JP5132014B2 - 電磁放射ソースを提供するレーザ構造体を含む物品 - Google Patents

電磁放射ソースを提供するレーザ構造体を含む物品 Download PDF

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JP5132014B2
JP5132014B2 JP2000258446A JP2000258446A JP5132014B2 JP 5132014 B2 JP5132014 B2 JP 5132014B2 JP 2000258446 A JP2000258446 A JP 2000258446A JP 2000258446 A JP2000258446 A JP 2000258446A JP 5132014 B2 JP5132014 B2 JP 5132014B2
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region
light emitting
substrate
laser
radiation
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JP2001111146A5 (enExample
JP2001111146A (ja
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メキス アチラ
ドダバラパー アナス
エー．ロジャース ジョン
エリオット スルシャー リチャード
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アルカテル−ルーセント ユーエスエー インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/17—Solid materials amorphous, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/17—Solid materials amorphous, e.g. glass
    • H01S3/178—Solid materials amorphous, e.g. glass plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
JP2000258446A 1999-08-30 2000-08-29 電磁放射ソースを提供するレーザ構造体を含む物品 Expired - Fee Related JP5132014B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/385167 1999-08-30
US09/385,167 US6363096B1 (en) 1999-08-30 1999-08-30 Article comprising a plastic laser

Publications (3)

Publication Number Publication Date
JP2001111146A JP2001111146A (ja) 2001-04-20
JP2001111146A5 JP2001111146A5 (enExample) 2007-09-27
JP5132014B2 true JP5132014B2 (ja) 2013-01-30

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JP2000258446A Expired - Fee Related JP5132014B2 (ja) 1999-08-30 2000-08-29 電磁放射ソースを提供するレーザ構造体を含む物品

Country Status (2)

Country Link
US (2) US6363096B1 (enExample)
JP (1) JP5132014B2 (enExample)

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US10895684B2 (en) * 2019-06-21 2021-01-19 Seagate Technology Llc Integrated laser transceiver
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TWI850279B (zh) * 2019-11-13 2024-08-01 光環科技股份有限公司 具混合光柵結構的面射型雷射元件與製法
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US6975664B1 (en) 2005-12-13
US6363096B1 (en) 2002-03-26
JP2001111146A (ja) 2001-04-20

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