JP5165925B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device having a sensor IC such as a Hall sensor.

  Sensor ICs such as Hall sensor ICs are generally well known and are used in a wide range of applications. An example of a conventional semiconductor device will be briefly described below.

  FIG. 2 is a schematic cross-sectional view showing a semiconductor device using a conventional sensor IC.

  On the insulating support substrate 101, a sensor IC 201 having a sensor region 301 is installed, and a large number of electrodes for electrical connection with the outside are formed although not shown. The sensor IC 201 is covered with a package mold resin 401.

  Here, it is known that when an IC chip is packaged with a mold resin, the resistance value fluctuates due to a piezo effect based on the generation of stress on the IC chip by the resin. Therefore, there is a problem that even if the IC characteristics are precisely adjusted before the packaging process, the expected characteristics cannot be obtained due to the characteristic variation after the packaging, and this problem becomes more prominent as the required accuracy becomes stricter.

  In order to solve this problem, there is a method in which the trimming electrode is connected to the IC package lead, and the trimming is electrically performed after packaging. In particular, a method called zener zapping, in which IC characteristics are trimmed by electrically short-circuiting a Zener diode and thereby adjusting a resistance value, is well known.

The probe is brought into contact with the externally extracted electrode, and a voltage higher than the breakdown voltage is applied to the Zener diode, so that the Zener diode is destroyed, short-circuited, and the resistance value is adjusted. Some examples have been proposed to devise a method for reducing the amount of the noise. (For example, refer to Patent Document 1).
JP-A-7-202122 (FIG. 1)

  However, it is easy to solve the problem that the IC characteristics fluctuate due to the piezo effect based on the stress generated on the IC chip by the resin when the IC chip is packaged with the mold resin as described above in accordance with the market demand. Rather, the zener zapping method aimed at solving this problem, and the idea of reducing the number of electrodes to be extracted to the outside in the same method have been devised, but it is necessary to take out the electrodes to the outside. In view of the demand for downsizing, there has been a strong demand for a semiconductor device that can suppress the characteristic change in the packaging process and can achieve the characteristic adjustment (trimming) with higher accuracy after the packaging process at low cost.

  In order to achieve the above object, according to the present invention, a semiconductor device is configured as follows.

  In a semiconductor device in which a sensor IC having at least a sensor region and a laser trimming fuse region for adjusting sensor characteristics is installed on a transparent insulating support substrate capable of transmitting light, the sensor IC includes a sensor region and a fuse region. The formed main surface is arranged toward the insulating support substrate side, and the insulating support substrate and the sensor region or a semiconductor device having a gap between the insulating support substrate and the fuse region is provided. The laser beam for laser trimming can be irradiated from the side. This makes it possible to perform fine characteristic adjustment (trimming) while using a smaller package without increasing the number of external terminals.

  Further, the insulating support substrate and the sensor IC are joined by an adhesive layer in a region excluding the sensor region and the fuse region, and there is a gap between the insulating support substrate and the sensor region or between the insulating support substrate and the fuse region. In order to reduce the stress propagation from the package.

  In addition, the gap between the insulating support substrate and the sensor region and the gap between the insulating support substrate and the fuse region are separated by the adhesive layer so that the melt during laser trimming adheres to the sensor region. The IC chip is prevented from peeling off.

  The sensor IC is a Hall sensor IC.

  Further, the sensor IC includes a MOS type transistor, and the fuse region and the gate region of the MOS type transistor are formed of the same material to simplify the IC manufacturing process.

  By these means, a semiconductor device having an inexpensive and small package and capable of adjusting (trimming) characteristics with high accuracy can be obtained.

  As described above, according to the present invention, a semiconductor device in which a sensor IC having at least a sensor region and a laser trimming fuse region for adjusting sensor characteristics is installed on a transparent insulating support substrate capable of transmitting light. The sensor IC is arranged with the main surface on which the sensor region and the fuse region are formed facing the insulating support substrate side, and between the insulating support substrate and the sensor region or between the insulating support substrate and the fuse region. By having an air gap, laser light for laser trimming can be irradiated from the insulating support substrate side. This makes it possible to perform fine characteristic adjustment (trimming) while using a smaller package without increasing the number of external terminals.

  By these means, a semiconductor device having an inexpensive and small package and capable of adjusting (trimming) characteristics with high accuracy can be obtained.

  FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.

  A sensor IC 201 having at least a sensor region 301 and a laser trimming fuse region 302 for adjusting sensor characteristics is formed on the transparent insulating support substrate 101 that can transmit laser light. The main surface is disposed with the insulating support substrate 101 side facing. With such a configuration, the fuse region 302 is selectively cut by irradiating the laser light for laser trimming from the transparent insulating substrate 101 side to the fuse region 302 after the packaging process. Trimming can be performed. This makes it possible to perform highly accurate adjustment by trimming while using a smaller package without increasing the number of external terminals.

  A package mold resin 401 is formed on the sensor IC 201.

  Here, the insulating support substrate 101 and the sensor IC 201 are joined by the spacer layer 110 in a region excluding the sensor region 301 and the fuse region 302, and the insulating support substrate 101 and the sensor region 301, or the insulating support substrate 101 and the fuse region. By adopting a structure having air gaps 120a and 120b between them and 302, stress propagation from the mold resin 401 for the package can be alleviated.

  Furthermore, the gap 120a between the insulating support substrate 101 and the sensor region 301 and the gap 120b between the insulating support substrate 101 and the fuse region 302 are separated from each other by the spacer layer 110, and the fuse is melted during laser trimming. An object or the like is prevented from adhering to the sensor region 301 to change the characteristics, or the sensor IC 201 from being peeled off.

  The spacer layer 110 may be an insulator or a conductor, and is bonded to the sensor IC 201 on the upper surface and bonded to the insulating support substrate 101 on the lower surface. It is also possible to use an adhesive or a paste for joining. Further, the entire spacer layer 110 may be formed of an adhesive or a paste. The stress applied to the sensor IC 201 from the spacer layer 110 is preferably small.

  Here, in the example of FIG. 1, it is assumed that the sensor IC 201 is a Hall sensor IC, but other sensor ICs may be used.

  Although not shown, the sensor IC 201 may include a MOS transistor. At this time, the fuse region 302 and the gate region of the MOS transistor are formed of the same material (for example, a polysilicon thin film). By doing so, there is no special increase in the IC manufacturing process, and an increase in manufacturing cost can be suppressed.

  As described above, according to the present invention, a semiconductor device having an inexpensive and small package and capable of adjusting (trimming) characteristics with high accuracy can be obtained.

It is typical sectional drawing which shows one Example of the semiconductor device of this invention. It is typical sectional drawing which shows the semiconductor device by the conventional sensor IC.

Explanation of symbols

101 Insulating support substrate 110 Spacer layer 120a, 120b Air gap 201 Sensor IC
301 Sensor region 302 Fuse region 401 Mold resin

Claims (5)

In a semiconductor device in which a sensor IC having at least a sensor region and a laser trimming fuse region for adjusting sensor characteristics is installed on an insulating support substrate capable of transmitting light, the sensor IC includes the sensor region and the fuse region. The insulating support substrate and the sensor IC are joined with a spacer layer in a region excluding the sensor region and the fuse region, and the insulating support substrate is formed. A semiconductor device having a gap between the substrate and the sensor region or between the insulating support substrate and the fuse region. The insulating support substrate and the air gap between the sensor area, the gap between the insulating support substrate and the fuse region, the semiconductor device according to claim 1, wherein it is separated by the spacer layer. The semiconductor device according to claim 1 or 2 wherein the spacer layer is characterized by comprising an adhesive or a paste.   The semiconductor device according to claim 1, wherein the sensor IC is a Hall sensor IC. In a semiconductor device in which a sensor IC having at least a sensor region and a laser trimming fuse region for adjusting sensor characteristics is installed on an insulating support substrate capable of transmitting light, the sensor IC includes a MOS transistor, The fuse region and the gate region of the MOS transistor are formed of the same material, and the main surface on which the sensor region and the fuse region are formed is disposed toward the insulating support substrate side, and the insulating support A semiconductor device having a gap between the substrate and the sensor region or between the insulating support substrate and the fuse region .

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