JP5225880B2 - Development processing method - Google Patents

Description

  The present invention relates to a development processing method in which a resist is applied and development processing is performed on a substrate subjected to exposure processing. In particular, when a fine pattern is formed on a substrate such as a semiconductor wafer, development is performed on the substrate subjected to exposure processing. The present invention relates to a development processing method for performing processing.

  In the manufacturing process of a semiconductor device, after a predetermined film is formed on a wafer as a substrate to be processed, a resist solution is applied to form a resist film, and the resist film is exposed in accordance with a circuit pattern. A circuit pattern is formed by a so-called photolithography technique of developing. In this photolithography technology, a wafer as a substrate to be processed is subjected to a series of processes such as cleaning processing → dehydration baking → adhesion (hydrophobization) processing → resist application → prebaking → exposure → development → postbaking. A predetermined fine pattern is formed on the film.

  As a conventional development processing method, for example, a wafer is rotated around a vertical axis, and a belt-like developer extending in the rotational radius direction is supplied from a nozzle discharge port, and the developer nozzle is moved from the outside of the wafer toward the center. A paddleless method (rotary development method) in which a developer is spirally applied to the wafer surface by moving is adopted. According to this paddleless system, the dissolved components of the resist are removed together with the developer during development by the rotation (centrifugal force) of the wafer. Thereafter, a rinse liquid such as pure water is supplied from the rinse liquid nozzle to the center of the wafer. As a result, the resist in a portion insoluble in the developer remains, and a predetermined resist pattern is obtained (see, for example, Patent Document 1).

  In addition, in order to reduce the developer consumption and shorten the development processing time, the developing solution is intermittently supplied to the center of the substrate whose rotation is controlled, and the developing process is performed. A large amount of developer is vigorously supplied to the substrate, so that the resist-dissolved components on the substrate are efficiently washed away, the development process is accelerated, and the development time is shortened (eg , See Patent Document 2).

  On the other hand, with the high integration of semiconductor devices, wirings and separation widths required for manufacturing processes have been miniaturized. In order to form such a fine pattern, a photolithography technique is used as in the conventional case, but the recent miniaturization of semiconductor devices has come to require the resolution limit of the photolithography technique or less. . In particular, the resolution limit of the current mainstream ArF immersion exposure technology is said to reach the limit in the 4xnm generation, so in the finer 3xnm generation, the miniaturization technology called Double Patterning (DP) The double patterning technology is currently being actively developed.

  As a technique that is indispensable for the double patterning technology and forms a fine pattern with a critical dimension (CD) below the resolution limit, for example, there is a slimming process. In a manufacturing process including a slimming process, for example, an exposure region is soluble in a developer in order to improve LWR (Line Width Roughness) and CDU (Critical Dimension Uniformity) of a fine pattern to be formed. Despite the expected area, dissolution does not progress completely. Although the non-exposed area should be insoluble, a few soluble groups are generated and partially dissolved in the developer. It is necessary to completely dissolve such a region having an intermediate property between the soluble region and the insoluble region, so-called intermediate exposure region, in the developer.

  However, in order to completely develop the intermediate exposure area, the intermediate exposure area has a low dissolution rate, and therefore, it is necessary to perform development processing for a long time. It cannot be developed completely. Therefore, at present, after a normal temperature developing solution is supplied onto the substrate and a normal developing process is performed, the developing process is performed by supplying a high temperature developer of about 50 ° C. over the substrate for a long time. .

Japanese Patent Laid-Open No. 2005-210059 JP 2007-318087 A

  However, when the exposed fine pattern is developed in the photolithography for forming a fine pattern using the above development processing method, there are the following problems.

  In the case of a development processing method in which development is performed by supplying a normal temperature developing solution on a substrate and performing a normal developing treatment, and then supplying a high temperature developing solution of about 50 ° C. on the substrate for a long time. The treatment process must be performed in two steps. When the number of development processing steps increases, there is a problem that the development time becomes longer.

  In addition, when performing a normal temperature development process and a high temperature development process, there is a problem that the number of the development process steps increases and the amount of developer consumption increases as the development time increases.

  Further, as the number of development processing steps increases and the development time becomes longer, there is a problem that the processing time per wafer increases and the throughput in the development processing step decreases.

  Further, in order to form a fine pattern even when intermittent supply of a developer as disclosed in Patent Document 2 is applied to a method of supplying a developer at a high temperature of about 50 ° C. for a long time on the above substrate. In the case where the substrate to be processed is exposed and developed, the effect of supplying a large amount of developer vigorously to the center of the substrate when the developer is discharged again after intermittently stopping the supply of the developer. Cannot be obtained and the exposed area cannot be completely dissolved and removed.

  The present invention has been made in view of the above points, and can reduce the number of steps of the development processing step, reduce the consumption of the developer, and improve the throughput of the development processing step. An object of the present invention is to provide a developing method that can be used.

  In order to solve the above-described problems, the present invention is characterized by the following measures.

According to a first aspect of the present invention, there is provided a development processing method in which a resist is coated on the surface and the exposed substrate is held horizontally and developed while rotating about a vertical axis. From the discharge port of the developer nozzle disposed above, the developer is supplied to the surface of the substrate while being moved between a position above the central portion of the substrate and a position above the peripheral edge of the substrate. A developer supplying step, and then rotating the substrate, from a discharge port of a pure water nozzle disposed above the substrate, to a surface of the substrate, a position above a central portion of the substrate, and the substrate And a pure water supply step for supplying pure water while moving between a position above the peripheral edge of the liquid and the developer supply step and the pure water supply step are repeated a plurality of times. .

  A second invention is characterized in that, in the development processing method according to the first invention, the developer supplying step is started immediately after the pure water supplying step.

  A third invention is characterized in that, in the development processing method according to the first or second invention, in the developer supply step, a developer having a temperature higher than room temperature is supplied.

  According to a fourth invention, in the development processing method according to any one of the first to third inventions, in the second and subsequent developer supply steps, a rotation speed for rotating the substrate in the first developer supply step; The substrate is rotated at an equal rotation speed, and the time equal to the time for supplying the developer in the first developer supply step at a flow rate equal to the flow rate for supplying the developer in the first developer supply step. During this period, the developer is supplied.

  According to the present invention, the number of development processing steps can be reduced, the consumption of the developer can be reduced, and the throughput of the development processing step can be improved.

1 is a perspective view showing an overall configuration of a coating / developing apparatus including a developing device used for performing a developing method according to an embodiment of the present invention. It is a top view which shows the whole structure of the coating and developing apparatus provided with the developing device used in order to perform the development processing method concerning embodiment of this invention. It is sectional drawing which shows typically the structure of the developing unit DEV of the developing device used in order to perform the developing method concerning embodiment of this invention. It is a top view which shows typically the structure of the developing unit DEV of the developing device used in order to perform the developing processing method concerning embodiment of this invention. It is a figure for demonstrating the development processing method which concerns on embodiment of this invention, and is a figure which shows the example of the processing recipe which the developing unit DEV implements. It is a figure which shows typically the state in which a developing solution or a pure water is supplied on a wafer in a developing solution supply step or a pure water rinse step. It is sectional drawing which shows typically a mode that a fine pattern is formed when developing using the conventional developing method. It is sectional drawing which shows typically a mode that a fine pattern is formed, when developing using the developing method which concerns on embodiment of this invention. It is the photograph which observed the fine pattern after the developing solution discharge (the state with a dissolved product between fine patterns) and the rinse after SEM. It is a figure for demonstrating the development processing method which concerns on the modification of embodiment of this invention, and is a figure which shows the example of the processing recipe which developing unit DEV implements. It is a graph which compares and compares the CD value of the fine pattern which developed with the development processing method of an Example with the CD value of the fine pattern which developed with the development processing method of a comparative example. It is a graph which shows the value which normalized LWR obtained by the comparative example and the Example with LWR of a comparative example.

Next, a mode for carrying out the present invention will be described with reference to the drawings.
(Embodiment)
First, a development processing method according to an embodiment of the present invention will be described.

  The development processing method according to the present embodiment is a development processing method in which a resist is coated on the surface and the exposed substrate is held horizontally and developed while rotating about the vertical axis. A developer supplying step for supplying the developer to the surface of the substrate from the outlet of the developer nozzle disposed above the substrate; and a discharge port of the pure water nozzle disposed above the substrate by rotating the substrate And a pure water supply step for supplying pure water to the surface of the substrate, and the developer supply step and the pure water supply step are alternately repeated.

  The development processing method according to the present embodiment is a particularly effective method when forming a fine pattern. Therefore, in the development processing method according to the present embodiment, in order to form a fine pattern made of a resist, the resist is applied to the surface and the exposed substrate is held horizontally and rotated around the vertical axis. In the development processing method, the substrate is rotated, the developer is supplied to the surface of the substrate from the outlet of the developer nozzle disposed above the substrate, and the exposed exposed area of the resist is dissolved. A developer supplying step, rotating the substrate, supplying pure water to the surface of the substrate from a discharge port of a pure water nozzle disposed above the substrate, and exposing the resist-dissolved exposure area from the surface of the substrate A deionized water supply step for removing, and a developer supply step and a deionized water supply step are alternately repeated to remove the exposed area of the resist to form a fine pattern. To.

  That is, the development processing method according to the present embodiment is characterized in that the developer supply step and the pure water supply step are repeated several times, such as developer → pure water rinse → developer → pure water rinse. .

  The temperature of the developer supplied in the developer supply step may be room temperature or high temperature. Further, for example, a normal temperature developer is supplied in the first several developer supply steps, and a high temperature developer is supplied in the subsequent several developer supply steps. These developer supply steps may be combined.

  Further, by repeating the developer supply step and the pure water supply step several times, the pure water rinse is periodically performed in the development processing step. By this regular pure water rinse, the resist dissolved in the developer or the resist dissolved product formed by dissolving the resist in the developer can be efficiently produced between or around the fine pattern, that is, in the exposed exposure area of the resist. Can be removed. As a result, dissolution of the exposed exposed area of the resist in the developer can be promoted, and development can be performed in a short time.

  Next, a specific example of the development processing method according to the present embodiment will be described. As a specific example of the development processing method according to the present embodiment, a developing device used for performing the development processing method according to the present embodiment will be described with reference to FIGS. 1 and 2.

  FIG. 1 is a perspective view showing an overall configuration of a coating / developing apparatus including a developing apparatus used for performing the developing processing method according to the present embodiment, and FIG. 2 is a plan view thereof.

  As shown in FIGS. 1 and 2, the coating / developing apparatus 100 includes a carrier mounting part B1, a processing part B2, an interface part B3, and the like, and is provided adjacent to an exposure part B4 of an external device.

  The carrier mounting portion B1 is for carrying in and out a carrier C1 in which, for example, 13 wafers W serving as substrates are hermetically stored. The carrier placement section B1 includes a carrier station 90 including a placement section 90a on which a plurality of carriers C1 can be placed, an opening / closing section 91 provided on a wall surface in front of the carrier station 90, and an opening / closing section 91. And delivery means A1 for taking out the wafer W from the carrier C1.

  The processing unit B2 is surrounded by a casing 92 and is connected to the back side of the carrier placement unit B1. The processing unit B2 sequentially transfers the wafers W between the processing units including shelf units U1, U2, U3 in which heating / cooling system units are multi-staged, and coating / developing units described later, alternately from the front side. Main transport means A2 and A3. The shelf units U1, U2, and U3 and the main transfer means A2 and A3 are arranged in a line in the front-rear direction as viewed from the carrier mounting part B1, and an opening for wafer transfer (not shown) is formed at each connection site. The wafer W can freely move in the processing section B2 from the shelf unit U1 on one end side to the shelf unit U3 on the other end side.

  The main transport means A2 and A3 include one surface portion on the shelf units U1, U2 and U3 side arranged in the front-rear direction when viewed from the carrier placement portion B1, and one surface portion on the right side liquid processing units U4 and U5 side which will be described later. And a space surrounded by a partition wall 93 constituted by a rear surface portion forming one surface on the left side.

  The temperature / humidity adjusting units 94 and 95 are provided with a processing liquid temperature adjusting device and a temperature / humidity adjusting duct used in each unit.

  For example, as shown in FIG. 1, the liquid processing units U4 and U5 are arranged on a storage unit 96 that forms a space for supplying a chemical solution such as a coating solution (resist solution) or a developing solution. The developing unit DEV as the developing device for performing the developing method, the antireflection film forming unit BARC, and the like are stacked in a plurality of stages, for example, five stages. Moreover, the above-described shelf units U1, U2, and U3 have a configuration in which various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. The shelf units U1, U2, and U3 include a heating unit that heats (bakes) the wafer W, a cooling unit that cools the wafer W, and the like.

  The exposure unit B4 is connected to the processing unit B2 via an interface unit B3 including, for example, a first transfer chamber 97 and a second transfer chamber 98. Inside the interface unit B3, as shown in FIG. 2, in addition to two transfer means A4 and A5 for transferring the wafer W between the processing unit B2 and the exposure unit B4, a shelf unit U6 and a buffer carrier C0 is provided.

  An example of the flow of the wafer W in this apparatus will be described. First, the carrier C1 in which the wafer W is accommodated from the outside is placed on the placement portion 90a, and the lid of the carrier C1 is removed together with the opening / closing portion 91, and the delivery means A1. Thus, the wafer W is taken out. Then, the wafer W is delivered to the main transfer means A2 via a delivery unit (not shown) that forms one stage of the shelf unit U1, and is pre-processed as a coating process on one shelf in the shelf units U1 to U3. For example, adhesion (hydrophobization treatment) and cooling treatment are performed, and then a resist solution is applied by the application unit COT.

  Subsequently, the wafer W is heated (baked) by a heating unit that forms one shelf of the shelf units U1 to U3, further cooled, and then transferred to the interface unit B3 via the delivery unit of the shelf unit U3. The In this interface unit B3, the wafer W is transferred to the exposure unit B4 through a path of transfer means A4 → shelf unit U6 → transfer means A5, for example, and exposure is performed. After the exposure, the wafer W is transferred to the main transfer means A3 through the reverse path, and developed by the developing unit DEV, thereby forming a resist mask. Thereafter, the wafer W is returned to the original carrier C1 on the mounting portion 90a.

  Next, the developing unit DEV of the developing device used for performing the developing processing method according to the present embodiment will be described. FIG. 3 is a sectional view schematically showing the configuration of the developing unit DEV, and FIG. 4 is a plan view thereof.

  The development unit DEV includes a spin chuck 2, a cup body 3, a developer nozzle 4 a, a rinse liquid nozzle 4 b, and a control unit 7. The rinse liquid nozzle corresponds to the pure water nozzle in the present invention.

  The spin chuck 2 is a substrate holding unit for sucking and adsorbing the central portion of the back side of the substrate, for example, the wafer W and holding it in a horizontal posture. As shown in FIG. 3, the spin chuck 2 is connected to a drive mechanism 22 that is a rotation drive mechanism via a rotation shaft 21, and is configured to be able to rotate and move up and down while holding the wafer W. . In the example shown in FIG. 3, the center of the wafer W is set on the rotation axis of the spin chuck 2. However, in the present embodiment, the center of the wafer W may not be located on the rotation axis, and for example, the center of the wafer W only needs to be located in an area within a radius of 1 to 15 mm from the rotation axis.

  The cup body 3 is provided to open upward so as to surround the wafer W on the spin chuck 2. The cup body 3 is composed of a rectangular outer cup 31 on the upper side, a cylindrical outer cup 31 on the lower side, and a cylindrical inner cup 32 whose upper side is inclined inward, and is connected to the lower end of the outer cup 31. The outer cup 31 is moved up and down by 33, and the inner cup 32 is further pushed up and down by a step portion 31a formed on the inner peripheral surface of the lower end side of the outer cup 31.

  As shown in FIG. 3, a circular plate 34 is provided below the spin chuck 2, and a liquid receiving portion 35 having a concave cross section is formed around the entire circumference of the circular plate 34. Is provided.

  A drain discharge port 36 is formed on the bottom surface of the liquid receiving portion 35, and the developer and the rinse liquid stored in the liquid receiving portion 35 after spilling from the wafer W or being shaken off are stored via the drain discharge port 36. Discharged outside the device.

  Further, a ring member 37 having a mountain-shaped cross section is provided outside the circular plate 34. Although not shown, elevating pins that are, for example, three substrate support pins penetrating the circular plate 34 are provided, and the wafer W is attached to the spin chuck 2 by the cooperative action of the elevating pins and a substrate transfer means (not shown). It is configured to be delivered to.

  The developer nozzle 4 a has a discharge port (not shown), and is provided so as to be movable up and down and horizontally so as to face the surface of the wafer W held by the spin chuck 2. The developer nozzle 4a is configured to be supplied with a developer at a predetermined flow rate (for example, 600 ml / min) from a developer supply unit (not shown) included in the chemical solution supply unit 6 shown in FIG. Further, the chemical solution supply unit 6 includes a temperature adjustment mechanism (not shown), and adjusts the developer to a predetermined temperature (for example, 23 ° C.) and supplies it to the nozzle. That is, the developer is always supplied at the processing temperature, so that a uniform development process can be performed on a wafer group coated with the same type of resist.

The rinse liquid nozzle 4b has a discharge port (not shown) and is provided independently of the developer nozzle 4a as shown in FIG. The rinsing liquid nozzle 4b is for discharging a rinsing liquid for washing away the developer on the wafer surface, such as pure water, and corresponds to the pure water nozzle in the present invention. In the present embodiment, an example in which the developer nozzle 4a and the rinse liquid nozzle 4b are configured independently will be described, but the developer nozzle 4a and the rinse liquid nozzle 4b may be configured integrally. . In addition to the developer nozzle 4a and the rinsing liquid nozzle 4b, a N ₂ nozzle for spraying the N ₂ gas onto the wafer surface as appropriate, and a small amount for a process for improving the wettability of the wafer surface (pre-wet process). A surface treatment liquid nozzle for discharging a rinsing liquid such as pure water and a surfactant nozzle for supplying a surfactant to the wafer surface may be provided separately.

  As shown in FIG. 4, the developer nozzle 4 a is supported on one end side of a nozzle arm 5 a that is a support member, and the other end side of the nozzle arm 5 a is connected to a moving base 51 a having a lifting mechanism (not shown). . Further, the movable base 51a is configured to be movable in the lateral direction along the guide member 52 extending in the X direction on the bottom surface of the exterior body of the unit, for example. By this moving mechanism, the developer nozzle 4a is movable on a straight line from the outside of the wafer W toward the center. A standby portion 53 for the developer nozzle 4 a is provided outside the cup body 3, and the tip portion of the developer nozzle 4 a is cleaned by the nozzle standby portion 53.

  Similarly to the developer nozzle 4a, the rinsing liquid nozzle 4b is also supported on one end side of a nozzle arm 5b that is a support member, and the other end side of the nozzle arm 5b is connected to a moving base 51b having a lifting mechanism (not shown). It is configured to be movable in the lateral direction along the guide member 52, and is movable on a straight line from the outside of the wafer W toward the center.

  The control unit 7 includes a computer and controls operations of the chemical solution supply unit (developing solution supply unit) 6, the drive mechanism 22, the elevating unit 33, and the moving bases 51 a and 51 b. The controller 7 functions to control the discharge of the developer and rinse liquid supplied to the wafer W. In the present embodiment, when the developer nozzle 4a moves between the center and the outside of the wafer W, control is performed so that the developer is supplied from the developer nozzle 4a.

  A storage unit (not shown) included in the control unit 7 includes one or a plurality of processing recipes made of software in which the movement operation, the discharge operation, the rotation operation of the wafer W, and the like of the developer nozzle 4a and the rinse liquid nozzle 4b are determined in advance. A development processing program having a command portion in which instructions are set so that each operation is performed based on any of the processing recipes is stored. The control unit 7 reads the development processing program stored in the storage unit and performs control so that the development processing step is performed. The development processing program is stored in the storage unit of the control unit 7 while being recorded and stored in a recording medium such as a hard disk, a compact disk, a magneto-optical disk, or a memory card.

  Next, the development processing method according to the present embodiment will be described with reference to FIGS. 5 and 6 while illustrating the development processing steps of the wafer W by the development unit DEV. FIG. 5 is a diagram for explaining the development processing method according to the present embodiment, and is a diagram illustrating an example of a processing recipe performed by the development unit DEV. FIG. 6 is a diagram schematically showing a state where the developer or pure water is supplied onto the wafer W in the developer supply step or pure water supply step. The developer supply step corresponds to step S7 in FIG. 5, and the pure water supply step corresponds to step S8 in FIG.

  In the development processing step for performing the development processing method according to the present embodiment, the processing recipe is determined according to various conditions such as the type of resist used and the type of resist pattern to be formed (line system, hole system). However, in the following description, it is assumed that development processing is performed based on the processing recipe shown in FIG. Moreover, the process recipe shown in FIG. 5 has each step from step S1 to step S13.

  Here, for example, it is assumed that the pattern formed on the wafer W is a line pattern, and the resist is, for example, ArF resist AIM5796 (trade name: manufactured by JSR). Further, for example, NMD3 (trade name: manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used as the developer. Further, for example, the temperature of the developing solution is set to 23 ° C., the supply flow rate of the developing solution from the developing solution nozzle 4a is 600 ml / min, and the supply flow rate of pure water as the rinsing solution from the rinsing solution nozzle 4b is 1000 ml / min. It is assumed that it is set.

  Before starting Step S1, in the state where the outer cup 31 and the inner cup 32 are in the lowered position and the developer nozzle 4a is disposed above the nozzle standby portion 53, the surface is coated with resist and further exposed. The subsequent wafer W is loaded by a substrate transfer means (not shown). Then, the wafer W is transferred to the spin chuck 2 by the cooperative action of the substrate transfer means and a lift pin (not shown).

  Next, the outer cup 31 and the inner cup 32 are set to the raised position, and are positions where the supply of the developer starts, for example, above the outside of the wafer W and slightly higher from the surface of the wafer W. The developer nozzle 4a is disposed at (starting position).

  Next, step S1 is performed. In step S1, the wafer W is rotated around the vertical axis at a rotational speed of, for example, 1500 rpm, the developing solution nozzle 4a is moved above the periphery of the wafer W, and the rinsing solution nozzle 4b is moved above the center of the wafer W. .

  Next, step S2 and step S3 are performed. In step S2, a small amount of rinse liquid, for example, pure water is supplied from the rinse liquid nozzle 4b to the central portion of the wafer W. Subsequently, in step S3, a small amount of developer is supplied from the developer nozzle 4a to the central portion of the wafer W. . As a result, a pre-wetting process on the entire surface of the wafer W, that is, a process for improving the wettability of the wafer surface, is performed, and the developer supplied thereafter is quickly spread over the surface of the wafer W.

  Next, steps S4 to S6 are performed. In step S4, the developer nozzle 4a is moved to the start position above the outside of the wafer W, and in step S5, the developer nozzle 4a moved to the start position is moved for a predetermined time (0.1 seconds in FIG. 5). ), The developer nozzle 4a is moved from the start position above the outside of the wafer W to the center for a predetermined time (FIG. 5) while supplying the developer. In 2 seconds).

  Next, step S7 and step S8 are alternately repeated six times as described in the step repetition content column of FIG.

  Step S7 is a step of supplying the developer from the developer nozzle 4a to the central portion of the wafer W for a predetermined time (10 seconds in FIG. 5). FIG. 6A schematically shows a state in which the developer is supplied onto the wafer W in step S7. In step S7, the developer D supplied from the developer nozzle 4a to the central portion of the wafer W is moved along the surface of the wafer W by the action of the centrifugal force of the wafer W as shown in FIG. As a result, a thin liquid film is formed on the surface of the wafer W. Further, the exposed region of the resist that can be dissolved in the developer by the exposure process in advance reacts with the developer D to become a dissolved product.

  Step S8 is performed after step S7. In step S8, the nozzle to be discharged is switched from the developing solution nozzle 4a to the rinsing liquid nozzle 4b, and the rinsing liquid R made of pure water is supplied from the rinsing liquid nozzle 4b to the center of the wafer W for a predetermined time (3 seconds in FIG. 5). It is the process of supplying to a part. FIG. 6B schematically shows a state in which pure water is supplied onto the wafer W in step S8. In step S8, the rinsing liquid R supplied to the central portion of the wafer W from the rinsing liquid nozzle 4b is moved along the surface of the wafer W by the action of the centrifugal force of the wafer W as shown in FIG. A thin liquid film made of the developer D formed on the surface of the wafer W in step S7 is washed away from the surface of the wafer W. Further, the rinsing liquid R ishes away from the surface of the wafer W together with the liquid film, the dissolved product generated by the reaction of the exposed area of the resist with the developer D.

  Step S7 is performed again after step S8. Further, Step S7 is performed, and the developer is supplied from the developer nozzle 4a to the central portion of the wafer W for a predetermined time (10 seconds in FIG. 5), and then Step S8 is performed again. In this way, by repeatedly performing step S7 and step S8 a plurality of times (six times in FIG. 5), the substrate surface development process and the developer rinsing process are repeated, and the substrate surface development process is performed. Is advanced.

  Note that the rotation speed of the wafer W in step S7 and step S8 is set to, for example, 1000 rpm as shown in FIG. Further, the flow rate of supplying the developer D in step S7 is set to 600 ml / min, for example. Moreover, the flow volume which supplies the rinse liquid R in step S8 is set, for example to 1000 ml / min.

  In the processing recipe illustrated in FIG. 5, when step S7, which is a developer supply step, and step S8, which is a pure water supply step, are repeated, step S7 is started immediately after step S8.

  Further, in the processing recipe illustrated in FIG. 5, since steps S7 and S8 are alternately repeated, in the second and subsequent developer supply steps, the rotation is equal to the rotation speed for rotating the substrate in the first developer supply step. The substrate is rotated at a speed, and the developer is supplied at a flow rate equal to the flow rate of supplying the developer in the first developer supply step for a time equal to the time for supplying the developer in the first developer supply step. To do.

  Further, in the processing recipe illustrated in FIG. 5, since steps S7 and S8 are alternately repeated, in the second and subsequent pure water supply steps, the rotation is equal to the rotation speed for rotating the substrate in the first pure water supply step. The substrate is rotated at a speed, and pure water is supplied at a flow rate equal to the flow rate for supplying pure water in the first pure water supply step for a time equal to the time for supplying pure water in the first pure water supply step. To do.

  After step S7 and step S8 are alternately repeated a plurality of times, steps S9 to S11 are performed. In step S9, a rinsing liquid such as pure water is supplied from the rinsing liquid nozzle 4b to the central portion of the wafer W at a wafer rotation speed of 500 rpm for 2 seconds, and in step S10, the wafer W is supplied to the central portion of the wafer W at a wafer rotation speed of 1200 rpm for 3 seconds. In step S11, the wafer is supplied to the center of the wafer W at a wafer rotation speed of 500 rpm for 10 seconds.

  The rinsing liquid supplied to the surface of the wafer W by the series of rinsing liquid supply processing in steps S9 to S11 spreads outward along the surface by the action of the centrifugal force of the rotating wafer W, and the exposure area on the wafer W The developer containing the dissolved product formed by dissolving the resist in the developer is washed away, and a predetermined resist pattern is formed.

  Next, step S12 is performed. In step S12, the wafer W is rotated at a high speed of, for example, 2000 rpm, and spin drying is performed to shake off the liquid on the wafer surface.

  Although not included in the steps in the present embodiment, a step of supplying a surfactant to the surface of the wafer W using a surfactant nozzle may be executed before the series of spin drying processes. By supplying the surfactant before spin drying, the liquid adhering to the surface of the pattern (especially the valley of the pattern) at the time of spin drying can be quickly shaken off with a small friction. For this reason, it is possible to prevent a problem that the pattern falls due to being pulled by the liquid shaken off during spin drying.

  And step S13 is performed after step S12 which is a spin-drying process. In step S <b> 13, the rotation of the wafer W is stopped, the outer cup 31 and the inner cup 32 are lowered, the developer nozzle 4 a is moved above the nozzle standby unit 53, and a series of development processes is completed.

  Next, referring to FIG. 7 and FIG. 8, by performing the development processing method according to the present embodiment, the number of development processing steps can be reduced and the consumption of the developer can be reduced. The effect that can improve the throughput of the process will be described.

  FIG. 7 is a cross-sectional view schematically showing how a fine pattern is formed when development processing is performed using a conventional development processing method. FIG. 8 is a cross-sectional view schematically showing how a fine pattern is formed when performing development processing using the development processing method according to the present embodiment.

  First, a case where development processing is performed using a conventional development processing method will be described.

  FIG. 7A schematically shows a cross-sectional structure of the resist 111 after the exposure. In FIG. 7A, in the exposed region 112 which is a region selectively exposed using a mask or the like, a change occurs in the molecular structure of the resist made of the polymer compound, and the resist is dissolved in the developer D. On the other hand, in the non-exposed region 113, which is an unexposed region, no change occurs in the molecular structure of the resist made of the polymer compound, so that it does not dissolve in the developer D.

  FIG. 7B schematically shows a state in which the developing solution D is supplied to the surface of the wafer and the resist in the exposure region 112 that can be dissolved in the developing solution D is dissolved. That is, FIG. 7B schematically shows the cross-sectional structure of the resist when performing step S7 of FIG. 5 described above. When the resist is developed, the exposed area 112 is dissolved in the developer D to generate a dissolved product 114. In the case of an ArF resist or the like used for a fine pattern, the exposed region 112 is highly reactive with the developer and generates a dissolved product 114. Next, the intermediate exposure region 115 which is low in reactivity with the developer in nature is dissolved.

  However, according to the conventional development processing method, the dissolved product 114 present around the intermediate exposure region 115 prevents dissolution, and the intermediate exposure region 115 gradually dissolves. In particular, when the exposed pattern is a fine pattern, the developer containing the dissolved product of the resist is not easily washed away from the substrate surface having fine irregularities due to the fine pattern due to the surface tension of the developer itself. . In addition, when the exposed pattern is a fine pattern, it is difficult for the developer to enter the back of the fine pattern having a concave shape partially dissolved due to the surface tension of the developer or the viscosity of the developer. In some cases. When the developer containing the dissolved product formed by dissolving the resist is difficult to be washed off from the surface of the resist on which the pattern is being formed, when forming a fine pattern having a line and space of about 100 nm or less, This is a particularly remarkable phenomenon.

  Therefore, in the conventional development processing method, as shown in FIG. 7C, the intermediate exposure region 115 cannot be advanced only by performing the normal time development processing. In order to completely dissolve the intermediate exposure region 115 and form a fine pattern, it is necessary to perform development processing for a long time, and the consumption of the developer increases with the development processing for a long time.

  On the other hand, according to the development processing method according to the present embodiment, a step of supplying a developer to the wafer surface, dissolving the resist in the exposed area, which is an exposed area, in the developer, and generating a dissolved product; The step of rinsing and removing the developer containing the product with a rinse solution such as pure water is repeated alternately.

  FIG. 8A schematically shows a cross-sectional structure of the resist 111 after the exposure. In FIG. 8A, in the exposed region 112 which is a region selectively exposed using a mask or the like, a change occurs in the molecular structure of the resist made of the polymer compound, and the resist is dissolved in the developer D. On the other hand, in the non-exposed region 113, which is an unexposed region, no change occurs in the molecular structure of the resist made of the polymer compound, so that it does not dissolve in the developer D.

  FIG. 8A schematically shows the cross-sectional structure of the resist 111 after the exposure, as in FIG. 7A. In FIG. 8A, in the exposed region 112 which is a region selectively exposed using a mask or the like, a change occurs in the molecular structure of the resist made of the polymer compound, and the resist is dissolved in the developer D. On the other hand, in the non-exposed region 113, which is an unexposed region, no change occurs in the molecular structure of the resist made of the polymer compound, so that it does not dissolve in the developer D. Further, in FIG. 8B, when performing step S7 of FIG. 5 described above, the exposure region 112 is dissolved in the developer D to generate a dissolved product 114, as in FIG. 7B. is there. Also in FIG. 8B, the dissolved product 114 prevents the intermediate exposure region 115 from dissolving in the developer D.

  However, according to the development processing method according to the present embodiment, as shown in FIG. 8C, the rinsing process of step S8 in FIG. 5 is performed in the middle of the development process. As a result, the dissolved product 114 generated by the exposure region 112 being dissolved in the developer D is washed away from the surface of the resist 111 on which a fine pattern is being formed and removed. Further, since the rinsing solution R is supplied and the developing solution D on the fine pattern is diluted, the viscosity of the developing solution dissolving the resist is reduced and the fluidity is increased, so that the dissolved product from the resist surface. 114 can be washed away. That is, by efficiently removing the dissolved product 114 that has a function of preventing dissolution of the exposed region 112 during the development processing step, dissolution of the exposed region 112 in the developer D is promoted.

  Here, how the dissolved product 114 is washed from the surface of the resist and removed by performing a rinsing process in the middle of the development processing step will be described using an example of a photograph observed with a scanning electron microscope (SEM). To do. FIG. 9 shows an example of a photograph in which a fine pattern after rinsing is observed with an SEM during discharge of a developer (with a dissolved product between fine patterns). FIG. 9A corresponds to a fine pattern after rinsing, and FIG. 9B corresponds to a fine pattern during the discharge of the developer (a state in which a dissolved product is present between the fine patterns). FIG. 9A corresponds to a case where the development time is 60 seconds in an example described later.

  In the case of a fine pattern obtained by performing a rinsing process in the middle of the development process, that is, in the case of a fine pattern after rinsing, as shown in FIG. All parts have been removed. As a result, a desired fine pattern is formed.

  On the other hand, when the rinse treatment is not performed in the middle of the development processing step and the sample is dried by shaking, that is, in the case of the fine pattern during the discharge of the developer (the state where the dissolved product is present between the fine patterns), as shown in FIG. In addition, the resist in the exposed area, that is, the dissolved product is removed only in a part and not in other parts. As a result, a desired fine pattern is not formed. Therefore, the dissolved product produced by the development process in which the resist in the exposed area is dissolved in the developer can be removed by rinsing.

  Thereafter, as shown in FIG. 8D, by performing Step S7 again, the intermediate exposure region 115 can be brought into direct contact with the developer. As a result, the intermediate exposure region 115 can be developed at a faster speed than in the case of the conventional development processing method. Thereafter, as shown in FIG. 8E, the dissolved product 114 newly generated by dissolving in the developer D can be removed from the resist 111 by performing Step S8 again.

  Further, as shown in FIGS. 8 (f) and 8 (g), steps S 7 and S 8 are repeated, and the dissolved product 114 is periodically removed by rinsing, so that the intermediate exposure region 115 becomes the developer D. The reaction of forming the dissolved product 114 by being dissolved in the substrate is promoted, and the resist in the intermediate exposure region 115 can be completely removed. Accordingly, the CD value of the fine pattern to be formed can be reduced to a desired CD value in a short time.

  Further, in the development processing method according to the present embodiment, when step S7 and step S8 are repeated, step S7 is started immediately after step S8. By starting Step S7 immediately after Step S8, the surface of the wafer W from which the dissolved product has been removed is not dried, and even if the dissolved product remains without being removed, It does not interfere with dissolution of the underlying exposed area.

  As described above, according to the development processing method according to the present embodiment, the exposure region is formed by reacting with the developer and efficiently removing the dissolved product that has a function of hindering dissolution of the exposure region. Can be dissolved. Accordingly, the number of development processing steps can be reduced, the consumption of the developer can be reduced, and the throughput of the development processing step can be improved.

  In the development processing method according to the present embodiment, in the second and subsequent developer supply steps, the substrate is rotated at a rotation speed different from the rotation speed for rotating the substrate in the first developer supply step, or 1 The developer may be supplied at a flow rate different from the flow rate of supplying the developer in the first developer supply step, or for a time different from the time of supplying the developer in the first developer supply step.

  Further, in the development processing method according to the present embodiment, in the second and subsequent pure water supply steps, the substrate is rotated at a rotation speed different from the rotation speed for rotating the substrate in the first pure water supply step, or 1 Pure water may be supplied at a flow rate different from the flow rate for supplying pure water in the first pure water supply step, or for a time different from the time for supplying pure water in the first pure water supply step.

  Further, in the development processing method according to the present embodiment, when the developer supply step and the pure water supply step are repeated, the developer supply step that is step S7 in FIG. 5 is replaced with the pure water supply in step S8 in FIG. Although it starts immediately after the step, the next developer supplying step may be started before the rinse liquid made of pure water on the surface of the wafer is dried, and the developer supplying step which is step S7 in FIG. It is not necessary to start immediately after the pure water supply step of step S8.

In the development processing method according to the present embodiment, in the developer supply step, for example, while moving the developer nozzle between a position above the center of the wafer and a position above the peripheral edge of the wafer, A developer may be supplied. Further, in that case, in the second and subsequent developer supply steps, the developer supply nozzle may be moved at a movement speed equal to the movement speed of moving the developer nozzle in the first developer supply step.
(Modification of the embodiment)
Next, a development processing method according to a modification of the embodiment of the present invention will be described with reference to FIG.

  FIG. 10 is a diagram for explaining the development processing method according to the present modification, and is a diagram illustrating an example of a processing recipe performed by the development unit DEV. The developer supply step corresponds to steps S7A and S7B in FIG. 10, and the pure water supply step corresponds to steps S8A and S8B in FIG. However, in the following text, the same reference numerals are given to the parts described above, and the description may be omitted.

  The development processing method according to the present modification is different from the development processing method according to the embodiment in that the developer is supplied while moving the developer nozzle in the developer supply step. That is, in the development processing method according to the embodiment, unlike the case where the developer is supplied in a state where the developer nozzle is disposed at a position above the central portion of the wafer, the development processing method according to the present modification is different from the development processing method according to the present embodiment. The developer is supplied while moving the liquid nozzle between a position above the center of the wafer and a position above the peripheral edge of the wafer.

  Further, the development processing method according to this modification is different from the development processing method according to the embodiment in that pure water is supplied while moving the rinsing liquid nozzle in the pure water supply step. That is, the development processing method according to the embodiment is different from supplying pure water in a state where the rinse liquid nozzle is disposed at a position above the central portion of the wafer. Pure water is supplied while moving the liquid nozzle between a position above the center of the wafer and a position above the peripheral edge of the wafer.

  Also in the development processing step for performing the development processing method according to this modification, the processing recipe is determined according to the conditions of the type of resist used and the type of resist pattern to be formed (line system, hole system), and the control unit The development processing is performed under the control of No. 7, as in the development processing method according to the embodiment. Moreover, the process recipe shown in FIG. 10 has each step from step S1 to step S13.

  First, steps S1 to S6 are performed. Steps S1 to S6 are the same as steps S1 to S6 included in the processing recipe shown in FIG.

  Next, step S7A to step S8B are repeated six times as described in the step repetition column of FIG.

  Step S7A is a step of supplying the developer from the developer nozzle 4a to the central portion of the wafer W for a predetermined time (8 seconds in FIG. 10). In step S7A, the developer D supplied from the developer nozzle 4a to the central portion of the wafer W spreads outside the wafer W along the surface of the wafer W due to the centrifugal force of the wafer W, and reaches the surface of the wafer W. A thin liquid film is formed. Further, the exposed region of the resist that can be dissolved in the developer by the exposure process in advance reacts with the developer D to become a dissolved product.

  Step S7B is performed after step S7A. Step S7B is a step of supplying the developer D to the surface of the wafer W while moving the developer nozzle 4a from the center of the wafer W toward the periphery for a predetermined time (2 seconds in FIG. 10). In step S7B, since the wafer W is rotating, the developing solution D is spirally supplied from the center of the wafer W toward the periphery. As a result, the developer D is directly supplied from the developer nozzle 4 a to the surface of the wafer W even at the periphery of the wafer W.

  Step S8A is performed after step S7B. In step S8A, the nozzle to be discharged is switched from the developing solution nozzle 4a to the rinsing solution nozzle 4b, and the rinsing solution R made of pure water is supplied from the rinsing solution nozzle 4b to the center of the wafer W for a predetermined time (1 second in FIG. 10). It is the process of supplying to a part. In step S8A, the rinsing liquid R supplied from the rinsing liquid nozzle 4b to the central portion of the wafer W spreads outside the wafer W along the surface of the wafer W by the action of the centrifugal force of the wafer W, and steps S7A and S7B. The thin liquid film made of the developer D formed on the surface of the wafer W is washed away from the surface of the wafer W. Further, the rinsing liquid R ishes away from the surface of the wafer W together with the liquid film, the dissolved product generated by the reaction of the exposed area of the resist with the developer D.

  Step S8B is performed after step S8A. Step S8B is a step of supplying the rinsing liquid R made of pure water to the surface of the wafer W while moving the rinsing liquid nozzle 4b from the center of the wafer W toward the peripheral edge for a predetermined time (2 seconds in FIG. 10). It is. In step S8B, since the wafer W is rotating, the rinse liquid R made of pure water is supplied directly to the surface of the wafer W.

  After step S8B, the process returns to step S7A again, and step S7A, step S7B, step S8A, and step S8B are performed. By repeating Steps S7A to S8B a plurality of times (six times in FIG. 10) in this way, the substrate surface development process and the developer rinsing process are repeated, and the substrate surface development process proceeds.

  In each of step S7B and step S8B, the moving speed from the center to the peripheral edge of developer nozzle 4a and rinse liquid nozzle 4b can be set to, for example, 75 mm / sec. In addition, the rotation speed of the wafer W in steps S7A to S8B, the flow rate of supplying the developer D in steps S7A and S7B, and the flow rate of supplying the rinse liquid R in steps S8A and S8B are shown in FIG. 5 in the embodiment. It can be set similarly to the recipe shown.

  Thereafter, Steps S9 to S13 are performed, and a series of development processing is completed. Steps S9 to S13 are the same as steps S9 to S13 included in the processing recipe shown in FIG.

  According to the development processing method according to this modified example, at the peripheral edge of the wafer, not only when the developer supplied to the center of the wafer spreads outside the wafer along the surface of the wafer by the action of centrifugal force, As the developing solution nozzle 4a moves from the central portion of the wafer to the peripheral portion, the developing solution supplied from the developing solution nozzle 4a may be directly supplied to the wafer. Accordingly, since the developer containing no dissolved product or the like is directly supplied to the surface of the wafer, the exposed area can be efficiently reacted with the developer at the peripheral portion of the wafer as in the central portion of the wafer. .

  Further, according to the development processing method according to the present modification, at the periphery of the wafer, only when pure water supplied to the central portion of the wafer spreads outside the wafer along the surface of the wafer by the action of centrifugal force. In some cases, pure water supplied from the rinsing liquid nozzle 4b may be directly supplied to the wafer as the rinsing liquid nozzle 4b moves from the center to the peripheral edge of the wafer. Accordingly, pure water that does not contain dissolved products or the like is directly supplied to the surface of the wafer, so that the exposure area is also generated at the periphery of the wafer by reacting with the developer, as in the center of the wafer. It is possible to efficiently remove the dissolved product that acts to prevent dissolution of the region.

  In this modified example, the developer nozzle and the rinse liquid nozzle are moved from the central portion of the wafer toward the peripheral portion in the developer supply step and the pure water supply step, respectively. Alternatively, pure water may be supplied in a state where it is disposed at a position above the substrate, and only the developer nozzle may be moved from the central portion toward the peripheral portion of the wafer.

  Next, the development processing method according to the present invention will be described more specifically with reference to examples. However, the present invention is not construed as being limited to the examples.

In this example, the developing device shown in the embodiment was manufactured, and the effect was verified by performing an experiment using the manufacturing device. A wafer having a diameter of 300 mm was used as the substrate to be processed.
(Example)
As an example, a processing recipe in which the number of repetitions was changed in the processing recipe shown in FIG. 5 was used to develop a fine pattern under the conditions shown in Table 1, and the CD value of the fine pattern was measured using an SEM.

(Comparative example)
As a comparative example, the fine pattern was developed under the same conditions as in Table 1 except that the rinse treatment was not performed in the middle according to the conditions in Table 1, and the CD value of the fine pattern was determined using an SEM. It was measured.

  FIG. 11 shows the result of measuring the CD value of the fine pattern by the development processing methods of the example and the comparative example with an SEM. FIG. 11 is a graph showing the CD value of a fine pattern developed using the development processing method of the example compared with the CD value of a fine pattern developed using the development processing method of the comparative example. It is. The vertical axis in FIG. 11 represents the state of increase or decrease from CD1, where CD1 is a predetermined value that is the target value of the CD value.

  The horizontal axis in FIG. 11 indicates the total development time excluding the rinse time in the development processing step. For example, in the embodiment, when the development process is performed under the conditions shown in FIG. 5 and Table 1, the rinse process is performed for 3 seconds every time the development process is performed for 10 seconds, and the rinse process time is equal to the total development time. Is not counted. Therefore, for example, when the total development time is 30 seconds, the CD value is 10 seconds of development processing → 3 seconds of rinse processing → 10 seconds of development processing → 3 seconds of rinse processing → 10 seconds of development processing → 3 seconds of development time. This corresponds to the CD value dimension of the fine pattern of the wafer W processed in the order of the rinsing process.

  On the other hand, in the comparative example, the development process is continuously performed without performing the rinse process. Therefore, for example, the CD value when the total development time is 30 seconds corresponds to the CD value size of the fine pattern of the wafer W subjected to the development processing for 30 seconds continuously.

  As shown in FIG. 11, after the development process for 10 seconds, the CD value of about (CD1) +15 nm was obtained in both the comparative example and the example. In addition, after the development process for 20 seconds, a CD value of about (CD1) +5 nm was obtained in both the comparative example and the example (the development process was performed for 20 seconds in the example). This corresponds to the case where the development process for 10 seconds → the rinse process for 3 seconds → the development process for 10 seconds → the rinse process for 3 seconds is performed).

  On the other hand, after developing for 30 seconds excluding the rinsing time, the CD value obtained in the example was smaller than the CD value obtained in the comparative example. Specifically, in the case of the comparative example, the CD value is about (CD1) +2 nm, whereas in the case of the example, the CD value is about (CD1) nm. Similarly, when the development time excluding the rinsing time was 40 seconds or more, the CD value obtained in the example was smaller than the CD value obtained in the comparative example.

  Here, FIG. 12 shows the result of comparing the LWR value obtained in the example with the LWR value obtained in the comparative example. FIG. 12 is a graph showing values obtained by standardizing the LWR obtained in the comparative example and the example with the LWR of the comparative example. As shown in FIG. 12, the LWR value of the example was about 0.94 times or less than the LWR value of the comparative example, and the LWR could be reduced.

  That is, it has been clarified that the development processing method according to the embodiment of the present invention is effective in improving the LWR of the fine pattern to be formed.

  Further, when the target value of the CD value by the development processing is set to (CD1) nm, for example, in order to obtain a desired CD value (CD1), the developing time was required about 60 seconds (1 min). On the other hand, in the examples, the development time was about 30 seconds (0.5 min). Even in the case where the time for the rinsing process that is periodically performed in the middle is added, in the case of the example, the developing time is about 39 seconds. Accordingly, it has been clarified that the development processing method according to the embodiment of the present invention can improve the throughput of the development processing time as compared with the conventional development processing method.

  Further, as shown in Table 1, the flow rate of the developer in the development process is 600 ml / min in both the examples and the comparative examples, which are equal to each other. Therefore, in the comparative example, 600 ml / min × 1 min = 600 ml of developer was consumed before reaching the target value of CD value (CD1) nm, but in the example, the target value of CD value (CD1) Only 600 ml / min × 0.5 min = 300 ml of developer was consumed before reaching the value of. That is, it has been clarified that the development processing method according to the embodiment of the present invention can reduce the consumption of the developer compared to the conventional development processing method.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

100 Coating / Developing Equipment 2 Spin Chuck (Substrate Holding Unit)
22 Drive mechanism (rotary drive mechanism)
3 Cup body 4a Developer nozzle 4b Rinse solution nozzle 5a, 5b Nozzle arms 51a, 51b Moving substrate (moving mechanism)
52 Guide member (movement mechanism)
6 Chemical solution supply unit 7 Control unit 111 Resist 112 Exposure region 113 Non-exposure region 114 Dissolved product 115 Intermediate exposure region D Developer R Rinse solution DEV Development unit (developer)
W wafer (substrate)

Claims (4)

In the development processing method in which a resist is applied on the surface and the substrate after exposure is held horizontally and developed while rotating around the vertical axis.
The substrate is rotated, and a position above the central portion of the substrate and a position above the peripheral portion of the substrate are formed on the surface of the substrate from the discharge port of the developer nozzle disposed above the substrate. A developer supply step for supplying the developer while moving between the developer,
Next, the substrate is rotated, and a position above the central portion of the substrate and a position above the peripheral portion of the substrate from the discharge port of the pure water nozzle disposed above the substrate to the surface of the substrate. And a pure water supply step for supplying pure water while moving between
The development processing method, wherein the developer supply step and the pure water supply step are repeated a plurality of times .   The development processing method according to claim 1, wherein the developer supply step is started immediately after the pure water supply step.   3. The development processing method according to claim 1, wherein in the developer supply step, a developer having a temperature higher than normal temperature is supplied. In the second and subsequent developer supply steps, the substrate is rotated at a rotational speed equal to the rotational speed of rotating the substrate in the first developer supply step, and the developer is supplied in the first developer supply step. 4. The developer according to claim 1, wherein the developer is supplied at a flow rate equal to a flow rate of the developer for a time equal to a time during which the developer is supplied in the first developer supply step. The development processing method described in 1.