JP5132169B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5132169B2
JP5132169B2 JP2007074389A JP2007074389A JP5132169B2 JP 5132169 B2 JP5132169 B2 JP 5132169B2 JP 2007074389 A JP2007074389 A JP 2007074389A JP 2007074389 A JP2007074389 A JP 2007074389A JP 5132169 B2 JP5132169 B2 JP 5132169B2
Authority
JP
Japan
Prior art keywords
film
region
island
semiconductor film
shaped semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007074389A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007294913A (ja
JP2007294913A5 (enrdf_load_stackoverflow
Inventor
穂高 丸山
健吾 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007074389A priority Critical patent/JP5132169B2/ja
Publication of JP2007294913A publication Critical patent/JP2007294913A/ja
Publication of JP2007294913A5 publication Critical patent/JP2007294913A5/ja
Application granted granted Critical
Publication of JP5132169B2 publication Critical patent/JP5132169B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2007074389A 2006-03-31 2007-03-22 半導体装置の作製方法 Expired - Fee Related JP5132169B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007074389A JP5132169B2 (ja) 2006-03-31 2007-03-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006100263 2006-03-31
JP2006100263 2006-03-31
JP2007074389A JP5132169B2 (ja) 2006-03-31 2007-03-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007294913A JP2007294913A (ja) 2007-11-08
JP2007294913A5 JP2007294913A5 (enrdf_load_stackoverflow) 2010-03-25
JP5132169B2 true JP5132169B2 (ja) 2013-01-30

Family

ID=38765166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007074389A Expired - Fee Related JP5132169B2 (ja) 2006-03-31 2007-03-22 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5132169B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009212504A (ja) * 2008-02-08 2009-09-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置およびその製造方法
US7982272B2 (en) * 2008-03-26 2011-07-19 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film semiconductor device and method for manufacturing the same
US20110024764A1 (en) * 2008-03-31 2011-02-03 Tomohiro Kimura Semiconductor device, method for producing the same, and display device
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014130922A (ja) 2012-12-28 2014-07-10 Toshiba Corp 半導体装置及びその製造方法
US9324820B1 (en) * 2014-10-28 2016-04-26 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor structure with metallic layer over source/drain structure
US11817485B2 (en) 2020-06-23 2023-11-14 Taiwan Semiconductor Manufacturing Company Limited Self-aligned active regions and passivation layer and methods of making the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195789A (ja) * 1997-10-27 1999-07-21 Sony Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2007294913A (ja) 2007-11-08

Similar Documents

Publication Publication Date Title
US7696024B2 (en) Semiconductor device and manufacturing method thereof
JP5132169B2 (ja) 半導体装置の作製方法
JP6253617B2 (ja) 発光装置および電子機器
US7704765B2 (en) Method for manufacturing semiconductor device
US7883989B2 (en) Method for manufacturing semiconductor device
JP4809600B2 (ja) 半導体装置の作製方法
JP4472314B2 (ja) 半導体装置の作製方法、表示装置の作製方法、および発光装置の作製方法
JP4267394B2 (ja) 剥離方法、及び半導体装置の作製方法
JP2005033219A (ja) 半導体装置の作製方法
JP2005311342A (ja) 半導体装置の作製方法
JP2005079209A (ja) 結晶性半導体膜の作製方法、該結晶性半導体膜を有する薄膜トランジスタの作製方法、該結晶性半導体膜を有する半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100106

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100203

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120817

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120821

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121030

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121106

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151116

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees