JP5230145B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5230145B2
JP5230145B2 JP2007219312A JP2007219312A JP5230145B2 JP 5230145 B2 JP5230145 B2 JP 5230145B2 JP 2007219312 A JP2007219312 A JP 2007219312A JP 2007219312 A JP2007219312 A JP 2007219312A JP 5230145 B2 JP5230145 B2 JP 5230145B2
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Japan
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layer
mask
film
opening
substrate
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Expired - Fee Related
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JP2007219312A
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Japanese (ja)
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JP2008085313A5 (enExample
JP2008085313A (ja
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007219312A priority Critical patent/JP5230145B2/ja
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Publication of JP2008085313A5 publication Critical patent/JP2008085313A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007219312A 2006-08-29 2007-08-27 表示装置の作製方法 Expired - Fee Related JP5230145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007219312A JP5230145B2 (ja) 2006-08-29 2007-08-27 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006231956 2006-08-29
JP2006231956 2006-08-29
JP2007219312A JP5230145B2 (ja) 2006-08-29 2007-08-27 表示装置の作製方法

Publications (3)

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JP2008085313A JP2008085313A (ja) 2008-04-10
JP2008085313A5 JP2008085313A5 (enExample) 2010-09-24
JP5230145B2 true JP5230145B2 (ja) 2013-07-10

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JP2007219312A Expired - Fee Related JP5230145B2 (ja) 2006-08-29 2007-08-27 表示装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101670695B1 (ko) 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI574423B (zh) 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102656690B (zh) 2009-12-25 2016-04-20 株式会社半导体能源研究所 半导体装置
JP6396382B2 (ja) * 2011-02-16 2018-09-26 株式会社リコー ホール形成方法、並びに多層配線の製造方法、半導体装置の製造方法、表示素子の製造方法、画像表示装置の製造方法、及びシステムの製造方法
JP2012186455A (ja) * 2011-02-16 2012-09-27 Ricoh Co Ltd ホール形成方法、並びに該方法を用いてビアホールを形成した多層配線、半導体装置、表示素子、画像表示装置、及びシステム
JP6654466B2 (ja) * 2015-08-31 2020-02-26 株式会社Ｊｏｌｅｄ 半導体装置、表示装置、表示装置の製造方法および電子機器
CN113690289B (zh) * 2021-08-25 2024-05-14 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304162A (ja) * 2003-03-17 2004-10-28 Seiko Epson Corp コンタクトホール形成方法、薄膜半導体装置の製造方法、電子デバイスの製造方法、電子デバイス
JP4879541B2 (ja) * 2004-09-29 2012-02-22 株式会社半導体エネルギー研究所 表示装置の作製方法

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JP2008085313A (ja) 2008-04-10

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