate W2 on the stationary table 133 can be received.

  Thereby, the substrate processing apparatus 300 of this Embodiment is the same as the substrate processing apparatus 100 of 1st Embodiment, and the process board | substrate W and comparison by the support pin 134 from the coincidence degree of a reference | standard spectrum and a comparison spectrum. It is possible to determine the support status of the substrate W2. Moreover, the user can grasp | ascertain the necessity for adjustment of each support pin 134 based on this determination result, and can adjust each support pin 134 as needed.

  Therefore, similarly to the first embodiment, the light reception state of the reflected light received by the incident / exit section 371 can be maintained well, and the quality determination of the processing substrate W based on the reflected light spectrum is executed well. can do. In addition, similarly to the first embodiment, the positioning accuracy of the rotational positions of the processing substrate W and the comparative substrate W2 executed by the alignment unit 330 can be favorably maintained.

<4. Modification>
Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made.

  (1) In the first to third embodiments, the support pin 134 is described as being screwed to the stationary base 133, but the mode of the support pin 134 is not limited to this. For example, each support pin 134 may be configured to be movable up and down with respect to the upper surface of the stationary table 133 by an elevator mechanism (not shown). Also in this case, the user adjusts the support status of the processing substrate W and the comparative substrate W2 by adjusting the mounting status of each support pin 134 to the lifting mechanism (for example, the protruding amount in the height direction with respect to the lifting mechanism). can do.

  (2) In the first to third embodiments, the light reception processing control unit 35 performs the rotation operation of the stationary table 133 and the light emission operation by the light source 171a after the alignment processing of the comparison substrate W2 is completed. However, the present invention is not limited to this.

  For example, the light reception process control unit 35 synchronizes the rotation operation and the light emission operation with respect to the comparison substrate W2 on which the alignment process has not been performed, and causes the incident / exit unit 171 (or the light receiving unit 272 and the incident / exit unit 371) to perform synchronization. The reflected light may be received. In this case, it is not necessary to continue the rotation of the comparison substrate W2 to the position at the start of light reception after the light reception is completed.

  (3) In the first to third embodiments, the determination unit 36 has been described as executing determination processing using all measured wavelength ranges for the reference spectrum and the comparison spectrum. However, the wavelength range to be determined is not limited to this. For example, for each of the reference spectrum and the comparison spectrum, the support status of the processing substrate W and the comparison substrate W2 may be determined based on a spectrum in a partial wavelength range (for example, 500 nm to 700 nm). Thereby, the calculation cost required for the determination process can be reduced.

It is a top view which shows an example of the whole structure of the substrate processing apparatus in the 1st thru | or 3rd embodiment of this invention. It is sectional drawing which looked at the alignment part of 1st Embodiment from the V1-V1 line | wire of FIG. It is a top view which shows an example of a structure of the alignment part in 1st and 3rd embodiment. It is a sectional side view which shows typically the structure of the incident / exit part of 1st and 3rd embodiment. It is a front view which shows an example of the heat processing part in 1st thru | or 3rd Embodiment. It is a block diagram which shows an example of a function structure in the substrate processing apparatus of 1st thru | or 3rd Embodiment. It is a graph for demonstrating the determination principle of the substrate support condition in the 1st thru | or 3rd embodiment. It is a graph for demonstrating the determination principle of the substrate support condition in the 1st thru | or 3rd embodiment. It is a top view which shows an example of a structure of the alignment part in 2nd Embodiment. It is sectional drawing which looked at the alignment part of 3rd Embodiment from the V1-V1 line | wire of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 3 Control part 36 Judgment part 100,200,300 Substrate processing apparatus 110 Indexer part 120 Delivery robot 130,230,330 Alignment part 133 Stationary stand 134 Support pin 134a Surrounding area 135 Motor (rotation drive part)
135a Rotating shaft 135b Rotating axis 171 and 371 Light incident and exiting portion 171a Light source 171b Cylindrical lens 171d and 175 Optical fiber 176 Spectrometer 271 Irradiating portion 272 Light receiving portion CS1 and CS2 Comparison spectrum RR1 and RR2 Reflection region SS1 Reference spectrum W Processing substrate W1 Substrate (first substrate)
W2 Comparison substrate (second substrate)

Claims (15)

A substrate processing apparatus,
(a) a processing unit that performs processing on a processing substrate to be processed;
(b) an alignment unit that is provided on the upstream side of the processing unit when viewed from the transport direction of the processing substrate, and that adjusts the rotational position of the processing substrate based on a reference position provided on the processing substrate;
(c) a determination unit;
With
The alignment unit is
(b-1) a stationary table for placing the first reference substrate in a first horizontal position;
(b-2) a support portion provided on the stationary table and supporting the second substrate for comparison in a second horizontal posture;
(b-3) an irradiation unit that irradiates the stationary table with light supplied from a light source;
(b-4) a light receiving unit that receives reflected light reflected on the stationary table side;
Have
The first substrate is placed on an upper surface of the stationary table;
The second substrate is supported by the support portion in a state of being separated from the upper surface of the stationary table,
The determination unit is based on first reflected light reflected by the first substrate and received by the light receiving unit, and second reflected light reflected by the second substrate and received by the light receiving unit. Determining the support status of the second substrate supported by the support part ;
The support status is determined using the parallelism of the main surface of the second substrate with respect to the main surface of the first substrate placed on the upper surface of the stationary table as an index.
A substrate processing apparatus. The substrate processing apparatus according to claim 1,
The alignment unit is
A rotational drive unit that is linked to the stationary table and rotates the stationary table;
Further comprising
The substrate processing apparatus, wherein the first and second reflected lights are received while the first and second substrates are rotated, respectively. The substrate processing apparatus according to claim 2,
The size of the irradiation part in the longitudinal direction is not less than the diameter of the first and second substrates,
The reflection area of the light reflected on the first and second substrates intersects with the rotation axis of the stationary table,
The substrate processing apparatus, wherein the light receiving unit receives the first and second reflected lights reflected by the entire surface of the first and second substrates, with the stationary table being rotated approximately halfway. The substrate processing apparatus according to claim 2,
A size in a longitudinal direction of the irradiation unit is equal to or greater than a radius of the first and second substrates;
The reflection area of the light reflected on the first and second substrates intersects with the rotation axis of the stationary table,
The substrate processing apparatus, wherein the light receiving unit receives the first and second reflected lights reflected by the entire surface of the first and second substrates by rotating the stationary table substantially once. The substrate processing apparatus according to claim 1, wherein:
The diameter of the said 2nd board | substrate is more than the diameter of the said 1st board | substrate, The substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 1, wherein:
Each of the first and second substrates is a bare wafer. The substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the support part is a plurality of support pins erected from the stationary table. The substrate processing apparatus according to claim 7,
The substrate processing apparatus, wherein the first substrate is placed in an enclosed area surrounded by the plurality of support pins. The substrate processing apparatus according to any one of claims 1 to 8,
Similar to the processing substrate, the second substrate is carried into the alignment unit from the upstream side of the alignment unit as viewed from the transport direction, and is carried out to the processing unit side. The substrate processing apparatus according to any one of claims 1 to 9,
The determination unit determines a support state of the second substrate based on reflected light spectra of the first and second reflected lights reflected by the first and second substrates. . The substrate processing apparatus according to claim 10, wherein
(i) The reflected light spectrum of the first reflected light reflected by the first substrate is a reference spectrum,
(ii) When the reflected light spectrum of the second reflected light reflected by the second substrate supported by the support portion is a comparative spectrum,
The determination unit
Based on the reference spectrum and the comparison spectrum, determine the support status of the second substrate supported by the support unit,
The substrate processing apparatus, wherein the reference spectrum is measured every time a determination process is performed by the determination unit. The substrate processing apparatus according to claim 11,
The determination unit
For the reference spectrum and the comparative spectrum, obtain the sum of absolute differences in spectral intensity at each wavelength,
The substrate processing apparatus according to claim 1, wherein when the sum is within an allowable range, it is determined that the second substrate is supported well. The substrate processing apparatus according to claim 11,
The determination unit
For the reference spectrum, obtain a reference sum as a sum of spectrum intensities at each wavelength, and for the comparison spectrum, obtain a comparison sum as a sum of spectrum intensities at each wavelength,
The substrate processing apparatus, wherein when the ratio between the reference sum and the comparison sum falls within an allowable range, the support state of the second substrate is determined to be good. The substrate processing apparatus according to claim 11,
The substrate processing is characterized in that the determination unit determines that the support state of the second substrate is good when a ratio of spectral intensities of the reference spectrum and the comparison spectrum in each wavelength is within an allowable range. apparatus. In the substrate processing apparatus in any one of Claims 10 thru | or 14,
The determination unit determines a support state of the second substrate based on a spectrum in a part of a wavelength range in the reflected light spectrum.

Images