JP5244293B2 - Display device - Google Patents

Description

  The present invention relates to a display device in which an IC (Integrated Circuit) or the like is mounted by a method such as chip-on-glass (hereinafter referred to as COG). The electrical connection to the glass substrate is performed by aligning the solder bumps formed on the IC with the terminal pads formed on the substrate and then bringing them into close contact with each other to heat and melt the solder bumps. Alternatively, they are connected by a so-called wire bonding method in which a terminal coming out of the IC and a terminal on the substrate are connected by a wire. The present invention also relates to a display element sealing structure in which an IC is mounted by these methods.

Mobile phones, PDAs, digital cameras, and the like are required to have low power consumption, miniaturization, weight reduction, and multi-functionality. Therefore, in a display mounted on a mobile phone, a PDA, a digital camera, or the like, there is an increasing number of cases where a driver IC is directly mounted on a TFT substrate by a method such as COG (Chip On Glass) (see, for example, Patent Document 1). ).
Japanese Patent No. 2553956

  However, when the IC is mounted on the board as a driver, the driver IC itself has a certain height, so there is a difference in height on the board between the part where the driver IC is mounted and the part where the driver IC is not mounted. Will occur. FIG. 1 shows a cross-sectional view of the substrate when the driver IC 103 is mounted on the substrate 101. In the figure, reference numeral 102 denotes a pixel region. The display element device has a structure in which the display element is sandwiched between two substrates. When the substrate 101 and the counter substrate 106 are bonded to each other, the counter substrate is arranged with a uniform interval, and a sealing material is provided. Sealing is performed by adhering. At this time, if the distance between the substrate 101 and the counter substrate 106 is not uniform, the counter substrate is inclined as shown by the arrow in FIG. This also applies to a display device (passive display device) using a substrate in which a thin film transistor (TFT) is not formed over the substrate.

  Insufficient sealing of the display device causes deterioration of the display element and leads to a decrease in yield. In particular, organic EL (electroluminescence) elements and the like are chemically unstable and thus deteriorate immediately upon contact with oxygen or moisture. For this reason, a sealing structure for suppressing the intrusion of air and moisture from the outside becomes important. Further, if the IC is arranged outside the sealing region, the frame becomes large. For this reason, there are problems that the display area cannot be enlarged and the module cannot be reduced in size.

  The present invention solves this problem, and has a structure in which a layer (spacer layer) for adjusting the substrate interval for controlling the substrate interval is disposed in the panel. That is, a layer (spacer layer) having the same height as the IC and adjusting the substrate interval is provided on the same substrate. Here, the IC height refers to the height from the substrate surface to the upper surface of the IC when the IC is mounted on the substrate. Further, the height of the layer for adjusting the substrate interval refers to the height from the substrate surface to the upper surface of the layer for adjusting the substrate interval when the layer for adjusting the substrate interval is mounted on the substrate. In the present invention, the same height is not limited to exactly the same height. Specifically, the layer for adjusting the substrate interval (spacer layer) may have almost the same height as the IC, but the height of the layer for adjusting the substrate interval (spacer layer) is ± 0 of the height of the IC. It is preferable that it is within 3 mm. Furthermore, when an IC or a layer for adjusting the substrate interval is disposed in a sealing region using a sealing material or the like, it is necessary to take into account the height of the sealing material or the like. In this case, the first layer (material layer) including the IC and the sealing material is referred to as the first layer (material layer) including the IC, and the second layer (material layer) including the layer for adjusting the substrate interval and the sealing material is referred to as the second layer (material layer). I will do it. The height of the second layer (material layer) is preferably within ± 0.3 mm of the height of the first layer (material layer) including the IC. By adopting such a structure, the counter substrate can be disposed without tilting, and sufficient sealing can be performed. As a result, it contributes to the improvement of durability and reliability of the display element and the extension of the lifetime.

  When the driver IC is mounted in the sealing region of the display device, a so-called narrow frame (narrow frame) panel can be formed, and protection of the IC by a sealing material can be expected. Although the IC itself is packaged, the size of the IC becomes larger than the IC chip alone. Since ICs mounted by the COG method or the like are required to be miniaturized, when a packageless IC is to be mounted in the future, the sealing material is changed to IC by arranging the IC in the sealing region of the panel. It can serve as a chip protection. In this case, a sealing region is preferably formed so that a sealing material or the like covers the IC. At least the width of the sealing region including the sealing material with respect to the width of the IC can be widened to cover the side surface of the IC with the sealing material, thereby protecting the IC (FIG. 2B). The width of the IC may be narrower than the width of the sealing region, but as an example 2 mm or more and 3 mm or less, as another example, 1 mm or more and 2.5 mm or less, and as another example, 0.5 mm It can be applied to ICs with various widths, such as 1.5 mm or less. Of course, a sealing region may be formed so as to protect the upper and lower surfaces of the IC.

  The sealing region of the panel is also desirable as a place where the layer for adjusting the substrate interval (spacer layer) or the second layer (material layer) is disposed. Since the display device normally performs sealing at the four edges of the panel, it is sufficient to arrange the layer (spacer layer) or the second layer (material layer) for adjusting the substrate interval in the sealing region. Is demonstrated. FIG. 2 shows a cross-sectional view of the panel of the present invention in which the substrate 1 and the counter substrate 6 are bonded together. A layer (spacer layer) 4 for adjusting the substrate interval having the same height as the IC 3 is arranged with the pixel region 2 interposed therebetween. The sealing region is formed by using a sealing material 7 on the periphery and the edge of the panel provided with the IC 3 and the layer (spacer layer) 4 for adjusting the substrate interval. As shown in FIG. 2A, when the sealing material 7 is used, not only the IC 3 and the layer (spacer layer) 4 for adjusting the gap between the substrates have the same height but also the height including the sealing material. Must be adjusted to be the same. Specifically, the combined height of the layer for adjusting the substrate spacing (spacer layer) and the sealing material (that is, the height of the material layer) is the combined height of the IC and the sealing material (that is, IC The height of the material layer to be included is preferably within ± 0.3 mm. Further, the IC is not limited to a general driver IC, and may have other functions.

  In the structure of the present invention, a first layer (material layer) including an IC and a second layer (material layer) having the same height as the first layer (material layer) including an IC are provided on a substrate. It is characterized by. In addition, a first layer (material layer) including an IC is provided on one side of the substrate, and a second layer having the same height as the first layer (material layer) including the IC is provided on at least one other side. It is good also as a structure in which (material layer) is provided. Furthermore, the first layer (material layer) including the IC and the second layer (material layer) may be sandwiched between a substrate and a substrate having the same size or the same shape as the substrate. In the above structure, the IC may be connected to the substrate by a COG method or a COP method, and the second layer (material layer) may have any of a chip capacitor, a chip resistor, an IC, and the like. Further, the second layer (material layer) may contain any of glass, plastic film, and Si, or may be formed. The second layer (material layer) may include a layer for adjusting the substrate interval. The first layer (material layer) including the IC can also protect the IC by covering the IC with a sealing material.

  Another configuration of the present invention includes a voltage supply line, a drive circuit connected to the voltage supply line, and a chip capacitor on the substrate, and the chip resistor is provided between the voltage supply line and another wiring. It is characterized by being connected to. In the above configuration, the other wiring may be a second power supply line. Further, as another configuration, a voltage supply line, a signal line, a drive circuit connected to the voltage supply line and the signal line, and a chip resistor are provided on the substrate, and the chip resistor is the voltage supply line and the signal line. It may be connected between. Further, a signal line, a drive circuit connected to the signal line, and a chip resistor may be provided over the substrate, and the chip resistor may be inserted in series with the signal line. In the above configuration, the drive circuit may be formed of an IC chip, and the drive circuit may be connected to the substrate by a COG method or a COP method. According to the present invention, an electronic device having the display device having the above structure can be provided.

  As described above, in the display device in which the driver IC is connected and mounted on the substrate by the COG method or the like, the layer (spacer layer) or the second layer (material layer) for adjusting the substrate interval is arranged on the substrate. By doing so, the height difference can be controlled and the counter substrate can be arranged without tilting. Therefore, sealing with high bonding accuracy can be performed. As a result, it becomes a display element with high durability and reliability by preventing intrusion of air and moisture from the outside. Further, when the driver IC is mounted in the sealing region of the display device, a panel with a narrow frame (narrow frame) can be formed. Furthermore, it is possible to protect the driver IC with a sealing material or the like.

(Embodiment 1)
Hereinafter, embodiments of the present invention will be described with reference to FIGS. First, the substrate 1 is generally a glass substrate when the IC 3 is connected or mounted by the COG method. However, in the present invention, the substrate 1 can be applied to not only a glass substrate but also a plastic substrate, a Si wafer, or the like. When the IC 3 is directly connected to the electrode terminal on the plastic substrate, the COP method (Chip On Plastic, chip on plastic) is used.
In the present invention, regardless of the material of the substrate 1, a layer (spacer layer) 4 for adjusting the substrate interval can be provided on the substrate 1.

  Next, IC3 will be described. IC3 may be versatile. The IC package is preferably small and easy to mount. Alternatively, a single IC chip may be used. The electrical connection between the substrate 1 and the IC 3 is performed by aligning the solder bump formed on the IC with the terminal pad formed on the substrate, and then bringing the solder bump into close contact with each other to heat and melt the solder bump. Alternatively, they are connected by a so-called wire bonding method in which a terminal coming out of the IC and a terminal on the substrate are connected by a wire. As for the place where the IC 3 is arranged, if the IC 3 is arranged in the sealing region of the panel, a panel with a narrow frame (narrow frame) can be formed, and the sealing material 7 can serve to protect the IC. In the case where the IC is protected by the sealing material 7, the sealing material 7 may cover the IC 3. By making the width of the sealing material 7 wider than at least the width of the IC, the side surface of the IC can be covered with the sealing material to protect the IC (FIG. 2B). The width of the IC 3 may be narrower than the width of the sealing material 7, but as an example, 2 mm or more and 3 mm or less, as another example, 1 mm or more and 2.5 mm or less, and as another example, 0.5 mm It can be applied to ICs with various widths, such as 1.5 mm or less. Of course, a sealing region may be formed so as to protect the upper and lower surfaces of the IC.

  The layer (spacer layer) 4 for adjusting the substrate interval may be anything as long as it can control the height difference and can arrange the counter substrate 6 without tilting. For example, glass, plastic film, metal film, Si substrate, IC or the like can be used. Alternatively, it may be formed by CVD or spin coating. In this case, an insulating film such as a silicon oxide film or a silicon nitride film, a metal film, or a semiconductor film can be formed.

  It is desirable that the layer (spacer layer) 4 for adjusting the substrate interval has the same height as the height difference generated on the substrate 1 when the IC 3 is mounted. If cost is not considered, the same IC as IC3 can be formed. Further, the layer (spacer layer) 4 for adjusting the distance between the substrates may have substantially the same height as the IC. The height of the layer (spacer layer) 4 for adjusting the substrate interval is preferably within ± 0.3 mm of the height of the IC 3. More preferably, the height of the layer for adjusting the substrate interval (spacer layer) is within ± 0.05 mm of the height of IC3. As shown in FIG. 2A, when the sealing material 7 is used, not only the IC 3 and the layer (spacer layer) 4 for adjusting the gap between the substrates have the same height but also the height including the sealing material. Must be adjusted to be the same. Specifically, the combined height of the layer for adjusting the substrate spacing (spacer layer) and the sealing material (that is, the height of the material layer) is the combined height of the IC and the sealing material (that is, IC The height of the material layer to be included is preferably within ± 0.3 mm.

  The layer (spacer layer) 4 for adjusting the substrate interval may have an electrical function in addition to controlling the height difference. In that case, the layer (spacer layer) 4 for adjusting the distance between the substrates may be lower than the IC. As shown in FIG. 6, a chip capacitor (also referred to as a monolithic capacitor) 9 that functions as a storage capacitor of a power source can be disposed on the wiring 10 connected to the connection terminal 11. The chip capacitor 9 functions as a layer for controlling the height difference, and also functions as a holding capacitor for stabilizing the power supply. For example, when the chip capacitor 9 is disposed via the power supply line Vdd and the power supply line Vss, the chip capacitor 9 functions as a storage capacitor between two wirings, and stabilization of the power supply Vdd and the power supply Vss can be expected. The height of a chip capacitor is generally about 0.6 to 1.0 mm, and the height of an IC in which a package close to the chip size called CSP (Chip Size Package or Chip Scale Package) is made is 1.0 mm or less. is there. If a chip capacitor is selected according to the height of the IC, the height difference can be suppressed to within ± 0.1 mm of the IC height. The layer (spacer layer) 4 that adjusts the distance between the substrates having such an electrical function may be a chip resistor or the like.

  Here, a case where a chip capacitor or a chip resistor is used will be described.

  The chip capacitor is provided between a certain voltage supply line and another wiring. Here, the voltage supply line may be a wiring that supplies a certain potential, and examples thereof include a power supply line and a ground line, but are not particularly limited thereto. Other wiring is not particularly limited as long as it is other than a certain voltage supply line. For example, a dedicated wiring may be provided, or another voltage supply line may be used. The chip resistor may be provided between the signal line and the voltage supply line, or may be inserted in series with the signal line. Furthermore, a chip capacitor and a chip resistor may be used in combination.

  The chip capacitor is preferably attached to a wiring that continuously supplies a constant potential, such as a power supply line (Vdd line or the like) or a ground line (Vss line or GND line). By placing chip capacitors on these wiring that consumes a lot of electric charge, when the circuit connected to the wiring is in a situation where a large amount of current is consumed, the current accumulated in the capacitor can be used quickly. It is because it can supply. That is, by using the electric charge accumulated in the capacitor, it is possible to prevent the potential from being lowered due to a large current flowing. If there is no capacitor in the vicinity of the circuit that consumes current, charge is supplied from a far away place. In this case, the potential of the wiring is lowered due to the influence of the wiring resistance, and as a result, the circuit malfunctions. Therefore, by disposing a chip capacitor near a circuit that consumes current, that is, on a glass substrate, it is possible to prevent a potential drop and a malfunction of the circuit.

  When connecting a chip capacitor to a wiring, arrange a wiring only for connecting the chip capacitor, and apply a certain potential such as the power line (Vdd line, etc.) and ground line (Vss line, GND line) to the wiring. You may connect between the wiring which continues supplying. However, in that case, a dedicated wiring is required, so that a chip capacitor is interposed between wirings that continue to supply a constant potential, such as power supply lines (Vdd lines, etc.) and ground lines (Vss lines, GND lines). It is desirable to connect. Thereby, the number of wirings can be reduced. In the case where the chip capacitor is connected between the wirings, it is desirable to dispose the chip capacitor between a wiring having a high potential (high potential side power supply line) and a wiring having a low potential (low potential side power supply line). This is because more charges can be accumulated by connecting between wirings having a large potential difference.

  Note that it is desirable to connect a chip capacitor between wirings that continuously supply a constant potential in a portion that supplies a voltage from the outside to a pixel region and a driving circuit region that are integrally formed on the substrate. Thereby, in the pixel region and the drive circuit region, it is possible to reduce malfunctions due to voltage drop. In addition, it is desirable to connect a chip capacitor between wirings that continuously supply a constant potential to the external IC in a portion that supplies a voltage to the external IC such as COG from the outside. As a result, fluctuations in the voltage supplied to the external IC can be reduced, and malfunctions can be reduced. In addition, in a portion that supplies a voltage from an external IC such as a COG to a pixel region and a drive circuit region that are integrally formed on the substrate, between the wirings that continue to supply a constant potential (that is, from the external IC to the pixel region and It is desirable to connect a chip capacitor between wirings that output a potential to the drive circuit region. As a result, in the pixel region and the drive circuit region, it is possible to reduce operation failures due to voltage drop.

  Note that a voltage is supplied from the outside to the pixel region and the drive circuit region, a wire that supplies a voltage to the external IC such as COG, and an external IC such as COG is supplied to the pixel region and the drive circuit region. Chip capacitors may be arranged between the wirings or the like, or may be arranged in all of them.

  Further, a chip capacitor may be used in the charge pump circuit. However, the example shown here is only an example, and the use of the chip capacitor is not limited to these.

  The chip resistor may be used as a pull-up resistor or a pull-down resistor. That is, the amplitude of the input signal is not sufficiently large because a resistor is arranged between the signal line input to the external IC such as COG and the power line input to the external IC such as COG. However, since the potential of the power supply line is transmitted to the signal line through the resistor, the amplitude of the input signal is substantially increased, and the external IC is easily operated. In that case, by arranging the input IC in the vicinity of the input terminal of the external IC, it is possible to reduce malfunction of the circuit that inputs the input signal to the external IC. In addition, a chip resistor may be arranged in series between a signal line input to the external IC such as COG and an input terminal of the external IC. Accordingly, when static electricity enters the external IC, the static energy is attenuated by the resistance, and the external IC can be protected.

  In order to reduce the influence of static electricity, a chip resistor and a chip capacitor may be combined. In that case, since a delay due to RC occurs, even when an impulse signal due to static electricity or the like is input, the signal can be smoothed, the influence of static electricity can be reduced, and the element can be protected. Note that, when used for reducing static electricity or when used as a pull-up resistor or a pull-down resistor, the present invention is not limited to being used for a part that inputs to an external IC such as COG. You may arrange | position in the part output from external IC by COG etc., and the part supplied to the pixel area | region and drive circuit area | region integrally formed on the board | substrate. In this case, the same effect as that of the external IC can be obtained. In other words, by placing the chip resistor on the glass substrate, the external IC, the circuit that inputs the signal to the external IC, the pixel area and the drive circuit area that are integrally formed on the substrate are properly It becomes easy to operate and the influence of static electricity can be reduced. However, the example shown here is only an example, and the use of the chip resistor is not limited to these.

  Note that the chip capacitor and the chip resistor may be used for a layer for adjusting the substrate interval, or a layer for adjusting the substrate interval may be provided separately, and a chip capacitor and a chip resistor may be further provided. Even when providing a layer for adjusting the substrate interval, and further providing a chip capacitor and a chip resistor, by adjusting the height of the chip capacitor and the chip resistor to the height of the IC and the layer for adjusting the substrate interval, In addition, the substrate interval can be controlled with high accuracy.

When a TFT is manufactured on a substrate and a driving circuit and a driver are formed by this TFT, a layer (spacer layer) or a material layer for adjusting the substrate interval is disposed on the driving circuit and driver formed on the TFT substrate. You can also. An active matrix driving display device supplies a signal from a signal line driving circuit, scans from the scanning line driving circuit, and stores an external signal in each pixel. For example, in the case where a signal line driver circuit with high power consumption is mounted using an IC, a layer (spacer layer) or a material layer for adjusting the substrate interval can be arranged on the scanning line driver circuit formed over the TFT substrate.
Needless to say, the present invention can be applied to a display device in which TFTs are not formed on a substrate, that is, a passive display device.

When the IC 3 is provided on one side of the substrate 1, the layer (spacer layer) 4 for adjusting the substrate interval needs to be provided on at least one side of the substrate 1. When provided on one side, a layer (spacer layer) 4 for adjusting the substrate interval is disposed on the opposite side of the IC 3 across the pixel region 2. In FIG. 3, a layer (spacer layer) 4 for adjusting the substrate interval is disposed on the scanning line driving circuits 5 formed on both ends of the substrate 1 with the pixel region 2 interposed therebetween, and the pixel region 2 is interposed on the opposite side to the IC 3. Also, a structural diagram in which a layer (spacer layer) 4 for adjusting the substrate interval is arranged is shown. Further, as shown in FIG. 4, a layer (spacer layer) 4 for adjusting the distance between the substrates can be disposed so as to surround the periphery of the panel which is a sealing region of the display device. In this case, the counter substrate 6 can be arranged more stably than the arrangement example of FIG. 3, and the bonding property with the substrate 1 is increased.
Further, it is possible to form a layer (spacer layer) 4 for adjusting the substrate interval at all corners of the substrate 1 (FIG. 7A). Instead of all the corners, they may be arranged at two corners on one side opposite to the IC 3 across the pixel region 2 (FIG. 7B).

  The display device is sealed by bonding the substrate 1 and the counter substrate 6 with a sealant 7. In the case where a layer (spacer layer) for adjusting the distance between the substrates is disposed in the sealing region, a planarization film can be provided over the entire substrate or the sealing region before the sealing material is formed. The presence of the planarization film further increases the bonding property between the substrate 1 and the counter substrate 6. The planarizing film may be an organic film or an inorganic film.

  The sealing material 7 can be formed by a coating method using a dispenser or the like, a screen printing method, or the like. As the sealing material, a thermosetting material, a thermoplastic material, or an ultraviolet curable material can be used. Further, a sealing material may also be filled in the gap 8 between the substrate 1 and the counter substrate 6 that occurs outside the pixel region and the sealing region.

  The display form may be liquid crystal, organic EL, electronic paper, or the like. The present invention does not limit the display form.

  An adhesive is used for bonding the layer (spacer layer) 4 for adjusting the distance between the substrates. A terminal pad formed on the substrate 1 as in the case of mounting an IC when an electrical function is used as a layer (spacer layer) for adjusting the distance between the substrates and the placement location is not on a driver or wiring. A layer (spacer layer) 4 for adjusting the substrate interval may be disposed on the substrate, and the solder previously attached to the layer (spacer layer) for adjusting the substrate interval may be bonded by heating and melting. When a capacitor, such as a chip capacitor, having an electrical function is used as a layer (spacer layer) for adjusting the substrate interval, it is necessary to connect wiring in addition to bonding. In addition, an insulating layer needs to be provided in the bonding portion depending on the location of the layer (spacer layer) 4 for adjusting the substrate interval and the physical properties of the layer (spacer layer) 4 for adjusting the substrate interval. In particular, when the layer (spacer layer) 4 for adjusting the distance between the substrates is disposed on the driver or wiring, the conductor cannot be bonded as it is. Therefore, it is necessary to form an insulating film or the like between the TFT substrate and the layer (spacer layer) 4 for adjusting the distance between the substrates. When an adhesive having excellent electrical insulation is used, the adhesive may become an insulating layer. However, when the layer (spacer layer) 4 for adjusting the distance between the substrates has an electrical function and does not need to be insulated, a conductive resin material or the like is used as an adhesive.

  This is a step of forming the layer (spacer layer) 4 and the IC 3 for adjusting the substrate interval, and forming the substrate 3 at the same time or forming the layer (spacer layer) 4 for adjusting the substrate interval after the IC 3 is formed. The IC 3 can also be formed after the layer (spacer layer) 4 for adjusting the interval is formed. The sealing material is formed after forming the layer (spacer layer) 4 and the IC 3 for adjusting the distance between the substrates.

  The counter substrate 6 is applicable even if it is a glass substrate, a plastic substrate, a Si wafer, or the like. However, since the present invention is applied to a display device, at least one of the substrate 1 and the counter substrate 6 needs to be translucent. In the present invention, the substrate 1 and the counter substrate 6 are preferably in the same shape. As a result, not only the pixel region but also the IC 3 can be protected by the sealing material and the counter substrate 6.

  Finally, an IC 3, a layer (spacer layer) 4 for adjusting the substrate interval, and a sealing material 7 are formed on the substrate 1 by the above method, and then the counter substrate 6 is bonded.

(Embodiment 2)
A manufacturing method of a thin film transistor formed in a pixel region or a peripheral driver circuit region in the case where the present invention is an active matrix display device will be described with reference to FIGS.
Note that although a case where a crystalline semiconductor film is used is described in this embodiment mode, an amorphous semiconductor film or a single crystal semiconductor film may be used.

  First, as shown in FIG. 8A, a base film 501 is formed over a substrate 500. As the substrate 500, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. It is also possible to use a substrate made of a plastic such as PET, PES, or PEN, or a flexible synthetic resin such as acrylic.

  The base film 501 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 500 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon nitride or silicon oxide containing nitrogen that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used. In this embodiment, a silicon oxide film containing nitrogen is formed to a thickness of 10 nm to 400 nm (preferably 50 nm to 300 nm) by a plasma CVD method.

  Next, a semiconductor film 502 is formed over the base film 501. The thickness of the semiconductor film 502 is 25 nm to 100 nm (preferably 30 nm to 60 nm). Note that the semiconductor film 502 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon (Si) but also silicon germanium (SiGe) can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  Next, as shown in FIG. 8B, the semiconductor film 502 is irradiated with a linear laser 499 to be crystallized. In the case of performing laser crystallization, heat treatment for one hour at 500 ° C. may be added to the semiconductor film 502 in order to increase the resistance of the semiconductor film 502 to the laser before laser crystallization.

  For laser crystallization, a pulsed laser having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more can be used as a continuous wave laser or a pseudo CW laser.

Specifically, as a continuous wave laser, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, GdVO ₄ laser, Y ₂ O ₃ laser, ruby laser, alexandrite laser Ti: sapphire laser, helium cadmium laser, and the like.

As a pseudo CW laser, an Ar laser, a Kr laser, an excimer laser, a CO ₂ laser, a YAG laser, a YVO ₄ laser, a YLF laser, if the oscillation frequency is 10 MHz or more, preferably 80 MHz or more can be oscillated. A pulsed laser such as YAlO ₃ laser, GdVO ₄ laser, Y ₂ O ₃ laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser can be used.

  Such a pulsed laser has an effect equivalent to that of a continuous wave laser as the oscillation frequency is increased.

For example, when a solid-state laser capable of continuous oscillation is used, a crystal having a large grain size can be obtained by irradiating laser light of second to fourth harmonics. Typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a YAG laser (fundamental wave 1064 nm). For example, laser light emitted from a continuous wave YAG laser is converted into a harmonic by a non-linear optical element, and irradiated to the semiconductor film 502. Power density may be about 0.01 to 100 MW / cm ² (preferably 0.1~10MW / cm ^2).

  By irradiating the semiconductor film 502 with laser light, the crystalline semiconductor film 504 with higher crystallinity is formed.

  Next, as illustrated in FIG. 8C, the crystalline semiconductor film 504 is selectively etched, so that island-shaped semiconductor films 507 to 509 are formed.

Next, an impurity for threshold control is introduced into the island-shaped semiconductor film. In this embodiment mode, boron (B) is introduced into the island-shaped semiconductor film by doping diborane (B ₂ H ₆ ).

Next, an insulating film 510 is formed so as to cover the island-shaped semiconductor films 507 to 509. As the insulating film 510, for example, silicon oxide, silicon nitride, silicon oxide containing nitrogen (SiO _x N _y : x>y> 0), or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

  Next, after a conductive film is formed over the insulating film 510, the conductive film is selectively etched, so that gate electrodes 570 to 572 are formed.

  The gate electrodes 570 to 572 are formed using a structure in which a single conductive film or two or more conductive films are stacked. In the case where two or more conductive films are stacked, an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or the element as a main component The gate electrodes 570 to 572 may be formed by stacking alloy materials or compound materials to be stacked. Alternatively, the gate electrode may be formed using a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P).

  In the present embodiment, the gate electrodes 570 to 572 are formed as follows. First, as the first conductive film 511, for example, a tantalum nitride film is formed with a thickness of 10 to 50 nm, for example, 30 nm. Then, as the second conductive film 512, for example, a tungsten (W) film is formed with a thickness of 200 to 400 nm, for example, 370 nm, over the first conductive film 511, and the first conductive film 511 and the second conductive film 512 are formed. Is formed (FIG. 8D).

  Next, the second conductive film 512 is etched by anisotropic etching to form upper gate electrodes 560 to 562 (FIG. 9A). Next, the first conductive film 511 is etched by isotropic etching to form lower gate electrodes 563 to 565 (FIG. 9B). Thus, gate electrodes 570 to 572 are formed.

  The gate electrodes 570 to 572 may be formed as part of the gate wiring, or another gate wiring may be formed and the gate electrodes 570 to 572 may be connected to the gate wiring.

  Then, an impurity imparting one conductivity (n-type or p-type conductivity) to each of the island-shaped semiconductor films 507 to 509 is used using a gate electrode 570 to 572 or a resist selectively formed as a mask. By adding, a source region, a drain region, a low-concentration impurity region, and the like are formed.

First, using phosphine (PH ₃ ), phosphorus (P) is introduced into the island-shaped semiconductor film with an acceleration voltage of 60 to 120 kV and a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . When this impurity is introduced, channel formation regions 522 and 527 of n-channel TFTs 550 and 552 are formed.

Further, in order to manufacture the p-channel TFT 551, diborane (B ₂ H ₆ ) is applied with an applied voltage of 60 to 100 kV, for example, 80 kV, and a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁵ cm ⁻² , for example, 3 × 10 ¹⁵ cm ^{−. Under} the condition (2), boron (B) is introduced into the island-shaped semiconductor film. Accordingly, a source region or a drain region 523 of the p-channel TFT and a channel formation region 524 are formed when this impurity is introduced (FIG. 9C).

  Next, the insulating film 510 is selectively etched to form gate insulating films 580 to 582.

After the gate insulating films 580 to 582 are formed, an applied voltage of 40 to 80 kV, for example, 50 kV, and a dose amount of 1.0 × 10 6 using phosphine (PH ₃ ) in the n-channel TFT and the island-shaped semiconductor films 550 and 552. Phosphorus (P) is introduced at ^{15 to} 2.5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . Thus, low-concentration impurity regions 521 and 526 and source or drain regions 520 and 525 of the n-channel TFT are formed (FIG. 10A).

In this embodiment, the source or drain regions 520 and 525 of the n-channel TFTs 550 and 552 each contain phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ^−3. It becomes. Each of the low-concentration impurity regions 521 and 526 of the n-channel TFTs 550 and 552 contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ . Further, the source or drain region 523 of the p-channel TFT 551 contains boron (B) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ .

  Next, a first interlayer insulating film 530 is formed to cover the island-shaped semiconductor films 507 to 509 and the gate electrodes 570 to 572 (FIG. 10B).

As the first interlayer insulating film 530, an insulating film containing silicon, for example, a silicon oxide film, a silicon nitride film, or a silicon oxide film containing nitrogen (SiO _x N _y : x>y>) is formed by plasma CVD or sputtering. 0) or a laminated film thereof. Needless to say, the first interlayer insulating film 530 is not limited to a silicon oxide film or silicon nitride film containing nitrogen, or a laminated film thereof, and other insulating films containing silicon may be used as a single layer or a laminated structure. .

  Next, the whole is heated at 410 ° C. for 1 hour, and hydrogen is released by releasing hydrogen from the silicon oxide film containing nitrogen. However, this is not necessary when the heat treatment is performed at 550 ° C. for 4 hours in the above-described nitrogen atmosphere.

  Next, a second interlayer insulating film 531 that functions as a planarization film is formed so as to cover the first interlayer insulating film 530.

  As the second interlayer insulating film 531, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), a bond of silicon (Si) and oxygen (O) (Si- A material having a skeletal structure composed of (O—Si bond) and containing at least hydrogen as a substituent, or having at least one of fluorine, alkyl group, and aromatic hydrocarbon as a substituent, a so-called siloxane, and a laminate thereof A structure can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  In this embodiment mode, siloxane is formed as the second interlayer insulating film 531 by a spin coating method.

  The first interlayer insulating film 530 and the second interlayer insulating film 531 are etched to form contact holes reaching the island-shaped semiconductor films 507 to 509 in the first interlayer insulating film 530 and the second interlayer insulating film 531.

Note that a third interlayer insulating film may be formed on the second interlayer insulating film 531, and contact holes may be formed in the first to third interlayer insulating films. As the third interlayer insulating film, a film that hardly transmits moisture, oxygen, or the like as compared with other insulating films is used. Typically, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (SiN _x O _y film (x>y> 0) or SiO _x N _y film (x> y) obtained by a sputtering method or a CVD method. > 0)), a thin film mainly containing carbon (for example, a DLC film, a CN film), or the like can be used.

  A third conductive film is formed over the second interlayer insulating film 531 through a contact hole, and the first conductive film is selectively etched to form electrodes or wirings 540 to 544.

  In this embodiment mode, a metal film is used for the third conductive film. As the metal film, a film made of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, after a titanium film (Ti), a titanium nitride film, a silicon-aluminum alloy film (Al-Si), and a titanium film (Ti) are stacked to 60 nm, 40 nm, 300 nm, and 100 nm, respectively, a desired shape is obtained. The electrodes or wirings 540 to 544 are formed by selective etching.

  Further, the electrodes or wirings 540 to 544 may be formed of an aluminum alloy film containing at least one element of nickel, cobalt, and iron, and carbon. Such an aluminum alloy film can prevent mutual diffusion of silicon and aluminum even when it comes into contact with silicon. In addition, since such an aluminum alloy film does not cause an oxidation-reduction reaction even when it comes into contact with a transparent conductive film, for example, an ITO (Indium Tin Oxide) film, both can be brought into direct contact with each other. Furthermore, such an aluminum alloy film is useful as a wiring material because of its low specific resistance and excellent heat resistance.

  Each of the electrodes or wirings 540 to 544 may be formed with electrodes and wirings at the same time, or electrodes and wirings may be separately formed and connected.

  Through the above series of steps, a CMOS circuit 553 including the n-channel TFT 550 and the p-channel TFT 551 and a semiconductor device including the n-channel TFT 552 can be formed (FIG. 10C). Note that the method for manufacturing the semiconductor device is not limited to the above-described manufacturing steps after the formation of the island-shaped semiconductor film. Further, a semiconductor device including a TFT using an amorphous semiconductor film and a TFT using a single crystal semiconductor film may be used.

(Embodiment 3)
Here, an example of manufacturing a liquid crystal display device (Liquid Crystal Display (LCD)) is shown.

  A manufacturing method of a display device described in this embodiment is a method of manufacturing a pixel portion including a pixel TFT and a TFT of a driver circuit portion provided around the pixel portion at the same time. However, in order to simplify the explanation, a CMOS circuit which is a basic unit with respect to the drive circuit is illustrated.

  First, formation of electrodes or wirings 540 to 544 in FIG. 10C is performed based on the method described in the above embodiment mode. In addition, the same thing as the said embodiment is represented with the same code | symbol.

  Next, a third interlayer insulating film 610 is formed over the second interlayer insulating film 531 and the electrodes or wirings 540 to 544. Note that the third interlayer insulating film 610 can be formed using a material similar to that of the second interlayer insulating film 531.

Next, a resist mask is formed using a photomask, and a part of the third interlayer insulating film 610 is removed by dry etching to form an opening (a contact hole is formed). In this contact hole formation, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) were used as etching gases at flow rates of 50 sccm, 50 sccm, and 30 sccm, respectively. Note that the bottom of the contact hole reaches the electrode or wiring 544.

  Next, after removing the resist mask, a fourth conductive film is formed over the entire surface. Next, the fourth conductive film is selectively etched using a photomask, so that the pixel electrode 623 electrically connected to the electrode or the wiring 544 is formed (FIG. 11). In this embodiment mode, since a reflective liquid crystal display panel is manufactured, the pixel electrode 623 is formed of Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), or the like by sputtering. What is necessary is just to form using the metal material which has light reflectivity.

When a transmissive liquid crystal display panel is manufactured, a transparent conductive film such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), or tin oxide (SnO ₂ ) is used. A pixel electrode 623 is formed.

  FIG. 13 shows an enlarged top view of a part of the pixel portion 650 including the pixel TFT. FIG. 13 shows a state in which the pixel electrode is being formed. In the left pixel, the pixel electrode is formed, but in the right pixel, the pixel electrode is not formed. In FIG. 13, a diagram cut along a solid line A-A ′ corresponds to the cross section of the pixel portion in FIG. 11, and the same reference numerals are used for portions corresponding to FIG. 11.

  As shown in FIG. 13, the gate electrode 572 is connected to the gate wiring 630. The electrode or wiring 543 is formed integrally with the source wiring.

  In addition, a capacitor wiring 631 is provided, and the storage capacitor is formed of the pixel electrode 623 and the capacitor wiring 631 overlapping the pixel electrode, using the first interlayer insulating film 530 as a dielectric.

  In this embodiment, in the region where the pixel electrode 623 and the capacitor wiring 631 overlap, the second interlayer insulating film 531 and the third interlayer insulating film 610 are etched, and the storage capacitor is the pixel electrode 623 and the first interlayer insulating film 530. And the capacitor wiring 631. However, if the second interlayer insulating film 531 and the third interlayer insulating film 610 can also be used as dielectrics, the second interlayer insulating film 531 and the third interlayer insulating film 610 need not be etched. In that case, the first interlayer insulating film 530, the second interlayer insulating film 531 and the third interlayer insulating film 610 function as a dielectric. Alternatively, only the third interlayer insulating film 610 may be etched, and the first interlayer insulating film 530 and the second interlayer insulating film 531 may be used as a dielectric.

  Through the above steps, the CMOS circuit 553 and the pixel electrode 623 including the top gate type pixel TFT (n channel type TFT) 552, the top gate type n channel type TFT 550, and the top gate type p channel type TFT 551 are formed on the substrate 500. The TFT substrate of the liquid crystal display device thus formed is completed. Although a top gate TFT is formed in this embodiment mode, a bottom gate TFT can be used as appropriate.

  Next, the IC 3 is mounted on the substrate 500. The electrical connection of the driver IC is performed by aligning the solder bump formed on the IC with the terminal pad formed on the substrate 500, and then bringing the two into close contact and heating and melting the solder bump. Alternatively, the terminals coming out of the IC and the terminals on the substrate are connected by a so-called wire bonding method (not shown). Thereafter, a layer (spacer layer) 4 for adjusting the substrate interval is disposed on, for example, the CMOS circuit 553 constituting the scanning line driving circuit as shown in FIG. 3 to control the height difference on the substrate 500 (FIG. 12). .

  Next, an alignment film 624 a is formed so as to cover the pixel electrode 623. Note that the alignment film 624a may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 624a.

  The counter substrate 625 is provided with a color filter composed of a colored layer 626a, a light shielding layer (black matrix) 626b, and an overcoat layer 627, a counter electrode 628 composed of a transparent electrode or a reflective electrode, and an alignment film thereon. 624b is formed (FIG. 12). The counter substrate 625 can have the same size or the same shape as the substrate 500. Here, the same size and the same shape do not need to be exactly the same, but a size and a shape sufficient to constitute a panel. Then, a sealing material 600 having a closed pattern is formed so as to surround a region overlapping with the pixel portion 650 including the pixel TFT by a droplet discharge method (FIG. 14A). Here, an example in which a sealing material 600 having a closed pattern is drawn in order to drop liquid crystal is shown. However, a dip type (in which liquid crystal is injected by using a capillary phenomenon after providing a sealing pattern having an opening and bonding the substrate 500 together) A pumping type) may be used.

  Next, the liquid crystal composition 629 is dropped under reduced pressure so that bubbles do not enter (FIG. 14B), and both the substrates 500 and 625 are attached (FIGS. 12 and 14C). The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As an alignment mode of the liquid crystal composition 629, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from the light incident direction to the light emission direction is used. And it bonds so that the rubbing direction of a board | substrate may orthogonally cross.

  Next, the substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance (FIGS. 12 and 14D).

  Then, an FPC (Flexible Printed Circuit) is attached through an anisotropic conductor layer using a known technique. The liquid crystal display device is completed through the above steps. If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the TFT substrate and the counter substrate.

  As described above, in this embodiment, a liquid crystal display device can be manufactured using the method described in the above embodiment and further using a TFT having a crystalline semiconductor film. Accordingly, a highly reliable liquid crystal display device can be manufactured. The liquid crystal display device manufactured in this embodiment can be used as a display portion of various electronic devices.

  Note that in this embodiment mode, the TFT is a top gate type TFT, but the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. is there. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  Further, this embodiment mode can be freely combined with any description of the above embodiment modes as necessary.

(Embodiment 4)
Here, an example of manufacturing a dual emission display device in which the present invention can be used is shown.

  First, the island-shaped semiconductor films 507 to 509 in FIG. 8C are formed based on the embodiment mode. In addition, the same thing as the said embodiment is represented with the same code | symbol.

Next, impurities for threshold control are introduced into the island-shaped semiconductor films 507 to 509. In this embodiment mode, boron (B) is introduced into the island-shaped semiconductor film by doping diborane (B ₂ H ₆ ).

Next, an insulating film 700 is formed so as to cover the island-shaped semiconductor films 507 to 509 (FIG. 15A). For the insulating film 700, for example, silicon oxide, silicon nitride, silicon oxide containing nitrogen (SiO _x N _y : x>y> 0), or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

  Next, after a conductive film is formed over the insulating film 700, the conductive film is selectively etched, so that gate electrodes 707 to 709 are formed.

  The gate electrodes 707 to 709 are formed using a structure in which a single conductive film or two or more conductive films are stacked. In the case where two or more conductive films are stacked, an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or the element as a main component The gate electrodes 707 to 709 may be formed by stacking alloy materials or compound materials to be stacked. Alternatively, the gate electrode may be formed using a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P).

  In this embodiment, gate electrodes 707 to 709 are formed using a stacked film in which tantalum nitride and tungsten (W) are stacked to have a thickness of 30 nm and 370 nm, respectively. In this embodiment mode, upper layer gate electrodes 701 to 703 are formed using tungsten (W), and lower layer gate electrodes 704 to 706 are formed using tantalum nitride.

  The gate electrodes 707 to 709 may be formed as part of the gate wiring, or a gate wiring may be formed separately and the gate electrodes 707 to 709 may be connected to the gate wiring.

  Then, using gate electrodes 707 to 709 or a resist selectively formed as a mask, an impurity imparting n-type or p-type conductivity is added to the island-shaped semiconductor films 507 to 509, and the source region, A drain region, a low concentration impurity region, and the like are formed.

First, impurities are selectively added to the island-shaped semiconductor films 507 and 508 to be the n-channel TFTs 761 and 762. Phosphine (PH ₃ ) is used to introduce phosphorus (P) into the island-shaped semiconductor film with an acceleration voltage of 60 to 120 kV and a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . By this impurity introduction, channel formation regions 713 and 716 of the n-channel TFTs 761 and 762 are formed.

In order to manufacture a p-channel TFT, an impurity is selectively added to the island-shaped semiconductor film 509 to be the p-channel TFT 763. Diborane (B ₂ H ₆ ) is applied to the island-shaped semiconductor film under the conditions of an applied voltage of 60 to 100 kV, for example, 80 kV, a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁵ cm ⁻² , for example, 3 × 10 ¹⁵ cm ^−2. Boron (B) is introduced. Thus, a source region or a drain region 717 of the p-channel TFT 763 and a channel formation region 718 are formed by introducing this impurity (FIG. 15A).

  Next, the insulating film 700 is selectively etched to form gate insulating films 721 to 723.

After the gate insulating films 721 to 723 are formed, an applied voltage of 40 to 80 kV, for example, 50 kV, a dose amount of 1.0 × is applied to the island-shaped semiconductor films 507 and 508 to be the n-channel TFTs 761 and 762 by using phosphine (PH ₃ ). Phosphorus (P) is introduced at 10 ^{15 to} 2.5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . Thus, low-concentration impurity regions 712 and 715 and source or drain regions 711 and 714 of the n-channel TFTs 761 and 762 are formed (FIG. 15B).

In this embodiment, the source or drain regions 711 and 714 of the n-channel TFTs 761 and 762 each contain phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ^−3. It becomes. Each of the low-concentration impurity regions 712 and 715 of the n-channel TFTs 761 and 762 contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ . Further, the source or drain region 717 of the p-channel TFT 763 contains boron (B) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ .

  In this embodiment mode, the p-channel TFT 763 is used as a pixel TFT of the dual emission display device. The n-channel TFTs 761 and 762 are used as TFTs of a drive circuit that drives a pixel TFT (p-channel TFT) 763. However, the pixel TFT is not necessarily a p-channel TFT, and an n-channel TFT may be used. In addition, the driving circuit does not have to be a circuit in which a plurality of n-channel TFTs are combined. May be.

  Next, an insulating film 730 containing hydrogen is formed, and then the impurity element added to the island-shaped semiconductor film is activated. The activation of the impurity element may be performed by the laser processing method described in the above embodiment mode. Alternatively, after forming the insulating film containing hydrogen, the impurity may be activated by heating at 550 ° C. for 4 hours in a nitrogen atmosphere.

As the insulating film containing hydrogen, a silicon oxide film containing nitrogen (SiO _x N _y film: x>y> 0) obtained by a PCVD method is used. Alternatively, a silicon nitride film containing oxygen (SiN _x O _y film: x>y> 0) may be used. In the case where the semiconductor film is crystallized using a metal element that promotes crystallization, typically nickel, gettering that reduces nickel in the channel formation region at the same time as activation can be performed. Note that the insulating film 730 containing hydrogen is a first interlayer insulating film and a light-transmitting insulating film containing silicon oxide.

  Thereafter, the whole is heated at 410 ° C. for 1 hour to hydrogenate the island-shaped semiconductor film.

  Next, a planarizing film to be the second interlayer insulating film 731 is formed. As the planarizing film, a light-transmitting inorganic material (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzo Cyclobutene) or a laminate of these. Other light-transmitting films used for the planarizing film include insulating films made of SiOx films containing alkyl groups obtained by a coating method, such as silica glass, alkylsiloxane polymers, alkylsilsesquioxane polymers, hydrogen An insulating film formed using a silsesquioxane hydride polymer, a hydrogenated alkyl silsesquioxane polymer, or the like can be used. Examples of the siloxane polymer include PSB-K1 and PSB-K31, which are Toray-made coating insulating film materials, and ZRS-5PH, which is a catalytic chemical coating insulating film material.

  Next, a light-transmitting third interlayer insulating film 732 is formed. The third interlayer insulating film 732 is provided as an etching stopper film for protecting the planarizing film that is the second interlayer insulating film 731 when the transparent electrode 750 is selectively etched in a later step. However, when the transparent electrode 750 is selectively etched, the third interlayer insulating film 732 is not necessary if the second interlayer insulating film 731 is an etching stopper film.

Next, contact holes are formed in the first interlayer insulating film 730, the second interlayer insulating film 731 and the third interlayer insulating film 732 using a new mask. Next, after removing the mask and forming a conductive film (a laminated film of titanium nitride, aluminum and titanium nitride), etching (dry etching with a mixed gas of BCl ₃ and Cl ₂ ) is performed using another mask. Then, electrodes or wirings 741 to 745 (TFT source wiring and drain wiring, current supply wiring, etc.) are formed (FIG. 15C). However, although the electrode and the wiring are integrally formed in this embodiment mode, the electrode and the wiring may be separately formed and electrically connected. Titanium nitride is one of materials that have good adhesion to the high heat resistant planarization film. In addition, the nitrogen content of titanium nitride is preferably less than 44 atomic% in order to make good ohmic contact with the source or drain region of the TFT.

  Next, the transparent electrode 750, that is, the anode of the organic light emitting element is formed in a thickness of 10 nm to 800 nm using a new mask. As the transparent electrode 750, in addition to indium tin oxide (ITO), for example, an indium tin oxide containing Si element, or a target in which 2 to 20 wt% zinc oxide (ZnO) is mixed with indium oxide is used. A transparent conductive material having a high work function (work function of 4.0 eV or more) such as formed IZO (Indium Zinc Oxide) can be used (FIG. 16A).

  Next, an insulator 733 (referred to as a partition wall, a barrier, or the like) that covers the edge portion of the transparent electrode 750 is formed using a new mask. As the insulator 733, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene) obtained by a coating method, or an SOG film (for example, an SiOx film containing an alkyl group) is used. Is used in a film thickness range of 0.8 μm to 1 μm.

  Next, the first layer 751, the second layer 752, the third layer 753, the fourth layer 754, and the fifth layer 755 containing an organic compound are formed by an evaporation method or a coating method. Note that in order to improve the reliability of the light-emitting element, it is preferable to perform deaeration by performing vacuum heating before the formation of the first layer 751. For example, before vapor deposition of the organic compound material, it is desirable to perform a heat treatment at 200 ° C. to 300 ° C. in a reduced pressure atmosphere or an inert atmosphere in order to remove gas contained in the substrate. Note that when the interlayer insulating film and the partition walls are formed of SiOx films having high heat resistance, higher heat treatment (410 ° C.) can be applied.

  First, molybdenum oxide (MoOx) and 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (α-NPD) are selectively formed on the transparent electrode 750 using a vapor deposition mask. ) And rubrene are co-evaporated to form a first layer 751 containing an organic compound.

  In addition to MoOx, a material having a high hole injection property such as copper phthalocyanine (CuPC), vanadium oxide (VOx), ruthenium oxide (RuOx), or tungsten oxide (WOx) can be used. In addition, a high-hole-injection polymer material such as poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is used to form a first film containing an organic compound. The layer 751 may be used.

  Next, α-NPD is selectively deposited using a deposition mask, so that a hole-transporting layer (second layer) 752 is formed over the first layer 751 containing an organic compound. In addition to α-NPD, 4,4′-bis [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N , N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: A material having a high hole transporting property typified by an aromatic amine compound such as MTDATA) can be used.

  Next, a light-emitting layer 753 (third layer) is selectively formed. In order to obtain a full-color display device, the vapor deposition mask is aligned for each of the emission colors (R, G, B) to selectively deposit each.

For the light-emitting layer 753R that emits red light, a material such as Alq ₃ : DCM or Alq ₃ : rubrene: BisDCJTM is used. For the light-emitting layer 753G that emits green light, a material such as Alq ₃ : DMQD (N, N′-dimethylquinacridone) or Alq ₃ : coumarin 6 is used. For the light-emitting layer 753B that emits blue light, a material such as α-NPD or tBu-DNA is used (FIG. 8).

Next, Alq ₃ (tris (8-quinolinolato) aluminum) is selectively deposited using a deposition mask, so that an electron-transporting layer (fourth layer) 754 is formed over the light-emitting layer 753. In addition to Alq ₃ , tris (5-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl) A material having a high electron transport property typified by a metal complex having a quinoline skeleton such as -8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq) or a benzoquinoline skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) -benzothiazolate] zinc (abbreviation: Zn ( A metal complex having an oxazole-based or thiazole-based ligand such as BTZ) ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5 (4-Biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2 1, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used as the electron-transport layer 754 because of their high electron-transport properties.

Next, 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs) and lithium (Li) are co-evaporated to cover the electron transport layer and the insulator, and an electron injection layer is formed over the entire surface. (Fifth layer) 755 is formed. By using the benzoxazole derivative (BzOS), damage due to the sputtering method at the time of forming the transparent electrode 756 performed in a later process is suppressed. In addition to BzOs: Li, a material having a high electron injection property such as an alkali metal or alkaline earth metal compound such as calcium fluoride (CaF ₂ ), lithium fluoride (LiF), cesium fluoride (CsF), or the like. Can be used. In addition, a mixture of Alq ₃ and magnesium (Mg) can also be used.

  Next, a transparent electrode 756, that is, a cathode of an organic light-emitting element is formed over the fifth layer 755 in a thickness range of 10 nm to 800 nm. The transparent electrode 756 is formed using, in addition to indium tin oxide (ITO), for example, a target in which 2 to 20 wt% zinc oxide (ZnO) is mixed with indium tin oxide containing Si element or indium oxide. IZO (Indium Zinc Oxide) can be used.

  As described above, a light emitting element is manufactured. The materials for the anode, the layer containing the organic compound (first to fifth layers), and the cathode constituting the light-emitting element are appropriately selected, and the thicknesses of the materials are also adjusted. It is desirable that the same material is used for the anode and the cathode, and the film thickness is approximately the same, preferably approximately 100 nm.

  Further, if necessary, a transparent protective layer 757 that covers the light emitting element and prevents moisture from entering is formed. As the transparent protective layer 757, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (SiNO film (composition ratio N> O)) or a silicon oxide film containing nitrogen (SiON film) obtained by sputtering or CVD is used. (Composition ratio N <O)), a thin film containing carbon as a main component (for example, a DLC (diamond-like carbon) film, a CN film), or the like can be used (FIG. 16B).

  Next, the IC 3 is mounted on the substrate 500. The electrical bonding of the IC 3 is performed by aligning the solder bumps formed on the IC 3 with the terminal pads formed on the substrate 500 and then bringing them into close contact with each other to heat and melt the solder bumps. Alternatively, the terminals coming out of the IC and the terminals on the substrate are connected by a so-called wire bonding method (not shown). Thereafter, a layer (spacer layer) 4 for adjusting the substrate interval is disposed on, for example, n-channel TFTs 761 and 762 constituting the drive circuit as shown in FIG. 3 to control the height difference on the substrate 500 (FIG. 16). (B)).

  Next, the second substrate 770 and the substrate 500 are attached to each other using a sealing material for ensuring the substrate interval. The second substrate 770 may also be a light transmissive glass substrate, a quartz substrate, or the like. The second substrate 770 can have the same size or the same shape as the first substrate 500. Here, the same size and the same shape do not need to be exactly the same, but a size and a shape sufficient to constitute a panel. In addition, a desiccant may be disposed as a gap (inert gas) between the pair of substrates, or a transparent sealing material (such as an ultraviolet curing or thermosetting epoxy resin) is filled between the pair of substrates. Also good.

  In the light emitting element, since the transparent electrodes 750 and 756 are formed of a light-transmitting material, light can be taken from one light emitting element in two directions, that is, from both sides.

  With the panel configuration described above, light emission from the upper surface and light emission from the lower surface can be made substantially the same.

  Finally, optical films (polarizing plates or circularly polarizing plates) 771 and 772 are provided to improve contrast (FIG. 17).

  FIG. 18 shows a cross-sectional view of a light emitting element for each emission color (R, G, B). The red (R) light emitting element includes a pixel TFT 763R, a transparent electrode (anode) 750R, a first layer 751R, a second layer (hole transport layer) 752R, a third layer (light emitting layer) 753R, and a fourth layer. A layer (electron transport layer) 754R, a fifth layer (electron injection layer) 755, a transparent electrode (cathode) 756, and a transparent protective layer 757;

  The green (G) light emitting element includes a pixel TFT 763G, a transparent electrode (anode) 750G, a first layer 751G, a second layer (hole transport layer) 752G, a third layer (light emitting layer) 753G, A fourth layer (electron transport layer) 754G, a fifth layer (electron injection layer) 755, a transparent electrode (cathode) 756, and a transparent protective layer 757.

  Further, the blue (B) light-emitting element includes a pixel TFT 763B, a transparent electrode (anode) 750B, a first layer 751B, a second layer (hole transport layer) 752B, a third layer (light-emitting layer) 753B, A fourth layer (electron transport layer) 754B, a fifth layer (electron injection layer) 755, a transparent electrode (cathode) 756, and a transparent protective layer 757.

  Note that in this embodiment mode, the TFT is a top gate type TFT, but the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. is there. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  Further, this embodiment mode can be freely combined with any description of the above embodiment modes as necessary.

(Embodiment 5)
As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), an image playback device provided with a recording medium (specifically, a device provided with a display capable of playing back a recording medium such as a Digital Versatile Disc (DVD) and displaying the image). It is done. Specific examples of these electronic devices are shown below.

  FIG. 19 shows a liquid crystal module or an EL (electroluminescence) module in which a display panel 5001 and a circuit board 5011 are combined. A circuit board 5011 is provided with a control circuit 5012, a signal dividing circuit 5013, and the like, and is electrically connected to the display panel 5001 through a connection wiring 5014.

  The display panel 5001 includes a pixel portion 5002 provided with a plurality of pixels, a scanning line driver circuit 5003, and a signal line driver circuit 5004 for supplying a video signal to the selected pixel. Note that in the case of manufacturing an EL module or a liquid crystal module, the display panel 5001 may be manufactured using the above embodiment mode.

  A liquid crystal television receiver or an EL television receiver can be completed with the liquid crystal module or the EL module shown in FIG. FIG. 20 is a block diagram illustrating a main configuration of a liquid crystal television receiver or an EL television receiver. A tuner 5101 receives a video signal and an audio signal. The video signal includes a video signal amplifying circuit 5102, a video signal processing circuit 5103 that converts a signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and the video signal as input specifications of the driver IC. Processing is performed by a control circuit 5012 for conversion. The control circuit 5012 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 5013 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 5101, the audio signal is sent to the audio signal amplifier circuit 5105, and the output is supplied to the speaker 5107 through the audio signal processing circuit 5106. The control circuit 5108 receives control information on the receiving station (reception frequency) and volume from the input unit 5109 and sends a signal to the tuner 5101 and the audio signal processing circuit 5106.

  As shown in FIG. 21A, a television receiver can be completed by incorporating a liquid crystal module or an EL module into a housing 5201. A display screen 5202 is formed by a liquid crystal module or an EL module. In addition, a speaker 5203, an operation switch 5204, and the like are provided as appropriate.

  FIG. 21B shows a television receiver that can carry only a display wirelessly. A housing and a signal receiver are incorporated in the housing 5212, and the display portion 5213 and the speaker portion 5217 are driven by the battery. The battery can be repeatedly charged by a charger 5210. The charger 5210 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 5212 is controlled by operation keys 5216. The device illustrated in FIG. 21B can also be called a video / audio two-way communication device because a signal can be sent from the housing 5212 to the charger 5210 by operating the operation key 5216. In addition, by operating the operation key 5216, a signal is transmitted from the housing 5212 to the charger 5210, and further, a signal that can be transmitted by the charger 5210 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device. The present invention can be applied to the display portion 5213.

  By using the present invention for the television receiver shown in FIGS. 19 to 21, a highly reliable television receiver can be manufactured.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

  FIG. 22A shows a module in which a display panel 5301 and a printed wiring board 5302 are combined. The display panel 5301 includes a pixel portion 5303 provided with a plurality of pixels, a first scan line driver circuit 5304, a second scan line driver circuit 5305, and a signal line driver circuit that supplies a video signal to the selected pixel. 5306 is provided.

  The printed wiring board 5302 is provided with a controller 5307, a central processing unit (CPU) 5308, a memory 5309, a power supply circuit 5310, an audio processing circuit 5311, a transmission / reception circuit 5312, and the like. The printed wiring board 5302 and the display panel 5301 are connected by an FPC (Flexible Printed Circuit) 5313. The printed wiring board 5302 may be provided with a capacitor, a buffer circuit, or the like so that noise is added to the power supply voltage or the signal or the rise of the signal is not slowed. The controller 5307, the audio processing circuit 5311, the memory 5309, the CPU 5308, the power supply circuit 5310, and the like can be mounted on the display panel 5301 using a COG (Chip On Glass) method. The scale of the printed wiring board 5302 can be reduced by the COG method.

  Various control signals are input and output through an interface (I / F) unit 5314 provided in the printed wiring board 5302. An antenna port 5315 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 5302.

  FIG. 22B is a block diagram of the module shown in FIG. This module includes a VRAM 5316, a DRAM 5317, a flash memory 5318, and the like as the memory 5309. The VRAM 5316 stores image data to be displayed on the panel, the DRAM 5317 stores image data or audio data, and the flash memory stores various programs.

  The power supply circuit 5310 supplies power for operating the display panel 5301, the controller 5307, the CPU 5308, the sound processing circuit 5311, the memory 5309, and the transmission / reception circuit 5312. Depending on the specifications of the panel, the power supply circuit 5310 may be provided with a current source.

  The CPU 5308 includes a control signal generation circuit 5320, a decoder 5321, a register 5322, an arithmetic circuit 5323, a RAM 5324, an interface 5366 for the CPU 5308, and the like. Various signals input to the CPU 5308 through the interface 5366 are temporarily held in the register 5322 and then input to the arithmetic circuit 5323, the decoder 5321, and the like. The arithmetic circuit 5323 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 5321 is decoded and input to the control signal generation circuit 5320. The control signal generation circuit 5320 generates a signal including various instructions based on the input signal, and a location designated by the arithmetic circuit 5323, specifically, a memory 5309, a transmission / reception circuit 5312, an audio processing circuit 5311, a controller 5307, and the like. Send to.

  The memory 5309, the transmission / reception circuit 5312, the sound processing circuit 5311, and the controller 5307 operate according to the received commands. The operation will be briefly described below.

  A signal input from the input unit 5325 is sent to the CPU 5308 mounted on the printed wiring board 5302 via the I / F unit 5314. The control signal generation circuit 5320 converts the image data stored in the VRAM 5316 into a predetermined format according to a signal sent from the input unit 5325 such as a pointing device or a keyboard, and sends the image data to the controller 5307.

  The controller 5307 performs data processing on a signal including image data sent from the CPU 5308 in accordance with the specifications of the panel, and supplies the processed signal to the display panel 5301. Further, the controller 5307 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 5310 and various signals input from the CPU 5308. Generated and supplied to the display panel 5301.

  In the transmission / reception circuit 5312, signals transmitted / received as radio waves in the antenna 5328 are processed. Specifically, high-frequency signals such as an isolator, a band-pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 5312 is sent to the audio processing circuit 5311 in accordance with a command from the CPU 5308.

  A signal including audio information sent in accordance with a command from the CPU 5308 is demodulated into an audio signal by the audio processing circuit 5311 and sent to the speaker 5327. An audio signal sent from the microphone 5326 is modulated in the audio processing circuit 5311 and sent to the transmission / reception circuit 5312 in accordance with a command from the CPU 5308.

  A controller 5307, a CPU 5308, a power supply circuit 5310, an audio processing circuit 5311, a memory 5309, and the like can be mounted as a package of this embodiment mode.

  FIG. 23 illustrates one mode of a mobile phone including the module illustrated in FIG. The display panel 5301 is incorporated in a housing 5330 so as to be detachable. The shape and size of the housing 5330 can be changed as appropriate in accordance with the size of the display panel 5301. The housing 5330 to which the display panel 5301 is fixed is fitted to the printed board 5331 and assembled as a module.

  The display panel 5301 is connected to the printed board 5331 through the FPC 5313. A signal processing circuit 5335 including a speaker 5332, a microphone 5333, a transmission / reception circuit 5334, a CPU, a controller, and the like is formed over the printed circuit board 5331. Such a module is combined with the input means 5336, the battery 5337, and the antenna 5340 and stored in the housing 5339. The pixel portion of the display panel 5301 is arranged so that it can be seen from an opening window formed in the housing 5339.

  The mobile phone according to the present embodiment can be transformed into various modes depending on the function and application. For example, the above-described effects can be obtained even when a plurality of display panels are provided, or the housing is divided into a plurality of cases and is opened and closed by a hinge.

  By using the present invention for the mobile phone shown in FIG. 23, a highly reliable mobile phone can be manufactured.

  FIG. 24A illustrates a liquid crystal display or an EL display, which includes a housing 6001, a support base 6002, a display portion 6003, and the like. The structure of the liquid crystal module or the EL module illustrated in FIG. 19 and the structure of the display panel illustrated in FIG. 22A can be used for the display portion 6003.

  By using the present invention, a highly reliable display can be manufactured.

  FIG. 24B illustrates a computer which includes a main body 6101, a housing 6102, a display portion 6103, a keyboard 6104, an external connection port 6105, a pointing mouse 6106, and the like. The liquid crystal module or the EL module illustrated in FIG. 19 and the structure of the display panel illustrated in FIG. 22A can be used for the display portion 6103.

  By using the present invention, a highly reliable computer can be manufactured.

  FIG. 24C illustrates a portable computer, which includes a main body 6201, a display portion 6202, a switch 6203, operation keys 6204, an infrared port 6205, and the like. The structure of the liquid crystal module or the EL module illustrated in FIG. 19 and the display panel illustrated in FIG. 22A can be used for the display portion 6202.

  By using the present invention, a highly reliable computer can be manufactured.

  FIG. 24D illustrates a portable game machine including a housing 6301, a display portion 6302, speaker portions 6303, operation keys 6304, a recording medium insertion portion 6305, and the like. The liquid crystal module or the EL module illustrated in FIG. 19 and the structure of the display panel illustrated in FIG. 22A can be used for the display portion 6302.

  By using the present invention, a highly reliable game machine can be manufactured.

  FIG. 24E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 6401, a housing 6402, a display portion A6403, a display portion B6404, and a recording medium (DVD or the like). A reading unit 6405, operation keys 6406, a speaker unit 6407, and the like are included. The display portion A 6403 mainly displays image information, and the display portion B 6404 mainly displays character information. The liquid crystal module or the EL module illustrated in FIG. 19 and the structure of the display panel illustrated in FIG. 22A can be used for the display portion A 6403, the display portion B 6404, the control circuit portion, and the like. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  By using the present invention, a highly reliable image reproducing device can be manufactured.

  Display devices used in these electronic devices can use not only a glass substrate but also a heat-resistant plastic substrate depending on the size, strength, or purpose of use. As a result, the weight can be further reduced.

  Note that the example shown in the present embodiment is only an example, and is not limited to these applications.

  This embodiment mode can be implemented freely combining with any description in the above embodiment modes.

Cross section of TFT substrate with IC mounted Cross-sectional view of a TFT substrate with a layer that adjusts the substrate spacing on the driver Structural diagram of a TFT substrate in which a layer for adjusting the substrate spacing is arranged so as to surround the sealing region Structural diagram of a panel in which a TFT substrate on which an IC is mounted and a counter substrate are bonded together Cross-sectional view of a panel in which a counter substrate is placed on a TFT substrate with a difference in height Structure diagram with chip capacitors on the wiring Structural diagram of a TFT substrate with a layer that adjusts the substrate spacing arranged at the corner of the panel 10A and 10B illustrate a manufacturing process of a TFT. 10A and 10B illustrate a manufacturing process of a TFT. 10A and 10B illustrate a manufacturing process of a TFT. 8A and 8B illustrate a manufacturing process of a liquid crystal display device. 8A and 8B illustrate a manufacturing process of a liquid crystal display device. 8A and 8B illustrate a manufacturing process of a liquid crystal display device. 8A and 8B illustrate a manufacturing process of a liquid crystal display device. 8A and 8B illustrate a manufacturing process of an EL display device. 8A and 8B illustrate a manufacturing process of an EL display device. 8A and 8B illustrate a manufacturing process of an EL display device. 8A and 8B illustrate a manufacturing process of an EL display device. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied.

Explanation of symbols

1 Substrate 2 Pixel area 3 IC
4 Layer to adjust the substrate spacing (spacer layer)
5 Scanning line drive circuit 6 Counter substrate 7 Seal material 8 Gap 9 Chip capacitor 10 Wiring 11 Connection terminal

Claims (5)

A first substrate;
A second substrate provided to face the first substrate;
An IC and a spacer layer provided between the first substrate and the second substrate;
A transistor provided between the first substrate and the spacer layer ;
The spacer layer has a function of adjusting a distance between the first substrate and the second substrate;
The display device, wherein the IC and the spacer layer are provided to have the same height. A first substrate;
A second substrate provided to face the first substrate;
An IC and a spacer layer provided between the first substrate and the second substrate;
A transistor provided between the first substrate and the spacer layer ;
The spacer layer is provided at a corner of the first substrate, and has a function of adjusting a distance between the first substrate and the second substrate,
The display device, wherein the IC and the spacer layer are provided to have the same height. In claim 1 or claim 2,
The display device, wherein the spacer layer is a chip capacitor. In claim 3,
The display device, wherein the chip capacitor is provided on a wiring. In any one of Claims 1 thru | or 4,
The display device, wherein the IC and the spacer layer have upper surfaces in contact with the second substrate.

Images