本發明係基於如下見解：藉由將一併含有平均短徑大於球狀二氧化矽粒子之非球狀二氧化矽粒子與球狀二氧化矽粒子作為研磨粒之研磨液組合物用於粗研磨，可不大幅降低研磨速度而減少長波長波紋。通常，於磁碟基板之製造中，若可減少長波長波紋，則生產性亦提高。 藉由將平均短徑大於球狀二氧化矽粒子之非球狀二氧化矽粒子與球狀二氧化矽粒子一併用作研磨粒而可不大幅降低研磨速度而減少長波長波紋之機制的詳細情況尚不明確，但推測如下。認為藉由於研磨時使用平均短徑大於球狀二氧化矽粒子之非球狀二氧化矽粒子，球狀二氧化矽粒子會進入至非球狀二氧化矽粒子間之空隙，而研磨中之研磨墊與基板之被研磨面之間之研磨粒之填充率會變高。因此，認為由於因研磨粒接觸於被研磨面之面積擴大而基板之切削面積增加；及研磨時施加於基板之研磨負荷於廣範圍內均一化等，故而可維持或提高研磨速度。進而認為可減小研磨時研磨墊與基板之間所產生之振動之大小，而可減少長波長波紋。認為上述效果係於球狀二氧化矽粒子之平均短徑為特定值以上之情形時變得尤其顯著。但是，本發明亦可不限定於該等機制地進行解釋。 即，本發明之研磨液組合物係關於如下磁碟基板用研磨液組合物，其包含非球狀二氧化矽粒子A、球狀二氧化矽粒子B及水，且其pH值為0.5以上且6.0以下，上述非球狀二氧化矽粒子A之平均短徑為105 nm以上且大於上述球狀二氧化矽粒子B之平均短徑；或者係關於如下磁碟基板用研磨液組合物，其係至少調配非球狀二氧化矽粒子A、球狀二氧化矽粒子B及水而成，且其pH值為0.5以上且6.0以下，上述非球狀二氧化矽粒子A之平均短徑為105 nm以上且大於上述球狀二氧化矽粒子B之平均短徑。 於本發明中，所謂基板之「波紋」，係指較粗糙度波長較長之基板表面之凹凸。於本發明中，所謂「長波長波紋」，係指根據500～5000 μm之波長而觀察到之波紋。藉由減少研磨後之基板表面之長波長波紋，而可於磁碟驅動器中降低磁頭之飛行高度，而可提高磁碟之記錄密度。基板表面之長波長波紋可藉由實施例中所記載之方法進行測定。 [非球狀二氧化矽粒子A] 如上所述，本發明之研磨液組合物含有非球狀二氧化矽粒子A(以下，亦稱為「粒子A」)。 粒子A之平均球形度較佳為0.60以上，更佳為0.70以上，並且，較佳為0.85以下，更佳為0.80以下，進而較佳為0.75以下。於本發明中，粒子A之平均球形度為至少200個粒子A之球形度之平均值。粒子A之球形度例如可使用利用TEM之觀察及圖像分析軟體等求出粒子A之投影面積S與投影周長L，並根據以下之式算出。 球形度＝4π×S/L2
各粒子A之球形度係與上述平均球形度同樣地，較佳為0.60以上，更佳為0.70以上，並且，較佳為0.85以下，更佳為0.80以下，進而較佳為0.75以下。 粒子A之平均短徑大於球狀二氧化矽粒子B之平均短徑。關於粒子A之平均短徑，就提高研磨速度及減少長波長波紋之觀點而言，為105 nm以上，較佳為160 nm以上，更佳為180 nm以上，進而較佳為185 nm以上，並且，較佳為500 nm以下，更佳為450 nm以下，進而較佳為400 nm以下。 於本發明中，粒子A之平均短徑為至少200個粒子A之短徑之平均值。粒子A之短徑為例如使用利用TEM之觀察及圖像分析軟體等而描繪出與所投影之粒子A之圖像外切之最小長方形時的上述長方形之短邊之長度。同樣地，粒子A之長徑為上述長方形之長邊之長度。 關於粒子A之平均縱橫比，就提高研磨速度及減少長波長波紋之觀點而言，較佳為1.10以上，更佳為1.15以上，進而較佳為1.20以上，並且，就同樣之觀點而言，較佳為2.00以下，更佳為1.70以下，進而較佳為1.50以下。 於本發明中，粒子A之平均縱橫比為至少200個粒子A之縱橫比之平均值。粒子A之縱橫比為粒子A之長徑與短徑之比(長徑/短徑)。 關於粒子A之BET比表面積，就提高研磨速度及減少長波長波紋之觀點而言，較佳為50 m2
/g以下，更佳為45 m2
/g以下，進而較佳為40 m2
/g以下，並且，較佳為10 m2
/g以上，更佳為15 m2
/g以上，進而較佳為20 m2
/g以上。於本發明中，BET比表面積可藉由氮吸附法(以下亦稱為「BET法」)而算出。具體而言，可藉由實施例中所記載之測定方法而算出。 關於粒子A之平均一次粒徑D1A
，就提高研磨速度及減少長波長波紋之觀點而言，較佳為60 nm以上，更佳為70 nm以上，進而較佳為80 nm以上，並且，就減少長波長波紋之觀點而言，較佳為200 nm以下，更佳為150 nm以下，進而較佳為120 nm以下。 於本發明中，粒子A之平均一次粒徑可使用BET比表面積S(m2
/g)，根據下述式而算出。具體而言，可藉由實施例中所記載之測定方法而算出。 平均一次粒徑(nm)＝2727/S 關於粒子A之平均二次粒徑D2A
，就提高研磨速度及減少長波長波紋之觀點而言，較佳為160 nm以上，更佳為180 nm以上，進而較佳為200 nm以上，並且，就同樣之觀點而言，較佳為500 nm以下，更佳為400 nm以下，進而較佳為350 nm以下。 於本發明中，所謂粒子A之平均二次粒徑係指基於藉由動態光散射法測定之散射強度分佈之平均粒徑。於本發明中，所謂「散射強度分佈」係指藉由動態光散射法(DLS：Dynamic Light Scattering)或準彈性光散射(QLS：Quasielastic Light Scattering)求出之次微米以下之粒子之重量換算的粒徑分佈。具體而言，本發明中之粒子A之平均二次粒徑可藉由實施例中所記載之方法而獲得。 關於粒子A之平均二次粒徑D2A
與平均一次粒徑D1A
之粒徑比(D2A
/D1A
)，就提高研磨速度及減少長波長波紋之觀點而言，較佳為2.00以上，更佳為2.50以上，進而較佳為2.50以上，並且，就提高研磨速度之觀點而言，較佳為4.00以下，更佳為3.00以下，進而較佳為2.80以下。 於本發明中，粒徑比(D2A
/D1A
)可意指粒子A之異形程度。通常藉由動態光散射法測定之平均二次粒徑D2A
於二氧化矽粒子為異形粒子之情形時係檢測長方向上之光散射而進行處理，因此考慮長方向與短方向之長度，異形程度越大，數值會變得越大。由藉由BET法測定之比表面積值換算之平均一次粒徑D1A
係以所求出之粒子之體積為基礎並由球換算表示，因此若與平均二次粒徑D2A
相比則成為較小之數值。就提高研磨速度及減少長波長波紋之觀點而言，粒徑比(D2A
/D1A
)較佳為於上述範圍中亦較大。 關於粒子A之二次粒徑之變異係數(以下亦稱為「CV值」)，就提高研磨速度及減少長波長波紋之觀點而言，較佳為10%以上，更佳為15%以上，進而較佳為20%以上，並且，較佳為35%以下，較佳為30%以下，更佳為28%以下。 於本發明中，所謂粒子A之二次粒徑之CV值，係指藉由動態光散射法，基於檢測角90°之散射強度分佈，用所測定之二次粒徑之標準偏差除以平均二次粒徑並乘以100所獲得之值(單位：%)。具體而言，上述CV值可藉由實施例所記載之方法進行測定。 作為粒子A，例如可列舉：膠體二氧化矽、薰製二氧化矽、經表面修飾之二氧化矽、沈澱法二氧化矽等。就提高研磨速度及減少長波長波紋之觀點而言，作為粒子A，較佳為選自膠體二氧化矽及沈澱法二氧化矽中之一種以上，更佳為膠體二氧化矽，進而較佳為下述具有特定形狀之膠體二氧化矽。 關於粒子A之形狀，就提高研磨速度及減少長波長波紋之觀點而言，較佳為將粒徑小於粒子A之二次粒徑之二氧化矽粒子作為前驅物粒子，複數個前驅物粒子凝聚或融合而成之形狀。就同樣之觀點而言，粒子A較佳為選自金平糖型之二氧化矽粒子Aa、異形型之二氧化矽粒子Ab、異形且金平糖型之二氧化矽粒子Ac、及沈澱法二氧化矽粒子Ad中之至少一種二氧化矽粒子，更佳為選自異形型之二氧化矽粒子Ab及沈澱法二氧化矽粒子Ad中之一種以上，進而較佳為異形型之二氧化矽粒子Ab。粒子A可為一種非球狀二氧化矽粒子，亦可為兩種以上之非球狀二氧化矽粒子之組合。 於本發明中，金平糖型之二氧化矽粒子Aa(以下，亦稱為「粒子Aa」)係指於球狀之粒子表面具有特異之疣狀突起之二氧化矽粒子(參照圖1)。粒子Aa較佳為最大之前驅物粒子a1與粒徑為前驅物粒子a1之1/5以下之1個以上之前驅物粒子a2凝聚或融合而成之形狀。粒子Aa較佳為粒徑較小之複數個前驅物粒子a2之一部分埋入至粒徑較大之1個前驅物粒子a1中之狀態。粒子Aa例如可藉由日本專利特開2008-137822號公報中所記載之方法而獲得。前驅物粒子之粒徑可以圓當量徑、即與前驅物粒子之投影面積相同之面積之圓的直徑之形式求出，該圓當量徑係於利用TEM等之觀察圖像中於1個前驅物粒子內進行測定。二氧化矽粒子Ab及二氧化矽粒子Ac之前驅物粒子之粒徑亦可以相同方式求出。 於本發明中，異形型之二氧化矽粒子Ab(以下，亦稱為「粒子Ab」)係指2個以上之前驅物粒子、較佳為2個以上且10個以下之前驅物粒子凝聚或融合而成之形狀之二氧化矽粒子(參照圖2)。粒子Ab較佳為以最小之前驅物粒子之粒徑為基準，粒徑為1.5倍以內之2個以上之前驅物粒子凝聚或融合而成之形狀。粒子Ab例如可藉由日本專利特開2015-86102號公報所記載之方法而獲得。 於本發明中，異形且金平糖型之二氧化矽粒子Ac(以下，亦稱為「粒子Ac」)係將上述粒子Ab設為前驅物粒子c1，最大之前驅物粒子c1與粒徑為前驅物粒子c1之1/5以下之1個以上之前驅物粒子c2凝聚或融合而成之形狀。 於本發明中，沈澱法二氧化矽粒子Ad(以下，亦稱為「粒子Ad」)係指藉由沈澱法製造之二氧化矽粒子(參照圖3)。關於粒子Ad之形狀，就提高研磨速度及減少刮痕之觀點而言，較佳為複數個一次粒子凝聚而成之形狀。作為粒子Ad之製造方法，例如可列舉Tosoh研究、技術報告 第45卷(2001)第65～69頁所記載之方法等公知之方法。作為粒子Ad之製造方法之具體例，可列舉：藉由矽酸鈉等矽酸鹽與硫酸等礦酸之中和反應使二氧化矽粒子析出之沈澱法。較佳為於相對高溫下且於鹼性之條件下進行上述中和反應，藉此，二氧化矽之一次粒子之成長較快地進行，而一次粒子凝聚成絮凝體狀並沈澱，較佳為將其進一步粉碎，藉此可獲得粒子Ad。 粒子A較佳為包含選自粒子Aa、Ab、Ac及Ad中之一種以上。關於粒子A中之粒子Aa、Ab、Ac及Ad之合計量，就提高研磨速度及減少長波長波紋之觀點而言，較佳為50質量%以上，更佳為70質量%以上，進而較佳為80質量%以上，進而更佳為90質量%以上，進而更佳為實質上為100質量%。 就抑制粗研磨中之研磨速度之降低及減少長波長波紋、以及減少粗研磨及精研磨後之突起缺陷之觀點而言，粒子A亦可為藉由火焰熔融法、溶膠凝膠法、及粉碎法所製造者，但較佳為藉由將矽酸鹼性水溶液作為起原始料之粒子成長法(以下，亦稱為「水玻璃法」)而製造之二氧化矽粒子。作為粒子A之使用形態，較佳為漿料狀。 調整粒子A之粒徑分佈之方法例如可列舉：藉由在其製造階段中之粒子之成長過程中添加供成為新核之粒子而具有所需之粒徑分佈的方法、或混合具有不同之粒徑分佈之兩種以上之二氧化矽粒子而具有所需之粒徑分佈之方法。 關於研磨液組合物中之粒子A之含量，就提高研磨速度及減少長波長波紋之觀點而言，較佳為0.1質量%以上，更佳為0.5質量%以上，進而較佳為1質量%以上，進而更佳為2質量%以上，並且，就經濟性之觀點而言，較佳為30質量%以下，更佳為25質量%以下，進而較佳為20質量%以下，進而更佳為15質量%以下。 [球狀二氧化矽粒子B] 如上所述，本發明之研磨液組合物含有球狀二氧化矽粒子B(以下，亦稱為「粒子B」)。 於本發明中，關於粒子B之平均球形度，就抑制粗研磨中之研磨速度之降低及減少長波長波紋、以及減少粗研磨及精研磨後之突起缺陷之觀點而言，較佳為0.86以上，更佳為0.88以上，並且，就同樣之觀點而言，為1.00以下，較佳為0.95以下。粒子B之平均球形度可藉由與粒子A同樣之方法算出。各粒子B之球形度係與上述平均粒徑度同樣地，較佳為0.86以上，更佳為0.88以上，並且，為1.00以下，較佳為0.95以下。 關於粒子B之平均球形度，就表現出本發明之效果之觀點而言，較佳為大於粒子A之平均球形度。關於粒子A與粒子B之平均球形度之差，就表現出本發明之效果之觀點而言，較佳為0.02以上，更佳為0.05以上，進而較佳為0.08以上，並且，就同樣之觀點而言，較佳為0.50以下，更佳為0.30以下，進而較佳為0.25以下。 關於粒子B之平均短徑，就提高研磨速度及減少長波長波紋之觀點而言，係小於粒子A之平均短徑。關於粒子B之平均短徑，就同樣之觀點而言，較佳為15 nm以上，更佳為45 nm以上，進而較佳為85 nm以上，並且，較佳為200 nm以下，更佳為150 nm以下，進而較佳為130 nm以下。粒子B之平均短徑可藉由與粒子A同樣之方法算出。 關於本發明之粒子A之平均短徑與粒子B之平均短徑之比(粒子A之平均短徑)/(粒子B之平均短徑)，就提高研磨速度及減少長波長波紋之觀點而言，係超過1.0，較佳為1.5以上，更佳為2.0以上，進而較佳為2.5以上，進而較佳為3.0以上，並且，就同樣之觀點而言，較佳為30.0以下，更佳為15.0以下，進而較佳為10.0以下，進而較佳為7.0以下，進而較佳為4.0以下。 粒子B之平均縱橫比為1.00以上，並且，就提高研磨速度及減少長波長波紋之觀點而言，較佳為1.15以下，更佳為1.10以下，進而較佳為1.08以下。粒子B之平均縱橫比及縱橫比可藉由與粒子A同樣之方法算出。 關於粒子B之平均一次粒徑D1B
，就提高研磨速度及減少長波長波紋之觀點而言，較佳為15 nm以上，更佳為30 nm以上，進而較佳為40 nm以上，並且，就同樣之觀點而言，較佳為150 nm以下，更佳為120 nm以下，進而較佳為100 nm以下。粒子B之平均一次粒徑可藉由與粒子A同樣之方法算出。 關於粒子B之平均二次粒徑D2B
，就提高研磨速度及減少長波長波紋之觀點而言，較佳為20 nm以上，更佳為45 nm以上，進而較佳為85 nm以上，並且，就同樣之觀點而言，較佳為200 nm以下，更佳為180 nm以下，進而較佳為160 nm以下。粒子B之平均二次粒徑可藉由與粒子A同樣之方法算出。 關於粒子B之平均二次粒徑D2B
與平均一次粒徑D1B
之粒徑比(D2B
/D1B
)，就提高研磨速度及減少長波長波紋之觀點而言，較佳為1.05以上，更佳為1.50以上，進而較佳為2.00以上，並且，就同樣之觀點而言，較佳為4.00以下，更佳為3.50以下，進而較佳為3.00以下。 關於粒子B之二次粒徑之CV值，就提高研磨速度及減少長波長波紋之觀點而言，較佳為15%以上，更佳為18%以上，進而較佳為20%以上，並且，就同樣之觀點而言，較佳為45%以下，更佳為40%以下，進而較佳為35%以下。粒子B之二次粒徑之CV值可藉由與粒子A同樣之方法算出。 作為粒子B，例如可列舉：膠體二氧化矽、薰製二氧化矽、經表面修飾之二氧化矽等。作為粒子B，例如，通常市售之膠體二氧化矽可符合條件。就抑制研磨速度之降低及減少長波長波紋、以及減少突起缺陷之觀點而言，作為粒子B，較佳為膠體二氧化矽。粒子B可為一種球狀二氧化矽粒子，亦可為兩種以上之球狀二氧化矽粒子之組合。 就提高研磨速度、減少長波長波紋及減少突起缺陷之觀點而言，粒子B亦可為藉由火焰熔融法、溶膠凝膠法、及粉碎法所製造者，但較佳為藉由水玻璃法而製造之二氧化矽粒子。作為粒子B之使用形態，較佳為漿料狀。 關於本發明之研磨液組合物中之粒子B之含量，就提高研磨速度及減少長波長波紋之觀點而言，較佳為0.1質量%以上，更佳為0.5質量%以上，進而較佳為1.0質量%以上，並且，就經濟性之觀點而言，較佳為20.0質量%以下，更佳為15.0質量%以下，進而較佳為10.0質量%以下。 關於本發明之研磨液組合物中之粒子A之含量與粒子B之含量之質量比A/B，就提高研磨速度及減少長波長波紋之觀點而言，較佳為5/95以上，更佳為20/80以上，進而較佳為40/60以上，進而較佳為50/50以上，進而較佳為51/49以上，進而較佳為60/40以上，並且，就同樣之觀點而言，較佳為95/5以下，更佳為90/10以下，進而較佳為80/20以下，進而較佳為75/25以下。於粒子B為兩種以上之球狀二氧化矽粒子之組合之情形時，粒子B之含量係指該等之合計之含量。粒子A之含量亦同樣。 於本發明之研磨液組合物含有粒子A及粒子B以外之二氧化矽粒子之情形時，關於研磨液組合物中之相對於全部二氧化矽粒子之粒子A與粒子B之合計含量，就提高研磨速度及減少長波長波紋之觀點而言，較佳為98.0質量%以上，更佳為98.5質量%以上，進而較佳為99.0質量%以上，進而更佳為99.5質量%以上，進而更佳為99.8質量%以上，進而更佳為實質上為100質量%。 [pH值調整劑] 關於本發明之研磨液組合物之pH值，就提高研磨速度及減少長波長波紋之觀點而言，為0.5以上且6.0以下。就提高研磨速度、減少長波長波紋、及調整pH值之觀點而言，本發明之研磨液組合物較佳為含有pH值調整劑。作為pH值調整劑，就同樣之觀點而言，較佳為選自酸及鹽中之一種以上。 作為酸，例如可列舉：硝酸、硫酸、亞硫酸、過硫酸、鹽酸、過氯酸、磷酸、膦酸、次膦酸、焦磷酸、多磷酸、胺基硫酸等無機酸；有機磷酸、有機膦酸等有機酸等。其中，就提高研磨速度及減少長波長波紋之觀點而言，較佳為選自磷酸、硫酸及1-羥基亞乙基-1,1-二膦酸中之至少一種，更佳為選自硫酸及磷酸中之至少一種，進而較佳為硫酸。 作為鹽，例如可列舉上述之酸與選自金屬、氨及烷基胺中之至少一種之鹽。作為上述金屬之具體例，可列舉屬於週期表之1～11族之金屬。該等之中，就提高研磨速度及減少長波長波紋之觀點而言，較佳為上述酸與屬於1族之金屬或氨之鹽。 關於研磨液組合物中之pH值調整劑之含量，就不會大幅損及研磨速度而可減少長波長波紋之觀點而言，較佳為0.001質量%以上，更佳為0.01質量%以上，進而較佳為0.05質量%以上，進而更佳為0.1質量%以上，並且，就同樣之觀點而言，較佳為5.0質量%以下，更佳為4.0質量%以下，進而較佳為3.0質量%以下，進而更佳為2.5質量%以下。 [氧化劑] 就提高研磨速度及減少長波長波紋之觀點而言，本發明之研磨液組合物亦可含有氧化劑。作為氧化劑，就同樣之觀點而言，例如可列舉：過氧化物、過錳酸或其鹽、鉻酸或其鹽、過氧酸或其鹽、氧酸或其鹽、硝酸類、硫酸類等。該等之中，較佳為選自過氧化氫、硝酸鐵(III)、過乙酸、過氧二硫酸銨、硫酸鐵(III)及硫酸銨鐵(III)中之至少一種，就提高研磨速度之觀點、金屬離子不會附著於被研磨基板之表面之觀點及獲取容易性之觀點而言，更佳為過氧化氫。該等氧化劑可單獨使用或混合兩種以上而使用。 關於研磨液組合物中之上述氧化劑之含量，就提高研磨速度之觀點而言，較佳為0.01質量%以上，更佳為0.05質量%以上，進而較佳為0.1質量%以上，並且，就提高研磨速度及減少長波長波紋之觀點而言，較佳為4.0質量%以下，更佳為2.0質量%以下，進而較佳為1.5質量%以下。 [水] 本發明之研磨液組合物係含有水作為介質。作為水，可列舉：蒸餾水、離子交換水、純水及超純水等。關於研磨液組合物中之水之含量，就研磨液組合物之處理變得容易之觀點而言，較佳為61質量%以上，更佳為70質量%以上，進而較佳為80質量%以上，進而更佳為85質量%以上，並且，就同樣之觀點而言，較佳為99質量%以下，更佳為98質量%以下，進而較佳為97質量%以下。 [其他成分] 本發明之研磨液組合物亦可視需要而含有其他成分。作為其他成分，可列舉：增黏劑、分散劑、防銹劑、鹼性物質、研磨速度提昇劑、界面活性劑、高分子化合物等。上述其他成分較佳為於不損及本發明之效果之範圍內含於研磨液組合物中，研磨液組合物中之上述其他成分之含量較佳為0質量%以上，更佳為超過0質量%，進而較佳為0.1質量%以上，並且，較佳為10質量%以下，更佳為5質量%以下。 [氧化鋁研磨粒] 關於本發明之研磨液組合物，就減少突起缺陷之觀點而言，氧化鋁研磨粒之含量較佳為0.1質量%以下，更佳為0.05質量%以下，進而較佳為0.02質量%以下，進而較佳為實質上不含氧化鋁研磨粒。於本發明中，所謂「實質上不含氧化鋁研磨粒」，可包括如下情況：不含氧化鋁粒子；不含作為研磨粒發揮功能之量之氧化鋁粒子；或不含會對研磨結果造成影響之量之氧化鋁粒子。關於氧化鋁粒子於研磨液組合物中之含量，相對於研磨液組合物中之研磨粒總量，較佳為2質量%以下，更佳為1質量%以下，進而較佳為0.5質量%以下，進而更佳為實質上為0質量%。 [pH值] 關於本發明之研磨液組合物之pH值，就提高研磨速度、及減少長波長波紋之觀點而言，為0.5以上，較佳為0.7以上，更佳為0.9以上，進而較佳為1.0以上，進而更佳為1.2以上，進而更佳為1.4以上，並且，就同樣之觀點而言，為6.0以下，較佳為4.0以下，更佳為3.0以下，進而較佳為2.5以下，進而更佳為2.0以下。pH值較佳為使用上述pH值調整劑而進行調整。上述pH值係於25℃下之研磨液組合物之pH值，可使用pH計進行測定，較佳為將pH計之電極浸漬於研磨液組合物中2分鐘後之數值。 [研磨液組合物之製造方法] 本發明之研磨液組合物係至少調配粒子A、粒子B及水而成，且其pH值為0.5以上且6.0以下。本發明之研磨液組合物例如可藉由利用公知之方法將包含粒子A及粒子B之二氧化矽漿料、與進而視需要之pH值調整劑、氧化劑及其他成分進行調配，並將pH值設為0.5以上且6.0以下而製造。因此，本發明係關於一種用於製造研磨液組合物之二氧化矽漿料之製造方法，其包括至少調配粒子A、粒子B及水之步驟。進而，本發明係關於一種研磨液組合物之製造方法，其包括至少調配粒子A、粒子B及水之步驟，且視需要包括將pH值調整為0.5以上且6.0以下之步驟。於本發明中，所謂「調配」，包括將粒子A、粒子B及水、以及視需要之pH值調整劑、氧化劑及其他成分同時或以任意順序進行混合之情況。上述調配例如可使用均質攪拌機、均質機、超音波分散機及濕式球磨機等混合器進行。研磨液組合物之製造方法中之各成分之較佳調配量係與研磨液組合物中之各成分之較佳含量相同。 就二氧化矽粒子之分散性之觀點而言，本發明之研磨液組合物之製造方法較佳為包括以下之步驟。 步驟1：將水、pH值調整劑、及任意之氧化劑進行混合而製備pH值6.0以下之分散介質之步驟 步驟2：將上述分散介質與包含粒子A及粒子B之二氧化矽漿料進行混合之步驟 於步驟1中，所獲得之分散介質之pH值較佳為以研磨液組合物之pH值成為所需值之方式加以調整。 於本發明中，所謂「研磨液組合物中之各成分之含量」，係指將研磨液組合物用於研磨之時點之上述各成分之含量。因此，於已將本發明之研磨液組合物製作為濃縮物之情形時，上述各成分之含量可僅各成分之濃縮量增高。 [研磨液套組] 本發明係關於一種研磨液套組，其係用以製造研磨液組合物之套組，且包含於容器中收納有含有上述粒子A及上述粒子B之二氧化矽漿料之容器裝漿料。本發明之研磨液套組可進而包含被收納至與上述容器裝漿料不同之容器中之pH值6.0以下之分散介質。根據本發明，可提供一種研磨液套組，其可獲得即便於使用二氧化矽粒子作為研磨粒之情形時，亦可不大幅損及粗研磨中之研磨速度而減少粗研磨後之基板表面之長波長波紋之研磨液組合物。 作為本發明之研磨液套組，例如可列舉如下研磨液套組(2液型研磨液組合物)：將含有上述粒子A及上述粒子B之二氧化矽漿料(第1液)、與包含被研磨物之研磨所使用之可調配至研磨液組合物中之其他成分之溶液(第2液)以相互未混合之狀態進行保存，且於使用時將該等進行混合。作為可調配至研磨液組合物中之其他成分，例如可列舉pH值調整劑、氧化劑等。於上述第1液及第2液中亦可分別視需要而含有任意成分。作為該任意成分，例如可列舉：增黏劑、分散劑、防銹劑、鹼性物質、研磨速度提昇劑、界面活性劑、高分子化合物等。 [被研磨基板] 作為本發明之研磨液組合物所研磨之對象之被研磨基板係用於製造磁碟基板之基板，例如可列舉：經鍍Ni-P之鋁合金基板、或矽酸玻璃、鋁矽酸玻璃、結晶化玻璃、強化玻璃等玻璃基板，就強度與容易操作性之觀點而言，較佳為經鍍Ni-P之鋁合金基板。於本發明中，所謂「經鍍Ni-P之鋁合金基板」，係指於對鋁合金基材之表面進行研削後，進行無電解鍍Ni-P處理而獲得者。於使用本發明之研磨液組合物對被研磨基板之表面進行研磨之步驟後，進行利用濺鍍等於該基板表面形成磁性層之步驟，藉此可製造磁碟。關於被研磨基板之形狀，例如可列舉：碟片狀、板狀、塊狀、角柱狀等具有平面部之形狀、或透鏡等具有曲面部之形狀，較佳為碟片狀之被研磨基板。於碟片狀之被研磨基板之情形時，其外徑例如為10～120 mm，其厚度例如為0.5～2 mm。 通常，磁碟係使經過研削步驟之被研磨基板經過粗研磨步驟、精研磨步驟進行研磨後，經過磁性層形成步驟而製造。本發明之研磨液組合物較佳為用於粗研磨步驟中之研磨。 [磁碟基板之製造方法] 本發明係關於一種磁碟基板之製造方法(以下，亦稱為「本發明之基板製造方法」)，其包括使用本發明之研磨液組合物對被研磨基板進行研磨之步驟(以下，亦稱為「使用本發明之研磨液組合物之研磨步驟」)。 於使用本發明之研磨液組合物之研磨步驟中，例如利用貼附有研磨墊之壓盤夾住被研磨基板，並將本發明之研磨液組合物供於研磨面，一面施加壓力一面轉動研磨墊或被研磨基板，藉此對被研磨基板進行研磨。 關於使用本發明之研磨液組合物之研磨步驟中之研磨負荷，就提高研磨速度及減少長波長波紋之觀點而言，較佳為30 kPa以下，更佳為25 kPa以下，進而較佳為20 kPa以下，並且，較佳為3 kPa以上，更佳為5 kPa以上，進而較佳為7 kPa以上。於本發明中，所謂「研磨負荷」，係指於研磨時對被研磨基板之被研磨面施加之壓盤之壓力。研磨負荷之調整可藉由向壓盤或基板等之氣壓或重物之負載而進行。 關於使用本發明之研磨液組合物之研磨步驟中之被研磨基板每1 cm2
之研磨量，就提高研磨速度及減少長波長波紋之觀點而言，較佳為0.20 mg以上，更佳為0.30 mg以上，進而較佳為0.40 mg以上，並且，就同樣之觀點而言，較佳為2.50 mg以下，更佳為2.00 mg以下，進而較佳為1.60 mg以下。 關於使用本發明之研磨液組合物之研磨步驟中之被研磨基板每1 cm2
之研磨液組合物之供給速度，就經濟性之觀點而言，較佳為2.5 mL/min以下，更佳為2.0 mL/min以下，進而較佳為1.5 mL/min以下，並且，就提高研磨速度之觀點而言，被研磨基板每1 cm2
之研磨液組合物之供給速度較佳為0.01 mL/min以上，更佳為0.03 mL/min以上，進而較佳為0.05 mL/min以上。 作為向研磨機供給本發明之研磨液組合物之方法，例如可列舉使用泵等連續地進行供給之方法。於向研磨機供給研磨液組合物時，除以含有所有成分之1液之形式進行供給之方法以外，考慮研磨液組合物之保存穩定性等，亦可分成複數種調配用成分液，以2液以上之形式進行供給。於後者之情形時，例如於供給配管中或被研磨基板上混合上述複數種調配用成分液，而成為本發明之研磨液組合物。 根據本發明之基板製造方法，可發揮如下效果：可不大幅損及粗研磨中之研磨速度而減少粗研磨後之基板表面之長波長波紋，因此可高效率地製造基板品質已得到提高之磁碟基板。 [研磨方法] 本發明係關於一種基板之研磨方法(以下，亦稱為本發明之研磨方法)，其包括使用本發明之研磨液組合物之研磨步驟。 藉由使用本發明之研磨方法，可發揮如下效果：可不大幅損及粗研磨中之研磨速度而減少粗研磨後之基板表面之長波長波紋，因此可提高基板品質已得到提高之磁碟基板之生產性。具體之研磨方法及條件可設為與上述本發明之基板製造方法相同。 [實施例] 以下，藉由實施例進一步詳細地說明本發明，但該等為例示性者，本發明並不限於該等實施例。 1.研磨液組合物之製備 使用表1之研磨粒(非球狀二氧化矽粒子A、球狀二氧化矽粒子B、氧化鋁研磨粒C)、pH值調整劑(硫酸)、氧化劑(過氧化氫)、及水而製備實施例1～15及比較例1～7之研磨液組合物(表2)。製備係預先混合水、pH值調整劑及氧化劑而製備分散介質，將分散介質與包含研磨粒之漿料進行混合而進行。研磨液組合物中之各成分之含量為研磨粒：6.0質量%、硫酸：0.5質量%、過氧化氫：0.5質量%。研磨液組合物之pH值為1.4。粒子A1～4、6及粒子B1～6為藉由水玻璃法所製造之膠體二氧化矽粒子。粒子A5為煙熏二氧化矽粒子。粒子A6為沈澱法二氧化矽粒子。pH值係採用使用pH計(東亞DKK公司製造)進行測定，並將電極浸漬於研磨液組合物中2分鐘後之數值(以下相同)。 [表1]
2.各參數之測定方法 [二氧化矽粒子之平均短徑、平均縱橫比及平均球形度之測定方法] 將利用TEM(日本電子公司製造之「JEM-2000FX」，80 kV，1～5萬倍)對二氧化矽粒子進行觀察所得之照片利用掃描儀以圖像資料之形式輸入至個人電腦中，使用分析軟體(三谷商事「WinROOF(Ver.3.6)」)對500個二氧化矽粒子之投影圖像如下述般進行分析。 求出各二氧化矽粒子之短徑及長徑，而獲得短徑之平均值(平均短徑)。進而，根據用長徑除以短徑所得之值而獲得縱橫比之平均值(平均縱橫比)。進而，藉由下述式自各二氧化矽粒子之面積S與周長L算出各二氧化矽粒子之球形度，並獲得球形度之平均值(平均球形度)。 球形度＝4π×S/L2
[二氧化矽粒子之平均一次粒徑之測定方法] 二氧化矽粒子之平均一次粒徑係使用藉由BET法算出之BET比表面積S(m2
/g)，根據下述式而算出。 平均一次粒徑(nm)＝2727/S BET比表面積S係於進行下述[預處理]後，將測定樣品約0.1 g於測定單元中進行精確稱量直至小數點後4位(0.1 mg之位)，於即將測定比表面積之前於110℃之氛圍下乾燥30分鐘後，使用比表面積測定裝置(Micromeritic自動比表面積測定裝置，Flowsorb III2305，島津製作所製造)，並藉由BET法而測得。 [預處理] 將漿料狀之粒子取至培養皿中，於150℃之熱風乾燥機內乾燥1小時。利用瑪瑙研缽將乾燥後之試樣較細地粉碎而獲得測定樣品。 [二氧化矽粒子之平均二次粒徑及CV值之測定方法] 利用離子交換水對二氧化矽粒子進行稀釋，製備含有二氧化矽粒子0.02質量%之分散液並設為試樣，使用動態光散射裝置(大塚電子公司製造之「DLS-7000」)，於下述條件下進行測定。將所獲得之以重量換算計之粒度分佈之累積成為整體之50%之粒徑(D50)設為平均二次粒徑。同時，用所獲得之重量換算分佈中之標準偏差除以上述平均二次粒徑並乘以100，將所得之值設為CV值(單位：%)。 測定條件：試樣量 30 mL ：雷射 He-Ne，3.0 mW，633 nm ：散射光檢測角 90° ：累計次數 200次 [氧化鋁研磨粒之平均二次粒徑之測定方法] 將含有Poiz 530(花王公司製造，聚羧酸型高分子界面活性劑)0.5質量%之水溶液作為分散介質，投入至下述測定裝置內，繼而以透過率成為75～95%之方式投入樣品(氧化鋁粒子)，其後施加5分鐘超音波，然後對粒徑進行測定。 測定機器：堀場製作所製造 雷射繞射/散射式粒度分佈測定裝置LA920 循環強度：4 超音波強度：4 3.基板之研磨 使用所製備之實施例1～15及比較例1～7之研磨液組合物，於下述研磨條件下對被研磨基板進行研磨。 [研磨條件] 研磨機：兩面研磨機(9B型兩面研磨機，SpeedFam公司製造) 被研磨基板：經鍍Ni-P之鋁合金基板，厚度：1.27 mm、直徑95 mm，片數：10片 研磨液：研磨液組合物 研磨墊：麂皮型(發泡層：聚胺基甲酸酯彈性體)，厚度：1.0 mm，平均氣孔徑：30 μm，表面層之壓縮率：2.5%(Filwel公司製造) 壓盤轉數：40 rpm 研磨負荷：9.8 kPa(設定值) 研磨液供給量：60 mL/min 研磨時間：二氧化矽研磨粒5分30秒，氧化鋁研磨粒3分30秒 4.評價方法 [研磨速度之評價] 實施例1～15及比較例1～7之研磨液組合物之研磨速度係如下述般進行評價。首先，使用天平(Sartorius公司製造，「BP-210S」)測定研磨前後之各基板每1片之重量，並根據各基板之質量變化求出質量減少量。用全部10片之平均之質量減少量除以研磨時間，將所得之值設為研磨速度，並藉由下述式而算出。 質量減少量(g)＝{研磨前之質量(g)－研磨後之質量(g)} 研磨速度(mg/min)＝質量減少量(mg)/研磨時間(min) [長波長波紋之評價] 於下述條件下對研磨後之10片之兩面、計20面進行測定。將該20面之測定值之平均值作為基板之長波長波紋而算出。於本評價中，關於長波長波紋，就提高磁碟之記錄密度之觀點而言，較佳為3.0 Å以下，更佳為2.7 Å以下，進而較佳為2.4 Å以下，進而較佳為2.1 Å以下。 測定機器：KLA Tencor公司製造之「OptiFLAT III」 內外半徑(Radius Inside/Out)：14.87 mm/47.83 mm 中心X/Y(Center X/Y)：55.44 mm/53.38 mm 低截止值(Low Cutoff)：2.5 mm 內罩(Inner Mask)：18.50 mm 外罩(Outer Mask)：45.5 mm 長週期(Long Period)：2.5 mm Wa校正(Wa Correction)：0.9 Rn校正(Rn Correction)：1.0 澤尼克項數(No Zernike Terms)：8 [氧化鋁殘留之評價方法] 利用掃描式電子顯微鏡(日立製作所公司製造：S-4000)以1萬倍對研磨後之各基板之表面進行觀察，並進行下述3等級評價。 ○(A)：於表面完全未觀察到氧化鋁殘留物者 △(B)：於表面略微觀察到氧化鋁殘留物者 ×(C)：於表面觀察到氧化鋁殘留物者 5.結果 將各評價之結果示於表2。 [表2]
(實施例1～15及比較例1～7之研磨液組合物之成分)研磨粒：6.0質量%；pH值調整劑：硫酸0.5質量%；氧化劑：過氧化氫0.5質量%；剩餘：水；pH值：1.4 如表2所表示，與粒子A之平均短徑小於粒子B之比較例1～2、僅含有粒子B作為研磨粒之比較例3、僅含有粒子A作為研磨粒之比較例4、含有氧化鋁粒子作為研磨粒之比較例5、粒子A之平均短徑未達105 nm之比較例6～7相比，含有粒子A與粒子B作為研磨粒且粒子A之平均短徑為105 nm以上且大於粒子B之實施例1～15不會大幅損及研磨速度而減少研磨後之長波長波紋。 [產業上之可利用性] 根據本發明，可一面維持研磨速度一面減少研磨後之長波長波紋，因此可提高磁碟基板之製造之生產性。本發明可較佳地用於磁碟基板之製造。The present invention is based on the following insights: by using a slurry composition containing non-spherical silica particles having an average shorter diameter larger than spherical silica particles and spherical silica particles as abrasive particles for rough polishing , Can reduce long-wavelength ripples without greatly reducing the polishing speed. Generally, in the manufacture of magnetic disk substrates, if long-wavelength ripples can be reduced, the productivity will also be improved. By using non-spherical silica particles having an average shorter diameter larger than spherical silica particles and spherical silica particles together as abrasive particles, it is possible to reduce the long-wavelength ripple without greatly reducing the polishing speed. It is not clear, but it is estimated as follows. It is believed that by using non-spherical silica particles whose average shorter diameter is larger than that of spherical silica particles during grinding, the spherical silica particles will enter the gaps between the non-spherical silica particles, and the grinding during grinding The filling rate of abrasive grains between the pad and the polished surface of the substrate becomes higher. Therefore, it is considered that the cutting area of the substrate increases due to the increase of the area where the abrasive grains contact the surface to be polished; and the polishing load applied to the substrate during polishing is uniformized in a wide range, etc., so that the polishing speed can be maintained or increased. Furthermore, it is believed that the vibration between the polishing pad and the substrate during polishing can be reduced, and the long-wavelength ripple can be reduced. It is considered that the above-mentioned effect becomes particularly remarkable when the average short diameter of the spherical silica particles is greater than or equal to a certain value. However, the present invention may also be interpreted without being limited to these mechanisms. That is, the polishing liquid composition of the present invention relates to the following polishing liquid composition for magnetic disk substrates, which includes non-spherical silica particles A, spherical silica particles B, and water, and has a pH of 0.5 or more and 6.0 or less, the average short diameter of the non-spherical silica particles A is 105 nm or more and greater than the average short diameter of the spherical silica particles B; or it relates to the following polishing liquid composition for magnetic disk substrates, which is It is made by mixing at least non-spherical silica particles A, spherical silica particles B and water, with a pH of 0.5 or more and 6.0 or less. The average short diameter of the aforementioned non-spherical silica particles A is 105 nm Above and larger than the average short diameter of the spherical silica particles B described above. In the present invention, the so-called "waviness" of the substrate refers to the unevenness on the surface of the substrate with a longer wavelength of roughness. In the present invention, the so-called "long-wavelength ripple" refers to the ripple observed at a wavelength of 500 to 5000 μm. By reducing the long-wavelength ripples on the surface of the substrate after polishing, the flying height of the magnetic head can be reduced in the magnetic disk drive, and the recording density of the magnetic disk can be increased. The long-wavelength ripple on the surface of the substrate can be measured by the method described in the examples. [Non-spherical silica particles A] As described above, the polishing liquid composition of the present invention contains non-spherical silica particles A (hereinafter, also referred to as "particles A"). The average sphericity of the particles A is preferably 0.60 or more, more preferably 0.70 or more, and is preferably 0.85 or less, more preferably 0.80 or less, and still more preferably 0.75 or less. In the present invention, the average sphericity of particle A is the average value of the sphericity of at least 200 particles A. The sphericity of the particle A can be calculated using the observation using TEM and image analysis software, etc., to obtain the projected area S and the projected perimeter L of the particle A, and calculate it according to the following formula. Sphericity=4π×S/L 2 The sphericity system of each particle A is the same as the above-mentioned average sphericity, preferably 0.60 or more, more preferably 0.70 or more, and preferably 0.85 or less, more preferably 0.80 or less, More preferably, it is 0.75 or less. The average short diameter of particle A is larger than the average short diameter of spherical silica particle B. Regarding the average short diameter of particle A, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is 105 nm or more, preferably 160 nm or more, more preferably 180 nm or more, and still more preferably 185 nm or more, and , Preferably 500 nm or less, more preferably 450 nm or less, and still more preferably 400 nm or less. In the present invention, the average short diameter of the particle A is the average value of the short diameters of at least 200 particles A. The short diameter of the particle A is the length of the short side of the rectangle when the smallest rectangle circumscribed to the image of the projected particle A is drawn using TEM observation and image analysis software, for example. Similarly, the long diameter of the particle A is the length of the long side of the aforementioned rectangle. Regarding the average aspect ratio of particle A, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 1.10 or more, more preferably 1.15 or more, and still more preferably 1.20 or more, and from the same viewpoint, It is preferably 2.00 or less, more preferably 1.70 or less, and still more preferably 1.50 or less. In the present invention, the average aspect ratio of particle A is the average of the aspect ratios of at least 200 particles A. The aspect ratio of particle A is the ratio of the long diameter to the short diameter of the particle A (long diameter/short diameter). Regarding the BET specific surface area of the particle A, from the viewpoint of increasing the polishing rate and reducing long-wavelength ripples, it is preferably 50 m 2 /g or less, more preferably 45 m 2 /g or less, and still more preferably 40 m 2 / g or less, and preferably 10 m 2 /g or more, more preferably 15 m 2 /g or more, and still more preferably 20 m 2 /g or more. In the present invention, the BET specific surface area can be calculated by the nitrogen adsorption method (hereinafter also referred to as "BET method"). Specifically, it can be calculated by the measurement method described in the examples. Regarding the average primary particle diameter D1 A of the particle A, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 60 nm or more, more preferably 70 nm or more, and still more preferably 80 nm or more, and From the viewpoint of reducing long-wavelength ripples, it is preferably 200 nm or less, more preferably 150 nm or less, and still more preferably 120 nm or less. In the present invention, the average primary particle size of the particles A can be calculated according to the following formula using the BET specific surface area S (m 2 /g). Specifically, it can be calculated by the measurement method described in the examples. Average primary particle size (nm) = 2727/S Regarding the average secondary particle size D2 A of particle A, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 160 nm or more, more preferably 180 nm or more It is more preferably 200 nm or more, and from the same viewpoint, it is preferably 500 nm or less, more preferably 400 nm or less, and still more preferably 350 nm or less. In the present invention, the so-called average secondary particle size of particle A refers to the average particle size based on the scattering intensity distribution measured by the dynamic light scattering method. In the present invention, the so-called "scattering intensity distribution" refers to the conversion of the weight of particles below sub-micrometers obtained by dynamic light scattering (DLS: Dynamic Light Scattering) or quasi-elastic light scattering (QLS: Quasielastic Light Scattering) Particle size distribution. Specifically, the average secondary particle size of particle A in the present invention can be obtained by the method described in the examples. Regarding the particle size ratio (D2 A /D1 A ) of the average secondary particle size D2 A to the average primary particle size D1 A of particle A, from the viewpoint of increasing the grinding speed and reducing long-wavelength ripples, it is preferably 2.00 or more. It is more preferably 2.50 or more, still more preferably 2.50 or more, and from the viewpoint of increasing the polishing rate, it is preferably 4.00 or less, more preferably 3.00 or less, and still more preferably 2.80 or less. In the present invention, the particle size ratio (D2 A /D1 A ) may refer to the degree of irregularity of the particle A. Generally, the average secondary particle size D2 A measured by dynamic light scattering method is used to detect the light scattering in the long direction when the silica particles are irregular particles. Therefore, considering the length of the long direction and the short direction, the irregular shape The greater the degree, the greater the value will become. The average primary particle size D1 A converted from the specific surface area value measured by the BET method is based on the calculated particle volume and expressed in sphere conversion. Therefore, if compared with the average secondary particle size D2 A , it becomes a larger Small value. From the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, the particle size ratio (D2 A /D1 A ) is preferably also larger in the above range. Regarding the coefficient of variation of the secondary particle size of particle A (hereinafter also referred to as "CV value"), from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 10% or more, more preferably 15% or more. It is more preferably 20% or more, and more preferably 35% or less, more preferably 30% or less, and more preferably 28% or less. In the present invention, the so-called CV value of the secondary particle size of particle A refers to the scattering intensity distribution based on the detection angle of 90° by the dynamic light scattering method, and the standard deviation of the measured secondary particle size is divided by the average The value obtained by multiplying the secondary particle size by 100 (unit: %). Specifically, the above-mentioned CV value can be measured by the method described in the examples. Examples of particles A include colloidal silica, smoked silica, surface-modified silica, and precipitation silica. From the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, the particle A is preferably at least one selected from colloidal silica and precipitation silica, more preferably colloidal silica, and more preferably The following colloidal silica with a specific shape. Regarding the shape of particle A, from the viewpoint of increasing the grinding speed and reducing long-wavelength ripples, it is preferable to use silica particles with a particle size smaller than the secondary particle size of particle A as the precursor particles, and a plurality of precursor particles are aggregated Or a fusion shape. From the same point of view, the particle A is preferably selected from the group consisting of a sugar-type silicon dioxide particle Aa, a special-shaped silicon dioxide particle Ab, a special-shaped and sugar-type silicon dioxide particle Ac, and a precipitation method silicon dioxide particle At least one kind of silicon dioxide particles in Ad is more preferably one or more selected from the group consisting of special-shaped silicon dioxide particles Ab and precipitation method silicon dioxide particles Ad, and more preferably special-shaped silicon dioxide particles Ab. Particle A can be one kind of non-spherical silica particles, or a combination of two or more non-spherical silica particles. In the present invention, Jinping sugar-type silica particles Aa (hereinafter, also referred to as "particles Aa") refer to silica particles having specific wart-like protrusions on the surface of spherical particles (refer to FIG. 1). The particle Aa is preferably a shape in which the largest precursor particle a1 and one or more precursor particles a2 whose particle size is less than 1/5 of the precursor particle a1 are aggregated or fused. The particle Aa is preferably a state in which a part of a plurality of precursor particles a2 with a smaller particle size is embedded in one precursor particle a1 with a larger particle size. The particles Aa can be obtained, for example, by the method described in Japanese Patent Laid-Open No. 2008-137822. The particle diameter of the precursor particles can be calculated in the form of equivalent circle diameter, that is, the diameter of a circle with the same area as the projection area of the precursor particles. The equivalent circle diameter is based on the observation image using TEM or the like in one precursor The measurement is performed within the particles. The particle diameters of the precursor particles of the silicon dioxide particles Ab and the silicon dioxide particles Ac can also be obtained in the same way. In the present invention, the special-shaped silica particle Ab (hereinafter, also referred to as "particle Ab") refers to two or more precursor particles, preferably two or more and 10 or less precursor particles agglomerate or Silica particles in the shape of fusion (refer to Figure 2). The particle Ab is preferably a shape formed by agglomeration or fusion of two or more precursor particles within 1.5 times the particle size based on the particle size of the smallest precursor particle. The particles Ab can be obtained, for example, by the method described in Japanese Patent Laid-Open No. 2015-86102. In the present invention, the special-shaped and sugar-shaped silicon dioxide particles Ac (hereinafter, also referred to as "particle Ac") use the particle Ab as the precursor particle c1, and the largest precursor particle c1 and particle size are the precursors. A shape formed by aggregation or fusion of one or more precursor particles c2 that are less than 1/5 of the particle c1. In the present invention, the precipitation method silica particles Ad (hereinafter, also referred to as "particle Ad") refers to the silica particles produced by the precipitation method (refer to FIG. 3). Regarding the shape of the particles Ad, from the viewpoints of increasing the polishing rate and reducing scratches, it is preferably a shape in which a plurality of primary particles are aggregated. Examples of methods for producing particles Ad include known methods such as methods described in Tosoh Research, Technical Report Vol. 45 (2001), pages 65 to 69. As a specific example of the method for producing the particles Ad, a precipitation method in which silica particles such as sodium silicate are neutralized by a mineral acid such as sulfuric acid and the like is precipitated. It is preferable to carry out the neutralization reaction at a relatively high temperature and under alkaline conditions, whereby the growth of the primary particles of silica proceeds faster, and the primary particles aggregate into flocs and precipitate, preferably This is further crushed to obtain particles Ad. The particle A preferably includes one or more selected from the group consisting of particles Aa, Ab, Ac, and Ad. Regarding the total amount of particles Aa, Ab, Ac, and Ad in particle A, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 50% by mass or more, more preferably 70% by mass or more, and still more preferable It is 80% by mass or more, more preferably 90% by mass or more, and still more preferably substantially 100% by mass. From the viewpoint of suppressing the reduction of the grinding speed in the rough grinding and reducing the long-wavelength ripples, as well as reducing the protrusion defects after the rough grinding and the fine grinding, the particle A can also be made by flame melting method, sol-gel method, and pulverization However, it is preferable to use silica particles produced by the particle growth method (hereinafter, also referred to as the "water glass method") using an alkaline aqueous solution of silicic acid as a starting material. The use form of the particles A is preferably a slurry form. The method of adjusting the particle size distribution of the particle A includes, for example, a method of adding particles to become a new nucleus during the growth of the particle in its manufacturing stage to have a desired particle size distribution, or mixing particles with different sizes. A method to obtain the required particle size distribution with more than two kinds of silica particles with diameter distribution. Regarding the content of particles A in the polishing liquid composition, from the viewpoints of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more , More preferably 2% by mass or more, and, from the viewpoint of economy, preferably 30% by mass or less, more preferably 25% by mass or less, still more preferably 20% by mass or less, and still more preferably 15 Less than mass%. [Spherical silica particles B] As described above, the polishing liquid composition of the present invention contains spherical silica particles B (hereinafter, also referred to as "particle B"). In the present invention, the average sphericity of the particles B is preferably 0.86 or more from the viewpoints of suppressing the reduction in the polishing speed during rough polishing, reducing long-wavelength ripples, and reducing protrusion defects after rough polishing and fine polishing , More preferably, it is 0.88 or more, and from the same viewpoint, it is 1.00 or less, Preferably it is 0.95 or less. The average sphericity of particle B can be calculated by the same method as particle A. The sphericity of each particle B is the same as the above-mentioned average particle diameter, and is preferably 0.86 or more, more preferably 0.88 or more, and is 1.00 or less, preferably 0.95 or less. Regarding the average sphericity of the particle B, from the viewpoint of showing the effect of the present invention, it is preferably greater than the average sphericity of the particle A. Regarding the difference between the average sphericity of the particle A and the particle B, from the viewpoint of exhibiting the effect of the present invention, it is preferably 0.02 or more, more preferably 0.05 or more, and still more preferably 0.08 or more, and from the same viewpoint In particular, it is preferably 0.50 or less, more preferably 0.30 or less, and still more preferably 0.25 or less. The average short diameter of the particle B is smaller than the average short diameter of the particle A from the viewpoint of increasing the polishing speed and reducing long-wavelength waviness. With regard to the average short diameter of the particle B, from the same viewpoint, it is preferably 15 nm or more, more preferably 45 nm or more, still more preferably 85 nm or more, and preferably 200 nm or less, more preferably 150 nm or less, more preferably 130 nm or less. The average short diameter of particle B can be calculated by the same method as particle A. Regarding the ratio of the average short diameter of particle A to the average short diameter of particle B (average short diameter of particle A)/(average short diameter of particle B) of the present invention, from the viewpoint of increasing the grinding speed and reducing long-wavelength ripples , Is more than 1.0, preferably 1.5 or more, more preferably 2.0 or more, still more preferably 2.5 or more, still more preferably 3.0 or more, and from the same viewpoint, preferably 30.0 or less, more preferably 15.0 Hereinafter, it is more preferably 10.0 or less, still more preferably 7.0 or less, and still more preferably 4.0 or less. The average aspect ratio of the particles B is 1.00 or more, and from the viewpoint of increasing the polishing speed and reducing long-wavelength waviness, it is preferably 1.15 or less, more preferably 1.10 or less, and still more preferably 1.08 or less. The average aspect ratio and aspect ratio of particle B can be calculated by the same method as particle A. Regarding the average primary particle size D1 B of the particle B, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 15 nm or more, more preferably 30 nm or more, and still more preferably 40 nm or more, and From the same viewpoint, it is preferably 150 nm or less, more preferably 120 nm or less, and still more preferably 100 nm or less. The average primary particle size of particle B can be calculated by the same method as particle A. Regarding the average secondary particle size D2 B of the particles B, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 20 nm or more, more preferably 45 nm or more, and still more preferably 85 nm or more, and, From the same viewpoint, it is preferably 200 nm or less, more preferably 180 nm or less, and still more preferably 160 nm or less. The average secondary particle size of particle B can be calculated by the same method as particle A. Regarding the particle size ratio (D2 B /D1 B ) of the average secondary particle size D2 B of the particle B to the average primary particle size D1 B , from the viewpoint of increasing the grinding speed and reducing long-wavelength ripples, it is preferably 1.05 or more. It is more preferably 1.50 or more, still more preferably 2.00 or more, and from the same viewpoint, it is preferably 4.00 or less, more preferably 3.50 or less, and still more preferably 3.00 or less. Regarding the CV value of the secondary particle size of the particle B, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 15% or more, more preferably 18% or more, and still more preferably 20% or more, and, From the same viewpoint, it is preferably 45% or less, more preferably 40% or less, and still more preferably 35% or less. The CV value of the secondary particle size of particle B can be calculated by the same method as particle A. Examples of particles B include colloidal silica, smoked silica, and surface-modified silica. As the particle B, for example, colloidal silica that is usually commercially available can meet the conditions. From the viewpoints of suppressing the reduction in polishing speed, reducing long-wavelength ripples, and reducing protrusion defects, colloidal silica is preferred as the particle B. Particle B can be one kind of spherical silica particles, or a combination of two or more spherical silica particles. From the viewpoint of increasing the grinding speed, reducing long-wavelength ripples, and reducing protrusion defects, the particles B can also be produced by flame melting, sol-gel, and crushing methods, but preferably by the water glass method And the manufactured silicon dioxide particles. The use form of the particles B is preferably a slurry form. Regarding the content of particles B in the polishing liquid composition of the present invention, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1.0 Mass% or more, and from the viewpoint of economy, it is preferably 20.0 mass% or less, more preferably 15.0 mass% or less, and still more preferably 10.0 mass% or less. Regarding the mass ratio A/B of the content of particles A to the content of particles B in the polishing liquid composition of the present invention, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 5/95 or more, more preferably 20/80 or more, more preferably 40/60 or more, still more preferably 50/50 or more, still more preferably 51/49 or more, still more preferably 60/40 or more, and from the same viewpoint , Preferably 95/5 or less, more preferably 90/10 or less, still more preferably 80/20 or less, and still more preferably 75/25 or less. When the particle B is a combination of two or more spherical silica particles, the content of the particle B refers to the total content of these particles. The content of particle A is also the same. When the polishing liquid composition of the present invention contains silica particles other than particle A and particle B, the total content of particle A and particle B relative to all silica particles in the polishing liquid composition is increased From the viewpoint of polishing speed and reduction of long-wavelength ripples, it is preferably 98.0% by mass or more, more preferably 98.5% by mass or more, still more preferably 99.0% by mass or more, still more preferably 99.5% by mass or more, and still more preferably 99.8% by mass or more, and more preferably substantially 100% by mass. [pH Adjuster] The pH of the polishing liquid composition of the present invention is 0.5 or more and 6.0 or less from the viewpoint of increasing the polishing rate and reducing long-wavelength ripples. From the viewpoints of increasing the polishing speed, reducing long-wavelength ripples, and adjusting the pH value, the polishing liquid composition of the present invention preferably contains a pH adjusting agent. As the pH adjuster, from the same viewpoint, one or more selected from the group consisting of acids and salts is preferred. Examples of the acid include inorganic acids such as nitric acid, sulfuric acid, sulfurous acid, persulfuric acid, hydrochloric acid, perchloric acid, phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid, polyphosphoric acid, and aminosulfuric acid; organic phosphoric acid, organic phosphine Acids and other organic acids. Among them, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably at least one selected from phosphoric acid, sulfuric acid and 1-hydroxyethylene-1,1-diphosphonic acid, and more preferably selected from sulfuric acid And at least one of phosphoric acid, more preferably sulfuric acid. Examples of the salt include salts of the above-mentioned acids and at least one selected from the group consisting of metals, ammonia, and alkylamines. Specific examples of the aforementioned metals include metals belonging to Groups 1 to 11 of the periodic table. Among them, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, the salt of the above-mentioned acid and a metal belonging to Group 1 or ammonia is preferred. Regarding the content of the pH adjuster in the polishing liquid composition, it is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, from the viewpoint of reducing the long-wavelength ripple without greatly impairing the polishing speed. It is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, and from the same viewpoint, it is preferably 5.0% by mass or less, more preferably 4.0% by mass or less, and still more preferably 3.0% by mass or less , And more preferably 2.5% by mass or less. [Oxidant] From the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, the polishing liquid composition of the present invention may also contain an oxidizing agent. As the oxidizing agent, from the same viewpoint, for example, peroxide, permanganic acid or its salt, chromic acid or its salt, peroxy acid or its salt, oxyacid or its salt, nitric acid, sulfuric acid, etc. . Among them, preferably at least one selected from hydrogen peroxide, iron (III) nitrate, peracetic acid, ammonium peroxodisulfate, iron (III) sulfate, and ammonium iron (III) sulfate, to increase the grinding speed From the viewpoint, the viewpoint that the metal ion does not adhere to the surface of the substrate to be polished, and the viewpoint of the ease of acquisition, hydrogen peroxide is more preferable. These oxidizing agents can be used individually or in mixture of two or more types. Regarding the content of the above-mentioned oxidizing agent in the polishing liquid composition, from the viewpoint of increasing the polishing rate, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and still more preferably 0.1% by mass or more, and it increases From the viewpoint of polishing rate and reduction of long-wavelength ripples, it is preferably 4.0% by mass or less, more preferably 2.0% by mass or less, and still more preferably 1.5% by mass or less. [Water] The polishing liquid composition of the present invention contains water as a medium. As water, distilled water, ion-exchange water, pure water, ultrapure water, etc. are mentioned. Regarding the water content in the polishing liquid composition, from the viewpoint of easy handling of the polishing liquid composition, it is preferably 61% by mass or more, more preferably 70% by mass or more, and still more preferably 80% by mass or more It is still more preferably 85% by mass or more, and from the same viewpoint, it is preferably 99% by mass or less, more preferably 98% by mass or less, and still more preferably 97% by mass or less. [Other Ingredients] The polishing liquid composition of the present invention may also contain other ingredients as needed. Examples of other components include thickeners, dispersants, rust inhibitors, alkaline substances, polishing rate enhancers, surfactants, polymer compounds, and the like. The above-mentioned other components are preferably contained in the polishing liquid composition within a range that does not impair the effect of the present invention. The content of the above-mentioned other components in the polishing liquid composition is preferably 0% by mass or more, more preferably more than 0% by mass %, more preferably 0.1% by mass or more, more preferably 10% by mass or less, more preferably 5% by mass or less. [Alumina abrasive grains] Regarding the polishing liquid composition of the present invention, from the viewpoint of reducing protrusion defects, the content of alumina abrasive grains is preferably 0.1% by mass or less, more preferably 0.05% by mass or less, and still more preferably 0.02% by mass or less, and more preferably substantially free of alumina abrasive grains. In the present invention, the so-called "substantially free of alumina abrasive grains" may include the following situations: no alumina particles; no alumina particles that function as abrasive grains; or The amount of alumina particles affected. Regarding the content of alumina particles in the polishing liquid composition, relative to the total amount of abrasive particles in the polishing liquid composition, it is preferably 2% by mass or less, more preferably 1% by mass or less, and still more preferably 0.5% by mass or less , And more preferably substantially 0% by mass. [pH value] Regarding the pH value of the polishing liquid composition of the present invention, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is 0.5 or more, preferably 0.7 or more, more preferably 0.9 or more, and even more preferably It is 1.0 or more, more preferably 1.2 or more, still more preferably 1.4 or more, and from the same viewpoint, it is 6.0 or less, preferably 4.0 or less, more preferably 3.0 or less, and still more preferably 2.5 or less, More preferably, it is 2.0 or less. The pH value is preferably adjusted using the above-mentioned pH value adjuster. The above-mentioned pH value is the pH value of the polishing liquid composition at 25° C., which can be measured with a pH meter, and is preferably the value after immersing the electrode of the pH meter in the polishing liquid composition for 2 minutes. [Method for Producing Polishing Liquid Composition] The polishing liquid composition of the present invention is obtained by blending at least particles A, particles B, and water, and has a pH of 0.5 or more and 6.0 or less. The polishing liquid composition of the present invention can be prepared, for example, by using a known method to prepare a silica slurry containing particles A and particles B, and optionally a pH adjuster, an oxidizing agent, and other components, and to adjust the pH value. It is manufactured by making it 0.5 or more and 6.0 or less. Therefore, the present invention relates to a method for manufacturing a silica slurry for manufacturing a polishing liquid composition, which includes the step of at least preparing particles A, particles B and water. Furthermore, the present invention relates to a manufacturing method of a polishing liquid composition, which includes the step of preparing at least particles A, particles B, and water, and, if necessary, the step of adjusting the pH value to 0.5 or more and 6.0 or less. In the present invention, the so-called "preparation" includes the mixing of particles A, particles B, water, and optionally a pH adjuster, oxidizing agent, and other components at the same time or in any order. The above-mentioned preparation can be performed using a mixer such as a homomixer, a homogenizer, an ultrasonic dispersion machine, and a wet ball mill, for example. The preferable blending amount of each component in the manufacturing method of the polishing liquid composition is the same as the preferable content of each component in the polishing liquid composition. From the viewpoint of the dispersibility of silica particles, the manufacturing method of the polishing liquid composition of the present invention preferably includes the following steps. Step 1: Mix water, pH adjuster, and any oxidizing agent to prepare a dispersion medium below pH 6.0. Step 2: Mix the above dispersion medium with the silica slurry containing particles A and B In the step 1, the pH value of the obtained dispersion medium is preferably adjusted in such a way that the pH value of the polishing liquid composition becomes the desired value. In the present invention, the "content of each component in the polishing liquid composition" refers to the content of each of the above-mentioned components when the polishing liquid composition is used for polishing. Therefore, when the polishing liquid composition of the present invention has been made into a concentrate, the content of each of the above-mentioned components can be increased only by the concentrated amount of each component. [Polishing fluid kit] The present invention relates to a polishing fluid kit, which is used to manufacture a polishing fluid composition kit, and contains a silica slurry containing the above-mentioned particles A and the above-mentioned particles B in a container The container is filled with slurry. The polishing liquid set of the present invention may further include a dispersion medium with a pH value of 6.0 or less stored in a container different from the above-mentioned container-packed slurry. According to the present invention, a polishing liquid set can be provided, which can reduce the length of the substrate surface after rough polishing without greatly degrading the polishing speed in rough polishing even when silica particles are used as abrasive grains. Wavelength ripple polishing liquid composition. As the polishing liquid set of the present invention, for example, the following polishing liquid set (two-liquid polishing liquid composition): a silica slurry (first liquid) containing the above-mentioned particles A and the above-mentioned particles B, and The solution (the second liquid) of the other components that are used in the polishing of the object to be polished and can be blended into the polishing liquid composition is stored in an unmixed state, and these are mixed during use. As other components that can be formulated into the polishing liquid composition, for example, a pH adjuster, an oxidizing agent, and the like can be cited. Optionally, optional components may be contained in the first liquid and the second liquid described above, respectively. As this optional component, for example, a thickener, a dispersant, a rust inhibitor, an alkaline substance, a polishing rate improver, a surfactant, a polymer compound, etc. may be mentioned. [Substrate to be polished] The substrate to be polished, which is the object to be polished by the polishing liquid composition of the present invention, is a substrate used to manufacture magnetic disk substrates. Examples include: Ni-P-plated aluminum alloy substrates, or silicate glass, Glass substrates such as aluminosilicate glass, crystallized glass, and strengthened glass are preferably Ni-P-plated aluminum alloy substrates from the standpoint of strength and ease of handling. In the present invention, the so-called "Ni-P-plated aluminum alloy substrate" refers to those obtained after grinding the surface of the aluminum alloy substrate and then performing electroless Ni-P plating. After the step of polishing the surface of the substrate to be polished by using the polishing liquid composition of the present invention, a step of forming a magnetic layer on the surface of the substrate by sputtering is performed, whereby a magnetic disk can be manufactured. Regarding the shape of the substrate to be polished, for example, a disk-shaped, plate-shaped, block-shaped, prismatic shape with a flat portion, or a lens and other shapes with a curved portion, preferably a disk-shaped substrate to be polished. In the case of a disc-shaped substrate to be polished, its outer diameter is, for example, 10 to 120 mm, and its thickness is, for example, 0.5 to 2 mm. Generally, magnetic disks are manufactured by subjecting a substrate to be ground after a grinding step through a rough grinding step and a fine grinding step, and then through a magnetic layer forming step. The polishing liquid composition of the present invention is preferably used for grinding in the rough grinding step. [Method for manufacturing magnetic disk substrate] The present invention relates to a method for manufacturing a magnetic disk substrate (hereinafter, also referred to as "the substrate manufacturing method of the present invention"), which includes applying the polishing liquid composition of the present invention to the substrate to be polished. The polishing step (hereinafter, also referred to as "the polishing step using the polishing liquid composition of the present invention"). In the polishing step using the polishing liquid composition of the present invention, for example, a platen attached with a polishing pad is used to clamp the substrate to be polished, and the polishing liquid composition of the present invention is supplied to the polishing surface, while applying pressure while rotating and polishing The pad or the substrate to be polished, thereby polishing the substrate to be polished. Regarding the polishing load in the polishing step using the polishing liquid composition of the present invention, from the viewpoints of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 30 kPa or less, more preferably 25 kPa or less, and even more preferably 20 kPa or less, and preferably 3 kPa or more, more preferably 5 kPa or more, and still more preferably 7 kPa or more. In the present invention, the so-called "grinding load" refers to the pressure of the pressure plate applied to the polished surface of the polished substrate during polishing. The adjustment of the polishing load can be carried out by applying air pressure or heavy objects to the platen or substrate. Regarding the polishing amount per 1 cm 2 of the substrate to be polished in the polishing step using the polishing liquid composition of the present invention, from the viewpoint of increasing the polishing speed and reducing long-wavelength ripples, it is preferably 0.20 mg or more, more preferably 0.30 mg or more, more preferably 0.40 mg or more, and from the same viewpoint, it is preferably 2.50 mg or less, more preferably 2.00 mg or less, and still more preferably 1.60 mg or less. Regarding the supply rate of the polishing liquid composition per 1 cm 2 of the substrate to be polished in the polishing step using the polishing liquid composition of the present invention, from the viewpoint of economy, it is preferably 2.5 mL/min or less, more preferably 2.0 mL/min or less, more preferably 1.5 mL/min or less, and from the viewpoint of increasing the polishing rate, the supply rate of the polishing liquid composition per 1 cm 2 of the substrate to be polished is preferably 0.01 mL/min or more , More preferably 0.03 mL/min or more, still more preferably 0.05 mL/min or more. As a method of supplying the polishing liquid composition of the present invention to the grinder, for example, a method of continuously supplying it using a pump or the like can be cited. When supplying the polishing liquid composition to the grinder, in addition to the method of supplying it in the form of one liquid containing all the ingredients, considering the storage stability of the polishing liquid composition, etc., it can also be divided into multiple types of compounding component liquids. Supply in the form of liquid or more. In the latter case, for example, the above-mentioned plural kinds of compounding component liquids are mixed in a supply pipe or on a substrate to be polished to form the polishing liquid composition of the present invention. According to the substrate manufacturing method of the present invention, the following effects can be exerted: the long-wavelength ripples on the surface of the substrate after rough polishing can be reduced without greatly degrading the polishing speed during rough polishing, and therefore, a magnetic disk with improved substrate quality can be manufactured efficiently Substrate. [Lapping Method] The present invention relates to a method for polishing a substrate (hereinafter, also referred to as the polishing method of the present invention), which includes a polishing step using the polishing liquid composition of the present invention. By using the polishing method of the present invention, the following effects can be exerted: the long-wavelength ripples on the surface of the substrate after rough polishing can be reduced without greatly degrading the polishing speed in the rough polishing, so that the quality of the magnetic disk substrate with improved substrate quality can be improved. Productivity. The specific polishing method and conditions can be the same as the above-mentioned substrate manufacturing method of the present invention. [Examples] Hereinafter, the present invention will be explained in further detail with examples, but these are illustrative, and the present invention is not limited to these examples. 1. The preparation of the polishing liquid composition uses the abrasive particles in Table 1 (non-spherical silica particles A, spherical silica particles B, and alumina abrasive particles C), pH adjusting agent (sulfuric acid), and oxidizing agent (over Hydrogen oxide), and water to prepare polishing liquid compositions of Examples 1 to 15 and Comparative Examples 1 to 7 (Table 2). The preparation is performed by mixing water, a pH adjuster, and an oxidizing agent in advance to prepare a dispersion medium, and mixing the dispersion medium with a slurry containing abrasive grains. The content of each component in the polishing liquid composition is abrasive grains: 6.0% by mass, sulfuric acid: 0.5% by mass, and hydrogen peroxide: 0.5% by mass. The pH of the polishing liquid composition was 1.4. The particles A1 to 4, 6 and the particles B1 to 6 are colloidal silica particles manufactured by the water glass method. Particle A5 is smoked silica particles. Particle A6 is silica particle by precipitation method. The pH value is measured by using a pH meter (manufactured by Toa DKK), and the electrode is immersed in the polishing liquid composition for 2 minutes (the same applies below). [Table 1] 2. The measurement method of each parameter [Method of measuring the average short diameter, average aspect ratio and average sphericity of silica particles] Will use TEM ("JEM-2000FX" manufactured by JEOL Co., Ltd., 80 kV, 10,000 to 50,000 Times) The photos obtained by observing the silicon dioxide particles were input into a personal computer in the form of image data using a scanner, and the analysis software (Mitani Corporation "WinROOF (Ver.3.6)") was used to analyze the results of 500 silicon dioxide particles. The projected image is analyzed as follows. Calculate the short diameter and long diameter of each silica particle, and obtain the average short diameter (average short diameter). Furthermore, the average value of the aspect ratio (average aspect ratio) is obtained from the value obtained by dividing the long diameter by the short diameter. Furthermore, the sphericity of each silica particle is calculated from the area S and the circumference L of each silica particle by the following formula, and the average value of the sphericity (average sphericity) is obtained. Sphericity=4π×S/L 2 [Method for measuring the average primary particle size of silica particles] The average primary particle size of silica particles is calculated using the BET specific surface area S (m 2 /g) calculated by the BET method , Calculated according to the following formula. Average primary particle size (nm) = 2727/S BET specific surface area S is based on the following [pretreatment], and approximately 0.1 g of the sample to be measured is accurately weighed in the measurement unit to 4 digits after the decimal point (0.1 mg) After drying at 110°C for 30 minutes immediately before measuring the specific surface area, the specific surface area measuring device (Micromeritic automatic specific surface area measuring device, Flowsorb III 2305, manufactured by Shimadzu Corporation) was used and measured by the BET method. [Pretreatment] Take the slurry particles into a petri dish and dry them in a hot air dryer at 150°C for 1 hour. The dried sample is finely pulverized in an agate mortar to obtain a measurement sample. [Method for measuring the average secondary particle size and CV value of silica particles] Dilute the silica particles with ion-exchanged water to prepare a dispersion containing 0.02% by mass of silica particles and use it as a sample. The light scattering device ("DLS-7000" manufactured by Otsuka Electronics Co., Ltd.) was measured under the following conditions. The particle size (D50) at which the obtained particle size distribution calculated in terms of weight becomes 50% of the total particle size (D50) is defined as the average secondary particle size. At the same time, divide the obtained standard deviation in the weight conversion distribution by the above average secondary particle size and multiply it by 100, and set the obtained value as the CV value (unit: %). Measurement conditions: Sample volume 30 mL: Laser He-Ne, 3.0 mW, 633 nm: Scattered light detection angle 90°: Cumulative times 200 times [Method for measuring the average secondary particle size of alumina abrasive grains] Poiz will be included 530 (manufactured by Kao Corporation, polycarboxylic acid polymer surfactant) 0.5% by mass aqueous solution as a dispersion medium, put it into the following measuring device, and then put the sample (alumina particles) so that the transmittance becomes 75-95% ), and then ultrasonic waves are applied for 5 minutes, and then the particle size is measured. Measuring machine: Laser diffraction/scattering type particle size distribution measuring device LA920 manufactured by Horiba Manufacturing Co., Ltd. Cycle strength: 4 Ultrasonic strength: 4 3. Polishing of the substrate using the polishing liquids prepared in Examples 1-15 and Comparative Examples 1-7 The composition is used to polish the substrate to be polished under the following polishing conditions. [Grinding conditions] Grinding machine: double-sided grinder (type 9B double-sided grinder, manufactured by SpeedFam) Substrate to be ground: Ni-P-plated aluminum alloy substrate, thickness: 1.27 mm, diameter 95 mm, number of pieces: 10 pieces for grinding Liquid: polishing liquid composition polishing pad: suede type (foamed layer: polyurethane elastomer), thickness: 1.0 mm, average pore size: 30 μm, surface layer compression rate: 2.5% (Filwel Company Manufacturing) Number of platen revolutions: 40 rpm Grinding load: 9.8 kPa (setting value) Slurry supply: 60 mL/min Grinding time: 5 minutes and 30 seconds for silica abrasive grains, 3 minutes and 30 seconds for alumina abrasive grains 4. Evaluation method [Evaluation of polishing rate] The polishing rate of the polishing liquid compositions of Examples 1 to 15 and Comparative Examples 1 to 7 was evaluated as follows. First, a balance (manufactured by Sartorius, "BP-210S") was used to measure the weight of each substrate before and after polishing, and the mass reduction was calculated based on the change in the mass of each substrate. Divide the average weight loss of all 10 pieces by the polishing time, and set the obtained value as the polishing speed, and calculate it by the following formula. Mass reduction (g) = {mass before grinding (g)-mass after grinding (g)} Grinding speed (mg/min) = mass reduction (mg) / grinding time (min) [Evaluation of long-wavelength ripple ] Under the following conditions, measurements were made on both sides of 10 pieces after polishing, and 20 sides in total. The average value of the measured values on the 20 faces was calculated as the long-wavelength ripple of the substrate. In this evaluation, regarding the long-wavelength ripple, from the viewpoint of increasing the recording density of the magnetic disk, it is preferably 3.0 Å or less, more preferably 2.7 Å or less, further preferably 2.4 Å or less, and still more preferably 2.1 Å the following. Measuring machine: "OptiFLAT III" manufactured by KLA Tencor Company Radius Inside/Out: 14.87 mm/47.83 mm Center X/Y (Center X/Y): 55.44 mm/53.38 mm Low Cutoff: 2.5 mm Inner Mask: 18.50 mm Outer Mask: 45.5 mm Long Period: 2.5 mm Wa Correction: 0.9 Rn Correction (Rn Correction): 1.0 Zernike Number of Items (No Zernike Terms): 8 [Method for evaluating aluminum oxide residue] Using a scanning electron microscope (manufactured by Hitachi, Ltd.: S-4000) to observe the surface of each substrate after polishing at 10,000 times, and perform the following 3-level evaluation . ○(A): No alumina residue is observed on the surface △(B): Alumina residue is slightly observed on the surface ×(C): Alumina residue is observed on the surface 5. Results The results of the evaluation are shown in Table 2. [Table 2] (Components of the polishing liquid compositions of Examples 1-15 and Comparative Examples 1-7) Abrasive particles: 6.0% by mass; pH adjuster: 0.5% by mass of sulfuric acid; oxidant: 0.5% by mass of hydrogen peroxide; the remainder: water; pH value: 1.4 As shown in Table 2, Comparative Examples 1 to 2 where the average short diameter of particle A is smaller than that of Particle B, Comparative Example 3 containing only particle B as abrasive grains, and Comparative Example 4 containing only particle A as abrasive grains 、Compared with Comparative Example 5 containing alumina particles as abrasive particles, and Comparative Examples 6-7 where the average short diameter of particle A is less than 105 nm, the particles A and B are included as abrasive particles, and the average short diameter of particle A is 105. Examples 1-15, which are more than nm and larger than particle B, do not significantly impair the polishing speed and reduce long-wavelength ripples after polishing. [Industrial Applicability] According to the present invention, it is possible to reduce long-wavelength ripples after polishing while maintaining the polishing speed, so that the productivity of manufacturing the magnetic disk substrate can be improved. The present invention can be preferably used in the manufacture of magnetic disk substrates.
