JP5210501B2 - Method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing an integrated circuit device, an integrated circuit device, a product using the integrated circuit device, and a semiconductor device.

In recent years, technology development for transposing a thin film circuit provided on an insulating substrate has been advanced. As such a technique, for example, a peeling layer is provided between the thin film circuit and the substrate, and the peeling layer is removed using a gas containing halogen, whereby the thin film circuit is separated from the supporting substrate and then transferred. There is a technology (see Patent Document 1).
JP-A-8-254686

The technique described in Patent Document 1 has a structure in which a thin film transistor is sandwiched between a base film and a passivation film such as an interlayer insulating film and a silicon nitride film, and an electrode electrically connected to the thin film transistor is formed on the passivation film. A semiconductor integrated circuit having the above is peeled off from a substrate and used as a driver circuit of a display device. In other words, the electrode for connecting to the outside is peeled off from the substrate in a state where the electrode for connecting to the outside is previously formed above the thin film transistor, and therefore, an electrode for connecting to the outside is not formed below the thin film transistor.

Therefore, an object of the present invention is to provide a structure of an integrated circuit device and a method for manufacturing the integrated circuit device, in which an electrode for connecting to the outside can be easily formed below a thin film circuit.

A first configuration of an integrated circuit device of the present invention for solving the above problems includes a first insulating film, a layer including a thin film circuit formed on one surface of the first insulating film, and a thin film circuit A second insulating film formed thereon, an electrode formed on the second insulating film and electrically connected to the thin film circuit, a resin film formed on the electrode, and a first insulating film It has a conductive film formed on the other surface and electrically connected to the electrode.

The conductive film is electrically connected to the electrode through a hole formed in the first insulating film, the layer including the thin film circuit, and the second insulating film.

The integrated circuit device of the present invention may have a hole formed in the first insulating film, the layer including the thin film circuit, the second insulating film, the electrode, and the resin film.
In this case, the conductive film is electrically connected to the electrode through a portion of the hole formed in the first insulating film, the layer including the thin film circuit, and the second insulating film.

A second configuration of an integrated circuit device according to the present invention for solving the above-described problems includes a first insulating film, a layer including a thin film circuit formed on one surface of the first insulating film, and a thin film circuit A second insulating film formed thereon; an electrode formed on the second insulating film and electrically connected to the thin film circuit; a third insulating film formed on the electrode; It has a conductive film formed on the other surface of the insulating film and electrically connected to the electrode.

The third configuration of the integrated circuit device of the present invention for solving the above-described problem is that a substrate having a thickness of 100 μm or less, a first insulating film formed on one surface of the substrate, and the first A layer including a thin film circuit formed on the insulating film, a second insulating film formed on the thin film circuit, and formed on the second insulating film and electrically connected to the thin film circuit. And a third insulating film formed on the electrode, and a conductive film formed on the other surface of the substrate and electrically connected to the electrode.

The conductive film is electrically connected to the electrode through a hole formed in the first insulating film, the layer including the thin film circuit, and the second insulating film.

The integrated circuit device of the present invention may have a hole formed in the first insulating film, the layer including the thin film circuit, the second insulating film, the electrode, and the third insulating film.
In this case, the conductive film is electrically connected to the electrode through a portion of the hole formed in the first insulating film, the layer including the thin film circuit, and the second insulating film.

In the first and second configurations of the integrated circuit device of the present invention, the thin film circuit formed in the layer including the thin film circuit is one or more selected from thin film transistors, resistors, capacitors, and inductors. It is a thin film circuit having an element.

The present invention is also a method for manufacturing an integrated circuit device having the first configuration, wherein the first insulating film, a thin film circuit formed on one surface of the first insulating film, and the thin film circuit Forming a laminate having a second insulating film formed on the electrode, an electrode formed on the second insulating film and electrically connected to the thin film circuit, and a resin film formed on the electrode; A conductive film is formed on the other surface side of the first insulating film of the stack so as to overlap the electrode, and the conductive film is irradiated with a laser.

The present invention is also a method for manufacturing an integrated circuit device having the above-described second configuration, in which a first insulating film, a thin film circuit formed on one surface of the first insulating film, A laminate having a second insulating film formed on the electrode, an electrode formed on the second insulating film and electrically connected to the thin film circuit, and a third insulating film formed on the electrode. The conductive film is formed over the other surface of the first insulating film of the stack so as to overlap with the electrode, and the conductive film is irradiated with laser.

According to a method for manufacturing an integrated circuit device of the present invention, a first substrate having a thickness of 100 μm or less, a first insulating film formed on the first substrate, and one surface of the first insulating film A thin film circuit formed thereon; a second insulating film formed on the thin film circuit; an electrode formed on the second insulating film and electrically connected to the thin film circuit; A stack having a third insulating film formed on the second insulating film and a second substrate formed on the third insulating film is formed, and the electrode is formed on the other surface of the first insulating film. A conductive film is formed so as to overlap with the conductive film, and the conductive film is irradiated with a laser.

In the method for manufacturing an integrated circuit device according to the present invention, the thin film circuit is a circuit having one or more elements selected from a thin film transistor, a resistor, a capacitor, and an inductor.

In the integrated circuit device of the present invention, a conductive film is formed in a layer different from the electrode so as to overlap with the electrode electrically connected to the thin film circuit, and the conductive film is electrically connected to the electrode by irradiating with a laser. Thus, a conductive film for connection to the outside can be easily formed. Further, by forming a conductive film for connection with the outside which is electrically connected to the electrode by irradiating a laser, the electrical resistance between the electrode and the conductive film for connection can be reduced.

(Embodiment 1)

In this embodiment, a method for manufacturing an integrated circuit device in the case where a circuit including a thin film transistor is formed as the thin film circuit will be described.

First, as illustrated in FIG. 1A, the separation layer 101 is formed over the substrate 100. As the peeling layer 101, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium, etc. are formed by plasma CVD or sputtering. An element selected from (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si) or the element as a main component A layer made of an alloy material or a compound material is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

As the substrate 100, a quartz substrate, a semiconductor substrate, a glass substrate, a metal substrate, or the like may be used.

In the case where the separation layer 101 has a single-layer structure, preferably, tungsten, molybdenum, a mixture of tungsten and molybdenum, tungsten oxide, tungsten oxynitride, tungsten nitride oxide, molybdenum oxide, molybdenum oxynitride A layer including any one of molybdenum nitride oxide, oxide of tungsten and molybdenum mixture, oxynitride of tungsten and molybdenum mixture, and nitride oxide of tungsten and molybdenum mixture is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In the case where the separation layer 101 has a stacked structure, preferably, a layer containing tungsten, molybdenum, a mixture of tungsten and molybdenum is formed as a first layer, and a tungsten oxide, a molybdenum oxide, and tungsten are formed as a second layer. Oxide of molybdenum mixture, tungsten oxynitride, molybdenum oxynitride, oxynitride of tungsten and molybdenum mixture.

Thus, when the peeling layer 101 has a stacked structure, it is preferable to have a stacked structure of a metal film and a metal oxide film. As an example of a method of forming a metal oxide film, a method of directly forming a metal oxide film by a sputtering method, a surface of the metal film formed on the substrate 100 is subjected to heat treatment or plasma treatment in an oxygen atmosphere, and the surface of the metal film is formed. Examples of the method include forming a metal oxide film by oxidation. Preferably, the metal oxide film is formed on the surface of the metal film by performing high-density plasma treatment in an atmosphere containing oxygen on the surface of the metal film. Good. For example, in the case where a tungsten film formed by a sputtering method is provided as the metal film, a metal oxide film made of a tungsten oxide can be formed on the tungsten film surface by performing high-density plasma treatment on the tungsten film.

As the metal film, in addition to the above-described tungsten (W) and molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc A film made of an element selected from (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or a compound material containing the element as a main component. Can be used.

In this specification, “high density plasma treatment” means that the electron density of plasma is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and the electron temperature of plasma is 0.5 eV or more and 1.5 eV or less. It is characterized by being. Although the electron density of the plasma is high, the electron temperature in the vicinity of an object to be processed (herein, “metal film”) formed on the substrate is low, so that plasma damage to the substrate is prevented. Can do. Further, since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or more, a dense film with excellent film thickness uniformity of an oxide formed by oxidation treatment can be formed. In addition, since the electron temperature of plasma is as low as 1.5 eV or less, the oxidation treatment can be performed at a lower temperature as compared with a normal plasma treatment or thermal oxidation method. For example, even if the plasma treatment is performed at a temperature lower than the strain point temperature of the glass substrate by 100 degrees or more (typically 250 to 550 ° C.), the plasma oxidation treatment can be sufficiently performed. Note that a microwave (2.45 GHz) is used as a frequency for forming plasma. Further, the plasma potential is as low as 5 V or less, and excessive dissociation of source molecules can be suppressed.

As an atmosphere containing oxygen, oxygen (O ₂ ) or dinitrogen monoxide (N ₂ O) and a mixed gas of a rare gas, or oxygen (O ₂ ) or dinitrogen monoxide (N ₂ O), A mixed gas of a rare gas and hydrogen (H ₂ ) can be used. Examples of the rare gas include argon (Ar), xenon (Xe), and krypton (Kr). Moreover, what is necessary is just to determine suitably the pressure ratio of each gas in mixed gas. The metal oxide film formed under such conditions is a film containing a rare gas element. In addition, since the plasma conditions are a low electron temperature (1.5 eV or less) and a high electron density (1.0 × 10 ¹¹ cm ⁻³ or more), a metal oxide film with very little plasma damage is formed at a low temperature. be able to.

Note that before the separation layer 101 is formed, an insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film is formed over the substrate 100, and the separation layer 101 is formed over the insulating film. You may make it do. By providing such an insulating film between the substrate 100 and the separation layer 101, impurities contained in the substrate 100 can be prevented from entering the upper layer. Further, although there is a step of irradiating a laser later, the substrate 100 can be prevented from being etched during the step. Note that here, the silicon oxynitride film and the silicon nitride oxide film are selectively used in the sense that the former contains more oxygen than nitrogen and the latter contains more nitrogen than oxygen.

Next, as illustrated in FIG. 1B, a first insulating film 102 is formed so as to be in contact with the separation layer 101. The first insulating film 102 is a film that functions as a base film. As the first insulating film 102, a silicon oxide, a silicon nitride, a silicon oxide containing nitrogen, a silicon nitride containing oxygen, or the like is formed by a plasma CVD method, a sputtering method, or the like.

As shown in FIG. 1C, a layer 104 including a circuit 103 having a thin film transistor is formed over the first insulating film 102 by a known method. As the layer 104 including the circuit 103 having thin film transistors, for example, a plurality of thin film transistors, a second insulating film 110 covering the plurality of thin film transistors, and a source region or a drain region of the plurality of thin film transistors in contact with the second insulating film 110 A source wiring or a drain wiring 111 is formed. The thin film transistor includes an island-shaped semiconductor film 107, a gate insulating film 108, a gate electrode 109 formed with a sidewall, and the like. In FIG. 1C, a circuit having an N-channel thin film transistor 105 and a P-channel thin film transistor 106 is shown as an example of the circuit 103 having a thin film transistor; however, the structure is particularly limited to such a circuit structure. Not what you want. In FIG. 1C, as the N-channel thin film transistor 105, a top-gate thin film transistor having a side wall formed on the gate electrode and having an LDD region (low-concentration impurity region) is formed. Although an example is shown in which a top-gate thin film transistor in which a sidewall is formed on the gate electrode is formed as the thin film transistor 106, the structure of the thin film transistor is not limited to this structure. A known thin film transistor structure such as a thin film transistor having no LDD region (low-concentration impurity region), a bottom-gate thin film transistor, or a thin film transistor having a silicide region can be used.

Hereinafter, an example of a method for forming the layer 104 including the circuit 103 having a thin film transistor will be described in detail.

First, an amorphous semiconductor film is formed over the first insulating film 102. The amorphous semiconductor film is formed by various CVD methods such as a sputtering method and a plasma CVD method. Subsequently, the amorphous semiconductor film is crystallized to form a crystalline semiconductor film. As crystallization methods, laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, thermal crystallization using a metal element that promotes crystallization A method combining a laser crystallization method and a laser crystallization method can be used. After that, the obtained crystalline semiconductor film is patterned into a desired shape, so that an island-shaped semiconductor film 107 is formed. Note that the separation layer 101, the first insulating film 102, and the amorphous semiconductor film can be formed successively without being exposed to the air.

An example of a manufacturing process of the crystalline semiconductor film is briefly described below. As a method for crystallizing an amorphous semiconductor film, a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or a metal that promotes crystallization Examples include a combination of a thermal crystallization method using an element and a laser crystallization method. As another crystallization method, crystallization may be performed by applying a DC bias to generate thermal plasma and applying the thermal plasma to the semiconductor film.

When the laser crystallization method is used, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. Usable laser beams include Ar laser, Kr laser, excimer laser and other gas lasers, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as dopants are added as a medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, copper vapor lasers, and gold vapor lasers that oscillate from one or more types can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. Energy density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, one or more added lasers, Ar ion lasers, and Ti: sapphire lasers that are continuously oscillated. It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

In the case of crystallization using the above-described continuous wave laser or a laser beam oscillated at a frequency of 10 MHz or higher, the surface of the crystallized semiconductor film can be made flat. As a result, it is possible to reduce the thickness of the gate insulating film 108 to be formed later, and contribute to improving the withstand voltage of the gate insulating film 108.

In addition, when ceramic (polycrystal) is used as a medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

Since it is difficult to change the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission, whether it is single crystal or polycrystal, there is a certain limit to improving the laser output by increasing the dopant concentration. . However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, a great improvement in output can be expected.

Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. In addition, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become. In addition, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the long side direction.

By irradiating the semiconductor film with this linear beam, the semiconductor film can be annealed more uniformly. If uniform annealing is required up to both ends of the linear beam, it is sufficient to arrange a slit at both ends to shield the energy attenuation portion.

When a semiconductor film is annealed using a linear beam having a uniform intensity obtained in this way and a semiconductor device is manufactured using this semiconductor film, the characteristics of the semiconductor device are made good and uniform. Can do.

An example of a specific method is given as a thermal crystallization method using a metal element that promotes crystallization. After a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), and thermal crystallization. Processing (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. After that, laser light is irradiated as necessary, and the island-shaped semiconductor film 107 may be formed by patterning using a photolithography method.

The thermal crystallization method using a metal element that promotes crystallization is advantageous in that the amorphous semiconductor film can be crystallized at a low temperature in a short time and the crystal orientation is aligned. Since it remains in the semiconductor film, the off-current increases and the characteristics are not stable. Therefore, an amorphous semiconductor film functioning as a gettering site is preferably formed over the crystalline semiconductor film. Since the amorphous semiconductor film serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method which can contain argon at a high concentration. Then, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor film, and then the amorphous semiconductor film containing the metal element is removed. To do. By performing such a gettering process, the content of the metal element in the crystalline semiconductor film can be reduced or removed.

Next, a gate insulating film 108 that covers the island-shaped semiconductor film 107 is formed. The gate insulating film 108 is formed by a single layer or a stack of films containing silicon oxide or silicon nitride by various CVD methods such as a sputtering method and a plasma CVD method. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single-layer structure, or these films are stacked as appropriate. Further, the surface of the island-shaped semiconductor film 107 is oxidized or nitrided by performing the above-described high-density plasma treatment on the island-shaped semiconductor film 107 in an atmosphere containing oxygen, nitrogen, or oxygen and nitrogen. Thus, a gate insulating film may be formed. A gate insulating film formed by high-density plasma treatment has excellent uniformity in film thickness, film quality, and the like as compared with a film formed by a CVD method, a sputtering method, or the like, and can form a dense film. As an atmosphere containing oxygen, oxygen (O ₂ ), nitrogen dioxide (NO ₂ ), a mixed gas of dinitrogen monoxide (N ₂ O) and a rare gas, or oxygen (O ₂ ) and nitrogen dioxide ( A mixed gas of NO ₂ ) or dinitrogen monoxide (N ₂ O), a rare gas, and hydrogen (H ₂ ) can be used. As the atmosphere containing nitrogen, nitrogen _{(N 2)} or ammonia (NH _3), a mixed gas of a rare gas or a nitrogen _{(N 2)} or ammonia (NH _3), and a rare gas, hydrogen ( A mixed gas with H ₂ ) can be used. The surface of the island-shaped semiconductor film 107 can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by high-density plasma.

In the case where the gate insulating film 108 is formed by performing high-density plasma treatment, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the island-shaped semiconductor film 107. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the island-shaped semiconductor film 107 can be extremely low. Further, since the island-shaped semiconductor film 107 is directly oxidized or nitrided, the thickness of the formed gate insulating film 108 can ideally be extremely small. Furthermore, since strong oxidation does not occur even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, by subjecting the surface of the semiconductor film to solid phase oxidation by the high-density plasma treatment shown here, the insulating film has a good uniformity and low interface state density without causing an abnormal oxidation reaction at the crystal grain boundary. Can be formed.

Note that only an insulating film formed by high-density plasma treatment may be used for the gate insulating film 108. In addition, silicon oxide, silicon nitride containing oxygen, or nitrogen may be formed by a CVD method using plasma or thermal reaction. An insulating film such as silicon oxide may be deposited and stacked. Note that in FIG. 1C, in addition to the insulating film formed by high-density plasma treatment, an insulating film is stacked by a CVD method. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

In addition, a crystalline semiconductor film that is crystallized by scanning in one direction while irradiating an amorphous semiconductor film with a continuous wave laser or a laser beam that oscillates at a frequency of 10 MHz or more has a crystal in the scanning direction of the beam. There is a growing property. Therefore, by arranging the transistor so that the scanning direction matches the channel length direction (the direction in which carriers flow when the channel formation region is formed) and combining the gate insulating film 108 formed by high-density plasma treatment, characteristic variation Thus, a transistor having a smaller field-effect mobility can be obtained.

Next, the gate electrode 109 is formed over the gate insulating film 108. The gate electrode 109 may be formed by various CVD methods such as a sputtering method and a plasma CVD method. The gate electrode 109 is selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like. Or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used.

Next, an impurity element is selectively added to the island-shaped semiconductor film 107 by an ion doping method or an ion implantation method, so that an N-channel thin film transistor 105 and a P-channel thin film transistor 106 are formed. Note that in FIG. 1C, the N-channel thin film transistor 105 has an LDD region (low-concentration impurity region) formed using an insulating film (side wall) in contact with the side surface of the gate electrode 109. An impurity element imparting N-type used for forming the N-channel thin film transistor 105 may be an element belonging to Group 15, for example, phosphorus (P) or arsenic (As). An impurity element imparting P-type used for forming the P-channel thin film transistor 106 may be an element belonging to Group 13, for example, boron (B).

Through the above steps, after the N-channel thin film transistor 105 and the P-channel thin film transistor 106 are completed, heat treatment is performed for the purpose of restoring the crystallinity of the semiconductor film and activating the impurity element added to the semiconductor film. You may go. Preferably, after the heat treatment, the exposed surface of the gate insulating film 108 is subjected to high-density plasma treatment in an atmosphere containing hydrogen so that the surface of the gate insulating film 108 contains hydrogen. It may be. This is because this hydrogen can be used when a subsequent step of hydrogenating the semiconductor film is performed. Alternatively, the semiconductor film can be hydrogenated by performing high-density plasma treatment in an atmosphere containing hydrogen while heating the substrate at 350 to 450 ° C. Note that as the atmosphere containing hydrogen, a gas in which hydrogen (H ₂ ) or ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) are mixed can be used. When a mixed gas of ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) is used as the atmosphere containing hydrogen, the surface can be nitrided simultaneously with hydrogenation of the surface of the gate insulating film 108.

Next, the second insulating film 110 is formed so as to cover the plurality of thin film transistors. The second insulating film 110 is formed by an SOG method, a droplet discharge method, or the like, an inorganic material such as silicon oxide or silicon nitride, an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy, or siloxane. Is used to form a single layer or a stacked layer. Note that siloxane in this specification has a skeleton structure formed of a bond of silicon (Si) and oxygen (O), and an organic group containing at least hydrogen (eg, an alkyl group or aromatic hydrocarbon) as a substituent. Used. Further, as a substituent, a fluoro group may be used, or an organic group containing at least hydrogen and a fluoro group may be used. For example, when the second insulating film 110 has a three-layer structure, a film mainly containing silicon oxide is formed as the first insulating film, and a film mainly containing resin is formed as the second insulating film. A film containing silicon nitride as a main component is preferably formed as the third insulating film. In the case where the second insulating film 110 has a single-layer structure, a silicon nitride film or a silicon nitride film containing oxygen is preferably formed. At this time, hydrogen is preferably applied to the surface of the silicon nitride film or the silicon nitride film containing oxygen by performing high-density plasma treatment in an atmosphere containing hydrogen on the silicon nitride film or the silicon nitride film containing oxygen. Make it contain. This is because this hydrogen can be used when the hydrogenation step of the island-shaped semiconductor film 107 is performed later. Alternatively, the semiconductor film can be hydrogenated by performing high-density plasma treatment in an atmosphere containing hydrogen while heating the substrate at 350 to 450 ° C. Note that as the atmosphere containing hydrogen, a gas in which hydrogen (H ₂ ) or ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) are mixed can be used. When a mixed gas of ammonia (NH ₃ ) and a rare gas (eg, argon (Ar)) is used as the atmosphere containing hydrogen, the surface can be nitrided simultaneously with hydrogenation of the surface of the gate insulating film 108.

Note that before the second insulating film 110 is formed, heat treatment for recovery of crystallinity of the semiconductor film, activation of an impurity element added to the semiconductor film, or hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied. For example, for the purpose of activating the impurity element, thermal annealing at 500 ° C. or higher may be performed. In addition, when the semiconductor film is to be hydrogenated, thermal annealing at 350 to 450 ° C. may be performed.

Next, the second insulating film 110 and the gate insulating film 108 are etched by photolithography to form a contact hole that exposes the island-shaped semiconductor film 107. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is patterned to form the source wiring or the drain wiring 111.

The source wiring or the drain wiring 111 is formed using a conductive film containing aluminum (Al) as a main component by various CVD methods such as a sputtering method and a plasma CVD method. The conductive film containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Since a conductive film containing aluminum as a main component generally has a difficulty in heat resistance, it is preferable that a conductive film containing aluminum as a main component be sandwiched between barrier films. A barrier film refers to a film having a function of suppressing hillocks of a conductive film mainly composed of aluminum and improving heat resistance. Materials having such functions include chromium, tantalum, tungsten, molybdenum, titanium, and silicon. , Nickel or a nitride thereof. As an example of the structure of the source wiring or the drain wiring 111, a structure in which a titanium film, an aluminum film, and a titanium film are sequentially stacked from the substrate side can be given. Since the titanium film is a highly reducing element, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film can be reduced to make good contact with the crystalline semiconductor film. it can. In addition, it is preferable to nitride the surface of the titanium film formed between the crystalline semiconductor film and the aluminum film by performing high-density plasma treatment in an atmosphere containing nitrogen. As conditions for the high-density plasma treatment, the electron density of plasma is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and the electron temperature of plasma is 0.5 eV or more and 1.5 eV or less. As the atmosphere containing nitrogen, and _{N 2} or NH _3, mixed gas of a noble gas or a _{N 2} or NH _3, a rare gas, may be used a mixed gas of _{H 2.} By nitriding the surface of the titanium film, it is possible to prevent titanium and aluminum from being alloyed in the subsequent heat treatment process, etc., and to prevent the aluminum from diffusing into the crystalline semiconductor film by breaking through the titanium film. it can. Although an example in which an aluminum film is sandwiched between titanium films has been described here, the same can be said when a chromium film, a tungsten film, or the like is used instead of the titanium film. More preferably, using a multi-chamber apparatus, the titanium film is formed, the titanium film surface is nitrided, the aluminum film is formed, and the titanium film is continuously formed without being exposed to the atmosphere.

Through the above steps, the layer 104 including the circuit 103 including a thin film transistor is formed.

Next, as illustrated in FIG. 2A, a third insulating film 112 is formed over the layer 104 including the circuit 103 having a thin film transistor, and the wiring included in the circuit 103 having a thin film transistor is formed over the third insulating film 112. The electrode 113 electrically connected to the substrate is formed using a metal film or the like. Here, a TiN film is formed as the electrode 113 by a sputtering method.

The third insulating film 112 is formed by a known method using an inorganic material such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film, or an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy. , Siloxane or the like to form a single layer or a laminate.

In FIG. 2A, the electrode 113 is formed so as to be connected to the source wiring or drain wiring of the thin film transistor; however, there is no particular limitation in this case. In the thin film circuit, an electrode may be formed at a location where it is desired to be electrically connected to an external circuit.

After the electrode 113 is formed, a resin film 114 is formed with a thickness of 20 to 30 μm on the electrode 113 as shown in FIG. Here, the resin film is formed by applying a resin material such as a thermosetting resin, a UV (ultraviolet) curable resin, or a thermoplastic resin on the electrode 113 using screen printing, and then baking it.

Next, a laser having a wavelength in the ultraviolet region (hereinafter referred to as a UV laser) is irradiated as shown in FIG. 2C to form openings 115 and 116 as shown in FIG. In this manner, by forming the openings 115 and 116, a part of the separation layer 101 is removed, and the first insulating film 102 and the layer 104 including the circuit 103 including the thin film transistor 104, The stacked body 118 including the third insulating film 112, the electrode 113, and the resin film 114 can be easily separated. This separation is performed with the boundary of the inside of the peeling layer 101 or between the peeling layer 101 and the first insulating film 102.

Further, although a UV laser is used in this embodiment mode, the type of laser used in the present invention is not particularly limited as long as the opening 115 can be formed. The laser is composed of a laser medium, an excitation source, and a resonator. Lasers are classified into gas lasers, liquid lasers, and solid-state lasers according to the medium. Free lasers, semiconductor lasers, and X-ray lasers are classified according to the characteristics of oscillation. In the present invention, any laser is used. Also good. Note that a gas laser or a solid laser is preferably used, and a solid laser is more preferably used.

Gas lasers include helium neon laser, carbon dioxide laser, excimer laser, and argon ion laser. The excimer laser includes a rare gas excimer laser and a rare gas halide excimer laser. A rare gas excimer laser oscillates by three types of excited molecules, argon, krypton, and xenon. Argon ion lasers include rare gas ion lasers and metal vapor ion lasers.

Liquid lasers include inorganic liquid lasers, organic chelate lasers, and dye lasers. Inorganic liquid lasers and organic chelate lasers use rare earth ions such as neodymium, which are used in solid-state lasers, as laser media.

The laser medium used by the solid-state laser is obtained by doping a solid matrix with an active species that acts as a laser. The solid matrix is a crystal or glass. The crystal is YAG (yttrium / aluminum / garnet crystal), YLF, YVO ₄ , YAlO ₃ , sapphire, ruby, or alexandride. In addition, the active species having a laser action are, for example, trivalent ions (Cr ³⁺ , Nd ³⁺ , Yb ³⁺ , Tm ³⁺ , Ho ³⁺ , Er ³⁺ , Ti ³⁺ ).

When ceramic (polycrystal) is used as the medium, it is possible to form the medium in a free shape in a short time and at a low cost. When a single crystal is used as a medium, a cylindrical one having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic (polycrystal) is used as a medium, a larger one can be made. It is. Further, since the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of whether it is a single crystal or a polycrystal, there is a certain limit to improving the laser output by increasing the concentration. However, when ceramic is used as the medium, the size of the medium can be remarkably increased as compared with a single crystal, and thus a great improvement in output can be expected. Further, when ceramic is used as the medium, it is possible to easily form a medium having a parallelepiped shape or a rectangular parallelepiped shape. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. In addition, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become. In addition, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the long side direction. By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing is required up to both ends of the linear beam, it is necessary to arrange a slit at both ends to shield the energy attenuating portion.

Note that a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used for the laser used in the present invention. Note that laser irradiation conditions such as frequency, power density, energy density, and beam profile are as follows: the first insulating film 102, the layer 104 including the circuit 103 including the thin film transistor, the third insulating film 112, the electrode 113, and the resin. The thickness is controlled as appropriate in consideration of the thickness of the film 114 and its material.

Note that when the stacked body 118 including the first insulating film 102, the layer 104 including the circuit 103 including the thin film transistor, the third insulating film 112, the electrode 113, and the resin film 114 is separated from the substrate 100, FIG. As shown in (B), the surface of the resin film 114 is adhered to the first film 117, and the first film 117 is pulled in the direction of the white arrow, thereby pulling the first insulating film from the substrate 100. 102, the layer 104 including the circuit 103 including a thin film transistor, the third insulating film 112, the electrode 113, and the stacked body 118 including the resin film 114 are separated. At this time, the substrate 100 and the stacked body 118 are separated inside the peeling layer 101 or at the boundary between the peeling layer 101 and the first insulating film 102. The stacked body 118 after being separated from the substrate 100 has the first insulating film 102 as the outermost surface. The resin film 114 is a film for securing strength when the substrate 100 and the laminate 118 are separated by pulling the first film 117. By having the resin film 114, it is possible to prevent the stacked body 118 from being broken in this step.

The first film 117 is a film having a structure in which an adhesive layer is provided on a base film made of a resin material. Examples thereof include a hot melt film, a UV (ultraviolet) release film, and a heat release film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like.

The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like. The UV (ultraviolet) release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by irradiating the base film with UV (ultraviolet) is formed. Moreover, the heat-release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by heating on the base film is formed.

3C, the surface of the first insulating film 102 (the back side of the thin film circuit), that is, the layer 104 including the circuit 103 having the thin film transistor of the first insulating film 102 is not formed. On the side surface, a conductive film 119 is formed with a thickness of 1 μm to several tens of μm, preferably 10 to 20 μm, at a position overlapping with the electrode 113. The conductive film 119 may be formed by using a conductive material such as Au paste, Ag paste, Cu paste, Ni paste, or Al paste, or solder, for example, by screen printing. When the film thickness of the conductive film 119 is 0.1 μm or less, the film thickness is too thin, and electrical connection with the electrode 113 cannot be achieved in a subsequent process.

Then, as shown in FIG. 4A, the conductive film 119 is irradiated with laser. At this time, the laser output is adjusted so that the conductive film 119 is driven to the depth of the electrode 113 and stops at the electrode 113. Here, laser irradiation was performed using a Nd: YVO _4- pulse laser with a wavelength of 266 nm (fourth harmonic), an oscillation frequency of 15 kHz, and an average output of 3 W. This condition is only a representative condition, and is not particularly limited to this condition. By this laser irradiation, the conductive film 119 and the electrode 113 are electrically connected, and a state as shown in FIG. 4B is obtained. In FIG. 4B, reference numeral 120 denotes a conductive film electrically connected to the electrode 113.

As shown in FIG. 4B, a hole is formed in the layer 104 including the circuit 103 having the thin film transistor and the third insulating film 112 in the portion irradiated with the laser, and the electrode 113 is formed along the side wall portion of the hole. The material forming the conductive film 119 moves to the inside of the electrode 113 and is electrically connected to the electrode 113.

  Here, an optical micrograph from the upper surface of the conductive film 119 before laser irradiation for electrically connecting the conductive film 119 and the electrode 113 is shown in FIG. 32, and the conductive film 119 and the electrode 113 are electrically connected. FIG. 33 shows an optical micrograph from the upper surface of the conductive film 119 after the laser irradiation. 32 and 33 are both taken at a magnification of 50 times. FIG. 33 shows that a circular hole is formed. It is electrically connected to the electrode 113 through this hole. In FIG. 33, the shape of the hole for electrically connecting the conductive film 119 and the electrode 113 is circular, but the shape of the hole is not limited to a circle. In FIG. 33, there is a portion that looks like a crack. This is a portion that is in contact with the measurement electrode when measuring the resistance value, and the conductive film 119 is in the portion that is in contact with the measurement electrode. The surface of the metal is rubbed to give a metallic luster.

Note that, here, an example in which the conductive film 119 is driven to the depth of the electrode 113 and the output of the laser is adjusted so as to stop at the electrode 113 is shown, but the resin film 114 and the first first film 117 are penetrated. The laser output may be adjusted so that a hole is formed.

Then, as shown in FIG. 4C, the portion between the circuit 103 having thin film transistors formed adjacent to each other and the circuit 103 having thin film transistors is irradiated with a laser so that the thin film transistors are formed as shown in FIG. The circuit 103 is divided into three parts 121, 122, and 123 each having one circuit 103. 121, 122, and 123 after the division are integrated circuit devices, respectively.

Note that although the case where the circuit 103 including three thin film transistors is formed over the substrate is described as an example in this embodiment, the number of the circuits 103 including thin film transistors formed over the substrate is not limited thereto. Absent. It goes without saying that the number of circuits 103 having thin film transistors may be one, two, or three or more.

As described above, the integrated circuit device of the present invention is formed.
In the following, a process of forming a semiconductor device by mounting the integrated circuit device of the present invention obtained as described above on a substrate on which an antenna is formed will be described.

As shown in FIG. 24A, a conductive film 723 having an antenna function is formed over the substrate 722. An integrated circuit device 726 is bonded to the substrate 722 using a resin 724 including conductive particles 725. By bonding with the resin 724 including the conductive particles 725, the connection portion in the conductive film 723 having the function of an antenna and the connection conductive film on the back surface of the integrated circuit device 726 are interposed through the conductive particles 725. Are electrically connected.

Then, heat treatment is performed to cure the resin 724 containing the conductive particles 725. When a heat release film is used as the first film 117, the first film 117 can be peeled from the resin film 114 by this heat treatment. FIG. 24B shows a state after the first film 117 is peeled from the resin film 114.

As described above, the integrated circuit device of the present invention can be mounted on a substrate over which an antenna is formed. Note that here, the case where the conductive film having the function of an antenna is electrically connected to the integrated circuit device using a resin containing conductive particles is described. However, the conductive film having the function of an antenna and the integrated circuit device are described. As means for electrically connecting the two, a known method such as solder may be used in addition to the resin containing conductive particles.

Note that when solder is used as a means for electrically connecting the conductive film having an antenna function and the integrated circuit device, heating is performed to melt the solder. Therefore, when a heat release film is used as the first film 117, the first film 117 can be peeled from the resin film 114 by this heating.

It is preferable to perform sealing after the integrated circuit device of the present invention is mounted on a substrate over which an antenna is formed. Sealing may be performed at least on the side where the conductive film 723 having the antenna function is formed on the substrate 722 over which the antenna is formed. FIG. 25A illustrates the case where sealing is performed only on the side where the conductive film 723 having the antenna function is formed on the substrate 722 over which the antenna is formed. When sealing is performed, sealing is performed with the second film 729 having a structure having an adhesive layer on the base film. An example of the second film 729 is a hot melt film. The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like.

Alternatively, as shown in FIG. 25B, sealing may be performed with two films (a second film 727 and a third film 728) from both sides of the substrate 722 on which the antenna is formed. As the second film 727 and the third film 728 in FIG. 25B, films having a structure having an adhesive layer over a base film may be used.

In FIGS. 24 and 25, the case where the first film 117 is peeled off during the heat treatment and sealing is described, but the first film 117 is not peeled off and is bonded onto the resin film 114. It is also possible to perform sealing in a state as it is. In that case, as the first film 117, a film (such as a hot melt film) other than the heat release film can be used.

The integrated circuit device formed in this embodiment is characterized in that a resin film is provided above a circuit having a thin film transistor, and an electrode for electrical connection to the outside is provided on the back side of the circuit having the thin film transistor. . In other words, the conductive film is electrically connected to a circuit having a thin film transistor on the surface where the resin film is not formed. The sum of the thickness of the first insulating film and the thickness of the layer including the circuit including the thin film transistor is about 10 μm or less, and the thickness of the resin film is about 20 to 30 μm. By forming a conductive film that is electrically connected to a circuit having a thin film transistor on a surface that is not formed, a conductive film that is easily electrically connected to a circuit having a thin film transistor as compared with the case of being formed on the resin film side. A film can be formed.

(Embodiment 2)
In Embodiment 1, the case where a circuit including a thin film transistor is formed as the thin film circuit has been described. In this embodiment, the case where a circuit having a resistor is formed as a thin film circuit will be described.
In Embodiment 1, a circuit having a thin film transistor is formed as a thin film circuit. In this embodiment, a resistor is formed as a thin film circuit. Among thin film transistors, resistors, inductors, and capacitors, The present invention can also be carried out for a case having a plurality of types of elements.

First, as illustrated in FIG. 6A, the separation layer 201 is formed over the substrate 200, and the first insulating film 202 is formed over the separation layer 201. The material used for the substrate 200 and the material and formation method of the separation layer 201 may be performed in the same manner as in Embodiment Mode 1.

Next, as illustrated in FIG. 6B, the resistor 204 is formed over the first insulating film 202. The resistor 204 may be formed using Ta ₂ N, for example.
10A and 10B show examples of the shape seen from the upper surface of the resistor 204. FIG. Hereinafter, a case where a resistor having the shape of FIG. 10A is formed as the resistor 204 will be described.

After the resistor 204 is formed, a second insulating film 205 is formed over the resistor 204 as shown in FIG.
Then, as shown in FIG. 6D, an opening 206 is formed in the second insulating film 205. The opening 206 is a hole for making contact between an electrode to be formed later and the resistor 204.
The opening 206 is formed on the regions 216 and 217 in FIG. Note that when the resistor having the shape of FIG. 10B is formed, the opening 206 may be formed over the regions 219 and 220 in FIG. 10B.

After the opening 206 is formed, an electrode 207 that is electrically connected to the resistor 204 is formed over the second insulating film 205 as shown in FIG. The electrode 207 is formed so as to be electrically connected to the portions 216 and 217 in FIG.

After the electrode 207 is formed, a resin film 208 is formed over the electrode 207 as shown in FIG. After that, laser irradiation is performed as shown in FIG. By the laser irradiation, an opening 209 is formed in the separation layer 201, the first insulating film 202, the second insulating film 205, and the resin film 208 as illustrated in FIG. In this manner, by forming the opening 209, a part of the peeling layer 201 is removed, and the first insulating film 202, the resistor 204, the second insulating film 205, and the electrode 207 are removed from the substrate 200. Can be easily separated from the layered body 211 including the circuit 210 having a resistance and the resin film 208. This separation is performed with the boundary between the inside of the peeling layer 201 or between the peeling layer 201 and the first insulating film 202.

Note that any type of laser may be used as in the first embodiment. Laser irradiation conditions, for example, frequency, power density, energy density, beam profile, and the like are appropriately controlled in consideration of the thickness of the layer 210 including the circuit having resistance, the thickness of the resin film 208, the material thereof, and the like.

Note that when the stacked body 211 including the circuit 210 having a circuit having a resistance and the resin film 208 is separated from the substrate 200, the surface of the resin film 208 is formed on the surface of the resin film 208 as illustrated in FIG. 8A, the first film 212 is pulled in the direction of the white arrow as shown in FIG. 8B, and the layer 210 including a circuit having resistance and the resin are pulled from the substrate 200. The stacked body 211 having the film 208 is separated. At this time, the substrate 200 and the stacked body 211 are separated inside the peeling layer 201 or at the boundary between the peeling layer 201 and the first insulating film 202. In the stacked body 211 after being separated from the substrate 200, the first insulating film 202 is the outermost surface. The resin film 208 is a film for securing strength when the substrate 200 and the laminate 211 are separated by pulling the first film 212. By having the resin film 208, it is possible to prevent the stacked body 211 from being broken in this step.

The first film 212 is a film having a structure in which an adhesive layer is provided on a base film made of a resin material, and examples thereof include a hot melt film, a UV (ultraviolet) release film, and a heat release film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like.

The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like. The UV (ultraviolet) release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by irradiating the base film with UV (ultraviolet) is formed. Moreover, the heat-release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by heating on the base film is formed.

When a UV (ultraviolet) release film is used as the first film 212, the first film 212 can be peeled off by irradiating with UV (ultraviolet light) after the peeling step.

In the case where a heat release film is used as the first film 212, the first film 212 can be peeled off by heating after the peeling step.

Then, as shown in FIG. 8C, the surface of the first insulating film 202 (the back side of the thin film circuit), that is, the side where the layer 210 including the circuit having the resistance of the first insulating film 202 is not formed. The conductive film 213 is formed with a thickness of 1 μm to several tens of μm, preferably 10 to 20 μm, on the surface of the electrode 207 at a position overlapping with the electrode 207. The conductive film 213 may be formed using a conductive material such as Au paste, Ag paste, Cu paste, Ni paste, or Al paste, or solder, for example, by screen printing. When the film thickness of the conductive film 213 is 0.1 μm or less, the film thickness is too thin and electrical connection with the electrode 207 cannot be achieved in a later process.

Then, as illustrated in FIG. 8D, the conductive film 213 is irradiated with laser. At this time, the laser output is adjusted so that the conductive film 213 is driven to the depth of the electrode 207 and stops at the electrode 207. Here, laser irradiation was performed using a Nd: YVO _4- pulse laser with a wavelength of 266 nm (fourth harmonic), an oscillation frequency of 15 kHz, and an average output of 3 W. This condition is only a representative condition, and is not particularly limited to this condition. By this laser irradiation, the conductive film 213 and the electrode 207 are electrically connected, and a state as shown in FIG. 9 is obtained.
In FIG. 9, reference numerals 214 and 215 denote conductive films electrically connected to the electrode 207.

As shown in FIG. 9, a hole is formed in the first insulating film 202 and the second insulating film 205 at the position irradiated with the laser, and the conductive film 213 extends to the inside of the electrode 207 along the side wall portion of the hole. The material constituting the electrode moves and is electrically connected to the electrode 207.

Note that, here, an example in which the conductive film 213 is driven to the depth of the electrode 207 and the output of the laser is adjusted so as to stop at the electrode 207 is shown, but the resin film 208 and the first film 212 are penetrated. The laser output may be adjusted.

(Embodiment 3)
In this embodiment, the case where a circuit including an inductor is formed as a thin film circuit will be described. In this embodiment mode, a case where a circuit having one type of element is formed will be described, but the present invention can also be implemented in the case where a plurality of types of elements such as a thin film transistor, a resistor, an inductor, and a capacitor are included.

Hereinafter, a manufacturing process of an integrated circuit device having an inductor will be described using a cross-sectional view focusing on a portion where the inductor is formed.

First, as illustrated in FIG. 11A, a separation layer 301 is formed over a substrate 300, and a first insulating film 302 is formed over the separation layer 301. The material used for the substrate 300, the material of the separation layer 301, and the formation method may be similar to those in Embodiment 1.

Next, as illustrated in FIG. 11B, a coil-shaped first conductive film 303 is formed over the first insulating film 302. The upper part of FIG. 11B is a cross-sectional view, and the lower part of FIG. 11B is a top view.
In the top view of FIG. 11B, reference numerals 304 and 305 denote regions for making contact with electrodes to be formed later.

After the first conductive film 303 is formed, a resin film 306 is formed over the first conductive film 303 as illustrated in FIG. Then, as shown in FIG. 12A, the resin film 306 is irradiated with a laser. By the laser irradiation, an opening 307 is formed in the separation layer 301, the first insulating film 302, and the resin film 306 as shown in FIG. In this manner, by forming the opening 307, the peeling layer 301 is partially removed, and the first insulating film 302 and the first conductive film 303 are stacked from the substrate 300. The stacked body 309 including the layer 308 including a circuit including the resin film 306 can be easily separated. This separation is performed using the inside of the peeling layer 301 or the boundary between the peeling layer 301 and the first insulating film 302 as a boundary.

Note that any type of laser may be used as in the first embodiment. Laser irradiation conditions, for example, frequency, power density, energy density, beam profile, and the like are appropriately controlled in consideration of the thickness of the layer 308 including the circuit having the inductor, the thickness of the resin film 306, and the material thereof.

Note that when the stacked body 309 including the circuit 308 including a circuit having an inductor and the resin film 306 is separated from the substrate 300, the surface of the resin film 306 is formed on the surface of the resin film 306 as illustrated in FIG. The first film 310 is bonded to the first film 310 and the first film 310 is pulled in the direction of the white arrow as shown in FIG. The stacked body 309 including the film 306 is separated. A state of the stacked body 309 and the first film 310 after being separated from the substrate 300 is shown in FIG. When the stacked body 309 is separated from the substrate, the substrate 300 and the stacked body 309 are separated inside the separation layer 301 or at the boundary between the separation layer 301 and the first insulating film 302. In the stacked body 309 after being separated from the substrate 300, the first insulating film 302 is the outermost surface. The resin film 306 is a film for securing strength when the substrate 300 and the stacked body 309 are separated by pulling the first film 310. By including the resin film 306, the stacked body 309 can be prevented from being broken in this step.

The first film 310 is a film having a structure in which an adhesive layer is provided on a base film made of a resin material. Examples thereof include a hot melt film, a UV (ultraviolet) release film, and a heat release film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like.

The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like. The UV (ultraviolet) release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by irradiating the base film with UV (ultraviolet) is formed. Moreover, the heat-release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by heating on the base film is formed.

When a UV (ultraviolet) release film is used as the first film 310, the first film 310 can also be released by irradiating with UV (ultraviolet) after the peeling step.

In the case where a heat release film is used as the first film 310, the first film 310 can be peeled off by heating after the peeling step.

Then, as shown in FIG. 13B, the surface of the first insulating film 302 (the back side of the thin film circuit), that is, the side where the layer 308 including the circuit having the inductor of the first insulating film 302 is not formed. The second conductive film 311 is formed with a thickness of 1 μm to several tens of μm, preferably 10 to 20 μm, on the surface of the first conductive film 303 at positions overlapping with regions 304 and 305 of the first conductive film 303. The second conductive film 311 may be formed using a conductive material such as Au paste, Ag paste, Cu paste, Ni paste, or Al paste, solder, or the like, for example, by screen printing. When the film thickness of the second conductive film 311 is 0.1 μm or less, the film thickness is too thin, and electrical connection with the first conductive film 303 cannot be successfully achieved in a later process.

13B is a cross-sectional view taken along the line AA ′ in the top view. Therefore, in FIG. 13B, the first conductive film 303 in FIG. 11B is formed at a position overlapping with the region 305. Although only the second conductive film 311 is illustrated, the conductive film is also formed at a position overlapping the region 304 included in the first conductive film 303.

Then, as shown in FIG. 13C, the second conductive film 311 is irradiated with laser. At this time, the laser output is adjusted so that the second conductive film 311 is driven to the depth of the first conductive film 303 and stops at the first conductive film 303. Here, laser irradiation was performed using a Nd: YVO _4- pulse laser with a wavelength of 266 nm (fourth harmonic), an oscillation frequency of 15 kHz, and an average output of 3 W. This condition is only a representative condition, and is not particularly limited to this condition. By this laser irradiation, the second conductive film 311 and the first conductive film 303 are electrically connected to each other as shown in FIG. In FIG. 13D, reference numeral 312 denotes a second conductive film electrically connected to the first conductive film 303.

As shown in FIG. 13D, a hole is formed in the first insulating film 302 at the position irradiated with the laser, and the second insulating film 302 extends to the inside of the first conductive film 303 along the side wall portion of the hole. The material forming the conductive film 311 moves and is electrically connected to the first conductive film 303.

Note that here, an example in which the second conductive film 311 is driven to the depth of the first conductive film 303 and the laser output is adjusted so as to stop at the first conductive film 303 is shown, but the resin film 306 is shown. In addition, the output of the laser may be adjusted so as to penetrate the first film 310.

(Embodiment 4)
In this embodiment, a method for manufacturing an integrated circuit device in the case where a thin film circuit includes a capacitor will be described.
In this embodiment mode, a case where a circuit having one type of element is formed will be described, but the present invention can also be implemented in the case where a plurality of types of elements such as a thin film transistor, a resistor, an inductor, and a capacitor are included.

First, as illustrated in FIG. 14A, a separation layer 401 is formed over a substrate 400, and a first insulating film 402 is formed over the separation layer 401. The material used for the substrate 400 and the material and formation method of the separation layer 401 may be performed in the same manner as in Embodiment Mode 1.

Next, as illustrated in FIG. 14B, a capacitor first electrode 403 is formed over the first insulating film 402. For example, a metal film or the like may be formed as the first electrode 403 of the capacitor.
Next, as shown in FIG. 14C, a second insulating film 404 is formed. The second insulating film 404 may be formed of a dielectric such as TiO ₂ , Al ₂ O ₃ , BaTiO ₃ , or SiO ₂ .

Then, as shown in FIG. 14D, a second electrode 405 of the capacitor is formed. The second electrode 405 of the capacitor may be formed of a metal film or the like as with the first electrode of the capacitor.
Thus far, a capacitor composed of the first electrode, the insulating film, and the second electrode is formed.

Then, a resin film 406 is formed on the capacitor thus formed as shown in FIG. The resin film 406 is provided to ensure the strength of the thin film circuit. After the resin film 406 is formed, laser irradiation is performed as shown in FIG. By the laser irradiation, an opening 407 is formed in the separation layer 401, the first insulating film 402, the second insulating film 404, and the resin film 406 as shown in FIG. In this manner, by forming the opening 407, part of the separation layer 401 is removed, and the first insulating film 402, the first electrode 403, the second insulating film 404, and the second electrode 405 are formed. A stacked body 409 including a layer 408 including a circuit having a capacitor and a resin film 406 which are stacked can be easily separated from the substrate 400. This separation is performed with the boundary between the inside of the peeling layer 401 or between the peeling layer 401 and the first insulating film 402.

Note that any type of laser may be used as in the first embodiment. Laser irradiation conditions such as frequency, power density, energy density, beam profile, and the like are appropriately controlled in consideration of the thickness of the layer 408 including a circuit having a capacitor, the thickness of the resin film 406, its material, and the like.

Note that when the stacked body 409 including the circuit 408 including a capacitor and the resin film 406 is separated from the substrate 400, the surface of the resin film 406 is formed as shown in FIG. 16A, the first film 410 is pulled in the direction of a white arrow as shown in FIG. 16A, whereby a layer 408 including a circuit having a capacitor is formed from the substrate 400 and a resin. The stacked body 409 including the film 406 is separated. A state of the stacked body 409 and the first film 410 after being separated from the substrate 400 is illustrated in FIG. When the stacked body 409 is separated from the substrate, the substrate 400 and the stacked body 409 are separated inside the separation layer 401 or at the boundary between the separation layer 401 and the first insulating film 402. In the stacked body 409 after being separated from the substrate 400, the first insulating film 402 is the outermost surface. The resin film 406 is a film for securing strength when the substrate 400 and the laminate 409 are separated by pulling the first film 410. By including the resin film 406, the stacked body 409 can be prevented from being broken in this step.

The first film 410 is a film having a structure in which an adhesive layer is provided on a base film made of a resin material, and examples thereof include a hot melt film, a UV (ultraviolet) release film, and a heat release film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like.

The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like. The UV (ultraviolet) release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by irradiating the base film with UV (ultraviolet) is formed. Moreover, the heat-release film has a configuration in which an adhesive layer made of a resin material whose adhesive strength is weakened by heating on the base film is formed.

In the case where a UV (ultraviolet) release film is used as the first film 410, the first film 410 can be peeled off by irradiating with UV (ultraviolet) after the peeling step.

In the case where a heat release film is used as the first film 410, the first film 410 can be peeled off by heating after the peeling step.

Then, as shown in FIG. 16C, the surface of the first insulating film 402 (the back side of the thin film circuit), that is, the side where the layer 408 including the circuit having the capacitor of the first insulating film 402 is not formed. In this surface, the conductive films 411 and 412 are each formed in a thickness of 1 μm to several tens of μm, preferably 10 to 20 μm, at a position overlapping with a part of the first electrode 403 and a position overlapping with a part of the second electrode 405. It is formed with a film thickness. The conductive films 411 and 412 may be formed using conductive materials such as Au paste, Ag paste, Cu paste, Ni paste, and Al paste, or solder, for example, by screen printing. When the film thickness of the conductive films 411 and 412 is 0.1 μm or less, the film thickness is too thin, and electrical connection with the first electrode 403 and the second electrode 405 cannot be successfully achieved in a later process.

Then, as shown in FIG. 16D, the conductive films 411 and 412 are irradiated with laser. Laser output to the conductive film 411 is adjusted so that the conductive film 411 is driven to the depth of the first electrode 403 and stops at the first electrode 403. The laser applied to the conductive film 412 is adjusted so that the conductive film 412 is driven to the depth of the second electrode 405 and stops at the second electrode 405. Here, laser irradiation was performed using a Nd: YVO _4- pulse laser with a wavelength of 266 nm (fourth harmonic), an oscillation frequency of 15 kHz, an average output of 3 W, and the like. This condition is only a representative condition, and is not particularly limited to this condition. By this laser irradiation, the conductive film 411 and the first electrode 403 are electrically connected, and the conductive film 412 and the second electrode 405 are electrically connected, resulting in a state as shown in FIG. In FIG. 17, reference numeral 413 denotes a conductive film electrically connected to the first electrode 403, and 414 denotes a conductive film electrically connected to the second electrode 405.

As shown in FIG. 17, a hole is formed in the first insulating film 402 at a position irradiated with a laser to form a conductive film 413 electrically connected to the first electrode 403, and the sidewall of the hole is formed. The material forming the conductive film 413 moves along the portion to the inside of the first electrode 403 and is electrically connected to the first electrode 403. In addition, a hole is formed in the first insulating film 402 and the second insulating film 404 at a position irradiated with a laser to form the conductive film 414 electrically connected to the second electrode. The material forming the conductive film 414 moves to the inside of the second electrode 405 along the side wall portion and is electrically connected to the second electrode 405.

Note that here, when the conductive film 413 electrically connected to the first electrode 403 is formed, the laser output is performed so that the conductive film 411 is driven to the depth of the first electrode 403 and stops at the first electrode 403. When the conductive film 414 electrically connected to the second electrode is formed, the laser output is adjusted so that the conductive film 412 is driven to the depth of the second electrode 405 and stops at the second electrode 405. In this example, the laser irradiation for forming the conductive film 413 electrically connected to the first electrode is the same as the laser irradiation for forming the conductive film 414 electrically connected to the second electrode. The laser output may be adjusted so that the resin film 406 and the first film 410 also penetrate.

(Embodiment 5)

In Embodiment 1, the case where a stacked body including a layer including a circuit including a thin film transistor is peeled from a substrate to form a flexible integrated circuit device is described, but in this embodiment, The case where a flexible integrated circuit device is formed by thinning the substrate by grinding or the like will be described.
In the present embodiment, the case where a thin film transistor is formed as a thin film circuit is described. However, the present invention is also applied to a case where one or more kinds of elements selected from a thin film transistor, a resistor, an inductor, and a capacitor are provided. can do.

First, as shown in FIG. 18A, a first insulating film 501 is formed over a first substrate 500. This first insulating film functions as a base film. As the first insulating film 501, a silicon oxide, a silicon nitride, a silicon oxide containing nitrogen, a silicon nitride containing oxygen, or the like is formed by a plasma CVD method, a sputtering method, or the like.

Note that as the first substrate 500, a quartz substrate, a semiconductor substrate, a glass substrate, a metal substrate, or the like may be used.

As shown in FIG. 18B, a layer 504 including a circuit 503 having a thin film transistor is formed over the first insulating film 501 by a known method. As the layer 504 including the circuit 503 having thin film transistors, for example, a plurality of thin film transistors, a second insulating film 510 covering the plurality of thin film transistors, and a source region or a drain region of the plurality of thin film transistors in contact with the second insulating film 510 A source wiring or a drain wiring 511 is formed. The thin film transistor includes an island-shaped semiconductor film 507, a gate insulating film 508, a gate electrode 509 formed with a sidewall, and the like. FIG. 18B illustrates an example of a circuit including an N-channel thin film transistor 505 and a P-channel thin film transistor 506 as the circuit 503 including a thin film transistor; however, the circuit structure is particularly limited to such a circuit structure. Not what you want. In FIG. 18B, as an N-channel thin film transistor 505, a top-gate thin film transistor having a gate electrode with a sidewall and an LDD region (low-concentration impurity region) is formed, and a P-channel thin film transistor is formed. Although an example is shown in which a top-gate thin film transistor in which a sidewall is formed on the gate electrode is formed as the thin film transistor 506, the structure of the thin film transistor is not limited to this structure. A known thin film transistor structure such as a thin film transistor having no LDD region (low concentration impurity region) or a bottom gate thin film transistor can be used.

Note that as a manufacturing method up to the circuit 503 including a thin film transistor, the manufacturing method described in Embodiment 1 can be used.

Then, as illustrated in FIG. 18C, a third insulating film 512 is formed over the layer 504 including the circuit 503 including a thin film transistor, and the wiring included in the circuit 503 including the thin film transistor is formed over the third insulating film 512. An electrically connected electrode 513 is formed.

The third insulating film 512 is formed by a known method using an inorganic material such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film, or an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy. , Siloxane or the like to form a single layer or a laminate.

In FIG. 18C, the electrode 513 is formed so as to be connected to the source wiring or drain wiring of the thin film transistor; however, there is no particular limitation in this case. In the thin film circuit, an electrode may be formed at a location where it is desired to be electrically connected to an external circuit.

Next, as illustrated in FIG. 19A, a fourth insulating film 514 is formed over the electrode 513. The fourth insulating film 514 is formed by a known method using an inorganic material such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film, or an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy. , Siloxane or the like to form a single layer or a laminate.

Then, as illustrated in FIG. 19B, the second substrate 515 is bonded to the fourth insulating film 514 with an adhesive. As the second substrate 515, a quartz substrate, a semiconductor substrate, a glass substrate, a metal substrate, a resin substrate, or the like can be used. It is preferable to use an adhesive that weakens the adhesive strength when heat is applied. In addition, as the second substrate, a film having a structure in which an adhesive layer is provided on a base film, such as a hot melt film, a UV (ultraviolet) release film, or a heat release film, may be used.

Here, in the case where the second substrate 515 is not bonded, in a step of reducing the thickness of the first substrate 500 which will be performed later, the layer 504 including a circuit including a thin film transistor as the thickness of the first substrate 500 decreases. And the third insulating film 512, the electrode 513, and the fourth insulating film 514 are curled. However, in the step of reducing the thickness of the first substrate 500 which is performed later by bonding the second substrate 515, the layer 504 including a circuit having a thin film transistor, the third insulating film 512, the electrode 513, and the fourth It is possible to prevent the laminate including the insulating film 514 from curling.

When the second substrate is attached to the fourth insulating film 514, a process for reducing the thickness of the first substrate 500 is performed. By this treatment, the thickness of the first substrate 500 is set to 100 μm or less, preferably 20 to 50 μm. Here, as shown in FIG. 19C, the thickness of the first substrate 500 is reduced by using a grinding means or a polishing means 516. At this time, the substrate may be ground only by the grinding means to reduce the thickness of the first substrate 500, or the substrate may be polished only by the polishing means to reduce the thickness of the first substrate 500. However, after the substrate is ground by the grinding means, it is preferable to polish the substrate by the polishing means.

Further, here, grinding means or polishing means is used as means for reducing the thickness of the first substrate 500, but the invention is not limited to this.
As a means for reducing the thickness of the first substrate 500, wet etching may be used.
In this case, if a film having resistance to an etching solution for etching the first substrate 500 is formed between the first substrate 500 and the first insulating film 501, the first insulating film 501 is reached. It will not be etched.

FIG. 20A illustrates a state where the thickness of the first substrate 500 is reduced by performing the process of reducing the thickness of the first substrate 500. Although FIG. 20A shows a state where the first substrate 500 remains, the first substrate 500 may be completely removed or one of the first substrates 500 may be removed. Only the portion may remain on the surface of the first insulating film 501.

As shown in FIG. 20B, the conductive film is formed at a position overlapping the electrode 513 on the surface of the first substrate 500 where the first insulating film 501 is not formed, that is, on the back surface side of the thin film circuit. 517 is formed to a thickness of 1 μm to several tens of μm, preferably 10 to 20 μm. The conductive film 517 may be formed by using, for example, a conductive material such as Au paste, Ag paste, Cu paste, Ni paste, or Al paste, solder, or the like by screen printing. When the film thickness of the conductive film 517 is 0.1 μm or less, the film thickness is too thin and electrical connection with the electrode 513 cannot be achieved in a later process.

Then, the conductive film 517 is irradiated with laser as illustrated in FIG. At this time, the output of the laser is adjusted so that the conductive film 517 is driven to the depth of the electrode 513 and stops at the electrode 513. Here, laser irradiation was performed using a Nd: YVO _4- pulse laser with a wavelength of 266 nm (fourth harmonic), an oscillation frequency of 15 kHz, and an average output of 3 W. This condition is only a representative condition, and is not particularly limited to this condition. By this laser irradiation, the conductive film 517 and the electrode 513 are electrically connected to each other as shown in FIG. In FIG. 21A, reference numeral 518 denotes a conductive film electrically connected to the electrode 513.

As shown in FIG. 21A, a hole is formed in the first substrate 500, the layer 504 including the circuit 503 having a thin film transistor, and the third insulating film 512 at a portion irradiated with the laser, and the sidewall of the hole is formed. The material forming the conductive film 517 moves along the portion to the inside of the electrode 513 and is electrically connected to the electrode 513.

Note that here, an example is shown in which the conductive film 517 is driven to the depth of the electrode 513 and the laser output is adjusted so as to stop at the electrode 513, but the fourth insulating film 514 and the second substrate 515 are penetrated. The laser output may be adjusted so that a hole is formed.

Then, as shown in FIG. 21B, the portion between the circuit 503 having thin film transistors formed adjacent to each other and the circuit 503 having thin film transistors is irradiated with laser, as shown in FIG. The circuit 503 having thin film transistors is divided into three portions 519, 520, and 521 each having one thin film transistor. 519, 520, and 521 after the division are integrated circuit devices, respectively.

Note that although the case where the circuit 503 including three thin film transistors is formed over the substrate is described as an example in this embodiment, the number of the circuits 503 including thin film transistors formed over the substrate is not limited thereto. Absent. Needless to say, the number of circuits 503 having thin film transistors may be one, two, or three or more.

As described above, the integrated circuit device of the present invention is formed.
In the following, a process of forming a semiconductor device by mounting the integrated circuit device of the present invention obtained as described above on a substrate on which an antenna is formed will be described.

As shown in FIG. 22A, a conductive film 523 having a function of an antenna is formed over the substrate 522. An integrated circuit device 526 is bonded to the substrate 522 using a resin 524 including conductive particles 525. By bonding with the resin 524 including the conductive particles 525, the connection portion in the conductive film 523 having the function of the antenna and the connection conductive film on the back surface of the integrated circuit device 526 are interposed through the conductive particles 525. Are electrically connected.

Then, heat treatment is performed to cure the resin 524 including the conductive particles 525. When the second substrate 515 is bonded to the fourth insulating film 514, the second substrate 515 is bonded with an adhesive whose adhesive strength is weakened by application of heat, or a thermal peeling film as the second substrate 515 In this case, the second substrate 515 can be peeled from the fourth insulating film 514 by this heat treatment. FIG. 22B illustrates a state after the second substrate 515 is separated from the fourth insulating film 514.

As described above, the integrated circuit device of the present invention can be mounted on a substrate over which an antenna is formed. Note that here, the case where the conductive film having the function of an antenna is electrically connected to the integrated circuit device using a resin containing conductive particles is described. However, the conductive film having the function of an antenna and the integrated circuit device are described. As means for electrically connecting the two, a known method such as solder may be used in addition to the resin containing conductive particles.

Note that when solder is used as a means for electrically connecting the conductive film having an antenna function and the integrated circuit device, heating is performed to melt the solder. Therefore, when the second substrate 515 is bonded to the fourth insulating film 514, the second substrate 515 is bonded with an adhesive whose adhesive strength is weakened by applying heat, or the second substrate 515 is heated as the second substrate 515. In the case where a release film is used, the second substrate 515 can be peeled from the fourth insulating film 514 by this heating.

It is preferable to perform sealing after the integrated circuit device of the present invention is mounted on a substrate over which an antenna is formed. Sealing may be performed at least on the side where the conductive film 523 having the antenna function is formed on the substrate 522 over which the antenna is formed. FIG. 23A illustrates the case where sealing is performed only on the side where the conductive film 523 having the antenna function of the substrate 522 over which the antenna is formed is formed. When sealing is performed, sealing is performed with a film 529 having a structure having an adhesive layer on the base film. An example of the film 529 is a hot melt film. The hot melt film has a configuration in which an adhesive layer made of a resin having a softening point lower than that of the base film is formed on the base film. Examples of the material used as the base film include polyester, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and the like. Examples of the material used for the adhesive layer include polyethylene resin, polyester, EVA (ethylene vinyl acetate), and the like.

Further, as shown in FIG. 23B, sealing may be performed by two films 527 and 528 from both sides of a substrate 522 on which an antenna is formed. As the films 527 and 528 in FIG. 23B, films having an adhesive layer on a base film may be used.

Note that in FIGS. 22 and 23, the case where the second substrate 515 is peeled off during the heat treatment for sealing is described; however, the second substrate 515 is not peeled off, and the fourth insulating film 514 is peeled off. It is also possible to perform sealing in a state where it is adhered to the top. In that case, an adhesive used when the second substrate 515 is bonded to the fourth insulating film 514 is not particularly limited, and it is not necessary to use an adhesive whose adhesive strength is weakened by heating. Alternatively, a film (such as a hot melt film) other than the heat release film can be used as the second substrate.

In this embodiment, an example in which the integrated circuit device of the present invention is mounted on a substrate on which a plurality of wirings are formed will be described with reference to FIG.

In FIG. 26A, integrated circuit devices 601 to 604 of the present invention are bonded to a substrate 600 provided with a plurality of wirings 605. In each of the integrated circuit devices 601 to 604, a portion surrounded by a dotted line with a rectangle is a connection portion between the thin film circuit and the wiring formed on the substrate 600.

FIG. 26B shows an enlarged view of a cross section of the connection portion 606 which is one of the connection portions. As shown in FIG. 26B, the wiring 607 on the substrate 600 and the connection conductive film on the back surface of the integrated circuit device 604 are bonded to each other with a resin 609 including conductive particles 608. Since the conductive film for connection on the back surface of the integrated circuit device is electrically connected to the circuit of the integrated circuit device, the wiring on the substrate and the circuit of the integrated circuit device can be electrically connected. .

Similarly, in other connection portions, the conductive film for connection on the back surface of each of the integrated circuit devices 601 to 604 and the wiring formed on the substrate are bonded by a resin 609 containing conductive particles 608. .

Each of the integrated circuit devices 601 to 604 includes a central processing unit (CPU), a memory, a network processing circuit, a disk processing circuit, an image processing circuit, a sound processing circuit, a power supply circuit, a temperature sensor, a humidity sensor, and an infrared sensor. It functions as one or more selected from the above.

In this embodiment, an example in which the integrated circuit device of the present invention is applied to a driver circuit portion of a display device will be described with reference to FIG. Note that FIG. 27B is a cross-sectional view taken along line AB in FIG. 27A, and AB in FIG. 27A corresponds to AB in FIG. ing.

Integrated circuit devices 624 and 625 are bonded onto the substrate 620, and integrated circuit devices 628 and 629 are bonded onto the connection films 626 and 627. The display portion 623 and the integrated circuit device 624 are connected to each other through a conductive film 631 over the substrate 620. The integrated circuit device 624 and the integrated circuit device 628 are connected to each other through the conductive film 634 over the substrate 620 and the conductive film 635 over the connection film 627. For the connection of these conductive films, a resin 154 containing conductive particles 155 is used. The substrate 620 and the counter substrate 621 are bonded with a sealant 630.

In this embodiment, an example in which the integrated circuit device of the present invention is mounted on the substrate 620 and the connection films 626 and 627 is shown, but the present invention is not limited to this configuration. The integrated circuit device of the present invention may be mounted as a drive circuit only on the substrate 620, or the integrated circuit device of the present invention may be mounted only on the connection film.

Since the integrated circuit device of the present invention has flexibility, it is suitable for forming on a connection film. When the integrated circuit device of the present invention is used by bending the connection film on the connection film, the integrated circuit device of the present invention can be bent together.

As the substrate 620, a known substrate material such as a glass substrate, a semiconductor substrate, a quartz substrate, or a resin substrate can be used. In particular, in the case of using a flexible substrate, the integrated circuit device of the present invention has flexibility, so that it can be bent together with the substrate. Examples of the flexible substrate include a resin substrate, a glass substrate, and a semiconductor substrate that are thinned by grinding and polishing.

In this embodiment, an IC card having the integrated circuit device of the present invention will be described with reference to FIG.

As shown in FIG. 28A, a conductive film 642 having a function of an antenna is formed over a card-type substrate 640. An integrated circuit device 641 of the present invention is bonded to the card-type substrate 640, and the integrated circuit device 641 and a conductive film 642 having an antenna function are electrically connected. FIG. 28B illustrates an enlarged cross-sectional view of a connection portion 643 between the integrated circuit device 641 and the conductive film 642 having the function of an antenna.

As shown in FIG. 28B, a conductive film 642 having a function of an antenna over a card-type substrate 640 and a connection conductive film on the back surface of the integrated circuit device 641 are formed of a resin 645 including conductive particles 644. It is glued. Since the conductive film for connection on the back surface of the integrated circuit device is electrically connected to a circuit included in the integrated circuit device, the conductive film 642 having the function of an antenna on the card-type substrate 640 and the integrated circuit device 641 are connected. It can be electrically connected to the circuit it has.

As the card-type substrate 640, a flexible substrate (for example, a plastic substrate) is used. Since the integrated circuit device of the present invention has flexibility, when the integrated circuit device of the present invention is mounted on a flexible substrate and used, as shown in FIG. The effect that it can be bent together with the card-type substrate 640 is obtained.

In this embodiment, an example of an IC card having the integrated circuit device of the present invention, which is different from that of Embodiment 3, will be described with reference to FIG.

As shown in FIG. 29A, a conductive film 661 having a function of an antenna is formed over a card-type substrate 660. The integrated circuit devices 662 to 665 of the present invention are bonded to the card-type substrate 660, and the integrated circuit device 664 and the conductive film 661 having an antenna function are electrically connected. FIG. 29B is an enlarged view of a cross section of a connection portion 666 between the integrated circuit device 664 and the conductive film 661 having a function of an antenna.

As shown in FIG. 29B, a conductive film 661 having a function of an antenna over a card-type substrate 660 and a connection conductive film on the back surface of the integrated circuit device 664 are formed of a resin 668 including conductive particles 667. It is glued. Since the conductive film for connection on the back surface of the integrated circuit device 664 is electrically connected to the circuit included in the integrated circuit device 664, the conductive film 661 having the function of an antenna on the card-type substrate 660 and the integrated circuit device are connected. The circuit included in 664 can be electrically connected.

The integrated circuit devices 662 to 665 include a central processing unit (CPU), a central processing unit (CPU), a memory, a network processing circuit, a disk processing circuit, an image processing circuit, an audio processing circuit, a power supply circuit, a temperature sensor, a humidity sensor, an infrared sensor, and the like. Acts as one or more selected.

An IC card including the integrated circuit device of the present invention having the above configuration has a plurality of integrated circuit devices 662 to 665. Accordingly, it is possible to provide an IC card that enables complicated processing such as encryption processing and realizes high functionality.

Note that in FIG. 29A, the way of electrical connection between the integrated circuit devices 662 to 665 is not particularly described, but the adjacent integrated circuit devices are electrically connected to each other. Connected.

In the structure illustrated in FIG. 29A, the conductive film 661 having an antenna function is provided around the integrated circuit devices 662 to 665; however, the present invention is not limited thereto. As shown in FIGS. 29C and 29D, integrated circuit devices 662 to 665 may be provided so as to overlap with the conductive film 661 having a function of an antenna. By providing the integrated circuit devices 662 to 665 so as to overlap with the conductive film 661 having an antenna function, the area of the card-type substrate 660 can be reduced as compared with the case of FIG. A thin and lightweight semiconductor device can be provided. In such a miniaturized wireless chip, for example, by applying a temperature sensor to any one of the integrated circuit devices 662 to 665 and pasting it on the skin of the human body (preferably the skin of the forehead), the temperature can be measured. It can be carried out.

The application of the semiconductor device having the integrated circuit device and the antenna of the present invention is wide-ranging. Specific examples of the application will be described below. The semiconductor device 810 of the present invention includes, for example, banknotes, coins, securities, bearer bonds, certificates (driver's license, resident's card, etc., see FIG. 30A), packaging containers (wrapping paper and bottles) , Etc., see FIG. 30B), recording media (DVD software, video tape, etc., see FIG. 30C), vehicles (bicycles, etc., see FIG. 30D), personal items (such as bags and glasses, (See FIG. 30E), and can be used by being provided in articles such as foods, clothing, daily necessities, and electronic devices. An electronic device refers to a liquid crystal display device, an EL display device, a television device (also simply called a television, or a television receiver or a television receiver), a mobile phone, or the like.

A semiconductor device 810 including an integrated circuit device and an antenna of the present invention is fixed to an article by being pasted or embedded on the surface. For example, a book is embedded in paper, and a package made of an organic resin is embedded in the organic resin, and is fixed to each article. Since the semiconductor device of the present invention is small, thin, and lightweight, the design of the article itself is not impaired even after the semiconductor device is fixed to the article. In addition, by providing the semiconductor device of the present invention in bills, coins, securities, bearer bonds, certificates, etc., an authentication function can be provided, and if this authentication function is utilized, counterfeiting can be prevented. it can. In addition, by providing the semiconductor device of the present invention in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., the efficiency of a system such as an inspection system can be improved.

Next, an example of a system using the semiconductor device of the present invention will be described. First, a reader / writer 895 is provided on the side surface of the portable terminal including the display portion 894, and a semiconductor device 896 including the integrated circuit device of the present invention and an antenna is provided on the side surface of the article 897 (see FIG. 31A). . In addition, the semiconductor device 896 having the integrated circuit device and the antenna of the present invention stores in advance information such as the raw material and origin of the article 897 and a history of distribution process. The semiconductor device 896 having the integrated circuit device and the antenna of the present invention is held over the reader / writer 895, and at the same time, information included in the semiconductor device 896 having the integrated circuit device and the antenna of the present invention is displayed on the display portion 894. By doing so, a system with excellent convenience can be provided. As another example, a reader / writer 895 is provided on the side of the belt conveyor (see FIG. 31B). Then, it is possible to provide a system that can inspect the article 897 very easily. In this manner, by utilizing the semiconductor device of the present invention for an article management or distribution system, the system can be improved in functionality and convenience can be improved.

FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 2. FIG. 7 illustrates Embodiment 3. FIG. 7 illustrates Embodiment 3. FIG. 7 illustrates Embodiment 3. The figure explaining Embodiment 4 The figure explaining Embodiment 4 The figure explaining Embodiment 4 The figure explaining Embodiment 4 FIG. 5 illustrates a fifth embodiment. FIG. 5 illustrates a fifth embodiment. FIG. 5 illustrates a fifth embodiment. FIG. 5 illustrates a fifth embodiment. FIG. 7 illustrates Embodiment 5 FIG. 5 illustrates a fifth embodiment. FIG. 7 illustrates Embodiment 1 FIG. 7 illustrates Embodiment 1 Diagram for explaining the first embodiment Diagram for explaining the second embodiment Diagram for explaining the third embodiment Diagram for explaining the fourth embodiment Diagram for explaining the fifth embodiment Diagram for explaining the fifth embodiment Top view of conductive film before laser irradiation Top view of conductive film after laser irradiation

Explanation of symbols

100 substrate 101 peeling layer 102 first insulating film 103 layer 104 including thin film transistor 104 layer 105 N-channel thin film transistor 106 P-channel thin film transistor 107 island-like semiconductor film 108 gate insulating film 109 gate electrode 110 second Insulating film 111 Source wiring or drain wiring 112 Third insulating film 113 Electrode 114 Resin film 115 Opening 116 Opening 117 First film 118 Laminated body 119 Conductive film 120 Conductive film 121 One portion 122 103 having one conductive film Part 153 having one by one part 154 resin 155 conductive particle 200 substrate 201 peeling layer 202 first insulating film 204 resistor 205 second insulating film 206 opening 207 electrode 208 resin film 209 opening 210 resistance Layer 211 including circuit having layered structure 212 First film 213 Conductive film 214 Conductive film 215 Conductive film 300 Substrate 301 Release layer 302 First insulating film 303 First conductive film 304 Region 305 Region 306 Resin film 307 Opening 308 Inductor Layer 309 including a circuit 309 Laminated body 310 First film 311 Second conductive film 312 Second conductive film 400 Substrate 401 Release layer 402 First insulating film 403 First electrode 404 Second insulating film 405 Second Electrode 406 Resin film 407 Opening 408 Layer 409 including circuit having capacitor Laminated body 410 First film 411 Conductive film 412 Conductive film 413 Conductive film 414 Conductive film 500 First substrate 501 First insulating film 503 Circuit having thin film transistor 504 Layer 505 N-channel containing circuit with thin film transistor Type thin film transistor 506 P-channel type thin film transistor 507 island-like semiconductor film 508 gate insulating film 509 gate electrode 510 having sidewalls formed second insulating film 511 source wiring or drain wiring 512 third insulating film 513 electrode 514 first 4 Insulating film 515 Second substrate 516 Polishing means 517 Conductive film 518 Conductive film 519 103 having one part 520 103 having one part 521 103 having one part 522 Substrate 523 Conductive film 524 having an antenna function Resin 525 Conductive particle 526 Integrated circuit device 527 Film 528 Film 529 Film 600 Substrate 601 Integrated circuit device 602 Integrated circuit device 603 Integrated circuit device 604 Integrated circuit device 605 Wiring 606 Connection portion 607 Wiring 608 Conduction Conductive particles 609 resin 620 substrate 621 counter substrate 623 display unit 624 integrated circuit device 625 integrated circuit device 626 connecting film 627 connecting film 628 integrated circuit device 629 integrated circuit device 630 sealing material 631 conductive film 634 conductive film 635 conductive film 640 card type Substrate 641 Integrated circuit device 642 Conductive film 643 having antenna function Connection portion 644 Conductive particle 645 Resin 660 Card type substrate 661 Conductive film 662 having antenna function Integrated circuit device 663 Integrated circuit device 664 Integrated circuit device 665 Integrated circuit Device 666 Connection portion 667 Conductive particle 668 Resin 722 Substrate 723 Conductive film 724 having function of antenna 724 Resin 725 Conductive particle 726 Integrated circuit device 727 Second film 728 Third film 729 Second film 81 The semiconductor device 894 display unit 895 writer 896 semiconductor device 897 articles

Claims (2)

Forming a release layer on the substrate,
Forming a first insulating film on the release layer;
Forming a layer including a thin film circuit on the first insulating film;
Forming a second insulating film on the layer including the thin film circuit;
Forming a first conductive film on the second insulating film;
By irradiating a first laser to the peeling layer from above the substrate to avoid the thin film circuit, a part of the peeling layer, part of the first insulating layer, a portion of the layer containing the thin-film circuit And removing a portion of the second insulating layer ;
Peeling off the laminate having the first insulating film, the layer including the thin film circuit, the second insulating film, and the first conductive film from the substrate;
A method for manufacturing a semiconductor device, wherein a second conductive film is formed at a position overlapping the first conductive film on a surface peeled from the substrate of the laminate,
The second conductive film is formed with a film thickness of 10 μm to 20 μm,
A method for manufacturing a semiconductor device, wherein the second conductive film is irradiated with a second laser to electrically connect the first conductive film and the second conductive film. Forming a release layer on the substrate,
Forming a first insulating film on the release layer;
Forming a layer including a thin film circuit on the first insulating film;
Forming a second insulating film on the layer including the thin film circuit;
Forming a first conductive film on the second insulating film;
By irradiating a first laser to the peeling layer from above the substrate to avoid the thin film circuit, a part of the peeling layer, part of the first insulating layer, a portion of the layer containing the thin-film circuit And removing a portion of the second insulating layer ;
Peeling off the laminate having the first insulating film, the layer including the thin film circuit, the second insulating film, and the first conductive film from the substrate;
A method for manufacturing a semiconductor device, wherein a second conductive film is formed at a position overlapping the first conductive film on a surface peeled from the substrate of the laminate,
The second conductive film is formed with a film thickness of 10 μm to 20 μm,
By irradiating the second conductive film with a second laser, an opening is formed in the first insulating film, the layer including the thin film circuit, and the second insulating film. A method for manufacturing a semiconductor device, wherein the second conductive film is electrically connected.