JP5132169B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP5132169B2 JP5132169B2 JP2007074389A JP2007074389A JP5132169B2 JP 5132169 B2 JP5132169 B2 JP 5132169B2 JP 2007074389 A JP2007074389 A JP 2007074389A JP 2007074389 A JP2007074389 A JP 2007074389A JP 5132169 B2 JP5132169 B2 JP 5132169B2
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- film
- region
- island
- semiconductor film
- shaped semiconductor
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- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007074389A JP5132169B2 (ja) | 2006-03-31 | 2007-03-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006100263 | 2006-03-31 | ||
JP2006100263 | 2006-03-31 | ||
JP2007074389A JP5132169B2 (ja) | 2006-03-31 | 2007-03-22 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007294913A JP2007294913A (ja) | 2007-11-08 |
JP2007294913A5 JP2007294913A5 (enrdf_load_stackoverflow) | 2010-03-25 |
JP5132169B2 true JP5132169B2 (ja) | 2013-01-30 |
Family
ID=38765166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007074389A Expired - Fee Related JP5132169B2 (ja) | 2006-03-31 | 2007-03-22 | 半導体装置の作製方法 |
Country Status (1)
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JP (1) | JP5132169B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2009212504A (ja) * | 2008-02-08 | 2009-09-17 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置およびその製造方法 |
US7982272B2 (en) * | 2008-03-26 | 2011-07-19 | Advanced Lcd Technologies Development Center Co., Ltd. | Thin-film semiconductor device and method for manufacturing the same |
US20110024764A1 (en) * | 2008-03-31 | 2011-02-03 | Tomohiro Kimura | Semiconductor device, method for producing the same, and display device |
WO2012090799A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2014130922A (ja) | 2012-12-28 | 2014-07-10 | Toshiba Corp | 半導体装置及びその製造方法 |
US9324820B1 (en) * | 2014-10-28 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming semiconductor structure with metallic layer over source/drain structure |
US11817485B2 (en) | 2020-06-23 | 2023-11-14 | Taiwan Semiconductor Manufacturing Company Limited | Self-aligned active regions and passivation layer and methods of making the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195789A (ja) * | 1997-10-27 | 1999-07-21 | Sony Corp | 半導体装置およびその製造方法 |
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2007
- 2007-03-22 JP JP2007074389A patent/JP5132169B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2007294913A (ja) | 2007-11-08 |
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