JP5137418B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a photoelectric conversion device that outputs received light to an electrical signal, and a semiconductor device having the photoelectric conversion device.

  As photoelectric conversion devices used for detecting electromagnetic waves, those having sensitivity from ultraviolet rays to infrared rays are collectively called optical sensors. Among them, those having sensitivity in the visible light region with a wavelength of 400 nm to 700 nm are also called visible light sensors, and are used in many devices that require illuminance adjustment and on / off control according to the living environment ( For example, see Patent Document 1).

  In the case where the color sensor is manufactured using single crystal silicon (single crystal silicon (Si)), since the light is received on the surface side of the single crystal silicon substrate, the color filter is disposed on the outermost surface of the substrate. Further, a color sensor using single crystal silicon is often manufactured so as to prevent infrared absorption using an infrared cut filter and to have a desired spectral sensitivity.

On the other hand, when a sensor is manufactured using amorphous silicon (amorphous silicon (a-Si)), since an amorphous silicon film can be formed on the substrate, light is transmitted not only from the substrate surface side but also from the substrate side. Can be made incident. That is, light can be efficiently introduced because the sensor can receive light through the substrate. Therefore, the extraction electrode can be installed on a surface different from the light incident surface, and the sensor can be easily downsized. Further, since the amorphous silicon film hardly absorbs infrared light, it is not necessary to provide an infrared cut filter. However, when a color sensor is manufactured using an amorphous silicon film, a color filter is provided between the photoelectric conversion layer formed of the amorphous silicon film and the substrate.
JP 2005-129909 A

  A color filter used for manufacturing a color sensor contains a substance that causes metal contamination such as copper (Cu), sodium (Na), potassium (K), and the like. It is necessary to prevent contamination so that such a substance does not enter the photoelectric conversion layer and the transistor of the sensor.

  It is an object of the present invention to obtain a photoelectric conversion device that does not mix such a contaminant into a photoelectric conversion layer or a transistor, has good spectral sensitivity characteristics, and has no variation in output current. Furthermore, it is an object to obtain a highly reliable semiconductor device in a semiconductor device including such a photoelectric conversion device.

  In a photoelectric conversion device provided with a color filter, measures for preventing contamination can be taken by providing an overcoat layer.

  However, in the subsequent steps, when the overcoat layer disappears due to etching or the like, contaminants may diffuse into the photoelectric conversion layer.

  Also, in order to prevent the diffusion of contaminants, when a color filter is installed only in the area inside the photoelectric conversion layer and an overcoat layer is formed thereon, between the overcoat layer end and the photoelectric conversion layer end The light that does not pass through the color filter is incident. Since even such light is sensed, the spectral sensitivity characteristic of the photoelectric conversion device is deteriorated.

  In addition, the color sensor needs to suppress variation in particular because of its usage, but when an amorphous silicon film is formed as a photoelectric conversion layer with a pattern using a printing method, the area of the amorphous silicon film is likely to vary. As a result, the output value varies.

  In the present invention, a light shielding layer is provided with a metal or the like between the photoelectric conversion layer of the amorphous silicon film and the substrate, and only the vicinity of the end portion of the photoelectric conversion layer is hidden with the light shielding layer. For the production of the light shielding layer, the variation in incident light can be suppressed to the level of variation in photolithography by producing the light shielding layer by photolithography having a finer design rule than the printing method.

  In the present invention, the color filter may be disposed at least inside the entire light transmitting region and the end of the photoelectric conversion layer. An overcoat layer is formed covering the color filter. The overcoat layer is formed so as to be in contact with at least the entire lower surface except the contact portion with the electrode of the photoelectric conversion layer. As a result, the color filter was covered with the overcoat layer even when the overcoat layer was etched by overetching during the etching process of the amorphous silicon film, which is the photoelectric conversion layer, or in the subsequent process. Since the state can be maintained, contamination can be prevented.

  Further, if necessary, a passivation film may be formed on the overcoat layer to suppress contamination of the photoelectric conversion layer. In addition, a passivation film may be formed between the color filter and the gate insulating film of the transistor to suppress contamination of the transistor with the contaminant. The passivation film may be formed using silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen.

  The present invention has a photoelectric conversion layer including a light shielding layer, a first semiconductor layer of one conductivity type, a second semiconductor layer, and a third semiconductor layer of a conductivity type opposite to the one conductivity type, The layer relates to a photoelectric conversion device characterized in that at least an end portion of the photoelectric conversion layer is shielded from light.

  The present invention includes a photoelectric conversion layer including a thin film transistor, a light shielding layer, a first semiconductor layer of one conductivity type, a second semiconductor layer, and a third semiconductor layer of a conductivity type opposite to the one conductivity type. The light shielding layer relates to a photoelectric conversion device characterized in that at least an end portion of the photoelectric conversion layer is shielded from light.

  In the present invention, the light shielding layer has conductivity, and the first electrode and the first semiconductor layer are in electrical contact with each other.

  In the present invention, the light shielding layer has conductivity, and the light shielding layer and the photoelectric conversion layer are not in contact with each other by an insulating material formed therebetween.

  In the present invention, the light shielding layer shields at least a channel portion of the thin film transistor.

  The present invention includes a light shielding layer, a color filter, an overcoat layer covering the color filter, a first semiconductor layer of one conductivity type, a second semiconductor layer, and a one conductivity type on the overcoat layer. And a light-shielding layer that shields at least the edge of the photoelectric conversion layer, the edge of the color filter, and the edge of the overcoat layer. The present invention relates to a photoelectric conversion device.

  The present invention includes a thin film transistor, a light shielding layer, a color filter, an overcoat layer covering the color filter, a first semiconductor layer of one conductivity type on the overcoat layer, a second semiconductor layer, The photoelectric conversion layer includes a third semiconductor layer having a conductivity type opposite to the one conductivity type, and the light shielding layer includes at least an end portion of the photoelectric conversion layer, an end portion of the color filter, and an end portion of the overcoat layer. The present invention relates to a photoelectric conversion device that is shielded from light.

  In the present invention, a passivation layer is provided between the gate insulating film of the thin film transistor and the color filter.

  In the present invention, the passivation layer is any one of silicon nitride, silicon oxide, silicon oxide containing nitrogen, and silicon nitride containing oxygen.

  In the present invention, the light shielding layer shields at least a channel portion of the thin film transistor.

  In this invention, the edge part of the said photoelectric converting layer exists outside the edge part of the said color filter.

  In the present invention, the end portion of the overcoat layer is outside the end portion of the photoelectric conversion layer.

  In the present invention, the light shielding layer has electrical conductivity, and the light shielding layer and the first semiconductor layer are in electrical contact with each other.

  In the present invention, the light shielding layer has conductivity, and the light shielding layer and the photoelectric conversion layer are not in contact with each other by an insulating material formed therebetween.

  In the present invention, the overcoat layer is an organic resin insulating material, an inorganic insulating material, or a laminate of an organic insulating material and an inorganic insulating material.

  In the present invention, the organic resin insulating material is acrylic or polyimide.

  In the present invention, the inorganic insulating material is any one of silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen.

  In the present invention, each of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is an amorphous semiconductor layer or a semi-amorphous semiconductor layer.

  On the insulating surface, the present invention provides a first electrode and a second electrode, a color filter between the first electrode and the second electrode, an overcoat layer covering the color filter, A photoelectric conversion layer having a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to that of the first semiconductor film on the overcoat layer One end portion of the photoelectric conversion layer is in contact with the first electrode, and the end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. The present invention relates to a conversion device.

  In the present invention, the insulating surface is a surface of a substrate, and the substrate is a light-transmitting glass substrate or a flexible substrate.

  In the present invention, the insulating surface is a surface of an insulating film provided on a substrate, and the insulating film is a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a silicon nitride film containing oxygen. It is one of them.

  The present invention includes a thin film transistor having an active layer, a gate insulating film, a gate electrode, a source electrode and a drain electrode on a substrate, an interlayer insulating film covering the active layer, the gate insulating film and the gate electrode of the thin film transistor, and the interlayer insulation. A first electrode and a second electrode formed on the film; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and the overcoat A photoelectric conversion layer having a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to the first semiconductor film on the layer; One end portion of the photoelectric conversion layer is in contact with the first electrode, and the end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. Is.

  In the present invention, the substrate is a light-transmitting glass substrate or a flexible substrate.

  In the present invention, the overcoat layer is a light-transmitting organic resin insulating material.

  In the present invention, the translucent organic resin insulating material is acrylic or polyimide.

  In the present invention, the overcoat layer is a translucent inorganic insulating material.

  In the present invention, the light-transmitting inorganic insulating material is any one of silicon nitride, silicon oxide, a silicon oxide film containing nitrogen, and silicon nitride containing oxygen.

  In the present invention, each of the first to third semiconductor films is an amorphous semiconductor film or a semi-amorphous semiconductor film.

  Note that in this specification, a semiconductor device refers to all elements and devices that function by using a semiconductor, and includes an electro-optical device including a liquid crystal display device and an electronic device including the electro-optical device as its category. . That is, in this specification, it can be said that a photoelectric conversion device is also a category of a semiconductor device.

  By shielding the incident light with the lower layer electrode, it is possible to suppress variation in light incident on the photodiode, and as a result, it is possible to reduce variation in output current.

  Even when overetching occurs in the process, contamination of the color filter can be prevented, and further, good spectral sensitivity can be obtained, so that the device characteristics can be improved.

  Embodiments of the present invention will be described below. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

[Embodiment 1]
This embodiment is described with reference to FIGS. 1, 2A to 2B, 3A to 3B, 4A to 4B, and 5A. FIGS. 5B, 6, 7, 8 </ b> A to 8 </ b> B, 9 </ b> A to 9 </ b> B, 12, and FIGS. D).

  However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

  FIG. 6 shows a cross-sectional view of the photoelectric conversion device of the present invention. The photoelectric conversion device of the present invention includes an electrode 101 and an electrode 102 on the insulating surface 100, a color filter 103 formed between the electrode 101 and the electrode 102, an overcoat layer 104 formed so as to cover the color filter 103, The photoelectric conversion layer 105 is formed on the overcoat layer 104 and is electrically connected by being in partial contact with the electrode 101.

  The insulating surface 100 may be the substrate surface or an insulating film surface provided on the substrate as described later. When using a substrate, a light-transmitting glass substrate or a flexible substrate may be used. In the case of using an insulating film provided over a substrate, the substrate and the insulating film preferably have a light-transmitting property. Examples of such an insulating film include a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, and a silicon nitride film containing oxygen.

  Note that in the case where light is incident on the photoelectric conversion layer 105 from the insulating surface 100 side, it is preferable that a material that forms the insulating surface 100, for example, a substrate or an insulating film, has high light transmittance. In addition, by making the material constituting the insulating surface 100 selective to the transmission wavelength with respect to the wavelength in the visible light range, an optical sensor having sensitivity in a specific wavelength range can be obtained.

  Further, titanium (Ti) is used for the electrode 101 and the electrode 102. The electrode 101 and the electrode 102 are only required to be conductive, and may be a single layer film or a laminated film. However, since the electrode 101 and the electrode 102 also function as a light-shielding film for the photoelectric conversion layer 105, a light-shielding material needs to be used.

  The overcoat layer 104 that covers the color filter 103 may be formed using a light-transmitting insulating material. For example, an organic resin material such as acrylic or polyimide, an inorganic material such as silicon nitride, silicon oxide, a silicon oxide film containing nitrogen, or silicon nitride containing oxygen can be used. Further, it can be formed using a laminated film in which these materials are laminated. The electrode 102 is not in contact with the photoelectric conversion layer 105 by the color filter 103 and the overcoat layer 104 containing an insulating material.

The photoelectric conversion layer 105 includes a first semiconductor film having one conductivity, a second semiconductor film, and a third semiconductor film having conductivity opposite to that of the first semiconductor film. For example, in this embodiment, as the photoelectric conversion layer 105, a p-type semiconductor film 105p, an i-type semiconductor film (also referred to as an intrinsic semiconductor layer) 105i, and an n-type semiconductor film 105n are used. In this embodiment, a silicon film (silicon film) is used as the semiconductor film. The semiconductor film may be amorphous or semi-amorphous. Note that in this specification, an i-type semiconductor film has a concentration of p-type or n-type impurities contained in a semiconductor film of 1 × 10 ²⁰ cm ⁻³ or less and oxygen and nitrogen of 5 × 10 ^19. It refers to a semiconductor film having a concentration of cm ⁻³ or less and a photoconductivity of 100 times or more with respect to dark conductivity. Further, 10 to 1000 ppm of boron (B) may be added to the i-type semiconductor film.

Note that a semi-amorphous semiconductor film is a film including a semiconductor having a structure intermediate between an amorphous semiconductor and a semiconductor (including single crystal and polycrystal) films having a crystal structure. This semi-amorphous semiconductor film is a semiconductor film having a third state that is stable in terms of free energy, and is a crystalline film having short-range order and lattice distortion, and has a grain size of 0.5 to 20 nm. And can be dispersed in the non-single-crystal semiconductor film. The semi-amorphous semiconductor film has its Raman spectrum shifted to a lower wavenumber than 520 cm ⁻¹ , and diffraction peaks of (111) and (220) that are derived from the Si crystal lattice are observed in X-ray diffraction. The Further, in order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. In this specification, for convenience, such a semiconductor film is referred to as a semi-amorphous semiconductor (SAS) film. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a good semi-amorphous semiconductor film can be obtained. Note that a microcrystalline semiconductor film is also included in the semi-amorphous semiconductor film.

The SAS film can be obtained by glow discharge decomposition of a gas containing silicon. A typical gas containing silicon (Si) is SiH ₄ , and Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4, and the} like can be used. Further, by diluting and using a gas containing silicon (silicon) with hydrogen or a gas obtained by adding one or more kinds of rare gas elements selected from helium, argon, krypton, or neon to hydrogen, Formation can be facilitated. It is preferable to dilute the gas containing silicon (silicon) in the range of a dilution rate of 2 to 1000 times. Furthermore, a gas containing silicon (silicon) is mixed with a carbide gas such as CH ₄ or C ₂ H ₆ , a germanium gas such as GeH ₄ or GeF ₄ , F _2, etc. You may adjust to 5-2.4 eV or 0.9-1.1 eV.

  As shown in FIG. 6, in the photoelectric conversion device of the present invention, the end portion 106 of the electrode 102 is located inside the end portion 107 of the color filter 103. The end 107 of the color filter 103 is located inside the end 108 of the photoelectric conversion layer 105. Further, the end portion 107 of the color filter 103 is located inside the end portion 109 of the overcoat layer 104. Further, the end portion 108 of the photoelectric conversion layer 105 is preferably located inside the end portion 109 of the overcoat layer 104.

  It is assumed that the overcoat layer 104 has been removed more than necessary by the overetching during the etching process for forming the photoelectric conversion layer 105 (see FIG. 7). As a result, even if the end portion 109 moves inward, the end portion 109 does not go inward from the end portion 108 of the photoelectric conversion layer 105. Therefore, the end portion 107 of the color filter 103 is still inside the end portion 109 of the overcoat layer 104 that has been over-etched, so that the color filter 103 can be kept covered with the overcoat layer.

  Here, a photoelectric conversion device having a structure in which the electrode 102 is not provided (see FIGS. 8A to 8B and FIGS. 9A to 9B) and the photoelectric conversion device of this embodiment ( FIG. 6) is compared.

  FIG. 8A illustrates a structure in the middle of manufacturing the photoelectric conversion device. In FIG. 8A, an electrode 1002, a color filter 1003 overlapping with part of the electrode 1002, and an overcoat layer 1004 formed so as to cover the color filter 1003 are formed over the insulating surface 1001. A semiconductor film 1005 including a p-type semiconductor film 1005p, an i-type semiconductor film 1005i, and an n-type semiconductor film 1005n is formed over the electrode 1002 and the overcoat layer 1004.

  The semiconductor film 1005 is etched to form a photoelectric conversion layer 1015 including a p-type semiconductor film 1015p, an i-type semiconductor film 1015i, and an n-type semiconductor film 1015n. If the overcoat layer 1004 is over-etched at that time, a part of the surface of the color filter 1003 is exposed as shown in FIG. Further, the end portion of the overcoat layer 1014 is inward by Wo.

  As described above, since the color filter contains a substance that causes metal contamination, the exposure of the surface of the color filter 1003 may adversely affect the characteristics of the photoelectric conversion device.

  In order to avoid this, an example in which a color filter is formed inside a region where an overcoat layer and a photoelectric conversion layer are formed is shown in FIGS. 9A to 9B.

  In FIG. 9A, the electrode 1022, the color filter 1023, and the color filter 1023 are covered over the insulating surface 1021, and the photoelectric conversion layer 1025 is electrically connected by being in partial contact with the overcoat layer 1024 and the electrode 1022. Is formed. The photoelectric conversion layer 1025 includes a p-type semiconductor film 1025p, an i-type semiconductor layer 1025i, and an n-type semiconductor film 1025n.

  FIG. 9B illustrates a structure in which the overcoat layer 1024 of the photoelectric conversion device illustrated in FIG. 9A is over-etched. In the photoelectric conversion device in FIG. 9B, since the end portion of the color filter 1023 is located on the inner side than the end portion of the photoelectric conversion layer 1025, the color filter 1023 can be kept covered with the overcoat layer 1034. it can.

  However, in the structure illustrated in FIGS. 9A and 9B, light may enter the photoelectric conversion layer 1025 from the end portions of the overcoat layers 1024 and 1034 without passing through the color filter 1023. . For this reason, light that does not pass through the color filter 1023 is sensed by the photoelectric conversion layer 1025, which may deteriorate the spectral sensitivity characteristics.

  On the other hand, in the photoelectric conversion device shown in FIG. 6, since the electrode 102 is formed at the end portion of the overcoat layer 104, light from the outside is blocked and the electrode 102 also functions as a light shielding film. That is, light that does not pass through the color filter 103 does not enter the photoelectric conversion layer 105 from the end portion of the overcoat layer 104.

  From the above, the photoelectric conversion device shown in FIG. 6 can prevent the color filter from being exposed even if the overcoat layer is over-etched, and light that does not pass through the color filter is provided with a light-shielding film. It turns out that it can prevent entering into a photoelectric converting layer from the edge part of a coating layer.

  Next, manufacturing of a semiconductor device including the photoelectric conversion device of the present invention is described with reference to FIGS. 1, 2A to 2B, 3A to 3B, and 4A to 4C. 4 (B), FIG. 5 (A) to FIG. 5 (B), FIG. 12, FIG. 18 (A) to FIG.

  In the semiconductor device described in this embodiment, an amplifier circuit including a thin film transistor and a photoelectric conversion device are formed over the same substrate. FIG. 12 is a circuit diagram showing an example of the configuration.

  The semiconductor device 141 includes an amplifier circuit 142 that amplifies the output of the photoelectric conversion device 143. Although various circuit configurations can be applied to the amplifier circuit 142, in this embodiment mode, a thin film transistor 144 and a thin film transistor 145 constitute a current mirror circuit that is the amplifier circuit 142. One of the source terminal or the drain terminal of the thin film transistors 144 and 145 is connected to the external power supply terminal 147 and is kept at a constant voltage, for example, a ground voltage. . The drain terminal of the thin film transistor 145 is connected to the output terminal 146. The photoelectric conversion device 143 is as follows. In the case where a photodiode is used as the photoelectric conversion device 143, the anode (p layer side) is connected to the drain terminal of the thin film transistor 144, and the cathode (n layer side) is connected to the output terminal 146.

  When the photoelectric conversion device 143 is irradiated with light, a photocurrent flows from the cathode (n layer side) to the anode (p layer side). As a result, a current flows through the thin film transistor 144 of the amplifier circuit 142, and a voltage necessary to flow the current is generated at the gate. If the gate length L and channel width W of the thin film transistor 145 are equal to those of the thin film transistor 144, the same current flows in the saturation region because the gate voltages of the thin film transistor 144 and the thin film transistor 145 are equal. If it is desired to amplify the output current, n thin film transistors may be connected in parallel as the thin film transistor 145. In that case, a current amplified in proportion to the number in parallel (n) can be obtained.

  Note that FIG. 12 illustrates the case where an n-channel thin film transistor is used; however, a photoelectric conversion device having a similar function can be formed using a p-channel thin film transistor.

  A manufacturing process of the semiconductor device of this embodiment will be described below.

  First, a base film 202 is formed on a substrate 201, and thin film transistors (TFTs) 211 and 212 are further formed. The substrate 201 may be any material having a light-transmitting property, and for example, a glass substrate or a flexible substrate having a light-transmitting property is used. The thin film transistor 211 includes a source region, a drain region, an active layer having a channel formation region, a gate insulating film, and a source or drain electrode 221. Similarly, the thin film transistor 212 includes a source region, a drain region, an active layer having a channel formation region, a gate insulating film, a source electrode or a drain electrode 222.

  Note that each of the active layers of the thin film transistors 211 and 212 may be provided with a lightly doped drain (LDD) region. An LDD region is a region in which an impurity element is added at a low concentration between a channel formation region and a source region or a drain region formed by adding an impurity element at a high concentration. When the LDD region is provided, This has the effect of relaxing the electric field in the vicinity of the drain region and preventing deterioration due to hot carrier injection. In addition, in order to prevent deterioration of the on-current value due to hot carriers, the thin film transistor 211 has a structure in which an LDD region is overlapped with a gate electrode through a gate insulating film (in this specification, “GOLD (Gate-drain Overlapped LDD)”). It may be referred to as “structure”.

  A sidewall for forming the LDD region may be formed on the side surface of the gate electrode.

  An interlayer insulating film 203 is formed so as to cover the active layers, gate insulating films, and gate electrodes of the thin film transistors 211 and 212. The interlayer insulating film 203 is preferably formed of a silicon nitride film in order to prevent hydrogenation of the active layers of the thin film transistors 211 and 212 and to prevent metal contamination from the color filter as a passivation film. The interlayer insulating film 204 formed over the interlayer insulating film 203 is formed using an inorganic material such as silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen.

  The source or drain electrode 221 of the thin film transistor 211 and the source or drain electrode 222 of the thin film transistor 212 are formed over the interlayer insulating film 204 and are electrically connected to the active layer of the thin film transistor, respectively.

  In addition, the electrode 115, the electrode 101, the electrode 102, the electrode 121, the electrode 122, and the electrode 116 are formed over the interlayer insulating film 204 in the same manufacturing process as the source or drain electrodes 221 and 222.

  In this embodiment mode, the source or drain electrodes 221 and 222, the electrode 101, the electrode 102, the electrode 121, the electrode 122, the electrode 115, and the electrode 116 are formed by the following steps.

  First, a conductive film, which is 400 nm of titanium (Ti) in this embodiment, is formed over the interlayer insulating film 204 by a sputtering method. The conductive film for forming the electrode 101, the electrode 102, the electrode 121, and the electrode 122 may be any conductive material, but it is difficult to react with a photoelectric conversion layer (typically amorphous silicon) to be formed later to form an alloy. It is desirable to use a metal film. In addition to titanium (Ti), molybdenum (Mo), tungsten (W), or the like may be used.

  Next, the conductive film is etched to form the source or drain electrodes 221 and 222, the electrode 101, the electrode 102, the electrode 121, the electrode 122, the electrode 115, and the electrode 116. The electrode 101, the electrode 102, the electrode 121, In particular, with respect to the electrode 122, the conductive film is etched so that each end has a tapered shape.

  At this time, the taper angle of the electrode 101, the electrode 102, the electrode 121, and the electrode 122 is formed to be 80 degrees or less, desirably 45 degrees or less. Accordingly, coverage of a photoelectric conversion layer to be formed later is improved and reliability can be improved (see FIG. 2A). The planar shape of the electrode 101, the electrode 102, the electrode 121, and the electrode 122 is formed so that the apex angle is greater than 90 degrees, and preferably has no corners, in the portion that is in contact with the photoelectric conversion layer to be formed later. To do.

  Next, the color filter 103 is formed between the electrode 101 and the electrode 102 over the interlayer insulating film 204 (see FIG. 2B).

  Further, a color filter 123 is formed between the electrode 121 and the electrode 122 over the interlayer insulating film 204 (see FIG. 3A).

  In order to detect visible light by color separation, the color filter 123 is formed with a red color filter 123R corresponding to red light, a green color filter 123G corresponding to green light, and a blue color filter 123B corresponding to blue light. Has been. However, if a photoelectric conversion device that reads monochromatic light is manufactured, the color filter 123 may be a monochromatic color filter.

  The color filter is produced by applying raw materials, exposing, developing, and baking.

  Next, an overcoat layer 104 that covers the color filter 103 and an overcoat layer 124 that covers the color filter 123 are formed (see FIG. 3B).

  The overcoat layer 104 that covers the color filter 103 and the overcoat layer 124 that covers the color filter 123 may each be formed using a light-transmitting insulating material. For example, an organic resin material such as acrylic or polyimide, or an inorganic material such as silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen can be used. It is also possible to use a laminated film in which these materials are laminated.

  The end portions of the overcoat layer 104 are positioned inside the end portions of the electrode 101 and the electrode 102, respectively, and light from the substrate 201 side does not enter the end portion of the overcoat layer 104. Similarly to the overcoat layer 104, the overcoat layer 124 is shielded by the electrodes 121 and 122 from the light toward the end portions.

  In this embodiment mode, light is shielded by the electrodes 121 and 122; however, light shielding may be performed by the gate electrode of the thin film transistor. In addition, as illustrated in FIG. 19, the light shielding layer 216 may be provided between the thin film transistor and the substrate, and the light shielding layers 217 to 220 may be provided between the substrate and the photoelectric conversion devices 111 and 112. By installing the thin film transistor so as to shield the light, the reliability of the thin film transistor can be improved. Note that the light-blocking layers 216 to 220 can be formed using a material similar to that of the electrodes 101 and 102.

  Next, a photoelectric conversion layer is formed over the overcoat layer 104 and the overcoat layer 124. Here, in order to simplify the description, a manufacturing process of the photoelectric conversion layer 105 over the overcoat layer 104 will be described; however, the photoelectric conversion layer is formed over the overcoat layer 124 in the same manner.

  In addition, as described above, in order to detect visible light by color separation, when forming the color filter 123R, the color filter 123G, and the color filter 123B corresponding to each of RGB, the photoelectric conversion layer also has each It is formed corresponding to the color filter. That is, RGB color filters corresponding to the three photoelectric conversion layers for RGB are formed, and these can be counted as one unit.

  A p-type semiconductor film 105 p is formed on the overcoat layer 104. In this embodiment, for example, a p-type amorphous semiconductor film is formed as the p-type semiconductor film 105p. As the p-type amorphous semiconductor film, an amorphous silicon film containing an impurity element belonging to Group 13 of the periodic table, for example, boron (B) is formed by a plasma CVD method.

  After the p-type semiconductor film 105p is formed, a semiconductor film (hereinafter referred to as an intrinsic semiconductor film or an i-type semiconductor film) 105i and an n-type semiconductor film 105n that do not contain an impurity imparting conductivity are formed in this order. In this embodiment mode, the p-type semiconductor film 105p is formed to a thickness of 10 to 50 nm, the i-type semiconductor film 105i is formed to a thickness of 200 to 1000 nm, and the n-type semiconductor film 105n is formed to a thickness of 20 to 200 nm (see FIG. 1). As described above, the photoelectric conversion devices 111 and 112 are manufactured.

  As the i-type semiconductor film 105i, an amorphous silicon film may be formed by a plasma CVD method, for example. Further, as the n-type semiconductor film 105n, an amorphous silicon film containing an impurity element of 15 group, for example, phosphorus (P) may be formed, or an impurity element of 15 group may be introduced after the amorphous silicon film is formed. Good.

  Note that the p-type semiconductor film 105p, the i-type semiconductor film 105i, and the n-type semiconductor film 105n may be stacked in the reverse order, that is, the n-type semiconductor film, the i-type semiconductor film, and the p-type semiconductor film are stacked in this order. May be.

  Further, as the p-type semiconductor film 105p, the i-type semiconductor film 105i, and the n-type semiconductor film 105n, not only an amorphous semiconductor film but also a semi-amorphous semiconductor film may be used.

  One end of the p-type semiconductor film 105 p, the i-type semiconductor film 105 i, and the n-type semiconductor film 105 n, particularly the lowermost p-type semiconductor film 105 p, is electrically connected to the electrode 101. On the other hand, the other end of the p-type semiconductor film 105 p is on the overcoat layer 124 and is insulated from the electrode 102. Since the light shielded by the electrode 102 passes through the color filter 123, the electrode 102 also has a function as a light shielding film for suppressing the light from reaching the photoelectric conversion layer 105.

  2A, 2B, 3B, and 1, the cross-sectional views of the photoelectric conversion device of this embodiment are described; however, FIGS. 18A to 18D are used. Then, the example of the top view corresponding to each is shown.

  18A to 18D, cross-sectional views taken along line A-A ′ are FIGS. 2A, 2 B, 3 B, and 1. In FIG. 2A, the electrode 101 and the electrode 102 serving as a light shielding layer are shown as if they are separated, but may be formed of a continuous conductive layer as shown in FIG. .

  In FIG. 18D, the photoelectric conversion layer 105 shows only the uppermost n-type semiconductor film 105n, but the i-type semiconductor film 105i and the p-type semiconductor film 105p are formed under the n-type semiconductor film 105n. ing.

  Next, an insulating film 151 is formed by a screen printing method or an ink jet method so as to cover the entire surface. In this embodiment mode, an epoxy resin is used as the insulating film 151; however, another photosensitive resin may be used (see FIG. 4A).

  Next, an electrode 153 that is electrically connected to the electrode 115 is formed over the insulating film 151. Similarly, the insulating film 151 is in contact with the uppermost layer of the photoelectric conversion layer 105 (here, the n-type semiconductor film 105n) of the photoelectric conversion device 111, is in contact with the uppermost layer of the photoelectric conversion layer of the photoelectric conversion device 112, and is electrically connected to the electrode 116. The electrode 155 to be connected is formed (see FIG. 4B).

  The electrodes 153 and 155 are formed by sputtering titanium (Ti) and photolithography. The electrodes 153 and 155 may be formed by a screen printing method. In the case of screen printing, the electrode 153 and the electrode 155 are each formed of a single layer of titanium (Ti) or nickel (Ni) and copper (in order to improve wettability with solder provided in a later step and strength during mounting. Cu).

  Next, an insulating film 161 is formed as a sealing resin on the insulating film 151, the electrode 153, and the electrode 155 by screen printing or the like. The insulating film 161 may be formed using a material similar to that of the insulating film 151. Note that the insulating film 161 is not formed over part of the electrode 153 and part of the electrode 155, and an exposed region is formed in each of the electrode 153 and the electrode 155 (see FIG. 5A).

  Next, an electrode 165 electrically connected to the electrode 153 and an electrode 166 electrically connected to the electrode 155 are formed over the insulating film 161. The electrodes 165 and 166 are solder electrodes and function as output electrodes to the outside.

  As described above, the photoelectric conversion device of the present invention is described with reference to FIGS. 6 and 7, and the present invention is further described with reference to FIGS. 8A to 8B and FIGS. 9A to 9B. The advantages of this photoelectric conversion device have been described. Further, FIG. 1, FIG. 2 (A) to FIG. 2 (B), FIG. 3 (A) to FIG. 3 (B), FIG. 4 (A) to FIG. 4 (B), FIG. The manufacturing process of the semiconductor device having the photoelectric conversion device of the present invention was described.

  Furthermore, in this embodiment mode, light is shielded by the electrode 102 and the electrode 122, but light shielding may be performed by the gate electrode of the thin film transistor. As shown in FIG. 19, a light shielding layer 216 may be provided between the thin film transistor and the substrate. However, by installing the light shielding layer so as to shield the end of the photoelectric conversion layer, the thin film transistor can be shielded. Reliability can also be improved. Further, between the substrate and the photoelectric conversion device 111, light shielding layers 217, 218, 219, and 220 that shield the end portions of the photoelectric conversion devices 111 and 112 may be formed in the same layer as the light shielding layer 216. Note that the light-blocking layers 216 to 220 can be formed using a material similar to that of the electrodes 101 and 102.

  Note that this embodiment can be combined with any of the other embodiments and examples if necessary.

[Embodiment 2]
In this embodiment, an example of a semiconductor device having a structure different from that in Embodiment 1 is described. However, the same reference numerals are used for the same components as those in the first embodiment, and the first embodiment is used for the description of the components not particularly mentioned.

  FIG. 10 is a cross-sectional view of a semiconductor device including the photoelectric conversion device of this embodiment. 10 differs from FIG. 1 in that the electrodes 102 and 122 formed on the interlayer insulating film 204 in FIG. 1 are not formed. Instead of the electrode 102 and the electrode 122, an electrode 113 functioning as a light shielding film and an electrode 114 functioning as a light shielding film, which are formed using the same material and the same process as the thin film transistors 211 and 212, are formed over the base film 202. The The electrodes 113 and 114 functioning as light shielding films are covered with an interlayer insulating film 213 and an interlayer insulating film 204.

  The electrode 113 functioning as a light-shielding film can block light that enters the photoelectric conversion layer 105 from the end portion of the overcoat layer 104 without passing through the color filter 103 in the photoelectric conversion device 111. The electrode 114 functioning as a light-shielding film performs the same function on the photoelectric conversion device 112.

  The photoelectric conversion device of this embodiment can also prevent stray light from entering the photoelectric conversion layer 105 from the end portion of the overcoat layer 104 without passing through the color filter 103.

  In FIG. 10, only two color filters and photoelectric conversion devices are shown. However, when visible light is color-separated and detected, it is necessary to provide two color filters and photoelectric conversion devices for RGB. In FIG. 10, the color filters provided in the photoelectric conversion devices 111 and 112 are different color filters. However, when reading a monochromatic image, the color filter may be monochromatic.

  In this embodiment mode, light is shielded by the electrode 113 and the electrode 114, but may be shielded by the gate electrode of the thin film transistor. As shown in FIG. 20, a light shielding layer 216 may be provided between the thin film transistor and the substrate. However, by installing the light shielding layer at the same time as shielding the edge of the photoelectric conversion layer, Reliability can also be improved. Note that the light-blocking layer 216 can be formed using a material similar to that of the electrodes 101 and 102.

  Note that this embodiment can be combined with any of the other embodiments and examples if necessary.

[Embodiment 3]
In this embodiment, a structure in which a color filter 133 is provided between the base film 202 and the interlayer insulating film 204 in addition to the structure shown in FIG. 10 will be described with reference to FIGS.

  In FIG. 11, a color filter 133, a light shielding layer electrode 113, and an overcoat layer 135 are formed on a base film 202 in a semiconductor device that detects visible light by color separation. An interlayer insulating film 213 covering the active layer, gate electrode, and gate insulating film of the thin film transistors 211 and 212 covers the overcoat layer 135 and the electrode 113. Similarly, the interlayer insulating film 213 is provided below the photoelectric conversion device 112 and covers the color filter 134, the electrode 114 that also functions as a light shielding film, and the overcoat layer 136 provided on the base film 202. An interlayer insulating film 204 is formed over the interlayer insulating film 213, and a source electrode or a drain electrode 221 of the thin film transistor 211 is formed over the interlayer insulating film 204 through a contact hole formed in the interlayer insulating film 204. The thin film transistors 211 and 212 are connected to the active layers.

  In the photoelectric conversion device 111, one end portion of the photoelectric conversion layer 125 including the p-type semiconductor film 125p, the i-type semiconductor film 125i, and the n-type semiconductor film 125n is in contact with and electrically connected to the electrode 101. On the other hand, the other end portion of the photoelectric conversion layer 125 is prevented from entering stray light to the end portion of the photoelectric conversion layer 125 by the electrode 113 formed using the same material and manufacturing process as the gate electrode of the thin film transistor. it can. Note that the electrode 114 for the photoelectric conversion device 112 has a similar function.

  The photoelectric conversion devices 111 and 112 are separated from the color filter 133 by the interlayer insulating film 204. As described above, the interlayer insulating film 204 is formed using an inorganic material such as silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen.

  Although only two color filters and photoelectric conversion devices are shown in FIG. 11, three color filters and photoelectric conversion devices must be provided for RGB when visible light is color-separated and detected. In FIG. 11, color filters 133 and 134 are color filters of different colors. However, when reading monochromatic light, the configuration shown in FIG. 21 may be used. The color filter 133 in FIG. 11 is a single color filter.

  In this embodiment, examples in which the photoelectric conversion device of the present invention is applied to various electronic devices are shown. Specific examples include a computer, a display, a mobile phone, and a television. These will be described with reference to FIGS. 13, 14 (A) to 14 (B), FIGS. 15 (A) to 15 (B), FIGS. 16 and 17.

  FIG. 13 shows a cellular phone, which includes a main body (A) 701, a main body (B) 702, a housing 703, operation keys 704, an audio output unit 705, an audio input unit 706, a circuit board 707, a display panel (A) 708, a display A panel (B) 709, a hinge 710, and a light-transmitting material portion 711 are provided, and a semiconductor device 712 including a photoelectric conversion device is provided inside the housing 703.

  The semiconductor device 712 detects light transmitted through the light-transmitting material portion 711 and controls the luminance of the display panel (A) 708 and the display panel (B) 709 in accordance with the detected illuminance of the external light, or the semiconductor device 712. The illumination control of the operation key 704 is performed in accordance with the illuminance obtained in the above. Thereby, current consumption of the mobile phone can be suppressed. By having the semiconductor device 712, the characteristics of the mobile phone can be improved.

  14A and 14B illustrate another example of a mobile phone. 14A and 14B, a main body 721 includes a housing 722, a display panel 723, operation keys 724, an audio output portion 725, an audio input portion 726, and semiconductor devices 727 and 728 including a photoelectric conversion device. Contains.

  In the mobile phone illustrated in FIG. 14A, the luminance of the display panel 723 and the operation key 724 can be controlled by detecting external light by the semiconductor device 727 including the photoelectric conversion device provided in the main body 721. is there.

  14B, a semiconductor device 728 including a photoelectric conversion device is provided inside the main body 721 in addition to the structure in FIG. With the semiconductor device 728 including a photoelectric conversion device, the luminance of a backlight provided in the display panel 723 can be detected.

  In FIG. 13 and FIG. 14, since the photoelectric conversion device provided with a circuit that amplifies the photocurrent and extracts it as a voltage output is used in the cellular phone, the number of components mounted on the circuit board can be reduced, and the cellular phone can be reduced. The size of the main body can be reduced.

  FIG. 15A illustrates a computer, which includes a main body 731, a housing 732, a display portion 733, a keyboard 734, an external connection port 735, a pointing mouse 736, and the like.

  FIG. 15B shows a display device such as a television receiver. This display device includes a housing 741, a support base 742, a display portion 743, and the like.

  FIG. 16 shows a detailed structure in the case where a liquid crystal panel is used as the display portion 733 provided in the computer of FIG. 15A and the display portion 743 of the display device shown in FIG.

  A liquid crystal panel 762 illustrated in FIG. 16 is incorporated in a housing 761, and includes substrates 751a and 751b, a liquid crystal layer 752 sandwiched between the substrates 751a and 751b, polarization filters 755a and 755b, a backlight 753, and the like. Yes. In the housing 761, a semiconductor device 754 including a photoelectric conversion device is formed.

  A semiconductor device 754 having a photoelectric conversion device manufactured by using the present invention senses the amount of light from the RGB LED backlight 753 for each of RGB, and the information is fed back to adjust the luminance of the liquid crystal panel 762. The Specifically, since the temperature dependency of each LED of RGB is different, the amount of light of the RGBLED backlight is detected and the variation of the LED is corrected. Further, the white balance is adjusted by correcting the deterioration of the LED.

  17A and 17B illustrate an example in which the photoelectric conversion device of the present invention or the semiconductor device including the photoelectric conversion device is incorporated into a camera, for example, a digital camera. FIG. 17A is a perspective view seen from the front side of the digital camera, and FIG. 17B is a perspective view seen from the rear side. 17A, the digital camera includes a release button 801, a main switch 802, a finder window 803, a flash 804, a lens 805, a lens barrel 806, and a housing 807.

  In FIG. 17B, a finder eyepiece window 811, a monitor 812, and operation buttons 813 are provided. When the release button 801 is pressed down to a half position, the focus adjustment mechanism and the exposure adjustment mechanism are operated, and when the release button 801 is pressed down to the lowest position, the shutter is opened. A main switch 802 switches the power of the digital camera on and off when pressed or rotated.

  The viewfinder window 803 is an apparatus for confirming a shooting range and a focus position from the viewfinder eyepiece window 811 shown in FIG. The flash 804 is arranged at the upper front of the digital camera. When the subject brightness is low, the release button 801 is pressed to open the shutter and simultaneously emit auxiliary light. The lens 805 is disposed in front of the digital camera. The lens 805 includes a focusing lens, a zoom lens, and the like, and constitutes a photographing optical system together with a shutter and a diaphragm (not shown). In addition, an imaging element such as a CCD (Charge Coupled Device) is provided behind the lens.

  The lens barrel 806 moves the lens position in order to focus the focusing lens, the zoom lens, and the like, and moves the lens 805 forward by extending the lens barrel 806 during photographing. Further, when carrying the camera, the lens 805 is moved down to be compact. In this embodiment, the structure is such that the subject can be zoomed by extending the lens barrel 806. However, the structure is not limited to this structure, and the structure of the imaging optical system in the housing 807 is not limited. It may be a digital camera capable of zoom shooting without extending the barrel 806.

  The viewfinder eyepiece window 811 is provided on the upper rear surface of the digital camera, and is a window provided for eye contact when confirming the photographing range and the focus position. The operation buttons 813 are various function buttons provided on the rear surface of the digital camera, and include a setup button, a menu button, a display button, a function button, a selection button, and the like.

  When the photoelectric conversion device of the present invention is incorporated in the camera shown in FIGS. 17A and 17B, the photoelectric conversion device can sense the presence and intensity of light, thereby adjusting the exposure of the camera. It can be carried out. The photoelectric conversion device of the present invention can be applied to other electronic devices such as a projection television and a navigation system.

  The photoelectric conversion device of the present invention is not limited to the above, and can be used for a device that needs to detect light, for example, a facsimile machine or a vending machine.

  Note that this embodiment can be combined with the embodiment and the embodiment if necessary.

  The present invention can provide a photoelectric conversion device with small variations and improved characteristics, and a semiconductor device including the photoelectric conversion device.

4A and 4B illustrate a manufacturing process of a semiconductor device including a photoelectric conversion device of the present invention. 4A and 4B illustrate a manufacturing process of a semiconductor device including a photoelectric conversion device of the present invention. 4A and 4B illustrate a manufacturing process of a semiconductor device including a photoelectric conversion device of the present invention. 4A and 4B illustrate a manufacturing process of a semiconductor device including a photoelectric conversion device of the present invention. 4A and 4B illustrate a manufacturing process of a semiconductor device including a photoelectric conversion device of the present invention. Sectional drawing of the photoelectric conversion apparatus of this invention. Sectional drawing of the photoelectric conversion apparatus of this invention. The comparison figure with the photoelectric conversion apparatus of this invention. The comparison figure with the photoelectric conversion apparatus of this invention. 1 is a cross-sectional view of a semiconductor device having a photoelectric conversion device of the present invention. 1 is a cross-sectional view of a semiconductor device having a photoelectric conversion device of the present invention. 1 is a circuit diagram of a semiconductor device having a photoelectric conversion device of the present invention. The figure which shows the example of the electric equipment incorporating the photoelectric conversion apparatus of this invention. The figure which shows the example of the electric equipment incorporating the photoelectric conversion apparatus of this invention. The figure which shows the example of the electric equipment incorporating the photoelectric conversion apparatus of this invention. The figure which shows the example of the electric equipment incorporating the photoelectric conversion apparatus of this invention. The figure which shows the example of the electric equipment incorporating the photoelectric conversion apparatus of this invention. FIG. 6 is a top view illustrating a manufacturing process of a photoelectric conversion device of the present invention. 1 is a cross-sectional view of a semiconductor device having a photoelectric conversion device of the present invention. 1 is a cross-sectional view of a semiconductor device having a photoelectric conversion device of the present invention. 1 is a cross-sectional view of a semiconductor device having a photoelectric conversion device of the present invention.

Explanation of symbols

100 Insulating surface 101 Electrode 102 Electrode 103 Color filter 104 Overcoat layer 105 Photoelectric conversion layer 105p p-type semiconductor film 105i i-type semiconductor film 105n n-type semiconductor film 106 end 107 end 108 end 109 end 111 photoelectric conversion device 112 Photoelectric conversion device 113 Electrode 114 Electrode 115 Electrode 116 Electrode 121 Electrode 122 Electrode 123 Color filter 123 R Color filter 123 G Color filter 123 B Color filter 124 Overcoat layer 125 Photoelectric conversion layer 125 p p-type semiconductor film 125 i i-type semiconductor film 125 n n-type semiconductor film 133 Color filter 134 Color filter 135 Overcoat layer 136 Overcoat layer 141 Semiconductor device 142 Amplifier circuit 143 Photoelectric conversion device 144 Thin film transistor 145 Thin film transistor Dister 146 Terminal 147 Terminal 151 Insulating film 153 Electrode 155 Electrode 161 Insulating film 165 Electrode 166 Electrode 201 Substrate 202 Base film 203 Interlayer insulating film 204 Interlayer insulating film 211 Thin film transistor 212 Thin film transistor 213 Interlayer insulating film 221 Source electrode or drain electrode 222 Source electrode or Drain electrode 701 body (A)
702 Body (B)
703 Housing 704 Operation key 705 Audio output unit 706 Audio input unit 707 Circuit board 708 Display panel (A)
709 Display panel (B)
710 Hinge 711 Translucent material portion 712 Semiconductor device 721 Main body 722 Housing 723 Display panel 724 Operation key 725 Audio output portion 726 Audio input portion 727 Semiconductor device 728 Semiconductor device 731 Main body 732 Housing 733 Display portion 734 Keyboard 735 External connection port 736 Pointing mouse 741 Case 742 Support base 743 Display unit 761 Case 751a Substrate 751b Substrate 752 Liquid crystal layer 755a Polarization filter 755b Polarization filter 753 Backlight 754 Semiconductor device 762 Liquid crystal panel 801 Release button 802 Main switch 803 Finder window 804 Flash 805 Lens 806 Lens barrel 807 Case 811 Viewfinder eyepiece window 812 Monitor 813 Operation button 1001 Insulating surface 1002 Electrode 1003 Color filter 1004 E -Bar coat layer 1005 semiconductor film 1005p p-type semiconductor film 1005i i-type semiconductor film 1005n n-type semiconductor film 1014 overcoat layer 1015 photoelectric conversion layer 1015p p-type semiconductor film 1015i i-type semiconductor film 1015n n-type semiconductor film 1021 insulating surface 1022 electrode 1023 color Filter 1024 Overcoat layer 1025 Photoelectric conversion layer 1025p p-type semiconductor film 1025i i-type semiconductor layer 1025n n-type semiconductor film 1034 overcoat layer

Claims (16)

A first electrode and a second electrode formed on an insulating surface;
A color filter between the first electrode and the second electrode;
An overcoat layer covering the color filter;
Photoelectric conversion including a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to that of the first semiconductor film on the overcoat layer. And having a layer
One end of the photoelectric conversion layer is in contact with the first electrode,
The first electrode overlaps at least one end of the photoelectric conversion layer, one end of the color filter, and one end of the overcoat layer,
The second electrode overlaps at least the other end of the photoelectric conversion layer, the other end of the color filter, and the other end of the overcoat layer,
2. The semiconductor device according to claim 1, wherein the other end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. In claim 1,
The first semiconductor film is provided in contact with the overcoat layer;
The second semiconductor film is provided in contact with the first semiconductor film;
The third semiconductor film is provided in contact with the second semiconductor film;
The semiconductor device, wherein the first electrode and the first semiconductor film are in electrical contact with each other. In claim 1 or 2,
The insulating surface is a substrate surface,
The semiconductor device is a light-transmitting glass substrate or a flexible substrate. In claim 1 or 2,
The insulating surface is the surface of an insulating film provided on the substrate,
The semiconductor device is characterized in that the insulating film is any one of a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, and a silicon nitride film containing oxygen. A light shielding layer formed on the substrate;
An insulating film formed on the light shielding layer;
An electrode formed on the insulating film;
A color filter formed on the insulating film and partially in contact with the electrode;
An overcoat layer covering the color filter;
A photoelectric conversion layer having a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to that of the first semiconductor film on the overcoat layer. And
One end of the photoelectric conversion layer is in contact with the electrode,
The electrode overlaps at least one end of the photoelectric conversion layer, one end of the color filter, and one end of the overcoat layer,
The light shielding layer overlaps at least the other end of the photoelectric conversion layer, the other end of the color filter, and the other end of the overcoat layer,
2. The semiconductor device according to claim 1, wherein the other end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. First and second light shielding layers formed on a substrate;
An insulating film formed on the first and second light shielding layers;
A thin film transistor on the insulating film;
An interlayer insulating film covering the thin film transistor;
An electrode formed on the interlayer insulating film;
A color filter formed on the interlayer insulating film and partially in contact with the electrode;
An overcoat layer covering the color filter;
A photoelectric conversion layer having a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to that of the first semiconductor film on the overcoat layer. And
One end of the photoelectric conversion layer is in contact with the electrode,
The electrode overlaps at least one end of the photoelectric conversion layer, one end of the color filter, and one end of the overcoat layer,
The first light shielding layer overlaps at least the thin film transistor;
It said second light-shielding layer, at least the other end portion of the front Symbol photoelectric conversion layer, the other end portion of the color filter, and overlaps the other end portion of the overcoat layer,
2. The semiconductor device according to claim 1, wherein the other end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. In claim 6,
The semiconductor device according to claim 1, wherein the first light shielding layer overlaps at least a channel portion of the thin film transistor. In any one of Claims 5 thru | or 7 ,
The first semiconductor film is provided in contact with the overcoat layer;
The second semiconductor film is provided in contact with the first semiconductor film;
The third semiconductor film is provided in contact with the second semiconductor film;
The semiconductor device, wherein the electrode and the first semiconductor film are in electrical contact. First and second light shielding layers formed on a substrate, a color filter in contact with the first and second light shielding layers, and a thin film transistor;
An overcoat layer covering the color filter;
An interlayer insulation film covering the first and second light shielding layers, the color filter, and the thin film transistor;
An electrode formed on the interlayer insulating film;
A photoelectric conversion layer formed on the interlayer insulating film and partially in contact with the electrode;
The photoelectric conversion layer includes a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having a conductivity type opposite to the first semiconductor film,
One end of the photoelectric conversion layer is in contact with the electrode,
The electrode overlaps at least one end of the photoelectric conversion layer;
It said first light-shielding layer, at least overlaps with one end portion of the one end portion and said overcoat layer of the color filter,
The second light shielding layer overlaps at least the other end of the photoelectric conversion layer, the other end of the color filter, and the other end of the overcoat layer ,
2. The semiconductor device according to claim 1, wherein the other end portion of the color filter is located inside the other end portion of the photoelectric conversion layer. In claim 9,
The first semiconductor film is provided in contact with the interlayer insulating film;
The second semiconductor film is provided in contact with the first semiconductor film;
The semiconductor device, wherein the third semiconductor film is provided in contact with the second semiconductor film. In any one of Claims 5 thru | or 10 ,
The semiconductor device is a light-transmitting glass substrate or a flexible substrate. In any one of Claims 1 thru | or 11 ,
One end portion and the other end portion of the photoelectric conversion layer are outside the one end portion and the other end portion of the color filter. In any one of Claims 1 thru | or 12,
The overcoat layer is a layer containing an organic resin insulating material, a layer including an inorganic insulating material, or, wherein a is a layer containing an organic insulating material and an inorganic insulating material. In claim 13,
2. The semiconductor device according to claim 1, wherein the organic resin insulating material is acrylic or polyimide. In claim 13,
The semiconductor device is characterized in that the inorganic insulating material is any one of silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen. In any one of Claims 1 thru | or 15,
Said first semiconductor layer, said second semiconductor layer, and wherein each of the third semiconductor film, an amorphous semiconductor film or a semiconductor device which is a semi-amorphous semiconductor film.

Images