JP5166946B2 - ソースガス供給装置及び方法 - Google Patents
ソースガス供給装置及び方法 Download PDFInfo
- Publication number
- JP5166946B2 JP5166946B2 JP2008099128A JP2008099128A JP5166946B2 JP 5166946 B2 JP5166946 B2 JP 5166946B2 JP 2008099128 A JP2008099128 A JP 2008099128A JP 2008099128 A JP2008099128 A JP 2008099128A JP 5166946 B2 JP5166946 B2 JP 5166946B2
- Authority
- JP
- Japan
- Prior art keywords
- source material
- source
- unit
- gas supply
- source gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
30 ソース物質蒸発部
40 ソース物質供給管
50 搬送ガス供給部
100 ソースガス供給装置
Claims (7)
- 化学蒸着法による薄膜蒸着時に使用されるソースガス供給装置であって、
ソースガスの原料であるソース物質を貯蔵するソース物質貯蔵部と、
前記ソース物質を加熱してソースガスを生成するソース物質蒸発部であって、該ソース物質蒸発部に流入したソース物質を均一に分散させる手段である円錐形状部を備え、前記ソース物質は、加熱によりソースガス化される前は固体である、該ソース物質蒸発部と、
前記ソース物質貯蔵部に貯蔵されているソース物質を前記ソース物質蒸発部に供給するソース物質供給管であって、該ソース物質供給管の前記ソース物質蒸発部内の出口は、前記円錐形状部の頂点に対向する、該ソース物質供給管と、
前記ソース物質供給管の経路上に設けられ、前記ソース物質蒸発部に、次の化学蒸着工程で使用される量のソース物質が供給されるように制御するソース物質制御部とを備え、これによって次の化学蒸着工程が終わると、前記ソース物質蒸発部内のソース物質はすべてソースガス化されることを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置であって、
前記ソース物質蒸発部は、ヒーターを含むことを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置であって、
前記ソース物質制御部は、1バッチの化学蒸着工程に必要な量だけのソース物質が前記ソース物質蒸発部に供給されるよう制御することを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置であって、
前記ソース物質制御部は、2バッチ以上の複数バッチの化学蒸着工程に必要な量だけのソース物質が前記ソース物質蒸発部に供給されるよう制御することを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置であって、
前記ソース物質蒸発部は、前記ソース物質供給管より低い位置に設けられることを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置であって、
前記ソースガスを蒸着チャンバーに搬送する搬送ガスを供給する搬送ガス供給部をさらに含むことを特徴とするソースガス供給装置。 - 請求項1に記載のソースガス供給装置を使用してソースガスを供給する方法であって、
1バッチの化学蒸着工程に必要な量のソース物質だけを加熱して発生させたソースガスを蒸着チャンバーに供給することを特徴とするソースガス供給方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070043770A KR20080098277A (ko) | 2007-05-04 | 2007-05-04 | 소스가스 공급장치 및 방법 |
KR10-2007-0043770 | 2007-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008274430A JP2008274430A (ja) | 2008-11-13 |
JP5166946B2 true JP5166946B2 (ja) | 2013-03-21 |
Family
ID=40052750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008099128A Active JP5166946B2 (ja) | 2007-05-04 | 2008-04-07 | ソースガス供給装置及び方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5166946B2 (ja) |
KR (1) | KR20080098277A (ja) |
CN (1) | CN101298666B (ja) |
TW (1) | TWI383065B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102576665A (zh) * | 2009-08-26 | 2012-07-11 | 泰拉半导体株式会社 | 蒸镀气体供给装置 |
KR200460716Y1 (ko) * | 2009-12-23 | 2012-05-31 | 주식회사 테라세미콘 | 소스가스 공급장치 |
GB2486941C (en) * | 2010-12-08 | 2014-07-30 | Oc Oerlikon Balters Ag | Apparatus and method for depositing a layer onto asubstrate |
CN107686966B (zh) * | 2017-07-31 | 2019-09-24 | 武汉华星光电半导体显示技术有限公司 | 蒸镀装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1133390A (ja) * | 1997-07-17 | 1999-02-09 | Matsushita Electric Ind Co Ltd | 粉末原料気化装置 |
EP1211333A3 (en) * | 2000-12-01 | 2003-07-30 | Japan Pionics Co., Ltd. | Vaporizer for CVD apparatus |
JP2003197613A (ja) * | 2001-12-27 | 2003-07-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2005026599A (ja) * | 2003-07-01 | 2005-01-27 | Lintec Co Ltd | 液体気化供給器及びこれを用いた液体気化供給装置 |
-
2007
- 2007-05-04 KR KR1020070043770A patent/KR20080098277A/ko active Search and Examination
-
2008
- 2008-04-07 JP JP2008099128A patent/JP5166946B2/ja active Active
- 2008-04-28 CN CN2008100948314A patent/CN101298666B/zh not_active Expired - Fee Related
- 2008-05-02 TW TW097116189A patent/TWI383065B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101298666A (zh) | 2008-11-05 |
CN101298666B (zh) | 2012-05-30 |
TW200912033A (en) | 2009-03-16 |
JP2008274430A (ja) | 2008-11-13 |
TWI383065B (zh) | 2013-01-21 |
KR20080098277A (ko) | 2008-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6639580B2 (ja) | 蒸発器、堆積アレンジメント、堆積装置及びこれらを操作する方法 | |
JP5551336B2 (ja) | Oledの製造における有機材料の制御可能な供給 | |
JP2008190037A (ja) | ソースガス供給装置 | |
WO2013094680A1 (ja) | 基板処理装置、半導体装置の製造方法および気化装置 | |
JP2009084625A (ja) | 原料ガスの供給システム及び成膜装置 | |
JP5166946B2 (ja) | ソースガス供給装置及び方法 | |
JP2007507601A (ja) | Oledを製造するためのペレットを使用する蒸着源 | |
KR102137181B1 (ko) | 증착 배열체, 증착 장치 및 그의 동작 방법들 | |
JP6026333B2 (ja) | 成膜装置および成膜方法 | |
TWI568872B (zh) | 蒸鍍裝置 | |
TWI668316B (zh) | 在數個位置上被饋送稀釋用氣流的經調溫之進氣管 | |
KR20130046541A (ko) | 박막 증착 장치 및 이를 이용한 박막 증착 방법 | |
KR101334158B1 (ko) | 소스가스 공급장치 및 방법 | |
JP4989589B2 (ja) | ソースガス供給装置 | |
TW201333231A (zh) | 用於連續沉積薄膜的設備 | |
JP2005142355A (ja) | 基板処理装置及び半導体装置の製造方法 | |
TW202129056A (zh) | 半導體處理裝置、形成經汽化反應物之裝置及方法 | |
KR101028044B1 (ko) | 소스가스 공급장치 | |
JP5069164B2 (ja) | ソースガス供給装置 | |
KR20100105975A (ko) | 소스가스 공급방법 | |
KR100549090B1 (ko) | 유기물 기상 증착장치용 증발기구 | |
KR200460716Y1 (ko) | 소스가스 공급장치 | |
JP2012009744A (ja) | 基板処理装置 | |
JP2014110086A (ja) | 有機el素子の製造装置 | |
JP4903619B2 (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110426 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110719 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120309 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120515 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120907 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120919 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121218 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5166946 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |