JP5155121B2 - Electronic material cleaner and cleaning method - Google Patents
Electronic material cleaner and cleaning method Download PDFInfo
- Publication number
- JP5155121B2 JP5155121B2 JP2008301806A JP2008301806A JP5155121B2 JP 5155121 B2 JP5155121 B2 JP 5155121B2 JP 2008301806 A JP2008301806 A JP 2008301806A JP 2008301806 A JP2008301806 A JP 2008301806A JP 5155121 B2 JP5155121 B2 JP 5155121B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- carbon atoms
- cleaning agent
- salt
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000012776 electronic material Substances 0.000 title claims description 53
- 238000004140 cleaning Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 32
- -1 alkali metal cation Chemical class 0.000 claims description 87
- 125000004432 carbon atom Chemical group C* 0.000 claims description 80
- 239000012459 cleaning agent Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 61
- 239000011521 glass Substances 0.000 claims description 47
- 239000003945 anionic surfactant Substances 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 150000001768 cations Chemical class 0.000 claims description 25
- 239000004480 active ingredient Substances 0.000 claims description 21
- 239000003513 alkali Substances 0.000 claims description 15
- 125000002947 alkylene group Chemical group 0.000 claims description 14
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 14
- 150000001336 alkenes Chemical class 0.000 claims description 10
- 125000000129 anionic group Chemical group 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 4
- 239000000344 soap Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 description 115
- 239000002253 acid Substances 0.000 description 32
- 239000002245 particle Substances 0.000 description 30
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 23
- 150000002430 hydrocarbons Chemical class 0.000 description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229920001577 copolymer Polymers 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 229910019142 PO4 Inorganic materials 0.000 description 11
- 150000001450 anions Chemical class 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000010452 phosphate Substances 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 10
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 10
- 239000003638 chemical reducing agent Substances 0.000 description 10
- 238000005187 foaming Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 229910021642 ultra pure water Inorganic materials 0.000 description 9
- 239000012498 ultrapure water Substances 0.000 description 9
- PRNCMAKCNVRZFX-UHFFFAOYSA-N 3,7-dimethyloctan-1-ol Chemical compound CC(C)CCCC(C)CCO PRNCMAKCNVRZFX-UHFFFAOYSA-N 0.000 description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- 229960005070 ascorbic acid Drugs 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 8
- NKBWMBRPILTCRD-UHFFFAOYSA-N 2-Methylheptanoic acid Chemical compound CCCCCC(C)C(O)=O NKBWMBRPILTCRD-UHFFFAOYSA-N 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 6
- 239000003599 detergent Substances 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- JWZZKOKVBUJMES-UHFFFAOYSA-N (+-)-Isoprenaline Chemical compound CC(C)NCC(O)C1=CC=C(O)C(O)=C1 JWZZKOKVBUJMES-UHFFFAOYSA-N 0.000 description 5
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 5
- QENRKQYUEGJNNZ-UHFFFAOYSA-N 2-methyl-1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CC(C)C(S(O)(=O)=O)NC(=O)C=C QENRKQYUEGJNNZ-UHFFFAOYSA-N 0.000 description 5
- MHPUGCYGQWGLJL-UHFFFAOYSA-N 5-methyl-hexanoic acid Chemical compound CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 5
- OEOIWYCWCDBOPA-UHFFFAOYSA-N 6-methyl-heptanoic acid Chemical compound CC(C)CCCCC(O)=O OEOIWYCWCDBOPA-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 5
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 5
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 5
- 125000001931 aliphatic group Chemical group 0.000 description 5
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 5
- 239000002518 antifoaming agent Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
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- 150000003014 phosphoric acid esters Chemical class 0.000 description 5
- QUCDWLYKDRVKMI-UHFFFAOYSA-M sodium;3,4-dimethylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1C QUCDWLYKDRVKMI-UHFFFAOYSA-M 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 4
- JIRHAGAOHOYLNO-UHFFFAOYSA-N (3-cyclopentyloxy-4-methoxyphenyl)methanol Chemical compound COC1=CC=C(CO)C=C1OC1CCCC1 JIRHAGAOHOYLNO-UHFFFAOYSA-N 0.000 description 4
- KEQGZUUPPQEDPF-UHFFFAOYSA-N 1,3-dichloro-5,5-dimethylimidazolidine-2,4-dione Chemical compound CC1(C)N(Cl)C(=O)N(Cl)C1=O KEQGZUUPPQEDPF-UHFFFAOYSA-N 0.000 description 4
- VQOXUMQBYILCKR-UHFFFAOYSA-N 1-Tridecene Chemical compound CCCCCCCCCCCC=C VQOXUMQBYILCKR-UHFFFAOYSA-N 0.000 description 4
- PJLHTVIBELQURV-UHFFFAOYSA-N 1-pentadecene Chemical compound CCCCCCCCCCCCCC=C PJLHTVIBELQURV-UHFFFAOYSA-N 0.000 description 4
- HFDVRLIODXPAHB-UHFFFAOYSA-N 1-tetradecene Chemical compound CCCCCCCCCCCCC=C HFDVRLIODXPAHB-UHFFFAOYSA-N 0.000 description 4
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 4
- YSEQNZOXHCKLOG-UHFFFAOYSA-N 2-methyl-octanoic acid Chemical compound CCCCCCC(C)C(O)=O YSEQNZOXHCKLOG-UHFFFAOYSA-N 0.000 description 4
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
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- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- OQNCIVCOTSERAJ-UHFFFAOYSA-N methyl(2,2,2-trihydroxyethyl)azanium;hydroxide Chemical compound [OH-].C[NH2+]CC(O)(O)O OQNCIVCOTSERAJ-UHFFFAOYSA-N 0.000 description 1
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- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
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- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
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- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
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- VOZKAJLKRJDJLL-UHFFFAOYSA-N tolylenediamine group Chemical group CC1=C(C=C(C=C1)N)N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
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- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
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- ITWYMSUCIBOHMJ-UHFFFAOYSA-N trihydroxy-(6-methyl-1,1-diphenylheptyl)-(6-methylheptyl)-lambda5-phosphane Chemical compound C=1C=CC=CC=1C(CCCCC(C)C)(P(O)(O)(O)CCCCCC(C)C)C1=CC=CC=C1 ITWYMSUCIBOHMJ-UHFFFAOYSA-N 0.000 description 1
- SUXIKHBBPQWLHO-UHFFFAOYSA-N trihydroxy-(8-methylnonyl)-(8-methyl-1-phenylnonyl)-lambda5-phosphane Chemical compound CC(C)CCCCCCCP(O)(O)(O)C(CCCCCCC(C)C)C1=CC=CC=C1 SUXIKHBBPQWLHO-UHFFFAOYSA-N 0.000 description 1
- PDSVZUAJOIQXRK-UHFFFAOYSA-N trimethyl(octadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)C PDSVZUAJOIQXRK-UHFFFAOYSA-N 0.000 description 1
- GLFDLEXFOHUASB-UHFFFAOYSA-N trimethyl(tetradecyl)azanium Chemical compound CCCCCCCCCCCCCC[N+](C)(C)C GLFDLEXFOHUASB-UHFFFAOYSA-N 0.000 description 1
- ZNEOHLHCKGUAEB-UHFFFAOYSA-N trimethylphenylammonium Chemical compound C[N+](C)(C)C1=CC=CC=C1 ZNEOHLHCKGUAEB-UHFFFAOYSA-N 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
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- QUEDXNHFTDJVIY-UHFFFAOYSA-N γ-tocopherol Chemical class OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1 QUEDXNHFTDJVIY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/04—Carboxylic acids or salts thereof
- C11D1/06—Ether- or thioether carboxylic acids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/143—Sulfonic acid esters
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/146—Sulfuric acid esters
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- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/34—Derivatives of acids of phosphorus
- C11D1/342—Phosphonates; Phosphinates or phosphonites
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/34—Derivatives of acids of phosphorus
- C11D1/345—Phosphates or phosphites
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
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Description
本発明は電子材料用洗浄剤及び洗浄方法に関する。更に詳しくはフラットパネルディスプレイ、フォトマスク、ハードディスク又は半導体の基板用として好適な洗浄剤及び洗浄方法に関する。 The present invention relates to a cleaning agent for electronic materials and a cleaning method. More particularly, the present invention relates to a cleaning agent and a cleaning method suitable for a flat panel display, a photomask, a hard disk, or a semiconductor substrate.
電子材料の洗浄技術において、製造時における基板上に残存する微量の有機物汚れやガラスカレット及び砥粒等の不純物が電子材料の性能や歩留まりに大きく影響するため、その管理が極めて重要になってきている。特に洗浄対象となる不純物がより微粒子(パーティクル)化してきており、今まで以上に界面へ付着し、残存しやすくなることから、高度洗浄技術の確立が急務となっている。このため、これらのパーティクルによる汚染を防止するために、界面活性剤を用いて、パーティクルの除去性を向上させる方法が提案されている(特許文献−1〜4参照)。 In electronic material cleaning technology, trace amounts of organic contaminants and glass cullet and abrasive impurities remaining on the substrate at the time of manufacturing greatly affect the performance and yield of electronic materials, so their management has become extremely important. Yes. In particular, the impurities to be cleaned are becoming finer (particles), and are more likely to adhere to the interface and remain than before, so the establishment of advanced cleaning technology is an urgent need. For this reason, in order to prevent the contamination by these particles, a method for improving particle removability using a surfactant has been proposed (see Patent Documents 1 to 4).
しかし、フラットパネルディスプレイ用、フォトマスク用、ハードディスク用及び半導体用のガラス又はシリコン基板製造工程において、マザーガラスから必要に応じて適切な大きさにガラス基板を切断する際に発生するガラスの切粉(通称ガラスカレット)や、クリーンルーム内に飛散している粉塵や加工油等の有機物汚れ、基板表面をテクスチャリングする工程の際に使用する研磨剤や研磨屑等が基板表面に強固に付着し、洗浄工程で十分に除去できないといった問題がある。
これらのガラスカレットや有機物汚れ、研磨剤及び研磨屑に代表されるパーティクルは、基板表面に強固に付着しているため、これらを十分に除去するためには、基板又は研磨剤表面を僅かにエッチングし、パーティクルを液中に分散させ、更に液中に分散したパーティクルを基板表面に再付着しないようにする必要がある。しかし、特許文献−1で提案されている洗浄剤は、アルキルグルコシド、グリセリルエーテル及び炭化水素を含有する洗浄剤であり、有機汚れに対する除去性は期待できるが、ガラスカレットの除去性が不十分であり、更にアルカリ剤を含有することによりエッチングによるパーティクル除去が期待できるが、洗浄後の基板表面が荒れるという問題がある。また、特許文献−2では、特定の非イオン性界面活性剤、特定のグリコールエーテル化合物及び炭化水素を含有する洗浄剤と、炭化水素、特定のグリコールエーテル、アニオン性界面活性剤及びジメチルスルホキシドを含有する洗浄剤が提案されているが、前者の洗浄剤は、パーティクル除去の性能を向上させるために非イオン性界面活性剤を使用しており、界面活性剤成分が電子材料表面に残りやすいためリンス性が悪く、歩留り率が低下するという問題があり、また、後者の洗浄剤は、浸透性向上を目的として平均炭素数10〜20のスルホコハク酸型アニオン性界面活性剤等を含有しており、パーティクルの除去性に改善は見られるものの、起泡性が非常に高く、また泡切れ性に乏しいため、ハンドリング性に問題がある。また、特許文献−3で提案されている洗浄剤はフッ化水素及びオゾンを溶存した洗浄剤であり、基板表面に強固に付着したパーティクルをエッチングにより除去する効果は期待できるが、フッ素イオンを含むため排水処理に多大なコストがかかること、強いエッチング性を制御できないため、洗浄時に基板の平坦性を損ねるという問題がある。また、特許文献−4で提案されている洗浄剤はアニオン性界面活性剤を用いることで、パーティクルの再付着防止効果はある程度改善できるもののエッチング性がほとんど無いため、パーティクル除去性が不十分であり、洗浄性が十分でないという問題がある。
Particles represented by these glass cullet, organic contaminants, abrasives and polishing debris are firmly attached to the substrate surface, so in order to remove them sufficiently, the substrate or abrasive surface is slightly etched. However, it is necessary to disperse the particles in the liquid and to prevent the particles dispersed in the liquid from reattaching to the substrate surface. However, the cleaning agent proposed in Patent Document-1 is a cleaning agent containing alkyl glucoside, glyceryl ether and hydrocarbon, and can be expected to remove organic stains, but the glass cullet removal is insufficient. In addition, it can be expected to remove particles by etching by containing an alkali agent, but there is a problem that the substrate surface after cleaning becomes rough. Patent Document 2 contains a cleaning agent containing a specific nonionic surfactant, a specific glycol ether compound and a hydrocarbon, and a hydrocarbon, a specific glycol ether, an anionic surfactant and dimethyl sulfoxide. The former cleaning agent uses a nonionic surfactant to improve the particle removal performance, and the surfactant component tends to remain on the surface of the electronic material. In addition, there is a problem that the yield rate is lowered, and the latter detergent contains a sulfosuccinic acid type anionic surfactant having an average carbon number of 10 to 20 for the purpose of improving permeability, Although there is an improvement in particle removability, there is a problem in handling properties because the foamability is very high and the foamability is poor. Further, the cleaning agent proposed in Patent Document 3 is a cleaning agent in which hydrogen fluoride and ozone are dissolved, and the effect of removing particles firmly attached to the substrate surface by etching can be expected, but it contains fluorine ions. For this reason, there is a problem that wastewater treatment is very expensive and strong etching properties cannot be controlled, so that the flatness of the substrate is impaired during cleaning. Further, the cleaning agent proposed in Patent Document 4 uses an anionic surfactant, and although the effect of preventing the reattachment of particles can be improved to some extent, there is almost no etching property, so that the particle removability is insufficient. There is a problem that the cleanability is not sufficient.
本発明の目的は、ガラス又はシリコン基板表面の平坦性を損ねることなく、優れたパーティクルの除去性を実現し、低起泡性かつ経時安定性に優れた電子材料用洗浄剤及び洗浄方法を提供することにある。 An object of the present invention is to provide a cleaning agent and a cleaning method for an electronic material that realizes excellent particle removability without impairing the flatness of the glass or silicon substrate surface, and has low foaming properties and excellent stability over time. There is to do.
本発明者らは、上記課題を解決するため鋭意検討した結果、本発明に至った。
すなわち本発明は、アニオン成分が一般式(1)で示されるアニオン性界面活性剤(A)と、炭素数6〜18のアルケン(B)と、アルカリ成分(C)とを含有してなり、有効成分濃度0.1〜15%における25℃でのpHが10〜14であることを特徴とする電子材料用洗浄剤及び該洗浄剤を用いる電子材料の洗浄方法である。
R1[−(OA1)a−Q- ]b (1)
[式中、R1は炭素数4〜10の炭化水素基、A1は炭素数2〜4のアルキレン基、Q-は−COO-、−OCH2COO-、−SO3 -、−OSO3 -又は−OPO2(OR2)-、R2は水素又は炭素数1〜10の炭化水素基、aは平均値であって0〜20、bは1〜6の整数、Q-が−COO-又は−SO3 -の場合aは0である。]
さらに、SP値が6〜13であり一般式(2)で示される有機溶剤(D)を含有する請求項1記載の電子材料用洗浄剤である。
R3[−(OA2)c−OH]d (2)
[式中、R3は炭素数6〜8の炭化水素基、A2は炭素数2〜4のアルキレン基、cは平均値であって0〜20、dは1〜6の整数である。]
As a result of intensive studies to solve the above problems, the present inventors have reached the present invention.
That is, the present invention comprises an anionic surfactant (A) represented by the general formula (1), an alkene (B) having 6 to 18 carbon atoms, and an alkali component (C) . A cleaning agent for electronic materials, wherein the pH at 25 ° C. at an active ingredient concentration of 0.1 to 15% is 10 to 14, and a cleaning method for electronic materials using the cleaning agent.
R 1 [- (OA 1) a -Q -] b (1)
[Wherein, R 1 is a hydrocarbon group having 4 to 10 carbon atoms, A 1 is an alkylene group having 2 to 4 carbon atoms, Q − is —COO − , —OCH 2 COO − , —SO 3 − , —OSO 3 - or -OPO 2 (oR 2) -, R 2 is hydrogen or a hydrocarbon group having 1 to 10 carbon atoms, a is 0 to 20 and an average value, b is an integer of 1 to 6, Q - is -COO - or -SO 3 - in the case a of zero. ]
Furthermore, it is a cleaning agent for electronic materials of Claim 1 which has an SP value of 6-13 and contains the organic solvent (D) shown by General formula (2).
R 3 [— (OA 2 ) c —OH] d (2)
[Wherein R 3 is a hydrocarbon group having 6 to 8 carbon atoms, A 2 is an alkylene group having 2 to 4 carbon atoms, c is an average value of 0 to 20, and d is an integer of 1 to 6. ]
本発明の電子材料用洗浄剤は、フラットパネルディスプレイ用、フォトマスク用、ハードディスク用及び半導体用のガラス又はシリコン基板製造工程において基板表面の平坦性を損ねることなく、適度にコントロールされたエッチング性を付与することで、強固に付着した微小なパーティクルを基板表面から脱離させ、更に脱離したパーティクルを洗浄剤中に安定に分散させることで、優れたパーティクルの除去性を実現し、低起泡性かつ経時安定性に優れ、製造時における歩留まり率の向上や短時間で洗浄が可能となる極めて効率的な高度洗浄を可能にする。 The cleaning agent for electronic materials of the present invention has an appropriately controlled etching property without impairing the flatness of the substrate surface in the glass or silicon substrate manufacturing process for flat panel displays, photomasks, hard disks and semiconductors. By applying, the fine particles that adhere firmly are desorbed from the substrate surface, and the desorbed particles are stably dispersed in the cleaning agent, realizing excellent particle removability and low foaming. It is highly efficient and stable over time, improving the yield rate during production and enabling highly efficient advanced cleaning that enables cleaning in a short time.
本発明におけるアニオン性界面活性剤(A)は、アニオン成分及びカチオン成分からなり、アニオン成分は、前記一般式(1)で示される。 The anionic surfactant (A) in the present invention comprises an anionic component and a cationic component, and the anionic component is represented by the general formula (1).
一般式(1)におけるR1は炭素数4〜10の炭化水素基であり、R1としては、例えば、炭素数4〜10の直鎖の脂肪族炭化水素基、炭素数4〜10の分岐の脂肪族炭化水素基及び炭素数6〜10の芳香族炭化水素基が挙げられる。
炭素数4〜10の直鎖の脂肪族炭化水素基としては、n−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基、n−ノニル基及びn−デシル基並びに炭素数2〜10のアルキレングリコール、グリセリン及びソルビトール等から水酸基を除いた残基等が挙げられる。
炭素数4〜10の分岐の脂肪族炭化水素基としては、イソ又はtert−ブチル基、イソ又はネオペンチル基、イソヘキシル基、イソヘプチル基、イソオクチル基、イソ又はsec−ノニル基、イソ又はsec−デシル基、1−エチルオクチル基及び一般式(3)で示される炭化水素基が挙げられる。
R 1 in the general formula (1) is a hydrocarbon group having 4 -10 atoms, as R 1, for example, linear aliphatic hydrocarbon group having 4 -10 carbons, branched number 4 -10 carbon An aliphatic hydrocarbon group and an aromatic hydrocarbon group having 6 to 10 carbon atoms.
Examples of the linear aliphatic hydrocarbon group having 4 to 10 carbon atoms include n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group and n-decyl. Examples thereof include a group and a residue obtained by removing a hydroxyl group from alkylene glycol having 2 to 10 carbon atoms, glycerin, sorbitol and the like.
Examples of the branched aliphatic hydrocarbon group having 4 to 10 carbon atoms include an iso or tert-butyl group, an iso or neopentyl group, an isohexyl group, an isoheptyl group, an isooctyl group, an iso or sec-nonyl group, an iso or sec-decyl group. , 1-ethyloctyl group and a hydrocarbon group represented by the general formula (3).
一般式(3)におけるR4及びR5の具体例としては、例えばメチル基、エチル基、n−又はイソプロピル基、イソ又はn−ブチル基、sec−、イソ−又はtert−ブチル基、n−ペンチル基、1−メチルブチル基、2−メチルブチル基、3−メチルブチル基、1,1−ジメチルプロピル基、1,2−ジメチルプロピル基、2,2−ジメチルプロピル基、n−ヘキシル基、1−メチルペンチル基、2−メチルペンチル基、3−メチルペンチル基、4−メチルペンチル基、1,1−ジメチルブチル基、1,2−ジメチルブチル基、1,3−ジメチルブチル基、2,2−ジメチルブチル基、2,3−ジメチルブチル基、3,3−ジメチルブチル基、1,1−ジメチル−2−メチルプロピル基、1−エチルブチル基、2−エチルブチル基、1−エチル−1−メチルプロピル基及び1−エチル−2−メチルプロピル基が挙げられる。 Specific examples of R 4 and R 5 in the general formula (3) include, for example, methyl group, ethyl group, n- or isopropyl group, iso or n-butyl group, sec-, iso- or tert-butyl group, n- Pentyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1,1-dimethylpropyl group, 1,2-dimethylpropyl group, 2,2-dimethylpropyl group, n-hexyl group, 1-methyl Pentyl group, 2-methylpentyl group, 3-methylpentyl group, 4-methylpentyl group, 1,1-dimethylbutyl group, 1,2-dimethylbutyl group, 1,3-dimethylbutyl group, 2,2-dimethyl Butyl, 2,3-dimethylbutyl, 3,3-dimethylbutyl, 1,1-dimethyl-2-methylpropyl, 1-ethylbutyl, 2-ethylbutyl, 1-ethyl Examples thereof include a til-1-methylpropyl group and a 1-ethyl-2-methylpropyl group.
炭素数6〜10の芳香族炭化水素基としては、一般式(4)で示される炭化水素基が挙げられる。
一般式(4)におけるR6としては、前記一般式(3)におけるR4及びR5として例示したアルキル基の内の炭素数1〜4のものが挙げられる。
Examples of the aromatic hydrocarbon group having 6 to 10 carbon atoms include a hydrocarbon group represented by the general formula (4).
Examples of R 6 in the general formula (4) include those having 1 to 4 carbon atoms among the alkyl groups exemplified as R 4 and R 5 in the general formula (3).
これらのR1の内、パーティクル除去性及び低起泡性の観点から好ましいのは、一般式(3)又は(4)で示される炭化水素基である。
Of these R 1 , hydrocarbon groups represented by the general formula (3) or (4) are preferable from the viewpoint of particle removability and low foaming property.
一般式(1)におけるA1は炭素数2〜4のアルキレン基であり、A1としては、エチレン基、1,2−又は1,3−プロピレン基及び1,2−、1,3−、2,3−又は1,4−ブチレン基が挙げられる。これらの内、経時安定性及び低起泡性の観点から好ましいのはエチレン基及び1,2−プロピレン基であり、A1は1種のアルキレン基の単独使用又は2種以上のアルキレン基の併用であってもよい。
(A1O)は、後述の通り、アルキレンオキサイド(以下、AOと略記)のアルキレンがA1であるものの付加反応により形成されるため、これらの付加物における付加モル数は分布を有している。従ってaは平均値で表され、通常0〜20であり、経時安定性の観点から好ましくは0〜10、更に好ましくは0〜5、特に好ましくは0である。
尚、(A1O)の形成に当たり、2種以上のAOを併用する場合は、ブロック付加(チップ型、バランス型及び活性セカンダリー型等)でもランダム付加でも両者の混合系[ランダム付加後にチップしたもの:分子中に任意に分布されたオキシエチレン鎖を0〜50 %(好ましくは5〜40%)有し、0〜30%(好ましくは5〜25%)のオキシエチレン鎖が分子末端にチップされたもの]でもよい。
上記及び以下において特に規定しない限り、%は重量%を表す。
A 1 in the general formula (1) is an alkylene group having 2 to 4 carbon atoms, and as A 1 , ethylene group, 1,2- or 1,3-propylene group and 1,2-, 1,3-, 2,3- or 1,4-butylene group may be mentioned. Of these, ethylene group and 1,2-propylene group are preferable from the viewpoint of stability over time and low foaming property, and A 1 is a single alkylene group or a combination of two or more alkylene groups. It may be.
As (A 1 O) is formed by the addition reaction of alkylene oxide (hereinafter abbreviated as AO) whose alkylene is A 1 as described later, the number of added moles in these adducts has a distribution. Yes. Accordingly, a is represented by an average value, and is usually 0 to 20, preferably 0 to 10, more preferably 0 to 5, particularly preferably 0 from the viewpoint of stability over time.
In addition, when two or more kinds of AO are used together in the formation of (A 1 O), both block addition (chip type, balance type, active secondary type, etc.) and random addition are mixed systems [chip after random addition. Things: 0 to 50% (preferably 5 to 40%) of oxyethylene chains arbitrarily distributed in the molecule, and 0 to 30% (preferably 5 to 25%) of oxyethylene chains at the end of the molecule It may be].
Unless otherwise specified above and below,% represents% by weight.
一般式(1)におけるQ-は−COO-、−OCH2COO-、−SO3 -、−OSO3 -又は−OPO2(OR2)-であり、洗浄剤リンス性の観点から、−OSO3 -及び−OPO2(OR2)-が好ましい。
尚、Q-が−COO-又は−SO3 -の場合は、前記aは0である。
R2は水素原子又は炭素数1〜10の炭化水素基であり、炭素数1〜10の炭化水素基としては、一般式(1)におけるR1で例示したものと同様のものが挙げられ、パーティクルの分散安定性の観点から好ましいのは、炭素数4〜10の炭化水素基であり、更に好ましいのは一般式(3)又は(4)で示される炭化水素基である。
一般式(1)におけるbは1〜6の整数であって、洗浄後の表面平坦性の観点から、1〜3が好ましく、更に好ましくは1である。
Q − in the general formula (1) is —COO − , —OCH 2 COO − , —SO 3 − , —OSO 3 — or —OPO 2 (OR 2 ) − , and from the viewpoint of detergent rinsing properties, —OSO 3 - and -OPO 2 (oR 2) - it is preferred.
Incidentally, Q - is -COO - or -SO 3 - in the case of the a is 0.
R 2 is a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, and examples of the hydrocarbon group having 1 to 10 carbon atoms include the same as those exemplified for R 1 in the general formula (1), From the viewpoint of dispersion stability of the particles, a hydrocarbon group having 4 to 10 carbon atoms is preferable, and a hydrocarbon group represented by the general formula (3) or (4) is more preferable.
In the general formula (1), b is an integer of 1 to 6, preferably 1 to 3, more preferably 1, from the viewpoint of surface flatness after washing.
アニオン性界面活性剤(A)を構成するアニオン成分の具体例としては、1−、2−又はtert−ブタノール、1−、2−又は3−ペンタノール、2−メチル−1−ブタノール、3−メチル−2−ブタノール、1−、2−又は3−ヘキサノール、2−メチル−1−ペンタノール、3−メチル−1−ペンタノール、4−メチル−2−ペンタノール、3,3−ジメチル−2−ブタノール、3−メチル−2−ペンタノール、1−、2−、3−又は4−ヘプタノール、2,4−ジメチル−3−ペンタノール、3−メチル−1−ヘキサノール、5−メチル−2−ヘキサノール、1−、2−、3−又は4−オクタノ−ル、6−メチル−2−ヘプタノール、2,2−ジメチル−3−ヘキサノール、2,5−ジメチル−3−ヘキサノール、2−エチル−1−ヘキサノール、5−メチル−2−ヘプタノール、5−メチル−3−ヘプタノール、6−メチル−3−ヘプタノール、2,2−ジメチル−3−ヘプタノール、1−、2−、3−、4−又は5−ノナノール、2−メチル−3−オクタノール、1−、2−、3−、4−又は5−デカノール、3,7−ジメチル−1−オクタノール、エチレングリコール、1,6−ヘキサンジオール、1,10−デカンジオール、グリセリン及びソルビトール等のアルコール並びにこれらの炭素数2〜4のAO(エチレンオキサイド、1,2−又は1,3−プロピレンオキサイド及び1,2−、1,3−、2,3−又は1,4−ブチレンオキサイド等)付加物(付加モル数1〜20)の硫酸エステル又はリン酸エステルからプロトンを除いたアニオン;2−メチルプロパン酸、2,2−ジメチルプロパン酸、ブタン酸、2−メチル又は3−メチルブタン酸、2−エチルブタン酸、2,3−ジメチル又は3,3−ジメチルブタン酸、2−エチル−3−メチルブタン酸、ペンタン酸、2−、3−又は4−メチルペンタン酸、2−又は3−エチルペンタン酸、2−n−プロピル又はイソプロピルペンタン酸、2,4−ジメチルペンタン酸、2,4,4−又は3,4,4−トリメチルペンタン酸、ヘキサン酸、2−、3−、4−又は5−メチルヘキサン酸、2−、3−又は4−エチルヘキサン酸、2−又は3−n−プロピルヘキサン酸、2−又は3−イソプロピルヘキサン酸、2,5−又は3,5−ジメチルヘキサン酸、2,5,5−又は3,5,5−トリメチルヘキサン酸、ヘプタン酸、2−、3−、4−、5−又は6−メチルへプタン酸、2−、3−、4−又は5−エチルヘプタン酸、2−、3−又は4−n−プロピルヘプタン酸、2−、−3又は4−イソプロピルヘプタン酸、2,6−又は3,6−ジメチルヘプタン酸、2,6,6−、2,4,6−又は3,6,6−トリメチルヘプタン酸、オクタン酸、2−、3−、4−、5−、6−又は7−メチルオクタン酸、2−、3−、4−、5−又は6−エチルオクタン酸、2,7−又は3,7−ジメチルオクタン酸、ノナン酸及び2−、3−、4−、5−、6−、7−又は8−メチルノナン酸からプロトンを除いたアニオン;1−メチルプロパンスルホン酸、1−メチルペンタンスルホン酸及び1−エチルブタンスルホン酸からプロトンを除いたアニオン;上記アルコール又はそれらの炭素数2〜4のAO付加物(付加モル数1〜20)と2−クロロ酢酸塩(カリウム塩又はナトリウム塩)との反応により得られるアルキルエーテルカルボン酸塩におけるアニオン;ベンゼンスルホン酸、トルエンスルホン酸、キシレンスルホン酸、クメンスルホン酸及び安息香酸からプロトンを除いたアニオン等が挙げられる。
Specific examples of anionic components constituting the anionic surfactant (A), 1-, 2- or tert- butanol, 1-, 2- or 3-pentanol, 2-methyl-1-butanol, 3- Methyl-2-butanol, 1-, 2- or 3-hexanol, 2-methyl-1-pentanol, 3-methyl-1-pentanol, 4-methyl-2-pentanol, 3,3-dimethyl-2 -Butanol, 3-methyl-2-pentanol, 1-, 2-, 3- or 4-heptanol, 2,4-dimethyl-3-pentanol, 3-methyl-1-hexanol, 5-methyl-2- Hexanol, 1-, 2-, 3- or 4-octanol, 6-methyl-2-heptanol, 2,2-dimethyl-3-hexanol, 2,5-dimethyl-3-hexanol, 2-ethyl-1 − Hexanol, 5-methyl-2-heptanol, 5-methyl-3-heptanol, 6-methyl-3-heptanol, 2,2-dimethyl-3-heptanol, 1-, 2-, 3-, 4- or 5- Nonanol, 2-methyl-3-octanol, 1-, 2-, 3-, 4- or 5-decanol, 3,7-dimethyl-1-octanol, ethylene glycol, 1,6-hexanediol, 1,10- Alcohols such as decanediol, glycerin and sorbitol and AO having 2 to 4 carbon atoms (ethylene oxide, 1,2- or 1,3-propylene oxide and 1,2-, 1,3-, 2,3- or 1,4-butylene oxide, etc.) anion obtained by removing proton from sulfate or phosphate ester of an adduct (addition mole number 1 to 20) ; Panic acid, 2,2-dimethylpropanoic acid, butanoic acid, 2-methyl or 3-methylbutanoic acid, 2-ethylbutanoic acid, 2,3-dimethyl or 3,3-dimethylbutanoic acid, 2-ethyl-3-methylbutanoic acid , Pentanoic acid, 2-, 3- or 4-methylpentanoic acid, 2- or 3-ethylpentanoic acid, 2-n-propyl or isopropylpentanoic acid, 2,4-dimethylpentanoic acid, 2,4,4- or 3,4,4-trimethylpentanoic acid, hexanoic acid, 2-, 3-, 4- or 5-methylhexanoic acid, 2-, 3- or 4-ethylhexanoic acid, 2- or 3-n-propylhexanoic acid 2-, 3-isopropylhexanoic acid, 2,5- or 3,5-dimethylhexanoic acid, 2,5,5- or 3,5,5-trimethylhexanoic acid, heptanoic acid, 2-, 3--4 -, 5- or 6-methylheptanoic acid, 2-, 3-, 4- or 5-ethylheptanoic acid, 2-, 3- or 4-n-propylheptanoic acid, 2-, -3 or 4-isopropylheptanoic acid, 2, 6- or 3,6-dimethylheptanoic acid, 2,6,6-, 2,4,6- or 3,6,6-trimethylheptanoic acid, octanoic acid, 2-, 3-, 4-, 5-, 6- or 7-methyloctanoic acid, 2-, 3-, 4-, 5- or 6-ethyloctanoic acid, 2,7- or 3,7-dimethyloctanoic acid, nonanoic acid and 2-, 3-, 4 -, 5-, 6-, 7- or 8-methylnonanoic acid with anion removed; proton with 1-methylpropanesulfonic acid, 1-methylpentanesulfonic acid and 1-ethylbutanesulfonic acid with proton removed; Alcohols or their C 2-4 A Anion in alkyl ether carboxylate obtained by reaction of adduct (addition mole number 1-20) with 2-chloroacetate (potassium salt or sodium salt); benzenesulfonic acid, toluenesulfonic acid, xylenesulfonic acid, cumene Examples include anions obtained by removing protons from sulfonic acid and benzoic acid.
これらのアニオン性界面活性剤(A)を構成するアニオン成分の内、パーティクル除去性及び低起泡性の観点から好ましいのは、1−ブタノール、2−エチル−1−ヘキサノール、3−メチル−1−ヘキサノール、3,7−ジメチル−1−オクタノール及びこれらの炭素数2〜4のAO(エチレンオキサイド、1,2−又は1,3−プロピレンオキサイド及び1,2−、1,3−、2,3−又は1,4−ブチレンオキサイド等)付加物(付加モル数1〜20)の硫酸エステル又はリン酸エステルからプロトンを除いたアニオン並びに2−エチルペンタン酸、2−n−プロピルペンタン酸、2−イソプロピルペンタン酸、2,4,4−又は3,4,4−トリメチルペンタン酸、2−メチルヘキサン酸、2−エチルヘキサン酸、2−n−プロピルヘキサン酸、2−イソプロピルヘキサン酸、2−メチルヘプタン酸、2−エチルヘプタン酸、2−メチルオクタン酸、ベンゼンスルホン酸、トルエンスルホン酸及びキシレンスルホン酸からプロトンを除いたアニオンであり、更に好ましいのは、2−エチル−1−ヘキサノール、3−メチル−1−ヘキサノール及び3,7−ジメチル−1−オクタノールの硫酸エステル又はリン酸エステルからプロトンを除いたアニオン並びに2−n−プロピルペンタン酸、2−イソプロピルペンタン酸、2,4,4−又は3,4,4−トリメチルペンタン酸、2−エチルヘキサン酸、2−メチルヘプタン酸、パラトルエンスルホン酸、オルトトルエンスルホン酸、メタキシレンスルホン酸及びパラキシレンスルホン酸からプロトンを除いたアニオンであり、特に好ましいのは、2−エチル−1−ヘキサノールの硫酸エステル又はリン酸エステルからプロトンを除いたアニオン並びにオクタン酸、パラトルエンスルホン酸及びメタキシレンスルホン酸からプロトンを除いたアニオンであり、最も好ましいのは、2−エチル−1−ヘキサノールの硫酸エステル、パラトルエンスルホン酸及びメタキシレンスルホン酸からプロトンを除いたアニオンである。 Among the anionic components constituting these anionic surfactants (A), 1-butanol, 2-ethyl-1-hexanol, 3-methyl-1 are preferable from the viewpoint of particle removability and low foaming property. -Hexanol, 3,7-dimethyl-1-octanol and their C2-4 AO (ethylene oxide, 1,2- or 1,3-propylene oxide and 1,2-, 1,3-, 2, 3- or 1,4-butylene oxide, etc.) an anion obtained by removing a proton from a sulfate ester or phosphate ester of an adduct (addition mole number 1 to 20), 2-ethylpentanoic acid, 2-n-propylpentanoic acid, 2 -Isopropylpentanoic acid, 2,4,4- or 3,4,4-trimethylpentanoic acid, 2-methylhexanoic acid, 2-ethylhexanoic acid, 2-n-propyl Xanic acid, 2-isopropylhexanoic acid, 2-methylheptanoic acid, 2-ethylheptanoic acid, 2-methyloctanoic acid, benzenesulfonic acid, toluenesulfonic acid and xylenesulfonic acid are anions obtained by removing protons, and more preferable. Is an anion obtained by removing a proton from 2-ethyl-1-hexanol, 3-methyl-1-hexanol and sulfate ester or phosphate ester of 3,7-dimethyl-1-octanol and 2-n-propylpentanoic acid, 2 -Isopropylpentanoic acid, 2,4,4- or 3,4,4-trimethylpentanoic acid, 2-ethylhexanoic acid, 2-methylheptanoic acid, paratoluenesulfonic acid, orthotoluenesulfonic acid, metaxylenesulfonic acid and para An anion obtained by removing a proton from xylene sulfonic acid, Preferred is an anion obtained by removing a proton from 2-ethyl-1-hexanol sulfate or phosphate, and an anion obtained by removing a proton from octanoic acid, paratoluenesulfonic acid and metaxylenesulfonic acid. Is an anion obtained by removing protons from 2-ethyl-1-hexanol sulfate, paratoluenesulfonic acid and metaxylenesulfonic acid.
本発明におけるアニオン性界面活性剤(A)を構成するカチオン成分としては、アルカリ金属カチオン、アルカリ土類金属カチオン、炭素数0〜25のアンモニウムカチオン、ヒドロキシルアミンにプロトンが付加したカチオン、炭素数1〜36の脂肪族アミンにプロトンが付加したカチオン、炭素数4〜10のアミジン化合物にプロトンが付加したカチオン、炭素数1〜23のアルカノールアミンにプロトンが付加したカチオン及び炭素数6〜20の芳香族又は芳香脂肪族アミンにプロトンが付加したカチオンが挙げられる。これらは単独で使用してもよいし、2種以上を併用してもよい。 As the cation component constituting the anionic surfactant (A) in the present invention, an alkali metal cation, an alkaline earth metal cation, an ammonium cation having 0 to 25 carbon atoms, a cation obtained by adding a proton to hydroxylamine, 1 carbon atom. A cation having a proton added to an aliphatic amine having ˜36, a cation having a proton added to an amidine compound having 4 to 10 carbon atoms, a cation having a proton added to an alkanolamine having 1 to 23 carbon atoms, and a fragrance having 6 to 20 carbon atoms And cations obtained by adding protons to aliphatic or araliphatic amines. These may be used alone or in combination of two or more.
アルカリ金属カチオンとしては、ナトリウムカチオン及びカリウムカチオン等が挙げられる。
アルカリ土類金属カチオンとしては、カルシウムカチオン及びマグネシウムカチオン等が挙げられる。
Examples of the alkali metal cation include a sodium cation and a potassium cation.
Examples of alkaline earth metal cations include calcium cations and magnesium cations.
炭素数0〜25のアンモニウムカチオンとしては、アンモニウム、テトラメチルアンモニウム、トリメチルビニルアンモニウム、トリメチルフェニルアンモニウム、ベンジルトリエチルアンモニウム、ドデシルトリメチルアンモニウム、テトラブチルアンモニウム、トリメチルテトラデシルアンモニウム、ベンジルトリブチルアンモニウム、テトラペンチルアンモニウム、エチルヘキサデシルジメチルアンモニウム及びオクタデシルトリメチルアンモニウム等が挙げられる。 Examples of the ammonium cation having 0 to 25 carbon atoms include ammonium, tetramethylammonium, trimethylvinylammonium, trimethylphenylammonium, benzyltriethylammonium, dodecyltrimethylammonium, tetrabutylammonium, trimethyltetradecylammonium, benzyltributylammonium, tetrapentylammonium, Examples include ethyl hexadecyldimethylammonium and octadecyltrimethylammonium.
炭素数1〜36の脂肪族アミンにプロトンが付加したカチオンにおける炭素数1〜36の脂肪族アミンとしては、炭素数1〜12のアルキルアミン、炭素数2〜6のアルキレンジアミン、炭素数3〜7の環状アミン、ポリ(n=2〜6)アルキレン(炭素数2〜6)ポリ(n=3〜7)アミン及びこれらの炭素数2〜4のAO(エチレンオキサイド、1,2−又は1,3−プロピレンオキサイド及び1,2−、1,3−、2,3−又は1,4−ブチレンオキサイド等)付加物等が挙げられる。
炭素数1〜12のアルキルアミンとしては、炭素数1〜6のモノアルキルアミン(メチルアミン、エチルアミン、プロピルアミン、イソプロピルアミン、ブチルアミン及びヘキシルアミン等)並びに炭素数2〜12のジアルキルアミン(ジメチルアミン、エチルメチルアミン、プロピルメチルアミン、ブチルメチルアミン、ジエチルアミン、プロピルエチルアミン、ジイソプロピルアミン及びジヘキシルアミン等)等が挙げられる。
炭素数2〜6のアルキレンジアミンとしては、エチレンジアミン、1,2−又は1,3−プロピレンジアミン、テトラメチレンジアミン、ペンタメチレンジアミン及びヘキサメチレンジアミン等が挙げられる。
炭素数3〜7の環状アミンとしては、シクロプロピルアミン、シクロヘキシルアミン、ピペリジン、ピペラジン、キヌクリジン、2−ピリジンアミン、cis−3−メチルシクロヘキシルアミン及び1,4−ジアザビシクロ[2.2.2]オクタン(DABCO)等が挙げられる。
ポリ(n=2〜6)アルキレン(炭素数2〜6)ポリ(n=3〜7)アミンとしては、ジエチレントリアミン、ジプロピレントリアミン、ジヘキシレントリアミン、トリエチレンテトラミン、テトラエチレンペンタミン、ペンタエチレンヘキサミン及びヘキサエチレンヘプタミン等が挙げられる。
As a C1-C36 aliphatic amine in the cation which added the proton to the C1-C36 aliphatic amine, C1-C12 alkylamine, C2-C6 alkylenediamine, C3-C3 7 cyclic amines, poly (n = 2-6) alkylene (2-6 carbon atoms) poly (n = 3-7) amines and their C2-4 AO (ethylene oxide, 1,2- or 1) , 3-propylene oxide and 1,2-, 1,3-, 2,3- or 1,4-butylene oxide) and the like.
Examples of the alkylamine having 1 to 12 carbon atoms include monoalkylamines having 1 to 6 carbon atoms (such as methylamine, ethylamine, propylamine, isopropylamine, butylamine and hexylamine) and dialkylamines having 2 to 12 carbon atoms (dimethylamine). Ethylmethylamine, propylmethylamine, butylmethylamine, diethylamine, propylethylamine, diisopropylamine and dihexylamine).
Examples of the alkylene diamine having 2 to 6 carbon atoms include ethylene diamine, 1,2- or 1,3-propylene diamine, tetramethylene diamine, pentamethylene diamine and hexamethylene diamine.
Examples of the cyclic amine having 3 to 7 carbon atoms include cyclopropylamine, cyclohexylamine, piperidine, piperazine, quinuclidine, 2-pyridineamine, cis-3-methylcyclohexylamine and 1,4-diazabicyclo [2.2.2] octane. (DABCO).
As poly (n = 2-6) alkylene (2-6 carbon atoms) poly (n = 3-7) amine, diethylenetriamine, dipropylenetriamine, dihexylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine And hexaethyleneheptamine.
炭素数4〜10のアミジン化合物にプロトンが付加したカチオンにおける炭素数4〜10のアミジン化合物としては、1,8−ジアザビシクロ[5.4.0]−7−ウンデセン(以下、DBUと略記)、1,5−ジアザビシクロ[4.3.0]−5−ノネン(以下、DBNと略記)、2−メチルイミダゾール、2−ブチルベンゾイミダゾール及び2−(4−チアゾリル)ベンズイミダゾール等が挙げられる。
As the amidine compound having 4 to 10 carbon atoms in the cation obtained by adding a proton to the amidine compound having 4 to 10 carbon atoms, 1,8-diazabicyclo [5.4.0] -7-undecene (hereinafter abbreviated as DBU), Examples include 1,5-diazabicyclo [4.3.0] -5-nonene (hereinafter abbreviated as DBN), 2-methylimidazole, 2-butylbenzimidazole, and 2- (4-thiazolyl) benzimidazole.
炭素数1〜23のアルカノールアミンにプロトンが付加したカチオンにおける炭素数1〜23のアルカノールアミンとしては、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、N−メチルジエタノールアミン、N,N−ジメチルエタノールアミン、N,N−ジエチルエタノールアミン、2−アミノ−2−メチル−1−プロパノール、N−(アミノエチル)エタノールアミン、2−(2−アミノエトキシ)エタノール及びこれらの炭素数2〜4のAO(エチレンオキサイド、1,2−又は1,3−プロピレンオキサイド及び1,2−、1,3−、2,3−又は1,4−ブチレンオキサイド等)付加物等が挙げられる。 Examples of the alkanolamine having 1 to 23 carbon atoms in the cation obtained by adding a proton to the alkanolamine having 1 to 23 carbon atoms include monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N, N-dimethylethanolamine, N , N-diethylethanolamine, 2-amino-2-methyl-1-propanol, N- (aminoethyl) ethanolamine, 2- (2-aminoethoxy) ethanol and their C2-4 AO (ethylene oxide) 1,2- or 1,3-propylene oxide and 1,2-, 1,3-, 2,3- or 1,4-butylene oxide) and the like.
炭素数6〜20の芳香族又は芳香脂肪族アミンにプロトンが付加したカチオンにおける炭素数6〜20の芳香族又は芳香脂肪族アミンとしては、アニリン、フェニレンジアミン、トリレンジアミン、メチレンジアニリン、ジフェニルエーテルジアミン、ナフタレンジアミン、アントラセンジアミン、ベンジルアミン、キシリレンジアミン及びこれらの炭素数2〜4のAO(エチレンオキサイド、1,2−又は1,3−プロピレンオキサイド及び1,2−、1,3−、2,3−又は1,4−ブチレンオキサイド等)付加物等が挙げられる。 Examples of the aromatic or araliphatic amine having 6 to 20 carbon atoms in the cation obtained by adding a proton to an aromatic or araliphatic amine having 6 to 20 carbon atoms include aniline, phenylenediamine, tolylenediamine, methylenedianiline, and diphenyl ether. Diamine, naphthalenediamine, anthracenediamine, benzylamine, xylylenediamine and their C2-4 AO (ethylene oxide, 1,2- or 1,3-propylene oxide and 1,2-, 1,3-, 2,3- or 1,4-butylene oxide and the like).
これらのカチオン成分の内、パーティクル除去性の観点から、アルカリ金属カチオン、炭素数1〜15の脂肪族アミンにプロトンが付加した1価のカチオン、炭素数4〜10のアミジン化合物にプロトンが付加したカチオン及び炭素数1〜15のアルカノールアミンにプロトンが付加した1価のカチオンが好ましく、更に好ましいのは、ナトリウムカチオン、カリウムカチオン並びにトリメチルアミン、DBU、DBN及びジエタノールアミンにプロトンが付加したカチオン、特に好ましいのは、ナトリウムカチオン、カリウムカチオン、DBUにプロトンが付加したカチオン及びジエタノールアミンにプロトンが付加したカチオンである。 Among these cation components, from the viewpoint of particle removability, an alkali metal cation, a monovalent cation obtained by adding a proton to an aliphatic amine having 1 to 15 carbon atoms, or a proton added to an amidine compound having 4 to 10 carbon atoms. A cation and a monovalent cation in which a proton is added to an alkanolamine having 1 to 15 carbon atoms are preferable, and a sodium cation, a potassium cation, and a cation in which a proton is added to trimethylamine, DBU, DBN, and diethanolamine are particularly preferable. Are a cation in which a proton is added to sodium cation, potassium cation, DBU, and a cation in which a proton is added to diethanolamine.
アニオン性界面活性剤(A)は、一般式(1)においてQ-が−COO-、−SO3 -、−OSO3 -又は−OPO2(OR2)-の場合、例えばアニオン成分とプロトンとからなる酸と、前記アルカリ金属カチオン、アルカリ土類金属カチオン若しくは炭素数0〜25のアンモニウムカチオンと水酸基アニオンからなるアルカリ性化合物又は前記炭素数1〜15のアミン若しくは炭素数2〜36の多価(2〜7価)アミンとの中和反応により製造することができる。中和反応の温度は通常10〜60℃、時間は通常30〜200分である。中和度は通常95〜100%であり、中和物のpH(中和物の5%水溶液)は通常7〜12である。 In the general formula (1), the anionic surfactant (A) is, for example, when Q − is —COO − , —SO 3 − , —OSO 3 — or —OPO 2 (OR 2 ) − , And an alkali compound composed of an acid consisting of an alkali metal cation, an alkaline earth metal cation or an ammonium cation having 0 to 25 carbon atoms and a hydroxyl anion, or an amine having 1 to 15 carbon atoms or a polyvalent having 2 to 36 carbon atoms ( It can be produced by a neutralization reaction with (2-7 valent) amine. The temperature of the neutralization reaction is usually 10 to 60 ° C., and the time is usually 30 to 200 minutes. The neutralization degree is usually 95 to 100%, and the pH of the neutralized product (5% aqueous solution of the neutralized product) is usually 7 to 12.
一般式(1)においてQ-が−OSO3 -又は−OPO2(OR2)-の場合、アニオン成分とプロトンとからなる酸は、例えば以下の(1)及び(2)の反応により製造できる。
(1)AOの付加反応
一般式(1)におけるR1に水酸基が置換した化合物の水酸基に炭素数2〜4のAOを通常の方法で付加させる。具体的には、上記水酸基含有化合物を加圧反応容器に仕込み、無触媒又は触媒の存在下(特にAO付加の後半の段階で)にAOを吹き込み、常圧又は加圧下に1段階又は多段階で反応を行なう。触媒としては、アルカリ触媒、例えばアルカリ金属(リチウム、ナトリウム、カリウム及びセシウム等)の水酸化物;酸[過ハロゲン酸(過塩素酸、過臭素酸及び過ヨウ素酸)、硫酸、燐酸及び硝酸等(好ましくは過塩素酸)]並びにこれらの塩[好ましくは 2価又は3価の金属(Mg、Ca、Sr、Ba、Zn、Co、Ni、Cu及びAl等)の塩]が挙げられる。
反応温度は通常50〜150℃、反応時間は通常2〜20時間である。
AO付加反応終了後は、必要により触媒を中和し吸着剤で処理して触媒を除去・精製することができる。
In the general formula (1), when Q − is —OSO 3 — or —OPO 2 (OR 2 ) — , an acid composed of an anionic component and a proton can be produced by, for example, the following reactions (1) and (2): .
(1) Addition reaction of AO AO having 2 to 4 carbon atoms is added to the hydroxyl group of the compound in which R 1 in R 1 in the general formula (1) is substituted by a usual method. Specifically, the hydroxyl group-containing compound is charged into a pressurized reaction vessel, AO is blown in the presence of no catalyst or catalyst (particularly in the latter half of the AO addition), and one or more stages under normal pressure or pressure. Perform the reaction at Examples of the catalyst include alkali catalysts such as alkali metal (lithium, sodium, potassium, cesium, etc.); acids [perhalogen acids (perchloric acid, perbromic acid and periodic acid), sulfuric acid, phosphoric acid, nitric acid, etc. (Preferably perchloric acid)] and salts thereof [preferably salts of divalent or trivalent metals (Mg, Ca, Sr, Ba, Zn, Co, Ni, Cu, Al, etc.)].
The reaction temperature is usually 50 to 150 ° C., and the reaction time is usually 2 to 20 hours.
After completion of the AO addition reaction, if necessary, the catalyst can be neutralized and treated with an adsorbent to remove and purify the catalyst.
(2)硫酸エステル化反応又はリン酸エステル化反応
一般式(1)におけるR1に水酸基が置換した化合物又は上記の(1)で得られたAO付加物の末端水酸基を硫酸エステル化又はリン酸エステル化することによって硫酸エステル化物又はリン酸エステル化物が得られる。
エステル化の方法としては、例えば(i)クロロスルホン酸を用いる方法、(ii)サルファンを用いる方法、(iii)スルファミン酸を用いる方法、(iv)硫酸を用いる方法、(v)リン酸を用いる方法等が挙げられる。(ii)のサルファンについては、乾燥窒素等で希釈して用いる。
反応温度は、(i)及び(ii)の場合は、通常−10〜70℃、好ましくは−5〜40℃である。(iii)、(iv)及び(v)の場合は、通常50〜150℃、好ましくは60〜130℃である。
エステル化反応の終点は、56100/(エステル化合物の分子量)で表される酸価(AV)が、理論値の70〜110%となる点であり、好ましくは80〜105%となる点である。
(2) Sulfate esterification reaction or phosphoric acid esterification reaction The terminal hydroxyl group of the compound in which R 1 in the general formula (1) is substituted with a hydroxyl group or the AO adduct obtained in the above (1) is sulfated or phosphoric acid. By esterification, a sulfated ester or a phosphate esterified product is obtained.
Examples of the esterification method include (i) a method using chlorosulfonic acid, (ii) a method using sulfane, (iii) a method using sulfamic acid, (iv) a method using sulfuric acid, and (v) phosphoric acid. The method to use etc. are mentioned. The sulfan (ii) is diluted with dry nitrogen or the like.
In the case of (i) and (ii), the reaction temperature is usually −10 to 70 ° C., preferably −5 to 40 ° C. In the case of (iii), (iv) and (v), it is usually 50 to 150 ° C, preferably 60 to 130 ° C.
The end point of the esterification reaction is that the acid value (AV) represented by 56100 / (molecular weight of the ester compound) is 70 to 110% of the theoretical value, preferably 80 to 105%. .
一般式(1)においてQ-が−SO3 -の場合、アニオン成分とプロトンとからなる酸は、例えばハロゲン化アルキル又はアルキル硫酸塩と亜硫酸アルカリを反応させる方法、発煙硫酸を用いて炭化水素を直接スルホン化する方法及び紫外線照射下で炭化水素に二酸化硫黄と塩素を反応させる方法等により製造することができる。 In the general formula (1), when Q − is —SO 3 — , an acid composed of an anionic component and a proton is obtained by reacting a hydrocarbon using, for example, a method of reacting an alkyl halide or alkyl sulfate with an alkali sulfite, or using fuming sulfuric acid. It can be produced by a direct sulfonation method and a method of reacting hydrocarbons with sulfur dioxide and chlorine under ultraviolet irradiation.
一般式(1)においてQ-が−COO-の場合、アニオン成分とプロトンとからなる酸は、例えば高圧分解法(8〜50気圧)又はトイッチェル分解法(トイッチェル分解剤及び少量の硫酸を添加して脂肪酸ピッチを除去する)による天然油脂の加水分解によって製造することができる。 In the general formula (1), when Q − is —COO − , an acid composed of an anionic component and a proton is, for example, a high pressure decomposition method (8 to 50 atm) or a Toichel decomposition method (a Toichel decomposition agent and a small amount of sulfuric acid are added). To remove the fatty acid pitch) by hydrolysis of natural fats and oils.
一般式(1)においてQ-が−OCH2COO-の場合、アニオン性界面活性剤(A)は、例えば一般式(1)におけるR1に水酸基が置換した化合物又は上記の(1)で得られたAO付加物とモノクロロ酢酸塩(ナトリウム塩及びカリウム塩等)とをアルカリ(水酸化ナトリウム及び水酸化カリウム等)の存在下でカルボキシメチル化することにより製造できる。 When Q − is —OCH 2 COO — in the general formula (1), the anionic surfactant (A) is obtained, for example, from the compound in which R 1 in the general formula (1) is substituted with a hydroxyl group or the above (1). The obtained AO adduct and monochloroacetate (such as sodium salt and potassium salt) can be produced by carboxymethylation in the presence of alkali (such as sodium hydroxide and potassium hydroxide).
本発明におけるアルケン(B)としては、炭素数6〜18のアルケンが挙げられる。 The alkene (B) in the present invention include alkenyl emissions having 6 to 18 carbon atoms.
炭素数6〜18のアルケンとしては、炭素数6〜18の直鎖又は分岐のアルケンが挙げられ、具体的には、1−ヘキセン、2−ヘプテン、3−オクテン、4-ノネン、5−デセン、1−ウンデセン、1−ドデセン、1−トリデセン、1−テトラデセン、1−ペンタデセン、1−ヘキサデセン、1−ヘプタデセン、1−オクタデセン、ブチレンダイマー、ブチレントリマー、ブチレンテトラマー、イソブチレントリマー、プロピレンダイマー、プロピレントリマー、プロピレンテトラマー及びプロピレンペンタマー等が挙げられる。 Examples of the alkene having 6 to 18 carbon atoms include linear or branched alkenes having 6 to 18 carbon atoms, and specifically include 1-hexene, 2-heptene, 3-octene, 4-nonene, and 5-decene. 1-undecene, 1-dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, 1-hexadecene, 1-heptadecene, 1-octadecene, butylene dimer, butylene trimer, butylene tetramer, isobutylene trimer, propylene dimer, propylene trimer , Propylene tetramer, propylene pentamer and the like.
一般式(2)におけるR3は有機物汚れ除去性能の観点から水素又は炭素数6〜8の炭化水素基が好ましい。
炭素数6〜8の炭化水素基としては、前記一般式(1)におけるR1として例示した炭化水素基のうちの炭素数6〜8の炭化水素基が挙げられる。
R 3 in the general formula (2) is preferably hydrogen or a hydrocarbon group having 6 to 8 carbon atoms from the viewpoint of organic dirt removing performance.
Examples of the hydrocarbon group having 6 to 8 carbon atoms include hydrocarbon groups having 6 to 8 carbon atoms among the hydrocarbon groups exemplified as R 1 in the general formula (1).
一般式(2)におけるA2は炭素数2〜4のアルキレン基(エチレン基、1,2−又は1,3−プロピレン基及び1,2−、1,3−、2,3−又は1,4−ブチレン基等)であって、経時安定性及び低起泡性の観点から好ましいのはエチレン基及び1,2−プロピレン基であり、A2は1種のアルキレン基の単独使用又は2種以上のアルキレン基の併用であってもよい。
(A2O)は、一般式(1)における(A1O)と同様に形成されるため、その付加モル数は分布を有している。従ってcは平均値で表され、通常0〜20であり、経時安定性の観点から好ましくは0〜10である。
A 2 in the general formula (2) is an alkylene group having 2 to 4 carbon atoms (ethylene group, 1,2- or 1,3-propylene group and 1,2-, 1,3-, 2,3- or 1, 4-butylene group and the like, and from the viewpoint of stability over time and low foaming property, ethylene group and 1,2-propylene group are preferable, and A 2 is a single type of alkylene group or two types of A group. A combination of the above alkylene groups may be used.
Since (A 2 O) is formed in the same manner as (A 1 O) in general formula (1), the number of added moles has a distribution. Therefore, c is represented by an average value and is usually 0 to 20, and preferably 0 to 10 from the viewpoint of stability over time.
一般式(2)におけるdは1〜6の整数であって、洗浄後のリンス性の観点から、好ましくは1〜3、更に好ましくは1である。 D in the general formula (2) is an integer of 1 to 6, and is preferably 1 to 3, and more preferably 1 from the viewpoint of rinsing properties after washing.
一般式(2)で示される有機溶剤の具体例としては、2−エチルヘキサノール、ヘキシルカルビトール等が挙げられる。
Specific examples of the organic solvent represented by the general formula (2) include 2-ethylhexanol and hexyl carbitol.
有機溶剤(B)の内、パーティクル除去性の観点から好ましいものは、1−ドデセン、1−トリデセン、1−テトラデセン、1−ペンタデセン、イソブチレントリマー、プロピ
レンテトラマー、プロピレンペンタマー、2−エチルヘキサノール、ヘキシルカルビトールであり、更に好ましいものは1−ドデセン、イソブチレントリマー、プロピレンテトラマー、プロピレンペンタマー、ヘキシルカルビトールである。
Among the organic solvents (B), preferred from the viewpoint of particle removability are 1-dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, isobutylene trimer, propylene tetramer, propylene pentamer, 2-ethylhexanol, hexyl. Carbitol, and more preferred are 1-dodecene, isobutylene trimer, propylene tetramer, propylene pentamer, and hexyl carbitol.
炭素数6〜18のアルケン(B)及び一般式(2)で示される有機溶剤(D)の内の1種を単独で用いてもよいし、2種以上を併用してもよい。 One of the alkene (B) having 6 to 18 carbon atoms and the organic solvent (D) represented by the general formula (2) may be used alone, or two or more thereof may be used in combination.
有機溶剤(D)のSP値は、通常6〜13であり、好ましくは7〜12、更に好ましくは8〜11である。SP値が6未満又は13を超えると有機汚れ除去性が悪くなる。
尚、SP値は、「Polymer Engineering and Science,Vol.14,No.2,p147〜154(1974)」に記載のFedors法によって計算される値である。
The SP value of the organic solvent (D) is usually 6 to 13, preferably 7 to 12, and more preferably 8 to 11. When the SP value is less than 6 or exceeds 13, the organic soil removability deteriorates.
The SP value is a value calculated by the Fedors method described in “Polymer Engineering and Science, Vol. 14, No. 2, p 147 to 154 (1974)”.
アルカリ成分(C)としては、アンモニア、ヒドロキシルアミン、第4級アンモニウムハイドロキサイド(C−1)、炭素数1〜36の脂肪族アミン(C−2)、無機アルカリ(C−3)、炭素数1〜23のアルカノールアミン(C−4)、炭素数4〜10のアミジン化合物(C−5)及びこれらの混合物が挙げられる。 As the alkali component (C), ammonia, hydroxylamine, quaternary ammonium hydroxide (C-1), aliphatic amine (C-2) having 1 to 36 carbon atoms, inorganic alkali (C-3), carbon A C1-C23 alkanolamine (C-4), C4-C10 amidine compound (C-5), and these mixtures are mentioned.
(C−1)としては、テトラメチルアンモニウムハイドロキサイド、エチルトリメチルアンモニウムハイドロキサイド、テトラエチルアンモニウムハイドロキサイド、トリエチルメチルアンモニウムハイドロキサイド、テトラプロピルアンモニウムハイドロキサイド、テトラブチルアンモニウムハイドロキサイド、テトラペンチルアンモニウムハイドロキサイド、テトラヘキシルアンモニウムハイドロキサイド、ヒドロキシエチルトリメチルアンモニウムハイドロキサイド、トリエチルヒドロキシエチルアンモニウムハイドロキサイド、ジヒドロキシエチルジメチルアンモニウムハイドロキサイド及びトリヒドロキシエチルメチルアンモニウムハイドロキサイド等が挙げられる。 (C-1) includes tetramethylammonium hydroxide, ethyltrimethylammonium hydroxide, tetraethylammonium hydroxide, triethylmethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetra Examples include pentylammonium hydroxide, tetrahexylammonium hydroxide, hydroxyethyltrimethylammonium hydroxide, triethylhydroxyethylammonium hydroxide, dihydroxyethyldimethylammonium hydroxide, and trihydroxyethylmethylammonium hydroxide.
(C−2)としては、前記アニオン性界面活性剤(A)を構成するカチオン成分の記載において例示した炭素数1〜36の脂肪族アミンと同様のものが挙げられる。 As (C-2), the same thing as the C1-C36 aliphatic amine illustrated in description of the cation component which comprises the said anionic surfactant (A) is mentioned.
(C−3)としては、水酸化リチウム、水酸化ナトリウム、水酸化カリウム、水酸化カルシウム及び水酸化マグネシウム等が挙げられる。 Examples of (C-3) include lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, and magnesium hydroxide.
(C−4)としては、前記アニオン性界面活性剤(A)を構成するカチオン成分の記載において例示した炭素数1〜23のアルカノールアミンと同様のものが挙げられる。 As (C-4), the same thing as the C1-C23 alkanolamine illustrated in the description of the cation component which comprises the said anionic surfactant (A) is mentioned.
(C−5)としては、前記アニオン性界面活性剤(A)を構成するカチオン成分の記載において例示した炭素数4〜10のアミジン化合物と同様のものが挙げられる。 As (C-5), the same thing as the C4-C10 amidine compound illustrated in the description of the cation component which comprises the said anionic surfactant (A) is mentioned.
(C)の内、エッチング性及び洗浄後の水の接触角(リンス性)の観点から、(C−2)、(C−3)、(C−4)、(C−5)及びこれらの混合物が好ましく、更に好ましいのは水酸化カリウム、水酸化ナトリウム、DBU、ブチルアミン、ヘキシルアミン、シクロヘキシルアミン、トリエタノールアミン、N−メチルジエタノールアミン、シクロヘキシルアミンエチレンオキサイド(2モル)付加物、シクロヘキシルアミンプロピレンオキサイド(2モル)付加物、N,N−ジメチルエタノールアミン、トリエタノールアミンエチレンオキサイド(5モル)付加物、トリエタノールアミンプロピレンオキサイド(5モル)付加物、N,N−ジメチルエタノールアミンエチレンオキサイド(3モル)付加物、N,N−ジメチルエタノールアミンエチレンオキサイド(3モル)付加物及びこれらの混合物である。 Among (C), (C-2), (C-3), (C-4), (C-5), and these from the viewpoint of the etching property and the contact angle (rinse property) of water after cleaning. Mixtures are preferred, and potassium hydroxide, sodium hydroxide, DBU, butylamine, hexylamine, cyclohexylamine, triethanolamine, N-methyldiethanolamine, cyclohexylamine ethylene oxide (2 mol) adduct, cyclohexylamine propylene oxide are more preferred. (2 mol) adduct, N, N-dimethylethanolamine, triethanolamine ethylene oxide (5 mol) adduct, triethanolamine propylene oxide (5 mol) adduct, N, N-dimethylethanolamine ethylene oxide (3 Mol) Adduct, N, N-dimethylethanol Emissions of ethylene oxide (3 mol) adducts, and mixtures thereof.
本発明の電子材料用洗浄剤は、更に以下の高分子型分散剤(D)及びキレート剤(E)からなる群から選ばれる1種以上を含有することができる。 The electronic material cleaning agent of the present invention may further contain one or more selected from the group consisting of the following polymer dispersant (D) and chelating agent (E).
本発明の電子材料用洗浄剤は、高分子型分散剤(D)を含有することにより、パーティクルの分散性及び再汚染防止性が更に向上する。 The detergent for electronic materials of this invention contains a polymer type dispersing agent (D), and further improves the dispersibility of particles and the prevention of recontamination.
(D)としては、重量平均分子量(以下、Mwと略記)が2,500〜800,000であるスルホン酸(塩)基を有する高分子型アニオン性界面活性剤(D−1)、硫酸エステル(塩)基を有する高分子型アニオン性界面活性剤(D−2)、リン酸エステル(塩)基を有する高分子型アニオン性界面活性剤(D−3)、ホスホン酸(塩)基を有する高分子型アニオン性界面活性剤(D−4)、カルボン酸(塩)基を有する高分子型アニオン性界面活性剤(D−5)並びに多糖類及びその誘導体(D−6)等が挙げらる。
(D)の具体例としては以下のものが挙げられる。
(D) is a polymer type anionic surfactant (D-1) having a sulfonic acid (salt) group having a weight average molecular weight (hereinafter abbreviated as Mw) of 2,500 to 800,000, sulfate ester A polymeric anionic surfactant (D-2) having a (salt) group, a polymeric anionic surfactant (D-3) having a phosphate ester (salt) group, and a phosphonic acid (salt) group. Polymer type anionic surfactant (D-4), polymer type anionic surfactant (D-5) having a carboxylic acid (salt) group, polysaccharides and derivatives thereof (D-6), and the like. Raru.
Specific examples of (D) include the following.
スルホン酸(塩)基を有する高分子型アニオン性界面活性剤(D−1):
ポリスチレンスルホン酸、スチレン/スチレンスルホン酸共重合体、ポリ[2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸]、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/スチレン共重合体、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/アクリルアミド共重合体、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/(メタ)アクリル酸共重合体、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/(メタ)アクリル酸/アクリルアミド共重合体、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/スチレン/アクリルアミド共重合体、2−(メタ)アクリロイルアミノ−2,2−ジメチルエタンスルホン酸/スチレン/(メタ)アクリル酸共重合体、ナフタレンスルホン酸ホルムアルデヒド縮合物、メチルナフタレンスルホン酸ホルムアルデヒド縮合物、ジメチルナフタレンスルホン酸ホルムアルデヒド縮合物、アントラセンスルホン酸ホルムアルデヒド縮合物、メラミンスルホン酸ホルムアルデヒド縮合物及びアニリンスルホン酸−フェノール−ホルムアルデヒド縮合物等並びにこれらの塩;
Polymeric anionic surfactant (D-1) having a sulfonic acid (salt) group:
Polystyrene sulfonic acid, styrene / styrene sulfonic acid copolymer, poly [2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid], 2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid / Styrene copolymer, 2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid / acrylamide copolymer, 2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid / (meth) acrylic acid co Polymer, 2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid / (meth) acrylic acid / acrylamide copolymer, 2- (meth) acryloylamino-2,2-dimethylethanesulfonic acid / styrene / Acrylamide copolymer, 2- (meth) acryloylamino-2,2-dimethyl eta Sulfonic acid / styrene / (meth) acrylic acid copolymer, naphthalene sulfonic acid formaldehyde condensate, methyl naphthalene sulfonic acid formaldehyde condensate, dimethyl naphthalene sulfonic acid formaldehyde condensate, anthracene sulfonic acid formaldehyde condensate, melamine sulfonic acid formaldehyde condensate And aniline sulfonic acid-phenol-formaldehyde condensates and the like and salts thereof;
硫酸エステル(塩)基を有する高分子型アニオン性界面活性剤(D−2):
ポリ[2−ヒドロキシエチル(メタ)アクリレート硫酸エステル]、2−ヒドロキシエチルアクリレート/2−ヒドロキシエチルアクリレート硫酸エステル共重合体、2−ヒドロキシエチルメタクリレート/2−ヒドロキシエチルメタクリレート硫酸エステル共重合体、ポリ[2−ヒドロキシエチル(メタ)アクリレート]の硫酸エステル化物、ポリ[(メタ)アクリロイルオキシポリオキシアルキレン硫酸エステル]、(メタ)アクリロイルオキシポリオキシアルキレン硫酸エステル/アクリル酸共重合体及びセルロース、メチルセルロース又はエチルセルロースの硫酸エステル化物等並びにこれらの塩;
Polymer type anionic surfactant (D-2) having a sulfate (salt) group:
Poly [2-hydroxyethyl (meth) acrylate sulfate], 2-hydroxyethyl acrylate / 2-hydroxyethyl acrylate sulfate copolymer, 2-hydroxyethyl methacrylate / 2-hydroxyethyl methacrylate sulfate copolymer, poly [ 2-hydroxyethyl (meth) acrylate] sulfated product, poly [(meth) acryloyloxypolyoxyalkylene sulfate], (meth) acryloyloxypolyoxyalkylene sulfate / acrylic acid copolymer and cellulose, methylcellulose or ethylcellulose Sulfates of these and their salts;
リン酸エステル(塩)基を有する高分子型アニオン性界面活性剤(D−3):
ポリ[2−ヒドロキシエチル(メタ)アクリレートリン酸エステル]、2−ヒドロキシエチルアクリレート/2−ヒドロキシエチルアクリレートリン酸エステル共重合体、2−ヒドロキシエチルメタクリレート/2−ヒドロキシエチルメタクリレートリン酸エステル共重合体、ポリ[2−ヒドロキシエチル(メタ)アクリレート]のリン酸エステル化物、ポリ[(メタ)アクリロイルオキシポリオキシアルキレンリン酸エステル]、(メタ)アクリロイルオキシポリオキシアルキレンリン酸エステル/アクリル酸共重合体及びセルロース、メチルセルロース又はエチルセルロースのリン酸エステル化物等並びにこれらの塩;
Polymeric anionic surfactant (D-3) having a phosphate ester (salt) group:
Poly [2-hydroxyethyl (meth) acrylate phosphate ester], 2-hydroxyethyl acrylate / 2-hydroxyethyl acrylate phosphate ester copolymer, 2-hydroxyethyl methacrylate / 2-hydroxyethyl methacrylate phosphate ester copolymer , Poly [2-hydroxyethyl (meth) acrylate] phosphoric acid ester, poly [(meth) acryloyloxypolyoxyalkylene phosphoric acid ester], (meth) acryloyloxy polyoxyalkylene phosphoric acid ester / acrylic acid copolymer And phosphoric acid ester of cellulose, methylcellulose or ethylcellulose, and salts thereof;
ホスホン酸(塩)基を有する高分子型アニオン性界面活性剤(D−4):
ポリ[(メタ)アクリロイルオキシエチルホスホン酸]、2−ヒドロキシエチルアクリレート/アクリロイルオキシエチルホスホン酸共重合体及び2−ヒドロキシエチルメタクリレート/メタクリロイルオキシエチルホスホン酸共重合体、ナフタレンホスホン酸ホルムアルデヒド縮合物、メチルナフタレンホスホン酸ホルムアルデヒド縮合物、ジメチルナフタレンホスホン酸ホルムアルデヒド縮合物、アントラセンホスホン酸ホルムアルデヒド縮合物及びアニリンホスホン酸−フェノール−ホルムアルデヒド縮合物等並びにこれらの塩;
Polymer type anionic surfactant (D-4) having a phosphonic acid (salt) group:
Poly [(meth) acryloyloxyethylphosphonic acid], 2-hydroxyethyl acrylate / acryloyloxyethylphosphonic acid copolymer and 2-hydroxyethyl methacrylate / methacryloyloxyethylphosphonic acid copolymer, naphthalenephosphonic acid formaldehyde condensate, methyl Naphthalene phosphonic acid formaldehyde condensate, dimethyl naphthalene phosphonic acid formaldehyde condensate, anthracene phosphonic acid formaldehyde condensate, aniline phosphonic acid-phenol-formaldehyde condensate and the like, and salts thereof;
カルボン酸(塩)基を有する高分子型アニオン性界面活性剤(D−5):
ポリ(メタ)アクリル酸、(メタ)アクリル酸−マレイン酸共重合体、(メタ)アクリル酸−イタコン酸共重合体、(メタ)アクリル酸−フマル酸共重合体、(メタ)アクリル酸/酢酸ビニル共重合体、2−ヒドロキシエチルメタクリレート/(メタ)アクリル酸共重合体、ポリ[2−ヒドロキシエチル(メタ)アクリレート]のカルボキシメチル化物、カルボキシメチルセルロース、カルボキシメチルメチルセルロース、カルボキシメチルエチルセルロース、安息香酸ホルムアルデヒド縮合物及び安息香酸−フェノール−ホルムアルデヒド縮合物等並びにこれらの塩;
Polymeric anionic surfactant (D-5) having a carboxylic acid (salt) group:
Poly (meth) acrylic acid, (meth) acrylic acid-maleic acid copolymer, (meth) acrylic acid-itaconic acid copolymer, (meth) acrylic acid-fumaric acid copolymer, (meth) acrylic acid / acetic acid Vinyl copolymer, 2-hydroxyethyl methacrylate / (meth) acrylic acid copolymer, carboxymethylated product of poly [2-hydroxyethyl (meth) acrylate], carboxymethylcellulose, carboxymethylmethylcellulose, carboxymethylethylcellulose, formaldehyde benzoate Condensates and benzoic acid-phenol-formaldehyde condensates and the like and salts thereof;
多糖類及びその誘導体(D−6):
ヒドロキシエチルセルロース、カチオン化セルロース、ヒドロキシメチルセルロース、ヒドロキシプロピルセルロース、グァーガム、カチオン化グァーガム、キサンタンガム、アルギン酸塩、カチオン化デンプン等、ポバール並びにリン酸エステル[フィチン酸、ジ(ポリオキシエチレン)アルキルエーテルリン酸及びトリ(ポリオキシエチレン)アルキルエーテルリン酸等]等;
等が挙げられる。
Polysaccharides and their derivatives (D-6):
Hydroxyethylcellulose, cationized cellulose, hydroxymethylcellulose, hydroxypropylcellulose, guar gum, cationized guar gum, xanthan gum, alginate, cationized starch, etc., poval and phosphate esters [phytic acid, di (polyoxyethylene) alkyl ether phosphate and Tri (polyoxyethylene) alkyl ether phosphoric acid etc.] etc .;
Etc.
(D)が塩を形成する場合の対イオンとしては特に限定無いが、例えばアルカリ金属塩(ナトリウム塩及びカリウム塩等)、アンモニウム塩、1級アミン塩(メチルアミン、エチルアミン及びブチルアミン等のアルキルアミン、モノエタノールアミン並びにグアニジン等)、2級アミン塩(ジメチルアミン、ジエチルアミン及びジブチルアミン等のジアルキルアミン並びにジエタノールアミン等)、3級アミン塩(トリメチルアミン、トリエチルアミン及びトリブチルアミン等のトリアルキルアミン、トリエタノールアミン、DBU、DBN並びにDABCO等)並びに第4級アンモニウム塩(テトラアルキルアンモニウム塩等)が挙げられる。 The counter ion when (D) forms a salt is not particularly limited, and examples thereof include alkali metal salts (sodium salt and potassium salt), ammonium salts, primary amine salts (alkylamines such as methylamine, ethylamine and butylamine). , Monoethanolamine and guanidine, etc.) Secondary amine salts (dialkylamines such as dimethylamine, diethylamine and dibutylamine, and diethanolamine) Tertiary amine salts (trialkylamines such as trimethylamine, triethylamine and tributylamine, triethanolamine) , DBU, DBN, DABCO, etc.) and quaternary ammonium salts (tetraalkylammonium salts, etc.).
(D)の内、パーティクルの分散性の観点から(D−1)及び(D−5)が好ましく、更に好ましいのは、ポリスチレンスルホン酸、スチレン/スチレンスルホン酸共重合体、ポリ(メタ)アクリル酸及び(メタ)アクリル酸−マレイン酸共重合体並びにこれらの塩、特に好ましいのは、ポリ(メタ)アクリル酸及び(メタ)アクリル酸−マレイン酸共重合体並びにこれらの塩である。 Among (D), (D-1) and (D-5) are preferable from the viewpoint of particle dispersibility, and polystyrene sulfonic acid, styrene / styrene sulfonic acid copolymer, and poly (meth) acrylic are more preferable. Acid and (meth) acrylic acid-maleic acid copolymers and salts thereof, particularly preferred are poly (meth) acrylic acid and (meth) acrylic acid-maleic acid copolymers and salts thereof.
(D)Mwは、パーティクルの再付着防止性及び低起泡性の観点等から、3,000〜400,000が好ましく、更にに好ましくは4,000〜80,000、特に好ましくは5,000〜40,000である。
本発明におけるMwは、ゲルパーミエーションクロマトグラフィーによって、ポリエチレンオキシドを基準物質として40℃で測定される[例えば、装置本体:HLC−8120(東ソー株式会社製)、カラム:東ソー株式会社製TSKgel α6000、G3000 PWXL、検出器:装置本体内蔵の示差屈折計検出器、溶離液:0.5%酢酸ソーダ・水/メタノール(体積比70/30)、溶離液流量:1.0ml/分、カラム温度:40℃、試料:0.25%の溶離液溶液、注入量:200μl、標準物質:東ソー株式会社社製TSK TANDARD POLYETHYLENE OXIDE、データ処理ソフト:GPC−8020modelII(東ソー株式会社製)]。
(D) Mw is preferably from 3,000 to 400,000, more preferably from 4,000 to 80,000, particularly preferably 5,000, from the viewpoint of preventing reattachment of particles and low foaming property. ~ 40,000.
Mw in the present invention is measured by gel permeation chromatography at 40 ° C. using polyethylene oxide as a reference material [for example, apparatus main body: HLC-8120 (manufactured by Tosoh Corporation), column: TSKgel α6000 manufactured by Tosoh Corporation, G3000 PWXL, detector: differential refractometer detector built in the apparatus body, eluent: 0.5% sodium acetate / water / methanol (volume ratio 70/30), eluent flow rate: 1.0 ml / min, column temperature: 40 ° C., sample: 0.25% eluent solution, injection amount: 200 μl, standard material: TSK TANDARD POLYETHYLENE OXIDE manufactured by Tosoh Corporation, data processing software: GPC-8020 model II (manufactured by Tosoh Corporation)].
本発明の電子材料用洗浄剤は、キレート剤(E)を含有することにより、基板のエッチング性を更にコントロールしやすくなり、パーティクルの分散安定性も更に向上する。 By containing the chelating agent (E), the cleaning material for electronic materials of the present invention can further control the etching property of the substrate and further improve the dispersion stability of the particles.
(E)としては、アミノポリカルボン酸(塩)(E−1)[例えば、エチレンジアミンテトラ酢酸(塩)(EDTA)、ジエチレントリアミンペンタ酢酸(塩)(DTPA)、トリエチレンテトラミンヘキサ酢酸(塩)(TTHA)、ヒドロキシエチルエチレンジアミン三酢酸(塩)(HEDTA)、ジヒドロキシエチルエチレンジアミン四酢酸(塩)(DHEDDA)、ニトリロ酸酢酸(塩)(NTA)、ヒドロキシエチルイミノ二酢酸(塩)(HIDA)、β−アラニンジ酢酸(塩)、アスパラギン酸ジ酢酸(塩)、メチルグリシンジ酢酸(塩)、イミノジコハク酸(塩)、セリンジ酢酸(塩)、ヒドロキシイミノジコハク酸(塩)、ジヒドロキシエチルグリシン(塩)、アスパラギン酸(塩)及びグルタミン酸(塩)];
ヒドロキシカルボン酸(塩)(E−2)[例えば、ヒドロキシ酢酸(塩)、酒石酸(塩)、クエン酸(塩)及びグルコン酸(塩)];
エーテルカルボン酸(塩)(E−3)[例えば、カルボキシメチルタルトロネート、カルボキシメチルオキシサクシネート、オキシジサクシネート、酒石酸モノサクシネート及び酒石酸ジサクシネート];
その他カルボン酸(塩)(E−4)[例えば、マレイン酸誘導体及びシュウ酸(塩)];
ホスホン酸(塩)(E−5)[例えば、メタンジホスホン酸(塩)、アミノトリ(メチレンホスホン酸)(塩)、1−ヒドロキシエチリデン−1、1−ジホスホン酸(塩)、エチレンジアミンテトラ(メチレンホスホン酸)(塩)、ヘキサメチレンジアミンテトラ(メチレンホスホン酸)(塩)、プロピレンジアミンテトラ(メチレンホスホン酸)(塩)、ジエチレントリアミンペンタ(メチレンホスホン酸)(塩)、トリエチレンテトラミンヘキサ(メチレンホスホン酸)(塩)、トリアミノトリエチルアミンヘキサ(メチレンホスホン酸)(塩)、トランス−1、2−シクロヘキサンジアミンテトラ(メチレンホスホン酸)(塩)、グリコールエーテルジアミンテトラ(メチレンホスホン酸)(塩)及びテトラエチレンペンタミンヘプタ(メチレンホスホン酸)(塩)];
縮合リン酸(塩)(E−6)[例えば、メタリン酸(塩)、トリポリリン酸(塩)及びヘキサメタリン酸(塩)];
等が挙げられる。
尚、(E)が塩を形成する場合の対イオンとしては、上述の高分子型分散剤(D)で例示したものが挙げられる。またこれらは単独で用いてもよいし、2種以上を併用してもよい。
(E) includes aminopolycarboxylic acid (salt) (E-1) [for example, ethylenediaminetetraacetic acid (salt) (EDTA), diethylenetriaminepentaacetic acid (salt) (DTPA), triethylenetetraminehexaacetic acid (salt) ( TTHA), hydroxyethylethylenediaminetriacetic acid (salt) (HEDTA), dihydroxyethylethylenediaminetetraacetic acid (salt) (DHEDDA), nitrilolic acid acetic acid (salt) (NTA), hydroxyethyliminodiacetic acid (salt) (HIDA), β -Alanine diacetate (salt), aspartate diacetate (salt), methylglycine diacetate (salt), iminodisuccinate (salt), serine diacetate (salt), hydroxyiminodisuccinate (salt), dihydroxyethylglycine (salt) , Aspartic acid (salt) and glutamic acid (salt)];
Hydroxycarboxylic acid (salt) (E-2) [e.g. hydroxyacetic acid (salt), tartaric acid (salt), citric acid (salt) and gluconic acid (salt)];
Ether carboxylic acids (salts) (E-3) [e.g. carboxymethyl tartronate, carboxymethyloxysuccinate, oxydisuccinate, tartaric acid monosuccinate and tartaric acid disuccinate];
Other carboxylic acids (salts) (E-4) [for example, maleic acid derivatives and oxalic acid (salts)];
Phosphonic acid (salt) (E-5) [for example, methanediphosphonic acid (salt), aminotri (methylenephosphonic acid) (salt), 1-hydroxyethylidene-1, 1-diphosphonic acid (salt), ethylenediaminetetra (methylene Phosphonic acid) (salt), hexamethylenediaminetetra (methylenephosphonic acid) (salt), propylenediaminetetra (methylenephosphonic acid) (salt), diethylenetriaminepenta (methylenephosphonic acid) (salt), triethylenetetramine hexa (methylenephosphone) Acid) (salt), triaminotriethylamine hexa (methylenephosphonic acid) (salt), trans-1,2-cyclohexanediaminetetra (methylenephosphonic acid) (salt), glycol etherdiaminetetra (methylenephosphonic acid) (salt) and Tetraethylenepentamine hepta Methylene phosphonic acid) (salt)];
Condensed phosphoric acid (salt) (E-6) [e.g., metaphosphoric acid (salt), tripolyphosphoric acid (salt) and hexametaphosphoric acid (salt)];
Etc.
In addition, what was illustrated by the above-mentioned polymeric dispersing agent (D) as a counter ion in case (E) forms a salt is mentioned. Moreover, these may be used independently and may use 2 or more types together.
(E)の内で基板のエッチング性コントロール及び洗浄性能の観点から好ましいのは、(E−1)、(E−2)、(E−4)、(E−5)及び(E−6)であり、更に好ましいのは(E−1)、(E−2)、(E−5)及び(E−6)、特に好ましいのはエチレンジアミンテトラ酢酸(塩)(EDTA)、ジエチレントリアミンペンタ酢酸(塩)(DTPA)、ジヒドロキシエチルエチレンジアミン四酢酸(塩)(DHEDDA)、アスパラギン酸ジ酢酸(塩)、アスパラギン酸(塩)、グルタミン酸(塩)、クエン酸(塩)、アミノトリ(メチレンホスホン酸)(塩)、1−ヒドロキシエチリデン−1、1−ジホスホン酸(塩)、エチレンジアミンテトラ(メチレンホスホン酸)(塩)、メタリン酸(塩)及びヘキサメタリン酸(塩)、とりわけ好ましいのはクエン酸(塩)、アミノトリ(メチレンホスホン酸)(塩)、1−ヒドロキシエチリデン−1、1−ジホスホン酸(塩)、エチレンジアミンテトラ(メチレンホスホン酸)(塩)及びヘキサメタリン酸(塩)である。 Of these, (E-1), (E-2), (E-4), (E-5) and (E-6) are preferable from the viewpoints of etching control and cleaning performance of the substrate. More preferred are (E-1), (E-2), (E-5) and (E-6), and particularly preferred are ethylenediaminetetraacetic acid (salt) (EDTA) and diethylenetriaminepentaacetic acid (salt). ) (DTPA), dihydroxyethylethylenediaminetetraacetic acid (salt) (DHEDDA), aspartic acid diacetic acid (salt), aspartic acid (salt), glutamic acid (salt), citric acid (salt), aminotri (methylenephosphonic acid) (salt) ), 1-hydroxyethylidene-1,1-diphosphonic acid (salt), ethylenediaminetetra (methylenephosphonic acid) (salt), metaphosphoric acid (salt) and hexametaphosphoric acid (salt), and Particularly preferred are citric acid (salt), aminotri (methylenephosphonic acid) (salt), 1-hydroxyethylidene-1, 1-diphosphonic acid (salt), ethylenediaminetetra (methylenephosphonic acid) (salt), and hexametaphosphoric acid (salt). ).
尚、本願発明のアニオン性界面活性剤(A)の内のシクロカルボン酸(塩)[例えば、ピロメリット酸(塩)、ベンゾポリカルボン酸(塩)及びシクロペンタンテトラカルボン酸(塩)]もキレート剤としての効果を有する。 Of the anionic surfactants (A) of the present invention, cyclocarboxylic acids (salts) [for example, pyromellitic acid (salt), benzopolycarboxylic acid (salt) and cyclopentanetetracarboxylic acid (salt)] are also included. Has an effect as a chelating agent.
本発明の電子材料用洗浄剤は、洗浄剤の効果を損なわない範囲において、更にその他の添加剤(F)を含有してもよい。(F)としては、還元剤、酸化防止剤、防錆剤、pH調整剤、緩衝剤、消泡剤、防腐剤及びハイドロトロープ剤等が挙げられる。 The electronic material cleaning agent of the present invention may further contain other additives (F) as long as the effect of the cleaning agent is not impaired. Examples of (F) include a reducing agent, an antioxidant, a rust inhibitor, a pH adjuster, a buffer agent, an antifoaming agent, a preservative, and a hydrotrope agent.
還元剤としては、炭素数6〜70のレダクトン類[例えば、L−アスコルビン酸(塩)、イソアスコルビン酸(塩)、5,6−アルキリデン−L−アスコルビン酸{5,6−イソプロピリデン−L−アスコルビン酸、5,6−(ブタン−2−イリデン)−L−アスコルビン酸及び5,6−(ペンタン−3−イリデン)−L−アスコルビン酸等}(塩)、L−アスコルビン酸−6−カルボン酸エステル(L−アスコルビン酸−6−酢酸エステル及びL−アスコルビン酸−6−プロパン酸エステル等)(塩)、アスコルビン酸硫酸エステル(塩)、アスコルビン酸リン酸エステル(塩)、アスコルビン酸グルコシド(塩)、アスコルビン酸イソパルミチン酸エステル(塩)、エリソルビン酸(塩)、エリソルビン酸リン酸エステル(塩)、エリソルビン酸パルミチン酸エステル(塩)及びテトライソパルミチン酸エリソビル(塩)];炭素数6〜9の芳香族アミン(p−フェニレンジアミン及びp−アミノフェノール等);炭素数6〜30のフェノール化合物[一価フェノール化合物{3−ヒドロキシフラボン及びトコフェロール(α−、β−、γ−、δ−、ε−又はη−トコフェロール)等}及びポリフェノール(3,4,5−トリヒドロキシ安息香酸、ピロカテコール、レゾルシノール、ヒドロキノン、ナフトレゾルシノール、ピロガロール及びフロログルシノール等)等];リン系還元剤 (トリス‐2‐カルボキシエチルホスフィン等);アルデヒド(ホルムアルデヒド、アセトアルデヒド、プロピオンアルデヒド及びビニルアルデヒド等);ボラン系錯体(ボラン−tert−ブチルアミン錯体、ボラン−N,N−ジエチルアニリン錯体及びボラン−トリメチルアミン錯体等);チオール系還元剤(L−システイン及びアミノエタンチオール等);ヒドロキシルアミン系還元剤(ヒドロキシルアミン及びジエチルヒドロキシルアミン等);無機還元剤[亜硫酸(塩)、二亜硫酸(塩)、亜ジチオン酸(塩)、チオ硫酸(塩)、ジチオン酸(塩)、ポリチオン酸(塩)、亜リン酸(塩)、亜リン酸水素酸(塩)、次亜リン酸(塩)、硫酸第1鉄、塩化第2スズ、水酸化シアノホウ素ナトリウム及び水酸化ホウ素ナトリウム等];等が挙げられる。 Examples of the reducing agent include reductones having 6 to 70 carbon atoms [for example, L-ascorbic acid (salt), isoascorbic acid (salt), 5,6-alkylidene-L-ascorbic acid {5,6-isopropylidene-L -Ascorbic acid, 5,6- (butan-2-ylidene) -L-ascorbic acid and 5,6- (pentane-3-ylidene) -L-ascorbic acid etc.} (salt), L-ascorbic acid-6 Carboxylic acid ester (L-ascorbic acid-6-acetic acid ester and L-ascorbic acid-6-propanoic acid ester etc.) (salt), ascorbic acid sulfuric acid ester (salt), ascorbic acid phosphoric acid ester (salt), ascorbic acid glucoside (Salt), ascorbic acid isopalmitate (salt), erythorbic acid (salt), erythorbic acid phosphate (salt), eryso Binic acid palmitic acid ester (salt) and tetraisopalmitic acid erythovir (salt)]; aromatic amines having 6 to 9 carbon atoms (such as p-phenylenediamine and p-aminophenol); phenol compounds having 6 to 30 carbon atoms [ Monohydric phenol compounds {3-hydroxyflavones and tocopherols (α-, β-, γ-, δ-, ε- or η-tocopherols)} and polyphenols (3,4,5-trihydroxybenzoic acid, pyrocatechol, Resorcinol, hydroquinone, naphthoresorcinol, pyrogallol, phloroglucinol, etc.]]; Phosphorus-based reducing agents (Tris-2-carboxyethylphosphine, etc.); Aldehydes (formaldehyde, acetaldehyde, propionaldehyde, vinylaldehyde, etc.); Borane complexes ( Boran-tert-buchi Amine complexes, borane-N, N-diethylaniline complexes and borane-trimethylamine complexes, etc.); thiol-based reducing agents (such as L-cysteine and aminoethanethiol); hydroxylamine-based reducing agents (such as hydroxylamine and diethylhydroxylamine); Inorganic reducing agent [sulfurous acid (salt), disulfurous acid (salt), dithionic acid (salt), thiosulfuric acid (salt), dithionic acid (salt), polythionic acid (salt), phosphorous acid (salt), phosphorous acid Hydroacid (salt), hypophosphorous acid (salt), ferrous sulfate, stannic chloride, sodium cyanoborohydride, sodium borohydride, and the like].
還元剤が塩を形成する場合の対イオンとしては、上述の高分子型分散剤(D)で例示したものと同様のものが使用できる。還元剤は単独で用いてもよいし、2種以上を併用してもよい。尚、前述のアルカリ成分(C)として例示した(C−2)、(C−4)及び(C−5)も還元剤としての効果を有する。 As the counter ion in the case where the reducing agent forms a salt, the same ions as those exemplified for the polymer dispersant (D) can be used. A reducing agent may be used independently and may use 2 or more types together. In addition, (C-2), (C-4) and (C-5) exemplified as the above-mentioned alkali component (C) also have an effect as a reducing agent.
酸化防止剤としては、フェノール系酸化防止剤(2,6−ジ−t−ブチルフェノール、2−t−ブチル−4−メトキシフェノール及び2,4−ジメチル−6−t−ブチルフェノール等)、アミン系酸化防止剤(モノオクチルジフェニルアミン、モノノニルジフェニルアミン等のモノアルキルジフェニルアミン;4,4’−ジブチルジフェニルアミン、4,4’−ジペンチルジフェニルアミン等のジアルキルジフェニルアミン;テトラブチルジフェニルアミン、テトラヘキシルジフェニルアミン等のポリアルキルジフェニルアミン;α−ナフチルアミン及びフェニル−α−ナフチルアミン等のナフチルアミン等)、硫黄系化合物[フェノチアジン、ペンタエリスリトール−テトラキス−(3−ラウリルチオプロピオネート)及びビス(3,5−tert−ブチル−4−ヒドロキシベンジル)スルフィド等]並びにリン系酸化防止剤[ビス(2,4−ジ−t−ブチルフェニル)ペンタエリスリトールジホスファイト、フェニルジイソデシルホスフィト、ジフェニルジイソオクチルホスファイト及びトリフェニルホスファイト等]等が挙げられる。 Antioxidants include phenolic antioxidants (2,6-di-t-butylphenol, 2-t-butyl-4-methoxyphenol and 2,4-dimethyl-6-t-butylphenol), amine-based oxidation Inhibitors (monoalkyldiphenylamines such as monooctyldiphenylamine and monononyldiphenylamine; dialkyldiphenylamines such as 4,4′-dibutyldiphenylamine and 4,4′-dipentyldiphenylamine; polyalkyldiphenylamines such as tetrabutyldiphenylamine and tetrahexyldiphenylamine; α Naphthylamine such as naphthylamine and phenyl-α-naphthylamine), sulfur compounds [phenothiazine, pentaerythritol-tetrakis- (3-laurylthiopropionate) and bis (3,5-t ert-butyl-4-hydroxybenzyl) sulfide etc.] and phosphorus antioxidants [bis (2,4-di-t-butylphenyl) pentaerythritol diphosphite, phenyldiisodecylphosphite, diphenyldiisooctylphosphite and Triphenyl phosphite etc.] and the like.
防錆剤としては、ベンゾトリアゾール、トリルトリアゾール、炭素数2〜10の炭化水素基を有するベンゾトリアゾール、ベンゾイミダゾール、炭素数2〜20炭化水素基を有するイミダゾール、炭素数2〜20炭化水素基を有するチアゾール及び2−メルカプトベンゾチアゾール等の含窒素有機防錆剤;ドデセニルコハク酸ハーフエステル、オクタデセニルコハク酸無水物及びドデセニルコハク酸アミド等のアルキル又はアルケニルコハク酸;ソルビタンモノオレエート、グリセリンモノオレエート及びペンタエリスリトールモノオレエート等の多価アルコール部分エステル等が挙げられる。これらは単独で用いてもよいし、2種以上を併用してもよい。 Examples of the rust preventive include benzotriazole, tolyltriazole, benzotriazole having 2 to 10 carbon atoms, benzimidazole, imidazole having 2 to 20 carbon atoms, and 2 to 20 hydrocarbon groups. Nitrogen-containing organic rust preventives such as thiazole and 2-mercaptobenzothiazole; alkyl or alkenyl succinic acids such as dodecenyl succinic acid half ester, octadecenyl succinic anhydride and dodecenyl succinic acid amide; sorbitan monooleate, glycerin monoole And polyhydric alcohol partial esters such as acrylate and pentaerythritol monooleate. These may be used alone or in combination of two or more.
pH調整剤としては、無機酸(塩酸、硫酸、硝酸及びスルファミン酸等)、有機酸(クエン酸、シュウ酸及び乳酸等)並びに上記で例示したアルカリ成分(C)等が挙げられ、これらは単独で用いてもよいし、2種以上を併用してもよい。 Examples of the pH adjuster include inorganic acids (hydrochloric acid, sulfuric acid, nitric acid, sulfamic acid, etc.), organic acids (citric acid, oxalic acid, lactic acid, etc.), and the alkali components (C) exemplified above, and these are used alone. It may be used in combination, or two or more may be used in combination.
緩衝剤としては、緩衝作用を有する炭素数1〜10の有機酸(酢酸、ギ酸、グルコン酸、グリコール酸、酒石酸、フマル酸、レブリン酸、吉草酸、マレイン酸及びマンデル酸等)、無機酸(リン酸及びホウ酸等)及びこれらの塩が挙げられる。尚、緩衝剤が塩を形成する場合の対イオンとしては、上述の高分子型分散剤(D)で例示したものと同様のものが挙げられる。これらは単独で用いてもよいし、2種以上を併用してもよい。 Examples of the buffer include organic acids having 1 to 10 carbon atoms having a buffering action (such as acetic acid, formic acid, gluconic acid, glycolic acid, tartaric acid, fumaric acid, levulinic acid, valeric acid, maleic acid and mandelic acid), inorganic acids ( Phosphoric acid and boric acid) and salts thereof. In addition, as a counter ion in case a buffer forms a salt, the thing similar to what was illustrated by the above-mentioned polymeric dispersing agent (D) is mentioned. These may be used alone or in combination of two or more.
消泡剤としては、シリコーン消泡剤(ジメチルシリコーン、フルオロシリコーン及びポリエーテルシリコーン等を構成成分とする消泡剤等)等が挙げられる。これらは単独で用いてもよいし、2種以上を併用してもよい。 Examples of the antifoaming agent include silicone antifoaming agents (such as antifoaming agents containing dimethyl silicone, fluorosilicone, polyether silicone, etc.). These may be used alone or in combination of two or more.
防腐剤としては、トリアジン誘導体[ヘキサヒドロ−1,3,5−トリス(2−ヒドロキシエチル)−S−トリアジン等]、イソチアゾリン誘導体(1,2−ベンズイソチアゾリン−3−オン、2−メチル−4−イソチアゾリン−3−オン及び5−クロロ−2−メチル−4−イソチアゾリン−3−オン等)、ピリジン誘導体[ピリジン2−ピリジンチオール−1−オキサイド(塩)等]、モルホリン誘導体[4−(2−ニトロブチル)モルホリン及び4,4−(2−エチル−2−ニトロトリメチレン)−ジモルホリン等]、ベンズイミダゾール誘導体[2−(4−チアゾリル)ベンズイミダゾール等]、ポリ[オキシエチレン(ジメチルイミノ)エチレン(ジメチルイミノ)エチレン]ジクロライド、p−クロロ−m−キシレノール、フェノキシエタノール、フェノキシプロパノール、アセトキシジメチルジオキサン、イソプロピルメチルフェノール、テトラクロロイソフタロニトリル、ビスブロモアセトキシエタン、3−ヨード−2−プロピニルブチルカーバメート及び2−ブロモ−2−ニトロプロパン−1,3−ジオール等が挙げられる。これらは単独で用いてもよいし、2種以上を併用してもよい。 Examples of preservatives include triazine derivatives [hexahydro-1,3,5-tris (2-hydroxyethyl) -S-triazine and the like], isothiazoline derivatives (1,2-benzisothiazolin-3-one, 2-methyl-4- Isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one), pyridine derivatives [pyridine 2-pyridinethiol-1-oxide (salts, etc.)], morpholine derivatives [4- (2- Nitrobutyl) morpholine and 4,4- (2-ethyl-2-nitrotrimethylene) -dimorpholine etc.], benzimidazole derivatives [2- (4-thiazolyl) benzimidazole etc.], poly [oxyethylene (dimethylimino) ethylene ( Dimethylimino) ethylene] dichloride, p-chloro-m-xylenol, phenol Siethanol, phenoxypropanol, acetoxydimethyldioxane, isopropylmethylphenol, tetrachloroisophthalonitrile, bisbromoacetoxyethane, 3-iodo-2-propynylbutylcarbamate, 2-bromo-2-nitropropane-1,3-diol, etc. Is mentioned. These may be used alone or in combination of two or more.
ハイドロトロープ剤としては、レゾルシン及びサリチル酸(塩)等が挙げられる。尚、ハイドロトロープ剤が塩を形成する場合の対イオンとしては、上述の(D)で例示したものと同様のものが挙げられる。これらは単独で用いてもよいし、2種以上を併用してもよい。尚、アニオン性界面活性剤(A)として例示したトルエンスルホン酸(塩)、キシレンスルホン酸(塩)、クメンスルホン酸(塩)及び安息香酸(塩)もハイドロトロープ剤としての効果を有する。 Examples of the hydrotrope include resorcin and salicylic acid (salt). In addition, as a counter ion in case a hydrotrope agent forms a salt, the thing similar to what was illustrated by the above-mentioned (D) is mentioned. These may be used alone or in combination of two or more. In addition, toluenesulfonic acid (salt), xylenesulfonic acid (salt), cumenesulfonic acid (salt) and benzoic acid (salt) exemplified as the anionic surfactant (A) also have an effect as a hydrotrope agent.
本発明の電子材料用洗浄剤は、上述の通り、アニオン性界面活性剤(A)、アルケン(B)並びに必要により、アルカリ成分(C)、高分子型分散剤(D)、キレート剤(E)及びその他の添加剤(F)を含有するが、更に水、特にイオン交換水(導電率0.2μS/cm以下)又は超純水(電気抵抗率18MΩ・cm以上)を含有してもよい。
本発明において有効成分とは水以外の成分を言う。
As described above, the detergent for electronic materials of the present invention comprises an anionic surfactant (A), an alkene (B), and, if necessary, an alkali component (C), a polymeric dispersant (D), a chelating agent (E ) And other additives (F), but may further contain water, particularly ion-exchanged water (conductivity: 0.2 μS / cm or less) or ultrapure water (electric resistivity: 18 MΩ · cm or more). .
In the present invention, the active ingredient means an ingredient other than water.
(A)の含有量は、パーティクル除去性及び低起泡性の観点から、電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは0.5〜80%、更に好ましくは1〜70%、特に好ましくは2〜60%、最も好ましくは5〜50%である。 The content of (A) is preferably 0.5 to 80%, more preferably 1 to 70% based on the weight of the active ingredient of the electronic material cleaning agent from the viewpoint of particle removability and low foaming property. Particularly preferred is 2 to 60%, and most preferred is 5 to 50%.
(B)の含有量は、パーティクル除去性の観点から、電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは1〜90%、更に好ましくは2〜80%、特に好ましくは5〜70%、最も好ましくは10〜60%である。 The content of (B) is preferably 1 to 90%, more preferably 2 to 80%, and particularly preferably 5 to 70, based on the weight of the active ingredient of the electronic material cleaning agent, from the viewpoint of particle removability. %, Most preferably 10-60%.
(C)の含有量は、エッチング性及びリンス性の観点から電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは1〜55%、更に好ましくは2〜50%、特に好ましくは5〜45%、最も好ましくは10〜40%である。 The content of (C) is preferably from 1 to 55%, more preferably from 2 to 50%, particularly preferably from 5 to 50% based on the weight of the active ingredient of the electronic material cleaning agent from the viewpoints of etching properties and rinsing properties. 45%, most preferably 10-40%.
(D)の含有量は、パーティクルの分散性及び再汚染防止性の観点から、電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは0〜25%、更に好ましくは0.1〜20%、特に好ましくは0.5〜15%、最も好ましくは1〜10%である。 The content of (D) is preferably 0 to 25%, more preferably 0.1 to 20 based on the weight of the active ingredient of the electronic material cleaning agent from the viewpoints of particle dispersibility and recontamination prevention. %, Particularly preferably 0.5 to 15%, most preferably 1 to 10%.
(E)の含有量は、基板のエッチング性コントロール及び分散安定性の観点から、電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは0〜10%、更に好ましくは0.01〜7%、特に好ましくは0.05〜5%、最も好ましくは0.1〜3%である。 The content of (E) is preferably 0 to 10%, more preferably 0.01 to 7 based on the weight of the active ingredient of the electronic material cleaning agent, from the viewpoints of substrate etching control and dispersion stability. %, Particularly preferably 0.05 to 5%, most preferably 0.1 to 3%.
(F)におけるそれぞれの添加剤の含有量は、還元剤、酸化防止剤、防錆剤、緩衝剤及びハイドロトロープ剤が、電子材料用洗浄剤の有効成分の重量に基づいて好ましくは0〜20%、更に好ましくは0.1〜15%、特に好ましくは0.5〜10%、最も好ましくは1〜5%である。また消泡剤の含有量は、好ましくは0〜2%、更に好ましくは0.01〜1.5%、特に好ましくは0.02〜1%、最も好ましくは0.05〜0.5%である。
(F)の合計の含有量は、電子材料用洗浄剤の有効成分の重量に基づいて、好ましくは0〜25%、更に好ましくは0.5〜20%、特に好ましくは1〜15%、最も好ましくは2〜10%である。
The content of each additive in (F) is preferably 0-20, based on the weight of the active ingredient of the electronic material cleaner, in which the reducing agent, antioxidant, rust inhibitor, buffering agent and hydrotrope agent are used. %, More preferably 0.1 to 15%, particularly preferably 0.5 to 10%, most preferably 1 to 5%. The content of the antifoaming agent is preferably 0 to 2%, more preferably 0.01 to 1.5%, particularly preferably 0.02 to 1%, most preferably 0.05 to 0.5%. is there.
The total content of (F) is preferably 0 to 25%, more preferably 0.5 to 20%, particularly preferably 1 to 15%, most preferably, based on the weight of the active ingredient of the electronic material cleaner. Preferably it is 2 to 10%.
尚、上記の任意成分(D)〜(F)の間で、組成が同一で重複する場合の含有量は、それぞれの任意成分の含有量を単純に合計したものではなく、それぞれ他の任意成分としての効果も同時に奏することを考慮して、使用目的に応じて調整する。 In addition, between the above arbitrary components (D) to (F), when the composition is the same and overlaps, the content of each arbitrary component is not simply the total, but each other arbitrary component In consideration of the fact that the effects are also produced at the same time, it is adjusted according to the purpose of use.
本発明の電子材料用洗浄剤の有効成分濃度は、運搬効率の観点からは、1〜100%であることが好ましく、更に好ましくは2〜90%、特に好ましくは5〜70%、最も好ましくは10〜50%である。
また、本発明の電子材料用洗浄剤を使用する際には、必要により、希釈水、特にイオン交換水(導電率0.2μS/cm以下)又は超純水(電気抵抗率18MΩ・cm以上)で希釈して、有効成分濃度を0.1〜15%、特に0.5〜10%にすることが、使用時の作業性及びコストの観点から好ましい。
上記水で希釈した場合で、有機溶剤(B)として炭素数6〜18のアルケンを使用するときは、洗浄剤中で前記アルケンが分散状態で存在することが、有機物汚れに対する除去性の観点から好ましい。
The active ingredient concentration of the electronic material cleaning agent of the present invention is preferably 1 to 100%, more preferably 2 to 90%, particularly preferably 5 to 70%, and most preferably from the viewpoint of transportation efficiency. 10 to 50%.
When using the electronic material cleaning agent of the present invention, if necessary, diluted water, particularly ion-exchanged water (conductivity: 0.2 μS / cm or less) or ultrapure water (electric resistivity: 18 MΩ · cm or more). It is preferable from the viewpoint of workability and cost during use that the active ingredient concentration is 0.1 to 15%, particularly 0.5 to 10%.
When diluted with water and using an alkene having 6 to 18 carbon atoms as the organic solvent (B), the presence of the alkene in a dispersed state in the cleaning agent is from the viewpoint of removability from organic contaminants. preferable.
本発明の電子材料用洗浄剤を水で希釈した場合の有効成分濃度0.1〜15%における25℃での洗浄剤のpHは、エッチング性及びリンス性の観点から、通常10〜14、好ましくは、11〜13である。
尚、本発明におけるpHは、pHメーター(株式会社堀場製作所製、M−12)を用いて測定温度25℃で測定される。
また、この場合の洗浄剤のガラスに対する接触角は、基板への濡れ広がり性の観点から10°以下が好ましく、更に好ましくは8°以下、特に好ましくは5°以下、最も好ましくは1°以下である。
本発明において接触角は、ガラスに対して接触角計により測定される[装置本体:PD−W(協和界面化学社製)、ガラス板:ガラス板#1737(コーニング社製)、検出条件:自動検出、測定条件:着滴から10秒後の接触角を測定]。
The pH of the cleaning agent at 25 ° C. in an active ingredient concentration of 0.1 to 15% when the electronic material cleaning agent of the present invention is diluted with water is usually 10 to 14, preferably from the viewpoint of etching property and rinsing property. Is 11-13.
The pH in the present invention is measured at a measurement temperature of 25 ° C. using a pH meter (manufactured by Horiba, Ltd., M-12).
In this case, the contact angle of the cleaning agent with respect to the glass is preferably 10 ° or less, more preferably 8 ° or less, particularly preferably 5 ° or less, and most preferably 1 ° or less from the viewpoint of wettability to the substrate. is there.
In the present invention, the contact angle is measured on a glass with a contact angle meter [device main body: PD-W (manufactured by Kyowa Interface Chemical Co., Ltd.), glass plate: glass plate # 1737 (manufactured by Corning), detection condition: automatic. Detection and measurement conditions: Measure contact angle 10 seconds after landing].
本発明の電子材料用洗浄剤は、例えばアニオン性界面活性剤(A)、アルケン(B)、アルカリ成分(C)並びに必要により任意成分(D)〜(F)及び水を10〜40℃で30〜300分混合溶解させることにより製造できる。
混合溶解用の装置は、特に限定されないが、例えば櫂型羽根を装備した攪拌混合装置や螺旋型羽根を装備した攪拌混合装置が使用できる。
The cleaning agent for electronic materials of the present invention contains, for example, an anionic surfactant (A), an alkene (B), an alkali component (C), and optionally components (D) to (F) and water at 10 to 40 ° C. It can be produced by mixing and dissolving for 30 to 300 minutes.
Although the apparatus for mixing and dissolving is not particularly limited, for example, a stirring and mixing apparatus equipped with a bowl-shaped blade or a stirring and mixing apparatus equipped with a spiral blade can be used.
電子材料用洗浄剤を水で希釈する方法は、特に限定されないが、例えば櫂型羽根を装備した攪拌混合装置や螺旋型羽根を装備した攪拌混合装置等を用いて、電子材料用洗浄剤と水とを10〜40℃で30〜300分間混合溶解する方法が挙げられる。 The method of diluting the electronic material cleaning agent with water is not particularly limited. For example, the electronic material cleaning agent and the water can be mixed with a stirring and mixing device equipped with a saddle type blade or a stirring and mixing device equipped with a spiral blade. Can be mixed and dissolved at 10 to 40 ° C. for 30 to 300 minutes.
本発明の電子材料の洗浄方法は、上記の洗浄剤を用いて、超音波洗浄、シャワー洗浄、スプレー洗浄、ブラシ洗浄、浸漬洗浄、浸漬揺動及び枚葉式洗浄からなる群から選ばれる少なくとも1種の洗浄方法によって洗浄する方法である。
洗浄温度は、洗浄性の観点から、10〜80℃が好ましく、更に好ましくは15〜60℃、特に好ましくは20〜50℃である。
The electronic material cleaning method of the present invention is at least one selected from the group consisting of ultrasonic cleaning, shower cleaning, spray cleaning, brush cleaning, immersion cleaning, immersion oscillation, and single wafer cleaning using the above-described cleaning agent. It is a method of cleaning by a seed cleaning method.
The washing temperature is preferably 10 to 80 ° C., more preferably 15 to 60 ° C., particularly preferably 20 to 50 ° C. from the viewpoint of detergency.
本発明の洗浄方法で洗浄した後のガラス表面の表面粗さ(Ra)は、好ましくは1.0nm以下、更に好ましくは0.75nm、特に好ましくは0.5nm以下である。Raが1.0nm以下であると、その後の工程においてスパッタ等により膜を形成する場合に均一な膜が形成できるため、歩留まり率が向上する。
尚、Raは、エスアイアイ・ナノテクノロジー社製、E−sweepを用いて下記の条件により測定される。
測定モード :DFM(タッピングモード)
スキャンエリア:10μm×10μm
走査線数 :256本(Y方向スキャン)
補正 :X,Y方向のフラット補正あり
The surface roughness (Ra) of the glass surface after being cleaned by the cleaning method of the present invention is preferably 1.0 nm or less, more preferably 0.75 nm, and particularly preferably 0.5 nm or less. When Ra is 1.0 nm or less, a uniform film can be formed when the film is formed by sputtering or the like in the subsequent process, and the yield rate is improved.
In addition, Ra is measured on condition of the following using the SII nanotechnology company make and E-sweep.
Measurement mode: DFM (tapping mode)
Scan area: 10 μm × 10 μm
Number of scan lines: 256 (Y-direction scan)
Correction: Flat correction in X and Y directions
本発明における電子材料用洗浄剤を用いて洗浄したガラスに対する水の接触角は、好ましくは20°以下であり、更に好ましくは15°以下である。 The contact angle of water with respect to the glass cleaned using the electronic material cleaning agent in the present invention is preferably 20 ° or less, and more preferably 15 ° or less.
以下、実施例により本発明を更に詳細に説明するが、本発明はこれに限定されるものではない。特に限定がない限り以下において部は重量部を示す。尚、以下において超純水は比抵抗値が18MΩ・cm以上のものを使用した。 EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to this. Unless otherwise specified, “parts” means “parts by weight” below. In the following, ultrapure water having a specific resistance value of 18 MΩ · cm or more was used.
[製造例1]
攪拌装置及び温度制御装置付きのガラス製反応装置に2−エチルヘキサノール256部を仕込み、攪拌下で0℃まで冷却し、系内温度を0℃に保ちながらクロロスルホン酸229部を3時間かけて滴下し、硫酸エステルを得た。更に48%水酸化カリウム水溶液252部及びイオン交換水583部を徐々に仕込み、20℃で60分間混合して中和して、有効成分濃度が40%のアニオン性界面活性剤(A−1)1248部を得た。
[Production Example 1]
A glass reactor equipped with a stirrer and a temperature controller was charged with 256 parts of 2-ethylhexanol, cooled to 0 ° C. with stirring, and 229 parts of chlorosulfonic acid was added over 3 hours while maintaining the system temperature at 0 ° C. Dropped to obtain a sulfate ester. Further, 252 parts of 48% potassium hydroxide aqueous solution and 583 parts of ion-exchanged water are gradually added, mixed and neutralized at 20 ° C. for 60 minutes, and an anionic surfactant (A-1) having an active ingredient concentration of 40%. 1248 parts were obtained.
[製造例2]
攪拌装置及び温度制御装置付きのガラス製反応装置にn−ブタノール148部を仕込み、攪拌下で70℃に温調し、系内温度を70℃に保ちながらリン酸98部を2時間かけて滴下後、更に70℃で4時間攪拌を継続してリン酸エステルを得た。更に、系内を30℃まで冷却し、30%水酸化ナトリウム水溶液133部及びイオン交換水201部を徐々に仕込み、20℃で60分間混合して中和し、有効成分濃度が40%のアニオン性界面活性剤(A−2)580部を得た。
[Production Example 2]
148 parts of n-butanol was charged into a glass reactor equipped with a stirrer and a temperature controller, and the temperature was adjusted to 70 ° C. with stirring, and 98 parts of phosphoric acid was added dropwise over 2 hours while maintaining the system temperature at 70 ° C. Thereafter, the mixture was further stirred at 70 ° C. for 4 hours to obtain a phosphate ester. Furthermore, the inside of the system is cooled to 30 ° C., 133 parts of 30% sodium hydroxide aqueous solution and 201 parts of ion-exchanged water are gradually added, mixed and neutralized at 20 ° C. for 60 minutes, and an active ingredient concentration of 40% 580 parts of a surfactant (A-2) was obtained.
[製造例3]
2−エチルヘキサノールを3,7−ジメチル−1−オクタノールに、クロロスルホン酸の部数を189部に、48%水酸化カリウム水溶液253部をDBU271部に、イオン交換水の部数を912部に代える以外は製造例1と同様にして、有効成分濃度が40%のアニオン性界面活性剤(A−3)1568部を得た。
[Production Example 3]
Except for replacing 2-ethylhexanol with 3,7-dimethyl-1-octanol, 189 parts of chlorosulfonic acid, 253 parts of 48% potassium hydroxide aqueous solution with 271 parts of DBU, and 912 parts of ion-exchanged water. Produced 1568 parts of an anionic surfactant (A-3) having an active ingredient concentration of 40% in the same manner as in Production Example 1.
[製造例4]
2−エチルヘキサン酸144部及びイオン交換水395部をビーカーに仕込み、20℃で15分攪拌して均一混合した後、N−メチルジエタノールアミン119部を徐々に仕込み、20℃で60分間混合して中和し、有効成分濃度が40%のアニオン性界面活性剤(A−4)658部を得た。
[Production Example 4]
First, 144 parts of 2-ethylhexanoic acid and 395 parts of ion-exchanged water are charged into a beaker and stirred at 20 ° C. for 15 minutes to uniformly mix, then 119 parts of N-methyldiethanolamine is gradually added and mixed at 20 ° C. for 60 minutes. Neutralization gave 658 parts of an anionic surfactant (A-4) having an active ingredient concentration of 40%.
[製造例5]
撹拌装置及び温度制御装置付きのステンレス製オートクレーブに1−オクタノール130部及び28%ナトリウムメチラートメタノール溶液8部を仕込み、攪拌下に室温(20℃)で系内の気相部を窒素で置換し、その後減圧下(ゲージ圧:−0.0025MPa)、120℃、2時間で脱メタノールを行った後、次いで減圧下(ゲージ圧:−0.05MPa)、反応温度120℃でエチレンオキサイド88部の吹き込みを開始し、ゲージ圧が0.1〜0.3MPaになるように制御しながら、系内の圧力変化が無くなるまで反応させて1−オクタノールのエチレンオキサイド2モル付加物218部を得た。攪拌及び温度制御装置付のガラス製反応装置に上記1−オクタノールのエチレンオキサイド2モル付加物164部、モノクロロ酢酸ナトリウム96部及びトルエン200部を仕込み、温度を50℃に保ちながら徐々に減圧度を高め−0.01MPaとした後、減圧脱水しながら顆粒状の水酸化ナトリウム38部を2時間かけて仕込み、更に熟成を6時間行った後、イオン交換水300部を加え、塩酸で酸性にして、静置、分液による脱塩を行った後、脱トルエンを行い、構造式がC8H17O(CH2CH2O)2CH2COOHで表されるエーテルカルボン酸を得た。攪拌及び温度制御装置付のガラス製反応装置に水323部を仕込み、顆粒状の水酸化ナトリウム30部を徐々に加えて溶解し、60℃で上記のエーテルカルボン酸208部を加え、有効成分濃度が40%のアニオン性界面活性剤(A−5)561部を得た。
[Production Example 5]
A stainless steel autoclave equipped with a stirrer and temperature controller was charged with 130 parts of 1-octanol and 8 parts of 28% sodium methylate methanol solution, and the gas phase part in the system was replaced with nitrogen at room temperature (20 ° C.) under stirring. Then, after methanol removal at 120 ° C. for 2 hours under reduced pressure (gauge pressure: −0.0025 MPa), 88 parts of ethylene oxide at a reaction temperature of 120 ° C. under reduced pressure (gauge pressure: −0.05 MPa). Blowing was started, and the reaction was continued until the pressure in the system disappeared while controlling the gauge pressure to be 0.1 to 0.3 MPa to obtain 218 parts of 1-octanol ethylene oxide 2-mol adduct. A glass reactor equipped with a stirring and temperature controller was charged with 164 parts of the 1-octanol ethylene oxide 2-mol adduct, 96 parts of sodium monochloroacetate and 200 parts of toluene, and gradually reduced the pressure while maintaining the temperature at 50 ° C. After increasing the pressure to -0.01 MPa, 38 parts of granular sodium hydroxide was charged over 2 hours while dehydrating under reduced pressure, and further aging was performed for 6 hours. Then, 300 parts of ion-exchanged water was added and acidified with hydrochloric acid. , Standing, and after desalting by liquid separation, toluene removal was performed to obtain an ether carboxylic acid having a structural formula represented by C 8 H 17 O (CH 2 CH 2 O) 2 CH 2 COOH. Charge 323 parts of water into a glass reactor equipped with stirring and temperature controller, gradually add 30 parts of granular sodium hydroxide and dissolve, add 208 parts of ether carboxylic acid at 60 ° C. Was 561 parts of 40% of anionic surfactant (A-5).
[製造例6]
撹拌装置及び温度制御装置付きのステンレス製オートクレーブに2−エチルヘキサノール113部及び水酸化カリウム3部を仕込み、攪拌下に室温(20℃)で系内の気相部を窒素で置換し、減圧下(ゲージ圧:−0.05MPa)に反応温度120℃でエチレンオキサイド384部の吹き込みを開始し、ゲージ圧が0.1〜0.3MPaになるように制御しながら、系内の圧力変化が無くなるまで反応させて2−エチルヘキサノールのエチレンオキサイド10モル付加物497部を得た。
2−エチルヘキサノール256部を上記2−エチルヘキサノールのエチレンオキサイド10モル付加物497部に、クロロスルホン酸の部数を102部に、48%水酸化カリウム水溶液の部数を112部に、イオン交換水の部数を833部に代える以外は製造例1と同様にして、有効成分濃度が40%のアニオン性界面活性剤(A−6)1512部を得た。
[Production Example 6]
A stainless steel autoclave equipped with a stirrer and a temperature controller was charged with 113 parts of 2-ethylhexanol and 3 parts of potassium hydroxide, and the gas phase part in the system was replaced with nitrogen at room temperature (20 ° C.) under stirring. (Gauge pressure: -0.05 MPa) At a reaction temperature of 120 ° C., 384 parts of ethylene oxide was started to be blown, and the pressure change in the system disappeared while controlling the gauge pressure to be 0.1 to 0.3 MPa. To give 497 parts of 2-ethylhexanol ethylene oxide 10 mol adduct.
256 parts of 2-ethylhexanol is added to 497 parts of the ethylene oxide 10 mol adduct of 2-ethylhexanol, 102 parts of chlorosulfonic acid, 112 parts of 48% potassium hydroxide aqueous solution, and ion-exchanged water. 1512 parts of anionic surfactant (A-6) having an active ingredient concentration of 40% was obtained in the same manner as in Production Example 1 except that the number of parts was changed to 833 parts.
[製造例7]
撹拌装置及び温度制御装置付きのステンレス製オートクレーブにシクロヘキシルアミン297部を仕込み、攪拌下に室温(20℃)で系内の気相部を窒素で置換し、減圧下(ゲージ圧:−0.05MPa)に反応温度100℃でエチレンオキサイド264部の吹き込みを開始し、ゲージ圧が0.1〜0.3MPaになるように制御しながら、系内の圧力変化が無くなるまで反応させてシクロヘキシルアミンエチレンオキサイド(2モル)付加物561部を得た。
[Production Example 7]
A stainless steel autoclave equipped with a stirrer and a temperature controller was charged with 297 parts of cyclohexylamine, and the gas phase in the system was replaced with nitrogen at room temperature (20 ° C.) under stirring, and under reduced pressure (gauge pressure: −0.05 MPa) ) At a reaction temperature of 100 ° C., 264 parts of ethylene oxide was started to be blown, and the reaction was continued until there was no pressure change in the system while controlling the gauge pressure to be 0.1 to 0.3 MPa. (2 mol) 561 parts of an adduct were obtained.
[実施例1〜25及び比較例1〜5]
表1及び表2に記載の各成分を、表1及び表2に記載の配合部数で、ビーカーを用いて20℃で均一混合して実施例1〜25及び比較例1〜5の洗浄剤を作製した。但し、表1及び表2に記載の(A)〜(F)の部数は有効成分の部数であり、超純水の部数は(A−1)〜(A−6)及び後述の(D)のPANa中の水を含む。
尚、表1及び表2中の成分の略号は下記の通りである。
・MeXSNa:メタキシレンスルホン酸ナトリウム塩(北星興業株式会社製)
・SDS:ラウリル硫酸ナトリウム塩(ナカライテスク株式会社製:比較用のアニオン界面活性剤)
・PELSNa:ポリオキシエチレンラウリルエーテル硫酸ナトリウム塩(サンデットEN、三洋化成工業株式会社製:比較用のアニオン界面活性剤)
・D2ehNa:スルホコハク酸ジ−2−エチルヘキシルナトリウム塩(東京化成工業株式会社製:比較用のアニオン界面活性剤)
・HC:ヘキシルカルビトール(SP値10.2)
・PP−15:プロピレンペンタマー(SP値7.6)
・TEG−M:トリエチレングリコールモノメチルエーテル(SP値10.8)
・FA:ホルムアミド(SP値19.2:比較用の溶剤)
・KOH:水酸化カリウム
・DBU:1,8−ジアザビシクロ[5.4.0]−7−ウンデセン[サンアプロ株式会社製]
・MDEA:N−メチルジエタノールアミン
・CHNEG:上記製造例7で得られたシクロヘキシルアミンエチレンオキサイド(2モル)付加物
・PANa:ポリアクリル酸ナトリウム塩[キャリボンL−400、43%水溶液、三洋化成工業株式会社製]
・EDTA:エチレンジアミンテトラ酢酸
・Cys:L−システイン
[Examples 1 to 25 and Comparative Examples 1 to 5]
The components in Tables 1 and 2 were mixed uniformly at 20 ° C. using the beaker in the number of parts shown in Tables 1 and 2, and the detergents of Examples 1 to 25 and Comparative Examples 1 to 5 were mixed. Produced. However, the number of parts (A) to (F) shown in Tables 1 and 2 is the number of parts of the active ingredient, and the number of parts of ultrapure water is (A-1) to (A-6) and (D) described later. Water in PANA.
In addition, the symbol of the component in Table 1 and Table 2 is as follows.
・ MeXSNa: Meta-xylenesulfonic acid sodium salt (manufactured by Hokusei Kogyo Co., Ltd.)
SDS: sodium lauryl sulfate (manufactured by Nacalai Tesque, Inc .: comparative anionic surfactant)
PELSNa: polyoxyethylene lauryl ether sulfate sodium salt (Sandet EN, manufactured by Sanyo Chemical Industries, Ltd .: comparative anionic surfactant)
D2ehNa: sulfosuccinic acid di-2-ethylhexyl sodium salt (manufactured by Tokyo Chemical Industry Co., Ltd .: comparative anionic surfactant)
HC: hexyl carbitol (SP value 10.2)
PP-15: propylene pentamer (SP value 7.6)
TEG-M: triethylene glycol monomethyl ether (SP value 10.8)
FA: formamide (SP value 19.2: solvent for comparison)
-KOH: Potassium hydroxide-DBU: 1,8-diazabicyclo [5.4.0] -7-undecene [manufactured by San Apro Co., Ltd.]
MDEA: N-methyldiethanolamine CHNEG: cyclohexylamine ethylene oxide (2 mol) adduct obtained in Preparation Example 7 PANa: polyacrylic acid sodium salt [Carribbon L-400, 43% aqueous solution, Sanyo Chemical Industries Ltd. Made by company]
EDTA: ethylenediaminetetraacetic acid Cys: L-cysteine
実施例1〜25及び比較例1〜5の洗浄剤を用いて、pH、洗浄性−1、洗浄性−2、洗浄性−3、洗浄性−4、洗浄性−5、エッチング性、洗浄後の水の接触角、洗浄剤の接触角、表面粗さ、起泡性及び経時安定性を測定又は評価した結果を表3及び表4に示す。 Using the cleaning agents of Examples 1 to 25 and Comparative Examples 1 to 5, pH, detergency-1, detergency-2, detergency-3, detergency-4, detergency-5, etching property, after cleaning Tables 3 and 4 show the results of measuring or evaluating the contact angle of water, the contact angle of the cleaning agent, the surface roughness, the foaming property and the stability over time.
尚、pH、洗浄性−1、洗浄性−2、洗浄性−3、洗浄性−4、洗浄性−5、エッチング性、洗浄後の水の接触角、洗浄剤の接触角、表面粗さ、起泡性及び経時安定性の測定又は評価は以下の方法で行った。 In addition, pH, detergency-1, detergency-2, detergency-3, detergency-4, detergency-5, etching property, contact angle of water after cleaning, contact angle of cleaning agent, surface roughness, The measurement or evaluation of foamability and stability over time was performed by the following method.
<pHの測定>
pHメーター(株式会社堀場製作所製、M−12)を用いて測定温度25℃で測定した。
<Measurement of pH>
The measurement was performed at a measurement temperature of 25 ° C. using a pH meter (manufactured by Horiba, Ltd., M-12).
<洗浄性−1>
市販のガラス基板(コーニング社製、ガラス板#1737、縦10cm×横10cm)にモデル汚染物質としてn−トリアコンタン(東京化成工業株式会社製)10mgを70℃のホットプレート(PMC Industries社製、デジタルホットプレートシリーズ730)上で1分間融着させることにより、汚染基板を作製した。洗浄剤1000gを2000mlのガラス製ビーカーに採り、作製した汚染基板を浸漬し、超音波洗浄機(200kHz)内で、30℃、5分間の洗浄を行った。洗浄後、基板を取り出し、超純水で十分にリンスを行った後、窒素ガスでブローして乾燥し、下記の評価点に従い、基板表面の洗浄性を微分干渉顕微鏡(Nikon社製、OPTIPHOT−2、倍率400倍)で評価した。尚、本評価は大気からの汚染を防ぐため、クラス1,000(FED−STD−209D、米国連邦規格、1988年)のクリーンルーム内で実施した。
◎:ほぼ完全に除去できている。
○:ほとんど洗浄できている。
△:若干粒子が残留している。
×:ほとんど洗浄できていない。
<Detergency-1>
10 mg of n-triacontane (manufactured by Tokyo Chemical Industry Co., Ltd.) as a model contaminant on a commercially available glass substrate (manufactured by Corning, glass plate # 1737, length 10 cm × width 10 cm) at 70 ° C. hot plate (PMC Industries, A contaminated substrate was prepared by fusing for 1 minute on a digital hot plate series 730). 1000 g of the cleaning agent was put in a 2000 ml glass beaker, the produced contaminated substrate was immersed, and cleaning was performed at 30 ° C. for 5 minutes in an ultrasonic cleaning machine (200 kHz). After cleaning, the substrate was taken out, thoroughly rinsed with ultrapure water, then blown with nitrogen gas and dried, and the substrate surface was cleaned according to the following evaluation points using a differential interference microscope (manufactured by Nikon, OPTIPHOT- 2 and 400 times magnification). This evaluation was performed in a clean room of class 1,000 (FED-STD-209D, US Federal Standard, 1988) to prevent contamination from the atmosphere.
A: Almost completely removed.
○: Almost cleaned.
Δ: Some particles remain.
X: Almost no washing
<洗浄性−2>
モデル汚染物質としてジオクチルフタレート(東京化成工業株式会社製)10mgを塗布した以外は、洗浄性−1と同様にして評価した。
<Detergency-2>
Evaluation was conducted in the same manner as in Detergency-1 except that 10 mg of dioctyl phthalate (manufactured by Tokyo Chemical Industry Co., Ltd.) was applied as a model contaminant.
<洗浄性評価−3>
市販のガラス基板(コーニング社製、ガラス板#1737、縦10cm×横10cm)上にガラス板を切断(破断)した際のガラス粉5mgを散布し、105℃のホットプレート(PMC Industries社製、デジタルホットプレートシリーズ730)上で1時間加熱して、汚染基板を作製した以外は、洗浄性−1と同様にして評価した。
<Detergency evaluation-3>
5 mg of glass powder obtained by cutting (breaking) the glass plate on a commercially available glass substrate (Corning, glass plate # 1737, length 10 cm × width 10 cm) was sprayed, and a 105 ° C. hot plate (PMC Industries, Evaluation was performed in the same manner as in Detergency-1 except that a contaminated substrate was prepared by heating on a digital hot plate series 730) for 1 hour.
<洗浄性−4>
研磨剤としての市販のコロイダルシリカスラリー(KEMIRA社製、VI−80)及び研磨布を用いて、市販のガラス基板(コーニング社製、ガラス板#1737、縦10cm×横10cm)を研磨した後、超純水で表面をリンスして窒素でブローすることにより、汚染基板を作製した以外は洗浄性−1と同様にして評価した。
<Detergency-4>
After polishing a commercially available glass substrate (Corning, glass plate # 1737, length 10 cm × width 10 cm) using a commercially available colloidal silica slurry (KEMIRA, VI-80) and a polishing cloth as an abrasive, The surface was rinsed with ultrapure water and blown with nitrogen to evaluate the same as in Detergency-1 except that a contaminated substrate was produced.
<洗浄性評価−5>
研磨剤としての市販の酸化セリウムスラリー(フジミインコーポレーティド社製、CEPOL−120)及び研磨布を用いて、市販のガラス基板(コーニング社製、ガラス板#1737、縦10cm×横10cm)を研磨した後、超純水で表面をリンスして窒素でブローすることにより、汚染基板を作製した以外は洗浄性−1と同様にして評価した。
<Detergency evaluation-5>
Using a commercially available cerium oxide slurry (manufactured by Fujimi Incorporated, CEPOL-120) as a polishing agent and a polishing cloth, a commercially available glass substrate (manufactured by Corning, glass plate # 1737, length 10 cm × width 10 cm) is polished. Then, the surface was rinsed with ultrapure water and blown with nitrogen to evaluate the same as in the cleaning property-1, except that a contaminated substrate was produced.
<エッチング性評価>
50mlのポリプロピレン製容器に洗浄剤10gを採り、50℃に温調した後、市販のガラス基板(コーニング社製、ガラス板#1737)を縦2cm×横2cmの大きさにカットした基板を入れ、50℃で24時間浸漬・静置後、洗浄剤を採取し、ICP発光分析装置(VARIAN社製、Varian730−ES)で洗浄剤中のSi含量を測定した。尚、予め試験前の洗浄剤についても同様にSi含量を測定しておき、その差を求めることで試験中に溶出したSi含量(ppb)を求めた。この溶出したSi含量が多いほど、エッチング性が高い。
<Etching evaluation>
After taking 10 g of cleaning agent into a 50 ml polypropylene container and adjusting the temperature to 50 ° C., put a substrate obtained by cutting a commercially available glass substrate (Corning, glass plate # 1737) into a size of 2 cm long × 2 cm wide, After immersion and standing at 50 ° C. for 24 hours, the cleaning agent was collected, and the Si content in the cleaning agent was measured with an ICP emission spectrometer (Varian730-ES, manufactured by VARIAN). In addition, the Si content (ppb) eluted during a test was calculated | required similarly about the cleaning agent before a test previously by measuring the Si content previously, and calculating | requiring the difference. The higher the eluted Si content, the higher the etching property.
<洗浄後の水の接触角>
上記洗浄性−1を評価した直後の基板を全自動接触角計[協和界面科学株式会社製、PD−W]を用いて、水に対する接触角(25℃、10秒後)を測定した。
<Contact angle of water after washing>
The substrate immediately after evaluating the detergency-1 was measured for a contact angle with water (at 25 ° C., after 10 seconds) using a fully automatic contact angle meter [PD-W, manufactured by Kyowa Interface Science Co., Ltd.].
<洗浄剤の接触角>
市販のガラス基板(コーニング社製、ガラス板#1737、縦10cm×横10cm)を超純水で十分にリンスした後、25℃で、窒素でブローして乾燥した直後の基板を全自動接触角計[協和界面科学株式会社製、PD−W]を用いて、洗浄剤に対する接触角(25℃、10秒後)を測定した。
<Contact angle of cleaning agent>
A commercially available glass substrate (Corning Corp., glass plate # 1737, length 10 cm × width 10 cm) was thoroughly rinsed with ultrapure water, and then the substrate immediately after being blown with nitrogen and dried at 25 ° C. was fully automatic contact angle The contact angle (25 ° C., 10 seconds later) with respect to the cleaning agent was measured using a total [PD-W manufactured by Kyowa Interface Science Co., Ltd.]
<表面粗さ>
20mlのガラス製容器に洗浄剤を10g採り、50℃に温調した後、市販のガラス基板(コーニング社製、ガラス板#1737)を縦2cm×横2cmの大きさにカットした基板を入れ、50℃で5時間浸漬・静置後、ピンセットを用いて基板を取り出し、超純水で十分にリンスして洗浄剤を除去した後、25℃で、窒素でブローして基板を乾燥した基板表面の表面粗さ(Ra)を原子間力顕微鏡(エスアイアイ・ナノテクノロジー株式会社製、E−Sweep)を用いて測定した。Raが小さいほど表面平坦性に優れる。
<Surface roughness>
After taking 10 g of the cleaning agent in a 20 ml glass container and adjusting the temperature to 50 ° C., put a substrate obtained by cutting a commercially available glass substrate (Corning, glass plate # 1737) into a size of 2 cm long × 2 cm wide, After dipping and leaving at 50 ° C. for 5 hours, the substrate is taken out using tweezers, rinsed thoroughly with ultrapure water to remove the cleaning agent, and then blown with nitrogen at 25 ° C. to dry the substrate. The surface roughness (Ra) was measured using an atomic force microscope (S-I Nano Technology Co., Ltd., E-Sweep). The smaller the Ra, the better the surface flatness.
<起泡性>
100mlのガラス製有栓メスシリンダー(JIS R3504「化学用体積計ガラス素材」の有栓メスシリンダーとして寸法が規定されたもの)に洗浄剤20mlを入れ、恒温水槽中で25℃に温調した後、有栓メスシリンダーの蓋を閉め、30秒間で60回上下に激しく振とうし、振とう直後と1分後の泡の量(ml)を測定した。振とう直後の泡の量が少ないほど起泡性が低く、1分後の泡の量が少ないほど消泡性が高い。
<Foamability>
20 ml of detergent is put into a 100 ml glass-equipped graduated cylinder (size specified as a graduated cylinder of JIS R3504 “Chemical Volumetric Glass Material”), and the temperature is adjusted to 25 ° C. in a constant temperature bath. The lid of the closed graduated cylinder was closed and shaken vigorously up and down 60 times in 30 seconds, and the amount of foam (ml) immediately after shaking and after 1 minute was measured. The smaller the amount of foam immediately after shaking, the lower the foaming property, and the smaller the amount of foam after 1 minute, the higher the defoaming property.
<経時安定性>
50mlのガラス容器に洗浄剤45mlを採り、5℃及び50℃の条件下で6ヶ月静置保存し、下記の評価点に従い、経時安定性を評価した。
◎:5℃、50℃いずれも外観変化なし。
○:5℃又は50℃のいずれかでわずかに分離するが、軽く振ると均一になる。
△:5℃又は50℃いずれかでかなり分離するが、軽く振ると均一になる。
×:5℃、50℃いずれも分離し、軽く振っても均一にならない。
<Stability over time>
Into a 50 ml glass container, 45 ml of the cleaning agent was taken and allowed to stand for 6 months under conditions of 5 ° C. and 50 ° C., and stability over time was evaluated according to the following evaluation points.
A: No change in appearance at 5 ° C. and 50 ° C.
○: Slightly separated at either 5 ° C or 50 ° C, but uniform when shaken lightly.
Δ: Separated considerably at either 5 ° C. or 50 ° C., but becomes uniform when shaken lightly.
X: Both 5 degreeC and 50 degreeC isolate | separate, Even if it shakes lightly, it does not become uniform.
表3及び表4に記載の結果から、本発明の電子材料用洗浄剤は基板表面の平坦性を損ねることなく、適度にコントロールされたエッチング性を有し、有機物汚れ、ガラスカレット及び研磨剤等のパーティクルの除去性及び再汚染防止性に優れることがわかる。 From the results described in Table 3 and Table 4, the electronic material cleaning agent of the present invention has a moderately controlled etching property without impairing the flatness of the substrate surface, organic matter stains, glass cullet, abrasives, etc. It can be seen that the particles are excellent in particle removability and recontamination prevention.
本発明の電子材料用洗浄剤は、油分、人体からの汚れ(指紋等)、樹脂、可塑剤(ジオクチルフタレート等)、有機パーティクル等の有機物並びに無機パーティクル(ガラス粉、砥粒、セラミック粉及び金属粉等)等を洗浄対象とする洗浄に好適に用いられる。
従って、本発明の電子材料用洗浄剤は、各種の電子材料[例えばフラットパネルディスプレイ用基板(液晶パネル用のガラス基板、カラーフィルター基板、アレイ基板、プラズマディスプレイ用基板及び有機EL用基板等)、フォトマスク用基板、ハードディスク用基板(アルミ基板、NiP基板、ガラス基板、磁気ディスク及び磁気ヘッド等)、半導体用基板(半導体素子及びシリコンウェハ等)、光学レンズ、プリント配線基板、光通信用ケーブル、LED、太陽電池用基板及び水晶振動子]の製造工程における洗浄工程において好適に使用することができる。
また、本発明の電子材料の洗浄方法は、特に電子材料が、フラットパネルディスプレイ用基板、フォトマスク用基板、ハードディスク用基板又は半導体用基板である場合に好適である。
The cleaning agent for electronic materials of the present invention includes oil, dirt from human bodies (fingerprints, etc.), resin, plasticizer (dioctyl phthalate, etc.), organic substances such as organic particles, and inorganic particles (glass powder, abrasive grains, ceramic powder and metal). It is suitably used for cleaning in which powder or the like is to be cleaned.
Therefore, the cleaning agent for electronic materials of the present invention can be used for various electronic materials [for example, flat panel display substrates (glass substrates for liquid crystal panels, color filter substrates, array substrates, plasma display substrates, organic EL substrates, etc.), Photomask substrate, hard disk substrate (aluminum substrate, NiP substrate, glass substrate, magnetic disk, magnetic head, etc.), semiconductor substrate (semiconductor element, silicon wafer, etc.), optical lens, printed wiring board, optical communication cable, LED, solar cell substrate and quartz crystal resonator] can be suitably used in a cleaning process in the manufacturing process.
The electronic material cleaning method of the present invention is particularly suitable when the electronic material is a flat panel display substrate, a photomask substrate, a hard disk substrate, or a semiconductor substrate.
Claims (12)
R1[−(OA1)a−Q- ]b (1)
[式中、R1は炭素数4〜10の炭化水素基、A1は炭素数2〜4のアルキレン基、Q-は−COO-、−OCH2COO-、−SO3 -、−OSO3 -又は−OPO2(OR2)-、R2は水素又は炭素数1〜10の炭化水素基、aは平均値であって0〜20、bは1〜6の整数、Q-が−COO-又は−SO3 -の場合aは0である。] The anionic component contains an anionic surfactant (A) represented by the general formula (1), an alkene (B) having 6 to 18 carbon atoms, and an alkaline component (C). A cleaning agent for electronic materials having an SP value of 6 to 13 and a pH at 25 ° C of 10 to 14 at an active ingredient concentration of 0.1 to 15%.
R 1 [- (OA 1) a -Q -] b (1)
[Wherein, R 1 is a hydrocarbon group having 4 to 10 carbon atoms, A 1 is an alkylene group having 2 to 4 carbon atoms, Q − is —COO − , —OCH 2 COO − , —SO 3 − , —OSO 3 - or -OPO 2 (oR 2) -, R 2 is hydrogen or a hydrocarbon group having 1 to 10 carbon atoms, a is 0 to 20 and an average value, b is an integer of 1 to 6, Q - is -COO - or -SO 3 - in the case a of zero. ]
RR 3Three [−(OA[-(OA 22 )) cc −OH]-OH] dd (2) (2)
[式中、R[Wherein R 3Three は炭素数6〜8の炭化水素基、AIs a hydrocarbon group having 6 to 8 carbon atoms, A 22 は炭素数2〜4のアルキレン基、cは平均値であって0〜20、dは1〜6の整数である。]Is an alkylene group having 2 to 4 carbon atoms, c is an average value of 0 to 20, and d is an integer of 1 to 6. ]
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JP5500911B2 (en) * | 2009-08-26 | 2014-05-21 | ライオン株式会社 | Hard disk substrate cleaning composition and hard disk substrate cleaning method |
KR20110028239A (en) * | 2009-09-11 | 2011-03-17 | 동우 화인켐 주식회사 | Rinsing composition of substrate for manufacturing flat panel display device |
WO2011031092A2 (en) * | 2009-09-11 | 2011-03-17 | 동우 화인켐 주식회사 | Cleaning solution composition for substrate for preparation of flat panel display |
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JP5401359B2 (en) * | 2010-02-16 | 2014-01-29 | 花王株式会社 | Alkali detergent composition for hard surface |
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JP2016037606A (en) * | 2014-08-08 | 2016-03-22 | 三洋化成工業株式会社 | Detergent composition for electronic material, and production method for electronic material |
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JPWO2018174092A1 (en) * | 2017-03-22 | 2020-01-30 | 三菱ケミカル株式会社 | Cleaning solution for substrate for semiconductor device, method for cleaning substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and substrate for semiconductor device |
KR101955597B1 (en) * | 2017-05-17 | 2019-05-31 | 세메스 주식회사 | Apparatus and method for manufacturing cleaning solution |
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KR100617855B1 (en) * | 2004-04-30 | 2006-08-28 | 산요가세이고교 가부시키가이샤 | Alkali cleaner |
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