JP5140437B2 - マスクの評価すべきパターンを評価するための方法及びシステム - Google Patents

マスクの評価すべきパターンを評価するための方法及びシステム Download PDF

Info

Publication number
JP5140437B2
JP5140437B2 JP2008003611A JP2008003611A JP5140437B2 JP 5140437 B2 JP5140437 B2 JP 5140437B2 JP 2008003611 A JP2008003611 A JP 2008003611A JP 2008003611 A JP2008003611 A JP 2008003611A JP 5140437 B2 JP5140437 B2 JP 5140437B2
Authority
JP
Japan
Prior art keywords
pattern
evaluated
moments
difference
nominal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008003611A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008181124A (ja
JP2008181124A5 (enExample
Inventor
シュワルツバンド イシャイ
マンガン シュムーリク
ブラウデ チャイム
ベン−イーシャイ マイケル
グリーンバーグ ガディー，
Original Assignee
アプライド マテリアルズ イスラエル リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アプライド マテリアルズ イスラエル リミテッド filed Critical アプライド マテリアルズ イスラエル リミテッド
Publication of JP2008181124A publication Critical patent/JP2008181124A/ja
Publication of JP2008181124A5 publication Critical patent/JP2008181124A5/ja
Application granted granted Critical
Publication of JP5140437B2 publication Critical patent/JP5140437B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/66—Analysis of geometric attributes of image moments or centre of gravity
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Analysis (AREA)
JP2008003611A 2007-01-10 2008-01-10 マスクの評価すべきパターンを評価するための方法及びシステム Expired - Fee Related JP5140437B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88430807P 2007-01-10 2007-01-10
US60/884,308 2007-01-10

Publications (3)

Publication Number Publication Date
JP2008181124A JP2008181124A (ja) 2008-08-07
JP2008181124A5 JP2008181124A5 (enExample) 2012-11-01
JP5140437B2 true JP5140437B2 (ja) 2013-02-06

Family

ID=39594343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008003611A Expired - Fee Related JP5140437B2 (ja) 2007-01-10 2008-01-10 マスクの評価すべきパターンを評価するための方法及びシステム

Country Status (4)

Country Link
US (1) US8098926B2 (enExample)
JP (1) JP5140437B2 (enExample)
KR (1) KR101267873B1 (enExample)
CN (1) CN101436216B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2008957A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
US9341580B2 (en) * 2014-06-27 2016-05-17 Applied Materials, Inc. Linear inspection system
CN109891319B (zh) * 2016-10-24 2023-11-10 Asml荷兰有限公司 用于优化图案化装置图案的方法
US11321835B2 (en) * 2020-03-17 2022-05-03 Applied Materials Israel Ltd. Determining three dimensional information

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996642A (ja) * 1982-11-24 1984-06-04 Hamamatsu Photonics Kk 二次電子増倍器の製造方法
JPS6033679A (ja) * 1983-08-04 1985-02-21 Nec Corp モ−メント算出回路
JP2700260B2 (ja) * 1988-11-18 1998-01-19 株式会社日立製作所 画像処理装置
JP3247823B2 (ja) * 1995-06-26 2002-01-21 株式会社日立製作所 欠陥検査方法およびその装置並びに薄膜磁気ヘッド用の素子の製造方法
JPH09147109A (ja) * 1995-11-20 1997-06-06 Ricoh Co Ltd 特定マーク検出方法及び特定マーク検出装置
JPH1049684A (ja) * 1996-07-31 1998-02-20 Nec Corp 高速モーメント計算装置
JP3675629B2 (ja) * 1997-08-04 2005-07-27 株式会社リコー パターン認識方法、装置および記録媒体
US6081658A (en) * 1997-12-31 2000-06-27 Avant! Corporation Proximity correction system for wafer lithography
US6603873B1 (en) * 1999-11-12 2003-08-05 Applied Materials, Inc. Defect detection using gray level signatures
JP2004013095A (ja) * 2002-06-11 2004-01-15 Fujitsu Ltd パターン画像比較方法、パターン画像比較装置及びプログラム
JP2004212277A (ja) * 2003-01-07 2004-07-29 Orbotech Ltd パターンを検査するための方法

Also Published As

Publication number Publication date
CN101436216A (zh) 2009-05-20
US20080166038A1 (en) 2008-07-10
KR20080065942A (ko) 2008-07-15
JP2008181124A (ja) 2008-08-07
CN101436216B (zh) 2013-03-06
KR101267873B1 (ko) 2013-05-27
US8098926B2 (en) 2012-01-17

Similar Documents

Publication Publication Date Title
CN108490735B (zh) 全芯片掩模图案生成的方法、装置及计算机可读介质
US8078996B2 (en) Method and system for correcting a mask pattern design
US7861195B2 (en) Process for design of semiconductor circuits
US8359562B2 (en) System and method for semiconductor device fabrication using modeling
US8473271B2 (en) Fast photolithography process simulation to predict remaining resist thickness
US20090193387A1 (en) Methodology and system for determining numerical errors in pixel-based imaging simulation in designing lithographic masks
US8681326B2 (en) Method and apparatus for monitoring mask process impact on lithography performance
CN117010318B (zh) 用于版图处理的方法、设备和介质
JP5140437B2 (ja) マスクの評価すべきパターンを評価するための方法及びシステム
US7844939B2 (en) Mask pattern correction program and system
Wang et al. Distortion-free intelligent sampling of sparse surfaces via locally refined T-spline metamodelling
WO2008103208A1 (en) Simulation site placement for lithographic process models
US10691015B2 (en) Integrated mask-aware lithography modeling to support off-axis illumination and multi-tone masks
CN110334450B (zh) 一种多块结构网格生成中物面投影错误的修复方法
US7506285B2 (en) Multi-dimensional analysis for predicting RET model accuracy
CN101526735A (zh) 光掩模设计方法以及使用光掩模制造半导体器件的方法
US10564554B2 (en) System and method for analyzing printed masks for lithography based on representative contours
TW202516287A (zh) 基於製程模型之掃描電子顯微鏡（ｓｅｍ）影像失真校正
US20140123083A1 (en) Automatic wafer data sample planning and review
US20130336571A1 (en) Mask pattern analysis apparatus and method for analyzing mask pattern
JP7094594B2 (ja) 処理条件推定装置、方法及びプログラム
CN120315261B (zh) 一种光学邻近校正模型的建模方法、系统及计算机设备
JP7570573B1 (ja) 加工プログラム修正装置、加工システムおよび加工方法
US20250224666A1 (en) Method for optimizing optical proximity correction model and method for manufacturing semiconductor device including the same
CN115343845A (zh) 拼接式反射镜的面形精度仿真方法、装置、设备

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101214

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110107

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120918

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20120918

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20120925

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121018

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121119

R150 Certificate of patent or registration of utility model

Ref document number: 5140437

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees