JP5197617B2 - パターン指示層を有するドナーフィルム - Google Patents
パターン指示層を有するドナーフィルム Download PDFInfo
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- JP5197617B2 JP5197617B2 JP2009535410A JP2009535410A JP5197617B2 JP 5197617 B2 JP5197617 B2 JP 5197617B2 JP 2009535410 A JP2009535410 A JP 2009535410A JP 2009535410 A JP2009535410 A JP 2009535410A JP 5197617 B2 JP5197617 B2 JP 5197617B2
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- 238000012546 transfer Methods 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 238000000059 patterning Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000001931 thermography Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 191
- 239000010408 film Substances 0.000 description 101
- 239000013545 self-assembled monolayer Substances 0.000 description 40
- 238000003384 imaging method Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 14
- 230000002209 hydrophobic effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229920002959 polymer blend Polymers 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 239000006100 radiation absorber Substances 0.000 description 6
- 239000000975 dye Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000000813 microcontact printing Methods 0.000 description 5
- 238000005191 phase separation Methods 0.000 description 5
- 150000003573 thiols Chemical group 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000013518 transcription Methods 0.000 description 3
- 230000035897 transcription Effects 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001356 alkyl thiols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001746 electroactive polymer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 150000001367 organochlorosilanes Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002256 photodeposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001709 templated self-assembly Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MFISPHKHJHQREG-UHFFFAOYSA-N trichloro(oct-7-enyl)silane Chemical compound Cl[Si](Cl)(Cl)CCCCCCC=C MFISPHKHJHQREG-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical group Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Chemical group 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C8/00—Diffusion transfer processes or agents therefor; Photosensitive materials for such processes
- G03C8/40—Development by heat ; Photo-thermographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
- B41M5/38214—Structural details, e.g. multilayer systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/46—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography characterised by the light-to-heat converting means; characterised by the heat or radiation filtering or absorbing means or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Description
用語「装置」は、それ自体で又は他の部品と共に使用されて、より大きいシステムを形成し得る電子又は光学部品を包含する。
図1は、LITIドナーフィルム10を例示する側面である。図1に示されるように、LITIドナーフィルム10は、典型的には、ドナー基材12、光熱変換(LTHC)層14、及び任意の中間層16、パターン指示層18、及び転写層19を包含する。パターン指示層の例は以下に記載される。図2は、パターン指示層18から結果として生じるパターンを平面図で例示する。パターンは、単に実例を挙げるという目的のために、一群の円として示されるが、パターン指示層は、任意の種類の規則的な又は不規則な配置における、任意の種類の幾何学的図形又は図形類のパターンを包含し得る。用語「パターン指示層」は、別の層をいずれかの種類及び構成のパターンに、パターン付けし得るドナーフィルム中の層を指す。用語「テンプレート層(templated layer)」は、パターン指示層によってパターン付けされた層を指す。パターン指示層は、それ自体は別個の層であってもよく、又はそれは、LTHC若しくは任意の中間層のような別の層と同一の広がりを有していてもよい。
図5aは、基材32、LTHC層34、転写層38、及びSAM領域36のパターンから構成されるパターン指示層を有するLITIドナーフィルム30を例示する図である。図5aに例示されるように、パターニング前の転写層38は、不連続相を有する。図5bは、SAM領域36によりパターン付けされたテンプレート転写層(templated transfer layer)を有し、及び連続相領域37を有するLITIドナーフィルム30を例示する図である。フィルム30では、基材32及びLTHC層34は、上記のような基材12及びLTHC層14に対応してもよく、並びにフィルム30は、LTHC層とパターン指示層との間に中間層16のような中間層を任意に包含し得る。また、フィルム30は、上記の代表的な方法を使用して構築され得る、及び画像化され得る。上記の代表的な画像化方法を使用するフィルム30の永久的レセプターへの画像化の際に、SAM領域の少なくとも幾つかの部分は、レセプターに転写され、転写された部分中のSAM領域のパターンは、転写後にレセプターの上に好ましくは実質的に原型を保って残る。フィルム30のパターン指示層は、SAM領域のいずれかの2次元のパターンを包含することができる。
Claims (2)
- パターン付きレーザー誘起サーマルイメージング(LITI)ドナーフィルムを調製する方法であって、
表面を有する基材と前記基材の表面に適用された光熱変換層とを提供する工程と、
パターン指示層を前記光熱変換層に適用する工程と、を含み、前記パターン指示層が、前記パターン指示層に適用された転写層のパターニングをもたらし、前記転写層の少なくとも一部分が、永久的レセプターに転写することができ、及び前記転写された部分中の転写層のパターンが、前記転写後に、前記レセプター上に実質的に原型を保って残る、方法。 - パターン付きレーザー誘起サーマルイメージング(LITI)ドナーフィルムであって、
表面を有する基材と、
前記基材の表面に適用された光熱変換層と、
前記光熱変換層に適用されたパターン指示層と、を含み、前記パターン指示層が、前記パターン指示層に適用された転写層のパターニングをもたらし、前記転写層の少なくとも一部分が、永久的レセプターに転写することができ、及び前記転写された部分中の転写層のパターンが、前記転写後に、前記レセプター上に実質的に原型を保って残る、パターン付きレーザー誘起サーマルイメージング(LITI)ドナーフィルム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/556,719 | 2006-11-06 | ||
US11/556,719 US7604916B2 (en) | 2006-11-06 | 2006-11-06 | Donor films with pattern-directing layers |
PCT/US2007/082805 WO2008057818A2 (en) | 2006-11-06 | 2007-10-29 | Donor films with pattern-directing layers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010509756A JP2010509756A (ja) | 2010-03-25 |
JP2010509756A5 JP2010509756A5 (ja) | 2010-11-25 |
JP5197617B2 true JP5197617B2 (ja) | 2013-05-15 |
Family
ID=39360103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009535410A Active JP5197617B2 (ja) | 2006-11-06 | 2007-10-29 | パターン指示層を有するドナーフィルム |
Country Status (5)
Country | Link |
---|---|
US (2) | US7604916B2 (ja) |
JP (1) | JP5197617B2 (ja) |
KR (1) | KR101364091B1 (ja) |
TW (1) | TWI432921B (ja) |
WO (1) | WO2008057818A2 (ja) |
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US20080233404A1 (en) * | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
US20100110551A1 (en) * | 2008-10-31 | 2010-05-06 | 3M Innovative Properties Company | Light extraction film with high index backfill layer and passivation layer |
US7957621B2 (en) * | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
JP5300799B2 (ja) | 2010-07-28 | 2013-09-25 | 株式会社東芝 | パターン形成方法及びポリマーアロイ下地材料 |
US8469551B2 (en) * | 2010-10-20 | 2013-06-25 | 3M Innovative Properties Company | Light extraction films for increasing pixelated OLED output with reduced blur |
CN102280368B (zh) * | 2011-05-06 | 2013-11-13 | 中国科学院研究生院 | 图案化紫外屏蔽膜的制备方法 |
KR101872895B1 (ko) * | 2012-03-05 | 2018-06-29 | 동우 화인켐 주식회사 | 흡수형 편광자 및 이의 제조방법 |
US9780335B2 (en) * | 2012-07-20 | 2017-10-03 | 3M Innovative Properties Company | Structured lamination transfer films and methods |
US20140175707A1 (en) | 2012-12-21 | 2014-06-26 | 3M Innovative Properties Company | Methods of using nanostructured transfer tape and articles made therefrom |
US9711744B2 (en) | 2012-12-21 | 2017-07-18 | 3M Innovative Properties Company | Patterned structured transfer tape |
KR20140102518A (ko) | 2013-02-14 | 2014-08-22 | 삼성디스플레이 주식회사 | 도너 필름, 이의 제조 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
KR102350809B1 (ko) * | 2014-01-20 | 2022-01-14 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 요각 구조체를 형성하기 위한 라미네이션 전사 필름 |
US20150202834A1 (en) | 2014-01-20 | 2015-07-23 | 3M Innovative Properties Company | Lamination transfer films for forming antireflective structures |
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