JP5172738B2 - Semiconductor module and electronic device using the same - Google Patents

Description

  The present invention relates to a semiconductor module and an electronic device using the same, and in particular, when various power modules and electronic devices are configured using a silicon nitride ceramic substrate, the generation of leakage current can be effectively suppressed. The present invention relates to a semiconductor module capable of significantly improving insulation and operation reliability even in a power module with increased power and increased capacity, and an electronic apparatus using the semiconductor module.

  Ceramic sintered bodies mainly composed of silicon nitride have excellent heat resistance even in a high temperature environment of 1000 ° C. or higher, and have various characteristics such as excellent thermal shock resistance due to a low thermal expansion coefficient. Therefore, application to various high-strength heat-resistant parts such as gas turbine parts, engine parts, and steelmaking machine parts has been attempted as a high-temperature structural material replacing conventional heat-resistant superalloys. In addition, because it has excellent corrosion resistance to metals, it has been tried to apply molten metal as a material that resists melting, and since it has excellent wear resistance, it can be put to practical use in sliding members such as bearings and cutting tools. ing.

  Conventionally, the sintered composition of sintered silicon nitride ceramics is silicon nitride-yttrium oxide-aluminum oxide system, silicon nitride-yttrium oxide-aluminum oxide-aluminum nitride system, silicon nitride-yttrium oxide-aluminum oxide- Titanium, magnesium or zirconium oxides are known.

Oxides of rare earth elements such as yttrium oxide (Y ₂ O ₃ ) in the above-mentioned sintered composition have been conventionally used as sintering aids, increasing the sinterability and densifying the sintered body to increase its strength. It has been added to achieve this.

  A conventional silicon nitride sintered body is obtained by press-molding a raw material mixture obtained by adding the above-mentioned sintering aid as an additive to silicon nitride powder with an applied pressure of 80 to 100 MPa, an extrusion molding method or a doctor blade. The molded body obtained by molding is mass-produced by a manufacturing method in which the resulting molded body is fired for a predetermined time in a high-temperature firing furnace of about 1600 to 1900 ° C. and then the furnace is naturally cooled.

JP-A-9-69672 Japanese Patent Laid-Open No. 9-30866 JP-A-9-183666 JP 2000-128643 A

  However, when the silicon nitride sintered body manufactured by the above-described conventional manufacturing method is used as a ceramic substrate, and various power modules are formed by bonding a metal circuit board and mounting a semiconductor element on the ceramic substrate surface, It has been difficult to obtain a highly reliable power module because the ceramic substrate has low insulation and large dielectric loss. This tendency has become more prominent with the recent progress of higher output and higher integration of semiconductor devices.

  Specifically, when various power modules for high power and large capacity are formed using the above silicon nitride ceramic substrate, the insulation between the front and back surfaces of the ceramic substrate is lowered and leak current is likely to occur. . When the leakage current value exceeds a predetermined value, the current flowing through the metal circuit board passes through the ceramic substrate and leaks (leaks) to other metal circuits. Therefore, although it is not electrically connected, leakage current (leakage current) flows to other metal circuit boards, which may cause malfunction of semiconductor elements or damage components of various power modules. There has been a problem in that an adverse effect occurs.

  In addition, although the silicon nitride sintered body manufactured by the above-described conventional method has excellent mechanical strength such as toughness value, in terms of thermal conductivity, other aluminum nitride (AlN) sintered bodies, beryllium oxide (BeO) ) Since it was insufficient compared with sintered bodies, silicon carbide (SiC) sintered bodies, etc., it has not been put into practical use as an electronic material such as a ceramic substrate for semiconductors that requires heat dissipation, There was a difficulty with a narrow application range.

  On the other hand, the above-mentioned aluminum nitride sintered body has characteristics of higher thermal conductivity and lower thermal expansion coefficient than other ceramic sintered bodies, so that high speed, high output, multi-functionality, and large size are progressing. However, a semiconductor circuit board material and a packaging material that are sufficiently satisfactory in terms of mechanical strength have not been obtained. Therefore, there is a demand for the development of a ceramic sintered body having high strength and having both high insulation and high thermal conductivity.

  In order to meet the above requirements, the inventor of the present application has developed a silicon nitride sintered body excellent in both mechanical strength and thermal conductivity by improving the composition and structure of the sintered body. However, the conventional silicon nitride sintered body has a drawback that the size of pores existing in the grain boundary phase tends to be as large as about 1 μm in diameter. In addition, there is a problem that current leakage tends to occur through the pores when a voltage is applied. Accordingly, such a sintered body has a problem that it cannot be said that it is still sufficient as a substrate for a semiconductor because insulation properties are lowered.

  That is, when the silicon nitride sintered body manufactured by the above-described conventional manufacturing method is used as a ceramic substrate, and various power modules are formed by bonding a metal circuit board and mounting a semiconductor element on the ceramic substrate surface, It has been difficult to obtain a highly reliable power module because the ceramic substrate has low insulation and large dielectric loss. This tendency has become more prominent with the recent progress of higher output and higher integration of semiconductor devices.

  Specifically, when various power modules for high power and large capacity are formed using the above silicon nitride ceramic substrate, the insulation between the front and back surfaces of the ceramic substrate is lowered and leak current is likely to occur. . When the leakage current value exceeds a predetermined value, the current flowing through the metal circuit board passes through the ceramic substrate and leaks (leaks) to other metal circuits. Therefore, although it is not electrically connected, leakage current (leakage current) flows to other metal circuit boards, which may cause malfunction of semiconductor elements or damage components of various power modules. There has been a problem in that an adverse effect occurs.

  The present invention has been made in order to cope with the above-described problems, and in addition to the high strength characteristics inherent in the silicon nitride sintered body, it has particularly high insulation and can effectively suppress the occurrence of leakage current. Another object of the present invention is to provide a semiconductor module using a silicon nitride ceramic substrate having high thermal conductivity and excellent heat dissipation, and an electronic device using the same.

  In order to achieve the above object, the present inventor has investigated the cause of leakage current in a module using a conventional silicon nitride ceramic substrate, and has obtained the following knowledge.

  That is, since the surface of a conventional silicon nitride ceramic substrate has poor sinterability of the silicon nitride sintered body constituting the substrate, a microcrack having a width of 1 μm or more, a submicron crack having a width of less than 1 μm, and the like. When a large number of cracks are easily formed and these cracks progress in the thickness direction of the substrate, the thickness of the ceramic substrate is reduced by an amount corresponding to the length of the crack, and the ceramic substrate as an insulator is reduced. Since the substantial thickness is reduced, the insulation is lowered, and when a module is formed, a leak current is likely to occur. Note that the above-described cracks are likely to occur when the ceramic sintered body is polished to a predetermined thickness.

  Therefore, in order to suppress the occurrence of the leakage current, it is important to consider a molding method in which the thickness is not adjusted by polishing the substrate. It was found that by setting the molding pressure to 120 MPa or higher, a dense sintered body with less cracking can be obtained, and the generation of leakage current can be effectively reduced.

  In addition, since silicon nitride crystal grains are inherently insulating, no current flows, but in an actual silicon nitride ceramic substrate, a glass phase composed of a composite oxide of a sintering aid component is formed as a grain boundary phase. It has been found that the glass phase formed in the grain boundary phase is one cause of the leakage current phenomenon.

  Furthermore, since the glass phase has a large thermal resistance, it has been found that the thermal conductivity of the silicon nitride ceramic substrate is likely to be lowered, and that if the glass phase is large, cracks are likely to occur. The grain boundary phase is necessary to maintain the strength of the silicon nitride ceramic substrate to a certain extent. However, the presence of a grain boundary phase results in a structure that easily generates a leakage current as described above. Therefore, in the present invention, a leakage current is hardly generated and a grain boundary phase having a high thermal conductivity is formed.

  Specifically, by crystallizing at least a part of the grain boundary phase, the ratio of the glass phase having high thermal resistance is reduced and the thermal conductivity of the silicon nitride ceramic substrate is increased to 50 W / m · K or more. At the same time, leakage current is effectively prevented.

  Further, by adding a predetermined amount of Hf oxide, it is possible to suppress the generation of the glass phase, the crystallization of the grain boundary phase is likely to proceed, and the high thermal conductivity of the substrate and the suppression of the leakage current are achieved. It was also found effective from both sides.

  Furthermore, since carbon has conductivity, it has also been found that carbon remaining on the sintered silicon nitride ceramic substrate is one of the causes of leakage current. As a countermeasure, it has also been found that the leakage current value of the silicon nitride ceramic substrate can be effectively reduced by regulating the residual carbon content of the molded body after molding and degreasing the raw material mixture to a predetermined value or less.

  Also, when manufacturing conventional silicon nitride sintered bodies, various types of silicon nitride powder, types and addition amounts of sintering aids and additives, sintering conditions, etc., which were generally used were changed. The effects of these elements on the properties of the sintered product as the final product were confirmed by experiments.

  As a result, a raw material mixture obtained by adding a predetermined amount of rare earth elements to fine silicon nitride powder having high purity is molded and degreased, and the resulting molded body is heated and held at a predetermined temperature for a certain period of time to perform densification sintering. After the implementation, it was found that a silicon nitride sintered body having a high strength and a high strength can be obtained when it is gradually cooled at a predetermined cooling rate.

  In addition, by using high-purity silicon nitride raw material powder with reduced oxygen and impurity cation element content, and setting the thickness of the silicon nitride molded body to a small thickness, sintering, the glass phase in the grain boundary phase ( Amorphous phase) can be effectively prevented, and a silicon nitride sintered body having a high thermal conductivity of 50 W / m · K or more can be obtained even when only a rare earth element oxide is added to the raw material powder. Got.

  Further, conventionally, when the sintered body was cooled by turning off the heating power source of the firing furnace after the sintering operation was completed, the cooling rate was 400 to 800 ° C. per hour, but the present inventors According to the experiment, the grain boundary phase of the silicon nitride sintered body structure changed from an amorphous state to a phase containing a crystalline phase by controlling the cooling rate to 100 ° C or less per hour, and the high strength characteristics And high heat transfer properties were achieved at the same time.

  However, as a result of further research on improvement, the present inventor has improved sinterability when adding 0.3 to 3.0% by weight of Mg in terms of oxide in addition to rare earth elements. Therefore, the present inventors have found that the strength of the sintered body can be increased and completed the present invention. Incidentally, even when the raw material molded body is sintered in a temperature range of 1500 to 1900 ° C. to make a ceramic substrate, the leakage current value when an AC voltage of 1.5 kV-100 Hz is applied is 500 nA or less, or 1 MHz. A silicon nitride ceramic substrate having a dielectric loss of 0.0001 or less when the AC voltage is applied can be obtained. In addition, this silicon nitride ceramic substrate can achieve a bending strength of 500 MPa or more and a high thermal conductivity of 50 W / m · K or more.

  In addition, rare earth oxide, magnesia (MgO), Hf compound, Ti, Zr, W, Mo, Ta, Nb, V, Cr compound were added in predetermined amounts to fine silicon nitride raw material powder as needed. After degreasing the raw material mixture and sintering the obtained molded body, the molded body is held under predetermined heating and atmospheric conditions and subjected to deoxygenation treatment (reduction of oxygen concentration), followed by main sintering. When the sintered body is cooled slowly at a cooling rate of 100 ° C./hour from the sintering temperature to the temperature at which the liquid phase formed during sintering by the rare earth element solidifies, high strength, In addition to high thermal conductivity, it is possible to obtain a silicon nitride ceramic substrate having high insulation that can suppress leakage current generated particularly when voltage is applied for the first time, and to obtain a stable and stable semiconductor module or electronic device. found.

  The present invention has been completed based on the above findings.

That is, in the semiconductor module according to the present invention, the porosity is 2.5% or less by volume ratio, the maximum pore diameter in the grain boundary phase is 0.3 μm or less, and the thickness is 1.5 mm or less. A current leakage value when an AC voltage of 1.5 Kv-100 Hz is applied between the front and back surfaces of the silicon nitride sintered body under the conditions of a temperature of 25 ° C. and a humidity of 70%. A silicon nitride ceramic substrate having a thermal conductivity of 50 W / m · K or more and a three-point bending strength of 500 MPa or more, a metal circuit board bonded to the silicon nitride ceramic substrate, and mounted on the metal circuit board painting Bei a semiconductor device, the silicon nitride ceramic substrate, while containing 0.3 to 3.0 mass% in terms of at least one oxide of Hf and Mg, a as impurity cationic elements , Li, Na, K, Fe , Ba, Mn, along with containing 0.5 wt% or less of B in total, and wherein the total oxygen content of the silicon nitride ceramic substrate is less than 3.5 wt% To do.

The fracture toughness value of the silicon nitride ceramic substrate is preferably 6.5 MPa · m ^1/2 or more.

  Further, the silicon nitride ceramic substrate is preferably composed of a silicon nitride crystal and a grain boundary phase, and the ratio of the crystal compound phase in the grain boundary phase to the whole grain boundary phase is preferably 20% or more. The silicon nitride ceramic substrate preferably contains a rare earth element in an amount of 2.0 to 17.5% by mass in terms of an oxide.

  Moreover, it is preferable that the thickness of the silicon nitride sintered body is 1.5 mm or less. Furthermore, the high thermal conductivity silicon nitride sintered body can be configured to have a thermal conductivity of 90 W / m · k or more.

  Further, the silicon nitride ceramic substrate preferably contains 0.3 to 3.0% by mass of Mg in terms of MgO.

  Furthermore, the silicon nitride sintered body contains at least one of Hf and Mg in an amount of 0.3 to 3.0% by mass in terms of oxide, and Al, Li, Na, K, Fe as impurity cation elements. , Ba, Mn, and B are preferably contained in a total amount of 0.5% by mass or less.

  In particular, the residual carbon content in the silicon nitride ceramic substrate needs to be 500 ppm or less. The residual carbon content (or residual carbon content) in the silicon nitride ceramic substrate used in the present invention indicates the content of simple carbon remaining in the ceramic substrate. It is not included.

  Further, in the ceramic substrate, it is preferable that the porosity is 2.5% or less by volume ratio and the total oxygen amount is 3.5% by mass or less. Further, it is preferable that at least one selected from the group consisting of Ti, Zr, W, Mo, Ta, Nb, V, and Cr is contained in an amount of 2% by mass or less in terms of oxide.

  Furthermore, the semiconductor module according to the present invention is a silicon nitride ceramic substrate prepared as described above, a metal circuit board bonded to the silicon nitride ceramic substrate, a semiconductor element mounted on the metal circuit board, It is characterized by providing.

  Further, the method for producing a silicon nitride ceramic substrate used in the present invention comprises forming a raw material mixture obtained by adding 2 to 17.5% by mass of a rare earth element in terms of oxide to silicon nitride powder. After degreasing and then sintering the obtained molded body, it was held at a temperature of 1300-1600 ° C. for a predetermined time during sintering, then sintered at a temperature of 1700-1900 ° C. The cooling rate of the sintered body that reaches the temperature at which the liquid phase formed at the time of solidification solidifies is gradually reduced to 100 ° C. or less per hour.

  Further, the silicon nitride powder has oxygen of 1.5% by mass or less, Al, Li, Na, K, Fe, Ba, Mn, and B as impurity cation elements in total, 0.5% by mass or less, α phase It is preferable that 75-97 mass% or more of type silicon nitride is contained and the average particle size is 1.0 μm or less.

  Moreover, in the said manufacturing method, it is preferable to add 0.3-3.0 mass% in conversion to an oxide at least one of Hf and Mg to a silicon nitride powder. Further, it is preferable to add at least 2% by weight or less selected from the group consisting of Ti, Zr, W, Mo, Ta, Nb, V and Cr to silicon nitride powder in terms of oxide.

  Moreover, it is preferable to prepare the molded body by molding the raw material mixture at a molding pressure of 120 MPa or more. Further, the molding pressure is preferably in the range of 120 to 200 MPa. In particular, the residual carbon content of the sintered body after sintering needs to be 500 ppm or less.

According to the above manufacturing method, the leakage current value when an AC voltage of 1.5 kV-100 Hz is applied under the conditions of a temperature of 25 ° C. and a humidity of 70% is 1000 nA or less, and preferably the total oxygen amount is 3. The grain boundary phase containing rare earth elements and the like is formed in the silicon nitride crystal structure, the maximum pore diameter in the grain boundary phase is 0.3 μm or less, and the porosity is 2.5%. The thermal conductivity was 50 W / m · K or more, the three-point bending strength was 500 MPa or more at room temperature, and the fracture toughness value was 6.5 MPa · m ^1/2 or more. A silicon nitride ceramic substrate is obtained.

  The leak current value is measured as follows. That is, when a metal electrode is bonded between the front and back surfaces of the silicon nitride ceramic substrate, and an AC voltage of 1.5 kV-100 Hz is applied between the electrodes, the current value of the leakage current flowing between the metal electrodes is expressed by a curve tracer. Etc. can be measured.

  If the leakage current value exceeds 1000 nA, the insulating property of the substrate itself is insufficient, and it becomes unsuitable as a ceramic substrate material for a power module that has a particularly high output or high integration / capacity. Preferably it is 500 nA or less.

  In specifying the leakage current value, in the present invention, the measurement conditions are unified at a temperature of 25 ° C. and a humidity of 70%. The measurement conditions were specified because the leak current value fluctuates somewhat depending on temperature and humidity. In the present invention, only the measurement conditions for the leakage current value are specified, so it goes without saying that the silicon nitride ceramic substrate of the present invention can be used under other conditions.

  The silicon nitride powder that is used in the manufacturing method and is a main component of the sintered body constituting the ceramic substrate has an oxygen content of 1.5% by mass in consideration of sinterability, strength, and thermal conductivity. In the following, it is preferably 0.5 to 1.2% by mass, and the total content of impurity cation elements such as Al, Li, Na, K, Fe, Ba, Mn, and B is 0.5% by mass or less, preferably 0 .Alpha.-phase type silicon nitride suppressed to 3% by mass or less is contained in an amount of 75 to 97% by mass, preferably 80 to 95% by mass, and the average particle size is 1.0 μm or less, preferably 0.4 to 0.8 μm. It is preferable to use a silicon nitride powder as fine as possible.

  As the silicon nitride raw material powder, α-phase type and β-phase type powders are known, but the α-phase type silicon nitride raw material powder tends to have insufficient strength when formed into a sintered body. On the other hand, the β-phase type silicon nitride raw material powder requires high-temperature firing, but a high-strength sintered body having a high aspect ratio and complicated fibrous silicon nitride can be obtained. Therefore, in the present invention, it is preferable that the α phase type raw material powder is fired at a high temperature to form a β phase type sintered body as the silicon nitride sintered body.

  In the present invention, the reason why the blending amount of the α-phase type silicon nitride powder is limited to the range of 75 to 97% by mass is that the bending strength, thermal conductivity and insulation of the sintered body are markedly within the range of 75% by mass or more. This is because the excellent characteristics of silicon nitride become remarkable. On the other hand, considering the sinterability, the range is up to 97% by mass. Preferably it is set as the range of 80-95 mass%.

  The silicon nitride starting material powder has an oxygen content of 1.5% by mass or less, preferably 0.5 to 1.2% by mass in consideration of sinterability, bending strength, thermal conductivity, and insulation. It is preferable to use fine silicon nitride powder containing 90% by mass or more of α-phase type silicon nitride and having an average particle size of 1.0 μm or less, preferably about 0.4 to 0.8 μm.

  By using fine raw material powder with an average particle size of 1.0 μm or less, it is possible to form a dense sintered body with a porosity of 2.5% or less even with a small amount of sintering aid. In addition, the possibility that the sintering aid may impair the heat conduction characteristics is reduced.

  The total amount of oxygen contained in the silicon nitride ceramic substrate used in the present invention is preferably 3.5% by mass or less. When the total oxygen content of the substrate exceeds 3.5% by mass, the maximum pore diameter in the grain boundary phase increases and, in particular, the current leakage value increases and the insulation of the sintered body decreases. Preferably it is 2.5 mass% or less.

  Furthermore, the maximum pore diameter in the grain boundary phase of the silicon nitride ceramic substrate used in the present invention is defined to be 0.3 μm or less. When the maximum pore diameter exceeds 0.3 μm, the current leakage value is particularly increased and the insulating properties of the sintered body are deteriorated. Preferably, it is 0.2 μm or less.

  Moreover, since the impurity cation elements of Al, Li, Na, K, Fe, Ba, Mn, and B are substances that inhibit the thermal conductivity of the sintered body, a thermal conductivity of 50 W / m · K or more is ensured. In order to achieve this, the content of the impurity cation elements can be achieved by making the total content 0.5% by mass or less. In particular, for the same reason, it is more preferable that the content of the impurity cation elements is 0.3% by mass or less in total. Here, since the silicon nitride powder used to obtain a normal silicon nitride sintered body contains a relatively large amount of Fe and Al in particular, the total amount of Fe and Al is the above-mentioned impurity cation element. It becomes a standard of the total content of.

  Furthermore, a high-density sintered body can be produced by using a silicon nitride raw material powder containing 90% by mass or more of an α-phase type silicon nitride excellent in sinterability compared with a β-phase type. it can.

  The rare earth elements added as sintering aids to the silicon nitride raw material powder include oxides such as Y, Ho, Er, Yb, La, Sc, Pr, Ce, Nd, Dy, Sm, and Gd, or sintering operations. Thus, these oxide substances may be used alone or in combination of two or more oxides. These sintering aids react with the silicon nitride raw material powder to form a liquid phase and function as a sintering accelerator.

  The amount of the sintering aid added is in the range of 2.0 to 17.5 mass% with respect to the raw material powder in terms of oxide. When this addition amount is less than 2.0% by mass, densification or high thermal conductivity of the sintered body is insufficient, particularly when the rare earth element is an element having a large atomic weight such as a lanthanoid element. Thus, a sintered body having a relatively low strength and a relatively low thermal conductivity is formed. On the other hand, when the added amount exceeds 17.5% by mass, an excessive amount of grain boundary phase is generated, and the thermal conductivity decreases and the strength begins to decrease. In particular, it is desirable to set it as 3-15 mass% for the same reason.

In addition, magnesium (Mg) oxide (MgO) used as a selective additive component in the present invention promotes the function of the rare earth element sintering accelerator, enables densification at low temperature, and has a crystal structure. This serves to control the grain growth in and improves the mechanical strength of the Si ₃ N ₄ sintered body. When the amount of MgO added is less than 0.3% by mass in terms of oxide, the effect of addition is insufficient, whereas when the amount exceeds 3.0% by mass, the thermal conductivity decreases. The addition amount is in the range of 0.3 to 3.0% by mass. In particular, the content is desirably 0.5 to 2% by mass.

  In addition, there is an Hf compound as a component that exhibits the same effect as the above MgO. Hf compounds are added as oxides, carbides, nitrides, silicides, and borides. When combined with MgO, sintering is further promoted and the glass phase can be more effectively reduced. About addition amount, it is 0.3-3 mass%, Preferably it is 1.0-2.5 mass%. Since MgO and Hf compounds show similar effects, it is also possible to obtain a synergistic effect by adding both MgO and Hf compounds.

In the present invention, Ti, Zr, V, Nb, Ta, Cr, Mo, and W may be added as oxides, carbides, nitrides, silicides, and borides as other optional additive components. These compounds promote the function of the rare earth element as a sintering accelerator, and also serve to enhance the mechanical strength of the Si ₃ N ₄ sintered body by performing a dispersion strengthening function in the crystal structure. A compound of Ti and Mo is preferred. When the amount of these compounds added is less than 0.1% by mass in terms of oxide, the effect of addition is insufficient, whereas when the amount exceeds 2% by mass, the thermal conductivity, mechanical strength, Since the dielectric breakdown strength is lowered, the addition amount is in the range of 0.1 to 2% by mass. In particular, the content is desirably 0.2 to 1.0% by mass.

  The compounds such as Ti and Mo also function as a light-shielding agent that colors the silicon nitride ceramic substrate black and imparts opacity. Therefore, especially when manufacturing a ceramic circuit board mounted with an integrated circuit or the like that is likely to malfunction due to light from the sintered body, silicon nitride ceramics excellent in light shielding properties by appropriately adding a compound such as Ti It is desirable to use a substrate.

  The porosity of the sintered body is 2.5% or less because it greatly affects the amount of leakage current, the thermal conductivity, and the strength. When the porosity exceeds 2.5%, the leakage current increases rapidly and the heat conduction is hindered, the insulation and thermal conductivity of the sintered body are lowered, and the strength of the sintered body is lowered.

  In addition, silicon nitride ceramic substrates are systematically composed of silicon nitride crystals and grain boundary phases, and the proportion of crystalline compound phases in the grain boundary phases is the amount of leakage current generated in the sintered body and the thermal conductivity. In the sintered body constituting the substrate according to the present invention, the grain boundary phase is preferably 20% or more, and more preferably 50% or more is occupied by the crystal phase. This is because if the crystal phase is less than 20%, it is not possible to obtain a sintered body having excellent heat dissipation characteristics such that the thermal conductivity is 50 W / m · K or more, little leakage current, and excellent mechanical strength. In particular, since the silicon nitride crystal grains themselves of the silicon nitride sintered body are an insulator, the state of the grain boundary phase greatly affects the leakage current value of the silicon nitride sintered body.

  Further, as described above, the porosity of the silicon nitride sintered body is 2.5% or less, and the maximum pore diameter in the grain boundary phase formed in the silicon nitride crystal structure is 0.3 μm or less, and the thermal conductivity In order to obtain a silicon nitride sintered body having a total oxygen content of 3.5% by mass or less and a current leak value of 1000 nA or less, the silicon nitride prepared from the above raw materials is 50 W / m · K or more. After degreasing the molded body, the sintered body is held at a temperature of 1300 to 1600 ° C. for 0.5 to 3 hours during sintering, and then subjected to atmospheric pressure sintering or pressure sintering at a temperature of 1700 to 1900 ° C. for about 2 to 10 hours. In addition, it is important that the cooling rate of the sintered body immediately after completion of the sintering operation is gradually cooled to 100 ° C. or less per hour. As the pressure sintering method, various pressure sintering methods such as atmospheric pressure sintering, hot pressing, and HIP treatment are used.

  In particular, during the sintering process, the oxygen concentration in the liquid phase (grain boundary phase) generated by holding at a temperature of 1300 to 1600 ° C. for 0.5 to 3 hours is reduced to increase the melting point of the liquid phase. It is possible to suppress the generation of bubble-like pores that occur when the phases are melted and to minimize the maximum pore diameter, thereby improving the current leakage value of the sintered body. This holding operation in the middle of sintering exhibits a remarkable effect particularly when the treatment is performed in a vacuum atmosphere at a temperature of 1350 to 1450 ° C., but the same effect can be obtained even in a treatment in a nitrogen atmosphere at a temperature of 1500 to 1600 ° C. Demonstrated.

  Further, when the cooling rate of the sintered body that reaches the temperature at which the liquid phase solidifies after sintering is 100 ° C./hour or less, and the oxygen concentration in the liquid phase is further reduced, A sintered body with improved leakage and reduced insulation can be obtained.

  When the sintering temperature is less than 1700 ° C., the sintered body is not sufficiently densified and the porosity becomes 2.5 vol% or more, and the insulation, mechanical strength, and thermal conductivity are all reduced. On the other hand, if the sintering temperature exceeds 1900 ° C., the silicon nitride component itself tends to evaporate and decompose. In particular, when pressureless sintering is performed instead of pressure sintering, decomposition and evaporation of silicon nitride starts from around 1800 ° C.

  The cooling rate of the sintered body immediately after the completion of the sintering operation is an important control factor for crystallizing the grain boundary phase, and when performing rapid cooling such that the cooling rate exceeds 100 ° C. per hour, While the grain boundary phase of the sintered body structure is amorphous (glass phase), the liquid phase generated in the sintered body accounts for less than 20% of the grain boundary phase as a crystal phase, and the leakage current increases. There is no further improvement in thermal conductivity.

  The temperature range in which the cooling rate should be strictly adjusted is sufficient from the predetermined sintering temperature (1700 to 1900 ° C.) to the solidification of the liquid phase generated by the reaction of the sintering aid. . Incidentally, the liquid phase freezing point in the case of using the above sintering aid is about 1600 to 1500 ° C. And by controlling the cooling rate of the sintered body at least from the sintering temperature to the liquid phase solidification temperature to 100 ° C./hour, preferably 50 ° C. or less, more preferably 25 ° C. or less, The amount of oxygen is 3.5% by mass or less, the maximum pore diameter is 0.3 μm or less, the porosity is 2.5% or less, and 20% or more, particularly preferably 50% or more of the grain boundary phase is the crystalline phase. Thus, a silicon nitride sintered body having both excellent thermal conductivity and mechanical strength and low leakage current can be obtained.

  In addition, although the one where the cooling rate of the said sintered compact is slow is effective in crystallization of a grain boundary phase, when too slow, since manufacturing time becomes long, the minimum of a cooling rate is 10 degreeC or more per hour from a viewpoint of manufacturability. preferable.

  The “total oxygen content of the sintered body” defined in the present invention indicates the total amount of oxygen constituting the silicon nitride sintered body in mass%. Therefore, when oxygen is present in the silicon nitride sintered body as a metal oxide, oxynitride, or the like, not the amount of the metal oxide (and oxynitride) but the metal oxide (and oxynitride) ) Is focused on the amount of oxygen in it.

  The silicon nitride ceramic substrate used in the present invention is manufactured through the following processes, for example. That is, for a fine silicon nitride powder having a predetermined fine particle size and a small impurity content, a predetermined amount of a sintering aid, a necessary additive such as an organic binder, and Ti as required A raw material mixture is prepared by adding a compound, and the obtained raw material mixture is then molded to obtain a molded body having a predetermined shape. As a forming method of the raw material mixture, a general-purpose mold pressing method, a sheet forming method such as a doctor blade method, and the like can be applied.

  In the case of forming a molded body by the above-described mold pressing method, it is preferable to set the molding pressure of the raw material mixture to 120 MPa or more, particularly in order to form a grain boundary phase in which leakage current hardly occurs after sintering. . When this molding pressure is less than 120 MPa, a portion where the rare earth element compound, which is a component that mainly constitutes the grain boundary phase, is easily aggregated, and a sufficiently dense molded body cannot be formed, and cracks are generated. Only a large number of ceramic substrates can be obtained. Since the current easily flows in the portion where the grain boundary phases are aggregated, the leakage current value is increased. Further, even if a compact that is insufficiently consolidated is sintered, cracks are likely to occur, resulting in an increase in leakage current due to cracks in the substrate. On the other hand, when the molding pressure is excessively set to exceed 200 MPa, the durability of the molding die is lowered.

  In addition, when the molding pressure is excessively high, the molded body becomes harder than necessary, and bubbles (pores) generated inside the molded body are difficult to be discharged outside during the manufacturing process. Therefore, the molding pressure is preferably in the range of 120 to 200 MPa.

  On the other hand, when a silicon nitride ceramic substrate having a predetermined thickness is manufactured, when the thickness is adjusted by polishing the sintered body, cracks are likely to occur on the substrate surface due to an impact force acting during the polishing process. Therefore, a method in which a thin molded body is formed at the molding stage so that the thickness of the silicon nitride ceramic substrate is 1.5 mm or less and polishing is not performed after sintering is also effective from the viewpoint of preventing the occurrence of cracks. It is. Further, by forming the molded body thin, the oxygen concentration can be more efficiently reduced and the pore diameter can be reduced by a holding operation performed in the middle of the sintering process.

  Specifically, a thin sheet-like molded body is prepared using an extrusion forming method or a doctor blade method, and a silicon nitride sintered body having a predetermined thickness is formed by simply degreasing and sintering the sheet-like molded body. Also good. Even in this case, a slight honing process may be performed in order to remove bed powder and the like adhering to the sheet-like sintered body. However, it is better not to employ a polishing method having a high impact force that generates cracks. Moreover, as a mild honing process, the conditions that the abrasive grain injection pressure is 0.5 MPa or less can be mentioned.

  Subsequent to the above molding operation, the molded body is heated in a non-oxidizing atmosphere at a temperature of 600 to 800 ° C. or in air at a temperature of 400 to 500 ° C. for 1 to 2 hours to sufficiently remove the organic binder component added in advance. Remove and degrease.

  Here, in order to form a grain boundary phase in which leakage current is unlikely to occur, the carbon component in the degreasing treatment is set so that the residual amount of carbon resulting from the organic binder used when forming the molded body is 500 ppm or less. It is effective to sufficiently remove.

  In general, carbon has conductivity, and if the amount of residual carbon in the sintered ceramic body after sintering exceeds 500 ppm, the leakage current value tends to increase. For this reason, it is ideal that the carbon component is not contained from the beginning. However, in reality, if a certain amount of organic matter (organic binder) is not blended in the raw material mixture, the shape retention and handling properties of the molded body are deteriorated. Therefore, the degreasing step is provided in order to reduce the amount of residual carbon.

  However, it is difficult to completely eliminate the carbon component unless the molded body is specially treated, and the residual carbon is stable when combined with additives such as silicon nitride and sintering aids during sintering. It is difficult to completely eliminate such carbides. However, the generation of the leakage current can be effectively prevented by sufficiently degreasing the residual carbon amount in the sintered ceramic substrate to 500 ppm or less.

  In particular, in a thin substrate having a substrate thickness of 1 mm or less, further 0.7 mm or less, it is preferable to control the residual carbon amount because a large amount of residual carbon tends to adversely affect the leakage current value.

  Next, the sintering furnace is depressurized during sintering of the degreased molded body and held at a temperature of 1300 to 1600 ° C. for 0.5 to 3 hours, and then an inert gas such as nitrogen gas, hydrogen gas or argon gas. Atmospheric pressure sintering or atmospheric pressure sintering is performed for a predetermined time at a temperature of 1700 to 1900 ° C. in an atmosphere.

  The silicon nitride sintered body produced by the above method has a total oxygen content of 3.5% by mass or less, a porosity of 2.5% or less, a maximum pore size of 0.3 μm or less, and 50 W / m · K (25 ° C.). It has the above thermal conductivity and has excellent mechanical properties with a three-point bending strength of 500 MPa or more at room temperature.

In addition, a highly thermally conductive silicon nitride sintered body having a thermal conductivity of 90 W / m · K or more can be obtained.

  Moreover, according to the above forming method, a silicon nitride ceramic substrate that is dense from the stage of the formed body and has few cracks can be obtained. Thus, no microcracks with a width of 1 μm or more are generated at all on the substrate surface made of a silicon nitride sintered body having improved formability and sinterability, and the generation amount of submicron cracks with a width of less than 1 μm is greatly increased. Can be reduced. Specifically, the number of submicron cracks generated in the substrate surface structure when the unit area is 10 μm × 10 μm is 2 or less.

  According to the semiconductor module of the present invention, since the silicon nitride ceramic substrate is formed by performing the main sintering after performing the predetermined holding operation in the middle of the sintering process, the oxygen concentration of the sintered body is The generation of pores is suppressed, the maximum pore diameter can be minimized, and a highly insulating silicon nitride ceramic substrate with little leakage current is obtained, and a semiconductor module with stable characteristics is obtained. can get.

  Also, by forming the raw material mixture at a molding pressure of 120 MPa or more to prepare a molded body, it is possible to greatly reduce the cracks generated in the substrate, and the nitriding with high insulation with less generation of leakage current A silicon ceramic substrate is obtained.

  Therefore, when a power module is prepared using this silicon nitride ceramic substrate, a power module having high insulation and operational reliability can be formed even if the output and capacity are increased.

  When the silicon nitride ceramic substrate is used for a power module or a circuit board, a metal circuit board is integrally bonded to the ceramic substrate. As the metal circuit board, it is preferable to use a metal or alloy having high electrical conductivity, such as copper, aluminum, or an alloy thereof (copper alloy, Al alloy). Various methods such as a direct bonding method and an active metal method can be applied to the method of providing the metal circuit board.

  As described above, according to the semiconductor module and the electronic device using the semiconductor module according to the present invention, after carrying out a predetermined holding operation during the sintering process, the main sintering is performed to form a silicon nitride ceramic substrate. Therefore, the oxygen concentration in the sintered body is reduced, the generation of pores is suppressed, the maximum pore diameter can be made extremely small, and the generation of semiconductor modules and electronic devices with high insulation properties with little leakage current generation Equipment is obtained. Therefore, when a power module is prepared using the above silicon nitride baked ceramic substrate as a ceramic circuit substrate, a power module with high insulation and high operation reliability can be formed even when the output is increased and the capacity is increased. .

The top view which shows the structure of the silicon nitride ceramic circuit board using the silicon nitride ceramic substrate used by this invention. FIG. 2 is a cross-sectional view of the silicon nitride ceramic circuit board shown in FIG. 1. The bottom view of the silicon nitride ceramic circuit board shown in FIG.

  Next, the embodiments of the present invention will be specifically described with reference to the following examples.

[Examples 1 to 4]
Examples 1 to 3 contain 1.1 mass% of oxygen, 0.10 mass% of AI, Li, Na, K, Fe, Ba, Mn, and B as impurity cation elements in total, and an α-phase type silicon nitride 86 mass% of Si ₃ N ₄ (silicon nitride) raw material powder having an average particle diameter of 0.55 μm containing 97% elemental element and Y ₂ O ₃ (yttrium oxide) powder 10 having an average particle diameter of 0.9 μm as a sintering aid 2% by mass of MgO (magnesium oxide) powder having an average particle size of 0.5 μm and 2% by mass of HfO 2 (hafnium oxide) powder having an average particle size of 1.0 μm are added, and silicon nitride is used as a grinding medium in ethyl alcohol. A raw material mixture was prepared by wet mixing for 96 hours using a raw ball and then drying.

Next, a predetermined amount of an organic binder was added to the obtained raw material powder mixture to prepare a blended granulated powder, and then press molding was performed at a molding pressure of 130 MPa to produce a large number of compacts. Next, after degreasing the obtained molded body in an air stream at 450 ° C. for 4 hours, heating from room temperature and carrying out a holding operation for half an hour at a temperature of 1400 ° C. in a vacuum atmosphere of 10 ⁻² Pa or less. After cooling at a temperature of 1825 ° C. for 6 hours in a nitrogen gas atmosphere of 0.7 MPa, the cooling rates until the temperature drops to 1500 ° C. are 100 ° C./hr (Example 1) and 50 ° C./hr (implementation), respectively. Example 2), adjusted to 25 ° C./hr (Example 3), and gradually cooled the sintered body to prepare silicon nitride ceramic substrates for Examples 1 to 3, respectively. In addition, the size of each board | substrate was unified into stand 50mm x width 40mm x thickness 0.9mm.

  Further, as Example 4, the holding operation in the middle of sintering was carried out under the same conditions as in Example 1 except that the holding operation was carried out in a nitrogen gas atmosphere of 1 × 104 Pa at a temperature of 1600 ° C. for 2 hours. A silicon nitride ceramic substrate for Example 4 was prepared.

[Comparative Examples 1-3]
As Comparative Example 1, silicon nitride ceramics for Comparative Example 1 were treated under the same conditions as in Example 1 except that the molding pressure was 90 MPa and the intermediate holding operation at a temperature of 1400 ° C. was not performed in a vacuum atmosphere. A substrate was prepared. Further, as Comparative Example 2, the example except that the molding pressure was set to 90 MPa, the holding operation during the sintering was not performed, and the cooling rate after sintering was set to 500 ° C./hr by conventional furnace cooling. 1 was prepared under the same conditions as in No. 1 to prepare a silicon nitride ceramic substrate for Comparative Example 2. As Comparative Example 3, the oxygen content is 1.7% by mass, the total content of the impurity cation elements is 0.7% by mass, and the average particle size is 1.5 μm containing 91% α-phase silicon nitride. A silicon nitride ceramic substrate for Comparative Example 3 was prepared by processing under the same conditions as in Example 1 except that Si ₃ N ₄ (silicon nitride) raw material powder was used.

  For each of the silicon nitride ceramic substrates for Examples 1 to 4 and Comparative Examples 1 to 3 thus obtained, the total oxygen amount, porosity, maximum pore diameter in the grain boundary phase, current leak value, thermal conductivity, at room temperature The results shown in Table 1 were obtained by measuring the three-point bending strength and the fracture toughness value by the Niihara method in the microindentation method.

  The current leak value was measured as follows. That is, both surfaces of each ceramic substrate formed in a plate shape were ground with a diamond grindstone, and the thickness was set to 0.6 mm. A leakage current that flows between the front and back of the substrate when an AC voltage of 1.5 Kv (100 Hz) is applied between the front and back surfaces of each substrate formed in a plate shape in a chamber adjusted to a temperature of 25 ° C. and a humidity of 70%. The value of was measured with a curve tracer measuring device.

  The porosity was measured by Archimedes method, and the thermal conductivity was measured by laser flash method. The maximum pore diameter in the grain boundary phase was measured by selecting an arbitrary three locations with a unit area of 100 μm × 100 μm from the cross section of the sintered body, and measuring it with an enlarged photograph such as a scanning electron micrograph (SEM). The largest pore diameter was measured. As the maximum pore diameter, the longest diagonal line shown in the enlarged photograph was adopted.

  Further, the total oxygen amount in the silicon nitride ceramic substrate was measured by an oxygen analyzer according to an inert gas melting-infrared absorption method.

  Also, for the three-point bending strength, one side of the sintered body is ground with a diamond grindstone, the thickness is set to 0.6 mm, and the sintered surface is directly placed on the tensile surface side in the three-point bending strength test. The span (fulcrum distance) was set to 30 mm, and the load application speed was set to 0.5 mm / min. Each measurement result is shown in Table 1 below.

  As is clear from the results shown in Table 1, the silicon nitride ceramic substrate for each example is formed by performing main sintering after performing a predetermined holding operation during the sintering process. As a result, the oxygen concentration of the substrate was reduced, the generation of pores was suppressed, the maximum pore diameter was miniaturized, and a high-strength silicon nitride ceramic substrate having a high thermal conductivity with little generation of leakage current was obtained.

  On the other hand, in Comparative Examples 1 and 2 in which the holding operation in the middle of the sintering process was not performed, the effect of reducing oxygen was small, and many pores remained, and the leakage current value increased.

  In addition, when the cooling rate of the sintered body was set large as in Comparative Example 2 and rapidly cooled, the proportion of the crystal phase in the grain boundary phase decreased and the maximum pore diameter increased and the thermal conductivity decreased. . Further, since the ratio of the glass phase of the grain boundary phase is relatively large, the leakage current value is also increased.

  Further, in Comparative Example 3 in which the amount of oxygen in the raw material powder is excessive, the porosity is large even when the holding operation and the slow cooling during the sintering are performed, and the maximum pore diameter is also large. It has been found that the insulation is greatly reduced.

[Examples 5 to 47]
The silicon nitride raw material powder used in Example 1 as Examples 5 to 47, Y ₂ O ₃ powder, MgO powder, HfO ₂ powder, and average particle size 0.9 as shown in Tables 2 and 3 In addition to various rare earth oxide powders of ~ 1.0 μm, various compound powders having an average particle size of 0.4 to 0.5 μm were prepared so as to have the composition ratios shown in Tables 2 to 3, and respective raw material mixtures were prepared. did.

  Next, each raw material mixture obtained was molded and degreased under the same conditions as in Example 1, followed by holding operations under the conditions shown in Tables 2 and 3 during the sintering, and then performing the main sintering. Thus, silicon nitride ceramic substrates according to Examples 5 to 47 were manufactured. Further, as Examples 43, 44, and 45, the thicknesses of the respective substrates in Examples 29, 30, and 31 were ground to 0.3 mm under the conditions shown in Example 1 to obtain Examples 43, 44, and 45. Each silicon nitride ceramic substrate was manufactured.

[Comparative Examples 4 to 9]
On the other hand, as shown in Table 3 as Comparative Examples 4 to 9, Y ₂ O ₃ was added in an excessive amount (Comparative Example 4), Er ₂ O ₃ was added in an excessive amount (Comparative Example 5), and Ho ₂ O _3. (Comparative Example 6), MgO added excessively (Comparative Example 7), HfO ₂ added excessively (Comparative Example 8), TiO ₂ added excessively (Comparative Example) The raw material mixture of 9) was prepared.

  Next, after each raw material mixture obtained was molded and degreased under the same conditions as in Example 5, a holding operation was performed in the middle of sintering under the conditions shown in Table 3, followed by main sintering, thereby comparing each of the comparative examples. Silicon nitride ceramic substrates for 4-9 were produced.

  About each silicon nitride ceramic substrate for each example and comparative example manufactured in this way, the total oxygen amount, the porosity, the maximum pore diameter in the grain boundary phase, the current leakage value, the thermal conductivity under the same conditions as in Example 1. The three-point bending strength and fracture toughness value at room temperature were measured and the results shown in Tables 2 to 3 below were obtained.

  As is clear from the results shown in Tables 2 and 3 above, the holding operation is performed under predetermined conditions in the course of the sintering process of the raw material compact that includes a predetermined amount of rare earth elements and defines the amount of oxygen. In the ceramic substrate for each example manufactured by slow cooling later, the oxygen concentration of the ceramic substrate is reduced, the generation of pores is suppressed, the maximum pore diameter is miniaturized, and the generation of leakage current is small. A high-strength silicon nitride ceramic substrate having high thermal conductivity has been obtained.

  On the other hand, as shown in Comparative Examples 4 to 9, in the substrate in which the addition amount of the rare earth component is outside the range specified in the present invention, even if the holding operation during the sintering and the slow cooling after the sintering are performed, It can be confirmed that the characteristic requirements defined in the present invention are not satisfied in any of the characteristics such as the total oxygen content, porosity, maximum pore diameter, thermal conductivity, and three-point bending strength of the sintered body.

  Further, the present invention also applies to silicon nitride ceramic substrates according to Examples 46 and 47, which have the same composition as Example 10 and were prepared by setting the cooling rate after sintering to 500 ° C./hr (natural cooling). The leakage current value in the range specified by is obtained. However, in Examples 46 and 47, it was confirmed that the thermal conductivity was slightly inferior compared with the substrate of Example 10 prepared by slow cooling.

Further, with respect to the silicon nitride ceramic substrates for Example 28 and Comparative Example 2, the leakage current value was measured when the applied voltage was changed, and the results shown in Table 4 below were obtained. In any case, the frequency was unified to 100 Hz.

  As is apparent from the results shown in Table 4 above, when the applied voltage is less than 0.1 kV, a large difference in the leakage current value does not appear, but the difference tends to increase as the applied voltage increases. did. In other words, it can be said that the silicon nitride ceramic substrate for this example is effective for a circuit substrate on which a relatively large voltage of 0.1 kV (100 V) or more is applied.

  In addition, using the silicon nitride ceramic substrates for Example 28 and Comparative Example 2, silicon nitride ceramic circuit substrates 1 shown in Table 5 and FIGS. 1 to 3 were prepared. This silicon nitride ceramic circuit board 1 has a 0.30 mm thick Cu plate as a pair of metal circuit boards 3 and 3 on the surface side of the silicon nitride ceramic substrate 2, and the gap L is the value shown in Table 5. On the other hand, a back copper plate as a back metal plate having a thickness of 0.25 mm was formed on the back side of the substrate 2.

  In addition, as shown in Table 5, the active metal method or the direct joining method was used for the joining method of the metal plate. In the active metal method, the copper plates were joined using a brazing material having a weight composition of 70Ag-27Cu-3Ti. On the other hand, in the direct bonding method, the surface of the silicon nitride ceramic substrate was oxidized to provide an oxide film having a thickness of 1 μm, and then the copper plate was bonded.

Further, a semiconductor module was assembled by mounting a semiconductor element on the silicon nitride ceramic circuit board prepared as described above. And the voltage of 0.02 kV and 1.5 kV was applied to each semiconductor module as an operating voltage, and the quality of the element function was confirmed. Specifically, 100 sets of the above-mentioned semiconductor modules are prepared, and when all the semiconductor elements function normally when an electronic device incorporating each semiconductor module is continuously operated for 100 hours, it is evaluated as “◯” as no defect. On the other hand, when it did not function normally, it was evaluated as “x” as being defective. The evaluation results are shown in Table 5 below.

  As is apparent from the results shown in Table 5 above, according to the silicon nitride ceramic circuit board for each example, the element function is normal even when the gap L of the metal circuit board is narrowed to 0.1 mm, It was confirmed that no problems occurred.

  On the other hand, in the circuit boards for the respective comparative examples, the operation is normal when the applied voltage is small, but a problem occurs when the applied voltage is large. In particular, it has been found that problems such as malfunctions are likely to occur when the gap between the metal circuit boards is 0.5 mm or less. Further, even in Comparative Examples 2 to 4 in which the gap L between the metal circuit boards was increased to 2 mm, the problem could not be completely eliminated, and therefore, “Δ” was evaluated.

  As can be seen from the results shown in Tables 3 and 4, in each example, the leakage current value in the ceramic substrate is controlled to a predetermined value or less, so that the applied voltage is a relatively high value of 0.1 kV or more. In the circuit board to which a large voltage is applied, the gap L between the metal circuit boards can be set to about 0.1 to 0.5 mm. This facilitates high-density mounting and miniaturization of the circuit board. In other words, the present invention is particularly effective for a silicon nitride circuit board having a fine circuit configuration in which the applied voltage is 0.1 kV or more and the gap between the metal circuit boards is about 0.1 to 0.5 mm.

Next, a reference embodiment of the present invention when the molding pressure of the raw material mixture is changed and the carbon amount is controlled will be specifically described with reference to the following reference examples.

[ Reference Examples 101-149]
1.3% by weight or less of oxygen, Al, Li, Na, K, Fe, Ba, Mn, and B as impurity cation elements in total containing 0.10% by weight or less, 97% α-phase type silicon nitride With respect to the silicon nitride raw material powder having an average particle size of 0.40 μm, rare earth oxides (Y ₂ O ₃ , Er ₂ O having an average particle size of 0.7 μm as a sintering aid as shown in Tables 6 to 8 are used. ₃ , Ho ₂ O ₃ , Yb ₂ O ₃ , Dy ₂ O ₃ , Sm ₂ O ₃ , Nd ₂ O ₃ , Pr ₆ O ₁₁ , CeO ₂ or more) powder, average particle size 0.5 μm MgO (magnesium oxide) powder and, if necessary, a predetermined amount of a compound such as Hf compound and Ti were added, wet mixed in ethyl alcohol for 72 hours, and then dried to prepare a raw material powder mixture.

Next, a predetermined amount of an organic binder or the like was added to the obtained raw material powder mixture and mixed uniformly, and then press molding or doctor blade molding was performed at the molding pressure shown in Tables 6 to 8 to produce a large number of compacts. . Next, after degreasing the obtained molded body, the degreased body was densified and sintered under the sintering conditions shown in Tables 6 to 8 in a nitrogen gas atmosphere, and then a heating apparatus attached to a sintering furnace. The sintered body was adjusted so that the cooling rate of the sintered body during the period until the temperature inside the sintering furnace dropped to 1500 ° C. by controlling the amount of current applied to the steel sheet was the values shown in Tables 6 to 8 respectively. After slow cooling, silicon nitride ceramic substrates for each reference example were prepared.

In addition, the dimension of each silicon nitride ceramic substrate shall be length 60mm x width 40mm x thickness 0.3-0.8mm, and shall perform a honing process in order to remove bed powder as needed. The substrate thickness is 0.8mm is Reference Example 101 to 120, Reference Example 121 to 130 is 0.5 mm, reference example 131 to 149 is 0.3 mm.

[Comparative Example 101]
On the other hand, the MgO is not added to the raw material mixture, and immediately after completion of the densification sintering, the heating device power is turned off, and the conventional cooling rate by furnace cooling (natural cooling) without special control (about 500 ° C. The silicon nitride ceramic substrate for Comparative Example 101 was prepared by sintering under the same conditions as in Reference Example 103 except that the sintered body was cooled at / hr).

[Comparative Example 102]
Molding using silicon nitride raw material powder having an average particle diameter of 0.60 μm containing 1.5% by weight of oxygen, 0.6% by weight of the above-mentioned impurity cation elements in total, and 93% of α-phase type silicon nitride A silicon nitride ceramic substrate for Comparative Example 102 was prepared in the same manner as in Reference Example 103 except that the pressure was set to 100 MPa.

[Comparative Example 103]
The thickness of the molded body was increased to 1.6 mm, the surface was polished after sintering, and processed under the same conditions as Reference Example 103 except that the thickness was adjusted to the same thickness as each Reference Example. A silicon nitride ceramic substrate was prepared.

[Comparative Example 104]
A silicon nitride ceramic substrate for Comparative Example 104 was prepared by treating under the same conditions as Reference Example 103 except that the amount of residual carbon in the sintered body was 800 ppm, which was outside the preferred range of the present invention.

For the silicon nitride ceramic substrates for Reference Examples 101 to 149 and Comparative Examples 101 to 104 thus obtained, the average values of the porosity, thermal conductivity (25 ° C.), and three-point bending strength at room temperature were measured. Furthermore, the ratio (area ratio) of the crystal phase occupying the grain boundary phase of each substrate was measured by X-ray diffraction.

  In addition, while measuring the residual carbon content of each silicon nitride ceramic substrate with an X-ray microanalyzer (EPMA), a square measurement region having a side of 10 μm is set at any four locations on the substrate surface. The presence or absence of the occurrence of microcracks having a width of 1 μm or more was confirmed by a micrograph, and the maximum number of submicron cracks having a width of less than 1 μm was determined.

  Furthermore, a metal circuit board was joined to the front and back surfaces of each silicon nitride ceramic substrate, and an AC voltage of 1.5 kV-100 Hz was applied by contacting the measurement electrodes to the metal circuit boards on the front and back surfaces using a curve tracer measuring device. When the leakage current value was measured. The metal circuit boards on the front and back surfaces were joined by an active metal joining method using an Ag-28 wt% Cu-2 wt% Ti paste. In addition, in joining of a metal circuit board, you may use what was directly joined by Al-0.2-15wt% Si alloy board.

In the measurement of the leakage current, it is possible to measure the measurement electrode by directly contacting the front and back surfaces of the silicon nitride ceramic substrate, but the contact between the tester electrode and the substrate surface is likely to be displaced during the measurement. Therefore, in this reference example, the measurement was performed after joining the metal circuit boards. Since the metal circuit board has good electrical conductivity, it does not affect the leakage current value of the substrate even if it is measured after bonding. Moreover, each dielectric loss when a 1 MHz high frequency alternating voltage was applied between both electrodes was measured using the impedance analyzer, and the result shown in following Table 6-Table 8 was obtained.

As is apparent from the results shown in Tables 6 to 8, in the silicon nitride ceramic circuit board for each reference example, the cooling rate of the sintered body immediately after completion of densification sintering compared to Comparative Example 101 is higher than that of the conventional example. Since the grain boundary phase contains a crystal phase, and the proportion of the crystal phase is higher, the generation of leakage current is less, and a high heat dissipation and high strength substrate having high heat conductivity is obtained.

In any of the reference examples, the leak current value when a high voltage of 1.5 kV is applied is 500 nA or less, indicating excellent insulation characteristics. Further, the dielectric loss in the high frequency region of 1 MHz is 0.0001 or less, and excellent reliability can be realized even when the power module using this substrate is increased in power and capacity. In particular, in the substrate according to each reference example, in the high frequency region of 1 to 5 MHz, the dielectric loss is in a proportional relationship with the frequency, and therefore, the improvement of the insulation and reliability of the substrate becomes more remarkable.

Furthermore, in each of the reference examples containing a predetermined amount of Mg, the crystallization of the grain boundary phase is easy to proceed, and the ratio of the glass phase can be relatively reduced, so that there are few cracks, high strength and thermal conductivity. A silicon nitride substrate with improved is obtained.

In addition, in the substrate according to each reference example that has been sufficiently degreased so that the residual carbon content of the silicon nitride ceramic substrate is 500 ppm or less, the leakage current value is also reduced, and excellent withstand voltage characteristics may be exhibited. It could be confirmed.

  On the other hand, when the cooling rate of the sintered body was set large as in Comparative Example 101 and rapidly cooled, the proportion of the crystal phase in the grain boundary phase was as low as 10% or less, and the thermal conductivity was lowered. Further, since the ratio of the glass phase of the grain boundary phase is relatively large, the leakage current value is also increased.

  Further, when the molding pressure is lowered as in the comparative example 102, the amount of cracks generated is large, the leakage current value is high, and the insulating property is lowered. In the case of Comparative Example 102 using silicon nitride powder containing a large amount of the impurity cation element as 0.6% by weight of the total amount, the grain boundary is set even if the cooling rate of the sintered body is the same as in Example 101. Most of the phase was formed amorphous and the thermal conductivity decreased relatively.

  Further, when the substrate obtained by sintering as in Comparative Example 103 is polished and adjusted to a predetermined thickness, cracks are likely to occur on the substrate surface due to the impact force due to the polishing, and the leakage current value is high. It was confirmed that the withstand voltage characteristics of the substrate deteriorated.

  In addition, the circuit board using the silicon nitride ceramic substrate used in the present invention is not limited to the form in which the metal circuit board is provided on both surfaces of the substrate as shown in the embodiment, but the metal circuit only on the surface. Needless to say, it may be formed in a form in which a plate is provided, or a metal circuit board is provided on the front surface and a heat sink or a metal plate for preventing warpage is provided on the back surface.

DESCRIPTION OF SYMBOLS 1 Silicon nitride ceramic circuit board 2 Silicon nitride ceramic board 3 Metal circuit board (copper board)
4 Back metal plate (back copper plate)

Claims (8)

It consists of a silicon nitride sintered body having a porosity of 2.5% or less by volume ratio, a maximum pore diameter in the grain boundary phase of 0.3 μm or less, and a thickness of 1.5 mm or less, and a temperature of 25 ° C. When the AC voltage of 1.5 Kv-100 Hz is applied between the front and back of the silicon nitride sintered body under the condition of 70% humidity, the current leakage value is 1000 nA or less, and the thermal conductivity is 50 W / m · K or more. , a silicon nitride ceramic substrate 3-point bending strength is not less than 500 MPa, and a metal circuit plate bonded to the silicon nitride ceramic substrate, e Bei a semiconductor element mounted on the metal circuit board, the nitriding The silicon ceramic substrate contains at least one of Hf and Mg in an amount of 0.3 to 3.0% by mass in terms of oxide, while Al, Li, Na, K, Fe, Ba, Mn, B Together containing 0.5 mass% in total, the semiconductor module, wherein the total oxygen content of the silicon nitride ceramic substrate is less than 3.5 wt%. 2. The semiconductor module according to claim 1, wherein the silicon nitride ceramic substrate has a fracture toughness value of 6.5 MPa · m ^1/2 or more. 2. The silicon nitride ceramic substrate according to claim 1, wherein the silicon nitride ceramic substrate comprises a silicon nitride crystal and a grain boundary phase, and a ratio of a crystal compound phase in the grain boundary phase to the whole grain boundary phase is 20% or more. Semiconductor module. 2. The semiconductor module according to claim 1, wherein the silicon nitride ceramic substrate contains a rare earth element in an amount of 2.0 to 17.5% by mass in terms of an oxide. The semiconductor module according to claim 1, wherein the silicon nitride ceramic substrate has a thermal conductivity of 90 W / m · K or more. The semiconductor module according to claim 1, wherein the silicon nitride ceramic substrate contains 0.3 to 3.0 mass% of Mg in terms of MgO. The silicon nitride ceramic substrate contains at least one selected from the group consisting of Ti, Zr, W, Mo, Ta, Nb, V, and Cr in an amount of 2% by mass or less in terms of oxide. The semiconductor module according to claim 1. Electronic apparatus, characterized in that mounting the semiconductor module according to any one of claims 1 to 7.

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