JP5174936B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device that converts input power into predetermined power and outputs the power.

  As a background art related to a power conversion device, for example, an inverter device disclosed in Patent Document 1 is known. Patent Document 1 discloses a technique for reducing the size of an inverter device by stacking and arranging a switching element power module, a smoothing capacitor, and a control unit in a case via a base.

JP 2003-199363 A

  In recent years, there has been a demand for further cost reduction in power conversion devices that are mounted on automobiles and that control the driving of vehicle driving motors. This is to reduce the cost of the electric drive system mounted on the vehicle by reducing the cost of the power conversion device, and to make vehicle drive electrification more popular than ever. As a result, the influence on the global environment can be further reduced and the fuel consumption can be further improved.

  As one of the solutions for reducing the cost of the power conversion device, the power conversion device is attached to the vicinity of the electric motor, for example, the housing of the transmission on which the electric motor is mounted, and the electric power between the power conversion device and the electric motor is electrically connected. It is conceivable to delete the wiring connected to. In order to realize this, for example, the semiconductor chip of the semiconductor module constituting the main circuit for power conversion is downsized to reduce the size of the power converter, and the power converter is installed in the transmission in a limited vehicle space. It needs to be able to be attached to the case.

  However, when the semiconductor chip is downsized, the heat generation of the semiconductor chip increases. Thereby, the heat released from the semiconductor module into the power converter increases, and the internal temperature of the power converter increases. For this reason, in the power converter device which arrange | positions the power converter device component containing a semiconductor module in one case, it is thought that it has a thermal influence on power converter device components other than a semiconductor module. In addition, the background art described above does not take that into consideration. Therefore, in reducing the size of the power conversion device by reducing the size of the semiconductor chip, it is necessary to reduce the thermal influence from the semiconductor module on the power conversion device components other than the semiconductor module.

  Further, the heat generation of the semiconductor chip is also caused by a loss during the semiconductor switching operation. For this reason, the semiconductor chip can be reduced in size by further reducing the loss during the semiconductor switching operation and suppressing the heat generation from the semiconductor chip. In order to further reduce the loss during the switching operation of the semiconductor, it is important to further reduce the inductance in the connection conductor between the capacitor electrically connected to the semiconductor module and the semiconductor module. Therefore, in reducing the size of the power conversion device by downsizing the semiconductor chip, by reducing the loss during semiconductor switching operation and suppressing the heat generation of the semiconductor chip, the power conversion device components other than the semiconductor module can be transferred from the semiconductor module. It is necessary to reduce the heat effect.

  The present invention provides a power conversion device that can reduce the thermal effect of a semiconductor module on components other than the semiconductor module.

  Here, the power conversion device according to the present invention includes a first semiconductor module having a plurality of power semiconductor elements for converting a direct current into an alternating current, and a second semiconductor module having a plurality of power semiconductor elements for converting a direct current into an alternating current. A semiconductor module, a capacitor for smoothing the direct current, a capacitor terminal for transmitting the direct current from the capacitor to the semiconductor module, a flow path through which a cooling refrigerant flows and a flow formed by a heat conductive member A path formation body, wherein the first semiconductor module and the second semiconductor module are disposed on one side of the flow path formation body and arranged side by side through a predetermined space, and the capacitor is disposed in the flow path The flow path forming body is disposed on the opposite side of the semiconductor module with a forming body interposed therebetween, and the flow path forming body includes the first and second semiconductor modules. A through hole connecting the space on the side where the capacitor is disposed and the space on the side where the capacitor is disposed, and the through hole is formed at a position facing the predetermined space, and the direct current of the first semiconductor module The terminal is disposed on the side of the first semiconductor module closest to the through hole, the DC terminal of the second semiconductor module is disposed on the side of the second semiconductor module closest to the through hole, and The capacitor terminal electrically connects the capacitor and the semiconductor module through the through hole.

  According to the present invention, the semiconductor module is accommodated in the cooling chamber whose peripheral wall is formed by the heat conductive member. Therefore, even if the heat radiation from the semiconductor module increases, the heat is released to the outside of the cooling chamber. This can be suppressed, and at least the thermal influence on the capacitor and the control circuit can be kept low. Therefore, according to the present invention, it is possible to reduce the thermal influence from the semiconductor module on the components other than the semiconductor module.

Sectional drawing which shows the structure of the inverter apparatus unit of 1st Example. The upper top view which shows the structure of the inverter apparatus unit of 1st Example. The side view which shows the structure of the inverter apparatus unit of 1st Example. The side view which shows the structure of the inverter apparatus unit of 1st Example. The side view which shows the structure of the inverter apparatus unit of 1st Example. The disassembled perspective view which shows the structure of the inverter apparatus unit of 1st Example. The circuit diagram which shows the electrical circuit structure of the inverter apparatus unit of 1st Example. The block diagram which shows the structure of the drive system of the hybrid electric vehicle to which the inverter apparatus unit of 1st Example is applied. Sectional drawing which shows the structure of the inverter apparatus unit of 2nd Example. Sectional drawing which shows the structure of the inverter apparatus unit of 3rd Example. Sectional drawing which shows the structure of the inverter apparatus unit of 4th Example. The block diagram which shows the structure of the drive system of the hybrid electric vehicle to which the inverter apparatus unit of 4th Example is applied.

  Embodiments of the present invention will be described below with reference to the drawings.

  In the embodiments described below, as an example of a power conversion device to which the present invention is applied, an in-vehicle inverter device with particularly severe thermal cycles and operating environments will be described as an example. The in-vehicle inverter device is provided in the in-vehicle electric system as a control device for controlling the driving of the in-vehicle motor, and is obtained by converting the DC power supplied from the in-vehicle battery constituting the in-vehicle power source into predetermined AC power. By supplying AC power to the in-vehicle motor, the driving of the in-vehicle motor is controlled.

  In addition, the structure demonstrated below is applicable also to DC / DC power converters, such as a DC / DC converter and a DC chopper, or AC-DC power converters. In addition, the configuration described below is used for industrial power conversion devices used as control devices for electric motors that drive factory equipment, or for control of electric motors that are used in household solar power generation systems, or for driving home appliances. The present invention can also be applied to a household power conversion device used in a device. In particular, application to a power conversion device aiming at cost reduction and miniaturization is preferable.

  A first embodiment of the present invention will be described with reference to FIGS.

  First, the hybrid electric vehicle of the present embodiment will be described with reference to FIG.

  The hybrid electric vehicle (hereinafter referred to as “HEV”) of this embodiment is a kind of electric vehicle and includes two drive systems. One of them is an engine system that uses an engine 104 that is an internal combustion engine as a power source. The engine system is mainly used as a drive source for HEV. The other is an in-vehicle electric machine system that uses motor generators 130 and 140 as power sources. The in-vehicle electric system is mainly used as an HEV drive source and an HEV power generation source.

  A front wheel axle 102 is rotatably supported on a front portion of a vehicle body (not shown). A pair of front wheels 101 are provided at both ends of the front wheel axle 102. Although not shown, a rear wheel axle provided with a pair of rear wheels at both ends is rotatably supported at the rear portion of the vehicle body. The HEV of this embodiment employs a so-called front wheel drive system in which the front wheel 101 is a main wheel driven by power, and a rear wheel (not shown) is a driven wheel that is rotated. A wheel drive system may be adopted.

  A front wheel differential gear (hereinafter referred to as “front wheel DEF”) 103 is provided at the center of the front wheel axle 103. The front wheel axle 103 is mechanically connected to the output side of the front wheel side DEF 103. The output shaft of the transmission 105 is mechanically connected to the input side of the front wheel side DEF103. The front wheel side DEF 103 is a differential power distribution mechanism that distributes the rotational driving force that is transmitted and transmitted by the transmission 105 to the left and right front wheel axles 102. The output side of the motor generator 130 is mechanically connected to the input side of the transmission 105. The output side of the engine 104 and the output side of the motor generator 140 are mechanically connected to the input side of the motor generator 130 via the power distribution mechanism 150.

  Motor generators 130 and 140 and power distribution mechanism 150 are housed inside the housing of transmission 150.

  The power distribution mechanism 150 is a differential mechanism composed of gears 151 to 158. Here, the gears 153 to 156 are bevel gears. The gears 151, 152, 157, 158 are spur gears. The power of motor generator 130 is directly transmitted to transmission 150. The shaft of the motor generator 130 is coaxial with the gear 157. As a result, when no drive power is supplied to motor generator 130, the power transmitted to gear 157 is transmitted to the input side of transmission 150 as it is. When the gear 151 is driven by the operation of the engine 104, the power of the engine 104 is transferred from the gear 151 to the gear 152, then from the gear 152 to the gear 154 and the gear 156, and then from the gear 154 and the gear 156 to the gear 158. Each is transmitted and finally transmitted to the gear 157. When the gear 153 is driven by the operation of the motor generator 140, the rotation of the motor generator 140 is transmitted from the gear 153 to the gear 154 and the gear 156, and then from the gear 154 and the gear 156 to the gear 158, and finally. Is transmitted to the gear 157.

  As the power distribution mechanism 150, another mechanism such as a planetary gear mechanism may be used.

  The motor generator 130 is a synchronous machine having a rotor with a permanent magnet for a field, and the drive is controlled by the AC power supplied to the armature coil of the stator being controlled by the inverter device 110. The motor generator 140 is a synchronous machine similar to the motor generator 130, and its drive is controlled by the inverter device 120. A battery 106 is electrically connected to the inverter devices 110 and 120, and power can be supplied from the battery 106 to the inverter devices 110 and 120, and power can be supplied from the inverter devices 110 and 120 to the battery 106.

  In the present embodiment, the first motor generator unit composed of the motor generator 130 and the inverter device 110 and the second motor generator unit composed of the motor generator 140 and the inverter device 120 are provided, and they are selectively used according to the operating state. ing. That is, in the case where the vehicle is driven by the power from the engine 104, when assisting the driving torque of the vehicle, the second motor generator unit is operated by the power of the engine 104 as a power generation unit to generate power, and is obtained by the power generation. The first motor generator unit is operated as an electric unit by the generated electric power. In the same case, when assisting the vehicle speed of the vehicle, the first motor generator unit is operated by the power of the engine 104 as a power generation unit to generate electric power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  In this embodiment, the first motor generator unit is operated as an electric unit by the electric power of the battery 106, so that the vehicle can be driven only by the power of the motor generator 130.

  Further, in this embodiment, the battery 106 can be charged by generating power by operating the first motor generator unit or the second motor generator unit as the power generation unit by the power of the engine 104 or the power from the wheels.

  Next, the electrical circuit configuration of the inverter devices 110 and 120 of this embodiment will be described with reference to FIG.

  The inverter devices 110 and 120 of this embodiment are configured as one inverter device unit in a united form. The inverter device unit includes the semiconductor module 20 of the inverter device 110, the semiconductor module 30 of the inverter device 120, the capacitor 50, the drive circuit 92 mounted on the drive circuit board 70 of the inverter device 110, and the drive of the inverter device 120. A drive circuit 94 mounted on the circuit board 71, a control circuit mounted on the control circuit board 74, a drive circuit 91 for driving a connector 73 and a discharge circuit (not shown) of the capacitor 50 mounted on the connector board 72, and Current sensors 95 and 96 are provided.

  In this embodiment, the power supply system is indicated by a solid line and the signal system is indicated by a dotted line so that the power supply system and the signal system can be easily distinguished.

  The semiconductor modules 20 and 30 constitute a power conversion main circuit of the corresponding inverter devices 110 and 120, and include a plurality of switching power semiconductor elements. The semiconductor modules 20 and 30 operate in response to the drive signals output from the corresponding drive circuits 92 and 94, convert the DC power supplied from the high voltage battery HBA into three-phase AC power, and convert the power to the corresponding motor. This is supplied to the armature windings of the generators 130 and 140. The main circuit is a three-phase bridge circuit, and a series circuit for three phases is configured to be electrically connected in parallel between the positive electrode side and the negative electrode side of the battery 106.

  The series circuit is also referred to as an arm, and is configured by electrically connecting an upper arm side switching power semiconductor element and a lower arm side switching power semiconductor element in series. In this embodiment, an IGBT (insulated gate bipolar transistor) 21 is used as a power semiconductor element for switching. The IGBT 21 includes three electrodes, a collector electrode, an emitter electrode, and a gate electrode. A diode 38 is electrically connected between the collector electrode and the emitter electrode of the IGBT 21. The diode 38 includes two electrodes, a cathode electrode and an anode electrode. The cathode electrode is the collector electrode of the IGBT 21 and the anode electrode is the IGBT 21 so that the direction from the emitter electrode to the collector electrode of the IGBT 21 is the forward direction. Each is electrically connected to the emitter electrode.

  A MOSFET (metal oxide semiconductor field effect transistor) may be used as the power semiconductor element for switching. The MOSFET includes three electrodes, a drain electrode, a source electrode, and a gate electrode. Note that the MOSFET includes a parasitic diode between the source electrode and the drain electrode in which the direction from the drain electrode to the source electrode is a forward direction, so that it is not necessary to provide a separate diode unlike the IGBT.

  The arm of each phase is configured by electrically connecting the source electrode of the IGBT 21 and the drain electrode of the IGBT 21 in series. In the present embodiment, only one IGBT of each upper and lower arm of each phase is illustrated, but a plurality of IGBTs may be configured to be electrically connected in parallel. In the present embodiment, as will be described later, each upper and lower arm of each phase is constituted by three IGBTs.

  The drain electrode of the IGBT 21 of each upper arm of each phase is electrically connected to the positive electrode side of the battery 106, and the source electrode of the IGBT 21 of each lower arm of each phase is electrically connected to the negative electrode side of the battery 106. The midpoint of each arm of each phase (the connection portion between the source electrode of the upper arm side IGBT and the drain electrode of the lower arm IGBT) is electrically connected to the armature winding of the corresponding phase of the corresponding motor generator 130, 140. Connected.

  The drive circuits 92 and 94 constitute the drive units of the corresponding inverter devices 110 and 120, and generate drive signals for driving the IGBT 21 based on the control signals (control values) output from the control circuit 93. To do. The drive signal generated in each circuit is output to the corresponding semiconductor modules 20 and 30. The drive circuits 92 and 94 are constituted by so-called 6-in-1 type integrated circuits in which a plurality of circuits corresponding to the upper and lower arms of each phase are integrated into one circuit. As a circuit corresponding to each upper and lower arm of each phase, an interface circuit, a gate circuit, an abnormality detection circuit, and the like are provided.

  The control circuit 93 constitutes a control unit of the inverter devices 110 and 120, and is constituted by a microcomputer that calculates a control signal (control value) for operating (turning on / off) a plurality of switching power semiconductor elements. Yes. The control circuit 93 receives a torque command signal (torque command value) from the host controller, and detection signals (sensor values) from the rotation sensors mounted on the current sensors 95 and 96 and the motor generators 130 and 140. . The control circuit 93 calculates a control signal (control value) based on these input signals and outputs it to the drive circuits 92 and 94.

  The connector 73 is for electrically connecting the inside of the inverter devices 110 and 120 and an external control device.

  The capacitor 50 is for constituting a smoothing circuit for suppressing fluctuations in DC voltage caused by the operation of the IGBT 21, and is electrically connected in parallel to the DC side of the semiconductor modules 20 and 30.

  The drive circuit 91 is for driving a discharge circuit (not shown) provided for discharging the electric charge accumulated in the capacitor 50.

  Next, the actual configuration of the above-described inverter devices 110 and 120 will be described with reference to FIGS.

  The inverter device unit of this embodiment is formed by stacking the second base 12 on the lower case 13, the first base 11 on the second base, and the upper case 10 on the first base 11. The housing (inverter case) is provided. The casing is a rounded rectangular parallelepiped container. All the components of the housing are made of a heat conductive member made of aluminum.

  The interior of the housing is separated into two in the vertical direction by a plate-like first base 11 and a pi (π) -shaped second base 12, and the entire circumference (peripheral wall, ceiling wall) by a heat conductive member , Bottom wall) are formed in the two cooling chambers. Two refrigerant flow paths 28 for flowing refrigerant (cooling water) are formed in the first base 11 and the second base 12 that form the boundary walls of the two cooling chambers. By configuring the housing as described above, the two cooling chambers are thermally separated, and the thermal influence from one cooling chamber to the other cooling chamber can be suppressed.

  In the cooling chamber at the top of the housing, the semiconductor modules 20 and 30 having a size that is long in the longitudinal direction of the housing and short in the lateral direction are juxtaposed in the lateral direction of the housing, and the refrigerant flow path 28. It is stored so that it may be arrange | positioned at the upper part of. Thereby, the semiconductor modules 20 and 30 are thermally connected to the refrigerant flow path 28, and the heat generated by the operation of the IGBT 21 is cooled by the refrigerant. Therefore, it is possible to suppress the influence of the heat released from the semiconductor modules 20 and 30 on the lower cooling chamber.

  An inlet pipe 15 that communicates with one side of the refrigerant flow path 28 and an outlet pipe 16 that communicates with the other side of the refrigerant flow path 28 are provided on one side end face in the longitudinal direction of the casing. Each of the refrigerant channels 28 extends in parallel from one side in the longitudinal direction of the housing toward the other side, and communicates with each other at the other end in the longitudinal direction of the housing. That is, the refrigerant flow path 28 is formed in a U shape.

  A heat transfer plate 28 is provided at each of the portions of the first base 11 where the refrigerant flow paths 28 are formed. The heat transfer plate 28 is a rectangular member that extends from one side of the casing in the longitudinal direction toward the other side along the refrigerant flow path 28, and is a plate-like member that forms one surface of the refrigerant flow path 28. Thereby, the heat transfer plate 23 is directly cooled by the refrigerant flowing through the refrigerant flow path 28. The heat transfer plate 23 is made of a heat conductive member made of aluminum or copper, and cooling fins (not shown) protruding inside the refrigerant flow path 28 are provided on the surface on the refrigerant flow path 28 side. Thereby, the cooling area by a refrigerant | coolant increases and the cooling effect by a refrigerant | coolant can be improved.

  A module case 24 is provided on each upper surface of the heat transfer plate 23 so as to stand along the outer peripheral edge of the heat transfer plate 23. The module case 24 divides the region on the upper surface of the heat transfer plate 23 into three regions in the longitudinal direction of the housing to form a storage chamber for storing the IGBT 21 and the diode 38 for each phase.

  A DC positive-side module terminal 26 and a DC negative-side module terminal 33 are provided corresponding to each storage chamber on the side wall extending in the longitudinal direction of the module case 24 and located on the opposite side of the semiconductor modules 20 and 30. ing. The direct current positive side module terminal 33 and the direct current negative side module terminal 26 protrude upward from the side wall of the module case 24. The side opposite to the protruding side of the DC positive side module terminal 33 and the DC negative side module terminal 26 reaches the inside of the storage chamber, and the surface thereof is exposed on the surface of the module case 24. As a result, a DC positive module electrode 36 and a DC negative module electrode 37 are formed inside each storage chamber.

  An AC module terminal 27 is provided corresponding to each storage chamber on the side wall extending in the longitudinal direction of the module case 24 and located on the side opposite to the opposite side of the semiconductor modules 20 and 30. The AC module terminal 27 protrudes upward from the side wall of the module case 24. The side opposite to the protruding side of the AC module terminal 27 reaches the inside of the storage chamber, and the surface thereof is exposed on the surface of the module case 24. Thereby, the AC module electrode 35 is formed inside each storage chamber.

  Two insulating substrates 22 are juxtaposed in the longitudinal direction of the casing on the upper surface of the heat transfer plate 23 of each storage chamber. Two plate-like wiring members 39 are arranged on the upper surface of each insulating substrate 22 in the longitudinal direction of the housing. One side of the wiring member 39 provided on one side of the two insulating substrates 22 in each storage chamber is electrically connected to the DC positive side module electrode 36. One side of the wiring member 39 provided on the other side of the two insulating substrates 22 in each storage chamber is electrically connected to the DC negative electrode module electrode 37. The other side of the wiring member 39 provided on the two insulating substrates 22 in each storage chamber is electrically connected to the AC module electrode 35. These electrical connections are made by a conductive wire 29.

  Three IGBTs 21 and diodes 38 arranged in the longitudinal direction of the casing are arranged in parallel in the lateral direction of the casing on the upper surface on one side of the wiring member 39 provided on the two insulating substrates 22 of each storage chamber. Has been implemented. Thereby, the upper and lower arms of each phase are configured. The IGBT 21 and the diode 38 are electrically connected to a wiring member 39 that is electrically connected to the AC module electrode 35. The gate electrode of the IGBT 21 is electrically connected to the connector 25. These electrical connections are made by a conductive wire 29. The connector 25 is provided on each of four side walls forming three regions on the upper surface of the heat transfer plate 23 of the module case 24.

  A plate-like module case lid 34 is provided on the upper part of the module case 24. The module case lid 34 forms a ceiling wall that covers the upper opening of the module case 24 and closes the storage chamber, and is formed from the same insulating resin as the module case 24. On the upper surface of the module case lid 34, a wiring sheet 31 and a wiring connector 32 electrically connected to the wiring seed 31 are provided. The wiring sheet 31 is electrically connected to the connector 25 protruding upward from the through hole provided in the module case lid 34. The wiring connector 32 is electrically connected to the drive circuits 92 and 94 of the drive circuit boards 70 and 71 by wires not shown.

  A capacitor 50, drive circuit boards 70 and 71, a control board 74, and a connector board 72 are housed in a cooling chamber at the bottom of the housing.

  The capacitor 50 is disposed below the center of the second base 12 (a region surrounded by two legs of π) so as to be disposed close to the DC side of the semiconductor modules 20 and 30. The capacitor 50 is composed of four electrolytic capacitors whose cross-sectional shape in the height direction of the housing has an oval shape. The four electrolytic capacitors are arranged side by side in the longitudinal direction and the short direction of the casing so that the longitudinal direction thereof is the same as the longitudinal direction of the casing, and the inside of the capacitor case 51 is interposed via the holding band 52. It is stored in. The capacitor case 51 is a thermally conductive container having an open top, and the flange portion at the top of the case is in contact with the lower ends of the two legs π of the second base 12. Thereby, the capacitor | condenser 50 and the refrigerant | coolant flow path 28 can be connected thermally, and the capacitor | condenser 50 can be cooled with a refrigerant | coolant.

  Each electrolytic capacitor includes a positive-side capacitor terminal 57 and a negative-side capacitor terminal 56 that pass through a capacitor lid 54 that closes the upper opening of the capacitor case 53. The positive-side capacitor terminal 57 and the negative-side capacitor terminal 56 are plate-shaped, facing each other so as to face the short direction, and the plate-shaped insulating member 55 formed integrally with the capacitor lid 54 is disposed in the short direction. Is sandwiched between. The capacitor terminals are provided such that when four electrolytic capacitors are accommodated in the capacitor case 53, the positions in the longitudinal direction of those adjacent in the lateral direction are different.

  The drive circuit board 70 is disposed on the lower side of the second base 12 on the semiconductor module 20 side and in a region surrounded by one of the legs of π and the flange portion of the second base 12. The drive circuit board 71 is disposed below the second base 12 on the semiconductor module 30 side and in a region surrounded by the other leg of π and the flange portion of the second base 12. The drive circuit boards 70 and 71 are thermally connected to the second base 12. Thereby, the refrigerant flow path 28 and the drive circuit boards 70 and 71 can be thermally connected, and the drive circuit boards 70 and 71 can be cooled by the refrigerant.

  The control circuit board 74 is provided so as to face the side surface on one side (semiconductor module 30 side) of the capacitor case 53 in the short direction. The control circuit board 74 is thermally connected to the second base 12. Thereby, the refrigerant flow path 28 and the control circuit board 74 can be thermally connected, and the control circuit board 74 can be cooled by the refrigerant.

  The connector substrate 72 is provided so as to face the side surface of the other side (semiconductor module 20 side) of the capacitor case 53 in the short direction. The connector board 72 is thermally connected to the second base 12. Thereby, the refrigerant | coolant flow path 28 and the connector board | substrate 72 can be thermally connected, and the connector board | substrate 72 can be cooled with a refrigerant | coolant. The connector 73 protrudes to the outside from the side end surface on the other side in the longitudinal direction of the housing.

  The capacitor 50 and the semiconductor modules 20 and 30 are electrically connected by the DC side connection conductor 40. The DC side connection conductor 40 is a long hole (a hole long in the longitudinal direction of the housing) provided in the central portion of the first base 11 and the central portion of the second base, and penetrates in the height direction of the housing. It extends to the upper and lower cooling chambers through the holes.

  The DC-side connection conductor 40 includes a plate-like DC positive electrode-side bus bar 45 extending in the longitudinal direction of the housing and a plate-like DC negative electrode-side bus bar 44 extending in the longitudinal direction of the housing via an insulating sheet 43. The DC positive side module terminal 42 and the positive side capacitor terminal 46 are integrally formed on the DC positive side bus bar 45, and the DC negative side module terminal 41 and the negative side capacitor terminal 47 are connected to the DC negative side. The wiring member has a laminate structure formed integrally with the bus bar 44. According to such a structure, the inductance between the semiconductor modules 20 and 30 and the capacitor 50 can be reduced, and heat generation due to loss during the switching operation of the IGBT 21 can be suppressed.

  The DC positive-side module terminal 42 extends upward from the upper part of the DC positive-side bus bar 45 at a position where the DC positive-side module terminal 33 protrudes upward from the module case 24 so as to face the short direction of the casing. The DC positive module terminal 33 is electrically connected to the DC positive module terminal 33 by being fixed to the DC positive module terminal 33 by a fixing means such as a screw. The DC negative-side module terminal 41 extends upward from the upper part of the DC negative-side bus bar 44 at a position where the DC negative-side module terminal 26 protrudes upward from the module case 24 so as to face the short side of the housing. The DC negative side module terminal 26 is electrically connected to the DC negative side module terminal 26 by being fixed to the DC negative side module terminal 26 by a fixing means such as a screw.

  The positive electrode side capacitor terminal 46 and the negative electrode side capacitor terminal 47 extend downward from the lower portions of the DC positive electrode side bus bar 45 and the DC negative electrode side bus bar 44 at the position where the capacitor terminal protrudes, and face the short side of the casing. The terminal is sandwiched from the short side of the case and fixed to the capacitor terminal of the same polarity opposite to the capacitor terminal of the same polarity by fixing means such as screws, so that it is electrically connected to the capacitor terminal of the same polarity. Yes. According to such a wiring structure, the wiring portions extending from the DC positive electrode side bus bar 45 and the DC negative electrode side bus bar 44 to the respective capacitor terminals can also be opposed to the positive electrode side and the negative electrode side, thereby further reducing the inductance. A member is obtained, and heat generation due to loss during the switching operation of the IGBT 21 can be further suppressed.

  A DC terminal 80 is provided at the other end portion in the longitudinal direction of the housing. The DC terminal 80 includes a DC positive external terminal 82, a DC negative external terminal 81, a DC positive connection terminal 86, a DC negative connection terminal 85, a DC positive external terminal 82, and a DC positive connection terminal 86. Are connected to the DC positive electrode side bus bar 84, and the DC negative electrode side external terminal 81 and the DC negative electrode side connection terminal 85 are connected to the DC negative electrode side bus bar 83.

  The DC positive electrode external terminal 82 and the DC negative electrode external terminal 81 are electrically connected to an external cable extending through a connector attached to a through hole 17 provided on the other side end surface in the longitudinal direction of the housing. The The direct current positive electrode side bus bar 84 and the direct current negative electrode side bus bar 83 extend toward the semiconductor modules 20 and 30 so as to face each other in the short direction of the housing. The DC positive side connection terminal 86 is electrically connected to the DC positive side module terminals 33 and 42, and the DC negative side connection terminal 85 is electrically connected to the DC negative side module terminals 26 and 41.

  The hole 18 provided in the upper surface of the upper case 10 is used for connecting the DC positive external terminal 82 and the DC negative external terminal 81 and the external cable, and is closed with a lid except during the operation. Yes.

  AC bus bars 60 for three phases are arranged at both ends in the short direction inside the housing. The AC bus bar 60 is connected to the upper part from the lower cooling chamber through a through-hole in the vertical direction (the height direction of the casing) provided at the end in the short direction of the casing of the first base 11 and the second base 12. Extends into the cooling chamber. An AC side module terminal 61 is formed on one end side of the AC bus bar 60 in the upper cooling chamber. The AC side module terminal 61 faces the AC side module terminal 27 so as to face the short side of the casing. It is electrically connected to the AC side module terminal 27 by being fixed by fixing means such as a screw. On the other end side of the AC bus bar 60 in the lower cooling chamber, an external connection terminal 62 with an external cable reaching the motor generators 130 and 140 is formed and held by a terminal holder 63.

  Reference numeral 14 denotes an attachment foot for fixing the casing of the inverter unit unit to the casing of the transmission 105 or the casing of the engine 104 and the transmission 105, and a rigid body such as SUS is used to secure the strength. doing. The bend shape is made elastic so as to suppress vibrations from the transmission 15 and the engine 104.

  In the present embodiment described above, the cooling chamber surrounded by the heat conductive member is formed in the casing of the inverter unit, and the semiconductor modules 20 and 30 are accommodated in the chamber. Even if the heat generation of the IGBT 21 increases due to the miniaturization of the IGBT 21 or the heat dissipation from the semiconductor modules 20 and 30 increases, the heat can be prevented from being released to the outside of the cooling chamber. The thermal effect on the components of the inverter device can be kept low.

  A second embodiment of the present invention will be described with reference to FIG.

  The present embodiment is an improved example of the first embodiment, and the same components are denoted by the same reference numerals and the description thereof is omitted.

  The difference between the present embodiment and the first embodiment is that a third cooling chamber whose entire circumference is surrounded by the upper case 10 and the second upper case 19 at the upper portion of the cooling chamber in which the semiconductor modules 20 and 30 are accommodated. It is formed and a board 97 in which a drive circuit board, a control circuit board, and a connector board are combined is housed therein.

  The wiring sheet 31 and the substrate 97 of the semiconductor modules 20 and 30 are electrically connected by a wiring member 98.

  The capacitor case of the capacitor 50 is omitted, and the π foot of the second base 12 takes its place. For this reason, the π legs of the second base 12 are formed to extend to the bottom of the lower case 13.

  Further, the mounting foot 14 has a hollow structure, and a power cable 64 electrically connected to the AC external terminal 62 is passed through the mounting foot 14 so as to be guided into the housing of the transmission 105. By doing so, it is possible to easily guide the power cable 64 into the housing of the transmission 105 and connect the power cable 64 to the motor generators 130 and 140.

  Also in the present embodiment, as in the previous example, even if heat generation of the IGBT 21 increases due to downsizing of the IGBT 21 or heat dissipation from the semiconductor modules 20 and 30 increases, the heat is released to the outside of the cooling chamber. And the thermal influence on the components of other inverter devices such as the capacitor 50 can be kept low.

  A third embodiment of the present invention will be described with reference to FIG.

  The present embodiment is an improved example of the first embodiment, and the same components are denoted by the same reference numerals and the description thereof is omitted.

  The difference between this embodiment and the first embodiment is that the drive circuit boards 70, 71, the AC bus bar 60, and the terminal holder 63 are housed together in a cooling chamber in which the semiconductor modules 20, 30 are housed. Yes.

  Further, a second cooling chamber is formed by the second base 12 below the cooling chamber in which the semiconductor modules 20 and 30 are housed, and two third cooling chambers are formed by the second base 12 below the second cooling chamber. The capacitor 50 is stored in the second cooling chamber, the control circuit board 74 is stored in one of the third cooling chambers, and the connector board 72 is stored in the other of the third cooling chambers. The capacitor 50 is horizontally placed and stored in two in the short direction of the housing. As a result, the DC side connection conductor 40 is also divided into the semiconductor module 20 side and the semiconductor module 30 side. The configuration of the DC side connection conductor 40 is the same as that of the first embodiment, but the way of bending each terminal is partially changed. Further, the DC side connecting conductor 40 is integrally formed with a DC positive side external terminal 82 and a DC negative side external terminal 81.

  Reference numeral 99 denotes a connector wiring that electrically connects the drive circuit boards 70 and 71 and the wiring sheet 31.

  Also in the present embodiment, as in the previous example, even if heat generation of the IGBT 21 increases due to downsizing of the IGBT 21 or heat dissipation from the semiconductor modules 20 and 30 increases, the heat is released to the outside of the cooling chamber. And the thermal influence on the components of other inverter devices such as the capacitor 50 can be kept low.

  A fourth embodiment of the present invention will be described with reference to FIGS.

  The present embodiment is a modification of the first embodiment, and the same components are denoted by the same reference numerals and description thereof is omitted.

  The difference between this embodiment and the third embodiment is that the rear wheel 201 is also driven by the motor generator 160. For this reason, in this embodiment, one unit of the inverter device 150 is provided. The power of the motor generator 160 is decelerated by the speed reducer 204 and transmitted to the rear wheel side differential gear 203, and is transmitted from the rear wheel side differential gear 203 to the rear wheel axle 202. That is, in this embodiment, a four-wheel drive hybrid vehicle is configured. The inverter device 150 is connected to the battery 106. When motor generator 160 is used as an electric motor, electric power is supplied from battery 106 to inverter device 150, and when used as a generator, electric power is supplied from inverter device 150 to battery 106.

  The configuration of the inverter device 150 is the same as the configuration of the left half side obtained by cutting the inverter device unit of the third embodiment at the center in the short direction of the housing, and like the inverter device unit of the second embodiment. The third cooling chamber is formed in the upper part of the cooling chamber in which the conductor module 30 is accommodated, and the substrate 97 including the drive circuit board, the control circuit board, and the connector board is accommodated therein.

  Further, the power cable 64 is guided into the housing of the transmission 105 through the mounting foot 14 having a hollow structure like the inverter device unit of the second embodiment.

  Further, as the configuration of the inverter device 150, the configuration on the left half side or the right half side obtained by cutting the inverter device unit of the first to third embodiments at the center in the short side direction of the housing may be used as it is. .

  Also in the present embodiment, as in the previous example, even if heat generation of the IGBT 21 increases due to downsizing of the IGBT 21 or heat dissipation from the semiconductor modules 20 and 30 increases, the heat is released to the outside of the cooling chamber. And the thermal influence on the components of other inverter devices such as the capacitor 50 can be kept low.

  20, 30 ... Semiconductor module, 50 ... Capacitor, 70, 71 ... Drive circuit board, 74 ... Control circuit board, 110, 120, 160 ... Inverter device.

Claims (7)

A first semiconductor module having a plurality of power semiconductor elements for converting a direct current into an alternating current;
A second semiconductor module having a plurality of power semiconductor elements for converting a direct current into an alternating current;
A capacitor for smoothing the direct current;
A capacitor terminal for transmitting the direct current from the capacitor to the semiconductor module;
Forming a flow path through which the cooling refrigerant flows, and a flow path forming body formed by a heat conductive member,
The first semiconductor module and the second semiconductor module are arranged on one side of the flow path forming body and arranged side by side through a predetermined space,
The capacitor is disposed on the opposite side of the semiconductor module via the flow path forming body,
The flow path forming body forms a through hole that connects a space on the side where the first and second semiconductor modules are disposed and a space on the side where the capacitor is disposed, and the through hole further includes the predetermined space. Is formed at a position opposite to
The DC terminal of the first semiconductor module is disposed on the side of the first semiconductor module closest to the through hole,
The DC terminal of the second semiconductor module is disposed on the side of the second semiconductor module closest to the through hole,
The capacitor terminal is a power converter that electrically connects the capacitor and the semiconductor module through the through hole. The power conversion device according to claim 1,
The flow path forming body forms a first opening and a second opening connected to the flow path on a side where the first and second semiconductor modules are disposed,
The first semiconductor module has a first metal base plate for mounting the power semiconductor element via an insulating member,
The second semiconductor module has a second metal base plate for mounting the power semiconductor element via an insulating member,
The first metal base plate is in direct contact with the cooling refrigerant by closing the first opening;
The power conversion device in which the second metal base plate is in direct contact with the cooling refrigerant by closing the second opening. The power conversion device according to claim 1 or 2,
The power conversion device, wherein the capacitor is disposed on the other side of the flow path forming body in a state of being in contact with the flow path forming body. The power conversion device according to any one of claims 1 to 3,
The capacitor terminal includes a plate-shaped positive-side capacitor terminal, a plate-shaped negative-side capacitor terminal facing the positive-side capacitor terminal, and an insulating member disposed between the positive-side capacitor terminal and the negative-side capacitor terminal. And a power conversion device configured by. The power conversion device according to claim 4,
The first and second semiconductor modules each have a plate-like positive-side module terminal and a plate-like negative-side module terminal,
The positive-side capacitor terminal and the negative-side capacitor terminal protrude from the through hole to a space where the semiconductor module is disposed,
The positive module terminal is formed along the protruding direction of the positive capacitor terminal and connected to the positive capacitor terminal;
The negative electrode module terminal is formed along the protruding direction of the negative capacitor terminal and connected to the negative capacitor terminal. The power conversion device according to any one of claims 1 to 5,
A housing space for housing the first and second semiconductor modules and a case for forming an opening;
An opening of the case is a power conversion device that is closed by the flow path forming body. The power conversion device according to claim 6,
A control circuit board on which a control circuit for controlling driving of the power semiconductor element is mounted;
The said control circuit board is a power converter device arrange | positioned outside the storage space of the said case.

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