JP5246390B2 - Thin film device manufacturing method, thin film device forming substrate, and liquid jet head manufacturing method - Google Patents

Description

  The present invention relates to a method for manufacturing a thin film device having a thin film element on a device substrate, and a thin film device forming substrate having a plurality of thin film devices integrally. The present invention relates to a method of manufacturing a liquid ejecting head that ejects water.

  A piezoelectric element used for a liquid jet head or the like is an element in which a piezoelectric layer made of a ferroelectric material such as a piezoelectric material exhibiting an electromechanical conversion function is sandwiched between two electrodes, and the piezoelectric layer is crystallized, for example. It is composed of piezoelectric ceramics. As a liquid ejecting head using such a piezoelectric element, for example, a part of a pressure generating chamber communicating with a nozzle for ejecting ink droplets is constituted by a diaphragm, and the diaphragm is deformed by the piezoelectric element to generate pressure. There is an ink jet recording head that pressurizes ink in a chamber and ejects ink droplets from nozzles.

  Here, a plurality of flow path forming substrates constituting the ink jet recording head are integrally formed on a flow path forming substrate wafer made of, for example, a silicon wafer. And after forming the piezoelectric element which is a thin film element, a pressure generation chamber, etc. in the state of the wafer for channel formation substrates, it is divided into each channel formation substrate. The element forming film constituting the piezoelectric element is formed over the entire surface of the flow path forming substrate wafer and then patterned into a predetermined shape by etching using a resist film or the like as a mask (for example, Patent Document 1).

Japanese Patent Laid-Open No. 2004-054087

  When the piezoelectric element is formed by such a method, the dimensional accuracy of the piezoelectric element may be lowered. Specifically, the flow path forming substrate wafer and the element forming film constituting the piezoelectric element have different linear expansion coefficients. Therefore, if the element forming film is formed on the flow path forming substrate wafer, the flow path forming substrate The wafer will be warped. The piezoelectric element is formed, for example, by patterning an element forming film using a resist film as a mask. For this reason, the position accuracy of the resist film is lowered when the flow path forming substrate wafer is warped. Therefore, if the element formation film is patterned using such a resist film as a mask, the dimensional accuracy of the piezoelectric element may be reduced.

  Such a problem exists not only in a manufacturing method of a liquid ejecting head such as an ink jet recording head that discharges ink droplets but also in a manufacturing method of a device substrate having all thin film elements.

  In view of such circumstances, the present invention provides a thin film device manufacturing method and thin film device forming substrate with improved thin film element formation accuracy, and a liquid jet head manufacturing method with improved dimensional accuracy of a piezoelectric element which is a thin film element. The purpose is to do.

The present invention for solving the above problems is a method of manufacturing a thin film device in which a thin film element is provided on a device substrate, wherein the thin film element is formed on a device wafer on which a plurality of the device substrates are integrally formed. Forming a thin film element by patterning the element forming film and patterning the element forming film; and dividing the device wafer into a plurality of device substrates along a break pattern ; and In the step of forming the thin film element, before patterning the element formation film, a device non-formation part that is surrounded by the break pattern and is not formed with the device substrate is provided at the center of the device wafer. on the device-forming portion, a thin film which comprises a step of forming a thin film portion which is not partially formed of said element forming layer In the method of manufacturing the device.

In the present invention, since the warpage of the device wafer is reduced when the thin film element is formed by patterning, the thin film element can be formed with high accuracy and the dimensional accuracy can be improved. Moreover, generation | occurrence | production of inferior goods can be prevented and the number of thin film devices increases.

  Further, it is preferable that the thin film portion is formed between the device substrates of the device wafer. Thereby, the curvature of the device wafer can be more reliably reduced.

Furthermore, the present invention provides a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening for ejecting a liquid is formed, and a piezoelectric element that is provided on one side of the flow path forming substrate and applies pressure to the pressure generating chamber. An element forming film constituting the piezoelectric element is formed on a flow path forming substrate wafer in which a plurality of the flow path forming substrates are integrally formed. Forming the piezoelectric element by patterning a forming film; forming the pressure generating chamber in the flow path forming substrate wafer; and forming a plurality of the flow path forming substrate wafers along a break pattern. and a step of dividing the flow path forming substrate, and the step of forming the piezoelectric element, before patterning the device forming layer, a central portion of the flow path forming wafer substrate, the break putter A flow path forming substrate non-forming portion that is surrounded by and in which the flow path forming substrate is not formed is provided, and a thin film portion in which a part of the element forming film is not formed is formed on the flow path forming substrate non-forming portion. A method of manufacturing a liquid ejecting head including a process .

In the present invention, when the piezoelectric element is formed by patterning, warpage of the flow path forming substrate wafer is reduced, so that the piezoelectric element can be formed with high accuracy and the dimensional accuracy can be improved. Thereby, generation | occurrence | production of inferior goods can be prevented and a yield improves.

  In addition, it is preferable that the thin film portion is formed between the flow path forming substrates of the flow path forming substrate wafer. Thereby, the curvature of the wafer for flow path formation substrates can be reduced more reliably.

Furthermore, the present invention provides a thin film device forming substrate integrally including a plurality of thin film devices having thin film elements formed on a device substrate, wherein the device substrate is formed integrally with a break pattern interposed therebetween. A device non-formation portion that is surrounded by the break pattern and is not formed with the device substrate, and the device non-formation portion is formed with a part of an element formation film constituting the thin film element. The thin film device forming substrate is characterized in that the thin film portion is not formed.

  In the present invention, the characteristics of the thin film element can be improved and the yield can be improved.

Hereinafter, the present invention will be described in detail based on an embodiment.
FIG. 1 is an exploded perspective view illustrating an outline of an ink jet recording head which is an example of a liquid ejecting head, and FIG. 2 is a plan view and a cross-sectional view taken along line AA ′ of FIG. As shown in the figure, a flow path forming substrate (device substrate) 10 constituting an ink jet recording head is made of, for example, a silicon single crystal substrate having a plane orientation (110), and an elastic film made of silicon dioxide on one surface thereof. 50 is formed. In the flow path forming substrate 10, a plurality of pressure generating chambers 12 partitioned by a partition wall 11 are arranged in parallel in the width direction. An ink supply path 13 and a communication path 14 that are partitioned by a partition wall 11 and communicate with each pressure generation chamber 12 are provided on one end side in the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10. A communication portion 15 that communicates with each communication path 14 is provided outside the communication path 14. The communication portion 15 communicates with a reservoir portion 32 of the protective substrate 30 described later, and constitutes a part of the reservoir 100 common to the pressure generation chambers 12.

  The ink supply path 13 is formed so as to have a narrower cross-sectional area than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 15. Specifically, the ink supply path 13 has a width smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the reservoir 100 and each pressure generation chamber 12 in the width direction. Is formed. Each communication path 14 is formed by extending the partition walls 11 on both sides in the width direction of the pressure generating chamber 12 to the communication part 15 side to partition the space between the ink supply path 13 and the communication part 15. The ink supply path 13 is not limited to the above-described configuration, and for example, the width of the flow path may be narrowed from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path. As described above, the silicon single crystal substrate is preferably used as the material of the flow path forming substrate 10 as described above. However, the material is not limited to this, and for example, glass ceramics, stainless steel, or the like may be used.

  On the opening surface side of the flow path forming substrate 10, a nozzle plate 20 in which a nozzle 21 communicating with the vicinity of the end portion of each pressure generating chamber 12 on the side opposite to the ink supply path 13 is formed is an adhesive or a heat welding film. And so on. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, or stainless steel (SUS).

  On the other hand, the elastic film 50 is formed on the side opposite to the opening surface of the flow path forming substrate 10 as described above, and the insulator film 55 is formed on the elastic film 50. Furthermore, a piezoelectric element (thin film element) 300 including a lower electrode film 60, a piezoelectric layer 70 having a thickness of about 1.0 to 5.0 μm, and an upper electrode film 80 is formed on the insulator film 55. Is formed. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one of the electrodes of the piezoelectric element 300 is used as a common electrode, and the other electrode is patterned together with the piezoelectric layer 70 for each pressure generating chamber 12 to form individual electrodes. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 substantially function as a vibration plate, but only the lower electrode film 60 is provided without providing the elastic film 50 and the insulator film 55. The lower electrode film 60 may be left as a diaphragm. Further, the piezoelectric element 300 itself may substantially serve as a diaphragm.

  A protective substrate 30 having a piezoelectric element holding portion 31 for protecting the piezoelectric element 300 is bonded onto the flow path forming substrate 10. The piezoelectric element holding portion 31 may be sealed, but may not be sealed. Further, the protective substrate 30 is provided with a reservoir portion 32 that constitutes at least a part of the reservoir 100 serving as an ink chamber common to the pressure generating chambers 12. On the protective substrate 30, a compliance substrate 40 including a sealing film 41 made of a material having low rigidity and flexibility and a fixing plate 42 made of a hard material such as metal is joined. A region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, and one surface of the reservoir 100 is sealed only by the sealing film 41.

  In such an ink jet recording head, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle 21, and then passed through external wiring in accordance with a recording signal from a drive circuit (not shown). By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 and bending the piezoelectric element 300 and the diaphragm, the pressure in each pressure generation chamber 12 is changed. The ink droplets are ejected from the rising nozzle 21.

  Hereinafter, a method for manufacturing an ink jet recording head according to the present embodiment, particularly a method for forming a piezoelectric element will be described.

  As shown in FIG. 3, a plurality of the above-described flow path forming substrates 10 are integrally formed on a flow path forming substrate wafer (device wafer) 110 made of a silicon wafer, and then the flow path forming substrate wafer 110 is formed. It is formed by dividing. At this time, in this embodiment, the flow path forming substrate non-forming part (device non-forming part) 111 in which the flow path forming substrate 10 is not formed is formed in the central part of the flow path forming substrate wafer 110.

  Here, in general, the plurality of flow path forming substrates 10 are continuously arranged in parallel on the flow path forming substrate wafer 110 with a break pattern for dividing them individually. That is, the respective flow path forming substrates 10 are densely formed on the central portion side of the flow path forming substrate wafer 110. On the other hand, in the present invention, the flow path forming substrate 10 is not formed in the central portion by slightly shifting the arrangement of the flow path forming substrate 10 toward the outer peripheral portion side of the flow path forming substrate wafer 110 as shown by the arrows in the figure. Part (hereinafter referred to as “non-formation part”) 111 is formed.

  Even when the flow path forming substrate 10 is arranged in this manner, it is necessary to form a space having a predetermined width (outside the dotted line in FIG. 3) on the outer peripheral portion of the flow path forming substrate wafer 110. This space is necessary to ensure the rigidity of the flow path forming substrate wafer 110 and prevent the wafer from cracking.

First, as shown in FIG. 4A, a silicon dioxide film 51 to be an elastic film 50 is formed on the flow path forming substrate wafer 110. Next, as shown in FIG. 4B, an insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed on the elastic film 50 (silicon dioxide film 51). Next, as shown in FIG. 4C, the lower electrode film 60 is formed on the entire surface of the insulator film 55 and patterned into a predetermined shape. The material of the lower electrode film 60 is not particularly limited. However, when lead zirconate titanate (PZT) is used as the piezoelectric layer 70, it is desirable that the material has little change in conductivity due to diffusion of lead oxide. . For this reason, platinum, iridium or the like is preferably used as the material of the lower electrode film 60.

  Next, as illustrated in FIG. 4D, for example, a piezoelectric layer 70 and an upper electrode film 80 are sequentially formed on the lower electrode film 60. For example, in the present embodiment, the piezoelectric layer 70 is formed by a so-called MOD (Metal-Organic Decomposition) method. That is, after a colloidal solution obtained by dissolving an organometallic compound such as a metal alkoxide in alcohol and adding a hydrolysis inhibitor or the like to this is applied by, for example, a spin coating method to form a piezoelectric precursor film The piezoelectric precursor layer 70 is obtained by drying and degreasing this piezoelectric precursor film to release organic components, followed by firing and crystallization.

In addition, as a material of the piezoelectric layer 70, for example, a piezoelectric material such as lead zirconate titanate (PZT) is used. In addition, a piezoelectric material containing excess lead (lead exceeding the stoichiometric ratio) is used in order to prevent lead chipping in the piezoelectric layer 70 formed by firing. Of course, the material of the piezoelectric layer 70 is not limited to lead zirconate titanate (PZT). For example, a relaxor ferroelectric material in which a metal such as niobium, nickel, magnesium, bismuth or yttrium is added to lead zirconate titanate (PZT) may be used. The composition may be appropriately selected in consideration of the characteristics, use, etc. of the piezoelectric element 300. For example, PbTiO ₃ (PT), PbZrO ₃ (PZ), Pb (Zr _x Ti _1-x ) O ₃ (PZT) ), Pb (Mg _1/3 Nb _2/3 ) O ₃ —PbTiO ₃ (PMN-PT), Pb (Zn _1/3 Nb _2/3 ) O ₃ —PbTiO ₃ (PZN—PT), Pb (Ni ₁ ) _{/ 3} Nb _2/3 ) O ₃ -PbTiO ₃ (PNN-PT), Pb (In _1/2 Nb _1/2 ) O ₃ -PbTiO ₃ (PIN-PT), Pb (Sc _1/2 Ta _{1/2 ) O 3 -PbTiO 3 (PST-} PT), Pb (Sc 1/2 Nb 1/2) O 3 -PbTiO 3 (PSN-PT), BiScO 3 -PbTiO 3 (BS-PT), BiYbO 3 -PbTiO 3 (BY-PT) and the like. In this embodiment, the piezoelectric layer 70 is formed by the MOD method. However, the present invention is not limited to this, and the piezoelectric layer 70 may be formed by a so-called sol-gel method.

  Here, in the state where the element forming films (the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80) constituting the piezoelectric element 300 are formed on the flow path forming substrate wafer 110, the element forming film and the flow are formed. Due to the difference in linear expansion coefficient from the path forming substrate wafer 110, the flow path forming substrate wafer 110 is warped. For example, in the case of the flow path forming substrate wafer 110 according to the present embodiment, as shown in FIG. 5A, a warpage occurs in which the opposite side of the lower electrode film 60 is convex at room temperature. In this state, when the piezoelectric layer 70 and the upper electrode film 80 are patterned, the formation accuracy of the resist film serving as a mask is lowered, and the dimensional accuracy of the piezoelectric element 300 may be lowered accordingly.

  Therefore, in the present invention, before patterning these element formation films to form the piezoelectric element 300, a part of the element formation film, that is, a predetermined position between the flow path formation substrates 10 of the flow path formation substrate wafer 110, that is, The thin film portion 112 in which any of a plurality of films constituting the element formation film is not formed is provided. In the present embodiment, after the upper electrode film 80 is formed on the piezoelectric layer 70, the piezoelectric layer 70 and the upper electrode film 80 are patterned to obtain a flow path forming substrate as shown in FIG. 5B. The piezoelectric layer 70 and the upper electrode film 80 in the non-formed part 111 at the center of the wafer 110 were removed to form a thin film part 112 in which only the lower electrode film 60 was present. That is, in the configuration of the present embodiment, the non-formed part 111 is the thin film part 112.

  The stress applied to the flow path forming substrate wafer 110 due to the above-described difference in linear expansion coefficient is greatest at the center of the flow path forming substrate wafer 110. Therefore, the stress applied to the flow path forming substrate wafer 110 is greatly relieved by forming the thin film portion 112 at the center of the flow path forming substrate wafer 110 as in the present embodiment. That is, the warpage amount of the flow path forming substrate wafer 110 is greatly reduced.

  The piezoelectric element 300 is formed in a region facing each pressure generating chamber 12 by patterning the piezoelectric layer 70 and the upper electrode film 80 in a state where the warpage of the flow path forming substrate wafer 110 is reduced as described above. . Specifically, first, as shown in FIG. 6A, a resist film 150 is formed by applying a resist on the upper electrode film 80. Next, as shown in FIG. 6B, the resist film 150 is exposed through a predetermined mask 200 and then developed to form a resist film 150 having a predetermined pattern. Here, the resist film 150 is formed, for example, by applying a negative resist by a spin coating method or the like and then performing exposure, development, and baking using a predetermined mask. Of course, a positive resist may be used instead of the negative resist. Then, as shown in FIG. 6C, the piezoelectric element 300 is formed by ion milling the upper electrode film 80 and the piezoelectric layer 70 using the resist film 150 as a mask. As a result, a thin film device forming substrate integrally formed with a plurality of thin film devices having piezoelectric elements as thin film elements is formed on a flow path forming substrate as a device substrate.

  As described above, in this embodiment, before the piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 which are element forming films, the thin film portion 112 is formed at the center of the flow path forming substrate wafer 110. It was made to form. Thereby, as described above, the warp of the flow path forming substrate wafer 110 when patterning the piezoelectric element 300 is substantially eliminated (FIG. 5B). Therefore, the resist film 150 for patterning the piezoelectric element 300 can be formed with high accuracy. That is, since the resist film 150 can be exposed with the exposure mask 200 positioned with high accuracy, the formation accuracy of the resist film 150 is greatly improved (FIG. 6B). Therefore, by patterning the upper electrode film 80 and the piezoelectric layer 70 using the resist film 150 as a mask to form the piezoelectric element 300, the piezoelectric element 300 can be formed with extremely high accuracy (FIG. 6 ( c)).

  Further, in the present embodiment, the non-forming portion 111 is provided in the central portion of the flow path forming substrate wafer 110 so that the number of flow path forming substrates 10 taken from one flow path forming substrate wafer 110 is increased. Is substantially improved. In the central portion of the flow path forming substrate wafer 110, the piezoelectric characteristics of the piezoelectric layer 70 may differ from other portions. For this reason, each piezoelectric element 300 formed on the flow path forming substrate 10 cut out from the central portion of the flow path forming substrate wafer 110 may have a variation in displacement characteristics and may be treated as a defective product. In particular, when a piezoelectric precursor film to be the piezoelectric layer 70 is formed by spin coating, such a problem is likely to occur.

  However, since the non-formed part 111 is provided in the central part of the flow path forming substrate wafer 110 as in this embodiment, the occurrence of defective products is suppressed and the number of picked up parts substantially increases. Therefore, the yield is greatly improved.

  In the present embodiment, the thin film portion 112 is formed only in the central portion of the flow path forming substrate wafer 110, but the formation position of the thin film portion 112 is not particularly limited. For example, the thin film portion 112 may be provided at any portion between the flow path forming substrates 10 as long as the warp of the flow path forming substrate wafer 110 can be eliminated. For example, as shown in FIG. 7, the non-formed part 111 and the thin film part 112 may be formed between the flow path forming substrates 10 together with the central part of the flow path forming substrate wafer 110. Thereby, the curvature of the flow path forming substrate wafer 110 can be more reliably prevented. Further, from the viewpoint of increasing the number of the flow path forming substrates 10, it is preferable to form the non-formed portion 111 at the center of the flow path forming substrate wafer 110 as described above. However, the non-forming portion 111 is not necessarily provided from the viewpoint of improving the dimensional accuracy of the piezoelectric element 300.

  After the piezoelectric element 300 is formed in this way, as shown in FIG. 8A, a metal layer 91 made of gold (Au) is formed over the entire surface of the flow path forming substrate wafer 110. A lead electrode 90 is formed by patterning the metal layer 91 for each piezoelectric element 300 through a mask pattern (not shown) made of the like. Next, as shown in FIG. 8B, a protective substrate wafer 130 on which a plurality of protective substrates 30 are integrally formed is bonded onto the flow path forming substrate wafer 110 with an adhesive 35. Here, a piezoelectric element holding portion 31, a reservoir portion 32, and the like are formed in advance on the protective substrate wafer 130. Next, as shown in FIG. 8C, after the flow path forming substrate wafer 110 is polished to a certain thickness, it is further wet-etched with hydrofluoric acid so that the flow path forming substrate wafer 110 has a predetermined thickness. To.

  Next, as shown in FIG. 9A, a protective film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, as shown in FIG. 9B, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the protective film 52, so that the pressure generating chamber is formed in the flow path forming substrate wafer 110. 12, an ink supply path 13, a communication path 14, and a communication portion 15 are formed. Thereafter, the nozzle plate 20 having the nozzles 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. The ink jet type recording head having the above-described structure is manufactured by dividing the flow path forming substrate wafer 110 and the like into a single chip size flow path forming substrate 10 as shown in FIG.

(Other embodiments)
As mentioned above, although one Embodiment of this invention was described, the structure of this invention is not limited to what was mentioned above. For example, in the above-described embodiment, the thin film portion 112 is formed after the piezoelectric layer 70 and the upper electrode film 80 are formed on the entire surface of the flow path forming substrate wafer 110. However, the present invention is not limited to this. . The thin film portion 112 may be formed before the piezoelectric element 300 is formed by patterning. For example, when the piezoelectric layer 70 and the upper electrode film 80 are formed, the piezoelectric layer 70 and the upper electrode film 80 are formed. You may make it form in the part except the center part (non-formation part 111) of the wafer 110 for flow path formation substrates.

  In the above-described embodiment, the thin film portion 112 is formed by removing the piezoelectric layer 70 and the upper electrode film 80. Of course, the lower electrode film 60 does not necessarily remain, and the piezoelectric body It may be removed together with the layer 70 and the like. Furthermore, the thin film portion 112 may be formed by removing only the lower electrode film 60. That is, the piezoelectric layer 70 and the upper electrode film 80 may remain in the thin film portion 112. Such a thin film portion 112 may be formed at the same time in the patterning step of the lower electrode film 60 before forming the piezoelectric layer 70 and the upper electrode film 80, for example.

  For example, in the above-described embodiment, an ink jet recording head that ejects ink is exemplified as the liquid ejecting head. However, the present invention is widely intended for the liquid ejecting head. Examples of the liquid ejecting head include a recording head used for an image recording apparatus such as a printer, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an organic EL display, and an electrode formation such as an FED (field emission display). Electrode material ejecting heads used in manufacturing, bioorganic matter ejecting heads used in biochip production, and the like.

  The present invention is not limited to a method for manufacturing a piezoelectric element used in a liquid ejecting head, but also a method for manufacturing a piezoelectric element mounted on any other device, for example, a microphone, a sounding body, various vibrators, an oscillator, and the like. Needless to say, it can also be applied.

  Further, the present invention can be applied not only to the liquid ejecting head but also to the manufacture of a thin film device in which a thin film element such as a piezoelectric element is formed on a device substrate, and the object is not particularly limited. Absent.

FIG. 2 is an exploded perspective view illustrating a schematic configuration of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 2 is a plan view of a flow path forming substrate wafer according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. FIG. 4 is a schematic diagram illustrating a manufacturing process of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. It is a top view which shows the modification of the wafer for flow-path formation board | substrates. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG.

Explanation of symbols

10 flow path forming substrate, 12 pressure generating chamber. DESCRIPTION OF SYMBOLS 13 Ink supply path, 14 Communication path, 15 Communication part, 20 Nozzle plate, 30 Protection board, 40 Compliance board, 50 Elastic film, 55 Insulator film, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 90 Lead electrode, 110 Channel forming substrate wafer, 111 Device non-forming portion, 112 Thin film portion, 130 Protective substrate wafer, 150 Resist film, 200 Mask, 300 Piezoelectric element

Claims (5)

A method of manufacturing a thin film device in which a thin film element is provided on a device substrate,
Forming a thin film element by forming an element forming film constituting the thin film element on a device wafer on which a plurality of the device substrates are integrally formed, and patterning the element forming film; Dividing the wafer into a plurality of the device substrates along a break pattern ,
And the step of forming the thin film element includes, before patterning the element formation film , providing a device non-formation portion in which the device substrate is not formed by being surrounded by the break pattern at the center of the device wafer ; and A method of manufacturing a thin film device, comprising a step of forming a thin film portion in which a part of the element formation film is not formed on the device non-forming portion .   The method of manufacturing a thin film device according to claim 1, wherein the thin film portion is formed between the device substrates of the device wafer. A liquid having a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening for ejecting liquid is formed, and a piezoelectric element that is provided on one side of the flow path forming substrate and applies pressure to the pressure generating chamber A method for manufacturing an ejection head, comprising:
Forming a piezoelectric element by forming an element forming film constituting the piezoelectric element on a flow path forming substrate wafer on which a plurality of the flow path forming substrates are integrally formed, and patterning the element forming film; And forming the pressure generating chamber in the flow path forming substrate wafer, and dividing the flow path forming substrate wafer into a plurality of flow path forming substrates along a break pattern ,
The step of forming the piezoelectric element includes forming a flow path in which the flow path forming substrate is not formed by being surrounded by the break pattern at the center of the flow path forming substrate wafer before patterning the element forming film. A method of manufacturing a liquid ejecting head, comprising a step of providing a substrate non-forming portion and forming a thin film portion in which a part of the element forming film is not formed on the flow path forming substrate non-forming portion .   The method of manufacturing a liquid jet head according to claim 3, wherein the thin film portion is formed between the flow path forming substrates of the flow path forming substrate wafer. A thin film device forming substrate integrally including a plurality of thin film devices in which thin film elements are formed on a device substrate,
A device non-formation portion in which the device substrate is not formed by being surrounded by the break pattern at a central portion of a device wafer in which a plurality of the device substrates are integrally formed with a break pattern interposed therebetween , and this device The thin film device forming substrate, wherein the non-formed part is a thin film part in which a part of the element forming film constituting the thin film element is not formed.

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