JP5151903B2 - Color filter substrate, manufacturing method thereof, and liquid crystal display device - Google Patents

Description

  The present invention relates to a color filter substrate, a manufacturing method thereof, and a liquid crystal display device having the color filter substrate.

  Conventionally, in a color filter substrate used in a liquid crystal display device, a black matrix made of a resin or a metal oxide film is used in a light shielding region other than an opening. For applications that do not require high display quality (some small size, some mobile phones, etc.), do not use a black matrix at all, or obtain a light shielding effect by overlapping two colors of adjacent color layer patterns. Yes. By not using a black matrix in this way, materials, processes, and costs can be reduced.

  Even in applications where high display quality is required, Patent Document 1 and Patent Document 3 disclose examples in which three color layers are superimposed as techniques for reducing materials, processes, and costs without sacrificing image quality. Has been. This configuration has an advantage that high light shielding performance, that is, high OD (Optical Density) value can be obtained.

  Patent Document 2 discloses an example in which a light shielding region is formed with a halftone mask. In this configuration, each color layer is thin, and there is an advantage that a step is small even when three colors are stacked.

  Patent Document 4 discloses an example in which two color layers are superimposed on a frame portion. In this configuration, there is an advantage that the stacking step of the color layer can be made lower than in the case of stacking three layers.

  In addition, Patent Document 2 discloses an example in which three colors are formed with one common mask.

  Further, in Patent Document 4, Non-Patent Document 1 or Patent Document 5, in the pattern within the effective display surface other than the frame portion, no grid-like black matrix pattern is arranged, one color layer pattern, or adjacent An example in which matching color layer patterns are overlapped so as to shield the width of the drain wiring (signal line) is disclosed. In this configuration, even when the above-described configuration is made by using only one mask, it is possible to avoid the problem that the OD value is insufficient by using a vertically aligned type normally black liquid crystal display device. There is.

  In Patent Document 6, R, G, and B pixels of a color filter are formed with four colors of R, Ye, Cy, and B, and a TFT (Thin Film Transistor) light-shielding region is overlaid with three color layers. In the other black matrix region, an example in which two color layers of red and blue are superimposed is shown. With this configuration, there is an advantage that the light shielding property between the TFT and the region near the TFT can be secured.

  21 and 22 are diagrams showing an example of a configuration according to Patent Document 3, FIG. 21 is a plan view showing a procedure for producing a color layer pattern, and FIG. 22 is a cross-sectional view taken along line HH ′ of FIG. FIG. 21 and FIG. 22 is basically a vertical stripe arrangement of red, green, and blue color layers, and the light-shielding region is overlapped with two colors of red and blue. Thereafter, if necessary, an overcoat layer is laminated, and a photo spacer is arranged for forming a cell gap of the panel. The cell gap of the panel is set to about 3.0 μm to 4.0 μm. This color filter substrate and the TFT substrate are subjected to an alignment treatment, and are bonded after dropping the liquid crystal, or liquid crystal is injected and sealed after the bonding, and then a polarizing plate is bonded to obtain a liquid crystal panel.

  At this time, as the TFT substrate, an in-plane switching (IPS) type substrate can be used. For example, in Patent Document 7 (Japanese Patent Laid-Open No. 2000-89240) and Patent Document 5 (Japanese Patent Laid-Open No. 2004-62145), a drain bus line and a gate bus line are connected by an upper common electrode through an interlayer insulating film. A horizontal electric field type liquid crystal display device having a covered structure is disclosed.

  FIG. 23 and FIG. 24 (FIGS. 1 and 2 described in Japanese Patent Application Laid-Open No. 2004-62145) are diagrams for explaining the characteristics of a conventional liquid crystal display device. According to the configuration of FIG. 23 of the conventional example, a plurality of gate wirings 41 and a plurality of common electrode wirings 42 are formed in the same layer and extending in the horizontal direction of the drawing in parallel with each other, On these structures, a plurality of drain wirings 43 extend in the vertical direction of the drawing via a gate insulating film (not shown). In the vicinity of each intersection of the gate wiring 41 and the drain wiring 43, a TFT 45 (FIG. 24) having a channel portion of an amorphous silicon layer is formed. The source electrode of the TFT 45 is connected to the comb-shaped pixel electrode 44. A portion of the pixel electrode 44 opposite to the source electrode is connected to a storage capacitor electrode that forms a capacitor with respect to the common electrode wiring 42 via a gate insulating film. A protective insulating film (not shown) is formed on the upper side of such a structure, and a common electrode 46 made of a transparent metal is further formed on the upper side. The common electrode 46 is formed so as to cover the drain wiring 43 and the gate wiring 41, and is connected to the lower common electrode wiring 42 through a contact hole provided so as to penetrate the protective insulating film and the gate insulating film. Yes.

  FIG. 25 (FIG. 21 described in Japanese Patent Application Laid-Open No. 2004-62145) is an enlarged view of the periphery of the gate wiring 41 of the liquid crystal display device of FIG. As shown in FIG. 25, the gate wiring 41 is covered with an upper common electrode 46. The common electrode 46 is disposed not only in the region immediately above the gate wiring 41 but also adjacent to the gate wiring 41, each of the common electrode wiring 42, the source electrode and the storage capacitor electrode, and the gate wiring 41. These gaps are formed so as to overlap with each other over the edge peripheral region of these electrodes.

  Further, as shown in FIG. 23, the black matrix layer 47 (region surrounded by the broken line in the figure) formed on the CF substrate side is formed only above the TFT 45 so as to cover the TFT 45. That is, the black matrix layer 47 is formed as a minimum size necessary for preventing light from entering the TFT 45. In addition, the black matrix layer 47 is not formed on the gate wiring 41 and the drain wiring 43 but is formed as an isolated pattern only on the TFT 45.

  23, 24, and 25, the electric field generated around the gate wiring 41 can be shielded by the upper common electrode 46, and the liquid crystal molecules in this region are initially aligned. The direction is not changed from the state, and no light leaks from the backlight. Therefore, it is not necessary to shield this portion on the color filter substrate side, and it is sufficient to form a black matrix layer 47 having a minimum size as shown in FIG.

Japanese Patent No. 2590858 JP-A-08-95021 JP 2003-14917 A JP 2000-29014 A JP 2004-62145 A JP 61-105583 A JP 2000-89240 A I. Washizuka, IDW'97 DIGEST, 227 (1997) ALC5-4

  However, among the conventional techniques as described above, the configuration disclosed in Patent Document 1 and Patent Document 3 in which three color layers are superimposed has the following problems.

  The color reproducibility of the liquid crystal display device varies depending on the application, but is about several tens to 60% in industrial applications that do not require 72% or more of the NTSC ratio in the sRGB and EBU standards, and some notebook PCs. For example, a combination of a color filter with a NTSC ratio of about 40% using a photosensitive resist by a general pigment dispersion method and a CCFL (Cold Cathode Fluorescent Lamp) backlight, each of the red, green and blue color layers The film thickness is about 1.0 μm. If an attempt is made to replace all of the black matrix pattern of the color filter substrate with a three-color overlapping light-shielding portion on the TFT, the drain wiring, and the gate wiring, that is, the film of the opening portion composed of one color. The level difference between the thickness and the film thickness of the light-shielding portion composed of three colors is 2.0 μm at the maximum in the vicinity of the frame portion. In the case of a color filter substrate for TN (Twisted Nematic), a transparent electrode (ITO: Indium Tin Oxide, etc.) is formed on the surface of this color layer, but the leveling effect of the step due to this can hardly be expected. Further, in the case of a color filter substrate for IPS or VA (Vertical Alignment), an overcoat layer is often provided thereon, but even in such a case, leveling cannot be completely performed. For example, when the overcoat film thickness is 1.0 μm, the step of 2.0 μm due to the lamination of the color layers is leveled only to about 60 to 70%, and as a result, the step of about 1.4 μm remains. Therefore, in the structure in which the entire black matrix pattern is overlaid with three colors, a large step is formed in a lattice shape on the entire surface, and the display quality is deteriorated due to liquid crystal injection failure or liquid crystal alignment failure due to rubbing failure.

  Further, the configuration disclosed in Patent Document 2 in which three color layers are stacked has the following problems.

  In the light-shielding pattern of the three-color overlapping portion by halftone, the thickness of each color layer corresponding to the light-shielding pattern becomes thin, so that the obtained OD value becomes small and the necessary light-shielding performance cannot be achieved.

  Further, as described in Patent Document 3, Patent Document 4, Non-Patent Document 1, and Patent Document 5, in the three primary color filters of red, green, and blue, adjacent color layer patterns of two adjacent colors are overlapped to provide a light shielding portion. The configuration to be formed has the following problems.

  The grid-like black matrix pattern is not arranged at all in the effective display surface other than the frame portion, or one color layer pattern or adjacent color layer pattern is shielded from the width of the drain wiring (signal line). In the case of a structure in which colors are overlapped, a necessary and sufficient light-shielding property cannot be ensured mainly for a TFT disposed in the vicinity of a gate wiring and a TFT vicinity region. That is, in the adjacent color layer pattern, the light shielding performance of the red and green color overlapping portions is low, and the color filter alone can sufficiently shield the light entering from the outside (external light) and the backlight light source. Will not be able to. On the other hand, in an example of forming a light-shielding portion by overlapping two colors using red and blue colors in the frame portion around the effective display area as described in Patent Document 4, each color layer pattern is shared. Therefore, it is impossible to reduce the cost by using a single mask for producing the color layer pattern.

  Also, as described in Patent Document 6, four colors R, Ye, Cy, and B are used, the TFT light-shielding region is overlaid with three color layers, and the other black matrix regions are two colors of red and blue. The configuration in which the color layers are stacked has the following problems.

  In order to construct three color pixels of R, G, and B in the color filter, it is necessary to use four colors of R, Ye, Cy, and B, and one step of the resin black matrix is omitted. One additional color layer forming step is required, and a cost reduction effect cannot be expected. Although there is a description that the B pixel is formed by one color of Cy, the y chromaticity value of Cy on the x, y chromaticity coordinates (CIE1931 color system) is much larger than the y chromaticity value of B, Approximately in the middle of the G and B coordinates. Therefore, it is difficult to express B with Cy.

  Moreover, in the pattern which piled up the color layer of 2 colors and 3 colors in the patent documents 1 to 4, 6 and the nonpatent literature 1, the side and angle | corner are an acute angle or generally a right angle, and the following subjects are the same. is there.

  When the corners or corners of a color layer pattern with two or more colors, especially three or more colors, are acute, the edges of the rubbing cloth may not evenly contact the entire pattern surface, combined with the effect of the large step. is there. If the rubbing tip of the rubbing cloth does not contact sufficiently, an area where the rubbing is not sufficiently performed is formed, which causes a display defect such as orientation failure due to insufficient rubbing.

  As described above, the main problem of the conventional example is that when three color layers are stacked in order to obtain a high OD value, a large step is formed on the surface of the color filter substrate. If the structure is adopted, the level difference is reduced, but the light shielding performance is lowered. The level difference and the light shielding property are in a trade-off relationship.

  The present invention has been made in view of the above problems, and its main purpose is to reduce the effects of steps while ensuring sufficient light shielding in a structure in which a light shielding portion is formed by overlapping color layers. Another object of the present invention is to provide a color filter substrate, a method for manufacturing the same, and a liquid crystal display device.

  In order to solve the conventional problems, the present invention has the following configuration.

  (1) In an active matrix liquid crystal display device comprising a color filter in which a light shielding layer is formed by laminating a color layer instead of a black matrix comprising a resin or metal layer, a channel of a thin film transistor (TFT) serving as a switching element is provided. In the second color overlap light-shielding portion that shields the TFT including the TFT and the vicinity of the TFT, three or more color overlap layers are provided, and each color layer forming the second color overlap light-shielding portion is a color in the display area of the pixel. The other light shielding portions (first color overlapping light shielding portions) are formed of fewer color overlapping layers than the color overlapping layers of the second color overlapping light shielding portions.

  As a result, the three-color overlap with a large step is only the TFT and a part near the TFT, and the most part of the color filter surface area is the two-color overlap. Therefore, the difference in film thickness between the opening for displaying and the two-color overlapping light-shielding portion can be suppressed, and a large step does not occur in this portion. Therefore, when the liquid crystal is sealed in the panel by injecting or dropping method, the liquid crystal spreads uniformly, so that the amount of liquid crystal in the surface becomes uniform and there is no cell gap defect or liquid crystal injection defect. In addition, since the color layer forming the light-shielding region is formed as a larger subpixel pattern and a continuous pattern, it is resistant to peeling and the yield can be improved. Furthermore, since the number of irregularities due to the step is reduced, the display defect of the alignment abnormality due to insufficient rubbing is reduced.

  (2) In the above (1), each color layer has a stripe shape and is continuous between pixels. In order to shield the TFT, the color layer is continuous from the color layer to the region of the color layer adjacent to both sides from the stripe shape. Further, it has a shape protruding with a convex pattern.

  As described above, the color layer is formed in a stripe shape, and in the TFT and the light shielding portion in the vicinity of the TFT, the region of the color layer adjacent to both sides from the stripe is projected with a convex pattern, so that it can be efficiently drawn out to the three-color overlapping portion. Therefore, without reducing the aperture ratio, only the TFT light-shielding portion can be overlapped with three colors, and the other regions can be overlapped with two colors.

  (3) In the above (1) or (2), one or more of the three or more color layers are formed in substantially the same shape on the display portion except the peripheral frame of the liquid crystal display device. Features.

  By doing in this way, the exposure mask of a color layer can be shared in several color layers, the number of masks can be reduced, and the cost concerning manufacture can be reduced.

  (4) Further, in (3), more preferably, all the color layers are formed in the same shape.

  As a more preferable case, since all the color layers have the same shape, the exposure mask of the color layer can be shared by one exposure mask, so that the manufacturing cost can be further reduced.

  (5) In the above (2), the convex shape is bent at the base so that the side of the pattern forms 90 ° or more.

  In order to form the TFT light-shielding layer from the stripe-shaped color layer, it is desirable that the base of the protruding pattern to be projected is 90 ° or more. It has been found that when this portion has an acute angle, adhesion of shavings or the like of the alignment film is likely to occur during rubbing of this portion, and this portion is liable to cause an abnormal alignment. Such a problem can be avoided by bending the edge of the color layer at 90 ° or more at the portion.

  (6) In the above (1), there is always an intermediate region of at least one color overlap layer between the portion where there is a stack of three or more colors and the color layer in the pixel display region. And

  When three or more color overlapping portions and a one-color layer portion are adjacent to each other, a step at the boundary becomes large, and an orientation abnormality is likely to occur in the vicinity thereof. This problem can be avoided by adopting a structure in which a color overlap layer region having a layer of three or more colors always has one less color overlap region between the color layer in the display region of the pixel.

  (7) A TFT including a channel of a thin film transistor (TFT) and a light shielding region portion on the color filter substrate side that shields the vicinity of the TFT; By disposing a third color overlapped light-shielding portion in which two or more color layers are overlapped with at least one layer less than the color overlap layer of the overlapped light-shielding portion, a three-color overlapping region having a larger step than (1) Can be reduced. As a result, the three-color superposition with a large level difference is only a part of the specific pixel near the TFT and the TFT, and the most part of the color filter surface area is the two-color superposition. Therefore, the difference in film thickness between the opening for displaying and the two-color overlapping light-shielding portion can be suppressed, and a large step does not occur in this portion. Therefore, when the liquid crystal is sealed in the panel by injecting or dropping method, the liquid crystal spreads uniformly, so that the amount of liquid crystal in the surface becomes uniform and there is no cell gap defect or liquid crystal injection defect. Further, since the color layer pattern that does not form the third light shielding region is formed as a large pattern that forms the display region of the color filter, it is a pattern that is relatively smaller than the pattern that forms the display region of the color filter. Since there is no pattern of the light-shielding region 3, the possibility of pattern chipping or peeling due to water flow during cleaning or development is further reduced. Therefore, the yield can be improved. In addition, since the number of irregularities due to steps is reduced, display defects due to alignment anomalies caused by insufficient rubbing or scraping from the alignment film when rubbing adheres to the stepped portion are reduced, and display uniformity Will improve. Further, when liquid crystal alignment is disturbed due to scraps scraped off from the alignment film during rubbing and adhering to the steps, unnecessary light leakage occurs in all black pixels that are not displayed. This light leakage causes a decrease in display contrast. By reducing the number of irregularities due to steps as in the present invention, high alignment can be maintained by preventing liquid crystal alignment disturbance and preventing light leakage during all black display.

  (8) In the color pattern that forms the third color overlap light shielding portion, at least from the second color projection light shielding portion, the second color projection portion projects to the side where the thin film transistor is disposed and to the opposite side. Since the number of the first overhang portions of the first overhang portion is smaller, the frequency of occurrence of problems such as peeling is reduced, and the yield can be improved. Further, since the number of irregularities due to the step is reduced, the display defect of the alignment abnormality due to insufficient rubbing is reduced, and the liquid crystal is easily spread evenly when the liquid crystal is sealed.

  (9) Since the adhesion force between the color layer and the glass substrate is inferior to the adhesion force between the color layers of the same material, in the color layer pattern formed in the first layer on the glass substrate, Since the first overhanging portion does not exist or the first overhanging portion is degenerated to the extent that it does not cover the thin film transistors in the vicinity, the frequency of occurrence of defects such as peeling can be further reduced and the yield can be improved. .

  (10) Since the adhesion between the color layer and the glass substrate is inferior to the adhesion between the color layers of the same material, the color layer pattern formed in the first layer on the glass substrate The presence of neither the first projecting portion projecting to the side where the thin film transistor is disposed in the vicinity of the layer pattern nor the second projecting portion projecting to the opposite side further reduces the frequency of occurrence of defects such as peeling, Yield can be improved.

  (11) The color layer pattern formed in the first layer on the glass substrate is a green color layer, so that the thin film transistor and the third color overlapping light-shielding portion facing the vicinity of the thin film transistor have a layer other than the green layer. The color layered stacked structure is formed. For example, a stacked structure of Red and Blue can be formed. As a result, a red layer for avoiding deterioration of characteristics such as light leakage due to incidence of external light on the TFT and a red and blue laminated structure that provides sufficient light shielding performance (OD value) are obtained. While maintaining the above, it is possible to obtain a necessary and sufficient display quality as a liquid crystal display device.

  According to the color filter substrate, the manufacturing method thereof, and the liquid crystal display device of the present invention, it is possible to alleviate the influence of the step while ensuring sufficient light shielding properties. This will be specifically described below.

  (1) A TFT including a channel portion of a thin film transistor (TFT) serving as a switching element and a light shielding region in the vicinity of the TFT in a structure in which a light shielding portion is formed by laminating a color layer instead of a black matrix made of a resin or metal layer Is formed with a color overlap layer (second color overlap light-shielding portion in the claims) in which three or more color layers are stacked, and each color layer of the color overlap layer is continuous from the color layer in the display area of the pixel. In this way, in the other light shielding regions, a color overlapping layer (the first color overlapping light shielding portion in the claims) is formed by one or more colors less than the color overlapping layer.

  As a result, the second color overlap light-shielding portion having a thick film thickness is only a part of the TFT and the vicinity of the TFT, and the most part of the color filter surface area is the first color overlap light-shielding portion having a thickness smaller than that of the second color overlap light-shielding portion. Part. Therefore, the difference in film thickness between the opening and the second color overlap light-shielding portion is suppressed, and a large step does not occur in this portion. Therefore, when the liquid crystal is sealed in the panel by injection or dropping method, the liquid crystal is uniformly distributed. Spreading and cell gap defects and liquid crystal injection defects can be suppressed.

  In addition, since the color layer forming the TFT light-shielding region is formed as a pattern continuous with the sub-pixel pattern, it is strong against peeling and the yield can be improved. Furthermore, as shown in FIG. 34, FIG. 35 (RR ′ cross section of FIG. 34), and FIG. 36 (SS ′ cross section of FIG. 34), the number of irregularities due to the step is reduced by half, so the tip of the rubbing cloth In the TFT light-shielding pattern and the sub-pixel pattern, only one step up and down is required, and alignment abnormality due to insufficient rubbing is reduced. Further, the level difference portion where the alignment film waste adheres by the rubbing cloth is halved, and the display defect of the foreign matter is reduced. As a result, the rubbing quality is significantly improved as compared with the conventional example, and the panel yield is improved.

  (2) Overhanging portions that extend continuously from the color layer are formed in regions of the color layer adjacent to both sides of the stripe shape from the stripe shape color layer.

  As a result, the color layer can be efficiently drawn out to the TFT light-shielding region, so that only the TFT light-shielding region can be used as a second color overlapping light-shielding portion in which three or more color layers are laminated without reducing the aperture ratio. The portion can be the first color overlapping light shielding portion having a smaller number of color layers.

  Further, in FIG. 5, the projecting shape on both sides is asymmetrical, and the TFT light shielding region side is reduced. Thus, when the angle between the rubbing approach direction and the pixel stripe direction is χ, the step region of the TFT light shielding region protruding to the right side in FIG. 5 is more than the step region of the gate wiring light shielding region of the pattern protruding to the left side. However, the contact area when rubbing is reduced. In this way, by reducing the contact area of the rubbing entry start portion, the rubbing treatment of the alignment film can be performed more smoothly even at the stepped portion, so that the rubbing quality is improved.

  (3) Of the three or more color layers, one or more fewer color layers are formed in substantially the same shape in the display area except the peripheral frame of the liquid crystal display device, and more preferably, all the color layers have the same shape. Is formed.

  By doing in this way, the exposure mask of a color layer can be shared in several color layers, the number of masks can be reduced, and the cost concerning manufacture can be reduced. Moreover, since all the color layers have the same shape, the exposure mask of the color layer can be shared by a single exposure mask, so that the manufacturing costs can be further reduced.

  (4) The overhanging portion is bent at the base so that the angle with the side of the color stripe pattern is 90 ° or more.

  When the angle formed between the protruding portion and the side of the color stripe pattern becomes an acute angle, adhesion of the alignment film, such as shavings, is likely to occur during rubbing. By doing so, such a problem can be avoided.

  (5) There is always a first color overlap light-shielding portion that is at least one layer fewer than the second color overlap light-shielding portion between the second color overlap light-shielding portion of three or more colors and the color layer at the opening of the pixel. Existing.

  If the second color overlapping light-shielding portion of three or more colors and the color layer portion of one color are adjacent to each other, a step at the boundary becomes large, and an orientation abnormality is likely to occur in the vicinity. This problem can be avoided by interposing one color overlapping light shielding portion.

  Further, since the step has a forward taper shape as shown in FIG. 2, the liquid crystal easily gets over the step and the wettability of the liquid crystal (ease of spreading of the liquid crystal) is improved. Therefore, cell gap defects and liquid crystal injection defects can be suppressed.

  As shown in the background art, as a structure for shielding the light shielding regions such as drain wiring, gate wiring, TFT, and the vicinity of the TFT, a structure in which the color layer is overlapped with two colors or three colors is used instead of the black matrix. It has been.

  However, in the two-color overlapping structure, when strong light is incident from the counter substrate side, the light transmitted through the two-color overlapping light-shielding portion is incident on the TFT, and so-called leakage current is large when the TFT is turned off. Therefore, a good display cannot be obtained.

  On the other hand, if all the light shielding regions are overlapped with three colors, the difference in film thickness between the opening of each pixel and the light shielding region becomes very large, and a large step is formed around each pixel. Such a step prevents the liquid crystal from spreading uniformly when the liquid crystal is sealed in the panel. As a result, the amount of liquid crystal in the surface is non-uniform, the cell gap is non-uniform, the liquid crystal does not enter sufficiently, poor injection occurs, the liquid crystal alignment becomes abnormal near the step, etc. Problem arises.

  Therefore, in order to stably obtain good display characteristics, the TFT and the vicinity of the TFT are more reliably shielded by overlaying three or more color layers, and the other areas are shielded by overlaying lesser color layers. The structure is preferred.

  As such a structure, Patent Document 6 has the following configuration. An R colored layer is selectively formed on the R picture element portion (sub-pixel portion), the TFT light shielding region, and the black stripe portion. Next, a Cy colored layer is selectively formed in the G picture element portion and the B picture element portion, and a Ye colored layer is selectively formed in the G picture element portion and the TFT light shielding region. Finally, a B colored layer is selectively formed on the B picture element portion, the TFT light shielding region, and the black stripe portion. As a result, the black stripe portion has a two-layer structure in which the colored layers of R and B overlap, and the portion facing the TFT has a three-layer structure in which R, Ye, and B overlap. Thus, an example is disclosed in which three color layers are superimposed on the TFT light-shielding region and two colors are superimposed on the other light-shielding regions.

  However, in this example, when a three-color overlapping pattern is arranged to shield the TFT and the vicinity of the TFT, the R, Ye, and B pixel element patterns are separated from the three-color overlapping TFT light-shielding pattern. The shading pattern is isolated. The TFT is usually about 10 to 20 [mu] m in size, and the pixel part (subpixel) pattern is usually about 100 [mu] m or more and is often connected in the color filter plane like a stripe pattern. Therefore, such an isolated pattern of several tens of μm is often peeled off or chipped during cleaning and development in the color filter manufacturing process, compared to a connected stripe pattern, The defective color layer may cause a foreign matter defect due to reattachment to the color filter substrate, resulting in a decrease in yield.

  As shown in FIG. 34, when the TFT light-shielding pattern is isolated from each sub-pixel portion pattern, the number of locations that are likely to cause an orientation abnormality due to insufficient rubbing is twice as large as when the TFT light-shielding pattern is continuous. In the case of being isolated, the number of unevenness due to the step is doubled, so when the rubbing process is performed, the hair tip of the cloth once rides on the step of the isolated pattern, and then goes down the isolated pattern, and then Go down after stepping on the sub-pixel pattern. Therefore, the tip of the rubbing cloth goes up and down two steps in the TFT light shielding pattern and the sub-pixel pattern. A display defect region due to an orientation abnormality is likely to occur at a place where the step is climbed up or down. Further, since the alignment film scraps that fall off from the rubbing cloth adhere to the stepped portion, the display of foreign matter due to the alignment film waste increases as the number of the stepped portions increases.

  Furthermore, since the color layer pattern in the color filter plane differs for each color layer, and a mask for color filter exposure is required for each color, the initial cost is correspondingly increased.

  Further, even when there are many steps, the liquid crystal is prevented from spreading uniformly when the liquid crystal is sealed in the panel, as described above.

  Therefore, the present invention proposes a liquid crystal display device having the following structure.

  First, in an active matrix liquid crystal display device comprising a color filter in which a light shielding portion is formed by laminating a color layer instead of a black matrix comprising a resin or metal layer, a channel of a thin film transistor (TFT) serving as a switching element In the light shielding region including the TFT and the light shielding region in the vicinity of the TFT, a stacked color superposition layer (second color superposition light shielding portion) of three or more colors is formed, and each color layer of the color superposition layer is an opening of a pixel In the other light shielding regions, one or more color overlapping layers (the first color overlapping light shielding portion in the claims) are formed in the other light shielding regions.

  Second, in the first, each color layer has a stripe shape and is continuous between pixels, and in order to shield the TFT, the color layer is continuous from the color layer to the region of the color layer adjacent to both sides from the stripe shape. An overhanging portion protruding in a convex pattern is provided.

  Thirdly, in the first or second, one or more color layers out of three or more color layers are formed in substantially the same shape in the display area except for the peripheral frame of the liquid crystal display device. More preferably, all the color layers are formed in the same shape.

  Fourth, in the second, the protruding portion of the convex pattern is bent at the base so that the side of the pattern forms 90 ° or more.

  Fifthly, in the first, a color overlap layer of one or fewer layers is interposed in most regions between the color overlap layer of three or more colors and the color layer in the opening of the pixel.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the red (red) color layer is abbreviated as R layer, the green (green) color layer as G layer, and the blue (blue) color layer as B layer. Further, as necessary, the black matrix is abbreviated as BM, and the color filter is abbreviated as CF.

  As a first embodiment of the present invention, FIG. 1 shows a resin BM-less low step CF that can be manufactured with one color pattern common mask. As shown in FIG. 1, a grid-like black matrix pattern is formed by overlapping two adjacent colors of red (red), green (green), and blue (blue) (first color overlapping light shielding portion in the claims), Further, a TFT that requires light shielding performance, specifically, a TFT that requires a large OD value, and only the vicinity of the TFT are formed by overlapping three colors (second color overlapping light shielding portion in claims).

  FIG. 2 is a cross-sectional view taken along the line A-A ′ of FIG. 1. As shown in FIG. 2, a B layer 22c that shields only the TFT and the vicinity of the TFT α is disposed on the two-color overlap of the R layer 22a and the G layer 22b that shield the gate wiring width β.

  Here, the structure near the TFT is defined in FIG. In FIG. 33, only the pixel electrode 15, the drain wiring (signal line) 14, and the source / drain electrodes are shown for ease of explanation. The TFT vicinity region is defined by an outer boundary line at a position M = 2 μm and N = 2 μm away from the TFT channel part (area in the broken line part), and an outer peripheral boundary line at a position M = 14 μm and N = 14 μm away from the TFT channel part. It sets suitably as an area | region (area | region in a dashed-dotted line part) between. The distance between M and N takes into account the pattern displacement accuracy in the color filter manufacturing process, the overlay position accuracy of the TFT substrate and the color filter substrate, the incident angle of external light from the outside of the liquid crystal panel entering from the color filter side, and the like. Can be decided.

  3 and 4 are detailed diagrams (part of the color layer pattern) of the TFT and the light shielding pattern in the vicinity of the TFT. FIG. 3 shows a state in which the R layer 22a, the G layer 22b, and the B layer 22c are overlapped, and FIG. 4 shows only the G layer 22b. As shown in FIGS. 3 and 4, the color layer pattern of the present embodiment is a left-side protruding pattern (region (b) that shields the gate wiring portion from the color stripe pattern. ) And an overhanging pattern (region (a): first overhanging portion in the claims) to the right, which shields the vicinity of the TFT element. Here, when a small island-shaped color layer pattern of, for example, about 20 μm or less and about 10 μm is formed isolated from a large pattern of about 20 μm or more and about 100 μm, peeling or chipping is likely to occur in the cleaning or development process. By forming the projecting shape from the stripe without forming the island shape, it can be reliably formed without peeling or chipping at the portion in the washing or developing process.

  The patterns of FIGS. 3 and 4 are repeatedly arranged in the A-A ′ direction of FIG. 1 to form one color layer pattern. When this color layer pattern is the R layer 22a, the G layer 22b is arranged at a position where the same pattern is shifted by one color pixel, and the B layer 22c is further arranged at a position where the same pattern is shifted by one color pixel. The overlapping width of each stripe portion is set such that the drain wiring (signal line) 14 of the TFT substrate can be shielded from light and color mixing from adjacent color pixels is prevented. Further, the columnar spacers 31 are arranged in the two-color overlapping portion where the step is lowered. FIG. 30 is a cross-sectional view (K-K ′ cross-section of FIG. 29) when the CF substrate on which the color layer pattern is formed and the TFT substrate are overlapped.

  FIGS. 31 and 32 show layout diagrams of light shielding patterns in the vicinity of the TFT and the TFT when the TFT substrate and the CF substrate are overlapped. 31 and 32, for ease of explanation, only the positions of the pixel electrode 15, the common electrode wiring 13, the gate wiring 12, the drain wiring 14, the three-color overlapping light shielding pattern, and the two-color overlapping light shielding pattern are shown. The other parts are omitted.

  In FIG. 31, when the size of the TFT channel portion (the region in the broken line portion in the figure) is W × L, the three-color overlapping light-shielding pattern has overhang amounts M and N extending from the channel portion so as to cover the channel portion. It becomes the size which becomes. The values of M and N are calculated in consideration of the cell gap of the liquid crystal panel, the thickness of the color layer, and the like so that no external light is incident or the amount of external light incident is minimized. This is determined by adding the value of the overlay accuracy of the substrate and the CF substrate.

  In FIG. 32, when the width of the two-color overlapping light-shielding pattern is β, the width of the gate wiring 14 is P, and the amount of protrusion of the two-color overlapping light-shielding pattern from the gate wiring 14 is Q, the value of Q is the gate wiring of the metal material. In order to prevent external light from being reflected on 12 and display quality from being deteriorated, the value is set to a value larger than the overlay accuracy value of the TFT substrate and the CF substrate.

  Although these values in FIGS. 31 and 32 differ depending on the liquid crystal panel, in Example 1, L = 6.0 μm, W = 12.0 μm, M = 6.0 μm, N = 6.0 μm, P = 14.0 μm, Q = 11.0 μm. At this time, the two-color overlapping light-shielding pattern width β was 36.0 μm.

  Next, the manufacturing method of a color filter is shown. Note that the color filter can be produced by any method such as a printing method, a photoresist method, and an etching method, but a photoresist method is preferable in consideration of controllability and reproducibility of high definition and spectral characteristics. . In the photoresist method, a colored composition in which a pigment is dispersed in an appropriate solvent together with a photoinitiator and a polymerization monomer in a transparent resin is coated on a transparent substrate, and then a color filter is subjected to pattern exposure and development. In this method, the process of forming a color filter of one color is repeated for each color to produce a color filter.

  First, a colored composition of the R layer is first applied onto a glass substrate using a spin coater, dried under reduced pressure, pre-baked, exposed using a photomask, developed, washed with water, and post-baked to obtain R. A layer pattern is produced. Subsequently, a B layer pattern and finally a G layer pattern are similarly produced. The order of the R layer and the B layer may be reversed. At this time, as described above, the patterns of FIGS. 3 and 4 are repeatedly arranged in the A-A ′ direction of FIG. 1 to form a pattern of one color layer. Since this color layer pattern is formed at a position shifted by one color pixel as a common pattern for the R layer, G layer, and B layer, the exposure masks for the R, G, and B layers are the same pattern. That is, each color layer was patterned using a common exposure mask.

  This method is the case of an optimum manufacturing method that minimizes the cost related to the mask, but this method is mainly used when a light shielding pattern on the peripheral frame portion is unnecessary. When a pattern outside the display area, that is, a light-shielding pattern in the peripheral frame portion is required, a common mask may be used for at least two color layer patterns among the three color layer patterns. More specifically, by patterning the R layer and the B layer using a mask of a color layer pattern including the light shielding pattern of the peripheral frame, the two-color overlapping light shielding pattern in the display region and the peripheral frame 2 A color overlap shading pattern is formed. Finally, the G layer is patterned using a mask having only a display area pattern without a light shielding pattern in the peripheral frame portion. Thereby, a color filter having a two-color overlapping light-shielding pattern in the peripheral frame portion and having a three-color overlapping light-shielding pattern only in the vicinity of the TFT and the TFT can be manufactured.

  By the way, the G layer is patterned using the color layer pattern mask including the display area pattern and the light shielding pattern of the peripheral frame portion, and the mask of only the display area pattern without the light shielding pattern of the peripheral frame portion is used. It is also possible to pattern the layer and the B layer to form a TFT and a three-color overlapping light-shielding pattern in the vicinity of the TFT, a two-color overlapping light-shielding pattern in the display area, and a one-color light shielding pattern in the peripheral frame portion. However, the light shielding pattern in the peripheral frame portion is one layer, and the light shielding performance is inferior to the case of two layers.

  As described above, in the manufacturing method in which the exposure mask of the color layer is made common, a layer having one or more colors out of the three or more color layers is used by using the color layer pattern mask including the light shielding pattern of the peripheral frame portion. By patterning, a color overlap shading pattern in the display area and a color overlap shading pattern in the peripheral frame portion are formed, and then a mask of only the display area pattern having no shading pattern in the peripheral frame portion is used. Perform patterning of the color layer above the color. This order may be reversed.

  At this time, the film thickness of each color layer of R, G, B of a color filter having a NTSC ratio of about 40% using a photosensitive resist by a general pigment dispersion method was about 1.0 μm.

  Next, the surface of the color filter substrate is polished as necessary, and unnecessary protrusions are selectively scraped off. Furthermore, a photosensitive or thermosetting transparent resin coating solution was applied to the entire surface using a spin coater (in the case of photosensitivity, additional exposure and development steps were performed) and cured in an oven to form an overcoat layer. . The film thickness of the obtained overcoat layer was about 1.0 μm. The step near the three-color overlapping light-shielding pattern was leveled to a step of 0.8 μm because the pattern was sometimes small.

  Further, a photosensitive resin was applied thereon with a spin coater, dried under reduced pressure, pre-baked, exposed using a photomask, developed, washed with water, and post-baked to form a photo spacer (columnar spacer).

  In this configuration, a spacer that supports the liquid crystal gap outside the opening but does not enter the opening is used. More preferably, a photo-resin photo spacer is used. This photo spacer may be arranged in the vicinity of the R color pixel or in the vicinity of the G color or B color pixel as necessary, but is preferably arranged on the two-color overlapping light shielding portion corresponding to the gate wiring light shielding region. .

  A liquid crystal layer gap is formed by the photo spacer and the color layer step. The cell gap of the panel was set to about 3.0 μm to 4.0 μm.

  On the other hand, the TFT substrate is a TFT substrate having a thin film transistor type lateral electric field type active element, and is formed by overlapping a plurality of color layers of the color filter substrate in a region directly above the channel portion of the thin film transistor. The pattern structure is arranged. In the TFT substrate, a common electrode overlaps at least a part of a region on the gate bus line, and the common electrode has a window-like hole in a region directly above the channel portion of the thin film transistor. And the edge part of the said common electrode by the said window-shaped hole has a structure which exists inside the edge of the opaque electrode group which comprises the said thin-film transistor.

  Next, in order to manufacture a panel of a liquid crystal display device, an alignment film is applied on the color filter substrate and the TFT substrate, and a rubbing process is performed.

  Next, after applying a sealing material to one of the substrates, the TFT substrate and the color filter substrate are bonded together, and liquid crystal is injected into the substrate to be sealed. When the liquid crystal is dropped, the liquid crystal is dropped after applying the sealing material, and the TFT substrate and the color filter substrate are bonded together.

  Next, a polarizing plate was attached to both outer sides of the color filter substrate and the TFT substrate, and wiring of a backlight light source module, a substrate for supplying signals and an external power source, and the like were performed, thereby manufacturing a liquid crystal display device. In this embodiment, as the TFT substrate, the drain bus line and the gate bus line described in JP-A-2000-89240 and JP-A-2004-62145 are covered with an upper common electrode through an interlayer insulating film. A TFT substrate of the same type as that used in the horizontal electric field type liquid crystal display device having the configuration was used. The liquid crystal display device of the present invention has a normally black mode panel configuration, but may have other panel configurations. As an example, configurations of liquid crystal panels such as VA mode, IPS mode, and FFS (Fringe Field Switching) mode are conceivable.

  The above manufacturing method is an example, and there is no limitation in the order of producing each of the R, G, and B color layers. In the examples, film formation is performed in the general order of R → G → B. When a color resist is used, B → R → G or R → B → G is more preferable. The reason for this is that when the second and third colors are stacked, the film thickness of the layer to be stacked later is subject to leveling due to a step with the pixel opening, and the film thickness tends to be thin. As an example, although different in color resist characteristics such as viscosity, when the color layer film thickness of the opening is set to 1.0 μm for all of R, G, and B, the first layer is 1. The film thickness may be as thin as 0 μm, the second layer 0.8 μm, and the third layer 0.7 μm. As the film thickness decreases, the transmittance increases and the OD value of the light-shielding pattern due to color overlap decreases. In the color overlap light shielding pattern, R and B are important for increasing the OD value. Therefore, by disposing the R and B layers as low as possible in the first layer and the second layer, a high OD value can be maintained without significantly reducing the film thickness.

  Note that the optical density (OD value) indicating the light shielding performance of the red and blue color overlapping light shielding patterns is relatively low compared to the conventional light shielding patterns of resin carbon black or metal oxide black matrix. For example, resin carbon black has an OD value of 3.8 to 4.0 at 1.3 μm and a color specification designed for 72% of NTSC ratio, and an OD value of 3.0 to 3.8 μm in a red and blue color overlapping light-shielding portion. 3.5. The color specification with NTSC ratio of 40% is even lower, about 2.0 to 3.0.

  However, in a normally black mode panel such as IPS, there is an electric field shield structure on the drain wiring and gate wiring on the TFT substrate side, and the liquid crystal is not driven in the electric field shield pattern area. The transmitted light can be blocked. Further, metal wiring portions other than the opening can also contribute to light shielding. In addition, since the reflected light on the wiring electrode due to external light passes through the light shielding pattern twice, the light intensity is sufficiently attenuated. However, in order to suppress TFT light leakage as described in Patent Document 1, it is necessary to dispose at least a color layer capable of cutting a wavelength having a large influence on leakage in the TFT and the color overlap light shielding portion in the vicinity of the TFT. In this embodiment, a red layer is used.

  As described above, it is possible to maintain a sufficient light-shielding property for display even in applications such as when extremely high backlight luminance is required or when extremely strong external light is incident. . Therefore, even if the light shielding portion on the CF substrate side corresponding to the region is configured with two colors of adjacent color patterns, a certain level of display quality can be obtained.

  Furthermore, since the TFT and the metal wiring arrangement in the vicinity of the TFT are arrangements that cannot block all the light from the backlight, and in order to block outside light incident on the TFT, they are more shielded as in the present invention. By disposing a highly reliable three-color overlapping light shielding portion in the vicinity of the TFT and the TFT, a sufficient light shielding characteristic in the vicinity of the TFT and the TFT can be obtained, and a liquid crystal display device having better display quality characteristics can be obtained.

  At this time, the step difference is increased by superimposing the three colors, but any one layer of the three colors has a pattern of only the TFT light-shielding region smaller than the wiring width, that is, these widths are represented by β (first number) as shown in FIG. By adopting a two-stage structure in which the width of the two-color layer> α (the width of the third color layer), the sudden step change in the three-color overlapping light-shielding portion is alleviated, and the area near the top of the step is also the color filter surface As the ratio of the amount to the surface becomes small, the influence on the rubbing process is small.

  Further, in an environment-use liquid crystal display device in which external light incidence is not so much, the area of the stepped portion can be further reduced by forming a pattern that shields the channel portion of the minimum necessary TFT.

  In addition, by overlapping only the minimum necessary area with three colors, the liquid crystal can be sealed more uniformly because there are few areas with large steps that cause resistance when the liquid crystal is sealed in the liquid crystal injection and dropping process. Thus, a liquid crystal display device with better display quality can be realized.

  Furthermore, in the color layer pattern of the present invention, only the minimum necessary TFT light-shielding region is a three-color overlapping light-shielding portion. Therefore, compared with Patent Document 1, two-color overlapping portions with lower steps, for example, two colors in the gate wiring direction A region (FIG. 3) where the photo spacer is arranged can be secured in the overlapping light shielding portion. As a result, the degree of freedom in adjusting the liquid crystal gap by the photo spacer is increased and it is possible to cope with a narrower liquid crystal gap.

  For example, when the thickness of the color layer is 1.0 μm for the R layer, 1.0 μm for the G layer, 1.0 μm for the B layer, and 1.0 μm for the overcoat layer, the step from the opening of the three-color overlapping portion is 0.8 μm. The step from the opening of the two-color overlapping portion is 0.4 μm. Assuming that the liquid crystal cell gap is 3.0 μm, which is a narrow gap, when a photo spacer is arranged in the two-color overlapping portion, the thickness (height) of the photo spacer material can be secured in the liquid crystal cell state (three color overlapping). When a photo spacer is arranged in the region, only 2.2 μm can be secured). As the photo spacer height increases, the amount of elastic deformation of the photo spacer can be designed to be large, so that the deformation margin corresponding to local pressure stress from the outside of the panel to the display surface is widened, and the local Gaps are reduced. Accordingly, even when the liquid crystal gap is designed, the adjustment range in the photo spacer height can be increased, so that the degree of design freedom can be increased.

  5 and 6 show the TFTs of the color filter used in Example 2 and the light shielding pattern in the vicinity of the TFTs. The shape in the area | region (a) of FIG. 4 of Example 1 is changed. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the first embodiment.

  By making the shape like the region (a) of FIGS. 5 and 6, the possibility that the rubbing cloth does not hit the region that becomes the shadow of the step of the three color overlap is reduced, and the liquid crystal alignment is reduced. Display defects due to abnormalities can be avoided. FIG. 7 shows angles formed by the sides of the pattern, G1θ to G4θ, and G1ω to G6ω.

The range of angles from G1θ to G4θ is
90 degrees ≦ G1θ to G4θ ≦ 180 degrees,
A pattern in which a rectangular protruding portion that shields the TFT and the side surface of the color stripe are connected in an oblique tapered shape (forward tapered shape) (that is, a pattern having a forward tapered inclined portion at the base of the protruding portion) It has become.

As for G1ω to G6ω,
90 degrees <G1ω to G6ω ≦ 180 degrees,
However, since the opening shape and the opening ratio are affected by this angle, G1ω to G6ω are preferably set to 90 degrees. If a rubbing failure occurs in the vicinity of 90 degrees, the opening ratio may be sacrificed, and this portion may have a forward tapered shape. In FIG. 7, the G layer pattern is described, but the R layer pattern and the B layer pattern are also set to the same angle.

In addition, when the angle formed between the side of the oblique taper and the CF side rubbing direction of the pattern in which the rectangular overhanging portion that shields the TFT and the side surface of the color stripe are connected in an oblique taper shape is χ, the rubbing cloth So that the tip of the hair can be rubbed sufficiently
45 degrees ≤ χ ≤ 135 degrees,
And

  However, χ = 90 degrees is preferable for optimal rubbing. At this time, the alignment direction of the liquid crystal is formed in a direction parallel to the rubbing direction.

  FIG. 8 shows a TFT of the color filter used in Example 3 and a light shielding pattern in the vicinity of the TFT. The shape in the region (b) of FIG. 6 in Example 2 is changed. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the second embodiment.

  In FIG. 8, by setting the region (b) to the same shape as the region (a), there is a possibility that the rubbing cloth does not hit the region that is the shadow of the three-color overlap step and the rubbing is insufficient. 2 is reduced. FIG. 8 shows angles formed by the sides of the pattern, G1θ to G8θ, and G3ω to G6ω.

The range of angles from G1θ to G8θ is
90 degrees ≦ G1θ to G8θ ≦ 180 degrees,
A pattern in which a rectangular protruding portion that shields the TFT and the side surface of the color stripe, and a rectangular protruding portion that shields the vicinity of the gate wiring and the side surface of the color stripe are connected to each other in an inclined taper shape (that is, The pattern includes a forward tapered inclined portion at the base of the overhang portion).

  However, since the aperture shape and the aperture ratio are affected by the angles G3ω to G6ω, both are preferably set to 90 degrees. If a rubbing failure occurs in the vicinity of 90 degrees, the opening ratio may be sacrificed and this portion may be tapered. Although the G layer pattern is described in FIG. 8, the same angle is set for the R layer pattern and the B layer pattern.

  9 and 10 show the TFTs of the color filter used in Example 4 and the light shielding pattern in the vicinity of the TFTs.

  A three-color overlapping light-shielding pattern for shielding external light incident on the TFT is formed in each rectangular shape of the TFT, the light-shielding pattern near the TFT, and the light-shielding pattern near the gate line so as to cover the minimum TFT channel area. By arranging the top portions in an overlapping manner, the area of the three-color overlapping portion that becomes the step is reduced, and the step region is reduced. More specifically, the shape in the regions (a) and (b) of FIG. 8 of Example 3 is changed, and a three-color overlapping light shielding pattern is formed in an island shape in the light shielding region near the TFT. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the third embodiment.

  B-B 'cross section and C-C' cross section at this time are shown in FIGS. In FIG. 11, α is the width of the TFT light shielding pattern protruding from the B layer pattern, and γ is the width of the TFT light shielding pattern protruding from the R layer pattern. At this time, α and γ are set to have substantially the same width in terms of design, excluding pattern line width variations due to process variations. In FIG. 12, the minimum size is set so as to shield the TFT channel portion so as to cover only the TFT light shielding region.

  In Examples 1 to 4, an example in which the color layer mask is shared by one sheet for reducing the cost of the color filter has been shown. However, as an application example, the exposure mask for two colors is shared, and the remaining one color is used. The color filter produced with another exposure mask is shown. Therefore, two color layer masks are used.

  FIGS. 13 and 14 show an example in which the R layer and the B layer are patterned with a common mask, and only another G pattern is used for the G layer. 15, FIG. 16 and FIG. 17 show the D-D ′ cross section, E-E ′ cross section and F-F ′ cross section of FIG. 14, respectively. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the first embodiment.

  The light shielding region in the vicinity of the drain wiring (signal line) can be overlaid with two adjacent color stripe patterns, and the light shielding region in the vicinity of the gate wiring can always be overlaid with two colors of R and B. Only the G layer pattern is overlaid with three colors, but the other light-shielding regions are overlaid with two colors, and the proportion of the three-color layer steps on the surface of the color filter is smaller than in the first to fourth embodiments. However, since the TFT light-shielding regions for R and B are two-color overlapping, the light-shielding performance is a pattern that is relatively lower than in the first to fourth embodiments. Example 4 is a pattern in which priority is given to minimizing the step on the surface of the color filter while shielding the TFT and the vicinity of the TFT and the gate wiring region with two colors of R and B. However, it is inferior to Examples 1-4 in cost.

  In the first to fourth embodiments, an example in which a single color layer mask is shared for reducing the cost of the color filter has been shown. However, as an application example, a color filter in which the exposure mask patterns of each color are made independent is shown. Therefore, three color layer masks are used. 18 and 19 are examples in which the R layer, the G layer, and the B layer are patterned using different masks.

  20 shows a G-G ′ cross section of FIG. 19. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the first embodiment.

  Since the R layer, G layer, and B layer patterns are made independent, the degree of freedom of the pattern shape is increased, and the gate wiring and drain wiring are all overlapped with two colors of R and B. It was possible to obtain a three-color color filter in which a G island pattern was arranged on the color superposition layer. By making the light-shielding regions of the gate wiring and the drain wiring all overlap with R and B, higher light-shielding performance can be obtained than in the first to fourth embodiments. Further, the TFT light-shielding area that needs to be overlaid with three colors is not limited to the G portion as in the fifth embodiment, and all TFT light-shielding areas can be overlaid with three colors of R, G, and B. However, it is inferior to Examples 1-5 in cost. In addition, when the island pattern of the color layer is 10 to 20 μm or smaller, it is isolated from the stripe pattern forming the color pixel region having a thicker width, and thus is easily peeled off in the cleaning and development process. There is also the problem of becoming.

  In the first to sixth embodiments, the color pixel arrangement of the display opening is a color filter in a stripe structure. However, an overhang or isolated portion that shields the TFT from a large color layer pattern constituting the pixel, and a wiring region Can be applied to various arrangements such as a diagonal arrangement, a delta arrangement, a rectangle arrangement, and a honeycomb arrangement. Further, although the color pixel shape has been described as being substantially rectangular or rectangular, it may be a polygon such as a circle or a hexagon.

  In the seventh embodiment, as representative examples other than the stripe arrangement, examples of color filters in the delta arrangement are shown in FIG. 26, FIG. 27, and FIG. In FIG. 28, the basic structure per pixel is delta-arranged for R, G, and B. A TFT and a light shielding pattern in the vicinity of the TFT are formed so as to protrude in a rectangular shape from a relatively large pixel pattern. Neighboring pixels are arranged so as to overlap in the vertical and horizontal directions, and the vicinity of the gate wiring and drain wiring on the TFT substrate side is set as two-color overlapping light shielding. At this time, only the TFT and the light shielding area in the vicinity of the TFT are overlaid with three colors by a rectangular protruding pattern. By overlapping only the necessary parts with three colors, the light shielding required for the minimum liquid crystal display is ensured, and the other light shielding regions are overlapped with two colors to suppress steps on the color filter surface. it can. Since each color pattern is shared, only one color layer mask is required for color pattern exposure, and the cost of the color filter can be reduced.

(Comparative Example 1)
As Comparative Example 1, the conventional color filter of FIG. 21 is used, in which a black matrix pattern is formed by red and blue overlapping light-shielding portions, and each color layer of red, green, and blue is formed by a color stripe pattern. Three color pattern masks are used. Except for this change, the mask pattern, the color filter manufacturing method, and the liquid crystal device manufacturing method are the same as those in the first embodiment. Although the pattern is similar to that of the sixth embodiment, the G color stripe pattern completely runs over the two-color overlapping light-shielding portion of R and B near the gate wiring. Since the area where three colors are superimposed is larger than the island of Example 6 and the step is close to the pixel opening, alignment failure due to insufficient rubbing is likely to enter the display area. Further, only the TFT shading area of the G pixel is overlaid with three colors. Therefore, it is inferior in cost and in light shielding performance in the vicinity of the TFT as compared with the embodiment.

  An eighth embodiment is shown in FIGS. The G layer pattern is different from that of Example 1. In this example, the R layer pattern and the B layer pattern are patterned using a common mask, and only another G pattern is used.

  Next, a method for producing a color filter will be described. On the glass substrate, the G layer coloring composition is first applied using a spin coater, dried under reduced pressure, pre-baked, exposed using a photomask, developed, washed with water, and post-baked to form the G layer. Create a pattern. Subsequently, an R layer pattern and finally a B layer pattern are similarly produced. The manufacturing method of the liquid crystal device is the same as that of the first embodiment.

  For only the G layer of the first color layer, the G layer stripe pattern projects on both sides along the scanning line, and the projecting pattern on the one side projecting to the side where the thin film transistor in the vicinity of the color layer stripe pattern is disposed, The overhang pattern of the TFT light-shielding portion is deleted.

  Thus, in the color filter substrate having three color layers of R, G, and B facing the TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of the scanning line and the signal line are arranged, the TFT Each pixel of the substrate is composed of a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area, and a portion of the color filter substrate facing the light shielding area includes: A first color overlap light-shielding portion is formed by superimposing two color layers of R and B continuous from the display region, and the thin film transistor and a portion facing the vicinity of the thin film transistor in the R and G color pixels are formed. Is formed with a second color overlapping light-shielding portion in which three color layers of R, G, and B that are continuous from the color layer of the display region are superimposed, and the thin film transistor and the thin film are formed in the remaining B color pixels. In a portion opposed to the transistor near to form a color filter substrate where the third color overlapping shielding portion superposed color layers of two colors successive R and B from the color layer is formed of the display area.

  Thus, only the first color layer G layer on the color filter substrate is extended from the color stripe pattern of the color filter to the opposite sides along the scanning line of the opposing TFT substrate. For the overhang pattern, the first overhang pattern, which is the TFT light shielding portion, is removed to form a straight line, and in this embodiment other than the G layer, the third light shielding region is formed by the R layer and the B layer. As a result, the yield is further improved and the display is more uniform.

  More specific description will be given below. In order to improve the foreign matter removal rate on the CF substrate, even when the TFT light shielding pattern is continuous from the color stripe pattern of the pixel, such as when cleaning water pressure or ultrasonic conditions are strengthened, peeling or chipping does not occur. It may happen. In particular, it has been confirmed that the pattern of the first color layer formed directly on the glass is relatively frequent, and that the TFT light shielding pattern formed on the second layer or the third layer is less likely to be chipped. Yes.

  The reason is that the color layer has low adhesion to the glass. In particular, in the color pattern of the first layer, chipping may occur when the cleaning conditions are changed. In addition, the negative resist pattern of the color layer tends to be inversely tapered during development, and a small pattern such as a TFT light-shielding portion has a smaller area in contact with the glass due to development. It is thought that chipping may occur.

  Therefore, the first color layer pattern that does not form the third light-shielding region is mainly formed as a large pattern that forms the display region of the color filter, so it is compared with the pattern that forms the display region of the color filter. Since there is no TFT light-shielding pattern in the third light-shielding region, the possibility of pattern chipping or peeling due to water flow during cleaning or development is further reduced. Therefore, the yield can be improved.

  Furthermore, a third color superimposition in which a second color overlap light-shielding portion having a stack of three or more colors and at least one layer less than the color overlap layer of the second color overlap light-shielding portion and two or more color layers are superimposed Since the light shielding portion is arranged, the three-color overlapping region having a large step can be further reduced as compared with the first embodiment. Since the number of irregularities due to steps is reduced, display defects due to alignment defects caused by insufficient rubbing and scraping scraped off from the alignment film during rubbing adhere to the stepped portion are reduced, improving display uniformity. To do. In addition, if there are few steps on the color filter, the liquid crystal spreads more evenly when the liquid crystal is injected into the panel by the injection or dripping method, etc., so the amount of liquid crystal in the surface becomes uniform, causing cell gap defects and liquid crystal injection There are no defects and the display uniformity is improved. Further, when liquid crystal alignment is disturbed due to scraps scraped off from the alignment film during rubbing and adhering to the steps, unnecessary light leakage occurs in all black pixels that are not displayed. This light leakage causes a decrease in display contrast. By reducing the number of irregularities due to steps as in the present invention, high alignment can be maintained by preventing liquid crystal alignment disturbance and preventing light leakage during all black display.

  In addition, although a part of the TFT light-shielding pattern region is overlapped with two colors, the first color layer is made the G layer as in Example 8, so that the B pixel portion TFT light-shielding pattern without the G layer can be changed to R and A laminated structure of B can be obtained. As a result, the R layer is used to avoid degradation of characteristics such as light leakage due to the incident of external light on the TFT, and the R and B laminated structure can provide sufficient light shielding performance (OD value). However, a necessary and sufficient display quality can be obtained for applications other than those requiring a very high contrast ratio as a liquid crystal display device.

  In the color resist specification color filter used in the examples, the OD values shown in the following table were obtained when the R, G, and B layer thicknesses were about 1.5 μm and the chromaticity range was about 60% NTSC ratio. . FIG. 41 shows the spectral transmission spectrum of each color layer used in the color filter at that time. In Table 1, no. Reference numerals 1 to 5 represent OD values at the respective portions of the color filter of the eighth embodiment. No. 6 is a result of a color filter using the mask of Example 1 as a reference example, using the first color layer as the G layer, the second color layer as the R layer, and the third color layer as the B layer.

  No. 3 and no. 6 is compared, in the light shielding region near the TFT of the B pixel, the OD value becomes a value around 2 regardless of the presence or absence of the TFT light shielding pattern of the G layer of the first color layer. The first color layer (G layer) The influence of a decrease in the OD value due to the omission of the TFT light-shielding pattern can be minimized.

  Further, in Example 8, a third color overlapping light shielding portion is formed in the light shielding region in the vicinity of the TFT of the B pixel by superimposing two color layers of R and B continuous from the color layer of the display region. Unlike other R and G pixels, it has a structure with one layer fewer. Therefore, the light shielding region in the vicinity of the TFT of the B pixel has a lower level than the portion of the R or G pixel. When the problem related to rubbing occurs, the color difference, which is a color change perceived by the human eye, has a characteristic of sensing the change in B more sensitively than R and G. The change in sheath chromaticity is more conspicuous than other colors, and the influence on display quality with respect to display uniformity is great. In the present invention, as described above, by reducing the level difference in the light shielding region near the TFT of the B pixel, display defects in the B pixel can be prevented, display uniformity can be improved, and display quality can be improved.

  As described above, according to the eighth embodiment, it is possible to further improve the pattern peeling in the cleaning and development of the CF manufacturing process while maintaining the light shielding performance, and it is possible to further improve the yield and display uniformity. .

  In Example 8, the case where the first overhanging portion of the color layer pattern formed on the first layer on the glass substrate does not exist has been described. However, the first overhanging portion does not cover the adjacent thin film transistor. The case of degeneration is relatively inferior to that of Example 8, but the same effect as described above can be obtained, the frequency of occurrence of defects such as peeling can be reduced, and the yield can be improved.

  A ninth embodiment is shown in FIGS. The G and B patterns are different from the first embodiment. Next, a method for producing a color filter will be described. On the glass substrate, the G layer coloring composition is first applied using a spin coater, dried under reduced pressure, pre-baked, exposed using a photomask, developed, washed with water, and post-baked to form the G layer. Create a pattern. Subsequently, an R layer pattern and finally a B layer pattern are similarly produced. The manufacturing method of the liquid crystal device is the same as that of the first embodiment.

  Regarding the G layer of the first color layer, the G stripe pattern is projected on both sides along the scanning line, and the projected pattern is deleted to form a straight line. Further, only the third-layer B color layer pattern on the glass substrate is formed with protruding portions having the same size on both sides of the color stripe pattern.

  Thus, in the color filter substrate having three color layers of R, G, and B facing the TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of the scanning line and the signal line are arranged, the TFT Each pixel of the substrate includes a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area, and a portion of the color filter substrate facing the light shielding area of the scanning line Includes a first color overlapping light-shielding portion in which two color layers of R and B continuous from the display region are superimposed, and a portion facing the thin film transistor and the vicinity of the thin film transistor in a G color pixel Is formed with a second color overlapping light-shielding portion in which three color layers of R, G, and B that are continuous from the color layer of the display region are superimposed, and the thin film transistor in the remaining R and B color pixels In addition, a color filter substrate having a third color overlapping light shielding portion formed by superimposing two color layers of R and B continuous from the color layer of the display region is formed in a portion facing the vicinity of the thin film transistor. .

  In this way, with respect to the G layer of the first color layer, the G stripe pattern is projected on both sides along the scanning line, the projected pattern is deleted to make a straight line, and further, the second and subsequent layers on the glass substrate Only one of the color layer patterns is formed with protruding portions having the same size on both sides of the color stripe pattern, thereby improving the yield.

  More specific description will be given below. In Example 9, when the cleaning water pressure and ultrasonic conditions were reinforced to improve the foreign matter removal rate on the CF substrate, the overhanging pattern may be peeled off or chipped in the first color pattern on the glass substrate. Is almost lost.

  The first color layer on the glass substrate is the G layer, and the first and second protruding portions having the same shape and size are formed on both sides of the color stripe pattern only in the B color layer pattern of the third layer.

  As a result, for the portion of the G layer that does not have an overhanging light shielding pattern, the light shielding pattern that covers the portion that opposes the light shielding region of the scanning line and the portion that opposes the thin film transistor and the vicinity of the thin film transistor has Can be formed. Therefore, necessary and sufficient display quality can be obtained for the same reason as that described in Example 8.

  At this time, the second layer is an R color layer, but the B color layer is arranged in the second layer and the R color layer is arranged in the third layer without changing the color layer pattern shapes of R and B respectively. Similar effects can be obtained.

  As described above, according to the ninth embodiment, it is possible to improve pattern peeling in the cleaning and development of the CF manufacturing process while maintaining the light shielding performance, thereby further improving the yield.

  Examples of utilization of the present invention include a liquid crystal display device, a field emission display device using a color filter, a fluorescent display device, a plasma display, and an imaging device.

It is a top view which shows the color filter of the 1st Example of this invention. It is sectional drawing (A-A 'cross section of FIG. 1) of the color filter of 1st Example of this invention. It is a top view which shows TFT of the 1st Example of this invention, and the light-shielding pattern of TFT vicinity. It is a top view which shows TFT of the 1st Example of this invention, and the light-shielding pattern of TFT vicinity (only G layer is displayed). It is a top view which shows TFT of the 2nd Example of this invention, and the light-shielding pattern of TFT vicinity. It is a top view which shows TFT of the 2nd Example of this invention, and the light-shielding pattern of TFT vicinity (only G layer is displayed). It is a figure which shows the angle of the light-shielding pattern of the 2nd Example of this invention. It is a figure which shows the angle of the light-shielding pattern of the 3rd Example of this invention. It is a top view which shows TFT of the 4th Example of this invention, and the light-shielding pattern of TFT vicinity. It is a top view which shows TFT of the 4th Example of this invention, and the light shielding pattern (only G layer is displayed) of TFT vicinity. It is sectional drawing (B-B 'cross section of FIG. 9) of the color filter of the 4th Example of this invention. It is sectional drawing (C-C 'cross section of FIG. 9) of the color filter of the 4th Example of this invention. It is a top view which shows the color filter (pattern for each color layer) of the 5th Example of this invention. It is a top view which shows the color filter of the 5th Example of this invention. It is sectional drawing (D-D 'cross section of FIG. 14) of the color filter of the 5th Example of this invention. It is sectional drawing (E-E 'cross section of FIG. 14) of the color filter of the 5th Example of this invention. It is sectional drawing (F-F 'cross section of FIG. 14) of the color filter of the 5th Example of this invention. It is a top view which shows the color filter (pattern for each color layer) of the 6th Example of this invention. It is a top view which shows the color filter of the 6th Example of this invention. It is sectional drawing (G-G 'cross section of FIG. 19) of the color filter of the 6th Example of this invention. It is a top view which shows the conventional color filter. It is sectional drawing (H-H 'cross section of FIG. 21) of the conventional color filter. FIG. 2 is a plan view showing the TFT in FIG. 1 and the vicinity of the TFT in JP-A-2004-62145. FIG. 3 is a cross-sectional view showing the TFT of FIG. FIG. 22 is a plan view showing details of the TFT in FIG. It is a top view which shows the delta arrangement | sequence color filter of the 7th Example of this invention. It is a top view which shows the delta arrangement | sequence color filter (only G layer is displayed) of the 7th Example of this invention. It is a top view which shows the basic pattern (only G layer is displayed) of the color layer of the delta arrangement | sequence color filter of the 7th Example of this invention. It is the top view which piled up the CF substrate and TFT substrate of the 1st example. FIG. 30 is a cross-sectional view (K-K ′ cross-section of FIG. 29) in which the CF substrate and the TFT substrate of the first embodiment are overlaid. It is a figure which shows the area | region of a 3 color overlapping light-shielding pattern and a 2 color overlapping light-shielding pattern when a TFT substrate and a CF substrate are overlapped. It is a figure which shows the relationship between the 2 color overlapping light-shielding pattern and gate wiring when a TFT substrate and CF board | substrate are piled up. It is a figure for defining the TFT vicinity area. It is a figure which shows the color layer pattern (an isolated pattern and a continuous pattern) of a TFT light shielding area. It is a figure which shows the mode of the rubbing in an isolated pattern (R-R 'cross section of FIG. 34). It is a figure which shows the mode of the rubbing in a continuous pattern (S-S 'cross section of FIG. 34). It is a top view which shows the color filter of the 8th Example of this invention. It is a top view which shows the color filter (pattern for each color layer) of the 8th Example of this invention. It is a top view which shows the color filter of the 9th Example of this invention. It is a top view which shows the color filter (pattern for each color layer) of the 9th Example of this invention. It is a figure which shows the spectral transmission spectrum of each color layer used for the Example.

Explanation of symbols

10 TFT substrate 11 Transparent insulator substrate 12, 41 Gate wiring (scanning line)
12a Gate electrode 13, 42 Common electrode wiring 14, 43 Drain wiring (signal line)
14a Drain electrode 14b Source electrode 15, 44 Pixel electrode 16, 45 TFT
17, 46 Common electrode 18 Contact hole 20 CF substrate 21 Transparent insulator substrate 22a R layer 22b G layer 22c B layer 23 Overcoat layer (OC layer)
24 Alignment film 30 Liquid crystal layer 31 Columnar spacer 47 Black matrix layer

Claims (20)

In a color filter substrate including three or more color layers facing a TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of a scanning line and a signal line are arranged,
Each pixel of the TFT substrate comprises a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area,
The color filter substrate has a display region and a light shielding region around the display region, and the light shielding region portion on the color filter substrate side facing the light shielding region of the TFT substrate is continuous from the display region of the color filter substrate. A first color overlap light-shielding portion in which two or more color layers are superposed is formed, and the color filter substrate display is provided in the light-shielding region portion on the color filter substrate side facing the thin film transistor and the vicinity of the thin film transistor. A color filter substrate, wherein a second color overlap light-shielding portion is formed by superimposing three or more color layers continuous from a color layer in a region.   2. Each of the color layers has a color stripe pattern extending in an extending direction of the signal line, and an overhanging portion extending along the scanning line from both sides of the color stripe pattern. The color filter substrate described in 1. The projecting portion is composed of a first projecting portion projecting to the side where the thin film transistor is disposed and a second projecting portion projecting to the opposite side,
The first overhang is formed smaller than the second overhang;
The adjacent color stripe patterns are arranged so as to partially overlap,
On the signal line, the first color overlap light shielding portion is formed by the adjacent color stripe pattern,
On the scanning line, the first color overlap light shielding portion is formed by a predetermined color stripe pattern and the second protruding portion of the color stripe pattern adjacent to one side of the predetermined color stripe pattern, And the predetermined color stripe pattern, the second protruding portion of the color stripe pattern adjacent to one side of the predetermined color stripe pattern, and the color stripe adjacent to the other side of the predetermined color stripe pattern 3. The color filter substrate according to claim 2, wherein the second color overlap light-shielding portion is formed by the first projecting portion of the pattern.   The second protruding portion of the color stripe pattern adjacent to one side of the predetermined color stripe pattern and the first protruding portion of the color stripe pattern adjacent to the other side of the predetermined color stripe pattern The color filter substrate according to claim 3, wherein the color filter substrate is arranged so as not to overlap each other.   5. The color filter substrate according to claim 3, further comprising a forward taper-shaped inclined portion on the color stripe pattern side of the first projecting portion and / or the second projecting portion. When the angle formed by the side of the inclined portion and the rubbing direction of the color filter substrate is χ,
45 degrees ≤ χ ≤ 135 degrees,
The color filter substrate according to claim 5, wherein the relationship is satisfied.   The color filter substrate according to claim 1, wherein the color layers of at least two colors are formed in the same pattern.   The color filter substrate according to claim 1, wherein all the color layers are formed in the same pattern. The first color overlap light-shielding portion and the second color overlap light-shielding portion on the scanning line include a first color layer that shields a wavelength causing light leakage of the thin film transistor, and a main transmission wavelength region of the color layer The color filter substrate according to claim 1, further comprising a second color layer that absorbs light and shields light.   The color filter substrate according to claim 9, wherein the first color layer is a red color layer, and the second color layer is a blue color layer. The first color overlap light-shielding portion and the second color overlap light-shielding portion on the scanning line include two color layers having the lowest transmittance when combined among the three or more color layers. The color filter substrate according to claim 1, wherein the color filter substrate is a color filter substrate. In a color filter substrate including three or more color layers facing a TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of a scanning line and a signal line are arranged,
Each pixel of the TFT substrate comprises a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area,
The color filter substrate has a display region and a light shielding region around the display region, and the light shielding region portion on the color filter substrate side facing the light shielding region of the TFT substrate is continuous from the display region of the color filter substrate. A first color overlapping light-shielding portion in which two or more color layers are superimposed is formed, and at least in one color pixel, the thin-film transistor and the light-shielding region portion on the color filter substrate side facing the vicinity of the thin-film transistor A second color overlap light shielding portion is formed by superimposing three or more color layers continuous from the color layer of the display area of the color filter substrate, and the remaining color pixels face the thin film transistor and the vicinity of the thin film transistor. The light shielding area on the color filter substrate side is continuous from the color layer of the display area of the color filter substrate. Always color filter substrate, wherein a third color overlapping shielding portion superimposed at least one color color layer portion of reduced and 2 or more colors layer than the second color overlapping the light shielding portion is formed with . In the color layer pattern formed in the first layer on the glass substrate, a first projecting portion projecting to the side where the thin film transistor is disposed in the vicinity of the color layer pattern and a second projecting portion projecting to the opposite side 13. The color filter substrate according to claim 12 , wherein the first projecting portion is degenerated so as not to cover a neighboring thin film transistor . In the color layer pattern formed in the first layer on the glass substrate, a first projecting portion projecting to the side where the thin film transistor is disposed in the vicinity of the color layer pattern and a second projecting portion projecting to the opposite side The color filter substrate according to claim 12 , wherein none of the above exists . 15. The color filter substrate according to claim 12 , wherein the color layer pattern formed in the first layer on the glass substrate is a green color layer . In a color filter substrate having three color layers of Red, Green, and Blue facing a TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of a scanning line and a signal line are arranged,
Each pixel of the TFT substrate comprises a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area,
The color filter substrate has a display region and a light shielding region around the display region, and the light shielding region portion on the color filter substrate side of the TFT substrate facing the light shielding region of the scanning line is on the color filter substrate side. A first color-overlapping light-shielding portion formed by superimposing two red and blue color layers continuous from a display region, and the thin-film transistor and the color filter facing the vicinity of the thin-film transistor in a pixel of red and green color In the light shielding area portion on the substrate side, a second color overlapping light shielding section is formed by superimposing three color layers of red, green and blue from the color layer of the display area on the color filter substrate side, and the rest In the blue color pixel of the color filter substrate side facing the thin film transistor and the vicinity of the thin film transistor The optical region portion, wherein the third color overlapping shielding portion superposed Red color layer of two colors of Blue continuous from the color layer of the color filter substrate side of the display region is formed Color filter substrate. In a color filter substrate having three color layers of Red, Green, and Blue facing a TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of the intersection of a scanning line and a signal line are arranged,
Each pixel of the TFT substrate comprises a display area surrounded by the scanning lines and the signal lines, and a light shielding area around the display area,
The color filter substrate has a display region and a light shielding region around the display region, and the light shielding region portion on the color filter substrate side of the TFT substrate facing the light shielding region of the scanning line is on the color filter substrate side. A first color-overlapping light-shielding portion formed by superimposing two color layers of Red and Blue continuous from the display region, and the color filter substrate side facing the thin film transistor and the vicinity of the thin film transistor in a green color pixel In the light shielding region portion, a second color overlapping light shielding portion is formed by superimposing three color layers of Red, Green, and Blue, which are continuous from the color layer of the display region on the color filter substrate side, and the remaining Red And blue color pixels on the side of the color filter substrate facing the thin film transistor and the vicinity of the thin film transistor. The optical region portion, wherein the third color overlapping shielding portion superposed Red color layer of two colors of Blue continuous from the color layer of the color filter substrate side of the display region is formed Color filter substrate. A liquid crystal display device using the color filter substrate according to claim 1 . In a method for manufacturing a color filter substrate having a color layer of three or more colors facing a TFT substrate on which a plurality of pixels in which thin film transistors are arranged in the vicinity of an intersection of a scanning line and a signal line are arranged,
An exposure pattern having a color stripe pattern extending in the extending direction of the signal line and an overhanging portion extending along the scanning line from both sides of the color stripe pattern is shifted at least one pixel at a time in the scanning line direction. Forming two or more color layers,
A color layer of one color is disposed in the display area portion on the color filter substrate side facing the display area of the TFT substrate surrounded by the scanning lines and the signal lines, and the periphery of the display area of the TFT substrate Forming a first color overlapping light shielding portion in which two or more color layers continuous from the display region on the color filter substrate are superimposed on the light shielding region portion on the color filter substrate side facing the light shielding region; Second color superposition in which three or more color layers continuous from the color layer of the display region on the color filter substrate side are superimposed on the light shielding region portion on the color filter substrate side facing the thin film transistor and the vicinity of the thin film transistor A method for producing a color filter substrate , comprising forming a light shielding portion . The three or more color layers are a red color layer, a green color layer, and a blue color layer,
Using the exposing pattern, Blue color layer, Red color layer, Green color layer, or, Red color layer, Blue color layer, Green colors layer, claims, characterized in that formed in this order Item 20. A method for producing a color filter substrate according to Item 19 .

Images